1147 results about "Tellurium" patented technology

The invention belongs to the technical field of battery positive electrode materials, and discloses a tellurium and niobium doped and carbon nitride coated positive electrode material and a preparation method thereof, the chemical formula is LiNi < x > Co < y > Mn < 1-x-y-u-v > Te Nb < v > O < 2 > at C < 3 > N < 4 >, x is greater than or equal to 0.5 and less than or equal to 0.98, 0 lt; yt; Yt; 0, 0.5, 0 lt; u < = 0.1, 0lt; v < = 0.1, 1-x-y-u-vgt; 0. A Te / Nb co-doping mode is adopted, and Te and Nb are synergistically modified, so that the crystal structure of the material is stabilized, and good mechanical stability and cycle performance of the material are kept; lithium ions migrated on the surface of the positive electrode material and carbonate on the surface of the material are inhibited from forming lithium carbonate, so that the technical problem of battery gas expansion is solved; the carbon nitride coating provides additional transmission channels and adsorption sites for lithium ions, reduces the interface resistance at the same time, contributes to faster migration of the lithium ions under a low-temperature condition, and improves the first coulombic efficiency, the rate and the cycle performance of the battery at a low temperature.

The invention discloses a nonlinear Hall terahertz rectifying device which comprises a substrate, an oxide layer, an absorption layer and an electrode from bottom to top. The substrate is made of intrinsic high-resistance silicon, the oxide layer is made of silicon dioxide, the absorption layer is a Weel semimetal film, and the electrode is a four-end metal electrode. The Weel semimetal thin film is a niobium iridium tellurium (NbIrTe4) thin film. A cross-shaped structure is etched on the niobium-iridium-tellurium thin film, and a four-end metal electrode is manufactured through electron beam exposure, electron beam evaporation and a stripping technology. According to the invention, a simple cross-shaped geometric structure on Weel semimetal is utilized to couple an oscillating terahertz light field radiated along the longitudinal direction, and the generation of a direct current electric signal at the transverse end is realized through a nonlinear Hall effect induced by the Bell curvature, and the process does not involve the help of any external field. According to the invention, the broadband terahertz response of 0.02-0.82 THz is realized, the power consumption is low, and integration is facilitated.

The invention relates to a magnetic field sensor based on a room-temperature two-dimensional magnetic semiconductor material and a preparation method and application thereof, and the preparation method comprises the steps: arranging two electrodes which are not communicated with each other on an insulating substrate, obtaining a layered iron gallium tellurium material, transferring the layered iron gallium tellurium material to the insulating substrate, enabling at least one layered iron gallium tellurium material to be separated from the insulating substrate, and enabling the layered iron gallium tellurium material to be separated from the insulating substrate. The first product covers the two electrodes at the same time, tetrabutylammonium cations or oxygen plasmas are used for carrying out an intercalation reaction on the layered iron gallium tellurium material of the first product, and the layered iron gallium tellurium material of the first product is converted into an intercalated layered iron gallium tellurium material; and performing vacuum annealing to obtain the magnetic field sensor. The sensor provided by the invention reflects the magnetic field intensity by using the polarized light current between the electrodes, and can realize wide-range and high-precision magnetic field detection.

The invention discloses a terahertz modulator based on an aluminum and germanium-antimony-tellurium composite dumbbell hole array. The terahertz modulator comprises a substrate and the aluminum and germanium-antimony-tellurium composite dumbbell hole array formed on the surface of the substrate. The aluminum and germanium-antimony-tellurium composite dumbbell hole array is characterized in that a plurality of periodically arranged dumbbell holes are etched in an aluminum thin film, and a layer of germanium-antimony-tellurium thin film covers the aluminum dumbbell hole array; a structural unit of the aluminum dumbbell hole array is composed of two round holes with the same radius and a rectangular hole, the rectangular hole is connected with the two round holes, and the depth of the round holes, the depth of the rectangular hole and the thickness of the aluminum film are the same. The terahertz modulator can dynamically adjust the transmissivity of terahertz waves through germanium-antimony-tellurium phase change. According to the aluminum and germanium-antimony-tellurium composite dumbbell hole array disclosed by the invention, a modulator can be realized in a terahertz frequency band, and dynamic adjustment on the terahertz wave transmissivity is realized by utilizing the phase change characteristic of germanium-antimony-tellurium.

