277 results about "Laser annealing" patented technology

The invention provides a double-head semiconductor laser annealing device, which relates to the field of semiconductor manufacturing, and comprises an annealing machine shell, an annealing rack, an annealing processing table, a positioning groove, an annealing support piece, an annealing protection mechanism and a clamping support mechanism, the annealing machine frame is fixedly connected to the interior of the annealing machine shell. The annealing inlet is formed in the front of the annealing machine shell; the annealing machining tables are connected to the upper portions of the conveying guide rails in a sliding mode. The positioning grooves are formed in the upper portion of the annealing machining table. The annealing supporting pieces are connected to the inner side of the annealing machining table in a sliding mode. The annealing protection mechanism is arranged on the inner side of the annealing machine shell; the two sets of clamping and supporting mechanisms are arranged, and the two sets of clamping and supporting mechanisms are arranged on the outer side of the annealing machining table respectively, so that the wafers are prevented from deviating in the conveying process, the planeness of the wafers is guaranteed, and the problem that the wafer machining quality is affected due to deviation of the planeness of the fixed wafers during heavy-load conveying is solved.

The utility model provides a calibration device, which is used for calibrating a base of laser annealing equipment, and mainly comprises at least three laser range finders, the laser range finders are arranged above the base, the at least three laser range finders are located at the same horizontal height and are not collinear, and the laser range finders are used for measuring the vertical distance between the laser range finders and the base; the plurality of adjusters are arranged on the edge of the base, and the adjusters are used for adjusting the levelness of the base; and the controller is electrically connected with the laser range finders and the plurality of adjusters respectively, and the controller controls the plurality of adjusters to adjust the levelness of the base based on the at least three vertical distances measured by the at least three laser range finders. The levelness of the base can be monitored in real time based on the laser range finder no matter whether the laser annealing equipment is executing the laser annealing process or not, the levelness of the base is adjusted in real time through the adjuster, the adjusting time of the levelness of the base can be shortened, and the adjusting efficiency can be improved.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

A laser annealing system and a laser annealing method are provided. A laser annealing system for annealing a thin film by irradiating the thin film on a substrate with a pulsed laser light, the laser annealing system comprising: a laser device for outputting the pulsed laser light; an optical system that irradiates the thin film with pulse laser light; and a processor that performs control to irradiate the same portion of the thin film with the pulsed laser light by performing burst irradiation in which a burst period in which the pulsed laser light is continuously irradiated and a suppression period in which the irradiation of the pulsed laser light is suppressed are repeated.

The invention discloses a wafer scribing process, which comprises the following steps of: amplifying the line width of a saw street dummy copper conductor and continuously filling to form a shearing buffer copper strip; performing double-pulse laser annealing on the shear buffer copper strip to generate a twin crystal softening layer; back infrared gradient preheating is carried out according to the thermoplastic transition temperature of the copper strip, the feeding rate and the rotating speed of a tool are corrected in combination with vibration data coupling, and a plastic initial saw kerf is obtained; layering progressive deep cutting is carried out according to multi-gear cutting depth data, so that the copper strip slides to absorb energy under the pulse load and is elastically reset through a low dielectric layer, and a full-depth saw kerf is formed; and performing constant-temperature crystal locking and gradient cooling in a nitrogen environment, so that the twin crystal structure of the copper strip is stable and is interlocked with the dielectric layer shrinkage hoop, and a flexible bridging unit is generated on the side wall of the saw kerf. According to the technical scheme, the interlaminar shear stress can be subjected to peak clipping and shunting at the cutting moment, selective layering of a multi-layer interconnection interface is inhibited, and the yield and long-term reliability of the ultrathin wafer are improved.

The invention relates to a wafer laser annealing device and method, and the device comprises a laser which is used for emitting a laser beam so as to carry out the annealing of a wafer; and the temperature measurement and feedback unit is used for monitoring the surface temperature of the wafer in real time so as to identify a temperature abnormal region of the wafer, and outputting an instruction according to an algorithm so as to dynamically regulate and control the laser parameters of the laser device so as to eliminate the temperature abnormal region. The wafer laser annealing device and method provided by the invention can give consideration to high efficiency, uniformity and cost controllability.

