882 results about "Tellurium" patented technology

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

The invention discloses a terahertz modulator based on an aluminum and germanium-antimony-tellurium composite dumbbell hole array. The terahertz modulator comprises a substrate and the aluminum and germanium-antimony-tellurium composite dumbbell hole array formed on the surface of the substrate. The aluminum and germanium-antimony-tellurium composite dumbbell hole array is characterized in that a plurality of periodically arranged dumbbell holes are etched in an aluminum thin film, and a layer of germanium-antimony-tellurium thin film covers the aluminum dumbbell hole array; a structural unit of the aluminum dumbbell hole array is composed of two round holes with the same radius and a rectangular hole, the rectangular hole is connected with the two round holes, and the depth of the round holes, the depth of the rectangular hole and the thickness of the aluminum film are the same. The terahertz modulator can dynamically adjust the transmissivity of terahertz waves through germanium-antimony-tellurium phase change. According to the aluminum and germanium-antimony-tellurium composite dumbbell hole array disclosed by the invention, a modulator can be realized in a terahertz frequency band, and dynamic adjustment on the terahertz wave transmissivity is realized by utilizing the phase change characteristic of germanium-antimony-tellurium.

The invention discloses a sulfur-doped molybdenum ditelluride nanosheet as well as a preparation method and application thereof, and belongs to the technical field of nano materials and components. The preparation method comprises the steps that a catalyst and a molybdenum source are mixed and placed in an ark, then a substrate is placed above the ark, and a pretreated molybdenum source is obtained; a tellurium source is also placed in the ark, then the tellurium source and the pretreated molybdenum source are placed in the double-temperature-zone tubular furnace, the tellurium source is placed on the upstream, the pretreated molybdenum source is placed on the downstream, a growth reaction is carried out, heat preservation is carried out, and molybdenum ditelluride nanosheets are obtained; and soaking the molybdenum ditelluride nanosheet in an ammonium sulfide solution, taking out the molybdenum ditelluride nanosheet, washing with water, and drying to obtain the molybdenum ditelluride nanosheet. The invention also discloses the sulfur-doped molybdenum ditelluride nanosheet and an application of the sulfur-doped molybdenum ditelluride nanosheet in preparation of a memristor device. The molybdenum ditelluride nanosheet generated by ammonium sulfide etching chemical vapor deposition realizes simple sulfur doping treatment of molybdenum ditelluride, the sulfur-doped modified molybdenum ditelluride can be used for preparing memristor devices, a foundation is laid for subsequent neuromorphic application, and the application prospect is good.

The invention provides a preparation method of a MoTe2 single crystal. The preparation method comprises the following steps: A, weighing molybdenum powder, tellurium powder and cobalt powder according to a stoichiometric ratio; b, the powder weighed in the step A is poured into a glass beaker, convective mixing is achieved under the action of a stirrer, and the duration time is 20-30 minutes; c, pouring the powder ground in the step B into a crucible, and sealing; d, putting the crucible in the step C into a glass tube; e, covering the glass tube in the step D with a glass cap; f, vacuumizing the glass tube by using a vacuum pump set, then filling argon, repeating the gas washing process for three times, and then vacuumizing again; g, aligning the middle position of the glass cap, heating to melt the tube wall of the glass tube and the glass cap together, and completing vacuum sealing; and H, putting the glass tube in the step G into a box-type furnace, sintering, taking out, putting into a water bucket, and quenching to obtain a single crystal sample.

The invention discloses a method for controlling the surface shape of a cadmium zinc telluride wafer. The method comprises the following steps: firstly, determining the universal change condition of the thickness and the surface shape of a damaged layer of the cadmium zinc telluride wafer along with a grinding and polishing process under an actual process condition; in combination with an analysis result, before each time of surface treatment of the tellurium-zinc-cadmium wafer, removing damaged layers on the two surfaces of the tellurium-zinc-cadmium wafer through a chemical corrosion method; and meanwhile, the surface shape of the wafer is measured before chemical polishing, and chemical polishing is carried out by adopting different process parameters according to the surface shape condition. A chemical corrosion solution in the process of removing the stress of the damaged layer through chemical corrosion is a corrosion solution with a specific concentration, and the chemical corrosion time is determined by the required removal thickness. A chemical polishing solution in the chemical polishing process is an etchant solution with a specific concentration, the chemical polishing time is determined by a surface shape value of a wafer measured before chemical polishing, and a chemical polishing carrier is a specially designed carrier. The method is simple in process, good in repeatability and controllable in process, can be used for surface shape control of the cadmium zinc telluride substrate, and has batch capacity.

