277 results about "Tellurium" patented technology

The present invention discloses a tellurium-lead-lithium oxide glass powder for BC cell N-region conductive paste and its preparation method, belonging to the field of photovoltaic silver paste. The glass powder adopts components with high Pb, Te, and Li: aTeO2 - bPbO - cLi2O - dBi2O3 - eWO3 - fZnO - gSiO2 - hNa2O; where a + b + c + d + e + f + g + h = 1, 0.2 < a < 0.4, 0.1 < b < 0.4, 0.1 < c < 0.25, 0 < d < 0.1, 0 < e < 0.1, 0 < f < 0.1, 0 < g < 0.1, 0 < h < 0.05, and a + b > 0.5, and the ratio of c to h is (3 - 10):1. By controlling the specific Pb, Te, and Li contents and the specific Li / Na ratio in the present invention, a strong corrosion effect on the poly layer of the cell is achieved, enabling more silver ions dissolved in the glass liquid to recrystallize on the surface of the silicon wafer, thereby achieving good ohmic contact.

The invention discloses a tellurium-doped sulfurized polyacrylonitrile potassium storage negative electrode material and a potassium ion total battery, and belongs to the field of potassium ion batteries. In order to solve the technical problems of low sulfur utilization rate and poor rate capability when sulfurized polyacrylonitrile is used as a potassium storage negative electrode material, the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN) material with high performance is synthesized in a tellurium doping manner. In the tellurium-doped sulfurized polyacrylonitrile (Te-SPAN), the content of tellurium is lower than 5%, the content of sulfur is 33%-39%, and the content of carbon is 59%-62%. When the Te-SPAN is used as a potassium storage negative electrode material, the Te-SPAN shows high potassium storage capacity, excellent rate capability and cycling stability. In addition, the potassium ion total battery assembled based on the composite negative electrode and the low-defect manganese potassium hexacyanoferrate positive electrode also shows very excellent electrochemical performance.

The invention discloses a tellurium-doped copper sulfide-based nano composite material with a core-shell structure as well as a preparation method and application thereof, and belongs to the technical field of zinc ion battery negative electrode materials. The method comprises the following steps: dissolving a copper source, a sulfur source, a carbon source and a tellurium source in a mixed solution of deionized water and ethylene glycol, uniformly stirring and mixing, carrying out hydrothermal reaction and centrifugal cleaning, collecting a precipitation product, and carrying out vacuum drying; and carrying out calcination reaction to obtain the tellurium-doped copper sulfide-based nano composite material with the core-shell structure. The inner-layer microspheres are microspheres formed by stacking tellurium-doped copper sulfide flower-shaped nanosheets; and the outer coating layer is a carbon layer. Through the synergistic effect of tellurium doping and carbon coating, the electron conduction and the structural stability of the material are effectively enhanced, and the cycle performance and the rate capability of the aqueous zinc ion battery are remarkably improved. As a negative electrode of the zinc ion battery, the material can effectively improve cyclic reversibility, has remarkable reversible capacity, improves the performance of the zinc ion battery, and is suitable for industrial production and large-scale energy storage.

A hydrometallurgical process for recovering a plurality of metals from a complex rare and precious material, comprising the following steps: step 1: adding a complex rare and precious material to a hydrochloric acid solution, adding an oxidant for reaction, and then performing filtration to obtain a chlorination liquid and a chlorination residue; step 2: using two-stage counter-current gold loading to obtain a gold-loaded liquid and a post-loading liquid, reducing the gold-loaded liquid, performing clarification to obtain an organic phase, and filtering a precipitate to separate a post-reduction liquid and sponge gold; performing evaporation and concentration on the post-reduction liquid to produce a concentrate 1 and a condensate; and cooling and crystallizing the concentrate, performing filtration to obtain residual oxalic acid, and returning the residual oxalic acid to the reduction process and a post-crystallization liquid to gold loading; step 3: performing low-temperature distillation on the post-loading liquid to obtain a concentrate 2; step 4: performing high-temperature distillation on the concentrate 2 to obtain a concentrate 3; step 5: performing directional crystallization and centrifugal filtration on the concentrate 3 to obtain a crystallization residue and selenous acid; and step 6: washing the crystallization residue by using cold water or a low-acid-level condensate produced in step 3, and performing filtration to obtain a tellurium residue and a palladium-platinum-rhodium-rich liquid.

