29 results about "Laser annealing" patented technology

An apparatus comprises optical apparatus, and electrical characterization apparatus. The optical apparatus and the electrical characterization apparatus comprise an integrated configuration to perform laser annealing operations for tuning junction resistances of superconducting tunnel junction devices on a quantum chip, and to perform in-situ resistance measurements to measure the junction resistances of the superconducting tunnel junction devices on the quantum chip.

The application provides a laser annealing method and system, and relates to the field of integrated circuit manufacturing. The method comprises the following steps: a first laser module is used to emit a first laser beam with a first wavelength to a wafer, and a second laser module is used to emit a second laser beam with a second wavelength to the wafer; the reflectivity of the wafer to the laser beams with the first wavelength and the second wavelength is measured, and a reflectivity ratio is obtained; the annealing temperature of the wafer is measured; according to the measured annealing temperature and a target annealing temperature, a target total power is determined, and according to the reflectivity ratio and the target total power, the power of the first laser module and the second laser module is adjusted. According to the method, the reflectivity of the wafer to the laser beams with the two wavelengths is complementary to a certain extent, so that the pattern effect can be improved, and the annealing temperature uniformity of the wafer is improved. According to the measurement results of the annealing temperature and the reflectivity, the power is adjusted, so that the annealing temperature non-uniformity of the wafer is corrected, and the annealing temperature uniformity of the wafer is further improved.

This invention belongs to the field of semiconductor manufacturing technology, and relates to a diamond-silicon carbide composite substrate, its preparation method, and its application. The preparation method includes the following steps: coating a silicon substrate with SiC quantum dot sol and annealing it with pulsed laser to obtain a nucleation dot array; sequentially depositing a gradient buffer layer, a 3C-SiC thin film, and a diamond layer; and polishing the surface of the 3C-SiC thin film. The gradient buffer layer is a SiGeC gradient buffer layer with a thickness of 5-10 nm; the 3C-SiC thin film has a thickness of 0.5-5 μm. This invention can achieve stable composite formation of an ultrathin SiC layer with uniform thickness and a smooth surface with diamond while ensuring interfacial bonding strength and structural integrity, which is beneficial for the development and application of high-performance diamond-silicon carbide composite substrates.

The application relates to the technical field of material processing, and discloses a high-precision power control method and system for laser annealing. The method comprises the following steps: acquiring initial thermal conductivity coefficient data, collecting environmental factor data in real time, and determining a preliminary path model of heat propagation; determining a temperature monitoring threshold according to the preliminary path model; collecting real-time temperature data, calculating a temperature gradient, adjusting a power control parameter after the temperature gradient exceeds the temperature monitoring threshold, optimizing a dynamic representation of the thermal conductivity coefficient, and determining an adaptability coefficient; obtaining a corrected power output sequence according to the adaptability coefficient; calculating a heat conduction rate according to the corrected power output sequence, and calculating an updated path model; determining a final power control scheme according to the updated path model; and optimizing a feedback integration process according to the final power control scheme, and obtaining an optimized sequence for different materials. The method can realize efficient and personalized material processing.

A method of forming an integrated circuit is described. The method first positions a semiconductor wafer in a processing chamber, and second, laser anneals at least a portion of the semiconductor wafer. The laser annealing includes tracing a first laser beam, in a first path having a first direction, across the at least a portion of the semiconductor wafer, tracing a second laser beam, in a second path having a second direction, opposite to and colinear with the first direction, across the at least a portion of the semiconductor wafer.

The problem of forming deep trench isolation (DTI) structures suitable for photodetectors with narrow pitch is solved by a process in which a p-doped epitaxial layer is grown on the sidewalls of trenches formed by etching. The epitaxial layer becomes part of the active region of any adjacent photodetector and narrows the DTI structure formed by the dielectric within the trenches. The epitaxial layer can be allowed to close the trench mouths and grow on the front side. Subsequently, floating diffusion regions, etc., can be formed directly on the DTI structure. Optionally, dislocations within the epitaxial layer are removed by laser annealing. Optionally, the epitaxial layer is planarized after annealing. The trenches can be accessed from the back side by thinning the substrate, and then the trenches can be partially or completely filled with dielectric to form the DTI structure.

