439 results about "Heavy ion" patented technology

Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations with heavy ions such as germanium, arsenic, xenon, indium, antimony, silicon, nitrogen oxygen or carbon in accordance with a block-out mask. The distribution and small size of individual areas of such stressed structures also prevents warping or curling of even very thin substrates.

A gate electrode is formed over a semiconductor region with a gate insulating film interposed therebetween. An extended high-concentration dopant diffused layer of a first conductivity type is formed in part of the semiconductor region beside the gate electrode through diffusion of a first dopant. A pocket dopant diffused layer of a second conductivity type is formed under the extended high-concentration dopant diffused layer through diffusion of heavy ions. The pocket dopant diffused layer includes a segregated part that has been formed through segregation of the heavy ions.

A method for forming a highly activated ultra shallow ion implanted semiconductive elements for use in sub-tenth micron MOSFET technology is described. A key feature of the method is the ability to activate the implanted impurity to a highly active state without permitting the dopant to diffuse further to deepen the junction. A selected single crystalline silicon active region is first amorphized by implanting a heavy ion such as silicon or germanium. A semiconductive impurity for example boron is then implanted and activated by pulsed laser annealing whereby the pulse fluence, frequency, and duration are chosen to maintain the amorphized region just below it's melting temperature. It is found that just below the melting temperature there is sufficient local ion mobility to secure the dopant into active positions within the silicon matrix to achieve a high degree of activation with essentially no change in concentration profile. The selection of the proper laser annealing parameters is optimized by observation of the reduction of sheet resistance and concentration profile as measured on a test site. Application of the method is applied to forming a MOS FET and a CMOS device. The additional processing steps required by the invention are applied simultaneously to both n-channel and p-channel devices of the CMOS device pair.

Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations with heavy ions such as germanium, arsenic, xenon, indium, antimony, silicon, nitrogen oxygen or carbon in accordance with a block-out mask. The distribution and small size of individual areas of such stressed structures also prevents warping or curling of even very thin substrates.

The invention also relates to an a method of fabrication of an integrated circuit, the method includes altering a portion of a surface layer of a material to be polished and polishing the surface layer in a chemical mechanical polishing process. Preferably, the step of altering of the present invention includes adding an impurity to the material such as a dopant by heavy ion implantation at a concentration level of about 1x1010 ions / cm2 to about 1x1018 ions / cm2.

A radiation therapy system for heavy ions employs a rocking motion of a fan beam used to treat the patient, the fan beam having individually modulated beamlets, the rocking limited in angular extent to provide improved conformance of the dose to a tumor while shielding distal tissue from radiation.

A radiation therapy system for heavy ions employs a rocking motion of a fan beam used to treat the patient, the fan beam having individually modulated beamlets, the rocking limited in angular extent to provide improved conformance of the dose to a tumor while shielding distal tissue from radiation.

Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the stress layer and then an anneal is performed. This increases the amount of stress from the stress layer that the gate retains / memorizes thereby increasing device performance.

This application discloses a new, and useful computer implemented method and apparatus that can be used for the determination of SEU and SET disruptions in a cell or circuit, caused by ionizing particle strikes, including those caused by neutrons (cosmic rays), alpha particles or heavy ions. The method of the present invention includes a fast simulation tool (“TFIT”), which calculates the electrical effect of a particle's impact to a cell, or a circuit. The method is used to predict the soft error rate (SER) calculations and the FIT (number of failures-in-time) performance of designated test cell's design, depending on the type of particle environment specified. The method is designed to simulate the response of the cell or circuit to the stimuli caused by a particle strike. These stimuli are modeled as a “current source” placed between the drain and the source of each struck transistor.

