514 results about "Tellurium" patented technology

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

The invention discloses a comprehensive treatment method of platinum and palladium slag, and relates to the technical field of non-ferrous metal metallurgy. After the platinum and palladium slag is subjected to sulfating roasting, flue gas is introduced into a selenium absorption tower; hydrolyzing the roasting slag, reducing the dissolving solution to recover tellurium, and enabling the dissolving solution to enter a copper recovery process after tellurium precipitation; the dissolving slag is subjected to chlorination dissolution gold separation, and the gold separation slag is subjected to silver recovery; the gold separation liquid is reduced to obtain gold powder; carrying out platinum and palladium precipitation on the gold reduced solution, adding ammonia water into platinum and palladium precipitation to carry out platinum and palladium separation, respectively refining the separated platinum and palladium, and recovering platinum and palladium; carrying out platinum-palladium reduction on the platinum-palladium precipitation post-solution to obtain platinum-palladium precipitation slag and a platinum-palladium reduction post-solution, and returning the platinum-palladium precipitation slag to the roasting process; and performing tellurium reduction on the platinum-palladium reduced liquid to obtain tellurium powder and tellurium reduced liquid, and enabling the tellurium reduced liquid to enter a wastewater treatment process. The method has the beneficial effects that selenium, tellurium, copper, gold, silver, platinum and palladium are separated and recycled step by step, the recycling rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.

The present invention discloses a tellurium-lead-lithium oxide glass powder for BC cell N-region conductive paste and its preparation method, belonging to the field of photovoltaic silver paste. The glass powder adopts components with high Pb, Te, and Li: aTeO2 - bPbO - cLi2O - dBi2O3 - eWO3 - fZnO - gSiO2 - hNa2O; where a + b + c + d + e + f + g + h = 1, 0.2 < a < 0.4, 0.1 < b < 0.4, 0.1 < c < 0.25, 0 < d < 0.1, 0 < e < 0.1, 0 < f < 0.1, 0 < g < 0.1, 0 < h < 0.05, and a + b > 0.5, and the ratio of c to h is (3 - 10):1. By controlling the specific Pb, Te, and Li contents and the specific Li / Na ratio in the present invention, a strong corrosion effect on the poly layer of the cell is achieved, enabling more silver ions dissolved in the glass liquid to recrystallize on the surface of the silicon wafer, thereby achieving good ohmic contact.

The invention relates to a method for recovering tellurium from copper anode slime through cooperation of ultrasound and hydrogen peroxide, and belongs to the field of wet metallurgy of scattered metal. The method comprises the following steps: drying and grinding copper anode slime to obtain copper anode slime powder; the method comprises the following steps: adding copper anode slime powder into a sulfuric acid solution, mixing to obtain copper anode slime slurry, adding hydrogen peroxide into the copper anode slime slurry, carrying out ultrasonic enhanced leaching for 20-160min, and carrying out solid-liquid separation to obtain a leaching solution containing copper and tellurium and high-grade valuable metal leaching residues. According to the method, hydrogen peroxide is effectively promoted to be decomposed by ultrasound to generate hydroxyl radicals, the oxidation potential of a system is regulated and controlled, copper and tellurium are selectively converted into copper ions, tellurate radicals enter a solution, and valuable elements such as gold, silver and selenium are enriched in slag; necessary heat is provided for the reaction by utilizing the heat effect of ultrasonic and heat released by chemical reaction, and extra heating is not needed; strong jet flow generated by ultrasound effectively destroys raw material inclusion and secondary wrapping, reaction mass transfer is enhanced, and the leaching rate of tellurium is increased. The method disclosed by the invention is simple in leaching process operation, low in cost and high in reaction speed.

