166 results about "Heavy ion" patented technology

The invention belongs to the technical field of radiotherapy dose simulation measurement, and provides a heavy ion fixed machine head radiotherapy dose simulation measurement method and system. The method comprises the following steps: firstly, in a solid water model, according to a layering and key area encryption sampling principle, carrying out finite point and / or cutting layer dose measurement to obtain sparse dose data and a sampling position; inputting the three-dimensional dose distribution and a sampling position mask into a coding-decoding structure and a mask perception neural network with an attention mechanism in a decoding stage, and outputting complete three-dimensional dose distribution; and finally, outputting a simulation result containing dose distribution and uncertainty distribution. The method improves dose reconstruction precision and clinical quality control efficiency, and is suitable for dose verification before heavy ion radiotherapy.

The invention is suitable for the technical field of biological materials, and provides an embryo heavy ion track acquisition method based on a biological stack, and the method comprises the steps: carrying out the preprocessing of an initial biological stack, obtaining a target biological stack, obtaining an initial scanning image of the target biological stack, and scanning the target biological stack, and obtaining an initial scanning image of the target biological stack; marking the initial scanning image for the first time based on the central position of the seed embryo to obtain a target scanning image; fitting the target scanning image with the detection sheet of the target biological stack to obtain an initial fitting piece, and marking on the non-contact surface of the initial fitting piece for the second time according to the central position of the embryo to obtain a target fitting piece; scanning the target fitting piece through a preset laser confocal microscope to obtain an imaging picture of the seed embryo, and cutting an actual projection of the seed embryo on a preset projection contour based on the imaging picture and the central position of the seed embryo in the imaging picture; and identifying the heavy ion track of the seed embryo according to the actual projection.

The invention relates to the technical field of particle track microscopic analysis, in particular to a heavy ion track positioning method suitable for tiny seeds. The method mainly comprises the following steps of: scanning biological stacks by using a scanner, processing a scanning image by using drawing software to obtain an image of a single seed hole, acquiring position information of seeds in the seed holes, scanning a CR39 detection sheet by using a VHX microscope, acquiring passive detection information of each seed hole, and superposing the passive detection information with the image processed by the drawing software to obtain a final detection result. The radiation detection condition at the arabidopsis thaliana seeds is analyzed, and data conversion is further carried out to obtain various radiation information of individuals aiming at the arabidopsis thaliana seeds. The method is applicable to batch, rapid and high-precision processing of returned detection piece data. And in the aspect of the batch degree, the whole process is batch processing, and batch pictures and data can be automatically output by utilizing related software, so that the manual participation degree is reduced.

The invention discloses a non-interception type detector for measuring the beam position and the cross section of proton / heavy ion radiotherapy equipment, and belongs to the technical field of nuclear medicine and electronics crossing. Secondary particles (electrons or ions) obtained after ionization reaction of high-energy protons / heavy ions and residual gas molecules are used as signals, the signals are amplified to reconstruct the original position and cross section distribution of a beam, and the detector is a completely non-interception type detector and can be used as long-term online measurement equipment. According to the invention, the structure of the detector is systematically designed and optimized aiming at the position and section measurement of an extremely weak beam in proton / heavy ion radiotherapy equipment, a test is carried out on an experimental platform, a clear signal image can be obtained, the structure is compact, the performance is good, the work is stable and reliable, and the cost is low. The method is of great significance to debugging, operation and maintenance of proton / heavy ion radiotherapy equipment.

The invention belongs to the technical field of radiation effect and radiation hardening of semiconductor devices and integrated circuits, and particularly relates to a single event effect laser simulation system based on Bessel beam shaping. A Bessel beam shaping and focusing module based on an axon lens is introduced and composed of the axon lens and two lenses, namely a single lens and a focusing lens, a Gaussian beam of an incident beam is shaped into a quasi-Bessel beam, and the quasi-Bessel beam is utilized to irradiate a semiconductor device to be detected. The axial distribution of the light beam is kept unchanged in a range of hundreds of microns, and the focusing breaking through the diffraction limit is realized in the radial distribution, so that the effect closer to the heavy ion charge deposition track is generated. The technology can solve the problem that a multilayer structure device, a thick sensitive region device and a wide forbidden band device are difficult to test through traditional laser simulation, and has important practical value for promoting laser simulation of the single event effect.