Disclosed is an SRAM type FPGA single event upset effect simulation method. The method includes the steps that firstly, design and process parameters of a device to be simulated are acquired; secondly, a three-dimensional geometrical shape of the device is constructed through a modeling tool, and doped areas, doping concentration, discretization strategies and the like of the device are set; thirdly, the design and process parameters of the device are calibrated according to an I-V characteristic curve of the device; fourthly, a meshed device structure is generated, and the mesh is refined on a channel, the light doped area and a PN junction border; fifthly, a device-level TCAD simulation method or a device-level TCAD and circuit-level Spice hybrid simulation method is selected according to the circuit scale and practical conditions of the device; sixthly, characteristics of incident heavy ions are acquired by using a radiating particle characteristic tool to conduct calculation; seventhly, physical model parameters, simulation time, boundary conditions and the like are set, and single event effect simulation of the device is carried out through a TCAD tool; eighthly, particles different in energy are selected to be simulated again according to simulation results; ninthly, the simulation results are acquired through a simulation data analysis tool.

Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.

The present invention relates to treatment of waste electroplating solution, and is especially method of treating waste electroplating solution containing Cu, Cr, Cd, Ni and other heavy metals and recovering heavy metals. The method includes the following steps: adding water soluble great molecular weight polymer into the waste electroplating solution to form complex of heavy metal ions, ultrafiltering to obtain concentrated liquid with enriched heavy metal ions, adding sulfuric acid to the ultrafiltrate to acidify and decomplex the heavy metal ions, ulterfiltering the decomplexed solution, returning the concentrated liquid with enriched complex agent to the complexing step, treating the ultrafiltered dialysate through reverse osmosis to obtain concentrated heavy ion solution, and returning the concentrated heavy ion solution to the electroplating step.

The invention discloses a double-ion response type SERS (Surface Enhanced Raman Scattering) probe and a preparation method thereof. The probe comprises two nano particles with independent core-shell structures, wherein a carrier nano particle comprises four layers of core-shell structures; the four layers of core-shell structures are as follows: the innermost layer is made of Fe3O4 magnetic nano balls, a layer of silicon dioxide is coated outside the innermost layer, the second-outer layer is a gold foil shell layer, and the outermost layer is an oligonucleotide coating layer; an object nano particle comprises two layers of core-shell structure; the two layers of core-shell structure are as follows: the inner core is made of Raman molecule marked gold nano-balls, and a shell is an oligonucleotide coating layer. Due to the adoption of a specific base sequence in the oligonucleotide coating layer, the identify and SERS trace detection on two metal ions, namely silver / mercury, in an environment solution can be performed at the same time; furthermore, under the action of an external magnetic field, the probe and the obtained silver / mercury ions can be rapidly separated from an initial environment solution system, and therefore, the function of purifying the environment is realized.

The invention discloses a fixing method of heavy ion through microbe, which comprises the following steps: inoculating Bacillus pasteurii in the LB culture medium based on aquacare as base; vibrating under 25-37 deg.c; culturing for 12-24h; adding bacteria suspension in the soil or solution with heavy metal ion as well as Ca2+ solution to produce composite floccule body of microbe-heavy metal; generating insoluble carbonate.

The present invention discloses a quantitative analysis method for a heavy-ion single-particle multi-bit upset effect of a device. The method comprises: selecting a type of heavy ions, setting an appropriate fluence rate according to a corresponding principle to perform radiation on a cover opening device, recording logic addresses and data of storage units, which perform single-particle upset, of the device by a test system, and stopping radiation when reaching an estimated single-particle upset number or the maximum ion fluence; establishing a mapping relationship from the logic addresses of the device to physical addresses, and according to a physical bit map, carrying out statistics on a number of single-particle upsets, a number of single-particle unit upset events and a number of multi-bit upset events; and by combining ion fluence, calculating parameters such as probabilities of the single-particle unit upset events and the multi-bit upset events, a multi-bit upset mean, a multi-bit upset cross section and the like. According to the quantitative analysis method for the heavy-ion single-particle multi-bit upset effect of the device, technical support and information can be provided for an anti-single-particle-upset reinforcement design of the device, and effectiveness of a reinforcement technology is verified and evaluated.