The invention provides an epitaxial wafer of a high-luminous-efficiency infrared light-emitting diode and a manufacturing method of the epitaxial wafer. The epitaxial wafer comprises a GaAs substrate, an N-type semiconductor structure, a quantum well active region and a P-type semiconductor structure, wherein the N-type semiconductor structure, the quantum well active region and the P-type semiconductor structure are formed on the substrate. The N-type semiconductor structure comprises an N-type AlGaAs stacking layer, diethyl tellurium (DETe) and disilane (Si2H6) are adopted for co-doping, the N-type semiconductor structure is designed to be of a superlattice structure, and the doping concentration in the vertical direction is periodically alternated from high to low; and a doping concentration gradient is arranged at a position close to the quantum well region, so that the tellurium doping concentration is gradually increased. Through the design, the content of carbon impurities in the material and the non-radiative recombination probability are reduced, a better current expansion effect and quantum well stress release are achieved, and the luminous efficiency and performance of an infrared LED are greatly improved.

A sensor comprising one or more metal oxides as sensor material is used to detect pathogen-derived VOCs, such as those released from an infected wound. The metal oxides can comprise one or more metal elements selected from aluminum, antimony, bismuth, boron, cerium, chromium, cobalt, copper, gold, indium, iridium, iron, lanthanum, lead, manganese, molybdenum, nickel, niobium, osmium, palladium, platinum, rhodium, ruthenium, selenium, silicon, silver, tantalum, tellurium, terbium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium. The sensor device can have one or more sensors that detect and record various VOCs indicative of the presence of pathogens, which are associated with mortality and / or infection.

The invention discloses a comprehensive treatment method of platinum and palladium slag, and relates to the technical field of non-ferrous metal metallurgy. After the platinum and palladium slag is subjected to sulfating roasting, flue gas is introduced into a selenium absorption tower; hydrolyzing the roasting slag, reducing the dissolving solution to recover tellurium, and enabling the dissolving solution to enter a copper recovery process after tellurium precipitation; the dissolving slag is subjected to chlorination dissolution gold separation, and the gold separation slag is subjected to silver recovery; the gold separation liquid is reduced to obtain gold powder; carrying out platinum and palladium precipitation on the gold reduced solution, adding ammonia water into platinum and palladium precipitation to carry out platinum and palladium separation, respectively refining the separated platinum and palladium, and recovering platinum and palladium; carrying out platinum-palladium reduction on the platinum-palladium precipitation post-solution to obtain platinum-palladium precipitation slag and a platinum-palladium reduction post-solution, and returning the platinum-palladium precipitation slag to the roasting process; and performing tellurium reduction on the platinum-palladium reduced liquid to obtain tellurium powder and tellurium reduced liquid, and enabling the tellurium reduced liquid to enter a wastewater treatment process. The method has the beneficial effects that selenium, tellurium, copper, gold, silver, platinum and palladium are separated and recycled step by step, the recycling rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.

The invention particularly relates to a sulfur-loaded carbon microsphere with a hierarchical pore structure as well as a preparation method and application of the sulfur-loaded carbon microsphere. The invention provides a NiX (X = Se, Te) selenium and tellurium porous carbon microsphere sulfur-loaded positive electrode material prepared based on a spray drying technology. According to the material, gamma-cyclodextrin is used as a carbon source, NaCl is used as a template, and three-dimensional porous carbon microspheres with the particle size of 10-20 microns are formed through a spray drying method. Then, the carbonized particles are activated by KOH, and rich micropores are introduced on the basis of an original macroporous structure; and finally, loading sulfur into the porous carbon structure through a melt permeation method to prepare the sulfur composite positive electrode material suitable for the room-temperature sodium-sulfur battery. The three-dimensional porous carbon skeleton of the material can effectively buffer the volume change of sulfur in the sodium ion intercalation / deintercalation process, the electronic conductivity of an electrode is also remarkably improved, and the construction of a room-temperature sodium-sulfur battery positive electrode material with high specific capacity and high stability is facilitated.