The invention provides a seed crystal bonding method for inhibiting back sublimation of SiC, and belongs to the technical field of silicon carbide crystal growth treatment. A laser annealing mode is adopted, laser is used as a heat source, after the laser passes through a transmission system, a laser beam with uniform energy distribution can be generated and is projected to the surface of the silicon carbide seed crystal, silicon carbide on the surface layer absorbs the energy of the laser to be melted and then decomposed into carbon and silicon, the melting point of the silicon is low, and the silicon escapes after being melted and gasified; and the left carbon can form a compact carbon film on the surface layer of the silicon carbide. The production cost is reduced, the production efficiency is improved, meanwhile, the problem of back sublimation during SiC growth is solved, and the success rate of seed crystal bonding and the SiC crystal quality are both improved.

A memory device includes alternating stacks that are laterally spaced apart from each other by lateral isolation trench fill structures, and each of the alternating stacks includes a respective vertically alternating sequence of insulating layers and electrically conductive layers, memory openings vertically extending through a respective one of the alternating stacks, memory opening fill structures located in the memory openings, where each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective vertical stack of memory elements, and a polycrystalline semiconductor source layer underlying the alternating stack and contacting bottom surfaces of the vertical semiconductor channels. Each of the lateral isolation trench fill structures includes a thermally conductive trench fill material portion that is vertically spaced from the polycrystalline semiconductor source layer by a thermally insulating material.

Techniques are provided for calibrating thermal annealing processes (e.g., laser annealing) using microfabricated resistance temperature sensors. For example, a device comprises a substrate, and a resistance temperature sensor disposed on the substrate. The resistance temperature sensor comprises a stack of alternating metal layers of a first metal and a second metal, wherein the first metal and the second metal are different types of metals.

Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.

The invention relates to the technical field of semiconductor technologies, and provides a laser annealing breakpoint supplementary scanning method and device, electronic equipment and laser annealing device.The method comprises the steps that under the condition that alarm information or abnormal information of the laser annealing technology of a target object is received, a laser is controlled to be shut down, and current position information of a motion table system is recorded; and initial position information can be provided for subsequent complementary scanning. Under the condition that the laser is determined to be shut down, the motion platform system is controlled to stop moving, and heat accumulation caused by continuous irradiation of the laser on the target object is avoided. The current position information of the motion platform system is utilized, and the breakpoint repairing formula of the laser annealing process is automatically generated in combination with the original formula of the laser annealing process, so that the generation efficiency can be improved, and the generation error can be reduced. Under the condition that the breakpoint complementary scanning signal of the target object is received, breakpoint complementary scanning is performed on the target object from the breakpoint position information of the laser annealing process of the target object by using the breakpoint complementary scanning formula, so that the accuracy of a complementary scanning result can be improved.

The utility model discloses a chuck device and laser annealing equipment. The chuck device comprises a bearing platform, the bearing platform comprises a heating component and a wafer carrying disc on the heating component, and the distance between the wafer carrying disc and the heating component is adjustable; the temperature measuring part is used for acquiring the temperature of each measuring position of the wafer loading disc or the wafer; the levelness measuring part is used for acquiring the levelness of the wafer loading disc or the wafer; the first automatic adjusting assembly is used for automatically adjusting the distance between the wafer carrying disc and the heating part according to the temperature obtained by the temperature measuring part; and the second automatic adjusting assembly automatically adjusts the levelness of the wafer carrying disc according to the levelness obtained by the levelness measuring component. According to the technical scheme, the first automatic adjusting assembly and the second automatic adjusting assembly can automatically adjust the distance and the levelness according to the temperature and the levelness, the convenience and the real-time performance of calibrating the wafer carrying disc can be improved, the process processing effect is good, and then the process processing quality can be improved.

The invention provides a gate annealing method for a ferroelectric transistor, and the method comprises the steps: forming an N / P well layer, a source electrode and a drain electrode on a substrate, and enabling the source electrode and the drain electrode to be formed at the two sides of the N / P well layer; through an atomic layer deposition process, ferroelectric materials are deposited in a grid region where a grid is to be formed, a ferroelectric layer is formed, titanium oxide is deposited on the surface of the ferroelectric layer to serve as a stress layer, amorphous silicon is deposited on the surface of the stress layer to serve as a sacrificial layer, and laser annealing treatment is carried out on the surface of the sacrificial layer to induce the ferroelectric layer to generate a ferroelectric phase. The stress layer provides stress for the ferroelectric layer to stabilize the ferroelectric phase; the sacrificial layer is removed, titanium nitride is deposited on the surface of the stress layer after laser annealing to serve as a work function layer, conductive metal is deposited on the work function layer to form a conductive layer, and the gate metal lamination layer is obtained. The invention further provides a gate structure obtained based on the gate annealing method and a ferroelectric transistor.

