351 results about "Laser annealing" patented technology

The invention relates to the technical field of laser material processing, and discloses a laser annealing temperature control method and device.The method comprises the steps that the specific heat capacity, the heat conductivity coefficient, the heat diffusivity, the heat radiation rate, the heat reflectivity and the heat loss coefficient are obtained, and a material thermal characteristic model is established; performing grid division according to the material thermal characteristic model to obtain a laser energy density parameter; extracting a thermal strain coefficient according to the laser energy density parameter, and establishing a temperature-thermal strain mapping relation prediction model; dynamically adjusting a laser power proportion and a pulse width time sequence according to the temperature-thermal strain mapping relation prediction model to obtain temperature field distribution data; according to the temperature field distribution data, carrying out shortest path analysis to obtain a temperature regulation and control decision; and according to the temperature regulation and control decision, inputting a preset control regulation model, and combining reinforcement learning iteration optimization parameters to obtain a temperature control scheme. According to the method, large-range temperature crossing and fine adjustment in an extremely short time can be realized.

The invention relates to a method for regulating and controlling crystallization of a perovskite thin film based on surface laser annealing and a preparation method of a perovskite photovoltaic module, and the surface laser annealing comprises the steps: constructing an infrared temperature measurement system in annealing equipment to monitor the surface temperature of the perovskite thin film in real time, and carrying out the closed-loop control of the output power of a surface laser; in annealing equipment, a preheating stage and a main annealing stage are executed through a surface laser, and optionally, a post-processing stage can be further added to prepare the perovskite thin film. Compared with the traditional heating stage annealing and line scanning laser annealing process, the method has the advantages that surface laser annealing is more uniform, local instantaneous heating is realized through high-energy dense surface laser within millisecond-second time, a solvent can be rapidly evaporated through rapid temperature rise, synchronous crystallization of a perovskite precursor is promoted, an independent precipitation time window of PbI2 is reduced, and the yield of PbI2 is improved. Therefore, the performance of the device is improved, and the high-efficiency perovskite solar cell module can be prepared.

The invention provides a double-head semiconductor laser annealing device, which relates to the field of semiconductor manufacturing, and comprises an annealing machine shell, an annealing rack, an annealing processing table, a positioning groove, an annealing support piece, an annealing protection mechanism and a clamping support mechanism, the annealing machine frame is fixedly connected to the interior of the annealing machine shell. The annealing inlet is formed in the front of the annealing machine shell; the annealing machining tables are connected to the upper portions of the conveying guide rails in a sliding mode. The positioning grooves are formed in the upper portion of the annealing machining table. The annealing supporting pieces are connected to the inner side of the annealing machining table in a sliding mode. The annealing protection mechanism is arranged on the inner side of the annealing machine shell; the two sets of clamping and supporting mechanisms are arranged, and the two sets of clamping and supporting mechanisms are arranged on the outer side of the annealing machining table respectively, so that the wafers are prevented from deviating in the conveying process, the planeness of the wafers is guaranteed, and the problem that the wafer machining quality is affected due to deviation of the planeness of the fixed wafers during heavy-load conveying is solved.

The utility model provides a calibration device, which is used for calibrating a base of laser annealing equipment, and mainly comprises at least three laser range finders, the laser range finders are arranged above the base, the at least three laser range finders are located at the same horizontal height and are not collinear, and the laser range finders are used for measuring the vertical distance between the laser range finders and the base; the plurality of adjusters are arranged on the edge of the base, and the adjusters are used for adjusting the levelness of the base; and the controller is electrically connected with the laser range finders and the plurality of adjusters respectively, and the controller controls the plurality of adjusters to adjust the levelness of the base based on the at least three vertical distances measured by the at least three laser range finders. The levelness of the base can be monitored in real time based on the laser range finder no matter whether the laser annealing equipment is executing the laser annealing process or not, the levelness of the base is adjusted in real time through the adjuster, the adjusting time of the levelness of the base can be shortened, and the adjusting efficiency can be improved.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

A laser annealing system and a laser annealing method are provided. A laser annealing system for annealing a thin film by irradiating the thin film on a substrate with a pulsed laser light, the laser annealing system comprising: a laser device for outputting the pulsed laser light; an optical system that irradiates the thin film with pulse laser light; and a processor that performs control to irradiate the same portion of the thin film with the pulsed laser light by performing burst irradiation in which a burst period in which the pulsed laser light is continuously irradiated and a suppression period in which the irradiation of the pulsed laser light is suppressed are repeated.

