213 results about "Laser annealing" patented technology

The utility model provides a calibration device, which is used for calibrating a base of laser annealing equipment, and mainly comprises at least three laser range finders, the laser range finders are arranged above the base, the at least three laser range finders are located at the same horizontal height and are not collinear, and the laser range finders are used for measuring the vertical distance between the laser range finders and the base; the plurality of adjusters are arranged on the edge of the base, and the adjusters are used for adjusting the levelness of the base; and the controller is electrically connected with the laser range finders and the plurality of adjusters respectively, and the controller controls the plurality of adjusters to adjust the levelness of the base based on the at least three vertical distances measured by the at least three laser range finders. The levelness of the base can be monitored in real time based on the laser range finder no matter whether the laser annealing equipment is executing the laser annealing process or not, the levelness of the base is adjusted in real time through the adjuster, the adjusting time of the levelness of the base can be shortened, and the adjusting efficiency can be improved.

A method and an apparatus for conformal boron doping of a three-dimensional structure. The method comprises: removing an oxide layer from a surface of a silicon-based three-dimensional (3D) substrate; forming, after removing the oxide layer, a first group of stacked films on a surface of the silicon-based three-dimensional substrate; forming a second group of stacked films on a surface of the first group of stacked films away from the silicon-based 3D substrate; depositing an aluminum oxide passivation layer on a surface of the second group of stacked films away from the first group of stacked films; and boron-doping the silicon-based 3D substrate through laser annealing or rapid thermal annealing, where the laser annealing or the rapid thermal annealing drives boron dopants, which comprises boron oxide, into the silicon-based 3D substrate via an auxiliary layer.

A laser annealing system and a laser annealing method are provided. A laser annealing system for annealing a thin film by irradiating the thin film on a substrate with a pulsed laser light, the laser annealing system comprising: a laser device for outputting the pulsed laser light; an optical system that irradiates the thin film with pulse laser light; and a processor that performs control to irradiate the same portion of the thin film with the pulsed laser light by performing burst irradiation in which a burst period in which the pulsed laser light is continuously irradiated and a suppression period in which the irradiation of the pulsed laser light is suppressed are repeated.

The invention provides a seed crystal bonding method for inhibiting back sublimation of SiC, and belongs to the technical field of silicon carbide crystal growth treatment. A laser annealing mode is adopted, laser is used as a heat source, after the laser passes through a transmission system, a laser beam with uniform energy distribution can be generated and is projected to the surface of the silicon carbide seed crystal, silicon carbide on the surface layer absorbs the energy of the laser to be melted and then decomposed into carbon and silicon, the melting point of the silicon is low, and the silicon escapes after being melted and gasified; and the left carbon can form a compact carbon film on the surface layer of the silicon carbide. The production cost is reduced, the production efficiency is improved, meanwhile, the problem of back sublimation during SiC growth is solved, and the success rate of seed crystal bonding and the SiC crystal quality are both improved.

A memory device includes alternating stacks that are laterally spaced apart from each other by lateral isolation trench fill structures, and each of the alternating stacks includes a respective vertically alternating sequence of insulating layers and electrically conductive layers, memory openings vertically extending through a respective one of the alternating stacks, memory opening fill structures located in the memory openings, where each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective vertical stack of memory elements, and a polycrystalline semiconductor source layer underlying the alternating stack and contacting bottom surfaces of the vertical semiconductor channels. Each of the lateral isolation trench fill structures includes a thermally conductive trench fill material portion that is vertically spaced from the polycrystalline semiconductor source layer by a thermally insulating material.

Techniques are provided for calibrating thermal annealing processes (e.g., laser annealing) using microfabricated resistance temperature sensors. For example, a device comprises a substrate, and a resistance temperature sensor disposed on the substrate. The resistance temperature sensor comprises a stack of alternating metal layers of a first metal and a second metal, wherein the first metal and the second metal are different types of metals.

Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.

The invention relates to the technical field of semiconductor technologies, and provides a laser annealing breakpoint supplementary scanning method and device, electronic equipment and laser annealing device.The method comprises the steps that under the condition that alarm information or abnormal information of the laser annealing technology of a target object is received, a laser is controlled to be shut down, and current position information of a motion table system is recorded; and initial position information can be provided for subsequent complementary scanning. Under the condition that the laser is determined to be shut down, the motion platform system is controlled to stop moving, and heat accumulation caused by continuous irradiation of the laser on the target object is avoided. The current position information of the motion platform system is utilized, and the breakpoint repairing formula of the laser annealing process is automatically generated in combination with the original formula of the laser annealing process, so that the generation efficiency can be improved, and the generation error can be reduced. Under the condition that the breakpoint complementary scanning signal of the target object is received, breakpoint complementary scanning is performed on the target object from the breakpoint position information of the laser annealing process of the target object by using the breakpoint complementary scanning formula, so that the accuracy of a complementary scanning result can be improved.