An apparatus comprises optical apparatus, and electrical characterization apparatus. The optical apparatus and the electrical characterization apparatus comprise an integrated configuration to perform laser annealing operations for tuning junction resistances of superconducting tunnel junction devices on a quantum chip, and to perform in-situ resistance measurements to measure the junction resistances of the superconducting tunnel junction devices on the quantum chip.

The application provides a laser annealing method and system, and relates to the field of integrated circuit manufacturing. The method comprises the following steps: a first laser module is used to emit a first laser beam with a first wavelength to a wafer, and a second laser module is used to emit a second laser beam with a second wavelength to the wafer; the reflectivity of the wafer to the laser beams with the first wavelength and the second wavelength is measured, and a reflectivity ratio is obtained; the annealing temperature of the wafer is measured; according to the measured annealing temperature and a target annealing temperature, a target total power is determined, and according to the reflectivity ratio and the target total power, the power of the first laser module and the second laser module is adjusted. According to the method, the reflectivity of the wafer to the laser beams with the two wavelengths is complementary to a certain extent, so that the pattern effect can be improved, and the annealing temperature uniformity of the wafer is improved. According to the measurement results of the annealing temperature and the reflectivity, the power is adjusted, so that the annealing temperature non-uniformity of the wafer is corrected, and the annealing temperature uniformity of the wafer is further improved.

The application relates to a laser annealing device for improving a CMOS wafer shallow junction process, which comprises a laser, a beam pointing adjustment system, a beam expander, a power adjustment system, a knife edge, a third beam combiner, a beam quality analyzer, an integrating mirror, a heating disc, a motion platform, a computer, a three-color temperature thermal emission detector and a laser range finder. The power adjustment system is composed of a lambda / 2 glass and a polarizer arranged on an optical path. The laser emits light with fixed power, the power adjustment system simultaneously controls the output power and the polarization, and avoids problems such as beam quality deterioration and power stability reduction caused by laser power change; the beam quality analyzer, the three-color temperature thermal emission detector and the power adjustment system jointly form an annealing power negative feedback system, and the annealing power size and stability are controlled in real time according to the annealing area temperature feedback result.

The invention provides a method for reducing the laser annealing carbon precipitation amount of a SiC material and the SiC material. The method comprises the steps that (1) a silicon-nickel alloy layer is formed on the back face of a SiC substrate; (2) laser annealing treatment is carried out on the surface of the formed silicon-nickel alloy layer, so that ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate; by adopting the method disclosed by the invention, not only can the precipitation of carbon be effectively reduced and the particle size of the precipitated carbon be reduced, but also good ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate, and the specific contact resistivity is relatively low.

The invention provides a preparation process of a TOPCon battery and the TOPCon battery, and particularly relates to the technical field of solar battery preparation. According to the preparation process, laser grooving, laser annealing, acid pickling, grid line electroplating and light injection are sequentially carried out on a TOPCon blue diaphragm to obtain the TOPCon battery. According to the preparation process of the TOPCon battery provided by the invention, the laser annealing process is introduced after the laser grooving and before the acid pickling, and the damaged area of the battery piece is accurately repaired, so that the purpose of repairing the damage is achieved, the non-damaged area is not influenced, and crystal defects possibly generated in the laser grooving process are reduced, thereby reducing the compound loss of the battery and improving the reliability of the battery. The efficiency of the battery is improved; meanwhile, laser annealing improves the passivation effect of tunnel oxide and the quality of a contact interface between a cell substrate and metal, reduces the surface recombination rate, and improves the contact resistance, thereby improving the open-circuit voltage (Uoc) and fill factor (FF) of the cell.

The utility model discloses a pinch roller assembly capable of realizing edge rolling operation of a high-strength steel plate workpiece, which comprises a laser heating mirror group for pre-softening a high-strength steel plate to be subjected to edge rolling operation, a rolling device for carrying out edge rolling operation on the pre-softened high-strength steel plate, and a servo articulated arm for connecting the laser heating mirror group and the pre-rolling device, therefore, the laser lens group obtains appropriate heating light spots and orientations relative to the edge rolling head according to the angle and position conditions. According to the pressing wheel assembly, on one hand, laser of the laser heating mirror set is adopted for heating a local area of a high-strength steel plate, then the edge rolling effect is achieved, then the rolling force in the edge rolling process is reduced, and the laser mirror set can adjust the angle and position conditions relative to an edge rolling head so as to obtain appropriate heating light spots and orientation; and on the other hand, the laser heating mirror set and the rolling device can be jointly installed on the mechanical arm by means of the servo articulated arm, and synchronization of laser annealing and rolling operation is achieved.