The invention discloses a free-cutting copper-nickel-tin-tellurium alloy and a preparation method thereof. The free-cutting copper-nickel-tin-tellurium alloy comprises the following components in percentage by weight: 5.5 to 15.5 percent of Ni, 4.5 to 8.5 percent of Sn, 0.1 to 0.6 percent of Te and the balance of Cu and inevitable impurities. According to the free-cutting copper-nickel-tin-tellurium alloy, Ni, Sn, Te and other elements are added into a copper matrix, precipitated phases containing a Cu2Te compound and the like are formed, the strength, hardness and abrasion resistance of the alloy are improved, meanwhile, the cutting performance of the alloy can be remarkably improved through addition of the Te element, the cutting performance of the alloy is remarkably improved, on the basis, the tensile strength of the alloy is 500 MPa or above, and the tensile strength of the alloy can be greatly improved. The hardness is 170 HV or more, and the cutting performance is 80% or more of that of C17300. The free-cutting copper-nickel-tin-tellurium alloy is free of beryllium and lead, excellent in performance, environmentally friendly and capable of meeting the application requirements of the test probe industry.

The invention belongs to the technical field of target material preparation, and discloses a preparation method of a selenium-germanium-antimony-tellurium-doped phase change target material, which comprises the following steps: mixing selenium powder and germanium-antimony-tellurium alloy powder, homogenizing to obtain powder A, carrying out primary sintering on the powder A to obtain an intermediate alloy, crushing and sieving the intermediate alloy to obtain powder B, and finally carrying out secondary sintering on the powder B to obtain the selenium-germanium-antimony-tellurium-doped phase change target material. The secondary sintering is hot pressing sintering, the hot pressing sintering sequentially comprises a first stage, a second stage, a third stage and a fourth stage, the first stage is a pre-pressing stage, the second stage is a first heating and non-pressurization stage, the third stage is a second heating and non-pressurization stage, pressurization is started after the third stage is completed, and the fourth stage is a second heating and non-pressurization stage. By means of the design, the selenium-germanium-antimony-tellurium doped target material has the good density and the good component distribution uniformity degree at the same time, and in addition, the invention further discloses the selenium-germanium-antimony-tellurium doped phase change target material.

The invention discloses a sulfur-doped molybdenum ditelluride nanosheet as well as a preparation method and application thereof, and belongs to the technical field of nano materials and components. The preparation method comprises the steps that a catalyst and a molybdenum source are mixed and placed in an ark, then a substrate is placed above the ark, and a pretreated molybdenum source is obtained; a tellurium source is also placed in the ark, then the tellurium source and the pretreated molybdenum source are placed in the double-temperature-zone tubular furnace, the tellurium source is placed on the upstream, the pretreated molybdenum source is placed on the downstream, a growth reaction is carried out, heat preservation is carried out, and molybdenum ditelluride nanosheets are obtained; and soaking the molybdenum ditelluride nanosheet in an ammonium sulfide solution, taking out the molybdenum ditelluride nanosheet, washing with water, and drying to obtain the molybdenum ditelluride nanosheet. The invention also discloses the sulfur-doped molybdenum ditelluride nanosheet and an application of the sulfur-doped molybdenum ditelluride nanosheet in preparation of a memristor device. The molybdenum ditelluride nanosheet generated by ammonium sulfide etching chemical vapor deposition realizes simple sulfur doping treatment of molybdenum ditelluride, the sulfur-doped modified molybdenum ditelluride can be used for preparing memristor devices, a foundation is laid for subsequent neuromorphic application, and the application prospect is good.

The invention relates to the technical field of heat insulation materials, and particularly discloses a nano-composite reflective heat insulation plate and a preparation process thereof. The nanometer composite reflective insulation board is formed by gluing and overlapping aluminum foil, a composite aerogel insulation board, inorganic gridding cloth, another composite aerogel insulation board and another inorganic gridding cloth in sequence. The composite aerogel heat insulation plate is prepared from the following raw materials in parts by mass: 50-55 parts of silicon dioxide nano aerogel powder, 1.5-2.5 parts of a composite heat insulation agent, 2-3 parts of Kevlar chopped fibers, 2-2.5 parts of phenolic aldehyde emulsion and 1 part of a silane coupling agent. The preparation method of the composite heat insulating agent comprises the following steps: firstly, constructing a wrinkled GO template, obtaining a tellurium-doped Mg2Si wrinkled sheet material through the wrinkled GO template, and finally obtaining the composite heat insulating agent through slurry dipping and heat treatment. The prepared nano-composite reflective heat insulation plate is applied to a ladle furnace body, and the infrared radiation blocking capacity and the heat preservation and heat insulation effect of the ladle furnace body can be remarkably enhanced.