The invention discloses a tellurium-doped sulfurized polyacrylonitrile potassium storage negative electrode material and a potassium ion total battery, and belongs to the field of potassium ion batteries. In order to solve the technical problems of low sulfur utilization rate and poor rate capability when sulfurized polyacrylonitrile is used as a potassium storage negative electrode material, the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN) material with high performance is synthesized in a tellurium doping manner. In the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN), the content of tellurium is lower than 5%, the content of sulfur is 33%-39%, and the content of carbon is 59%-62%. When the Te-SPAN is used as a potassium storage negative electrode material, the Te-SPAN shows high potassium storage capacity, excellent rate capability and cycling stability. In addition, the potassium ion total battery assembled based on the composite negative electrode and the low-defect manganese potassium hexacyanoferrate positive electrode also shows very excellent electrochemical performance.

The invention discloses a tellurium-doped copper sulfide-based nano composite material with a core-shell structure as well as a preparation method and application thereof, and belongs to the technical field of zinc ion battery negative electrode materials. The method comprises the following steps: dissolving a copper source, a sulfur source, a carbon source and a tellurium source in a mixed solution of deionized water and ethylene glycol, uniformly stirring and mixing, carrying out hydrothermal reaction and centrifugal cleaning, collecting a precipitation product, and carrying out vacuum drying; and carrying out calcination reaction to obtain the tellurium-doped copper sulfide-based nano composite material with the core-shell structure. The inner-layer microspheres are microspheres formed by stacking tellurium-doped copper sulfide flower-shaped nanosheets; and the outer coating layer is a carbon layer. Through the synergistic effect of tellurium doping and carbon coating, the electron conduction and the structural stability of the material are effectively enhanced, and the cycle performance and the rate capability of the aqueous zinc ion battery are remarkably improved. As a negative electrode of the zinc ion battery, the material can effectively improve cyclic reversibility, has remarkable reversible capacity, improves the performance of the zinc ion battery, and is suitable for industrial production and large-scale energy storage.

The invention discloses tellurium-lead-lithium oxide glass powder for BC battery N-region conductive paste and a preparation method of the tellurium-lead-lithium oxide glass powder, and belongs to the field of photovoltaic silver paste. The glass powder is prepared from components with high contents of Pb, Te and Li as follows: aTeO2-bPbO-cLi2O-dBi2O3-eWO3-fZnO-gSiO2-hNa2O, and the glass powder is prepared from components with high contents of Pb, Te and Li; wherein a + b + c + d + e + f + g + h = 1, 0.2 lt; a < lt >; 0.1 1t, 0.4, 0.1 1t; blt; 0.1 1t, 0.4, 0.1 1t; clt; ct; 0.25, 0 lt; dlt; 0.1, 0 lt; lt, lt; 0.1, 0 lt; flt; 0.1, 0 lt; glt; 0.1, 0 lt; hlt; 0.05, a + b > 0.5, and the ratio of c to h is (3-10): 1. Through specific Pb, Te and Li content control and a specific Li / Na ratio, a strong corrosion effect on a poly layer of a battery piece is achieved, more silver ions dissolved in molten glass can be recrystallized on the surface of a silicon wafer, and thus good ohmic contact is achieved.

The invention relates to a preparation method of a platinum-doped hollow gold nanorod with high photo-thermal stability. The invention belongs to the technical field of nano material preparation. The preparation method comprises the following steps: adding a tellurium precursor substance and a selenium precursor substance into a hydrazine hydrate-containing solution, continuously magnetically stirring, and diluting by using an aqueous solution of lauryl sodium sulfate after the reaction is completed, so as to obtain the tellurium-selenium nanorod; and dispersing the prepared tellurium-selenium nanorod in pure water, adding a gold precursor, a platinum precursor and a modifier at the same time, and then performing centrifugal separation to obtain the platinum-doped hollow gold nanorod. The thermal stability of the hollow gold nanorod is effectively improved through platinum doping, and when the platinum doping proportion is 10% or above, the light and heat stability of the hollow gold nanorod is obviously improved; the positive significance is realized on the full play of the effect of the material in photo-thermal therapy and related combined therapy application.