The invention discloses a wafer scribing process, which comprises the following steps of: amplifying the line width of a saw street dummy copper conductor and continuously filling to form a shearing buffer copper strip; performing double-pulse laser annealing on the shear buffer copper strip to generate a twin crystal softening layer; back infrared gradient preheating is carried out according to the thermoplastic transition temperature of the copper strip, the feeding rate and the rotating speed of a tool are corrected in combination with vibration data coupling, and a plastic initial saw kerf is obtained; layering progressive deep cutting is carried out according to multi-gear cutting depth data, so that the copper strip slides to absorb energy under the pulse load and is elastically reset through a low dielectric layer, and a full-depth saw kerf is formed; and performing constant-temperature crystal locking and gradient cooling in a nitrogen environment, so that the twin crystal structure of the copper strip is stable and is interlocked with the dielectric layer shrinkage hoop, and a flexible bridging unit is generated on the side wall of the saw kerf. According to the technical scheme, the interlaminar shear stress can be subjected to peak clipping and shunting at the cutting moment, selective layering of a multi-layer interconnection interface is inhibited, and the yield and long-term reliability of the ultrathin wafer are improved.

The invention relates to a wafer laser annealing device and method, and the device comprises a laser which is used for emitting a laser beam so as to carry out the annealing of a wafer; and the temperature measurement and feedback unit is used for monitoring the surface temperature of the wafer in real time so as to identify a temperature abnormal region of the wafer, and outputting an instruction according to an algorithm so as to dynamically regulate and control the laser parameters of the laser device so as to eliminate the temperature abnormal region. The wafer laser annealing device and method provided by the invention can give consideration to high efficiency, uniformity and cost controllability.

The invention provides a seed crystal bonding method for inhibiting back sublimation of SiC, and belongs to the technical field of silicon carbide crystal growth treatment. A laser annealing mode is adopted, laser is used as a heat source, after the laser passes through a transmission system, a laser beam with uniform energy distribution can be generated and is projected to the surface of the silicon carbide seed crystal, silicon carbide on the surface layer absorbs the energy of the laser to be melted and then decomposed into carbon and silicon, the melting point of the silicon is low, and the silicon escapes after being melted and gasified; and the left carbon can form a compact carbon film on the surface layer of the silicon carbide. The production cost is reduced, the production efficiency is improved, meanwhile, the problem of back sublimation during SiC growth is solved, and the success rate of seed crystal bonding and the SiC crystal quality are both improved.

A memory device includes alternating stacks that are laterally spaced apart from each other by lateral isolation trench fill structures, and each of the alternating stacks includes a respective vertically alternating sequence of insulating layers and electrically conductive layers, memory openings vertically extending through a respective one of the alternating stacks, memory opening fill structures located in the memory openings, where each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective vertical stack of memory elements, and a polycrystalline semiconductor source layer underlying the alternating stack and contacting bottom surfaces of the vertical semiconductor channels. Each of the lateral isolation trench fill structures includes a thermally conductive trench fill material portion that is vertically spaced from the polycrystalline semiconductor source layer by a thermally insulating material.