The invention provides a preparation method of a MoTe2 single crystal. The preparation method comprises the following steps: A, weighing molybdenum powder, tellurium powder and cobalt powder according to a stoichiometric ratio; b, the powder weighed in the step A is poured into a glass beaker, convective mixing is achieved under the action of a stirrer, and the duration time is 20-30 minutes; c, pouring the powder ground in the step B into a crucible, and sealing; d, putting the crucible in the step C into a glass tube; e, covering the glass tube in the step D with a glass cap; f, vacuumizing the glass tube by using a vacuum pump set, then filling argon, repeating the gas washing process for three times, and then vacuumizing again; g, aligning the middle position of the glass cap, heating to melt the tube wall of the glass tube and the glass cap together, and completing vacuum sealing; and H, putting the glass tube in the step G into a box-type furnace, sintering, taking out, putting into a water bucket, and quenching to obtain a single crystal sample.

The invention discloses a method for controlling the surface shape of a cadmium zinc telluride wafer. The method comprises the following steps: firstly, determining the universal change condition of the thickness and the surface shape of a damaged layer of the cadmium zinc telluride wafer along with a grinding and polishing process under an actual process condition; in combination with an analysis result, before each time of surface treatment of the tellurium-zinc-cadmium wafer, removing damaged layers on the two surfaces of the tellurium-zinc-cadmium wafer through a chemical corrosion method; and meanwhile, the surface shape of the wafer is measured before chemical polishing, and chemical polishing is carried out by adopting different process parameters according to the surface shape condition. A chemical corrosion solution in the process of removing the stress of the damaged layer through chemical corrosion is a corrosion solution with a specific concentration, and the chemical corrosion time is determined by the required removal thickness. A chemical polishing solution in the chemical polishing process is an etchant solution with a specific concentration, the chemical polishing time is determined by a surface shape value of a wafer measured before chemical polishing, and a chemical polishing carrier is a specially designed carrier. The method is simple in process, good in repeatability and controllable in process, can be used for surface shape control of the cadmium zinc telluride substrate, and has batch capacity.

Sensors containing one or more metal oxides as the sensor material are used for detecting pathogen-derived VOCs, e.g., VOCs emitting from infectious wounds. The metal oxides may contain one or more metal elements selected from aluminum, antimony, bismuth, boron, cerium, chromium, cobalt, copper, gold, indium, iridium, iron, lanthanum, lead, manganese, molybdenum, nickel, niobium, osmium, palladium, platinum, rhodium, ruthenium, selenium, silicon, silver, tantalum, tellurium, terbium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium. A sensor device may have one or more sensors, which detects and records a variety of VOCs that are indicative of existence of pathogens, and the pathogens are associated with dieses and / or infections.

The invention provides an epitaxial wafer of a high-luminous-efficiency infrared light-emitting diode and a manufacturing method of the epitaxial wafer. The epitaxial wafer comprises a GaAs substrate, an N-type semiconductor structure, a quantum well active region and a P-type semiconductor structure, wherein the N-type semiconductor structure, the quantum well active region and the P-type semiconductor structure are formed on the substrate. The N-type semiconductor structure comprises an N-type AlGaAs stacking layer, diethyl tellurium (DETe) and disilane (Si2H6) are adopted for co-doping, the N-type semiconductor structure is designed to be of a superlattice structure, and the doping concentration in the vertical direction is periodically alternated from high to low; and a doping concentration gradient is arranged at a position close to the quantum well region, so that the tellurium doping concentration is gradually increased. Through the design, the content of carbon impurities in the material and the non-radiative recombination probability are reduced, a better current expansion effect and quantum well stress release are achieved, and the luminous efficiency and performance of an infrared LED are greatly improved.