A semiconductor fabrication process and apparatus are provided for forming passive devices, such as a fuse (93) or resistor (95), in an active substrate region (103) by using heavy ion implantation (30) and annealing (40) to selectively form polycrystalline structures (42, 44) from a monocrystalline active layer (103), while retaining the single crystalline regions in the active layer (103) for use in forming active devices, such as NMOS and / or PMOS transistors (94). As disclosed, fuse structures (93) may be fabricated by forming silicide (90) in an upper region of the polycrystalline structure (42), while resistor structures (95) may be simultaneously formed from polycrystalline structure (44) which is selectively masked during silicide formation.

A manufacturing method of a GaN Schottky diode comprises the steps: providing a substrate; depositing a nucleating layer and / or a buffering layer on the substrate; depositing a heavy-doping n-type GaN layer on the nucleating layer and / or the buffering layer, and depositing a light-doping n-type GaN layer on the heavy-doping n-type GaN layer; arranging a plurality of p-type heavy-ion-doping GaN regions on the surface of the light-doping n-type GaN layer; depositing an insulation layer or a medium layer on the surface of the light-doping n-type GaN layer; defining a Schottky electrode region on the insulation layer, and trepanning the Schottky electrode region; depositing a Schottky electrode on the trepanned Schottky electrode region, wherein the Schottky electrode makes contact with the surface of the light-doping n-type GaN layer; defining an ohmic electrode region on the substrate, and trepanning the ohmic electrode region; depositing an ohmic electrode in the trepanned ohmic electrode region, wherein the ohmic electrode makes contact with the heavy-doping n-type GaN layer. The forward starting voltage of the Schottky diode is small, and a larger current can pass through in the forward direction; a leaked current in the backward direction is small, and larger voltage and power can be borne in the backward direction.

Methods (70) are described for fabricating shallow and abrupt gradient drain extensions for MOS type transistors, in which a solid phase epitaxial recrystallization is performed within the drain extensions utilizing a laser SPER annealing process in the manufacture of semiconductor products. One method (70) includes a preamorphizing process (74) of implanting a heavy ion species such as Germanium deep into an extension region of a substrate adjacent a channel region of the substrate to form a deep amorphized region, then implanting boron or another such dopant species into an extension region of the substrate adjacent the channel region. The implanted dopant is then preannealed (78) at a low temperature to set the junction depth and doping concentration. The extensions and / or the deep source / drain regions are subsequently annealed (84) with a laser at a high temperature providing a solid phase epitaxial recrystallization in the regions proximate the channel region to achieve ultra high doping concentrations and activation levels with an abrupt gradient.

A single-pass heavy-ion fusion system includes a new arrangement of current multiplying processes that employs multiple isotopes to achieve the desired effect of distributing the task of amplifying the current among all the various processes, to relieve stress on any one process, and to increase margin of safety for assured ICF (inertial confinement fusion) power production. Energy and power of the ignition-driver pulses are greatly increased, thus increasing intensity of target heating and rendering reliable ignition readily attainable. The present design eliminates the need for storage rings. Further innovations are to give the HIF (heavy ion fusion) Driver flexibility to drive multiple chambers in the most general case of different total distances between the linac output and each of the various chambers. Using multiple chambers steeply decreases the pro-rata capital investment and operating costs per power production unit, in turn decreasing the cost of power to users.

The invention relates to a preparation method of heavy metal ion enrichment cellulosic material; in the method, natural cellulosic material fiber is adopted as the matrix, tetramethyl silane is take as the precursor and the surface sol-gel method is utilized to deposit silica film on the surface of the filter paper fiber; subsequently, ligand molecule monolayer sensitive to copper ion and mercury ion are introduced through self-assembly to obtain the heavy metal ion enrichment cellulosic material; the heavy metal ion solution can be simply filtered by the material prepared by the method of the invention to realize the absorption effect. The heavy metal ion enrichment cellulosic material has superior heavy metal ion enrichment performance, broad raw material source range, low price, simple preparation method, high absorption speed, high sensitiveness and can realize the treatment of waste water containing heavy ions simply, rapidly and economically.

