699 results about "Tellurium" patented technology

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

The invention provides a preparation method of a MoTe2 single crystal. The preparation method comprises the following steps: A, weighing molybdenum powder, tellurium powder and cobalt powder according to a stoichiometric ratio; b, the powder weighed in the step A is poured into a glass beaker, convective mixing is achieved under the action of a stirrer, and the duration time is 20-30 minutes; c, pouring the powder ground in the step B into a crucible, and sealing; d, putting the crucible in the step C into a glass tube; e, covering the glass tube in the step D with a glass cap; f, vacuumizing the glass tube by using a vacuum pump set, then filling argon, repeating the gas washing process for three times, and then vacuumizing again; g, aligning the middle position of the glass cap, heating to melt the tube wall of the glass tube and the glass cap together, and completing vacuum sealing; and H, putting the glass tube in the step G into a box-type furnace, sintering, taking out, putting into a water bucket, and quenching to obtain a single crystal sample.

The invention provides an epitaxial wafer of a high-luminous-efficiency infrared light-emitting diode and a manufacturing method of the epitaxial wafer. The epitaxial wafer comprises a GaAs substrate, an N-type semiconductor structure, a quantum well active region and a P-type semiconductor structure, wherein the N-type semiconductor structure, the quantum well active region and the P-type semiconductor structure are formed on the substrate. The N-type semiconductor structure comprises an N-type AlGaAs stacking layer, diethyl tellurium (DETe) and disilane (Si2H6) are adopted for co-doping, the N-type semiconductor structure is designed to be of a superlattice structure, and the doping concentration in the vertical direction is periodically alternated from high to low; and a doping concentration gradient is arranged at a position close to the quantum well region, so that the tellurium doping concentration is gradually increased. Through the design, the content of carbon impurities in the material and the non-radiative recombination probability are reduced, a better current expansion effect and quantum well stress release are achieved, and the luminous efficiency and performance of an infrared LED are greatly improved.

The invention discloses a comprehensive treatment method of platinum and palladium slag, and relates to the technical field of non-ferrous metal metallurgy. After the platinum and palladium slag is subjected to sulfating roasting, flue gas is introduced into a selenium absorption tower; hydrolyzing the roasting slag, reducing the dissolving solution to recover tellurium, and enabling the dissolving solution to enter a copper recovery process after tellurium precipitation; the dissolving slag is subjected to chlorination dissolution gold separation, and the gold separation slag is subjected to silver recovery; the gold separation liquid is reduced to obtain gold powder; carrying out platinum and palladium precipitation on the gold reduced solution, adding ammonia water into platinum and palladium precipitation to carry out platinum and palladium separation, respectively refining the separated platinum and palladium, and recovering platinum and palladium; carrying out platinum-palladium reduction on the platinum-palladium precipitation post-solution to obtain platinum-palladium precipitation slag and a platinum-palladium reduction post-solution, and returning the platinum-palladium precipitation slag to the roasting process; and performing tellurium reduction on the platinum-palladium reduced liquid to obtain tellurium powder and tellurium reduced liquid, and enabling the tellurium reduced liquid to enter a wastewater treatment process. The method has the beneficial effects that selenium, tellurium, copper, gold, silver, platinum and palladium are separated and recycled step by step, the recycling rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.

The invention particularly relates to a sulfur-loaded carbon microsphere with a hierarchical pore structure as well as a preparation method and application of the sulfur-loaded carbon microsphere. The invention provides a NiX (X = Se, Te) selenium and tellurium porous carbon microsphere sulfur-loaded positive electrode material prepared based on a spray drying technology. According to the material, gamma-cyclodextrin is used as a carbon source, NaCl is used as a template, and three-dimensional porous carbon microspheres with the particle size of 10-20 microns are formed through a spray drying method. Then, the carbonized particles are activated by KOH, and rich micropores are introduced on the basis of an original macroporous structure; and finally, loading sulfur into the porous carbon structure through a melt permeation method to prepare the sulfur composite positive electrode material suitable for the room-temperature sodium-sulfur battery. The three-dimensional porous carbon skeleton of the material can effectively buffer the volume change of sulfur in the sodium ion intercalation / deintercalation process, the electronic conductivity of an electrode is also remarkably improved, and the construction of a room-temperature sodium-sulfur battery positive electrode material with high specific capacity and high stability is facilitated.