A sensor comprising one or more metal oxides as sensor material is used to detect pathogen-derived VOCs, such as those released from an infected wound. The metal oxides can comprise one or more metal elements selected from aluminum, antimony, bismuth, boron, cerium, chromium, cobalt, copper, gold, indium, iridium, iron, lanthanum, lead, manganese, molybdenum, nickel, niobium, osmium, palladium, platinum, rhodium, ruthenium, selenium, silicon, silver, tantalum, tellurium, terbium, tin, titanium, tungsten, vanadium, ytterbium, yttrium, zinc, and zirconium. The sensor device can have one or more sensors that detect and record various VOCs indicative of the presence of pathogens, which are associated with mortality and / or infection.

The invention discloses a method for reducing the grade of lead in crude bismuth. The method comprises the following steps: 1) melting the crude bismuth; 2) oxidizing and refining to remove arsenic and antimony; 3) adding alkali to remove tellurium; and 4) removing lead by using quartz sand, namely controlling the temperature of the bismuth pot to be 350-400 DEG C, introducing compressed air, positively and negatively stirring for 8-9 hours in different directions by using a stirrer, adding the quartz sand while stirring to enable the generated lead silicate to float on the surface, and removing slag manually to obtain the lead-removed bismuth. According to the method, no waste gas is produced in the lead removal process, the field operation environment is friendly, the energy consumption is greatly reduced, and the lead removal cost is greatly reduced; according to the method, quartz sand is adopted to remove lead, and a proper reaction temperature is matched, so that not only can the formation of lead silicate be effectively promoted, but also the formation of bismuth silicate can be effectively inhibited, further the lead removal effect can be effectively improved, the lead grade is reduced, and the bismuth grade is improved; the quartz sand is not easy to decompose in the reaction process, the utilization rate of the quartz sand is high, the cost of removing lead from crude bismuth is reduced, and the method is suitable for large-scale production.

The invention relates to the technical field of photoelectric materials, in particular to application of a Van der Waals tellurium nano material as a near-infrared IIa light nerve regulation material. The invention provides an application of a Van der Waals Te nanometer material as a near-infrared IIa light nerve regulation material, and a preparation method of the Van der Waals Te nanometer material comprises the following steps: taking selenium telluride as a raw material, carrying out chemical vapor deposition on the surface of a substrate, adjusting the temperature of the substrate to 200-400 DEG C, and carrying out heat preservation for 2-4 hours, so as to obtain the Van der Waals Te nanometer material. The Van der Waals tellurium nanometer material is obtained; the chemical vapor deposition is carried out under the condition of introducing nitrogen. The Van der Waals tellurium nano material has a wide spectrum (from visible light to near-infrared light) for optical nerve regulation, the wave band can reach the near-infrared IIa (1.3-1.4 microns) wave band, and under the irradiation of 1.31 microns of light of the near-infrared IIa, mouse cortical nerve cells can be successfully induced to generate action potential.

The invention relates to the technical field of photoelectric materials and devices, in particular to a van der Waals tellurium nanometer material with bulk photovoltaic response, a preparation method and application of the nanometer material, a photoelectric device and a preparation method of the photoelectric device. The invention provides a preparation method of a Van der Waals tellurium nanometer material, which comprises the following steps: by taking selenium telluride as a raw material, carrying out chemical vapor deposition on the surface of a substrate to obtain the Van der Waals tellurium nanometer material, the chemical vapor deposition is carried out under the condition of introducing nitrogen. The van der Waals tellurium nanometer material prepared by the preparation method can enable the bulk photovoltaic response of a photoelectric device to have a wide spectrum band and high photocurrent density.

The invention relates to a method for growing multi-layer and single-layer tungsten telluride films by a normal-pressure chemical vapor deposition method. According to the method, tellurium powder and tungsten trioxide serve as precursors, potassium bromide is added to serve as an auxiliary growth agent, tungsten trioxide generates a precursor with higher volatility under the action of potassium bromide, and the problem that the temperature needed by tungsten trioxide is high is solved; the preparation method comprises the following steps: preparing a tellurium source and a tungsten source, respectively controlling the growth temperature and time of the tellurium source and the tungsten source through a double-temperature-zone tubular furnace, taking a Si / SiO2 substrate and hydrogen-argon mixed gas as carrier gas, and adjusting the distance between precursors, the growth temperature, the proportion of the precursors and the like to realize controllable preparation of the thickness and the shape of the tungsten ditelluride film. The tungsten telluride thin film grown by the method has excellent uniformity and larger size, the maximum size of a single layer can reach 0.01 cm < 2 >, and the method has an important positive effect on subsequent basic physical property research and preparation of high-performance electronic devices.

