118 results about "Heavy ion" patented technology

The invention belongs to the technical field of radiotherapy dose simulation measurement, and provides a heavy ion fixed machine head radiotherapy dose simulation measurement method and system. The method comprises the following steps: firstly, in a solid water model, according to a layering and key area encryption sampling principle, carrying out finite point and / or cutting layer dose measurement to obtain sparse dose data and a sampling position; inputting the three-dimensional dose distribution and a sampling position mask into a coding-decoding structure and a mask perception neural network with an attention mechanism in a decoding stage, and outputting complete three-dimensional dose distribution; and finally, outputting a simulation result containing dose distribution and uncertainty distribution. The method improves dose reconstruction precision and clinical quality control efficiency, and is suitable for dose verification before heavy ion radiotherapy.

The invention is suitable for the technical field of biological materials, and provides an embryo heavy ion track acquisition method based on a biological stack, and the method comprises the steps: carrying out the preprocessing of an initial biological stack, obtaining a target biological stack, obtaining an initial scanning image of the target biological stack, and scanning the target biological stack, and obtaining an initial scanning image of the target biological stack; marking the initial scanning image for the first time based on the central position of the seed embryo to obtain a target scanning image; fitting the target scanning image with the detection sheet of the target biological stack to obtain an initial fitting piece, and marking on the non-contact surface of the initial fitting piece for the second time according to the central position of the embryo to obtain a target fitting piece; scanning the target fitting piece through a preset laser confocal microscope to obtain an imaging picture of the seed embryo, and cutting an actual projection of the seed embryo on a preset projection contour based on the imaging picture and the central position of the seed embryo in the imaging picture; and identifying the heavy ion track of the seed embryo according to the actual projection.

The invention belongs to the technical field of radiation effect and radiation hardening of semiconductor devices and integrated circuits, and particularly relates to a single event effect laser simulation system based on Bessel beam shaping. A Bessel beam shaping and focusing module based on an axon lens is introduced and composed of the axon lens and two lenses, namely a single lens and a focusing lens, a Gaussian beam of an incident beam is shaped into a quasi-Bessel beam, and the quasi-Bessel beam is utilized to irradiate a semiconductor device to be detected. The axial distribution of the light beam is kept unchanged in a range of hundreds of microns, and the focusing breaking through the diffraction limit is realized in the radial distribution, so that the effect closer to the heavy ion charge deposition track is generated. The technology can solve the problem that a multilayer structure device, a thick sensitive region device and a wide forbidden band device are difficult to test through traditional laser simulation, and has important practical value for promoting laser simulation of the single event effect.

The invention discloses an anti-radiation SPH-14T SRAM (Static Random Access Memory) circuit and an anti-radiation SPH-14T SRAM chip combining polarity reinforcement and source isolation technologies, which are designed by adopting a polarity reinforcement principle that transistors of the same type have a single flip characteristic under spatial heavy ion bombardment, and the stability of redundant nodes S0 and S1 is ensured by utilizing the design method. And therefore, the anti-overturning capability of nodes in the circuit is enhanced. Secondly, the stability of a node Q and a node QB is improved through multiplexing of a pull-up PMOS tube and the source isolation technology, meanwhile, the circuit uses four transmission transistors for reading and writing, in the data writing process, a bit line writes data into an internal node QQB and an internal node S0S1 at the same time through transmission transistors N7, N8, N9 and N10, so that the data is more easily written into a storage node, and the stability of the storage node is improved. Therefore, the design greatly improves the data writing speed and noise margin (SNM) of the unit, and a simulation result shows that compared with the existing five SRAM units, the SPH-14T unit disclosed by the invention has more prominent advantages in the writing speed aspect and the noise margin aspect compared with other five SRAMs.

A radiation dose quantification method and system, the method comprising: detecting, with one or more detectors with respective sensitive volumes, gamma-rays emitted as a result of capture of neutrons by a composition in a subject subjected to an irradiation program, the composition comprising one or more thermal neutron capture agents, the neutrons having been generated by non-elastic collisions between a primary beam of particles and nuclei in the subject, wherein the particles consist of any one or more of protons, deuterons, tritons and heavy ions, the irradiation program comprises at least one period of irradiation with a beam duration that includes beam-on periods and beam-off periods; applying at least one predefined energy window or filter configured to accept only detection events in the one or more detectors resulting from gamma-rays with an energy indicative of selected gamma-rays arising from the capture of thermal neutrons by the one or more thermal neutron capture agents, wherein the thermal neutrons are neutrons with energies below approximately 0.4 eV; applying a timing window configured to reject or ignore detection events in the one or more detectors resulting from at least prompt gamma-rays produced in non-neutron capture events; and determining the radiation dose of neutron radiation received by the subject during the irradiation program from at least the accepted detection events or determining a dose map of the radiation received by the subject from at least the accepted detection events.