A memory device having: a three-dimensional array of nodes configured on a semiconductive substrate. Each respective node in the array has a selector transistor; and a memory cell include: a first layer of conductive material configured as a first electrode terminal, the first electrode terminal connected to the selector transistor; a second layer of conductive material configured as a second electrode terminal; and a layer of a chalcogenide alloy sandwiched between the first electrode terminal and the second electrode terminal. The chalcogenide alloy includes a ternary Indium-Arsenic-Selenium material or a ternary Indium-Arsenic-Tellurium material, deposited using a technique of atomic layer deposition.

A method for producing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, the method of an embodiment includes preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, wherein the preparing of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, wherein the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticle is configured to emit blue light.

The present invention discloses a tellurium-lead-lithium oxide glass powder for BC cell N-region conductive paste and its preparation method, belonging to the field of photovoltaic silver paste. The glass powder adopts components with high Pb, Te, and Li: aTeO2 - bPbO - cLi2O - dBi2O3 - eWO3 - fZnO - gSiO2 - hNa2O; where a + b + c + d + e + f + g + h = 1, 0.2 < a < 0.4, 0.1 < b < 0.4, 0.1 < c < 0.25, 0 < d < 0.1, 0 < e < 0.1, 0 < f < 0.1, 0 < g < 0.1, 0 < h < 0.05, and a + b > 0.5, and the ratio of c to h is (3 - 10):1. By controlling the specific Pb, Te, and Li contents and the specific Li / Na ratio in the present invention, a strong corrosion effect on the poly layer of the cell is achieved, enabling more silver ions dissolved in the glass liquid to recrystallize on the surface of the silicon wafer, thereby achieving good ohmic contact.

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.

The invention discloses a tellurium / tin disulfide van der Waals heterojunction multifunctional device and a preparation method thereof. The tellurium / tin disulfide van der Waals heterojunction multifunctional device comprises a substrate, a Te nanowire prepared on the substrate, a SnS2 layer prepared on the substrate, and a drain electrode and a source electrode which are prepared on the substrate, the drain electrode partially covers the Te nanowire, and the source electrode partially covers the SnS2 layer; the SnS2 layer partially covers the Te nanowire; the part, covering the Te nanowire, of the drain electrode is far away from the part, covering the Te nanowire, of the SnS2 layer, and the part, covering the SnS2 layer, of the source electrode is far away from the part, covering the Te nanowire, of the SnS2 layer. According to the tellurium / tin disulfide Van der Waals heterojunction multifunctional device provided by the invention, the Van der Waals heterojunction is constructed by using tellurium nanowires prepared by a PVD (Physical Van Deposition) method and mechanically stripped tin disulfide nanosheets, so that a multifunctional photoelectric device integrating photoelectric detection, photoelectric storage, photoelectric logic and photoelectric synapse is realized; and a feasible scheme is provided for solving the current situation that a single photoelectric device cannot realize multiple functions in the prior art.

The invention relates to a method for recovering tellurium from copper anode slime through cooperation of ultrasound and hydrogen peroxide, and belongs to the field of wet metallurgy of scattered metal. The method comprises the following steps: drying and grinding copper anode slime to obtain copper anode slime powder; the method comprises the following steps: adding copper anode slime powder into a sulfuric acid solution, mixing to obtain copper anode slime slurry, adding hydrogen peroxide into the copper anode slime slurry, carrying out ultrasonic enhanced leaching for 20-160min, and carrying out solid-liquid separation to obtain a leaching solution containing copper and tellurium and high-grade valuable metal leaching residues. According to the method, hydrogen peroxide is effectively promoted to be decomposed by ultrasound to generate hydroxyl radicals, the oxidation potential of a system is regulated and controlled, copper and tellurium are selectively converted into copper ions, tellurate radicals enter a solution, and valuable elements such as gold, silver and selenium are enriched in slag; necessary heat is provided for the reaction by utilizing the heat effect of ultrasonic and heat released by chemical reaction, and extra heating is not needed; strong jet flow generated by ultrasound effectively destroys raw material inclusion and secondary wrapping, reaction mass transfer is enhanced, and the leaching rate of tellurium is increased. The method disclosed by the invention is simple in leaching process operation, low in cost and high in reaction speed.