A memory device having: a three-dimensional array of nodes configured on a semiconductive substrate. Each respective node in the array has a selector transistor; and a memory cell include: a first layer of conductive material configured as a first electrode terminal, the first electrode terminal connected to the selector transistor; a second layer of conductive material configured as a second electrode terminal; and a layer of a chalcogenide alloy sandwiched between the first electrode terminal and the second electrode terminal. The chalcogenide alloy includes a ternary Indium-Arsenic-Selenium material or a ternary Indium-Arsenic-Tellurium material, deposited using a technique of atomic layer deposition.

A method for producing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, the method of an embodiment includes preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, wherein the preparing of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, wherein the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticle is configured to emit blue light.

The present invention discloses a tellurium-lead-lithium oxide glass powder for BC cell N-region conductive paste and its preparation method, belonging to the field of photovoltaic silver paste. The glass powder adopts components with high Pb, Te, and Li: aTeO2 - bPbO - cLi2O - dBi2O3 - eWO3 - fZnO - gSiO2 - hNa2O; where a + b + c + d + e + f + g + h = 1, 0.2 < a < 0.4, 0.1 < b < 0.4, 0.1 < c < 0.25, 0 < d < 0.1, 0 < e < 0.1, 0 < f < 0.1, 0 < g < 0.1, 0 < h < 0.05, and a + b > 0.5, and the ratio of c to h is (3 - 10):1. By controlling the specific Pb, Te, and Li contents and the specific Li / Na ratio in the present invention, a strong corrosion effect on the poly layer of the cell is achieved, enabling more silver ions dissolved in the glass liquid to recrystallize on the surface of the silicon wafer, thereby achieving good ohmic contact.

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.

The invention discloses a tellurium / tin disulfide van der Waals heterojunction multifunctional device and a preparation method thereof. The tellurium / tin disulfide van der Waals heterojunction multifunctional device comprises a substrate, a Te nanowire prepared on the substrate, a SnS2 layer prepared on the substrate, and a drain electrode and a source electrode which are prepared on the substrate, the drain electrode partially covers the Te nanowire, and the source electrode partially covers the SnS2 layer; the SnS2 layer partially covers the Te nanowire; the part, covering the Te nanowire, of the drain electrode is far away from the part, covering the Te nanowire, of the SnS2 layer, and the part, covering the SnS2 layer, of the source electrode is far away from the part, covering the Te nanowire, of the SnS2 layer. According to the tellurium / tin disulfide Van der Waals heterojunction multifunctional device provided by the invention, the Van der Waals heterojunction is constructed by using tellurium nanowires prepared by a PVD (Physical Van Deposition) method and mechanically stripped tin disulfide nanosheets, so that a multifunctional photoelectric device integrating photoelectric detection, photoelectric storage, photoelectric logic and photoelectric synapse is realized; and a feasible scheme is provided for solving the current situation that a single photoelectric device cannot realize multiple functions in the prior art.

A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

The invention relates to a method for recovering tellurium from copper anode slime through cooperation of ultrasound and hydrogen peroxide, and belongs to the field of wet metallurgy of scattered metal. The method comprises the following steps: drying and grinding copper anode slime to obtain copper anode slime powder; the method comprises the following steps: adding copper anode slime powder into a sulfuric acid solution, mixing to obtain copper anode slime slurry, adding hydrogen peroxide into the copper anode slime slurry, carrying out ultrasonic enhanced leaching for 20-160min, and carrying out solid-liquid separation to obtain a leaching solution containing copper and tellurium and high-grade valuable metal leaching residues. According to the method, hydrogen peroxide is effectively promoted to be decomposed by ultrasound to generate hydroxyl radicals, the oxidation potential of a system is regulated and controlled, copper and tellurium are selectively converted into copper ions, tellurate radicals enter a solution, and valuable elements such as gold, silver and selenium are enriched in slag; necessary heat is provided for the reaction by utilizing the heat effect of ultrasonic and heat released by chemical reaction, and extra heating is not needed; strong jet flow generated by ultrasound effectively destroys raw material inclusion and secondary wrapping, reaction mass transfer is enhanced, and the leaching rate of tellurium is increased. The method disclosed by the invention is simple in leaching process operation, low in cost and high in reaction speed.