The application discloses a kind of laser processing device and laser annealing equipment, including diaphragm mechanism, manual adjusting mechanism and automatic adjusting mechanism.Therein, diaphragm mechanism is formed with shaping port, shaping port is used to pass through beam and limit the shape of beam;Manual adjusting mechanism is connected with diaphragm mechanism, for adjusting the position and size of shaping port;Automatic adjusting mechanism is connected with diaphragm mechanism, for adjusting the position and size of shaping port, and the adjusting precision of automatic adjusting mechanism is higher than the adjusting precision of manual adjusting mechanism.The application is adjusted to the position and size of shaping port by setting diaphragm mechanism with shaping port, and respectively cooperating with manual adjusting mechanism and automatic adjusting mechanism, so that the shape of beam can be changed according to actual processing demand, so that in wafer laser annealing process, the shape and size of beam can be matched with the different length, width or direction of strip-shaped annealing area on wafer, to reduce the problem of uneven energy distribution caused by fixed beam shape.

This invention discloses a method for preparing a composite poly-Si thin film, comprising: depositing and growing an intrinsic poly-Si thin film on a single-crystal silicon substrate using a vertical double-layer hot-wire array thermal field design and a high-temperature hot-wire silane pyrolysis technique; and introducing trace amounts of NH3 or N2O gas to generate Si in situ. x N y or SiO x N y A quantum dot barrier layer is formed by introducing a doping source, PH3 or B2H6, for in-situ doping to obtain a doped source layer. The grown poly-Si thin film with the composite structure is then annealed using vacuum rapid annealing or laser annealing to activate the doping source and promote crystal growth. This process produces a poly-Si thin film with a composite structure of "intrinsic layer + barrier layer + doped layer," which improves carrier mobility and reduces parasitic absorption. This structure shows promising application prospects for developing photovoltaic cells and optoelectronic devices.

The present application relates to a kind of hexagonal boron nitride atomic level manufacturing method and device based on controllable micro-explosion, belong to two-dimensional material and atomic level precision manufacturing technical field.The present application uses boron-nitrogen energetic compound as boron-nitrogen-energy integration precursor, under the restraint of array type nanometer limited microcavity, by nanosecond pulse quasi-molecular laser synchronous triggering controllable micro-explosion, combined with boron nitride metasomasis growth template and directional uniform electric field, realize nanosecond boron-nitrogen atom directional self-assembly, prepare high-quality single-layer / few-layer hexagonal boron nitride;And by millisecond laser annealing and high-purity nitrogen gas passivation repair lattice defect.The present application compresses the preparation cycle of single-chip 8 inch wafer hexagonal boron nitride to 10 minutes, and the comprehensive energy consumption is only 1% below traditional CVD process, can accurately control layer number and defect density, 100% compatible with existing semiconductor production line, suitable for the large-scale manufacturing of third-generation semiconductor devices, radio frequency devices, flexible electronics and other fields.

This application discloses a laser annealing system, comprising: a laser for generating a laser beam and focusing it onto a predetermined area of ​​a wafer to form a spot on the wafer surface; a camera for acquiring an image of the spot; a spot analysis system communicatively connected to the camera for analyzing the image of the spot to obtain temperature information of the spot; and a controller communicatively connected to both the laser and the spot analysis system, configured to adjust the energy of the laser beam based on the temperature information of the spot. This avoids the problem of excessively high actual temperature on the wafer surface due to laser overcompensation, thereby improving the annealing quality.