The utility model provides a power supply detection device for a proton heavy ion accelerator. The power supply detection device comprises a measuring probe and a controller module. The input end of the measuring probe is electrically connected to the output end of the power supply equipment so as to measure the output voltage of the power supply equipment; the output end of the measuring probe is electrically connected to the controller module and inputs the output voltage of the power supply equipment to the controller module, and the controller module controls the measuring probe to measure the output voltage of the power supply equipment according to a preset frequency. According to the scheme, the troubleshooting time of the beam fault caused by the unstable power supply is greatly shortened, the problem is found in advance when the power supply function is unstable, the replacement time is set to the non-treatment time, and downtime caused by thorough damage of the power supply is avoided.

The invention relates to a pulse laser irradiation experimental device. Comprising an optical parameter measurement platform, an optical path coupling module, a photoelectric test module, an electrical test platform, a first control system and a second control system, the first control system is used for fitting the elliptic polarization state change parameters with a scanning model to obtain the refractive index and the extinction coefficient of the single-layer film; the second control system is used for inputting the refractive index, the extinction coefficient, the reflectivity and the transmissivity of the thin film into a device incidence model to calculate effective pulse laser energy when pulse laser with different wavelengths penetrates through each layer of thin film to reach an active region in the to-be-measured wide bandgap power device, and obtaining an equivalent heavy ion LET value according to the effective pulse laser energy; and the light path coupling module, the photoelectric test module and the electrical test platform are controlled to carry out closed-loop adjustment on pulse laser energy. According to the invention, accurate control and adjustment of pulse laser energy are realized.

The invention discloses an anti-radiation SPH-14T SRAM (Static Random Access Memory) circuit and an anti-radiation SPH-14T SRAM chip combining polarity reinforcement and source isolation technologies, which are designed by adopting a polarity reinforcement principle that transistors of the same type have a single flip characteristic under spatial heavy ion bombardment, and the stability of redundant nodes S0 and S1 is ensured by utilizing the design method. And therefore, the anti-overturning capability of nodes in the circuit is enhanced. Secondly, the stability of a node Q and a node QB is improved through multiplexing of a pull-up PMOS tube and the source isolation technology, meanwhile, the circuit uses four transmission transistors for reading and writing, in the data writing process, a bit line writes data into an internal node QQB and an internal node S0S1 at the same time through transmission transistors N7, N8, N9 and N10, so that the data is more easily written into a storage node, and the stability of the storage node is improved. Therefore, the design greatly improves the data writing speed and noise margin (SNM) of the unit, and a simulation result shows that compared with the existing five SRAM units, the SPH-14T unit disclosed by the invention has more prominent advantages in the writing speed aspect and the noise margin aspect compared with other five SRAMs.

The invention belongs to the technical field of photoelectric devices, and relates to a method for widening the detection wave band of a two-dimensional TMDC heterojunction photoelectric device and the photoelectric device. The TMDC heterojunction is doped through heavy ion irradiation, so that the light absorption wave band of the TMDC heterojunction is expanded to a solar blind ultraviolet range. The method overcomes the defects that impurities are easy to introduce, the uniformity is poor, the position is uncontrollable and the like in the doping process of other methods, the advantages that ions provided by an accelerator are high in purity, controllable in energy, controllable in number, accurate and controllable in position and the like are utilized, the defect that different concentrations can be doped in different areas of a device according to needs by adjusting the incident energy, the position and the irradiation time of the ions, and the device is high in doping efficiency. The photoresponse of the device is regulated and controlled through defect engineering, and the detection band of the device is widened to the deep ultraviolet band.

A radiation dose quantification method and system, the method comprising: detecting, with one or more detectors with respective sensitive volumes, gamma-rays emitted as a result of capture of neutrons by a composition in a subject subjected to an irradiation program, the composition comprising one or more thermal neutron capture agents, the neutrons having been generated by non-elastic collisions between a primary beam of particles and nuclei in the subject, wherein the particles consist of any one or more of protons, deuterons, tritons and heavy ions, the irradiation program comprises at least one period of irradiation with a beam duration that includes beam-on periods and beam-off periods; applying at least one predefined energy window or filter configured to accept only detection events in the one or more detectors resulting from gamma-rays with an energy indicative of selected gamma-rays arising from the capture of thermal neutrons by the one or more thermal neutron capture agents, wherein the thermal neutrons are neutrons with energies below approximately 0.4 eV; applying a timing window configured to reject or ignore detection events in the one or more detectors resulting from at least prompt gamma-rays produced in non-neutron capture events; and determining the radiation dose of neutron radiation received by the subject during the irradiation program from at least the accepted detection events or determining a dose map of the radiation received by the subject from at least the accepted detection events.