Heavy ions are ejected earlier than light ions sequentially at almost zero energy and they are accelerated at a fixed voltage so as to be guided to a pusher of a TOF spectrometer. After ions are ejected in a procedure of giving an electric field gradient to an ion trap and linearly decreasing its RF voltage, a condition of spatially focusing ions having all mass numbers of a single point on the pusher is found. The focused ions are vertically accelerated using the pusher to perform the TOF mass spectrometry.

The invention relates to a new application of low molecular citrus pectin, in particular to the application of low molecular citrus pectin for treating and preventing lead and heavy metal poisoning in prepared medicines, foods and health care products. The low molecular citrus pectin is a compound prepared from soluble dietary fiber and galacturonic acid, the polysaccharide derivative is used as a metal ion absorbent (chelating agent), has absorption action on heavy metal ions, can remove heavy ions, such as Zn2+, Cu2+, Cd2+, Ag+, Cr3+, Ni2+, Hg2+, Pb2+ and the like. The low molecular citrus pectin is different from common chemical chelating agents; proved by animal and clinic experiments, lead, mercury and arsenic are discharged out of human bodies during toxin discharge, and the key level of calcium, magnesium, zinc or other minerals can not be influenced. The natural chelating function of the low molecular citrus pectin is a most ideal and successful solution for heavy metal pollution in the human body at present. Thus, the low molecular citrus pectin has the function of preventing various diseases and especially has special functions of clearing away harmful cells and discharging toxins in the human body.

The present invention provides a germanium-silicon heterojunction transistor single event effect test method based on heavy ion microbeam irradiation. The problems are mainly solved that a damaging mechanism cannot be directly represented and a sensitive region cannot be accurately located in the prior art. The implementation scheme of the method comprises the steps of: selecting a germanium-silicon heterojunction transistor sample to test electrical properties of the germanium-silicon heterojunction transistor sample; making and testing a PCB test board for irradiation, and performing de-encapsulation processing of a germanium-silicon heterojunction transistor device prior to test; assembling an irradiation platform; setting a test condition of a heavy ion microbeam irradiation test; performing beam ejecting position location of a heavy ion microbeam irradiation device; setting the type and the weight of incident heavy ions; developing the heavy ion microbeam irradiation test; and recoding and processing all the test data, and obtaining a single event effect sensitive region. The method provided by the invention can accurately locate the germanium-silicon heterojunction transistorsingle event effect sensitive region, can improve the experiment precision, can reduce the test cost and can be used for assessment of the astronavigation anti-radiation capacity for microelectronicdevices.

A process for treating the fly ash generated by incinerating garbage and preventing the release of heavy metal and dioxin includes such steps as mixing with water, adding the solution of inorganic chemical, stirring, heavy ion reaction to generate stable compound, regulating pH=8-11.5, removing excessive water, mixing with cement, shaping, and curing to obtain building material.

Methods for designing a laser-accelerated ion beam are disclosed. The methods include modeling a system including a heavy ion layer, an electric field, and high energy light positive ions having a maximum light positive ion energy, correlating physical parameters of the heavy ion layer, the electric field, and the maximum light positive ion energy using the model, and varying the parameters of the heavy ion layer to optimize the energy distribution of the high energy light positive ions. One method includes analyzing the acceleration of light positive ions, for example protons, through interaction of a high-power laser pulse with a double-layer target using two-dimensional particle-in-cell (PIC) simulations and a one-dimensional analytical model. The maximum energy acquired by the accelerated light positive ions, e.g., protons, in this model depends on the physical characteristics of the heavy-ion layer—the electron-ion mass ratio and effective charge state of the ions. The hydrodynamic equations for both electron and heavy ion species solved and the test-particle approximation for the protons is applied. It was found that the heavy ion motion modifies the longitudinal electric field distribution, thus changing the acceleration conditions for the light positive ions.