The invention relates to a semiconductor structure and a preparation method thereof, and the method comprises the steps: providing a substrate, and forming an injection layer on the substrate; forming a buffer layer and a drift layer on the injection layer, and performing laser annealing on the buffer layer and the drift layer from one side away from the substrate; a plurality of conductive channel units arranged at intervals are formed on the upper surface layer of the drift layer, laser annealing is conducted on the conductive channel units from the side away from the substrate, and each conductive channel unit comprises a well region, an emitter region and a contact region, forming a gate structure above the well region; removing the substrate to expose the injection layer; laser annealing is carried out on the injection layer from the side, away from the buffer layer, of the injection layer, and laser wavelengths used in laser annealing of the buffer layer, the drift layer, the conductive channel unit and the injection layer are selected based on light absorption characteristic parameters of the injection layer, the buffer layer and the drift layer. According to the semiconductor structure and the preparation method thereof, the formation of parasitic capacitance is reduced, and the device performance is improved.

Techniques are provided for calibrating thermal annealing processes (e.g., laser annealing) using microfabricated resistance temperature sensors. For example, a device comprises a substrate, and a resistance temperature sensor disposed on the substrate. The resistance temperature sensor comprises a stack of alternating metal layers of a first metal and a second metal, wherein the first metal and the second metal are different types of metals.

Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.

The invention relates to the technical field of semiconductor technologies, and provides a laser annealing breakpoint supplementary scanning method and device, electronic equipment and laser annealing device.The method comprises the steps that under the condition that alarm information or abnormal information of the laser annealing technology of a target object is received, a laser is controlled to be shut down, and current position information of a motion table system is recorded; and initial position information can be provided for subsequent complementary scanning. Under the condition that the laser is determined to be shut down, the motion platform system is controlled to stop moving, and heat accumulation caused by continuous irradiation of the laser on the target object is avoided. The current position information of the motion platform system is utilized, and the breakpoint repairing formula of the laser annealing process is automatically generated in combination with the original formula of the laser annealing process, so that the generation efficiency can be improved, and the generation error can be reduced. Under the condition that the breakpoint complementary scanning signal of the target object is received, breakpoint complementary scanning is performed on the target object from the breakpoint position information of the laser annealing process of the target object by using the breakpoint complementary scanning formula, so that the accuracy of a complementary scanning result can be improved.

The invention belongs to the field of crystalline silicon solar cells, and relates to a slice cell and a preparation method and equipment thereof, and the preparation method comprises the steps: providing a solar cell; cutting the solar cell to obtain a slice cell which has a front surface, a back surface and a cutting surface; passivating the cutting surface to form a passivation layer; the slice batteries are stacked into a slice battery stack in the mode that the passivation layers face the same direction, the end, close to the passivation layers, of the first main surface of the slice battery stack is provided with a first area, and the end, close to the passivation layers, of the second main surface of the slice battery stack is provided with a second area; carrying out first laser annealing treatment on the first area; overturning the sliced battery stack; and carrying out second laser annealing treatment on the second area. The first region and the second region are subjected to two-time separated laser annealing treatment, so that hydroxyl groups and defects generated when an oxide film layer is plated are eliminated, the annealing uniformity is improved, the yield of a photovoltaic module is improved, and the overall structure of a solar cell is not damaged.

The utility model discloses a chuck device and laser annealing equipment. The chuck device comprises a bearing platform, the bearing platform comprises a heating component and a wafer carrying disc on the heating component, and the distance between the wafer carrying disc and the heating component is adjustable; the temperature measuring part is used for acquiring the temperature of each measuring position of the wafer loading disc or the wafer; the levelness measuring part is used for acquiring the levelness of the wafer loading disc or the wafer; the first automatic adjusting assembly is used for automatically adjusting the distance between the wafer carrying disc and the heating part according to the temperature obtained by the temperature measuring part; and the second automatic adjusting assembly automatically adjusts the levelness of the wafer carrying disc according to the levelness obtained by the levelness measuring component. According to the technical scheme, the first automatic adjusting assembly and the second automatic adjusting assembly can automatically adjust the distance and the levelness according to the temperature and the levelness, the convenience and the real-time performance of calibrating the wafer carrying disc can be improved, the process processing effect is good, and then the process processing quality can be improved.

