562results about How to "Refined grain size" patented technology

Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH₃ pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH₃ pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH₃ pulsed supply AlN growth method.

An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

A translucent alumina sintered body wherein the total content of an alkali metal element and an alkaline earth metal element is 50 ppm or less, and the linear transmittance of a light having a wavelength of 600 nm is 40% or more at a thickness of the sintered body of 0.85 mm.

Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.

Disclosed is a method of manufacturing graphene, a transparent electrode and an active layer including the graphene, and a display, an electronic device, an optoelectronic device, a solar cell, and a dye-sensitized solar cell including the transparent electrode and the active layer. The method of manufacturing graphene includes: (a) preparing a subject substrate; (b) forming a metal thin film on the subject substrate and heat-treating the metal thin film to increase the grain size of the metal thin film; (c) supplying a carbon source material on the metal thin film; (d) heating the supplied carbon source material, the subject substrate, and the metal thin film; (e) diffusing carbon atoms generated from the heated carbon source material due to thermal decomposition into the metal thin film; and (f) forming graphene on the subject substrate by the carbon atoms diffused through the metal thin film.

A gamma prime precipitation-strengthened nickel-base superalloy and method of forging an article from the superalloy to promote a low cycle fatigue resistance and high temperature dwell behavior of the article. The superalloy has a composition of, by weight, 16.0-22.4% cobalt, 6.6-14.3% chromium, 2.6-4.8% aluminum, 2.4-4.6% titanium, 1.4-3.5% tantalum, 0.9-3.0% niobium, 1.9-4.0% tungsten, 1.9-3.9% molybdenum, 0.0-2.5% rhenium, greater than 0.05% carbon, at least 0.1% hafnium, 0.02-0.10% boron, 0.03-0.10% zirconium, the balance nickel and incidental impurities. A billet is formed of the superalloy and worked at a temperature below the gamma prime solvus temperature of the superalloy so as to form a worked article, which is then heat treated above the gamma prime solvus temperature of the superalloy to uniformly coarsen the grains of the article, after which the article is cooled to reprecipitate gamma prime. The article has an average grain size of not coarser than ASTM 7 and is substantially free of critical grain growth.

The present invention relates to a method of crystallizing a silicon film, a thin film transistor, and a fabricating method thereof using the same. More particularly, the present invention relates forming a crystalline silicon film by crystallizing a silicon film using laser energy, and a thin film transistor and a fabricating method thereof using the same. The present invention includes forming a buffer layer on a substrate and forming an amorphous silicon film on the buffer layer wherein the amorphous silicon film includes a first region and second regions connected to both ends of the first region. The buffer layer is etched to a degree by using the amorphous silicon as a mask, wherein a space is formed under the first region and a central part of the second region contacts a remaining portion of the buffer layer. The amorphous silicon film is then crystallized. In another aspect, the present invention includes a method of fabricating a thin film transistor using this method of crystallizing an amorphous silicon film.

The invention discloses a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a decoration layer, a perovskite layer, an electron transport layer, a barrier layer and a metal electrode. The surfaces of PEDOT: PSS, NiOx and the hole transport layer are decorated by ionic liquid based on imidazole, atomic force microscope graphs before and after the decoration are compared, and the decorated surface appearance is more smooth, which is conducive to inhibiting the compounding of dark current. The perovskite layer is a new perovskite material 3MAI: PbAc2.xH2O (x is not smaller than 0 and is not greater than 3), and is prepared by quickly preheating a substrate and heating a perovskite precursor solution, namely instant heating assisted spray coating technology (HASP) at a low temperature (lower than 100 DEG C), which is conducive to increasing the grain size of perovskite and reducing the defects between perovskite grains so as to greatly improve the efficiency of the perovskite battery. The photoelectric conversion efficiency of the final battery device is greater than 19%, the flexible device efficiency is 10.8%, no hysteresis effect is formed, and thus the preparation method has a broad application prospect.

The invention relates to an aluminum-scandium alloy target blank and a preparation method and application thereof. The aluminum-scandium alloy target blank comprises, by weight part, 0.1-15 parts of scandium and 85-99.9 parts of aluminum, and the oxygen content of the aluminum-scandium alloy target blank is smaller than or equal to 160 ppm. The aluminum-scandium alloy target blank has the beneficial effects that the oxygen content is low, then the prepared target blank cannot generate abnormal discharge or particle splashing scars, and later high-quality film forming can be guaranteed; and inaddition, the aluminum-scandium alloy target blank is even in target blank crystal particle size.

The invention is directed to an improved semiconductor structure, such that within the same insulating layer, Cu interconnects embedded within the same insulating level layer have a different Cu grain size than other Cu interconnects embedded within the same insulating level layer.

The invention discloses a method for reducing net level of bearing steel wire rod carbide, including the following steps: firstly, bearing steel continuous casting billet is heated and warmed up, and rough rolling, medium rolling and pre-finishing treatments are carried out at the temperature of 1030 to 1130 DEG C, so that the accumulated elongation percentage n1 of rolled pieces is 65 to 120 times; secondly, pre-hydrocooling treatment of rolled pieces is carried out, the cooling speed is controlled in the range of 10 to 40 DEG C per second, and the cooling time is controlled in the range of 0.8 to 2.2 seconds; then 4 to 10 sub-finishing treatments of rolled pieces are carried out, the start-rolling temperature is controlled in the range of 900 to 950 DEG C, and the final-rolling temperature is controlled in the range of 920 to 990 DEG C; then the rolled pieces are in hydrocooling treatment, the cooling speed is controlled in the range of 50 to 350 DEG C per second, the spinning temperature is controlled in the range of 760 to 820 DEG C, and dispersed rolls are manufactured; finally, the dispersed rolls are in air-cooled treatment, the air-cooled speed is controlled in the range of 2 to 10 DEG C per second, the roll collection temperature when the dispersed rolls come out of air-cooled roller way is controlled in the range of 330 to 450 DEG C, and the dispersed rolls are disposed in environmental air and cooled till room temperature. The products produced by using the method have 95% of carbide whose net level is less than or equal to 1.0 in which the average level is 0.95, thereby being capable of increasing abrasion resistance and service life of steel.