The application provides a recrystallization method of a crystal material, comprising the following steps: depositing a covering layer on the surface of the crystal material; irradiating one side of the crystal material with the covering layer deposited thereon by using a pulse laser, so that the crystal material is heated and cooled to crystallize, and a recrystallization layer is formed on the side of the crystal material close to the covering layer; and etching the covering layer on the surface of the crystal material to expose the recrystallization layer. By pre-depositing the covering layer on the surface of the crystal material and annealing the crystal material by using the pulse laser, the high-quality regeneration of the crystal material is realized, and the problem of loss of doped atoms is effectively inhibited.

The purpose of the present disclosure is to form a wide buffer layer with less damage accumulation and no interface. In a method for manufacturing a power semiconductor device according to the present disclosure: hydrogen is introduced into a region of a silicon wafer (1) having a first main surface (S1) and a second main surface (S2) opposite to the first main surface (S1), the region including at least a first region which is a region at a predetermined depth from the second main surface (S2); the silicon wafer (1) is irradiated with an electron beam to form a defect in the first region and a second region between the first region and the first main surface; the silicon wafer (1) is subjected to heat treatment to cause reaction of hydrogen and the defect to form a donor; and laser annealing is performed from the first main surface (S1) or the second main surface (S2) of the silicon wafer (1), thereby deactivating the donor in the second region and making the first region a buffer layer (11).

The application relates to an anti-reflection coating preparation method for high-transmittance optical lenses, and the method comprises the following steps: firstly, gradient temperature preheating and plasma gradient activation pretreatment are adopted to form an active suspension bond layer on the surface of the optical lens base, so that the film base bonding force is enhanced; secondly, a gradient refractive index stress buffer layer is deposited, so that the refractive index and the thermal expansion coefficient of the optical lens base and the multilayer film system are continuously transitioned, and the interface stress mutation is eliminated; thirdly, during the construction process of the multilayer antireflection film system, the ion beam assisted deposition process is adopted to accurately control the film layer quality; finally, an in-situ pulse laser annealing process is introduced to perform layer-by-layer stress release treatment on each film, so that the lattice residual stress is eliminated. By adopting the technical scheme, the generation of film layer microcracks and interface peeling is effectively inhibited, and the stability and service life of the wide-spectrum multilayer film system are significantly improved.

The invention provides an excimer laser annealing system and a control method thereof, and relates to the technical field of laser annealing, the excimer laser annealing system comprises a main control unit, a laser generation unit, an energy detection module, a motion platform, a substrate bearing table and a position detection module, the position detection module is used for collecting position information of the motion platform, and the energy detection module is used for collecting energy data of laser spots; the system further comprises a self-adaptive laser energy closed-loop adjustment module, a dynamic delay laser trigger module and an integrated microfluid thermal management and rapid cooling module. The self-adaptive laser energy closed-loop adjusting module is arranged, online, real-time and pixel-level uniformity compensation of laser spot energy distribution is achieved, a dynamic delay laser triggering method based on real-time position feedback is adopted, and synchronization errors caused by mechanical transmission gaps, speed fluctuation and vibration of a motion platform are effectively compensated.

The utility model relates to the technical field of strip steel processing equipment, and discloses a strip steel production line silicon steel sheet weld joint on-line laser annealing device which comprises a strip steel processing table and a sliding frame, the strip steel processing table comprises two sets of supporting frames and a front-back adjusting seat, and the two sets of supporting frames are symmetrically arranged on the two sides of the bottom of the strip steel processing table; the front-back adjusting base is arranged on one side of the top of the supporting frame, and the sliding frame comprises a moving trolley and a laser gun. Strip steel can be clamped and fixed through the pressing hydraulic cylinder, the pressing plate, the strip steel machining table and the anti-skid table, the position of the laser gun can be moved through the sliding frame and the moving trolley, and laser is emitted to the upper surface and the lower surface of a welding seam through the connecting optical fiber, the laser generator and the laser gun. The directional reconstruction of the weld structure is realized through the high-energy beam heat source, so that the stability of the strip steel weld quality is improved, the phenomenon of strip steel weld fracture is reduced, the production cost is greatly reduced, and the production efficiency is improved.