The utility model discloses a support for replacing a treatment bed, and relates to the field of proton and heavy ion therapeutic apparatuses, the support comprises a bed board, the two ends of the bed board are respectively provided with a supporting table, a connecting plate is arranged above the supporting tables, the connecting plate is located between the supporting tables and the bed board, and a bearing plate is arranged between the bed board and the connecting plate. A limiting frame is fixed to the supporting table, the connecting plate slides in the limiting frame, a height coarse adjustment assembly is arranged between the supporting table and the connecting plate, a height fine adjustment assembly is arranged between the connecting plate and the bearing plate, and horizontal adjustment mechanisms are arranged at the two ends of the bearing plate. When the treatment bed breaks down, the bed plate can replace the treatment bed. The bed board is finally adjusted to the accurate position through the height coarse adjustment assembly and the height fine adjustment assembly. After height adjustment is completed, the horizontal position of the bed board can be adjusted through the horizontal adjusting mechanism, and smooth treatment is guaranteed.

The application discloses a preparation method of a heavy ion microporous composite filtration membrane and application thereof, and relates to the technical field of membrane separation preparation, wherein the preparation method comprises the following steps: step one, compounding a nuclear pore membrane on the upper side of a first base material; step two, preparing a casting solution, and then casting the casting solution on a second base material to form a nascent membrane after scraping; step three, performing a blowing operation on the nascent membrane to obtain a pre-phase separation membrane; step four, immersing the pre-phase separation membrane in a coagulation bath to perform a solidification operation, and obtaining a solidified membrane; step five, performing an area stretching operation on the solidified membrane, and then performing a cleaning operation in pure water, and then performing a drying operation after the cleaning operation to obtain a microfiltration membrane; and step six, compounding the microfiltration membrane on the upper side of the nuclear pore membrane to obtain a composite filtration membrane. The preparation method of the heavy ion microporous composite filtration membrane improves the liquid stopping effect, filtration flux and flux stability of the filtration membrane by compounding the first base material, the nuclear pore membrane and the microfiltration membrane.

This invention provides a quadruple ion-coupled erosion-protected concrete and its preparation method, relating to the field of special concrete materials technology. The concrete comprises basic components and functional admixtures. The basic components include cementitious materials, aggregates, and water. The functional admixtures include a coupling ion locking agent, a dual-interface film-forming aid, and a salt-expansion-resistant crack-resistant agent. The coupling ion locking agent includes calcined calcium aluminum hydrotalcite and diethylenetriamine pentacarboxylate; the dual-interface film-forming aid includes isobutyltriethoxysilane and lithium silicate; and the salt-expansion-resistant crack-resistant agent includes calcium sulfoaluminate expansion agent and lightly calcined magnesium oxide. The three admixtures work synergistically from three dimensions: active ion solidification, in-situ interface shielding, and full-cycle volume compensation, achieving simultaneous solidification of the four erosion ions, continuous blocking of penetration channels, and effective offsetting of salt crystallization expansion stress. This ensures the long-term safe service of the concrete under extreme conditions of high water pressure, high humidity, alternating wet and dry conditions, and multi-ion coupling erosion.

The application discloses a trench gate power MOSFET device with anti-single event burnout reinforcement and a preparation method thereof, which comprises the following steps: etching a deep trench at a center position of the device and forming a P-type shielding area and depositing N-type polysilicon; forming a current expansion layer between a boron-doped area and an N-type drift area by means of ion implantation; and forming a P-type high-concentration doped area and an N-type high-concentration source area above the boron-doped area by means of ion implantation. According to the technical scheme, the internal electric field of the device can be modulated, the electric field distribution on the heavy ion incident track is smoother, the instantaneous power density of the device is reduced, the local high temperature is reduced, the trench oxide layer is protected from high temperature, the forward conduction capability of the device is improved, and the anti-single event burnout capability of the device can be remarkably improved without sacrificing the basic electrical characteristics of the device.