The utility model discloses a chuck device and laser annealing equipment. The chuck device comprises a bearing platform, the bearing platform comprises a heating component and a wafer carrying disc on the heating component, and the distance between the wafer carrying disc and the heating component is adjustable; the temperature measuring part is used for acquiring the temperature of each measuring position of the wafer loading disc or the wafer; the levelness measuring part is used for acquiring the levelness of the wafer loading disc or the wafer; the first automatic adjusting assembly is used for automatically adjusting the distance between the wafer carrying disc and the heating part according to the temperature obtained by the temperature measuring part; and the second automatic adjusting assembly automatically adjusts the levelness of the wafer carrying disc according to the levelness obtained by the levelness measuring component. According to the technical scheme, the first automatic adjusting assembly and the second automatic adjusting assembly can automatically adjust the distance and the levelness according to the temperature and the levelness, the convenience and the real-time performance of calibrating the wafer carrying disc can be improved, the process processing effect is good, and then the process processing quality can be improved.

An apparatus comprises optical apparatus, and electrical characterization apparatus. The optical apparatus and the electrical characterization apparatus comprise an integrated configuration to perform laser annealing operations for tuning junction resistances of superconducting tunnel junction devices on a quantum chip, and to perform in-situ resistance measurements to measure the junction resistances of the superconducting tunnel junction devices on the quantum chip.

The application provides a laser annealing method and system, and relates to the field of integrated circuit manufacturing. The method comprises the following steps: a first laser module is used to emit a first laser beam with a first wavelength to a wafer, and a second laser module is used to emit a second laser beam with a second wavelength to the wafer; the reflectivity of the wafer to the laser beams with the first wavelength and the second wavelength is measured, and a reflectivity ratio is obtained; the annealing temperature of the wafer is measured; according to the measured annealing temperature and a target annealing temperature, a target total power is determined, and according to the reflectivity ratio and the target total power, the power of the first laser module and the second laser module is adjusted. According to the method, the reflectivity of the wafer to the laser beams with the two wavelengths is complementary to a certain extent, so that the pattern effect can be improved, and the annealing temperature uniformity of the wafer is improved. According to the measurement results of the annealing temperature and the reflectivity, the power is adjusted, so that the annealing temperature non-uniformity of the wafer is corrected, and the annealing temperature uniformity of the wafer is further improved.

The application relates to a laser annealing device for improving a CMOS wafer shallow junction process, which comprises a laser, a beam pointing adjustment system, a beam expander, a power adjustment system, a knife edge, a third beam combiner, a beam quality analyzer, an integrating mirror, a heating disc, a motion platform, a computer, a three-color temperature thermal emission detector and a laser range finder. The power adjustment system is composed of a lambda / 2 glass and a polarizer arranged on an optical path. The laser emits light with fixed power, the power adjustment system simultaneously controls the output power and the polarization, and avoids problems such as beam quality deterioration and power stability reduction caused by laser power change; the beam quality analyzer, the three-color temperature thermal emission detector and the power adjustment system jointly form an annealing power negative feedback system, and the annealing power size and stability are controlled in real time according to the annealing area temperature feedback result.

The invention provides a method for reducing the laser annealing carbon precipitation amount of a SiC material and the SiC material. The method comprises the steps that (1) a silicon-nickel alloy layer is formed on the back face of a SiC substrate; (2) laser annealing treatment is carried out on the surface of the formed silicon-nickel alloy layer, so that ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate; by adopting the method disclosed by the invention, not only can the precipitation of carbon be effectively reduced and the particle size of the precipitated carbon be reduced, but also good ohmic contact is formed between the silicon-nickel alloy layer and the SiC substrate, and the specific contact resistivity is relatively low.