The invention belongs to the technical field of preparation of high-performance thermoelectric materials, and particularly relates to a method for preparing a GeTe-based thermoelectric material by eliminating Ge enrichment through a chemical reaction. In order to further excavate the application potential of the GeTe material, the invention provides a high-performance GeTe-based thermoelectric material, the molecular formula of the high-performance GeTe-based thermoelectric material is (GeTe) 1-x (BiSbSe) x, and x is 0.03, 0.04, 0.05 or 0.06. The thermoelectric material is prepared by taking germanium particles, tellurium particles, bismuth particles, antimony particles and selenium particles as raw materials, respectively preparing GeTe and BiSbSe3 through a melting method, mixing, carrying out high-energy ball milling treatment, and carrying out spark plasma sintering to form blocks. According to the preparation method, Ge enrichment is completely eliminated through BiSbSe3 alloying reaction, so that the thermoelectric performance and the service stability of the prepared GeTe-based thermoelectric material are effectively improved.

The invention discloses a tellurium-doped sulfurized polyacrylonitrile potassium storage negative electrode material and a potassium ion total battery, and belongs to the field of potassium ion batteries. In order to solve the technical problems of low sulfur utilization rate and poor rate capability when sulfurized polyacrylonitrile is used as a potassium storage negative electrode material, the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN) material with high performance is synthesized in a tellurium doping manner. In the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN), the content of tellurium is lower than 5%, the content of sulfur is 33%-39%, and the content of carbon is 59%-62%. When the Te-SPAN is used as a potassium storage negative electrode material, the Te-SPAN shows high potassium storage capacity, excellent rate capability and cycling stability. In addition, the potassium ion total battery assembled based on the composite negative electrode and the low-defect manganese potassium hexacyanoferrate positive electrode also shows very excellent electrochemical performance.

The invention relates to a gas phase annealing method of a cadmium zinc telluride crystal. The gas phase annealing method comprises the following steps: S1, detecting the type and the defect concentration of point defects in the cadmium zinc telluride crystal; s2, determining a corresponding gas phase source for annealing regulation and control according to a point defect detection result; s3, preparing a gas phase source film on the quartz plate through physical vapor deposition; s4, confirming the gas phase source gas pressure of annealing; and S5, respectively packaging the tellurium-zinc-cadmium wafer and the quartz plate deposited with the gas-phase source film at two ends of an annealing quartz tube, then placing the annealing quartz tube in an annealing furnace, respectively heating the two ends of the annealing quartz tube, and finally obtaining the CdZnTe crystal modified by gas-phase annealing. Compared with the prior art, the method has the advantages that the variety and content of the gas phase source can be regulated and controlled, and finally the tellurium-zinc-cadmium crystal of which the internal defects are remarkably reduced and the electrical property of the crystal is remarkably improved is obtained.

The invention discloses a tellurium-doped copper sulfide-based nano composite material with a core-shell structure as well as a preparation method and application thereof, and belongs to the technical field of zinc ion battery negative electrode materials. The method comprises the following steps: dissolving a copper source, a sulfur source, a carbon source and a tellurium source in a mixed solution of deionized water and ethylene glycol, uniformly stirring and mixing, carrying out hydrothermal reaction and centrifugal cleaning, collecting a precipitation product, and carrying out vacuum drying; and carrying out calcination reaction to obtain the tellurium-doped copper sulfide-based nano composite material with the core-shell structure. The inner-layer microspheres are microspheres formed by stacking tellurium-doped copper sulfide flower-shaped nanosheets; and the outer coating layer is a carbon layer. Through the synergistic effect of tellurium doping and carbon coating, the electron conduction and the structural stability of the material are effectively enhanced, and the cycle performance and the rate capability of the aqueous zinc ion battery are remarkably improved. As a negative electrode of the zinc ion battery, the material can effectively improve cyclic reversibility, has remarkable reversible capacity, improves the performance of the zinc ion battery, and is suitable for industrial production and large-scale energy storage.

According to the preparation method of the free-cutting lead brass alloy, trace elements such as tellurium, cobalt, samarium and selenium are added into lead brass, the tellurium, the selenium and the like can easily form low-melting-point compounds with other elements, grain growth can be inhibited, dispersed distribution of fine lead particles is promoted, stress concentration is reduced, and the cutting performance is improved; by adding cobalt, samarium and the like, grain refinement is facilitated, distribution and forms of selenium, tellurium and other elements are changed, alloy fluidity is promoted, dispersed distribution of lead and the like is promoted to be more uniform, the cutting performance is further improved, in addition, dissolution of lead can be inhibited through the passive film layer, the environment-friendly performance is improved, and harm caused by dissolution of lead is reduced.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