A method for fabricating a nonlinear optical waveguide with gradient refractive index distribution, in which a nonlinear optical crystal is prepared; a type of first heavy ions, a type of second heavy ions and parameters related to an irradiation process are determined; the first heavy ions are accelerated to generate a first ion beam; the nonlinear optical crystal is bombarded with the first ion beam to obtain a primary processed crystal; the second heavy ions are accelerated to generate a second ion beam; the primary processed crystal is bombarded with the second ion beam to obtain a secondary processed crystal; and the secondary processed crystal is segmented to obtain the desired optical waveguide.

The invention belongs to the technical field of material preparation, and particularly relates to micro-pit preparation for a single-molecule detection chip substrate and a single-molecule detection chip. The method provided by the invention mainly comprises the following steps: accelerating heavy ions by using an accelerator, bombarding a base material by using the accelerated heavy ions, etching the base material by using an etching agent added with a corrosion inhibitor after the heavy ions damage the base material to obtain micro-pits with specific diameters and depths, and cleaning and drying the etched sample. According to the method, the substrate is impacted in an accelerated mode through heavy ions, the micro-pits are prepared, the limitation of a traditional photoetching technology is broken through, the patterns of the micro-pits are defined directly through heavy ion bombardment, a mask is not needed, the material cost is reduced, production interruption and extra cost caused by damage of the mask are avoided, the machining process is relatively simple, and the method is suitable for large-scale popularization and application. Multiple complex photoetching and etching steps are not needed, the production efficiency is greatly improved, the production period is shortened, and the production cost is reduced.

An arylboron compound, its preparation method, applications, and pharmaceutical compositions are disclosed for tumor imaging. The compound of formula (I) exhibits high fluorescence quantum efficiency through intramolecular charge transfer. The compound of formula (I) synthesized in this invention can be linked to different antibodies via Q3 at certain concentrations, allowing for precise targeting of corresponding tumors based on the antibody. This type of boron drug formulation can be used in boron neutron capture therapy to kill tumor cells. It exhibits better killing effects; the compound of formula (I) targets tumor cells through antigen-antibody interaction. After the boron-10-containing drug accumulates at the tumor site, neutron radiation triggers a nuclear reaction releasing alpha particles and... 7 Lithium particles kill cells; the range of these two particles is approximately 10 μm. High-energy-density heavy ions disrupt the DNA double helix structure in tumor cells, causing irreparable cell death. Simultaneously, the 10 μm distance avoids damage to normal cells and tissues.

The utility model belongs to the technical field of medical instruments, and particularly relates to a reusable heavy ion microporous membrane cell filtering device which comprises a lower cylinder component, comprising a lower cylinder main body, an extension part arranged at the top of the lower cylinder main body, an external thread arranged on the surface of the extension part, a mounting groove formed in the top of the extension part, and a heavy ion microporous membrane main body arranged in the mounting groove; the upper barrel assembly comprises an upper barrel main body arranged at the top of the lower barrel main body, an internal thread arranged at the bottom of the inner side wall of the upper barrel, and a limiting ring arranged on the inner side wall of the upper barrel; the structure is reasonable, in the using process, the heavy ion microporous membrane is convenient to replace, repeated use is convenient, the detection cost is reduced, and meanwhile generation of medical waste is reduced.

The application relates to a semiconductor device and a manufacturing method thereof, comprising the following steps: providing a substrate, wherein a semiconductor structure is formed on the substrate, and the semiconductor structure comprises a gate dielectric layer and a sacrifice layer formed on the gate dielectric layer; performing decoupling plasma nitridation treatment on the semiconductor structure, so that the nitrogen content of the semiconductor structure after the treatment is higher than that before the treatment; performing a heavy ion implantation process on the semiconductor structure after the treatment, so that the nitrogen element in the sacrifice layer is pushed into the gate dielectric layer; and removing the sacrifice layer. The application reduces or avoids the diffusion of nitrogen elements into the substrate, avoids the negative influence of the diffusion of nitrogen elements into the substrate on the element diffusion and channel mobility in the subsequent ion implantation process, effectively controls the thermal budget in the process, reduces or avoids the risk of crystallization in the gate dielectric layer, and improves the process stability.