The invention relates to a silicon-based tellurium-cadmium-mercury material, an infrared focal plane detector and a preparation method of the silicon-based tellurium-cadmium-mercury material. The silicon-based tellurium-cadmium-mercury material comprises a silicon substrate, a cadmium telluride buffer layer and a tellurium-cadmium-mercury layer, wherein the cadmium telluride buffer layer and the tellurium-cadmium-mercury layer grow on the front surface of the silicon substrate; the back surface of the silicon substrate is provided with an optical metasurface structure, and the optical metasurface structure is composed of microstructure units which are periodically arranged; the size of the maximum cross section of each microstructure unit ranges from 100 nm to 150 nm, the distance between the centers of the maximum cross sections of the adjacent microstructure units ranges from 800 nm to 1000 nm, and the size of each microstructure unit in the direction perpendicular to the surface of the silicon substrate ranges from 400 nm to 600 nm. Experimental results show that when incident light is vertically incident, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is greater than or equal to 90%; and when the incident angle of incident light is 0-30 degrees, the infrared transmittance of the material in a medium-wave infrared band of 3-5 microns is still greater than or equal to 90%.

The present invention relates to single-crystal spherical carbon nanoparticles that are single-crystals, are spherical, and have an average particle diameter of 1 nm to 30 nm. The single-crystal spherical carbon nanoparticles of the present invention can generate fluorescence with a high fluorescence quantum efficiency when excited by a light in wide wavelength range from ultraviolet light to visible light, and have fluorescence quantum efficiency of 10% or more compared to conventionally known carbon nanoparticles. The single-crystal spherical carbon nanoparticles can be used for drug delivery, because they do not have toxicities to living organisms that compound semiconductors made of cadmium, selenium, tellurium, and the like have. Furthermore, since the single-crystal spherical carbon nanoparticles are spherical, they can be densely packed as electrode materials for solar cells and secondary ion batteries, and can be used for negative electrode for lithium ion batteries or electrode material for solar cells.

The invention relates to the technical field of secondary battery detection, and provides a secondary battery in-situ detection device and method.The secondary battery in-situ detection device comprises an in-situ battery, a precise three-dimensional moving platform, a Fourier transform microscopic infrared spectrometer and an electrochemical workstation, and the in-situ battery comprises an upper cover, an optical window, a middle supporting body, a working electrode and other components; micro-area positioning is realized through the three-dimensional mobile platform, the synchronization system guarantees time sequence synchronization of spectrum and electrochemical data, a mercury-cadmium-tellurium detector of the spectrometer captures weak infrared signals, in-situ, dynamic and micro-area detection of interface reaction of the secondary battery is finally realized, and the detection accuracy and reliability are effectively improved.

The embodiment of the present application provides a kind of N-type IBC battery negative electrode grid silver paste, N-type IIBC battery and preparation method thereof, wherein, the N-type IBC battery negative electrode grid silver paste provided in the embodiment of the present application includes organic auxiliary agent, silver powder, organic binder and doped glass powder, and the doping element of the doped glass powder is antimony, tellurium and tungsten.By doping antimony, tellurium and tungsten elements in glass powder, antimony element is the same as phosphorus, and the doping of N area can be increased;And tellurium and tungsten have the effect of dissolving silver, which can reduce the contact resistivity of silver grid line, improve the fill factor, thereby improving the photoelectric conversion efficiency of battery;Thus, the problem that the existing N-type IBC battery cannot form n+ region, so that the photoelectric conversion efficiency of N-type IBC battery is not good.

Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal,wherein the nanostructures further include tellurium,wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1,wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.

The invention discloses a conductive aluminum bar and a preparation method thereof, and belongs to the technical field of metal conductors. The conductive aluminum bar sequentially comprises an aluminum core, a copper layer coaxially arranged outside the aluminum core, and a transition connecting layer arranged between the copper layer and the aluminum core from inside to outside, the copper-aluminum interface transition layer comprises the following chemical components: 20 to 22 weight percent of copper, 5 to 6 weight percent of silicon, 1 to 2 weight percent of nickel, 1 weight percent of magnesium, 0.02 to 0.06 weight percent of boron, 0.05 to 0.1 weight percent of tellurium and the balance of aluminum; when the conductive aluminum bar is prepared, the transition connecting layer and the copper layer are sequentially and coaxially arranged outside the aluminum core, then primary drawing, preheating, heating and heat preservation, hot rolling, drawing forming, annealing treatment and surface polishing are carried out, and the conductive aluminum bar is obtained. The conductive aluminum bar provided by the invention has good mechanical properties and conductivity.