The invention discloses a preparation method of an N-type bismuth telluride-based thermoelectric thin film. The preparation method comprises the following steps: obtaining a bismuth raw material, a tellurium raw material and a selenium raw material; the preparation method comprises the following steps: smelting, grinding and sintering a bismuth raw material, a tellurium raw material and a selenium raw material to obtain an N-type bismuth-tellurium-selenium-based block target material; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through magnetron sputtering equipment, so that a bismuth-tellurium-selenium-based thin film is obtained; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through high-vacuum thermal evaporation equipment, so that a homogeneous-layer bismuth-tellurium-selenium-based thin film is obtained; according to the preparation method, the homogeneous layer bismuth-tellurium-selenium-based thin film is subjected to annealing treatment to obtain the N-type bismuth telluride-based thermoelectric thin film, and due to the fact that the method for preparing the bismuth-tellurium-selenium-based thin film through magnetron sputtering equipment and the method for preparing the bismuth-tellurium-selenium-based thin film through high-vacuum thermal evaporation equipment are combined, the high-performance N-type bismuth telluride-based thermoelectric thin film is obtained.

The invention discloses a method for recovering valuable metals from copper anode slime step by step, and belongs to the technical field of metallurgy and chemical industry. According to the method, through control over the oxidation-reduction potential, the oxidation-reduction potential is high in the leaching stage, and it is guaranteed that gold, selenium, tellurium and the like can be oxidized to enter a leaching solution; in the reduction stage, gold, selenium and tellurium products are reduced step by step according to the difference of gold, selenium and tellurium in reduction potentials; in the leaching stage, soluble chlorine salt is added while enough oxidation potential is guaranteed, enough chloride ions are provided for the solution, and therefore gold can enter the solution in the form of AuCl4-(tetrachloroauric acid); meanwhile, in the oxidation leaching stage, a small amount of silver enters the solution in the form of silver sulfate or silver complex, and under the condition that enough chloride ions are provided, silver is precipitated and retained in residues in the form of silver chloride, so that separation of gold and silver is achieved, and meanwhile dispersion of gold and silver in the leaching process is reduced. According to the method, valuable metal is efficiently separated and recycled.

The application belongs to the technical field of metallurgy, and relates to a method for efficiently purifying and directionally removing oxygen and impurities from a precious antimony alloy, which comprises the following steps: S1, after the precious antimony alloy is melted, an arsenic-tellurium removal agent is added, and smelting is performed at 600-610 DEG C to obtain a pre-impurity removal alloy melt and an arsenic-tellurium residue; the arsenic-tellurium removal agent is a mixture of sodium hydroxide and sodium nitrate; S2, the pre-impurity removal alloy melt obtained in step S1 is heated to 620-640 DEG C, a reducing agent is added, and smelting is performed to obtain an arsenic alkali residue and a refined antimony alloy; the reducing agent is a mixture of antimony sulfide and sodium hydroxide; S3, the arsenic-tellurium residue obtained in step S1 and the arsenic alkali residue obtained in step S2 are ball milled, leaching and filtration are performed to obtain a filtrate and a filter residue; S4, the filtrate obtained in step S3 is mixed with sulfuric acid, and after reaction, a neutralization residue and a neutralization liquid are obtained. By introducing the efficient arsenic-tellurium removal agent and the reducing agent, the content of antimony in the arsenic alkali residue is significantly reduced, and the direct recovery rate of antimony and the recovery rate of tellurium are effectively improved.