The present invention provides a laser annealing energy control method and a laser annealing apparatus. In the laser annealing energy control method, when a laser spot moves relative to a substrate with a first laser power, the laser power of the laser spot is reduced to a second laser power at a first position relative to the substrate; when the laser spot moves relative to the substrate to a second position, and then moves from the second position to a third position relative to the substrate, the laser power is increased to a third laser power; and the laser spot performs scanning annealing on the substrate with the third laser power. By moving the laser spot to the edge of the substrate and reducing the laser power, energy spike problems and chipping problems due to thermal stress at the edge of the substrate are prevented.

The invention discloses a superconducting quantum chip flip-chip bonding process, a quantum chip, a storage medium and electronic equipment. The process comprises the following steps: providing a first substrate containing a Josephson junction and a first welding spot array in a non-junction region, a corresponding second substrate and a second welding spot array; the two substrates are in inverted butt joint, so that the welding spots are matched and aligned; and carrying out local annealing and pressure welding on the aligned welding spots. According to the method, local heating is carried out on the indium column through the laser micro-area annealing technology, and the problem that a Josephson junction is heated and damaged due to the fact that traditional flip-chip bonding whole-face heating is carried out is effectively solved. And meanwhile, the shortest heating time can be shortened to 40ms, thermal stress and deformation are greatly reduced, and due to the non-contact and repeatable characteristics of laser annealing, the method is suitable for large-scale efficient production of the superconducting quantum chip, the stable performance of the device is ensured, and the manufacturing yield is improved.

The invention discloses a manufacturing method of a semiconductor device, which comprises the following steps of: 1, forming a source and drain region of the complete semiconductor device, and forming the source and drain region in a semiconductor substrate on two sides of a dummy gate structure in a self-aligned manner; step 2, completing a process before removing the dummy gate structures, including: filling an interlayer film in a spacer region between the dummy gate structures, the top surfaces of the dummy gate structures being flush with the top surface of the interlayer film; a plurality of medium-temperature heating processes at the temperature of 500-800 DEG C exist in the step 2, and the activated carriers in the source and drain regions are inactivated by the medium-temperature heating processes. And step 3, removing the dummy gate structure. And step 4, carrying out first laser annealing so as to activate carriers in the source and drain regions of the semiconductor device. According to the invention, the adverse effect of the medium-temperature thermal process on the inactivation of carriers in the source and drain regions can be eliminated, and the activation of the source and drain regions is realized without increasing the process cost.

The invention provides a crystallization method of an amorphous nano-film, which comprises the following steps of: depositing the amorphous nano-film in a reaction cavity by adopting an atomic layer deposition method, performing high-energy laser annealing treatment on the surface of the amorphous nano-film, and converting the amorphous state in the amorphous nano-film into a crystalline state to prepare a crystalline nano-film. According to the method disclosed by the invention, controllable preparation of a crystalline functional film is realized by introducing laser annealing treatment after ALD deposition, a crystallization method of the amorphous nano film is constructed, the problems of poor crystallinity and limited performance after ALD film formation can be effectively solved, and a reliable, efficient and controllable film preparation scheme is provided for a next-generation high-performance device.

The invention provides an InP laser structure and a manufacturing method thereof, and the method comprises the steps: forming an electrode opening in a passivation layer, carrying out Si ion implantation to form a doping compensation layer with the thickness smaller than that of a contact layer in the contact layer at the electrode opening, and then forming a P-surface metal electrode filled in the electrode opening, and local laser thermal annealing is carried out at the interface of the P-surface metal electrode and the contact layer so as to form a gold silicide layer at the interface. On one hand, Si ion implantation can reduce the surface carrier concentration of the uppermost layer of the device and reduce the Schottky barrier so as to obtain smaller contact resistance, on the other hand, the Si ion implantation can react with Au ions diffused to the surface of the contact layer in the subsequent laser annealing process to generate a gold silicide layer so as to further reduce the contact resistance, and meanwhile, the device performance is improved. By controlling the size of the laser beam spot, the influence on the active area can be reduced, and the product performance is improved. The InP laser structure provided by the invention has lower contact resistance and higher active area quality.

A method includes forming a first de-bond structure over a first substrate, where forming the first de-bond structure includes depositing a first de-bond layer over the first substrate, depositing a first silicon layer over the first de-bond layer, depositing a second de-bond layer over the first silicon layer, and depositing a second silicon layer over the second de-bond layer, epitaxially growing a first multi-layer stack over the first de-bond structure, bonding the first multi-layer stack to a second multi-layer stack, and performing a first laser annealing process to ablate the first silicon layer and portions of the first de-bond layer and the second de-bond layer in order to de-bond the first substrate from the first multi-layer stack.