The invention discloses a comprehensive treatment method of platinum and palladium slag, and relates to the technical field of non-ferrous metal metallurgy. After the platinum and palladium slag is subjected to sulfating roasting, flue gas is introduced into a selenium absorption tower; hydrolyzing the roasting slag, reducing the dissolving solution to recover tellurium, and enabling the dissolving solution to enter a copper recovery process after tellurium precipitation; the dissolving slag is subjected to chlorination dissolution gold separation, and the gold separation slag is subjected to silver recovery; the gold separation liquid is reduced to obtain gold powder; carrying out platinum and palladium precipitation on the gold reduced solution, adding ammonia water into platinum and palladium precipitation to carry out platinum and palladium separation, respectively refining the separated platinum and palladium, and recovering platinum and palladium; carrying out platinum-palladium reduction on the platinum-palladium precipitation post-solution to obtain platinum-palladium precipitation slag and a platinum-palladium reduction post-solution, and returning the platinum-palladium precipitation slag to the roasting process; and performing tellurium reduction on the platinum-palladium reduced liquid to obtain tellurium powder and tellurium reduced liquid, and enabling the tellurium reduced liquid to enter a wastewater treatment process. The method has the beneficial effects that selenium, tellurium, copper, gold, silver, platinum and palladium are separated and recycled step by step, the recycling rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.

The invention particularly relates to a sulfur-loaded carbon microsphere with a hierarchical pore structure as well as a preparation method and application of the sulfur-loaded carbon microsphere. The invention provides a NiX (X = Se, Te) selenium and tellurium porous carbon microsphere sulfur-loaded positive electrode material prepared based on a spray drying technology. According to the material, gamma-cyclodextrin is used as a carbon source, NaCl is used as a template, and three-dimensional porous carbon microspheres with the particle size of 10-20 microns are formed through a spray drying method. Then, the carbonized particles are activated by KOH, and rich micropores are introduced on the basis of an original macroporous structure; and finally, loading sulfur into the porous carbon structure through a melt permeation method to prepare the sulfur composite positive electrode material suitable for the room-temperature sodium-sulfur battery. The three-dimensional porous carbon skeleton of the material can effectively buffer the volume change of sulfur in the sodium ion intercalation / deintercalation process, the electronic conductivity of an electrode is also remarkably improved, and the construction of a room-temperature sodium-sulfur battery positive electrode material with high specific capacity and high stability is facilitated.

A memory device having: a three-dimensional array of nodes configured on a semiconductive substrate. Each respective node in the array has a selector transistor; and a memory cell include: a first layer of conductive material configured as a first electrode terminal, the first electrode terminal connected to the selector transistor; a second layer of conductive material configured as a second electrode terminal; and a layer of a chalcogenide alloy sandwiched between the first electrode terminal and the second electrode terminal. The chalcogenide alloy includes a ternary Indium-Arsenic-Selenium material or a ternary Indium-Arsenic-Tellurium material, deposited using a technique of atomic layer deposition.

A method for producing a semiconductor nanoparticle, a semiconductor nanoparticle, an electroluminescent device including the semiconductor nanoparticle, and a display device. In an embodiment, the method of an embodiment includes preparing a first semiconductor nanocrystal including zinc, tellurium, and selenium, wherein the preparing of the first semiconductor nanocrystal includes heating a first solution including a first zinc precursor, a first selenium precursor and a tellurium precursor in a first organic solvent at a reaction temperature to form a heated solution; and adding an additive to the heated first solution to produce the first semiconductor nanocrystal, wherein the additive includes a second selenium precursor and the additive does not include tellurium, and the semiconductor nanoparticle is configured to emit blue light.