The invention discloses a method for estimating potential track microstructure damage of a GaN device under an electron energy loss mechanism. The method comprises the following steps: establishing a GaN device structure model; simulating the motion trail of the high-energy heavy ion incidence device through numerical calculation; calculating energy deposition space-time distribution of the high-energy heavy ions along the incident trajectory under the leading of the electron energy loss mechanism; solving the coupling dual-temperature heat conduction equation of the electronic system and the lattice atomic system to obtain the temperature space-time distribution of the lattice atomic system; according to the temperature space-time distribution of the lattice atomic system, whether latent track microstructure damage is generated or not is judged by comparing the highest temperature of the lattice atomic system with the melting point of a device crystal material; and under the condition of judging that the latent track damage is generated, drawing a temperature change curve chart of lattice atoms at different positions, and determining the position of the crystal atom of which the highest temperature is equal to the melting point of the crystal material as the radius size of the latent track microstructure damage. According to the method, the latent track microstructure damage characteristics of the device can be quantitatively and quickly obtained at low cost.

The invention discloses a silicon-based substrate structure for semiconductor epitaxial stress regulation and control and a preparation method of the silicon-based substrate structure, and belongs to the technical field of semiconductor materials. The method comprises the following steps: firstly prefabricating vacancy gradient in a silicon body by adopting silicon self-ions or inert heavy ions, and then performing helium ion implantation with a relatively low dose, so that helium atoms selectively nucleate in the formed vacancy gradient and grow through unified annealing to obtain a pore volume fraction which continuously changes along with depth. According to the invention, through a division cooperation mechanism of'vacancy prefabrication 'and'helium pore-forming', a coupling relationship between vacancy and gas is not generated by single helium injection any more, so that a pore gradient and a Young modulus gradient which can be designed and continuously adjusted in the thickness direction are realized, the controllability, stability and process compatibility of a pore-forming structure are remarkably improved, and the production cost is reduced. By constructing a modulus gradient structure in the silicon body, the problems of wafer warping, device layer cracking, bonding failure and the like are reduced.

The application discloses a method for widening the injection mass range of a linear ion trap / time-of-flight mass spectrometer, and discloses a linear ion trap / time-of-flight mass spectrometer, which widens the external ion injection mass range of the linear ion trap / time-of-flight mass spectrometer through a segmented multi-stage rod, a bias voltage and a step trapping voltage strategy; when external ions are injected, only ions within a certain mass range can reach a mass spectrometer detector due to the difference in the movement speed of light ions and heavy ions, and the limited mass range seriously limits the analysis performance of the linear ion trap / time-of-flight mass spectrometer; the segmented multi-stage rod, the bias voltage and the step trapping voltage strategy can widen the mass range of the linear ion trap / time-of-flight mass spectrometer to which external ions are injected.

The invention relates to a method for inducing optical anisotropy of a crystal material through heavy ion irradiation. According to the method, ion irradiation is carried out on an area, perpendicular to the in-plane crystal orientation, of a crystal material, so that defect aggregation and a lattice strain field are introduced into the area, and ion irradiation induces refractive index changes which are different in the in-plane direction and the out-of-plane direction in the area, so that an optical anisotropic structure is formed; ions adopted in the ion irradiation are Xe31 + ion beams. By controlling the ion dosage and utilizing the structural anisotropy of the rutile crystal, differentiated refractive index changes are successfully induced in the in-plane direction and the out-of-plane direction, strong and directional optical anisotropy is achieved, and a foundation is laid for manufacturing polarization-sensitive photonic devices.

A six-degree-of-freedom proton heavy ion radiotherapy bed comprises a bed plate and a base, a Z-axis rotating module is arranged on the base, an XY-axis overturning module is arranged on the Z-axis rotating module, an XY plane moving module is arranged on the XY-axis overturning module, and the bed plate is arranged on the XY plane moving module; in conclusion, the flexibility and precision of the radiotherapy bed can be remarkably improved, and the system can more accurately position the patient to the optimal treatment position by combining the multi-dimensional adjustment capabilities of rotation, overturning, translation and the like, so that the radiotherapy effect is improved.