The application provides an optical system and a method for optical annealing of an optical waveguide based on the optical system, and the optical system comprises a laser, a transmission system, a focusing lens, a translation stage, an observation system and a camera; the laser is used for emitting laser; the laser is transmitted to the camera through one light path of the transmission system, and the camera is used for monitoring the beam profile and size of the laser; the laser is transmitted to the focusing lens through another light path of the transmission system, and the focusing lens is used for focusing the laser to an optical element on a chip surface to be processed, so as to perform laser annealing on the optical waveguide of the optical element; and the observation system is used for observing the position of a laser spot irradiated to the chip surface to be processed. The selective annealing treatment of only the optical waveguide of the optical element on the chip surface is realized by using the laser, the whole process is non-contact, the energy is precisely controllable, the thermal influence area is strictly limited, the surface roughness of the optical waveguide can be reduced without damaging the peripheral integrated devices, and the waveguide loss is reduced from the physical root.

This application provides a laser annealing apparatus and a position detection method. The laser annealing apparatus includes a laser, a light-blocking ring, and a position detection module. The laser is configured to apply a laser beam to a wafer to be annealed during the laser annealing process. The light-blocking ring is configured to cover the edge of the wafer to be annealed during the laser annealing process. The position detection module is configured to acquire first detection images of the light-blocking ring at multiple preset position points, and determine whether the light-blocking ring covers the edge of the wafer to be annealed based on the first detection images at the multiple preset position points. Any portion of the boundary region between the wafer to be annealed and the light-blocking ring is acquired by the first detection image at at least one preset position point.

The utility model provides a kind of laser light uniformity component, laser shaping device and laser annealing equipment, it is related to the technical field of semiconductor processing.The laser light uniformity component includes beam splitting module and light uniformity module sequentially arranged along laser propagation direction, light uniformity module includes microlens array, the middle part area of sublens in microlens array is as effective area, the edge area of sublens in microlens array is as transition zone;Beam splitting module includes transmission area and reflection area, transmission area corresponds with effective area, and is configured as: allowing incident laser to transmit and propagate to effective area;Reflection area corresponds with transition zone and is inclinedly arranged relative to laser propagation direction, and is configured as: reflecting incident laser forms monitoring light, and the light path of monitoring light deviates from the light path of incident laser.The laser light uniformity component is applied to laser shaping device, and the imaging quality of formed light spot is higher, the laser annealing effect on material is better, and the energy utilization rate of laser is higher.

Disclosed are a laser annealing method and a method for manufacturing a semiconductor device to which the same is applied. The disclosed laser annealing method is a laser annealing method for a semiconductor device portion including a transistor, and includes the steps of: providing a semiconductor device portion comprising a transistor including a semiconductor and a dielectric that forms a junction interface with the semiconductor; and performing laser annealing by irradiating the semiconductor device portion with a laser under conditions of a gas atmosphere of at least one of deuterium (D2), hydrogen (H2), and ammonia (NH3) and a pressure higher than 1 atmosphere, for passivating at least the interfacial charge between the semiconductor and the dielectric.

This invention relates to the field of semiconductor technology, providing an anti-reflection light system and a laser annealing device. The anti-reflection light system combines an optical modulation component, a polarization beam splitter, and a first polarization state conversion element. This allows reflected light from the target object's surface to be received by a reflected light receiver, effectively preventing the reflected light from being reflected back to the light source and avoiding damage. This significantly reduces costs and facilitates the mass production of precision semiconductor processing equipment. Furthermore, this system eliminates the need to tilt the optical path spindle or the target object surface, resulting in a better final spot morphology, symmetry, and significantly improved spot uniformity. This, in turn, enhances the quality of the shaped spot, improves laser processing precision, and is beneficial for the application of high-precision laser equipment.

The utility model provides a kind of laser vacuum annealing device, including first vacuum cavity, the bearing table of being housed in the first vacuum cavity;The first vacuum cavity is provided with the window that laser beam can pass through;The first vacuum cavity is communicated with the second vacuum cavity of housing mechanical arm, and mechanical arm is configured to carry the wafer of at least one wafer elevator to the bearing table.The laser vacuum annealing device of the utility model increases vacuum cavity, eliminates oxygen element in annealing process process, realizes complete oxygen-free in silicide formation process;Meanwhile, the wafer warping information before annealing is obtained by automatic focusing assembly and the focusing depth of laser annealing is accurately adjusted according to the above information of wafer, reduces the peeling of annealing layer caused by annealing, reduces the risk of semiconductor device performance decline caused thereby.