A hydrometallurgical process for recovering a plurality of metals from a complex rare and precious material, comprising the following steps: step 1: adding a complex rare and precious material to a hydrochloric acid solution, adding an oxidant for reaction, and then performing filtration to obtain a chlorination liquid and a chlorination residue; step 2: using two-stage counter-current gold loading to obtain a gold-loaded liquid and a post-loading liquid, reducing the gold-loaded liquid, performing clarification to obtain an organic phase, and filtering a precipitate to separate a post-reduction liquid and sponge gold; performing evaporation and concentration on the post-reduction liquid to produce a concentrate 1 and a condensate; and cooling and crystallizing the concentrate, performing filtration to obtain residual oxalic acid, and returning the residual oxalic acid to the reduction process and a post-crystallization liquid to gold loading; step 3: performing low-temperature distillation on the post-loading liquid to obtain a concentrate 2; step 4: performing high-temperature distillation on the concentrate 2 to obtain a concentrate 3; step 5: performing directional crystallization and centrifugal filtration on the concentrate 3 to obtain a crystallization residue and selenous acid; and step 6: washing the crystallization residue by using cold water or a low-acid-level condensate produced in step 3, and performing filtration to obtain a tellurium residue and a palladium-platinum-rhodium-rich liquid.

The invention discloses a method for stepwise dissolution of copper, selenium and tellurium in copper anode slime and enrichment of precious metals, the method comprises the steps of ball milling and drying, pressure leaching, oxygen pressure conversion and alkaline leaching, in the pressure leaching process, the oxygen partial pressure in a sulfuric acid solution with the concentration of 10-30 g / L is controlled to be 0.05-0.2 MPa at the temperature of 100-120 DEG C, NaCl and HCl are added in the oxygen pressure conversion to improve the Se recovery rate, and the alkaline leaching is carried out at the temperature of 100-120 DEG C; na2S is added in alkaline leaching, so that the tellurium recovery rate is remarkably improved, and the copper-selenium-tellurium leaching efficiency is high.

The invention relates to a silicon-based tellurium-cadmium-mercury material, an infrared focal plane detector and a preparation method of the silicon-based tellurium-cadmium-mercury material. The silicon-based tellurium-cadmium-mercury material comprises a silicon substrate, a cadmium telluride buffer layer and a tellurium-cadmium-mercury layer, wherein the cadmium telluride buffer layer and the tellurium-cadmium-mercury layer grow on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with an optical metasurface structure, and the optical metasurface structure is composed of microstructure units which are periodically arranged; the size of the maximum cross section of each microstructure unit ranges from 100 nm to 150 nm, the distance between the centers of the maximum cross sections of the adjacent microstructure units ranges from 800 nm to 1000 nm, and the size of each microstructure unit in the direction perpendicular to the surface of the silicon substrate ranges from 400 nm to 600 nm. Experimental results show that when incident light is vertically incident, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is greater than or equal to 90%; and when the incident angle of incident light is 0-30 degrees, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is still greater than or equal to 90%.

The invention discloses a tellurium copper slag comprehensive treatment technology and a multi-element collaborative recovery method, and relates to the technical field of non-ferrous metal metallurgy and solid waste recycling, and the tellurium copper slag comprehensive treatment technology comprises the following steps: pretreatment and arsenic volatilization removal, selective acid leaching copper extraction, tellurium enrichment through alkaline oxidation, tellurium reduction and arsenic recycling. According to the method, by combining the advantages of a wet process and a pyrogenic process, the defects that in the prior art, arsenic cannot be effectively recycled in the tellurium-copper slag treatment process and the process is complex are overcome, efficient copper and tellurium separation is achieved through coordinated regulation and control of an acid / alkali medium and an oxidizing agent, arsenic is recycled in an industrial raw material form, and the limitation that only tellurium and copper are concerned in a traditional process is broken through.

The present application relates to the technical field of anode slime treatment, and discloses a method for removing antimony and tellurium from anode slime by multi-stage pressurization and chlorine-free process, which comprises the following steps: S1, anode slime pretreatment, S2, multi-stage pressurization treatment, S3, separation of antimony and tellurium from the anode slime, S4, preparation of sodium antimonate, S5, tail gas treatment, S6, waste liquid treatment, S7, post-treatment. The method is characterized by the following: one-stage pressurized thiourea transformation is used for deep copper removal, and two-stage pressurized sulfuration is used for chlorine-free antimony and tellurium removal. The process flow does not involve chlorine-containing substances, and the pressurized leaching of alkaline medium does not produce substances with strong corrosivity, thereby reducing the damage to the equipment. In the process of removing antimony and tellurium, the harmful substances generated during the reaction can be treated by waste gas and waste liquid treatment, and the by-products, precipitates, incompletely removed heavy metal ions, trace pollutants and the like in the tail liquid can be removed or converted into harmless substances, so that the tail liquid meets the discharge standard and the environmental pollution caused by the tail liquid discharge is reduced.