The invention belongs to the technical field of preparation of high-performance thermoelectric materials, and particularly relates to a method for preparing a GeTe-based thermoelectric material by eliminating Ge enrichment through a chemical reaction. In order to further excavate the application potential of the GeTe material, the invention provides a high-performance GeTe-based thermoelectric material, the molecular formula of the high-performance GeTe-based thermoelectric material is (GeTe) 1-x (BiSbSe) x, and x is 0.03, 0.04, 0.05 or 0.06. The thermoelectric material is prepared by taking germanium particles, tellurium particles, bismuth particles, antimony particles and selenium particles as raw materials, respectively preparing GeTe and BiSbSe3 through a melting method, mixing, carrying out high-energy ball milling treatment, and carrying out spark plasma sintering to form blocks. According to the preparation method, Ge enrichment is completely eliminated through BiSbSe3 alloying reaction, so that the thermoelectric performance and the service stability of the prepared GeTe-based thermoelectric material are effectively improved.

The invention discloses a tellurium-doped sulfurized polyacrylonitrile potassium storage negative electrode material and a potassium ion total battery, and belongs to the field of potassium ion batteries. In order to solve the technical problems of low sulfur utilization rate and poor rate capability when sulfurized polyacrylonitrile is used as a potassium storage negative electrode material, the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN) material with high performance is synthesized in a tellurium doping manner. In the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN), the content of tellurium is lower than 5%, the content of sulfur is 33%-39%, and the content of carbon is 59%-62%. When the Te-SPAN is used as a potassium storage negative electrode material, the Te-SPAN shows high potassium storage capacity, excellent rate capability and cycling stability. In addition, the potassium ion total battery assembled based on the composite negative electrode and the low-defect manganese potassium hexacyanoferrate positive electrode also shows very excellent electrochemical performance.

The invention discloses a tellurium-doped copper sulfide-based nano composite material with a core-shell structure as well as a preparation method and application thereof, and belongs to the technical field of zinc ion battery negative electrode materials. The method comprises the following steps: dissolving a copper source, a sulfur source, a carbon source and a tellurium source in a mixed solution of deionized water and ethylene glycol, uniformly stirring and mixing, carrying out hydrothermal reaction and centrifugal cleaning, collecting a precipitation product, and carrying out vacuum drying; and carrying out calcination reaction to obtain the tellurium-doped copper sulfide-based nano composite material with the core-shell structure. The inner-layer microspheres are microspheres formed by stacking tellurium-doped copper sulfide flower-shaped nanosheets; and the outer coating layer is a carbon layer. Through the synergistic effect of tellurium doping and carbon coating, the electron conduction and the structural stability of the material are effectively enhanced, and the cycle performance and the rate capability of the aqueous zinc ion battery are remarkably improved. As a negative electrode of the zinc ion battery, the material can effectively improve cyclic reversibility, has remarkable reversible capacity, improves the performance of the zinc ion battery, and is suitable for industrial production and large-scale energy storage.

According to the preparation method of the free-cutting lead brass alloy, trace elements such as tellurium, cobalt, samarium and selenium are added into lead brass, the tellurium, the selenium and the like can easily form low-melting-point compounds with other elements, grain growth can be inhibited, dispersed distribution of fine lead particles is promoted, stress concentration is reduced, and the cutting performance is improved; by adding cobalt, samarium and the like, grain refinement is facilitated, distribution and forms of selenium, tellurium and other elements are changed, alloy fluidity is promoted, dispersed distribution of lead and the like is promoted to be more uniform, the cutting performance is further improved, in addition, dissolution of lead can be inhibited through the passive film layer, the environment-friendly performance is improved, and harm caused by dissolution of lead is reduced.