A method for manufacturing a semiconductor device is provided, comprising: a step of forming a device structure on the front side of a substrate (10) including a gallium oxide semiconductor; a step of forming a base electrode (31) on the back side surface of the substrate (10) after forming the device structure; a step of performing laser annealing on the back side surface of the substrate (10) from the base electrode (31) to form a molten layer (32); and a step of forming a back electrode on the surface of the base electrode after forming the molten layer.

This invention belongs to the field of oxide semiconductor materials technology and discloses a process method for controlling the oxygen vacancy content of multi-component oxide thin films. The method includes the following steps: preparing a multi-component oxide thin film by magnetron sputtering; subjecting the multi-component oxide thin film to rapid thermal annealing; and then subjecting the rapidly thermally annealed multi-component oxide thin film to laser annealing. By controlling the process parameters of rapid thermal annealing and laser annealing, the ratio of metal-oxygen bonds, oxygen vacancies, and defect oxygen in the multi-component oxide thin film is controlled. Based on the quantitative analysis of oxidation states using X-ray photoelectron spectroscopy for material characterization, this invention employs a combination of rapid thermal annealing and laser annealing to synergistically optimize the ratio of metal-oxygen bonds, oxygen vacancies, and adsorbed oxygen, achieving an ideal thin film state of "high metal-oxygen bonds, moderate oxygen vacancies, and low adsorbed oxygen," while maintaining a high positive threshold voltage and obtaining a higher conduction current.

This invention provides a through-hole contact structure and its fabrication method. The fabrication method includes the following steps: providing a semiconductor structure with a through-hole on its upper surface, and sequentially forming a pad layer, a barrier layer, and a metal filler layer. The pad layer covers the inner wall of the through-hole, the barrier layer covers the side of the pad layer away from the inner wall of the through-hole and the bottom surface of the through-hole, and the metal filler layer fills the through-hole. After forming the metal filler layer, a laser with a preset spot diameter and preset energy density is used to scan the upper surface area at the interface between the metal filler layer and the barrier layer. Simultaneously, the light signal and temperature signal at the interface between the metal filler layer and the barrier layer are monitored, and the laser scanning speed is controlled based on the light signal and temperature signal. This invention eliminates delamination defects between the barrier layer and the metal filler layer by laser annealing at the interface between the barrier layer and the metal filler layer, thereby improving product performance and yield.

This invention discloses a method for fabricating and optimizing oxide semiconductor thin-film devices, comprising the following steps: (1) scanning annealing the active layer of the oxide semiconductor thin-film device using a continuous laser; (2) during the scanning annealing process, monitoring the temperature of the active layer in real time, and dynamically adjusting the laser output power according to the deviation between the monitored temperature and the target temperature, so that the temperature of the active layer is maintained within the target temperature. This invention achieves closed-loop temperature control through laser annealing and the introduction of PID control, stabilizing the annealing temperature at the target temperature. This can compensate for changes in heat input caused by different scanning speeds and differences in heat dissipation in different areas of the wafer, ensuring consistent performance across the entire wafer. This invention has a simple process and low thermal budget, and is particularly suitable for the mass production of oxide semiconductor thin-film devices represented by IGZO (such as access transistors in DRAM memory), effectively improving the reliability and yield of the devices.