A carbon material and a preparation method therefor and a use thereof. The carbon material has pores, and the pore volume of micropores among the pores is greater than or equal to 0.05 cm3 / g. The carbon material contains a doping element, and the doping element includes at least one of nitrogen, phosphorus, arsenic, oxygen, sulfur, selenium, and tellurium. The internal doping concentration of the doping element in the carbon material is Q1 wt%, wherein Q1<8. The surface doping concentration of the doping element in the carbon material is Q2 wt%, wherein 10≤Q2≤25. Q1 wt% and Q2 wt% are obtained by means of the following test method: taking a sample of m1 g from the carbon material, wherein m1≥10; using a scanning electron microscope-energy dispersive spectrometer to test the sample to obtain Q2 wt%; and using a focused ion beam instrument to perform cross-section treatment on the sample, and using the scanning electron microscope-energy dispersive spectrometer to test the cross-section of the sample to obtain Q1 wt%.

The invention discloses tellurium-lead-lithium oxide glass powder for BC battery N-region conductive paste and a preparation method of the tellurium-lead-lithium oxide glass powder, and belongs to the field of photovoltaic silver paste. The glass powder is prepared from components with high contents of Pb, Te and Li as follows: aTeO2-bPbO-cLi2O-dBi2O3-eWO3-fZnO-gSiO2-hNa2O, and the glass powder is prepared from components with high contents of Pb, Te and Li; wherein a + b + c + d + e + f + g + h = 1, 0.2 lt; a < lt >; 0.1 1t, 0.4, 0.1 1t; blt; 0.1 1t, 0.4, 0.1 1t; clt; ct; 0.25, 0 lt; dlt; 0.1, 0 lt; lt, lt; 0.1, 0 lt; flt; 0.1, 0 lt; glt; 0.1, 0 lt; hlt; 0.05, a + b > 0.5, and the ratio of c to h is (3-10): 1. Through specific Pb, Te and Li content control and a specific Li / Na ratio, a strong corrosion effect on a poly layer of a battery piece is achieved, more silver ions dissolved in molten glass can be recrystallized on the surface of a silicon wafer, and thus good ohmic contact is achieved.

The invention discloses a method for cooperatively treating a lead-copper anode slime mixture through a noble lead furnace and a top-blown furnace, which comprises the following steps: mixing copper-lead anode slime according to a certain proportion, conveying the copper-lead anode slime into the noble lead furnace for melting, dividing the copper-lead anode slime into a reducing slag layer and a noble lead layer in a reducing atmosphere in the furnace, conveying the slag material into a slag converter through a chute, precious lead is conveyed into the top-blowing silver separating furnace through a chute to be oxidized and refined, and reducing slag is subjected to slag material secondary sedimentation in the slag converter. Later-stage slag, tellurium slag, alloy cleaning slag and crude silver are produced through deep oxidation refining, the later-stage slag returns to a bismuth system for treatment, the tellurium slag returns to a tellurium system for treatment, the alloy cleaning slag returns to a refining furnace for treatment, and the crude silver returns to gold, silver, platinum and palladium for treatment. The bottom blowing smelting furnace, the antimony production system and the bismuth production system are organically combined for cooperative treatment, liquid lead slag material chute stepped closed conveying is achieved in the production process, the production period can be shortened, the metal amount occupation pressure is reduced, the gold and silver direct recovery rate is increased, the working environment is improved, the labor intensity is reduced, and the production cost is reduced.

The invention relates to a preparation method of a platinum-doped hollow gold nanorod with high photo-thermal stability. The invention belongs to the technical field of nano material preparation. The preparation method comprises the following steps: adding a tellurium precursor substance and a selenium precursor substance into a hydrazine hydrate-containing solution, continuously magnetically stirring, and diluting by using an aqueous solution of lauryl sodium sulfate after the reaction is completed, so as to obtain the tellurium-selenium nanorod; and dispersing the prepared tellurium-selenium nanorod in pure water, adding a gold precursor, a platinum precursor and a modifier at the same time, and then performing centrifugal separation to obtain the platinum-doped hollow gold nanorod. The thermal stability of the hollow gold nanorod is effectively improved through platinum doping, and when the platinum doping proportion is 10% or above, the light and heat stability of the hollow gold nanorod is obviously improved; the positive significance is realized on the full play of the effect of the material in photo-thermal therapy and related combined therapy application.