The invention belongs to the technical field of semiconductor materials and devices, and discloses a low-temperature thermal evaporation deposition tellurium / germanium heterojunction photoelectric detector and a preparation method thereof. The photoelectric detector comprises a germanium substrate, a tellurium thin film, a metal top electrode and a metal bottom electrode, the tellurium thin film is a polycrystalline tellurium film layer containing a micron-sized large domain, the surface roughness is lower than 1nm, and the tellurium thin film is in close contact with the germanium substrate to form a heterojunction; the metal top electrode is a platinum / gold laminated electrode, and the metal bottom electrode is an indium gallium alloy / copper foil electrode. The tellurium thin film with large crystal domain and low roughness grows on the germanium substrate through a-low temperature (-80 DEG C to-160 DEG C) thermal evaporation deposition process, and the electrode is prepared by combining a micro-nano processing technology. Compared with traditional molecular beam epitaxy, pulse laser deposition and other methods, the method is low in process cost and compatible with the integrated circuit technology, and the obtained heterojunction photoelectric detector has the excellent rectification characteristic and infrared light response and is suitable for large-scale preparation and practical application.

The invention discloses tellurium-lead-lithium oxide glass powder for BC battery N-region conductive paste and a preparation method of the tellurium-lead-lithium oxide glass powder, and belongs to the field of photovoltaic silver paste. The glass powder is prepared from components with high contents of Pb, Te and Li as follows: aTeO2-bPbO-cLi2O-dBi2O3-eWO3-fZnO-gSiO2-hNa2O, and the glass powder is prepared from components with high contents of Pb, Te and Li; wherein a + b + c + d + e + f + g + h = 1, 0.2 lt; a < lt >; 0.1 1t, 0.4, 0.1 1t; blt; 0.1 1t, 0.4, 0.1 1t; clt; ct; 0.25, 0 lt; dlt; 0.1, 0 lt; lt, lt; 0.1, 0 lt; flt; 0.1, 0 lt; glt; 0.1, 0 lt; hlt; 0.05, a + b > 0.5, and the ratio of c to h is (3-10): 1. Through specific Pb, Te and Li content control and a specific Li / Na ratio, a strong corrosion effect on a poly layer of a battery piece is achieved, more silver ions dissolved in molten glass can be recrystallized on the surface of a silicon wafer, and thus good ohmic contact is achieved.

The invention discloses a method for cooperatively treating a lead-copper anode slime mixture through a noble lead furnace and a top-blown furnace, which comprises the following steps: mixing copper-lead anode slime according to a certain proportion, conveying the copper-lead anode slime into the noble lead furnace for melting, dividing the copper-lead anode slime into a reducing slag layer and a noble lead layer in a reducing atmosphere in the furnace, conveying the slag material into a slag converter through a chute, precious lead is conveyed into the top-blowing silver separating furnace through a chute to be oxidized and refined, and reducing slag is subjected to slag material secondary sedimentation in the slag converter. Later-stage slag, tellurium slag, alloy cleaning slag and crude silver are produced through deep oxidation refining, the later-stage slag returns to a bismuth system for treatment, the tellurium slag returns to a tellurium system for treatment, the alloy cleaning slag returns to a refining furnace for treatment, and the crude silver returns to gold, silver, platinum and palladium for treatment. The bottom blowing smelting furnace, the antimony production system and the bismuth production system are organically combined for cooperative treatment, liquid lead slag material chute stepped closed conveying is achieved in the production process, the production period can be shortened, the metal amount occupation pressure is reduced, the gold and silver direct recovery rate is increased, the working environment is improved, the labor intensity is reduced, and the production cost is reduced.