The utility model discloses a support for replacing a treatment bed, and relates to the field of proton and heavy ion therapeutic apparatuses, the support comprises a bed board, the two ends of the bed board are respectively provided with a supporting table, a connecting plate is arranged above the supporting tables, the connecting plate is located between the supporting tables and the bed board, and a bearing plate is arranged between the bed board and the connecting plate. A limiting frame is fixed to the supporting table, the connecting plate slides in the limiting frame, a height coarse adjustment assembly is arranged between the supporting table and the connecting plate, a height fine adjustment assembly is arranged between the connecting plate and the bearing plate, and horizontal adjustment mechanisms are arranged at the two ends of the bearing plate. When the treatment bed breaks down, the bed plate can replace the treatment bed. The bed board is finally adjusted to the accurate position through the height coarse adjustment assembly and the height fine adjustment assembly. After height adjustment is completed, the horizontal position of the bed board can be adjusted through the horizontal adjusting mechanism, and smooth treatment is guaranteed.

The present invention relates to the field of space radiation effects and reinforcement technology, specifically to a single-particle upset recovery analysis method that combines experiments and simulations. This method addresses the shortcomings of existing numerical simulations of single-particle upset recovery, which fail to consider the coupling effects of surrounding storage cells and cannot accurately predict the impact of upset recovery on multi-cell upsets. Furthermore, due to the random location of single-particle upset recovery in the storage array and its short duration, the response process is difficult to directly capture experimentally. This combined experimental and simulation single-particle upset recovery analysis method organically combines experiments and simulations, leveraging the complementary advantages of heavy ion broad-beam experiments, heavy ion microbeam experiments, and numerical simulations to more comprehensively and meticulously reveal the mechanisms and influencing factors of single-particle upset recovery.

The application discloses a preparation method of a heavy ion microporous composite filtration membrane and application thereof, and relates to the technical field of membrane separation preparation, wherein the preparation method comprises the following steps: step one, compounding a nuclear pore membrane on the upper side of a first base material; step two, preparing a casting solution, and then casting the casting solution on a second base material to form a nascent membrane after scraping; step three, performing a blowing operation on the nascent membrane to obtain a pre-phase separation membrane; step four, immersing the pre-phase separation membrane in a coagulation bath to perform a solidification operation, and obtaining a solidified membrane; step five, performing an area stretching operation on the solidified membrane, and then performing a cleaning operation in pure water, and then performing a drying operation after the cleaning operation to obtain a microfiltration membrane; and step six, compounding the microfiltration membrane on the upper side of the nuclear pore membrane to obtain a composite filtration membrane. The preparation method of the heavy ion microporous composite filtration membrane improves the liquid stopping effect, filtration flux and flux stability of the filtration membrane by compounding the first base material, the nuclear pore membrane and the microfiltration membrane.

This invention provides a quadruple ion-coupled erosion-protected concrete and its preparation method, relating to the field of special concrete materials technology. The concrete comprises basic components and functional admixtures. The basic components include cementitious materials, aggregates, and water. The functional admixtures include a coupling ion locking agent, a dual-interface film-forming aid, and a salt-expansion-resistant crack-resistant agent. The coupling ion locking agent includes calcined calcium aluminum hydrotalcite and diethylenetriamine pentacarboxylate; the dual-interface film-forming aid includes isobutyltriethoxysilane and lithium silicate; and the salt-expansion-resistant crack-resistant agent includes calcium sulfoaluminate expansion agent and lightly calcined magnesium oxide. The three admixtures work synergistically from three dimensions: active ion solidification, in-situ interface shielding, and full-cycle volume compensation, achieving simultaneous solidification of the four erosion ions, continuous blocking of penetration channels, and effective offsetting of salt crystallization expansion stress. This ensures the long-term safe service of the concrete under extreme conditions of high water pressure, high humidity, alternating wet and dry conditions, and multi-ion coupling erosion.