The invention belongs to the technical field of material preparation, and particularly relates to a preparation method and application of a micro-pit with polycarbonate as a base material. The method provided by the invention mainly comprises the following steps: accelerating heavy ions by using an accelerator, bombarding a base material by using the accelerated heavy ions, and after the heavy ions damage polycarbonate, etching the polycarbonate by using an etching agent added with a corrosion inhibitor to obtain micro-pits with specific diameters and depths, and cleaning and drying the etched sample. The preparation of the micro-pit is realized by accelerating impact of the polycarbonate with heavy ions, the method breaks through the limitation of the traditional photoetching technology, the pattern of the micro-pit is directly defined through heavy ion bombardment, a mask is not needed, the material cost is reduced, production interruption and extra cost caused by damage of the mask are also avoided, and the production efficiency is improved. And the processing process is relatively simple, multiple complex photoetching and etching steps are not needed, the production efficiency is greatly improved, the production period is shortened, and the production cost is reduced.

The application discloses a matching method for realizing beam dosimetry equivalence between multiple treatment room units and related equipment, and belongs to the technical field of proton heavy ion radiotherapy. The method comprises the following steps: obtaining beam physical characteristic parameters of each treatment room unit under multiple mono-energetic beam conditions covering a clinical treatment energy region; defining a reference benchmark, taking the beam physical characteristic parameters of the reference benchmark as a target, and determining a matching parameter set for a to-be-matched treatment unit, so that the beam characteristics of the to-be-matched treatment unit are equivalent to the reference benchmark as a whole in a multi-dimensional characteristic space after adjustment; and the matching parameter set comprises physical additional module parameters and dose correction parameters. Through the hierarchical method of one-by-one matching of mono-energetic beams, multi-energy comprehensive iterative optimization, and unified matching parameter output, the method realizes dosimetry equivalent treatment between multiple treatment room units without the need of formulating a treatment plan again, improves the cross-device universality, treatment efficiency and safety of a multi-source multi-room proton radiotherapy system, and makes proton treatment available everywhere.

The invention discloses an on-orbit single event upset protection method for a FLASH storage chip and a reliability evaluation method of the FLASH storage chip, and relates to reliability design and test of the FLASH storage chip for an on-orbit satellite. The problems that the prior art depends on an expensive and limited ground heavy ion test and is insufficient in applicability to a long-term on-orbit working mode, a satellite shielding effect and proton overturning of a storage chip are solved. According to the method, protection is carried out according to two-out-of-three of storage bits, and the reliability evaluation method specifically comprises the steps that the proton energy spectrum of a track where the FLASH storage chip is located is calculated, a proton single-particle experiment is carried out based on the proton energy spectrum, the single-particle upset bit number and the single-particle upset section are obtained, a single-particle upset energy threshold value is obtained through Bendel two-parameter fitting, and the single-particle upset energy threshold value is used for evaluating the reliability of the FLASH storage chip. The single event upset probability of each storage bit of a single FLASH chip is calculated, and the reliability of protection according to two-out-of-three of the storage bits is evaluated. The method is suitable for the fields of spacecraft electronic system reliability design, on-orbit storage chip single event effect evaluation and the like.

The present application relates to a kind of single particle effective data acquisition methods of flip welding circuit, comprising: test sample substrate thinning;Test heavy ion selection;Test circuit temperature monitoring;Data validity determination;Thinning thickness measurement and effective data calculation.Compared with the traditional test method, using the single particle test evaluation method in the present application, the single particle test efficiency of flip welding process circuit can be effectively improved.Through temperature control, multiple verification and error calibration, etc., the accuracy and effectiveness of the test data of the flip welding process circuit in the single particle test are provided, effectively filling the blank of the single particle evaluation method of the flip welding circuit used in spaceflight, and providing strong support for the radiation hardening of flip welding process spaceflight integrated circuit.

Systems, components, methods, and algorithms encoded as executable instructions for processing a sample using focused ion beams are described. A method includes processing a sample 125 by extracting a beam of ions 310 from a mixture of a first gas and a second gas. The beam can include a composition of relatively heavy ions and relatively light ions. The method can include deflecting 330 the beam of ions in accordance with a deflection pattern and directing the beam through an electromagnetic field 305 that is oblique relative to an axis of the beam. The electromagnetic field can be configured to at least partially disperse 315 the beam in space such that the deflection pattern causes the beam of ions to process a first portion of a sample surface by the relatively light ions and a second portion of the sample surface by the relatively heavy ions.