The invention relates to a preparation method of a platinum-doped hollow gold nanorod with high photo-thermal stability. The invention belongs to the technical field of nano material preparation. The preparation method comprises the following steps: adding a tellurium precursor substance and a selenium precursor substance into a hydrazine hydrate-containing solution, continuously magnetically stirring, and diluting by using an aqueous solution of lauryl sodium sulfate after the reaction is completed, so as to obtain the tellurium-selenium nanorod; and dispersing the prepared tellurium-selenium nanorod in pure water, adding a gold precursor, a platinum precursor and a modifier at the same time, and then performing centrifugal separation to obtain the platinum-doped hollow gold nanorod. The thermal stability of the hollow gold nanorod is effectively improved through platinum doping, and when the platinum doping proportion is 10% or above, the light and heat stability of the hollow gold nanorod is obviously improved; the positive significance is realized on the full play of the effect of the material in photo-thermal therapy and related combined therapy application.

The invention discloses a preparation method of an N-type bismuth telluride-based thermoelectric thin film. The preparation method comprises the following steps: obtaining a bismuth raw material, a tellurium raw material and a selenium raw material; the preparation method comprises the following steps: smelting, grinding and sintering a bismuth raw material, a tellurium raw material and a selenium raw material to obtain an N-type bismuth-tellurium-selenium-based block target material; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through magnetron sputtering equipment, so that a bismuth-tellurium-selenium-based thin film is obtained; the N-type bismuth-tellurium-selenium-based block target material is deposited on a substrate through high-vacuum thermal evaporation equipment, so that a homogeneous-layer bismuth-tellurium-selenium-based thin film is obtained; according to the preparation method, the homogeneous layer bismuth-tellurium-selenium-based thin film is subjected to annealing treatment to obtain the N-type bismuth telluride-based thermoelectric thin film, and due to the fact that the method for preparing the bismuth-tellurium-selenium-based thin film through magnetron sputtering equipment and the method for preparing the bismuth-tellurium-selenium-based thin film through high-vacuum thermal evaporation equipment are combined, the high-performance N-type bismuth telluride-based thermoelectric thin film is obtained.

The utility model belongs to the technical field of nonferrous metallurgy, and particularly relates to a slag salvaging device special for a tellurium and copper removal pot, which comprises a digging spoon and a telescopic rod, the digging spoon is fixedly connected with the telescopic rod, the digging spoon comprises a spoon head and a spoon handle, one side of the spoon head is fixedly connected with the spoon handle, one side of the spoon head, opposite to the spoon handle, is provided with digging teeth, and the telescopic rod is fixedly connected with the digging teeth. A bushing structure is arranged at the bottom of the spoon head and comprises a first bushing and a second bushing, the second bushing is horizontally arranged, an obtuse angle is formed between the first bushing and the second bushing, the digging teeth are correspondingly arranged above the first bushing, a worker pulls tellurium slag and copper slag in a boiler through the digging teeth, and the tellurium slag and the copper slag are gathered and then fished out. The first leakage plate and the second leakage plate which are arranged at the bottom of the spoon head are used for filtering tellurium slag and copper slag liquid, the first leakage plate is fixed through screws, the second leakage plate is fixed in an inserted connection mode, replacement is convenient, and the first telescopic rod and the second telescopic rod are fixed through the fixing assembly in a threaded connection mode.

The invention discloses a method for recovering valuable metals from copper anode slime step by step, and belongs to the technical field of metallurgy and chemical industry. According to the method, through control over the oxidation-reduction potential, the oxidation-reduction potential is high in the leaching stage, and it is guaranteed that gold, selenium, tellurium and the like can be oxidized to enter a leaching solution; in the reduction stage, gold, selenium and tellurium products are reduced step by step according to the difference of gold, selenium and tellurium in reduction potentials; in the leaching stage, soluble chlorine salt is added while enough oxidation potential is guaranteed, enough chloride ions are provided for the solution, and therefore gold can enter the solution in the form of AuCl4-(tetrachloroauric acid); meanwhile, in the oxidation leaching stage, a small amount of silver enters the solution in the form of silver sulfate or silver complex, and under the condition that enough chloride ions are provided, silver is precipitated and retained in residues in the form of silver chloride, so that separation of gold and silver is achieved, and meanwhile dispersion of gold and silver in the leaching process is reduced. According to the method, valuable metal is efficiently separated and recycled.