The invention belongs to the technical field of semiconductor manufacturing, and discloses a laser annealing device for silicon carbide wafers, which comprises a shell, a laser heating module is arranged on the inner wall of the shell, a wafer tray is arranged on the inner wall of the shell through a buffer mechanism, and a fixing mechanism is arranged on the inner wall of the wafer tray. A connecting mechanism is arranged on the outer wall of the bottom end of the wafer tray; the connecting mechanism comprises a connecting block, the inner wall of the connecting block is elastically connected with a moving block through a connecting spring, the outer wall of the moving block is fixedly connected with a handle, the outer wall of the moving block is fixedly connected with a trapezoidal block, the inner wall of the connecting block is slidably connected with a sliding rod, and the inner wall of the connecting block is slidably connected with a limiting block. According to the invention, through the cooperation of structures such as the trapezoidal blocks and the limiting blocks, the number of used wafer trays can be flexibly adjusted, and the splicing and splitting processes are convenient and rapid, so that the use flexibility of the wafer trays is improved.

The invention provides a gate annealing method for a ferroelectric transistor, and the method comprises the steps: forming an N / P well layer, a source electrode and a drain electrode on a substrate, and enabling the source electrode and the drain electrode to be formed at the two sides of the N / P well layer; through an atomic layer deposition process, ferroelectric materials are deposited in a grid region where a grid is to be formed, a ferroelectric layer is formed, titanium oxide is deposited on the surface of the ferroelectric layer to serve as a stress layer, amorphous silicon is deposited on the surface of the stress layer to serve as a sacrificial layer, and laser annealing treatment is carried out on the surface of the sacrificial layer to induce the ferroelectric layer to generate a ferroelectric phase. The stress layer provides stress for the ferroelectric layer to stabilize the ferroelectric phase; the sacrificial layer is removed, titanium nitride is deposited on the surface of the stress layer after laser annealing to serve as a work function layer, conductive metal is deposited on the work function layer to form a conductive layer, and the gate metal lamination layer is obtained. The invention further provides a gate structure obtained based on the gate annealing method and a ferroelectric transistor.

An apparatus comprises optical apparatus, and electrical characterization apparatus. The optical apparatus and the electrical characterization apparatus comprise an integrated configuration to perform laser annealing operations for tuning junction resistances of superconducting tunnel junction devices on a quantum chip, and to perform in-situ resistance measurements to measure the junction resistances of the superconducting tunnel junction devices on the quantum chip.

The present invention relates to the field of automatic control technology, and discloses a method and device for controlling the uniformity of large-area laser annealing. The method includes: obtaining a three-dimensional height distribution map of a substrate, dividing sub-regions using an adaptive segmentation algorithm to obtain height means and boundary coordinates. Calculating a focal length adjustment amount based on the height means to generate a focal point parameter table. Through laser testing and comparison, dynamically adjusting the focus until the focal point offset is less than a threshold to obtain corrected focal point data. Extracting energy transition characteristics and generating a scanning path with a minimum energy gradient constraint. Controlling the laser beam according to the path, collecting energy distribution signals, detecting the initial annealing depth, adjusting the laser parameters of sub-regions that do not reach consistency, and smoothing the annealing characteristics of the edge regions to generate control instructions that meet uniform tolerances. This method realizes uniform control of laser annealing by measuring the height distribution of the entire area of the substrate, dividing different sub-regions of the substrate, and smoothing the energy transition between regions.

This laser anneal device 1 comprises: a laser irradiation unit for irradiating a semiconductor wafer 3 with a laser pulse LP for annealing; a wafer table 31 for holding the semiconductor wafer 3; and a static removal part 6 for removing static from the wafer table 31. The static removal part 6 connects the wafer table 31 to a reference potential. The wafer table 31 includes a conductive part 313 that is electrically conductive, and the static removal part 6 connects the conductive part 313 to the reference potential. The wafer table 31 includes a holding part body 311 having lower conductivity than the conductive part 313, and the conductive part 313 is provided on at least a surface of the holding part body 311.