The present application relates to the field of particle track microanalysis technology, and is a heavy ion track positioning method suitable for microseeds. The present application mainly uses a scanner to scan a biological stack, uses mapping software to process the scanning diagram, obtains a picture of a single seed hole, and acquires position information of seeds in the seed hole, uses a VHX microscope to scan a CR39 detection sheet, acquires passive detection information of each seed hole, and superimposes the passive detection information on the picture processed by the mapping software, analyzes radiation detection conditions at the Arabidopsis thaliana seeds, and further converts data to acquire various radiation information of the individual Arabidopsis thaliana seeds. The present application is committed to batch processing, rapid, high-precision processing of returned detection sheets. In terms of batch degree, the whole process is batch processing, and related software can be used to automatically output batch pictures and data, thereby reducing the degree of manual participation.

A method for efficiently inducing genomic variation in rice microspore sexual cells, relating to the technical field of plant cell engineering. In the method, a rice male gamete (early uninucleate microspore) is used as a mutagenic material, it is attempted, for the first time, to irradiate rice microspore sexual cells with heavy ions (4 Gy) and γ rays (10 Gy), experimental technologies such as fluorescence microscope observation, FDA-PI dyeing, and immunofluorescence detection are taken into account to determine three indicators comprising a target period for irradiation sample sampling, an appropriate heavy ion / γ ray radiation dose, and an appropriate sampling time after the end of radiation, and a relatively complete rice microspore sexual cell mutagenesis system is established. The method involves clear indicators, strong operability, can support batch mutagenesis operations, and can provide a technical system support for the efficient batch production of rice sexual cell mutants.

The application belongs to the technical field of radiotherapy dose simulation measurement, and provides a heavy ion fixed head radiotherapy dose simulation measurement method and system. The method first performs limited point and / or slice dose measurement in the solid water phantom according to the layered and key area encryption sampling principle to obtain sparse dose data and sampling positions; then inputs the sampling positions into the coding-decoding structure and the mask perception neural network with attention mechanism in the decoding stage, and outputs the complete three-dimensional dose distribution; finally, the simulation results containing the dose distribution and the uncertainty distribution are output. The application improves the dose reconstruction accuracy and the clinical quality control efficiency, and is suitable for heavy ion radiotherapy dose verification.

Provided is a manufacturing method for a semiconductor device including forming a first electrode layer on a front surface of a wafer, implanting, into an outer peripheral region of the front surface of the wafer, a heavy ion of an element in third and subsequent rows of a periodic table, forming an oxide film in the outer peripheral region into which the heavy ion has been implanted, and forming a second electrode layer on the first electrode layer by plating. A dose of the heavy ion may be 1E15 cm−2 or more. A depth of an implantation range of the heavy ion into the wafer may be 0.02 μm or more. The heavy ion may be an As ion, a P ion, or an Ar ion.

The present application relates to the technical field of battery pole piece current collector, and specifically discloses a porous composite aluminum foil, a preparation method thereof and a battery pole piece. The porous composite aluminum foil comprises a base film; the base film has a plurality of through holes in the thickness direction, and the through holes are double-cone-shaped holes; and an aluminum metal layer is deposited on the inner walls of the through holes and both sides of the base film. The composite aluminum foil has excellent electrical conductivity, electrolyte wettability and rate performance, and can be cut arbitrarily without affecting the electrical conductivity. The preparation method of the porous composite aluminum foil comprises the following steps: firstly, a base film with double-cone-shaped holes is obtained by using heavy ion irradiation technology; and then an aluminum metal layer is deposited on the upper and lower sides of the base film to obtain the porous composite aluminum foil, so that the large-scale production of the porous composite aluminum foil can be realized. The application of the porous composite aluminum foil includes battery pole pieces. The battery pole piece contains the porous composite aluminum foil and has high energy density and power density.

The application belongs to the technical field of semiconductors, and provides a silicon carbide power device single-particle leakage current degradation data analysis method, system and readable medium, which comprises the following steps: collecting leakage current data of a silicon carbide power device in a heavy ion irradiation process; calculating a first-order differential absolute value of the leakage current data, and dividing the leakage current data into several fragmented flat regions according to the first-order differential absolute value; processing the several fragmented flat regions through a mean value comparison method to determine whether a real single-particle leakage step occurs; inputting the leakage current data in which the real single-particle leakage step occurs into a kernel density estimation algorithm to obtain a silicon carbide power device single-particle leakage current degradation data analysis result. The application effectively solves the interference of test noise on the identification of a small leakage step, and can accurately extract a leakage jump of a nano-ampere level.