The present invention discloses a tellurium-lead-lithium oxide glass powder for BC cell N-region conductive paste and its preparation method, belonging to the field of photovoltaic silver paste. The glass powder adopts components with high Pb, Te, and Li: aTeO2 - bPbO - cLi2O - dBi2O3 - eWO3 - fZnO - gSiO2 - hNa2O; where a + b + c + d + e + f + g + h = 1, 0.2 < a < 0.4, 0.1 < b < 0.4, 0.1 < c < 0.25, 0 < d < 0.1, 0 < e < 0.1, 0 < f < 0.1, 0 < g < 0.1, 0 < h < 0.05, and a + b > 0.5, and the ratio of c to h is (3 - 10):1. By controlling the specific Pb, Te, and Li contents and the specific Li / Na ratio in the present invention, a strong corrosion effect on the poly layer of the cell is achieved, enabling more silver ions dissolved in the glass liquid to recrystallize on the surface of the silicon wafer, thereby achieving good ohmic contact.

The invention discloses a multi-scale research method for improving the separation efficiency of impurities in an ultra-pure metal system. The multi-scale research method comprises the following steps that tellurium crystals are prepared through a zone melting method, and purity and crystal face orientation analysis is conducted; simulation analysis is carried out in combination with experimental data, firstly, phase field simulation is used for analyzing conversion of an interface structure and grain competition-driven orientation in the solidification process, then the density functional theory is used for calculating and analyzing adsorption energy of solid phases on different crystal faces at the solid-liquid interface to impurity atoms, and the structure-activity relationship between crystal face orientation and impurity separation efficiency is obtained. Finally, the crystal face and the preferred orientation degree of the tellurium crystal are regulated and controlled through a Bridgman method, and the impurity separation efficiency is improved. By means of the mode, the key factors influencing trace impurity atom separation can be obtained, the universal method for improving the impurity separation efficiency in the ultra-pure metal system is obtained, and development of the non-ferrous metal metallurgy field is promoted.

The invention discloses a substrate processing method for improving the imaging quality of an infrared focal plane hybrid chip, and belongs to the technical field of substrate processing. The infrared focal plane hybrid chip is prepared from an array chip and a silicon readout circuit through inverted interconnection of indium columns, an epitaxial layer, a substrate epitaxial interface and a substrate are sequentially arranged above the indium columns in the first direction, and the method comprises the following steps that S1, the substrate is thinned, and degumming and dewaxing treatment is carried out; s2, forming a protective layer on the electrode of the silicon readout circuit; s3, adhering the treated chip and the accompanying chip to a glass substrate, and removing the thinned substrate through chemical mechanical polishing treatment; and S4, removing the epitaxial layer with a set thickness close to the epitaxial interface of the substrate by adopting chemical polishing treatment, and cleaning. The technical scheme has the beneficial effects that the tellurium-zinc-cadmium substrate is removed through chemical mechanical polishing, the loss rate is reduced, the problem of uneven corrosion is solved, the epitaxial material close to the epitaxial interface of the substrate is removed through chemical polishing, and the imaging quality is improved.

The invention relates to a terahertz transparent electrode based on a nickel tellurium compound and a preparation method and application thereof, and belongs to the technical field of terahertz electrodes. In order to solve the problem that an existing terahertz transparent electrode cannot have high transmittance and good conductivity in the terahertz wave propagation direction at the same time, the invention provides a terahertz transparent electrode based on a nickel-tellurium compound, which comprises a substrate and a nickel-tellurium compound film. The nickel-tellurium compound films with different nickel-tellurium ratios are prepared by setting the target materials with different nickel-tellurium areas, so that the conductivity, transmittance and thickness of the terahertz transparent electrode are adjusted, and the relatively high transmittance and high conductivity of the terahertz wave band of the terahertz transparent electrode are balanced; the transmittance of the obtained terahertz transparent electrode based on the nickel tellurium compound in the terahertz wave band is higher than 80%, the conductivity is larger than 1000 S / cm, and the qualified standard of a transparent conductive film is met. The preparation method is low in requirement and suitable for practical batch production of the terahertz transparent electrode.