The present invention provides a pulsed neutron generator. In a high vacuum and high pressure ceramic tube, when a trigger pulse is added between the source trigger pole and cathode of vacuum arc ion, the deuterium atom is ionized and the initial plasma is diffused, such that the anode and the cathode of the ion source is conducted, the arc current is formed, and the high density plasma is generated. Under the action of accelerating the high pressure, the deuterium ion beam interacts with the tritium titanium target, the deuterium tritium reaction produces, and the pulsed neutron with the energy of 14 MeV is generated. A circular magnetic field is set up at the lead pole of the vacuum arc ion source, which can focus on the formation of the deuterium ion, increase the deuterium ion beam to the target, improve the pulsed neutron yield; The combination of a dry pump, a molecular pump, an ion pump and an air pump is used to improve the vacuum degree of the system, and reduce the loss of deuterium ion beam in the transmission process. The aluminum film with the thickness of 400 nm is coated on the surface of the tritium titanium target, which prevents the heavy ion from reaching the tritium target, and reduces the damage of the target.

The invention provides a method for a simulation test about the comprehensive space radiation effect of a surface function material for a spacecraft, which belongs to the field of space environment engineering and can be applied to evaluation on the space environment effect of the surface function material for the spacecraft. When the spacecraft is in an on-orbit working, most surface function materials are directly exposed in the on-orbit environment, and the influence of the radiation environment is more severe. The surface function materials are irradiated by electrons, protons, alpha particles and heavy ions with wider energy and flux, and the radiation of all the particles can lead the performances of the surface function materials to be deteriorated. In a long-life design of a satellite, the capability of bearing the influence of the environment with comprehensive space radiation needs to be inspected. The method provided by the invention has an important significance in evaluation on the ground simulation test about the orbit radiation effect of the surface function material for the spacecraft.

The invention discloses a method for adsorbing heavy metals by using a three-dimensional compound consisting of a graphene sheet and magnetotactic bacteria. The method comprises the following steps of: fully mixing the graphene sheet and the magnetotactic bacteria in a liquid phase system to form a graphene sheet-magnetotactic bacteria three-dimensional compound; adding the graphene sheet-magnetotactic bacteria three-dimensional compound into sewage containing heavy metal ions; fully mixing to reach adsorption balance; and separating the graphene sheet-magnetotactic bacteria three-dimensionalcompound out by using an external magnetic field to realize the purification of sewage. The method has the advantages of simple process, capability of simultaneously treating sewage containing high-concentration complex heavy ion components such as Au<3+>, Fe<3+>, Ni<2+>, Cu<2+>, Pb<2+>, Cr<2+> and the like at the removing rate over 90 percent, recycling of the graphene sheet-magnetotactic bacteria three-dimensional compound through a magnetic field, low cost, environmental friendliness and no secondary pollution.

The invention relates to the technical field of design methods for a magnetic focusing structure of a medical electrified particle synchrotron, in particular to a heavy ion or proton synchrotron with a medical 45-degree deflection magnetic focusing structure. The synchrotron comprises eight deflection dipole magnets and eight synchrotron linear sections, wherein the eight deflection dipole magnets and the eight synchrotron linear sections are alternatively connected in turn through an annular vacuum pipeline; the eight deflection dipole magnet is 45-degree deflection dipole magnet; and the 45-degree deflection magnetic focusing structure comprises the annular vacuum pipeline in which electrified particles run and a magnet element, an acceleration element and an injection and extraction element which are arranged on the annular pipeline. The synchrotron has the advantages of effectively utilizing the space of the synchrotron, realizing the function of the medical heavy ion / proton synchrotron by arranging as few elements as possible, reducing manufacturing cost and installation space to the maximum extent, improving therapeutic efficiency and lowering treatment cost.