The invention discloses a high-heat-resistance tellurium-copper alloy strip and a preparation process thereof, and relates to the technical field of tellurium-copper alloys. The method comprises the steps that 1, electrolytic copper, pure tellurium, pure selenium and a copper-cerium intermediate alloy are mixed, smelted and subjected to semi-continuous casting; obtaining a basic casting; and 2, the basic casting is sequentially subjected to homogenizing annealing, hot rolling, solution annealing, aging treatment, secondary rolling and stress relief annealing, and the high-heat-resistance tellurium-copper alloy strip is obtained. The high-heat-resistance tellurium-copper alloy strip comprises the following components: 0.1 wt%-0.5 wt% of tellurium, 0.01 wt%-0.03 wt% of cerium, 0.05 wt%-0.15 wt% of selenium, less than 0.3 wt% of impurities and the balance of copper. Through regulation and control of selenium and cerium, mechanical properties and high-temperature stability are synergistically improved; and through surface laser cladding of the enhancement layer, on the basis of ensuring the conductivity, the high temperature resistance is further improved, and reliable guarantee is provided for application of the alloy strip in a high-temperature complex environment.

The application belongs to the technical field of metallurgy, and relates to a method for efficiently purifying and directionally removing oxygen and impurities from a precious antimony alloy, which comprises the following steps: S1, after the precious antimony alloy is melted, an arsenic-tellurium removal agent is added, and smelting is performed at 600-610 DEG C to obtain a pre-impurity removal alloy melt and an arsenic-tellurium residue; the arsenic-tellurium removal agent is a mixture of sodium hydroxide and sodium nitrate; S2, the pre-impurity removal alloy melt obtained in step S1 is heated to 620-640 DEG C, a reducing agent is added, and smelting is performed to obtain an arsenic alkali residue and a refined antimony alloy; the reducing agent is a mixture of antimony sulfide and sodium hydroxide; S3, the arsenic-tellurium residue obtained in step S1 and the arsenic alkali residue obtained in step S2 are ball milled, leaching and filtration are performed to obtain a filtrate and a filter residue; S4, the filtrate obtained in step S3 is mixed with sulfuric acid, and after reaction, a neutralization residue and a neutralization liquid are obtained. By introducing the efficient arsenic-tellurium removal agent and the reducing agent, the content of antimony in the arsenic alkali residue is significantly reduced, and the direct recovery rate of antimony and the recovery rate of tellurium are effectively improved.

An embodiment relates to a single element phase change optical structure containing tellurium and a use thereof, and the structure is capable of overcoming a problem of defects of compound-based materials, improving durability, and maximizing optical modulation properties as well by replacing an existing compound-based optical phase change material with a tellurium (Te) single element. The embodiment is capable of maximizing an active color modulation effect by simultaneously using properties of thickness change and phase change of the tellurium (Te), and is also capable of achieving different optical properties by including various shapes of tellurium nanostructures.

The invention relates to a preparation method of a tellurium-cadmium-mercury double-layer component heterostructure. The preparation method comprises the following steps: forming a doped region on the surface of a tellurium-cadmium-mercury material through ion implantation; impurity distribution is adjusted through impurity distribution regulation and control annealing; growing a cadmium telluride film on the surface of the mercury cadmium telluride; performing diffusion annealing to cause mutual diffusion between cadmium telluride and mercury cadmium telluride, and removing the cadmium telluride film to form a mercury cadmium telluride material with a double-layer component heterostructure; the preparation difficulty of the HgCdTe double-layer component heterostructure is reduced, a good passivation structure can be formed on the HgCdTe surface, the matching of the component heterostructure and the PN junction relative position is easy to realize, and the dark current of the HgCdTe infrared detector is inhibited.