This invention provides a 210 The purification method for Po includes: under vacuum, distilling irradiation of a thorium oxide target to generate distilled gas, condensing the distilled gas in a collecting pan to obtain a distillate; soaking the collecting pan in nitric acid solution to obtain a soaking solution, evaporating it to obtain a dried product, dissolving the dried product in hydrochloric acid solution to obtain a leachate; pouring the leachate into a chromatography column packed with chloride-form anion exchange resin, rinsing the chromatography column with hydrochloric acid solution, and draining the liquid; rinsing the chromatography column with hydrochloric acid solution to allow the chloride-form anion exchange resin to react with the thorium oxide. 210 Po separation yields a product containing... 210 The purified solution of Po was diluted to obtain a diluent. Tetravalent tellurium, a reducing agent, and isopropanol were added to the diluent to obtain a mixture. The mixture was filtered to obtain an α-measurement source, and the α-spectrum was obtained by measurement. The purification method of this embodiment utilizes a thorium oxide target obtained after irradiation. 210 The differences in physicochemical properties between Po and impurities enable... 210 Purification of Po.

The disclosure relates to compositions that include a catalyst and calcium carbonate. More specifically, a composition including calcium carbonate and a catalyst that includes molybdenum (Mo), vanadium (V), tellurium (Te), niobium (Nb), and oxygen (O).

The invention relates to the technical field of functional material preparation, in particular to a two-dimensional transition metal chalcogenide target material and a preparation method thereof. The method comprises the steps that high-purity tellurium and transition metal are mixed, the transition metal is high-purity tungsten or high-purity molybdenum, vacuum swing smelting is conducted at the temperature of 1100-1300 DEG C, and a cast ingot is obtained; crushing and ball-milling the cast ingot to obtain micron-sized powder: carrying out high-energy ball-milling on the micron-sized powder to obtain nano-sized powder; the nanoscale powder is subjected to heat treatment at the temperature of 150-160 DEG C, and nanopowder subjected to heat treatment is obtained; presintering the nano powder subjected to heat treatment at 300-400 DEG C, and then sintering at a high temperature of 500-750 DEG C and 20-40 MPa to obtain a target blank; and carrying out hot isostatic pressing treatment on the target blank under the conditions of 500-650 DEG C and 80-150 MPa. According to the preparation method provided by the invention, the high-quality alloy target material with high density, large size and uniform components can be obtained.

The application discloses a comprehensive treatment method of platinum-palladium slag and relates to the technical field of nonferrous metal smelting. After sulfuric acid roasting of the platinum-palladium slag, flue gas is introduced into a selenium absorption tower; the roasted slag is hydrolyzed, and tellurium is recovered by reduction of a dissolved solution; after the tellurium is precipitated, the dissolved solution is introduced into a copper recovery procedure; gold is recovered by chlorination and dissolution in the dissolved slag, and the gold-recovered slag is introduced into silver recovery; gold powder is obtained by reduction of the gold-recovered solution; platinum and palladium are precipitated from the gold-reduced solution; ammonia is added to the platinum and palladium precipitate to separate platinum and palladium; the separated platinum and palladium is refined to recover platinum and palladium; platinum and palladium are reduced from the platinum and palladium precipitated solution to obtain platinum and palladium precipitate and platinum and palladium reduced solution, and the platinum and palladium precipitate is returned to the roasting procedure; tellurium is reduced from the platinum and palladium reduced solution to obtain tellurium powder and tellurium reduced solution, and the tellurium reduced solution is introduced into a wastewater treatment procedure. The application has the beneficial effects that selenium and tellurium, copper, gold, silver, platinum and palladium are stepwise separated and recovered, the recovery rate is high, the wastewater treatment difficulty is small, and environmental pollution is reduced.