The present invention relates to single-crystal spherical carbon nanoparticles that are single-crystals, are spherical, and have an average particle diameter of 1 nm to 30 nm. The single-crystal spherical carbon nanoparticles of the present invention can generate fluorescence with a high fluorescence quantum efficiency when excited by a light in wide wavelength range from ultraviolet light to visible light, and have fluorescence quantum efficiency of 10% or more compared to conventionally known carbon nanoparticles. The single-crystal spherical carbon nanoparticles can be used for drug delivery, because they do not have toxicities to living organisms that compound semiconductors made of cadmium, selenium, tellurium, and the like have. Furthermore, since the single-crystal spherical carbon nanoparticles are spherical, they can be densely packed as electrode materials for solar cells and secondary ion batteries, and can be used for negative electrode for lithium ion batteries or electrode material for solar cells.

The utility model discloses a bottom solution residue prevention sample holder for vertical tellurium-cadmium-mercury liquid-phase epitaxial growth, which belongs to the field of infrared semiconductor material preparation and comprises a conical flow guide base, a micro-groove array, a SiC / SiO2 super-lyophobic functional layer and a thermal gradient regulation and control module. During working, the frame body is preheated, the melt flows back along the chamfer surface under the action of gravity during lifting, the micro-grooves generate capillary force for directional diversion, the super-lyophobic layer reduces the adhesion work, and the thermal gradient inhibits solution solidification. By applying the sample holder, the residual quantity of a melt can be greatly reduced, the defect density of an epitaxial layer is reduced, the available area is increased to more than 95%, and the problem of millimeter-scale particle residue in the traditional LPE growth is solved.

The invention discloses a surface etching method for revealing dislocation defects of tellurium indium lead single crystals, and relates to a method for revealing crystal defects. The invention aims to provide a surface etching method capable of accurately exposing crystal defects. The method comprises the following steps: firstly, carrying out directional cutting, multi-stage mechanical polishing and chemical mechanical polishing on a PIT single crystal to obtain a smooth and damage-free surface; and reacting iodine with concentrated nitric acid to generate iodic acid as a main oxidant, adding hydrofluoric acid for activation, diluting with an acetic acid-water mixed solution, and etching the crystal at a low temperature of 10 + / -1 DEG C under ultrasonic assistance. According to the method, the regular triangular conical etching pit can be formed on the PIT single crystal (001) surface, the depth is 100-300 nm, the pit bottom points to the [001] direction, and the dislocation defect is clearly revealed. The method has the advantages of clear etching morphology, high sensitivity, high reliability and simplicity and convenience in operation, and can be applied to the fields of PIT single crystal quality evaluation, defect analysis and growth process optimization.

The invention relates to the technical field of secondary battery detection, and provides a secondary battery in-situ detection device and method.The secondary battery in-situ detection device comprises an in-situ battery, a precise three-dimensional moving platform, a Fourier transform microscopic infrared spectrometer and an electrochemical workstation, and the in-situ battery comprises an upper cover, an optical window, a middle supporting body, a working electrode and other components; micro-area positioning is realized through the three-dimensional mobile platform, the synchronization system guarantees time sequence synchronization of spectrum and electrochemical data, a mercury-cadmium-tellurium detector of the spectrometer captures weak infrared signals, in-situ, dynamic and micro-area detection of interface reaction of the secondary battery is finally realized, and the detection accuracy and reliability are effectively improved.