The application discloses a trench gate power MOSFET device with anti-single event burnout reinforcement and a preparation method thereof, which comprises the following steps: etching a deep trench at a center position of the device and forming a P-type shielding area and depositing N-type polysilicon; forming a current expansion layer between a boron-doped area and an N-type drift area by means of ion implantation; and forming a P-type high-concentration doped area and an N-type high-concentration source area above the boron-doped area by means of ion implantation. According to the technical scheme, the internal electric field of the device can be modulated, the electric field distribution on the heavy ion incident track is smoother, the instantaneous power density of the device is reduced, the local high temperature is reduced, the trench oxide layer is protected from high temperature, the forward conduction capability of the device is improved, and the anti-single event burnout capability of the device can be remarkably improved without sacrificing the basic electrical characteristics of the device.

A method for fabricating a nonlinear optical waveguide with gradient refractive index distribution, in which a nonlinear optical crystal is prepared; a type of first heavy ions, a type of second heavy ions and parameters related to an irradiation process are determined; the first heavy ions are accelerated to generate a first ion beam; the nonlinear optical crystal is bombarded with the first ion beam to obtain a primary processed crystal; the second heavy ions are accelerated to generate a second ion beam; the primary processed crystal is bombarded with the second ion beam to obtain a secondary processed crystal; and the secondary processed crystal is segmented to obtain the desired optical waveguide.

The invention belongs to the technical field of material preparation, and particularly relates to micro-pit preparation for a single-molecule detection chip substrate and a single-molecule detection chip. The method provided by the invention mainly comprises the following steps: accelerating heavy ions by using an accelerator, bombarding a base material by using the accelerated heavy ions, etching the base material by using an etching agent added with a corrosion inhibitor after the heavy ions damage the base material to obtain micro-pits with specific diameters and depths, and cleaning and drying the etched sample. According to the method, the substrate is impacted in an accelerated mode through heavy ions, the micro-pits are prepared, the limitation of a traditional photoetching technology is broken through, the patterns of the micro-pits are defined directly through heavy ion bombardment, a mask is not needed, the material cost is reduced, production interruption and extra cost caused by damage of the mask are avoided, the machining process is relatively simple, and the method is suitable for large-scale popularization and application. Multiple complex photoetching and etching steps are not needed, the production efficiency is greatly improved, the production period is shortened, and the production cost is reduced.

A method for evaluating radiation resistance of an analog semiconductor device under test is provided. The method for evaluating radiation resistance of the analog semiconductor device under test comprises the steps of: providing the analog semiconductor device under test to a heavy ion device to obtain a first graph representing a first cross-sectional value of the analog semiconductor device under test according to a linear energy transfer (LET) value of a base section; providing the analog semiconductor device under test to a pulse laser device to derive a second cross-sectional value of the semiconductor device under test according to a laser energy value, deriving an equivalent linear energy transfer value using the second cross-sectional value, and obtaining a second graph representing the second cross-sectional value according to the equivalent linear energy transfer value; and obtaining an integrated graph by combining the first graph and the second graph, and deriving the first cross-sectional value of the remaining section excluding the base section from the integrated graph, wherein the base section may be a range of the linear energy transfer value that the heavy ion device can provide due to the characteristics of the heavy ion device.

The present invention relates to a single particle effect simulation irradiation device based on a heavy ion cyclotron, belonging to the technical field of radiation hardening. The device includes a mixed beam switching module, a beam line beam expansion module, a diagnostic target chamber and an irradiation target chamber. A beam current on-line monitoring module is provided in the diagnostic target chamber, and a beam current measurement module is provided in the irradiation target chamber. They are all connected through pipelines. The mixed beam switching module is used to quickly provide a single ion beam current. After being expanded by the beam line beam expansion module, a large-area uniform single ion beam current is obtained. The expanded single ion beam current is irradiated onto the device under test in the irradiation target chamber. During the irradiation process, the fluence / fluence rate and beam spot uniformity of the single ion beam current are monitored by the beam current on-line monitoring module, and the beam current energy and fluence rate are measured by the beam current measurement module. Using the device provided by the present invention can solve problems such as the generation of a large-area uniform beam spot, extraction to the irradiation target chamber for irradiation, and rapid sample change.