The utility model discloses a pinch roller assembly capable of realizing edge rolling operation of a high-strength steel plate workpiece, which comprises a laser heating mirror group for pre-softening a high-strength steel plate to be subjected to edge rolling operation, a rolling device for carrying out edge rolling operation on the pre-softened high-strength steel plate, and a servo articulated arm for connecting the laser heating mirror group and the pre-rolling device, therefore, the laser lens group obtains appropriate heating light spots and orientations relative to the edge rolling head according to the angle and position conditions. According to the pressing wheel assembly, on one hand, laser of the laser heating mirror set is adopted for heating a local area of a high-strength steel plate, then the edge rolling effect is achieved, then the rolling force in the edge rolling process is reduced, and the laser mirror set can adjust the angle and position conditions relative to an edge rolling head so as to obtain appropriate heating light spots and orientation; and on the other hand, the laser heating mirror set and the rolling device can be jointly installed on the mechanical arm by means of the servo articulated arm, and synchronization of laser annealing and rolling operation is achieved.

The application relates to an anti-reflection coating preparation method for high-transmittance optical lenses, and the method comprises the following steps: firstly, gradient temperature preheating and plasma gradient activation pretreatment are adopted to form an active suspension bond layer on the surface of the optical lens base, so that the film base bonding force is enhanced; secondly, a gradient refractive index stress buffer layer is deposited, so that the refractive index and the thermal expansion coefficient of the optical lens base and the multilayer film system are continuously transitioned, and the interface stress mutation is eliminated; thirdly, during the construction process of the multilayer antireflection film system, the ion beam assisted deposition process is adopted to accurately control the film layer quality; finally, an in-situ pulse laser annealing process is introduced to perform layer-by-layer stress release treatment on each film, so that the lattice residual stress is eliminated. By adopting the technical scheme, the generation of film layer microcracks and interface peeling is effectively inhibited, and the stability and service life of the wide-spectrum multilayer film system are significantly improved.

The invention provides an excimer laser annealing system and a control method thereof, and relates to the technical field of laser annealing, the excimer laser annealing system comprises a main control unit, a laser generation unit, an energy detection module, a motion platform, a substrate bearing table and a position detection module, the position detection module is used for collecting position information of the motion platform, and the energy detection module is used for collecting energy data of laser spots; the system further comprises a self-adaptive laser energy closed-loop adjustment module, a dynamic delay laser trigger module and an integrated microfluid thermal management and rapid cooling module. The self-adaptive laser energy closed-loop adjusting module is arranged, online, real-time and pixel-level uniformity compensation of laser spot energy distribution is achieved, a dynamic delay laser triggering method based on real-time position feedback is adopted, and synchronization errors caused by mechanical transmission gaps, speed fluctuation and vibration of a motion platform are effectively compensated.

The utility model relates to the technical field of strip steel processing equipment, and discloses a strip steel production line silicon steel sheet weld joint on-line laser annealing device which comprises a strip steel processing table and a sliding frame, the strip steel processing table comprises two sets of supporting frames and a front-back adjusting seat, and the two sets of supporting frames are symmetrically arranged on the two sides of the bottom of the strip steel processing table; the front-back adjusting base is arranged on one side of the top of the supporting frame, and the sliding frame comprises a moving trolley and a laser gun. Strip steel can be clamped and fixed through the pressing hydraulic cylinder, the pressing plate, the strip steel machining table and the anti-skid table, the position of the laser gun can be moved through the sliding frame and the moving trolley, and laser is emitted to the upper surface and the lower surface of a welding seam through the connecting optical fiber, the laser generator and the laser gun. The directional reconstruction of the weld structure is realized through the high-energy beam heat source, so that the stability of the strip steel weld quality is improved, the phenomenon of strip steel weld fracture is reduced, the production cost is greatly reduced, and the production efficiency is improved.

The present invention provides a laser annealing energy control method and a laser annealing apparatus. In the laser annealing energy control method, when a laser spot moves relative to a substrate with a first laser power, the laser power of the laser spot is reduced to a second laser power at a first position relative to the substrate; when the laser spot moves relative to the substrate to a second position, and then moves from the second position to a third position relative to the substrate, the laser power is increased to a third laser power; and the laser spot performs scanning annealing on the substrate with the third laser power. By moving the laser spot to the edge of the substrate and reducing the laser power, energy spike problems and chipping problems due to thermal stress at the edge of the substrate are prevented.

The invention discloses a superconducting quantum chip flip-chip bonding process, a quantum chip, a storage medium and electronic equipment. The process comprises the following steps: providing a first substrate containing a Josephson junction and a first welding spot array in a non-junction region, a corresponding second substrate and a second welding spot array; the two substrates are in inverted butt joint, so that the welding spots are matched and aligned; and carrying out local annealing and pressure welding on the aligned welding spots. According to the method, local heating is carried out on the indium column through the laser micro-area annealing technology, and the problem that a Josephson junction is heated and damaged due to the fact that traditional flip-chip bonding whole-face heating is carried out is effectively solved. And meanwhile, the shortest heating time can be shortened to 40ms, thermal stress and deformation are greatly reduced, and due to the non-contact and repeatable characteristics of laser annealing, the method is suitable for large-scale efficient production of the superconducting quantum chip, the stable performance of the device is ensured, and the manufacturing yield is improved.