The invention discloses a tellurium / tin disulfide van der Waals heterojunction multifunctional device and a preparation method thereof. The tellurium / tin disulfide van der Waals heterojunction multifunctional device comprises a substrate, a Te nanowire prepared on the substrate, a SnS2 layer prepared on the substrate, and a drain electrode and a source electrode which are prepared on the substrate, the drain electrode partially covers the Te nanowire, and the source electrode partially covers the SnS2 layer; the SnS2 layer partially covers the Te nanowire; the part, covering the Te nanowire, of the drain electrode is far away from the part, covering the Te nanowire, of the SnS2 layer, and the part, covering the SnS2 layer, of the source electrode is far away from the part, covering the Te nanowire, of the SnS2 layer. According to the tellurium / tin disulfide Van der Waals heterojunction multifunctional device provided by the invention, the Van der Waals heterojunction is constructed by using tellurium nanowires prepared by a PVD (Physical Van Deposition) method and mechanically stripped tin disulfide nanosheets, so that a multifunctional photoelectric device integrating photoelectric detection, photoelectric storage, photoelectric logic and photoelectric synapse is realized; and a feasible scheme is provided for solving the current situation that a single photoelectric device cannot realize multiple functions in the prior art.

A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

The invention discloses a method for growing tellurium-indium-lead single crystals with low optical absorption and high uniformity by reducing gravity influence, and relates to a growth method of tellurium-indium-lead single crystals. The method aims at solving the problems that according to an existing PIT crystal growth method, crystal cracking is serious, optical absorption is high, and elements in crystals are not evenly distributed. The method comprises the following steps: putting a Pb source, an In source, a Te source and extra In2Te3 into a cylindrical crucible, adding elemental Te into a quartz tube, and melting and sealing; putting the quartz tube into an inclined single-temperature-zone tubular furnace for reaction to obtain PIT polycrystals, then putting the polycrystals into a pyrolytic boron nitride crucible with a seed crystal trap, putting the pyrolytic boron nitride crucible into the quartz tube, and performing vacuum sealing; and performing single crystal growth in a multi-temperature-zone horizontal crystal growth furnace to obtain the PIT single crystal. The transmittance of the cut double-sided polished wafer with the thickness of 6 mm is close to 60% within the wave band of 2-3 microns, the optical absorption at the position of 2.09 microns is smaller than 0.11 cm <-1 >, and the double-sided polished wafer can be applied to the fields of industry, medical treatment and energy.

The invention relates to a method for recovering tellurium from copper anode slime through cooperation of ultrasound and hydrogen peroxide, and belongs to the field of wet metallurgy of scattered metal. The method comprises the following steps: drying and grinding copper anode slime to obtain copper anode slime powder; the method comprises the following steps: adding copper anode slime powder into a sulfuric acid solution, mixing to obtain copper anode slime slurry, adding hydrogen peroxide into the copper anode slime slurry, carrying out ultrasonic enhanced leaching for 20-160min, and carrying out solid-liquid separation to obtain a leaching solution containing copper and tellurium and high-grade valuable metal leaching residues. According to the method, hydrogen peroxide is effectively promoted to be decomposed by ultrasound to generate hydroxyl radicals, the oxidation potential of a system is regulated and controlled, copper and tellurium are selectively converted into copper ions, tellurate radicals enter a solution, and valuable elements such as gold, silver and selenium are enriched in slag; necessary heat is provided for the reaction by utilizing the heat effect of ultrasonic and heat released by chemical reaction, and extra heating is not needed; strong jet flow generated by ultrasound effectively destroys raw material inclusion and secondary wrapping, reaction mass transfer is enhanced, and the leaching rate of tellurium is increased. The method disclosed by the invention is simple in leaching process operation, low in cost and high in reaction speed.

The invention belongs to the technical field of preparation of high-performance thermoelectric materials, and particularly relates to a method for preparing a GeTe-based thermoelectric material by eliminating Ge enrichment through a chemical reaction. In order to further excavate the application potential of the GeTe material, the invention provides a high-performance GeTe-based thermoelectric material, the molecular formula of the high-performance GeTe-based thermoelectric material is (GeTe) 1-x (BiSbSe) x, and x is 0.03, 0.04, 0.05 or 0.06. The thermoelectric material is prepared by taking germanium particles, tellurium particles, bismuth particles, antimony particles and selenium particles as raw materials, respectively preparing GeTe and BiSbSe3 through a melting method, mixing, carrying out high-energy ball milling treatment, and carrying out spark plasma sintering to form blocks. According to the preparation method, Ge enrichment is completely eliminated through BiSbSe3 alloying reaction, so that the thermoelectric performance and the service stability of the prepared GeTe-based thermoelectric material are effectively improved.