An arylboron compound, its preparation method, applications, and pharmaceutical compositions are disclosed for tumor imaging. The compound of formula (I) exhibits high fluorescence quantum efficiency through intramolecular charge transfer. The compound of formula (I) synthesized in this invention can be linked to different antibodies via Q3 at certain concentrations, allowing for precise targeting of corresponding tumors based on the antibody. This type of boron drug formulation can be used in boron neutron capture therapy to kill tumor cells. It exhibits better killing effects; the compound of formula (I) targets tumor cells through antigen-antibody interaction. After the boron-10-containing drug accumulates at the tumor site, neutron radiation triggers a nuclear reaction releasing alpha particles and... 7 Lithium particles kill cells; the range of these two particles is approximately 10 μm. High-energy-density heavy ions disrupt the DNA double helix structure in tumor cells, causing irreparable cell death. Simultaneously, the 10 μm distance avoids damage to normal cells and tissues.

An example system for magnetic resonance imaging (MRI) guided proton therapy includes a source configured to generate and emit a heavy ion or proton beam; and an MRI assembly including at least one segmented coil magnet comprising a plurality of windings, where the plurality of windings of the at least one segmented coil magnet include a medium or high-temperature superconductor such that the at least one segmented coil magnet does not require a cryogenic liquid for cooling. An example magnet for MRI proton therapy includes field coils and shield coils arranged in Helmholtz coil pairs, where the field coils and the shield coils include a medium or high-temperature superconductor so the magnet does not require cryogenic liquid cooling, and where the field coils and the shield coils form a central opening through which a heavy ion or proton beam is directed during proton therapy.

The present invention provides a method for detecting single-cell gene sequence variation in rice and its application, which belongs to the field of agricultural technology. The method of the present invention mainly includes three aspects: sampling, sequencing and bioinformatics analysis, wherein the sampling is to obtain a single rice microspore sex cell. The present invention successfully isolates a single rice microspore sex cell, and improves the defects of the existing rice single-cell variation detection technology process, such as weak integrity and detection consistency that need to be improved. In addition, the authenticity of the mutation site is identified and confirmed by heavy ion mutagenesis technology. The method of the present invention broadens the source range of rice single-cell mutagenic materials, and provides new ideas and methods for creating more diverse breeding materials and conducting more efficient mutagenic breeding. At the same time, microspore sex cells serve as male gametes, and the mutations carried in the genome can be passed into the offspring through hybridization, which can realize the inheritance and fixation of mutations, and also provide a way to quickly utilize excellent mutant genes.

The utility model belongs to the technical field of medical instruments, and particularly relates to a reusable heavy ion microporous membrane cell filtering device which comprises a lower cylinder component, comprising a lower cylinder main body, an extension part arranged at the top of the lower cylinder main body, an external thread arranged on the surface of the extension part, a mounting groove formed in the top of the extension part, and a heavy ion microporous membrane main body arranged in the mounting groove; the upper barrel assembly comprises an upper barrel main body arranged at the top of the lower barrel main body, an internal thread arranged at the bottom of the inner side wall of the upper barrel, and a limiting ring arranged on the inner side wall of the upper barrel; the structure is reasonable, in the using process, the heavy ion microporous membrane is convenient to replace, repeated use is convenient, the detection cost is reduced, and meanwhile generation of medical waste is reduced.

The application relates to a semiconductor device and a manufacturing method thereof, comprising the following steps: providing a substrate, wherein a semiconductor structure is formed on the substrate, and the semiconductor structure comprises a gate dielectric layer and a sacrifice layer formed on the gate dielectric layer; performing decoupling plasma nitridation treatment on the semiconductor structure, so that the nitrogen content of the semiconductor structure after the treatment is higher than that before the treatment; performing a heavy ion implantation process on the semiconductor structure after the treatment, so that the nitrogen element in the sacrifice layer is pushed into the gate dielectric layer; and removing the sacrifice layer. The application reduces or avoids the diffusion of nitrogen elements into the substrate, avoids the negative influence of the diffusion of nitrogen elements into the substrate on the element diffusion and channel mobility in the subsequent ion implantation process, effectively controls the thermal budget in the process, reduces or avoids the risk of crystallization in the gate dielectric layer, and improves the process stability.

The invention discloses a method for estimating potential track microstructure damage of a GaN device under an electron energy loss mechanism. The method comprises the following steps: establishing a GaN device structure model; simulating the motion trail of the high-energy heavy ion incidence device through numerical calculation; calculating energy deposition space-time distribution of the high-energy heavy ions along the incident trajectory under the leading of the electron energy loss mechanism; solving the coupling dual-temperature heat conduction equation of the electronic system and the lattice atomic system to obtain the temperature space-time distribution of the lattice atomic system; according to the temperature space-time distribution of the lattice atomic system, whether latent track microstructure damage is generated or not is judged by comparing the highest temperature of the lattice atomic system with the melting point of a device crystal material; and under the condition of judging that the latent track damage is generated, drawing a temperature change curve chart of lattice atoms at different positions, and determining the position of the crystal atom of which the highest temperature is equal to the melting point of the crystal material as the radius size of the latent track microstructure damage. According to the method, the latent track microstructure damage characteristics of the device can be quantitatively and quickly obtained at low cost.