The embodiment of the present application provides a kind of N-type IBC battery negative electrode grid silver paste, N-type IIBC battery and preparation method thereof, wherein, the N-type IBC battery negative electrode grid silver paste provided in the embodiment of the present application includes organic auxiliary agent, silver powder, organic binder and doped glass powder, and the doping element of the doped glass powder is antimony, tellurium and tungsten.By doping antimony, tellurium and tungsten elements in glass powder, antimony element is the same as phosphorus, and the doping of N area can be increased;And tellurium and tungsten have the effect of dissolving silver, which can reduce the contact resistivity of silver grid line, improve the fill factor, thereby improving the photoelectric conversion efficiency of battery;Thus, the problem that the existing N-type IBC battery cannot form n+ region, so that the photoelectric conversion efficiency of N-type IBC battery is not good.

The application discloses doped modified manganese iron phosphate with a nanoporous structure, a preparation method and application thereof. 1‑a‑b Fe a M b PO4, 0.01<=a<=0.98, 10 ‑4 <=b<=10 ‑2 M is a combination of one or more selected from magnesium, titanium, vanadium, chromium, cobalt, nickel, zinc, gallium, aluminum, zirconium, niobium, molybdenum, tin, antimony, calcium, barium, strontium, boron, ruthenium, silicon, tellurium, copper and lithium, and the particle size is below 50 nm, and the material also has a porous structure. The material can be used for preparation of lithium manganese iron phosphate positive electrode materials in lithium ion batteries, and the specific capacity, rate and cycle performance of the obtained positive electrode materials are improved.

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal,wherein the nanostructures further include tellurium,wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1,wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

The application relates to the technical field of photovoltaic cells and discloses a tellurium cadmium selenide film near-space sublimation deposition method and equipment, wherein the tellurium cadmium selenide film near-space sublimation deposition method comprises the following steps: a cadmium selenide heating chamber is used to heat cadmium selenide raw materials, a first gaseous reaction precursor is obtained, the heating temperature is T1, a cadmium telluride heating chamber is used to heat cadmium telluride raw materials, a second gaseous reaction precursor is obtained, the heating temperature is T2, T1>T2 is met, the first gaseous reaction precursor is introduced into a mixing chamber through a first gas outlet pipe, the second gaseous reaction precursor is introduced into the mixing chamber through a second gas outlet pipe, mixed gas is obtained in the mixing chamber, the mixed gas is transported to a nozzle through a connecting pipe, and the nozzle is sprayed towards a substrate, so that a tellurium cadmium selenide film is formed on the surface of the substrate. The cadmium selenide and the cadmium telluride binary alloy are used for near-space sublimation deposition, the stability of the tellurium cadmium selenide film can be remarkably improved, and the photoelectric conversion efficiency of the cell is improved.

The invention discloses a conductive aluminum bar and a preparation method thereof, and belongs to the technical field of metal conductors. The conductive aluminum bar sequentially comprises an aluminum core, a copper layer coaxially arranged outside the aluminum core, and a transition connecting layer arranged between the copper layer and the aluminum core from inside to outside, the copper-aluminum interface transition layer comprises the following chemical components: 20 to 22 weight percent of copper, 5 to 6 weight percent of silicon, 1 to 2 weight percent of nickel, 1 weight percent of magnesium, 0.02 to 0.06 weight percent of boron, 0.05 to 0.1 weight percent of tellurium and the balance of aluminum; when the conductive aluminum bar is prepared, the transition connecting layer and the copper layer are sequentially and coaxially arranged outside the aluminum core, then primary drawing, preheating, heating and heat preservation, hot rolling, drawing forming, annealing treatment and surface polishing are carried out, and the conductive aluminum bar is obtained. The conductive aluminum bar provided by the invention has good mechanical properties and conductivity.