The application provides a laser annealing method and system, and relates to the field of integrated circuit manufacturing. The method comprises the following steps: a first laser module is used to emit a first laser beam with a first wavelength to a wafer, and a second laser module is used to emit a second laser beam with a second wavelength to the wafer; the reflectivity of the wafer to the laser beams with the first wavelength and the second wavelength is measured, and a reflectivity ratio is obtained; the annealing temperature of the wafer is measured; according to the measured annealing temperature and a target annealing temperature, a target total power is determined, and according to the reflectivity ratio and the target total power, the power of the first laser module and the second laser module is adjusted. According to the method, the reflectivity of the wafer to the laser beams with the two wavelengths is complementary to a certain extent, so that the pattern effect can be improved, and the annealing temperature uniformity of the wafer is improved. According to the measurement results of the annealing temperature and the reflectivity, the power is adjusted, so that the annealing temperature non-uniformity of the wafer is corrected, and the annealing temperature uniformity of the wafer is further improved.

The application relates to a laser annealing device for improving a CMOS wafer shallow junction process, which comprises a laser, a beam pointing adjustment system, a beam expander, a power adjustment system, a knife edge, a third beam combiner, a beam quality analyzer, an integrating mirror, a heating disc, a motion platform, a computer, a three-color temperature thermal emission detector and a laser range finder. The power adjustment system is composed of a lambda / 2 glass and a polarizer arranged on an optical path. The laser emits light with fixed power, the power adjustment system simultaneously controls the output power and the polarization, and avoids problems such as beam quality deterioration and power stability reduction caused by laser power change; the beam quality analyzer, the three-color temperature thermal emission detector and the power adjustment system jointly form an annealing power negative feedback system, and the annealing power size and stability are controlled in real time according to the annealing area temperature feedback result.

The laser annealing system includes: a laser system; and a laser annealing device, which irradiates a first pulse laser and a second pulse laser to an irradiated object, the laser annealing device includes: an irradiation optical system, which guides the first pulse laser and the second pulse laser to the irradiated object; a moving mechanism, which causes the irradiation positions of the first pulse laser and the second pulse laser to move relative to the irradiation position of the irradiated object; and a control unit, which controls the laser system so that the irradiated object is irradiated with the first pulse laser, and after the irradiation with the first pulse laser, the area of ​​the irradiated object irradiated with the first pulse laser is irradiated with the second pulse laser, the laser system includes: a laser oscillator, which outputs a pulse laser; an optical pulse stretcher, which stretches the pulse laser output from the laser oscillator; and a gate, which is arranged on a delay optical path of the optical pulse stretcher, and the control unit controls the output of the first pulse laser and the second pulse laser by controlling the opening and closing of the gate.

The invention provides a method for reducing the laser annealing carbon precipitation amount of a SiC material and the SiC material. The method comprises the steps that (1) a silicon-nickel alloy layer is formed on the back face of a SiC substrate; (2) laser annealing treatment is carried out on the surface of the formed silicon-nickel alloy layer, so that ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate; by adopting the method disclosed by the invention, not only can the precipitation of carbon be effectively reduced and the particle size of the precipitated carbon be reduced, but also good ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate, and the specific contact resistivity is relatively low.

The invention relates to the technical field of automatic control, and discloses a uniformity control method and device for large-area laser annealing, and the method comprises the steps: obtaining a three-dimensional height distribution diagram of a substrate, dividing sub-regions through a self-adaptive segmentation algorithm, and obtaining a height mean value and boundary coordinates; and calculating a focal length adjustment amount according to the height mean value to generate a focus parameter table. And through laser test comparison, dynamic focusing is carried out until the focus offset is smaller than a threshold value, and corrected focus data are obtained. Energy transition features are extracted, and a scanning path is generated with minimum energy gradient constraints. And controlling the laser beam according to the path, collecting the energy distribution signal, detecting the initial annealing depth, adjusting the sub-region laser parameters which do not reach the consistency, smoothing the annealing characteristics of the edge region, and generating a control instruction which meets the uniform tolerance. According to the method, the height distribution of the whole area of the substrate is measured, the substrate is divided into different sub-areas, energy transition between the sub-areas is smoothed, and uniform control over laser annealing is achieved.