This invention discloses a mercury cadmium telluride infrared detector and its fabrication method. The method innovatively employs negative photoresist and a lift-off process to grow a metal mask and define contact hole patterns. This metal mask layer serves as both an ion implantation mask and a contact hole etching mask, solving the problems of implantation region positioning deviation and size mismatch in traditional processes. It enables ultra-small cell spacing, improves the detector's photoelectric performance and array uniformity, and is suitable for the large-scale fabrication of high-density infrared detector planar arrays.

The invention discloses a tellurium-based nano material capable of efficiently inducing copper death as well as a preparation method and application of the tellurium-based nano material. The preparation method comprises the following steps: by taking water as a medium, mixing soluble copper salt and a sulfydryl-containing compound, and stirring to react, so as to obtain a Cu-S2 solution; dropwise adding the Cu-S2 solution into the TeO2 nano-carrier solution, and carrying out stirring reaction; and after the reaction is finished, carrying out solid-liquid separation, taking the solid, and resuspending with methanol to obtain the TeO2 coated Cu-S2 nano material. The preparation method is simple and rapid, large-scale production can be achieved, and the obtained TeO2 coated Cu-S2 nano material can efficiently induce cancer cells to generate copper death, is effective to various cancer cells and has potential clinical transformation application prospects.

An anode (1) for an electrochemical system, in particular an alkali metal secondary battery, comprises a current collector (2) and a nucleation layer (3) located on the current collector (2). On the nucleation layer (3) is an artificial SEI layer (4) which has at least one ta-C layer containing at least one dopant selected from the group of dopant elements comprising hydrogen, silicon, nitrogen, oxygen, silver, tin, zinc, antimony, lead, gold, platinum, bismuth, magnesium, potassium, sodium, calcium, nickel, aluminum, gallium, indium, boron, germanium, tellurium, ruthenium and osmium, wherein the total content of dopant elements is at least 0.1 atomic% and not more than 20 atomic%.

The application provides a purification method of crude tellurium, and belongs to the field of high-purity metal preparation. The application provides a purification method of crude tellurium, which comprises the following steps: rotating crystallization is carried out by immersing a crystallizer into a tellurium melt obtained by melting the crude tellurium; and the temperature of the crystallizer is lower than the temperature of the tellurium melt during the rotating crystallization. The interface shear force generated by the rotating of the tellurium melt realizes the thinning of the solute boundary layer of the liquid-solid interface, and the impurities are forced to be removed from the boundary layer, so that high-purity tellurium is crystallized; the rotation of the crucible promotes the increase of the temperature gradient of the liquid phase zone near the liquid-solid interface, and the increase of the temperature gradient makes the crystallization faster, so that the purification efficiency is improved. The results of the examples show that the purification method provided by the application can purify 4N tellurium to 99.9999% in one step. Moreover, the process flow of the application is simple, and no waste gas, waste water and waste residue are generated.

The invention provides a mercury-cadmium-telluride material, a surface passivation heat treatment method thereof and an infrared detector, the surface passivation heat treatment method of the mercury-cadmium-telluride material comprises the following steps: S1, pretreating the surface of a mercury-cadmium-telluride substrate; s2, depositing and growing a high-component HgCdTe film layer on the surface of the tellurium-cadmium-mercury substrate; s3, depositing and growing a CdTe passive film layer on the surface of the high-component HgCdTe film layer; s4, depositing and growing a ZnS passive film layer on the surface of the CdTe passive film layer; and S5, carrying out passive heat treatment on the tellurium-cadmium-mercury substrate treated in the step S4 under the protection of an inert atmosphere. The three composite passivation film layers are adopted, and the high-component HgCdTe film layer and the HgCdTe substrate material are basically consistent in component, crystal structure and lattice constant, so that the problems that the CdTe film layer preparation process is high in requirement, CdTe / HgCdTe generates stress and dislocation and the like when the traditional CdTe passivation film layer is adopted as the first passivation material layer are solved; the process requirement of preparation of the CdTe passive film layer is reduced, the complexity of a heat treatment process is reduced, and the process window of HgCdTe device processing is widened.