The invention discloses a preparation method of an N-type bismuth telluride-based thermoelectric thin film. The preparation method comprises the following steps: obtaining a bismuth raw material, a tellurium raw material and a selenium raw material; the preparation method comprises the following steps: smelting, grinding and sintering a bismuth raw material, a tellurium raw material and a selenium raw material to obtain an N-type bismuth-tellurium-selenium-based block target material; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through magnetron sputtering equipment, so that a bismuth-tellurium-selenium-based thin film is obtained; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through high-vacuum thermal evaporation equipment, so that a homogeneous-layer bismuth-tellurium-selenium-based thin film is obtained; according to the preparation method, the homogeneous layer bismuth-tellurium-selenium-based thin film is subjected to annealing treatment to obtain the N-type bismuth telluride-based thermoelectric thin film, and due to the fact that the method for preparing the bismuth-tellurium-selenium-based thin film through magnetron sputtering equipment and the method for preparing the bismuth-tellurium-selenium-based thin film through high-vacuum thermal evaporation equipment are combined, the high-performance N-type bismuth telluride-based thermoelectric thin film is obtained.

The invention discloses medium-entropy metal telluride and a preparation method and application thereof.The preparation method comprises the specific steps that metal salt and fumaric acid are in an N, N-dimethylformamide solvent environment, metal ions and carboxyl are made to make full contact and coordinate, and a metal-organic complex precursor solution is constructed; reacting the precursor solution at a specific temperature to form an ordered crystal structure, namely Fe2 (CoNi)-MOF, in molecules and among the molecules of the metal-organic complex through a complex chemical rearrangement and bonding process; fe2 (CoNi)-MOF and tellurium powder are subjected to a series of synergistic reactions under high-temperature calcination of H2 / Ar mixed gas, and the medium-entropy metal telluride is generated. The medium-entropy metal telluride prepared by the invention has efficient catalytic hydrogen evolution and oxygen evolution potential in a water electrolysis hydrogen production reaction, can greatly improve catalytic efficiency and reaction dynamic characteristics, and is used for preparing a water electrolysis hydrogen production catalyst.

The invention relates to a tellurium-cadmium-mercury detector with a low-temperature pre-amplification circuit. An indium sheet, an aluminum nitride ceramic circuit board, low-temperature glue, the tellurium-cadmium-mercury detector and a platinum resistor are sequentially arranged on a Dewar cold head; a low-temperature pre-amplification circuit is arranged on the aluminum nitride ceramic circuit board and comprises two bias branches, a feedback loop used for setting bias current for the detector, four channels capable of being externally gated, a positive feedback loop used for setting amplification gain, a series resistor, a low-temperature resistor, a low-temperature resistor, a low-temperature resistor, a low-temperature resistor, a high-temperature resistor and a low-temperature resistor, wherein the positive feedback loop is used for adjusting nonlinearity of an output signal under strong illumination; therefore, oscillation of the amplifying circuit at low temperature is suppressed. The detector and the pre-amplification circuit are closely interconnected, and electromagnetic interference coupled into a circuit loop can be effectively reduced when the detector works in a low-temperature environment; when working, the circuit is arranged in a metal Dewar, and the metal shell of the Dewar can shield external electromagnetic interference, so that the influence of the electromagnetic interference on the amplification circuit can be further reduced, and the overall signal-to-noise ratio is effectively improved.

The utility model belongs to the technical field of nonferrous metallurgy, and particularly relates to a slag salvaging device special for a tellurium and copper removal pot, which comprises a digging spoon and a telescopic rod, the digging spoon is fixedly connected with the telescopic rod, the digging spoon comprises a spoon head and a spoon handle, one side of the spoon head is fixedly connected with the spoon handle, one side of the spoon head, opposite to the spoon handle, is provided with digging teeth, and the telescopic rod is fixedly connected with the digging teeth. A bushing structure is arranged at the bottom of the spoon head and comprises a first bushing and a second bushing, the second bushing is horizontally arranged, an obtuse angle is formed between the first bushing and the second bushing, the digging teeth are correspondingly arranged above the first bushing, a worker pulls tellurium slag and copper slag in a boiler through the digging teeth, and the tellurium slag and the copper slag are gathered and then fished out. The first leakage plate and the second leakage plate which are arranged at the bottom of the spoon head are used for filtering tellurium slag and copper slag liquid, the first leakage plate is fixed through screws, the second leakage plate is fixed in an inserted connection mode, replacement is convenient, and the first telescopic rod and the second telescopic rod are fixed through the fixing assembly in a threaded connection mode.