A hydrometallurgical process for recovering a plurality of metals from a complex rare and precious material, comprising the following steps: step 1: adding a complex rare and precious material to a hydrochloric acid solution, adding an oxidant for reaction, and then performing filtration to obtain a chlorination liquid and a chlorination residue; step 2: using two-stage counter-current gold loading to obtain a gold-loaded liquid and a post-loading liquid, reducing the gold-loaded liquid, performing clarification to obtain an organic phase, and filtering a precipitate to separate a post-reduction liquid and sponge gold; performing evaporation and concentration on the post-reduction liquid to produce a concentrate 1 and a condensate; and cooling and crystallizing the concentrate, performing filtration to obtain residual oxalic acid, and returning the residual oxalic acid to the reduction process and a post-crystallization liquid to gold loading; step 3: performing low-temperature distillation on the post-loading liquid to obtain a concentrate 2; step 4: performing high-temperature distillation on the concentrate 2 to obtain a concentrate 3; step 5: performing directional crystallization and centrifugal filtration on the concentrate 3 to obtain a crystallization residue and selenous acid; and step 6: washing the crystallization residue by using cold water or a low-acid-level condensate produced in step 3, and performing filtration to obtain a tellurium residue and a palladium-platinum-rhodium-rich liquid.

The invention belongs to the field of nanometer materials, and particularly discloses an ultrathin platinum-based hollow nanorod with the wall thickness smaller than 4 nm and a preparation method and application of the ultrathin platinum-based hollow nanorod. The preparation method comprises the following steps: adding a tellurium precursor and a selenium precursor into a solution containing a reducing agent, continuously magnetically stirring, and then carrying out solid-liquid separation to obtain the tellurium-selenium nanorod, then adding a hydrogen peroxide solution into an aqueous solution containing an intermediate product, carrying out a reaction for a preset time, carrying out solid-liquid separation after the reaction is finished so as to obtain a precipitate, and finally, preparing the ultrathin platinum alloy hollow nanorod. If other noble metal precursors are not added when the platinum precursor is added, the ultrathin platinum hollow nanorod can be obtained. The reaction rate of the noble metal precursor and the tellurium-selenium template is controlled mainly through ethylene glycol and polyvinylpyrrolidone, and the unreacted tellurium-selenium template is removed through hydrogen peroxide etching, so that the prepared ultrathin platinum-based hollow nanorod has the wall thickness smaller than 4 nm.

The invention discloses a method for stepwise dissolution of copper, selenium and tellurium in copper anode slime and enrichment of precious metals, the method comprises the steps of ball milling and drying, pressure leaching, oxygen pressure conversion and alkaline leaching, in the pressure leaching process, the oxygen partial pressure in a sulfuric acid solution with the concentration of 10-30 g / L is controlled to be 0.05-0.2 MPa at the temperature of 100-120 DEG C, NaCl and HCl are added in the oxygen pressure conversion to improve the Se recovery rate, and the alkaline leaching is carried out at the temperature of 100-120 DEG C; na2S is added in alkaline leaching, so that the tellurium recovery rate is remarkably improved, and the copper-selenium-tellurium leaching efficiency is high.

The invention discloses a purification method of high-purity tellurium, and belongs to the technical field of non-ferrous metallurgy. The method sequentially comprises the steps of raw material ultrasonic mechanical activation, ultrasonic selective recrystallization, smelting reduction refining, vacuum rectification purification and tellurium ingot forming, and volatile impurities such as selenium and sulfur are effectively removed by oxidizing calcination of a crude tellurium raw material; then, primary separation of impurities is realized in a manner of combining alkaline dissolution and oxidation precipitation, and then repeated purification is performed through low-temperature crystallization, so that the purity of tellurium is remarkably improved; metal impurities are further removed through smelting reduction treatment under the inert atmosphere, and preliminarily purified tellurium ingots are formed; step distillation separation is carried out by utilizing vapor pressure difference between tellurium and impurities under a high vacuum condition, and a pure tellurium component is enriched; and finally, melting in an inert atmosphere, cooling and forming to obtain the high-purity tellurium ingot. The method is stable in technological process, suitable for industrial application and capable of meeting the requirements of high-end fields such as semiconductors and photoelectric materials for high-purity tellurium materials.