This invention provides a 210 The purification method for Po includes: under vacuum, distilling irradiation of a thorium oxide target to generate distilled gas, condensing the distilled gas in a collecting pan to obtain a distillate; soaking the collecting pan in nitric acid solution to obtain a soaking solution, evaporating it to obtain a dried product, dissolving the dried product in hydrochloric acid solution to obtain a leachate; pouring the leachate into a chromatography column packed with chloride-form anion exchange resin, rinsing the chromatography column with hydrochloric acid solution, and draining the liquid; rinsing the chromatography column with hydrochloric acid solution to allow the chloride-form anion exchange resin to react with the thorium oxide. 210 Po separation yields a product containing... 210 The purified solution of Po was diluted to obtain a diluent. Tetravalent tellurium, a reducing agent, and isopropanol were added to the diluent to obtain a mixture. The mixture was filtered to obtain an α-measurement source, and the α-spectrum was obtained by measurement. The purification method of this embodiment utilizes a thorium oxide target obtained after irradiation. 210 The differences in physicochemical properties between Po and impurities enable... 210 Purification of Po.

The disclosure relates to compositions that include a catalyst and calcium carbonate. More specifically, a composition including calcium carbonate and a catalyst that includes molybdenum (Mo), vanadium (V), tellurium (Te), niobium (Nb), and oxygen (O).

An electroluminescent device, a method for manufacturing semiconductor nanoparticles, and a display device are provided. An electroluminescent device of an embodiment includes: a first electrode and a second electrode spaced apart from each other; and a light emitting layer disposed between the first electrode and the second electrode and including semiconductor nanoparticles configured to emit blue light having a peak emission wavelength of greater than or equal to about 440 nm and less than or equal to about 480 nm, the semiconductor nanoparticles including zinc, tellurium, selenium, and sulfur, the semiconductor nanoparticles also include a metal dopant, and the metal dopant includes aluminum, gallium, zirconium, hafnium, magnesium, or a combination thereof.

The invention relates to the technical field of functional material preparation, in particular to a two-dimensional transition metal chalcogenide target material and a preparation method thereof. The method comprises the steps that high-purity tellurium and transition metal are mixed, the transition metal is high-purity tungsten or high-purity molybdenum, vacuum swing smelting is conducted at the temperature of 1100-1300 DEG C, and a cast ingot is obtained; crushing and ball-milling the cast ingot to obtain micron-sized powder: carrying out high-energy ball-milling on the micron-sized powder to obtain nano-sized powder; the nanoscale powder is subjected to heat treatment at the temperature of 150-160 DEG C, and nanopowder subjected to heat treatment is obtained; presintering the nano powder subjected to heat treatment at 300-400 DEG C, and then sintering at a high temperature of 500-750 DEG C and 20-40 MPa to obtain a target blank; and carrying out hot isostatic pressing treatment on the target blank under the conditions of 500-650 DEG C and 80-150 MPa. According to the preparation method provided by the invention, the high-quality alloy target material with high density, large size and uniform components can be obtained.

The application discloses a comprehensive treatment method of platinum-palladium slag and relates to the technical field of nonferrous metal smelting. After sulfuric acid roasting of the platinum-palladium slag, flue gas is introduced into a selenium absorption tower; the roasted slag is hydrolyzed, and tellurium is recovered by reduction of a dissolved solution; after the tellurium is precipitated, the dissolved solution is introduced into a copper recovery procedure; gold is recovered by chlorination and dissolution in the dissolved slag, and the gold-recovered slag is introduced into silver recovery; gold powder is obtained by reduction of the gold-recovered solution; platinum and palladium are precipitated from the gold-reduced solution; ammonia is added to the platinum and palladium precipitate to separate platinum and palladium; the separated platinum and palladium is refined to recover platinum and palladium; platinum and palladium are reduced from the platinum and palladium precipitated solution to obtain platinum and palladium precipitate and platinum and palladium reduced solution, and the platinum and palladium precipitate is returned to the roasting procedure; tellurium is reduced from the platinum and palladium reduced solution to obtain tellurium powder and tellurium reduced solution, and the tellurium reduced solution is introduced into a wastewater treatment procedure. The application has the beneficial effects that selenium and tellurium, copper, gold, silver, platinum and palladium are stepwise separated and recovered, the recovery rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.