The application relates to an ultrasonic treatment method of high-impurity copper anode slime. The ultrasonic treatment method is realized through hierarchical ultrasonic strengthening and synergistic leaching. In the first-stage leaching, hydrogen peroxide-oxygen-rich air composite oxidants are combined with ultrasonic cavitation effects to realize efficient oxidation leaching of arsenic, antimony and bismuth; in the second-stage leaching, sulfuric acid-sodium sulfite mixed leaching agents are used to remove harmful impurities such as arsenic, antimony and bismuth under ultrasonic strengthening, and to efficiently enrich valuable metals such as gold, silver, selenium and tellurium, so that the treatment period is shortened, energy consumption and reagent consumption are reduced, resource comprehensive utilization is improved, and the method is suitable for efficient separation and resource recovery of high-impurity copper anode slime containing refractory impurities such as arsenic, antimony and bismuth and valuable metals such as gold, silver, selenium and tellurium.

A label-free method for detecting tryptophan and kynurenine in serum based on surface-enhanced Raman scattering (SERS) technology is disclosed, belonging to the field of molecular SERS detection using Raman spectroscopy. The purpose of this invention is to address the problems of expensive equipment, cumbersome operation, and time-consuming analysis in traditional methods for detecting Trp and Kyn molecules, which are difficult to meet the needs of real-time clinical testing, and the current lack of research in the field of direct and simultaneous detection of Trp and Kyn molecules in serum based on label-free SERS technology. Method: 1. Preparation of gold-core tellurium-shell nanoparticles; 2. Preparation of Au@TeNPs SERS substrate using a self-assembly method; 3. SERS detection of tryptophan and kynurenine molecules. This invention, based on the Au@TeNPs SERS substrate, achieves for the first time simultaneous and rapid SERS detection of Trp and Kyn molecules within physiological concentration ranges in serum media. The detection method is rapid, economical, and has significant potential for clinical application.

This invention discloses a method for separating bismuth from waste bismuth telluride thermoelectric materials, belonging to the field of separation and purification technology. The method utilizes a macroporous, weakly basic styrene-based anion exchange resin containing tertiary amines to adsorb bismuth, followed by stepwise elution of the adsorbed resin with an eluent to separate bismuth from the bismuth telluride leachate, yielding a high-concentration bismuth-containing solution. The method disclosed in this invention features high selectivity, mild reaction conditions, simple operation, good recycling performance, and minimal environmental pollution. It can solve the environmental hazards caused by the accumulation of waste bismuth telluride thermoelectric materials and also realize the recycling of scarce metal resources such as bismuth, antimony, tellurium, and selenium, alleviating resource scarcity.

The invention discloses a tellurium-cadmium-mercury detector chip processing method, and belongs to the technical field of semiconductor device manufacturing. The method comprises the following steps: a preorder trepanning process: obtaining a tellurium-zinc-cadmium wafer after passivation layer preparation, carrying out trepanning photoetching, and sequentially carrying out glue uniformizing and exposure development to form a pattern containing a contact hole and an alignment mark; then, materials in the corresponding areas are removed through etching, contact holes and alignment marks are manufactured synchronously, plasma cleaning operation is conducted after photoresist is removed, and residual impurities on the surface are removed; according to the method, the traditional five-step photoetching process is simplified into the four-step photoetching process by optimizing the process and canceling the marking photoetching process, so that the use times of photoetching, etching, cleaning and other equipment are directly reduced, the overall production efficiency can be improved by 15-20%, the consumption of auxiliary materials and the manual operation time are reduced, and the production cost is further reduced.

The application discloses a silver-free high-temperature lubricating coating and a preparation method and application thereof, and comprises the following steps: S1: stirring and mixing an aluminum source, a magnesium source, a chromium source and a phosphoric acid aqueous solution to obtain a mixed solution; S2: mixing the mixed solution with a tellurium source, a molybdenum source and a cobalt source, and obtaining a silver-free high-temperature lubricating coating after ball milling; and coating the silver-free high-temperature lubricating coating on a base material, and obtaining a silver-free high-temperature lubricating coating after solidification. The application provides the high-temperature lubricating coating which is applied to high-temperature alloy fasteners and adopts a telluride to replace silver as a high-temperature lubricating material, and the high-temperature lubricating coating has better high-temperature resistance and stronger stability compared with other coatings; the telluride can maintain the original structure and performance under 600-800 DEG C.