The invention discloses a steel plate ingot casting device, which comprises a pedestal, a fixed framework and an ingot mold, wherein the fixed framework is fixedly connected with the pedestal; the ingot mold is positioned in the fixed framework and consists of two pairs of side templates, i.e., front, rear, left and right side templates, and a bottom template; the outer sides of the side templates and the bottom template are respectively provided with a cooling water box; the side templates are provided with squeezing mechanisms; the bottom template is provided with a lifting mechanism; the side templates and the bottom template are all copper plate products; and the bottom template is provided with a runner port. According to the steel plate ingot casting device, deformation under cold and hot intensity stress can be avoided, and a shrinkage hole is avoided; since the solidification time is greatly shortened, the segregation in a steel ingot can be obviously relieved, thereby greatly improving the internal quality and the performance of a produced ultra-thick plate; and meanwhile, the steel plate ingot casting device has the advantages of freely adjustable ingot mold size, long service life of the ingot mold and the like.

The invention provides a preparation method of an ultrafine grain rare earth magnesium alloy. The method comprises the following steps of: firstly performing solution treatment on a rare earth magnesium alloy cast ingot to obtain the rare earth magnesium alloy after the solution treatment; then performing heat deformation processing on the obtained rare earth magnesium alloy after the solution treatment to obtain a heat-deformed rare earth magnesium alloy plate, wherein the heat deformation processing temperature is 350 DEG C-450 DEG C; and finally performing accumulative roll bonding with the single-pass rolling reduction of 50% on the obtained heat-deformed rare earth magnesium alloy plate, and annealing to obtain the ultrafine grain rare earth magnesium alloy. According to the preparation method provided by the invention, a heat deformation processing-accumulative roll bonding compound process is firstly adopted to successfully prepare the ultrafine grain rare earth magnesium alloy, and the problem of deterioration of mechanical properties, which is caused by non-uniform distribution of thick and big LPSO (long period stacking ordered) phases in the alloy is effectively solved; and furthermore, the preparation method provided by the invention has the advantages of simple process flow and low equipment cost, and is favorable for further large-scale industrial production.

A method and apparatus for fabrication of objects retaining nano-scale characteristics. A composition is provided comprising grain growth inhibitor particles in solution with a binding agent in a molten phase. An electric field and a magnetic field are generated with a combined extraction electrode. The composition is electrosprayed from a nozzle with the electric field to form a stream of droplets. The electric field drives the droplets toward a moving stage holding an object comprising successive deposition layers. The magnetic field limits dispersion of the stream of droplets. The stage is moved laterally as the stream of droplets impacts the object to form a current deposition layer of the object. The stage is moved vertically as necessary to maintain a target stand-off distance between the nozzle and a previous deposition layer of the object, based on profile data of the previous deposition layer.

The invention provides a steel bar with high weather resistance, low cost and seawater corrosion resistance and a production process. The steel bar comprises the following elementary compositions of,by weight, 0.04%-0.10% of C, 0.10%-0.50% of Si, 0.5%-1.6% of Mn, 0.03% or less of P, 0.02% or less of S, 2%-4% of Cr, 0.3%-0.5% of Cu, 0.2%-0.6% of Ni, and the balance Fe and inevitable impurities. According to the steel bar, the mechanical property meets the requirement of the steel bar for corrosion resistance, the aging strain is low, and the corrosion rate is lower than 70% that of common steel bars. The technical path of the process comprises a 70-ton ultrahigh-power electric furnace, LF ladle refining, deoxidation and alloying after steel discharging, argon blowing, continuous casting of165 square billets at four streams by four machines, a heat accumulating type stepping heating furnace, 18 non-twist tandem mills, controlled-rolling and controlled-cold cooling, finishing, packagingand storage.

The invention belongs to the field of aluminum-based composite material and preparation technology thereof and in particular discloses a ceramic particle reinforced aluminum-based gradient composite material, a preparation method thereof and a device used by the method. The composite material uses aluminum alloy as a matrix; the volume fractions of ceramic particles serving as a reinforcement material in the surface layer and the bottom layer are between 30 and 40 percent and between 0 and 5 percent respectively; the ceramic particles perform continuous gradient variation from the surface layer to the bottom layer; and the preparation method comprises the following steps: introducing the ceramic reinforced particles to a high-pressure airflow channel by a discharge amount regulation device to form a solid phase flow and a gas phase flow; atomizing molten aluminum alloy liquid, mixing the molten aluminum alloy liquid and the ceramic particles of the solid phase flow and the gas phase flow, and precipitating the mixture on a deposition matrix to prepare a deposition billet; and controlling the discharge amount regulation device and output air pressure through a programmable logic controller according to the height information of the deposition billet to obtain the ceramic particle reinforced aluminum-based gradient composite material. The preparation method of the invention has convenient operation and high automation degree; and the prepared composite material has the advantages of light weight, high wear resistance and anticorrosion of the surface and the like.