The present invention discloses a thin-film air ionization chamber for proton and heavy-ion position detection, which is characterized by comprising a parallel-plate ionization detector and a signal extraction structure; the top of the parallel-plate ionization detector is an incident window, and the bottom is an exit window. Between the incident window and the exit window are successively a first high-voltage electrode film, a readout electrode film, and a second high-voltage electrode film; the substrate of the readout electrode film is a polyimide film, and readout electrodes are plated on both its upper and lower surfaces; wherein, the substrates of the first and second high-voltage electrode films are polyimide films, and conductive films are plated on the surfaces facing the readout electrode film for accessing high-voltage electrical signals; two chambers are formed between the first and second high-voltage electrode films and the readout electrode film for ionizing incident particles; the signal extraction structure is connected to the two readout electrodes for outputting the signals generated by the two readout electrodes. The present invention can achieve large-area and high-position-accuracy particle beam detection.

The invention discloses a silicon-based substrate structure for semiconductor epitaxial stress regulation and control and a preparation method of the silicon-based substrate structure, and belongs to the technical field of semiconductor materials. The method comprises the following steps: firstly prefabricating vacancy gradient in a silicon body by adopting silicon self-ions or inert heavy ions, and then performing helium ion implantation with a relatively low dose, so that helium atoms selectively nucleate in the formed vacancy gradient and grow through unified annealing to obtain a pore volume fraction which continuously changes along with depth. According to the invention, through a division cooperation mechanism of'vacancy prefabrication 'and'helium pore-forming', a coupling relationship between vacancy and gas is not generated by single helium injection any more, so that a pore gradient and a Young modulus gradient which can be designed and continuously adjusted in the thickness direction are realized, the controllability, stability and process compatibility of a pore-forming structure are remarkably improved, and the production cost is reduced. By constructing a modulus gradient structure in the silicon body, the problems of wafer warping, device layer cracking, bonding failure and the like are reduced.

The application discloses a method for widening the injection mass range of a linear ion trap / time-of-flight mass spectrometer, and discloses a linear ion trap / time-of-flight mass spectrometer, which widens the external ion injection mass range of the linear ion trap / time-of-flight mass spectrometer through a segmented multi-stage rod, a bias voltage and a step trapping voltage strategy; when external ions are injected, only ions within a certain mass range can reach a mass spectrometer detector due to the difference in the movement speed of light ions and heavy ions, and the limited mass range seriously limits the analysis performance of the linear ion trap / time-of-flight mass spectrometer; the segmented multi-stage rod, the bias voltage and the step trapping voltage strategy can widen the mass range of the linear ion trap / time-of-flight mass spectrometer to which external ions are injected.

The invention relates to a method for inducing optical anisotropy of a crystal material through heavy ion irradiation. According to the method, ion irradiation is carried out on an area, perpendicular to the in-plane crystal orientation, of a crystal material, so that defect aggregation and a lattice strain field are introduced into the area, and ion irradiation induces refractive index changes which are different in the in-plane direction and the out-of-plane direction in the area, so that an optical anisotropic structure is formed; ions adopted in the ion irradiation are Xe31 + ion beams. By controlling the ion dosage and utilizing the structural anisotropy of the rutile crystal, differentiated refractive index changes are successfully induced in the in-plane direction and the out-of-plane direction, strong and directional optical anisotropy is achieved, and a foundation is laid for manufacturing polarization-sensitive photonic devices.

A six-degree-of-freedom proton heavy ion radiotherapy bed comprises a bed plate and a base, a Z-axis rotating module is arranged on the base, an XY-axis overturning module is arranged on the Z-axis rotating module, an XY plane moving module is arranged on the XY-axis overturning module, and the bed plate is arranged on the XY plane moving module; in conclusion, the flexibility and precision of the radiotherapy bed can be remarkably improved, and the system can more accurately position the patient to the optimal treatment position by combining the multi-dimensional adjustment capabilities of rotation, overturning, translation and the like, so that the radiotherapy effect is improved.