The invention provides a crystallization method of an amorphous nano-film, which comprises the following steps of: depositing the amorphous nano-film in a reaction cavity by adopting an atomic layer deposition method, performing high-energy laser annealing treatment on the surface of the amorphous nano-film, and converting the amorphous state in the amorphous nano-film into a crystalline state to prepare a crystalline nano-film. According to the method disclosed by the invention, controllable preparation of a crystalline functional film is realized by introducing laser annealing treatment after ALD deposition, a crystallization method of the amorphous nano film is constructed, the problems of poor crystallinity and limited performance after ALD film formation can be effectively solved, and a reliable, efficient and controllable film preparation scheme is provided for a next-generation high-performance device.

The utility model discloses a silicon carbide wafer base of a semiconductor laser annealing machine table, which comprises a base main body, a plurality of annular vacuum grooves are arranged on the base main body, the annular vacuum grooves are concentrically arranged by taking the center of the base main body as a circle center, a plurality of linear vacuum grooves are further arranged on the base main body, and the linear vacuum grooves are arranged in a crossed manner. And the intersection of the two is the center of the base main body. According to the utility model, the plurality of annular vacuum grooves and the plurality of linear vacuum grooves are arranged, 2% point contact is changed into more than 90% surface contact, vacuum and the adsorption force to a wafer are increased, the problem of wafer displacement is improved, the heat dissipation capability of the base to the wafer is increased, and the problem of wafer breakage caused by heat accumulation is improved.

A method for forming a semiconductor structure, comprising: providing a wafer, including an isolation region and a device region; forming a device structure on the device region, the device structure including a first layer structure and a second layer structure on the first layer structure; forming an isolation structure on the wafer, the isolation structure on the isolation region and on a region outside the device structure in the device region, the device structure being inside the isolation structure; obtaining whether the second layer structure and the first layer structure are electrically failed; if the second layer structure and the first layer structure are electrically failed, obtaining a shift of the second layer structure and the first layer structure in a first direction; and performing a laser annealing process on the wafer according to the shift of the second layer structure and the first layer structure in the first direction, so as to restore the electrical connection of the second layer structure and the first layer structure. The method improves the stress condition of the semiconductor structure.

The application discloses an annealing device, a detection method thereof, an annealing equipment and an annealing process method. The annealing device of one embodiment is applied to an excimer laser annealing equipment. The annealing device comprises a bearing table used for bearing and moving a display substrate to be processed, wherein the bearing table comprises a carrier table with a long side and a short side; an annealing chamber with a cavity is arranged above the carrier table, the annealing chamber comprises a bottom wall close to one side of the carrier table and a top wall arranged opposite to the bottom wall and away from the carrier table, a slit is arranged on the bottom wall, and the slit is parallel to the long side in the extension direction of the orthographic projection of the carrier table; an optical lens group is arranged on the top wall away from the cavity and is used for transmitting a laser beam emitted by a laser emitter; and a shielding piece is arranged in the cavity and above the slit, and the orthographic projection of the bottom wall and the orthographic projection of the slit on the bottom wall form partial overlap or complete overlap.

The invention discloses a method for assisting hydrogenation of Ga2O3 by Pd and application, mainly solving the problem of damage to materials in the existing gallium oxide hydrogenation preparation process, and the method is implemented by the following steps: preparing Pd metal on a gallium oxide sample by a sputtering or electron beam evaporation method; placing the Pd / Ga2O3 sample in a closed cavity with the air pressure smaller than or equal to 10 Pa, introducing mixed gas containing 0.1%-100% of hydrogen, catalyzing the hydrogen to be decomposed and sucked into Pd crystal lattices at low temperature to obtain a Pd / Ga2O3 sample in which Pd metal adsorbs hydrogen atoms, and performing laser annealing and annealing heat treatment on the Pd / Ga2O3 sample to enable the hydrogen atoms to be diffused into gallium oxide so as to obtain the gallium oxide. A Pd / Ga2O3 sample with hydrogen atoms entering the gallium oxide is obtained; and removing Pd metal on the sample by a chemical etching or physical method to obtain the hydrogenated gallium oxide. While the doping effectiveness is improved, the hydrogenated gallium oxide is not damaged, and the method can be used for manufacturing Schottky barrier diodes, MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) and deep ultraviolet photoelectric detectors.