The invention discloses a tunable narrow-band chiral metasurface based on a silicon and germanium-antimony-tellurium composite nanostructure. The tunable narrow-band chiral metasurface comprises a substrate and a silicon and germanium-antimony-tellurium composite chiral metasurface formed on the surface of the substrate, the surface of the silicon and germanium-antimony-tellurium composite chiral super-structure comprises a plurality of silicon and germanium-antimony-tellurium composite chiral nano-structures which are periodically arranged, and each chiral nano-structure is composed of two rectangular nano-rods which are vertically connected and is in an L shape; the silicon and germanium-antimony-tellurium composite chiral nanostructure is a germanium-antimony-tellurium and silicon double-layer chiral nanostructure from bottom to top. The silicon and germanium-antimony-tellurium composite chiral super-structure surface disclosed by the invention can realize narrow-band circular dichroism response in an infrared band, and the wavelength of the narrow-band circular dichroism response can be dynamically adjusted through germanium-antimony-tellurium phase change.

The invention relates to the technical field of preparation of high-purity inorganic nano materials, and discloses a controllable preparation method of a high-purity cadmium telluride nanocrystal, which comprises the following steps: pre-dissolving a conjugated acid salt in a water-phase reaction system, and reacting a cadmium salt precursor with a tellurium source precursor when ammonia gas is introduced as an inorganic gaseous ligand; a pH buffer system is constructed by ammonia gas and conjugated acid salt, and transient stability is provided for the generated cadmium telluride nanocrystals within the pH range for inhibiting the cadmium hydroxide impure phase; according to the method disclosed by the invention, an in-situ pH buffer system is constructed, so that a ligand stabilization function of the ammonia gas is decoupled from an alkaline side reaction phase of the ammonia gas, agglomeration is prevented while an impure phase is inhibited, the ligand and the salt are thoroughly removed after the reaction, and the technical problem that controllability and high purity cannot be obtained at the same time in an inorganic aqueous phase method is solved.

The application discloses a thienothiophene and thiazole organic small molecule with double radicals and a preparation method and application thereof. The material has a structure shown in formula (I): wherein n is the same or different, and each is 0, 1, 2 or 3; X is the same or different, and each is one of nitrogen, oxygen, sulfur, selenium or tellurium elements; and R1 is the same or different, and each is hydrogen or an alkyl group or an alkoxy group. After the material is prepared into a nano drug, oxygen can be spatially and temporally separated under 808 nm near-infrared laser irradiation, a Type I active oxygen species is generated, and photo-thermal conversion is achieved, so that the problem of poor treatment effect caused by a complex microenvironment of a tumor is overcome.

This invention provides a near-space sublimation method for preparing cadmium telluride thin films containing a cadmium zinc telluride (CdZnTe) buffer layer. This method addresses the quality issues of existing cadmium telluride epitaxial films by using CdZnTe polycrystalline material as the growth source for the buffer layer, followed by the growth of the cadmium telluride epitaxial film on the buffer layer. First, the near-space sublimation furnace growth process parameters are set, and the pretreated CdZnTe polycrystalline growth source and GaAs substrate are placed into the near-space sublimation furnace to grow a 5-15 μm CdZnTe buffer layer on the GaAs substrate. Second, the CdZnTe polycrystalline growth source and the GaAs substrate with the grown buffer layer are removed from the near-space sublimation furnace cavity, and the growth process is repeated using a cadmium telluride growth source to prepare a cadmium telluride epitaxial film with a thickness of 300-400 μm.

This invention relates to a method for the reverse-sequence dual-temperature zone oxygen-enriched oxidation separation and recovery of antimony and tellurium from a lead-bismuth alloy. The method involves melting the alloy and controlling the temperature within the range of 580-600℃, then introducing oxygen-enriched compressed air into the melt for the first stage of oxidation. The system temperature is then adjusted to 510-550℃, and oxygen-enriched air is continuously introduced for the second stage of oxidation. A composite oxidant is added in batches to the resulting low-antimony molten alloy to obtain a first-grade lead-bismuth alloy. The obtained conversion slag is pretreated by ball milling and then leached with sodium hydroxide solution. After solid-liquid separation, leaching residue and conversion liquid are obtained separately. The conversion liquid undergoes subsequent purification and electrowinning processes to finally produce #1 tellurium ingots. This invention, through reverse-sequence dual-temperature zone oxygen-enriched oxidation control, achieves preferential volatilization and recovery of antimony while inhibiting excessive oxidation of lead and bismuth, and simultaneously allows residual antimony and tellurium to enter the conversion slag. It has significant advantages such as a compact process flow, high metal recovery rate, strong operational controllability, and good environmental compatibility.