The invention provides a preparation process of a TOPCon battery and the TOPCon battery, and particularly relates to the technical field of solar battery preparation. According to the preparation process, laser grooving, laser annealing, acid pickling, grid line electroplating and light injection are sequentially carried out on a TOPCon blue diaphragm to obtain the TOPCon battery. According to the preparation process of the TOPCon battery provided by the invention, the laser annealing process is introduced after the laser grooving and before the acid pickling, and the damaged area of the battery piece is accurately repaired, so that the purpose of repairing the damage is achieved, the non-damaged area is not influenced, and crystal defects possibly generated in the laser grooving process are reduced, thereby reducing the compound loss of the battery and improving the reliability of the battery. The efficiency of the battery is improved; meanwhile, laser annealing improves the passivation effect of tunnel oxide and the quality of a contact interface between a cell substrate and metal, reduces the surface recombination rate, and improves the contact resistance, thereby improving the open-circuit voltage (Uoc) and fill factor (FF) of the cell.

The utility model discloses a pinch roller assembly capable of realizing edge rolling operation of a high-strength steel plate workpiece, which comprises a laser heating mirror group for pre-softening a high-strength steel plate to be subjected to edge rolling operation, a rolling device for carrying out edge rolling operation on the pre-softened high-strength steel plate, and a servo articulated arm for connecting the laser heating mirror group and the pre-rolling device, therefore, the laser lens group obtains appropriate heating light spots and orientations relative to the edge rolling head according to the angle and position conditions. According to the pressing wheel assembly, on one hand, laser of the laser heating mirror set is adopted for heating a local area of a high-strength steel plate, then the edge rolling effect is achieved, then the rolling force in the edge rolling process is reduced, and the laser mirror set can adjust the angle and position conditions relative to an edge rolling head so as to obtain appropriate heating light spots and orientation; and on the other hand, the laser heating mirror set and the rolling device can be jointly installed on the mechanical arm by means of the servo articulated arm, and synchronization of laser annealing and rolling operation is achieved.

Methods, systems, and apparatuses for one step formation of ohmic contacts and Schottky contacts for SiC power devices by using laser annealing are provided. An SiC power device may include a back-side ohmic contact, a n+ substrate, a n- epitaxial layer, one or more p+ regions, one or more carbon layers, one or more ohmic contacts, and a Schottky contact. The one or more ohmic contacts and Schottky contact may be formed in a one step operation that may include laser annealing. During manufacturing, a metallization layer applied above the carbon layers and n-epitaxial layer may form the ohmic contacts and Schottky contacts when the annealing is performed.

A forming method of a semiconductor structure comprises the steps that a substrate is provided, target layers are formed on the substrate and extend in the same direction, or the target layers comprise first target layers extending in the first direction and arranged at intervals in the second direction and second target layers extending in the second direction and arranged at intervals in the first direction; the target layers are subjected to laser annealing treatment in a laser beam scanning mode, when the target layers extend in the same direction, the extension direction of the projection of the initial position of the laser beam on the substrate is the same as the extension direction of the target layers, or when the target layers comprise the first target layer and the second target layer, the extension direction of the projection of the initial position of the laser beam on the substrate is the same as the extension direction of the target layers. The projection of the initial position of the laser beam on the substrate is located on the angular bisector of the included angle between the extension direction of the first target layer and the extension direction of the second target layer. According to the embodiment of the invention, the width of the overlapped part of the scanning track of the laser beam and the target layer is relatively small, so that the heating difference degree of the target layers in different areas is reduced.