An apparatus includes an optical device and an electrical characterization device. The optical apparatus and the electrical characterization apparatus include an integrated configuration to perform a laser annealing operation for tuning a junction resistance of the superconducting tunnel junction device on the quantum chip, and to perform an in-situ resistance measurement to measure the junction resistance of the superconducting tunnel junction device on the quantum chip.

The invention relates to the technical field of excimer laser annealing equipment, and discloses an intelligent modulation and protection system and method for a laser and a storage medium, and the system comprises a timing unit which is used for monitoring the non-discharge shutdown time in real time; the voltage compensation module is used for presetting a time length and charging voltage attenuation characteristic correlation model; the pre-modulation execution unit is used for determining a first pulse target voltage compensation parameter according to the duration and the correlation model and injecting the first pulse target voltage compensation parameter into a high-voltage power supply charging reference; the current waveform sampling module is used for extracting the dynamic impedance characteristic quantity of the falling edge of the discharge current; the flow field stability judgment unit is used for calculating a characteristic quantity fluctuation variable coefficient; the pulse time sequence scheduling unit is used for adjusting the trigger period according to the variable coefficient to damage the acoustic oscillation coherence superposition state in the cavity, online monitoring of the uniformity of the flow field is achieved by multiplexing discharge loop characteristics, then the first pulse energy step is eliminated, and local hot spot damage, caused by discharge filamentation, of an optical assembly is avoided.

The invention relates to a method for preparing nano barium ferrite powder, in particular to a method for preparing nano barium ferrite through cooperation of laser annealing and neodymium doping. The method comprises the following steps: S1, preparing a ferrite amorphous strip from raw materials including Fe2O3, BaO, Nd2O3 and B2O3 by utilizing a smelting melt-spinning method; s2, irradiating the ferrite amorphous strip in the step S1 by using laser, and carrying out laser annealing; and S3, carrying out pickling crushing and filtering washing treatment on the annealed strip, and drying to obtain the neodymium-doped nano barium ferrite. According to the preparation method disclosed by the invention, through the synergistic effect of laser annealing and strong absorption of neodymium ions, overgrowth of crystal grains is effectively inhibited, and the particle size distribution of the nano ferrite is narrowed, so that the problems of wide particle size distribution of powder, low production efficiency and the like in the existing preparation technology are solved.

The invention discloses shaping laser annealing equipment and method for a silicon-based heterojunction cell, and the equipment comprises a laser, a light path and a quick connection assembly, the output end of the laser is fixedly connected with the light path, and the light path is fixedly connected with a beam expander. The diffraction optical element can be taken out during later maintenance, and maintenance is simple and convenient; during machining, the light path is adjusted, laser emitted by the laser can pass through the center of the diffraction optical element reflector, the diffraction optical element in the light path enables machining plane light spots to be distributed in a flat-topped light beam energy mode, the flat-topped light beam energy is concentrated, energy loss is reduced, ablation damage caused by too high local energy is avoided, and machining precision is improved. The resistivity is generally reduced after processing, optimal processing parameters exist, the resistivity is reduced by about 25% on the basis that the substrate and the transparent conductive film layer are not damaged by the shaping laser annealing process, and the processing efficiency and the annealing quality of the heterojunction cell are effectively improved.

The embodiments herein provide thermal processing apparatus. The thermal processing apparatus includes a radiation module configured to generate a line of radiation for an annealing process, a substrate support configured to receive a substrate thereon, and a translation mechanism. The substrate support includes one or more channels configured to flow a working fluid therethrough. The working fluid is configured to enable a bottom surface of the substrate disposed upon the substrate support to be cooled to a temperature of about 200°C to about -200°C during the annealing process. The translation mechanism is configured to translate the substrate support and the line of radiation relative to one another.

The invention discloses a laser annealing method, application thereof and a related device, and belongs to the field of quantum computer manufacturing. The laser annealing method comprises the following steps: heating a simulated Josephson junction by first laser to obtain a first corresponding relation between laser power and Josephson junction temperature; obtaining a second corresponding relation between the annealing temperature of the Josephson junction and the junction resistance according to a test result of the Josephson junction subjected to laser annealing by the second laser and a simulation result of the Josephson junction subjected to heating by the second laser; and according to the first corresponding relation and the second corresponding relation, selecting the working power of the first laser, and carrying out laser annealing on the Josephson junction. By means of the method, more accurate laser annealing treatment of the Josephson junction can be achieved, and therefore the junction resistance meeting the expectation is obtained.