This invention discloses a crystal oscillator chip mounting structure with four-corner elastic supports and its hermetically sealed packaging method, belonging to the field of electronic component packaging technology. The mounting structure includes a ceramic substrate with a recessed groove in the center and metallized welding pillars at the four corners of the groove. Four metal elastic support legs are respectively installed at the corners, each support leg including a vertical welding part, a horizontal support arm, and an arc-shaped stress buffer part connecting the two. The upper surface of the horizontal support arm has a patterned insulating layer and a reserved electrode connection window. The quartz crystal is supported at its four corners on the horizontal support arm, with its main body suspended in the groove to form an air gap. The hermetically sealed packaging method includes quartz crystal mounting, parallel seam welding sealing, laser annealing stress release, and leak detection sealing steps. This invention effectively isolates thermal and mechanical stress through the elastic support structure and releases residual packaging stress through laser annealing, significantly improving the frequency stability, vibration resistance, and long-term reliability of the crystal oscillator.

The present disclosure provides an excimer laser annealing device and a method for preparing a polysilicon film. The device comprises: a substrate support for carrying a substrate to be processed; a laser unit for emitting a laser beam to a carrying surface of the substrate support, and the laser beam has an extension length along a first direction, and the first direction is parallel to the substrate to be processed; the substrate to be processed comprises a first side edge and a second side edge arranged adjacently, and the substrate to be processed is arranged on the substrate support in a manner that the first side edge is inclined to a reference direction, and the reference direction is perpendicular to the first direction and parallel to a plane defined by the first direction and the substrate to be processed; and the substrate support is capable of moving relative to the laser beam along a second direction, and the second direction is a vector direction inclined to both the first direction and the reference direction. The excimer laser annealing device and the method for preparing a polysilicon film can improve the utilization rate of the substrate.

This disclosure provides a method for temperature- and region-controllable laser annealing activation of SiC devices using a thickness-selective carbon film. The method includes: forming various ion-implanted regions of the target device on the surface of a SiC wafer using photolithography and high-energy ion implantation; cleaning the SiC wafer, spin-coating photoresist onto the surface of the SiC wafer, and developing it to complete the photoresist coverage of the ion-implanted regions; performing secondary photoresist coating and photolithography development on ion-implanted regions with different ion implantation depths and concentrations to cover different ion-implanted regions with photoresist of different thicknesses; thermally decomposing the carbonized photoresist to form a patterned carbon film with selective thickness on each ion-implanted region; irradiating the SiC wafer to perform pulsed laser annealing activation, causing the amorphous doped regions generated by ion implantation on the SiC wafer to recrystallize in a sub-melting state, repairing the lattice distortion caused by ion implantation, and activating the ions in the amorphous doped regions; and removing the carbon film from the surface of the SiC wafer after the activation process.

A method of handling a test pad and a method of fabricating a semiconductor device are disclosed. The method of handling a test pad includes: providing a substrate formed thereon with a first insulating dielectric layer and a first test pad in the first insulating dielectric layer, wherein a surface of the first test pad is at least partially exposed from the first insulating dielectric layer, and there is a probe mark with a protrusion resulting from testing with probe tips on the surface portion of the first test pad exposed from the first insulating dielectric layer; and heating and melting the protrusion by laser annealing, thereby reducing a height of the protrusion. This invention can ensure good flatness of a surface to be bonded while enabling reduced process complexity and preventing metal contamination of the surface to be bonded.

This application discloses a laser annealing method and a semiconductor device. The laser annealing method includes: providing a substrate; scanning at least one row on the substrate with a laser beam, wherein scanning one row on the substrate with a laser beam includes a periodic operation, the periodic operation including the laser beam irradiating the substrate relatively stationary, the laser beam stopping irradiation, and the laser beam source moving relative to the substrate along the row direction; wherein the irradiation area of ​​the laser beam on the substrate is rectangular, the width of the rectangle is smaller than the width of the substrate in the row direction, and the energy density distribution of the laser beam is an isosceles trapezoid, the irradiation area of ​​the laser beam on the substrate includes a first slope region, a uniform region, and a second slope region corresponding to the isosceles trapezoid. The laser annealing method of this application, by adjusting the overlap range of the irradiation area of ​​the laser beam, enables the laser heat to be uniformly transferred to the semiconductor device during laser annealing, resulting in uniform amorphous silicon crystallization on the semiconductor device.