35 results about "Remote plasma" patented technology

One example provides a processing tool comprising a processing chamber and a remote plasma generator (RPG) fluidly connected to the processing chamber. The processing tool further comprises an RPG gas supply system for mixing and delivering gases to the RPG. The RPG gas supply system comprises a first RPG gas supply line for delivering a first gas at a first, lower flow rate to the RPG, a second RPG gas supply line for delivering a second gas at a second, higher flow rate to the RPG, a junction connecting the first RPG gas supply line and the second RPG gas supply line, an orifice in the first RPG gas supply line, a divert valve on the second RPG gas supply line for diverting the flow away from the RPG and a common RPG gas supply line connecting the junction to the RPG.

This invention relates to the field of semiconductor process chamber cleaning technology, specifically to a semiconductor process chamber cleaning gas composition based on HFO-1447fz, a remote plasma cleaning method, and a closed-loop control method. The main cleaning gas is HFO-1447fz (CAS134190-34-8), accounting for 30% to 70% of the total molar fraction of the composition; the co-gas is selected from one or two of CF3I and C2F5I, accounting for 5% to 25% of the total molar fraction of the composition; the auxiliary regulating gas is selected from one or more of He, Ne, and Kr, accounting for 15% to 55% of the total molar fraction of the composition; the content of fluorine-containing unsaturated impurity compounds containing C=C or C≡C bonds in the cleaning gas composition is ≤0.08 mol. This invention uses HFO-1447fz as the main cleaning gas, combined with CF3I, C2F5I synergistic gases and rare gases for auxiliary regulation, to form a highly efficient cleaning system. The special molecular structure of HFO-1447fz can generate highly active fluorine radicals after plasma activation, which, together with the catalytic effect of iodine radicals, improves the removal rate of silicon-based dielectric deposits.

A method of performing pulsed remote plasma etching includes arranging a substrate in a processing chamber configured to perform pulsed remote plasma etching, setting at least one process parameter of the processing chamber, supplying at least one gas mixture to an upper chamber region of the processing chamber, supplying, in an ON period, a first voltage to coils arranged around the upper chamber region to energize the at least one gas mixture and generate plasma within the upper chamber region of the processing chamber, turning off the first voltage in an OFF period to discontinue generating plasma within the upper chamber region of the processing chamber, and alternating between supplying the first voltage in the ON period and turning off the first voltage in the OFF period to generate pulsed remote plasma within the upper chamber region of the processing chamber.

In some embodiments, a showerhead assembly includes a heated showerhead having a heater plate and a gas distribution plate coupled together; an ion filter spaced from the heated showerhead; a spacer ring in contact between the heated showerhead and the ion filter; a remote plasma region between the heated showerhead and the ion filter; an upper isolator spaced from the spacer ring and supported on the ion filter; a sealing ring fastened to the heated showerhead sealing against the upper isolator and pushing the upper isolator against the ion filter; a gap between a bottom of the gas distribution plate and a top of the ion filter, the gap being in fluid communication with the remote plasma region; a first passage extending through the heater plate; and a second passage in communication with the first passage and extending through the gas distribution plate, the second passage extending to the gap.

This invention provides a remote plasma cleaning kit and method for a PECVD chamber. The kit includes a chamber body, a remote plasma source, a spray head, a liner assembly, and a movable heater. The chamber body comprises an outer chamber and an inner chamber nested within it. The remote plasma source is connected to the chamber body. The spray head is positioned in the upper space between the outer and inner chambers. The liner assembly includes a top liner and a bottom liner stacked along a direction away from the spray head, each liner having uniformly distributed evacuation holes arranged in a row. The liner assembly and the inner chamber together define an evacuation channel. The movable heater is embedded in the liner assembly and moves vertically along it. This invention improves the uniformity and stability of the PECVD chamber cleaning process, significantly increases cleaning efficiency, and reduces particulate contamination in the chamber.

Methods for repairing and replenishing carbon content of low-k dielectric films are provided. In some embodiments, the methods include generating plasma radicals in a remote plasma source, flowing a precursor gas comprising a recovery precursor into a processing region, and exposing the precursor gas and a low-k film on a substrate in the processing region to plasma radicals from the remote plasma source to decrease a k-value and increase a carbon content of the low-k film.

The present invention provides a remote plasma reactor for a semiconductor manufacturing facility, the reactor comprising: a plasma reaction chamber providing a ring-shaped plasma reaction space in which a plasma reaction occurs; and a magnetic core unit coupled to the plasma reaction chamber to surround at least a partial section of the plasma reaction space. Source gases that have passed through a gas inlet are sprayed in a direction away from the center of the plasma reaction space so that the source gases form vortexes in the plasma reaction space.

The embodiment of the specification provides a kind of plasma enhanced chemical vapor deposition equipment, including window structure, equipment cavity and remote plasma;Window structure is installed on the shell of equipment cavity by clamp;Remote plasma is used to convert process gas in equipment cavity into plasma state and generate fluorine ion;Remote plasma is connected with window structure by cleaning pipeline, and switch is arranged on the cleaning pipeline, and the switch is used to transport fluorine ion to the surface of window structure through the cleaning pipeline to clean the surface of window structure.By this window structure, by opening the switch, fluorine ion generated by remote plasma work can be transported to the surface of window body through the cleaning pipeline, and the surface film layer of the surface of window body is reacted to realize the cleaning of window body, to ensure the observation effect of window to the reaction process in equipment;When cleaning work is completed, close the switch, to avoid excessive cleaning caused by repeated cleaning to cause damage to window.

This invention discloses a plasma generator and a microwave remote plasma source system. The plasma generator includes a reaction housing and at least one microwave radiation component located within the cavity of the reaction housing. The microwave radiation component includes a metal rod and a heat dissipation insulating tube, the heat dissipation insulating tube completely surrounding the entire outer surface of the metal rod within the cavity of the reaction housing. The metal rod is used to receive microwave energy to ionize process gas within the cavity of the reaction housing. This invention provides a plasma generator and a microwave remote plasma source system that can improve the ionization effect of process gas and the plasma density within the cavity of the reaction housing, as well as improve plasma purity and heat dissipation efficiency of the metal rod.

The application discloses a composite ceramic cavity for a remote plasma source and a preparation method thereof, and belongs to the technical field of semiconductor manufacturing equipment. The composite ceramic cavity body of the application is integrally sintered from Al2O3-BN composite ceramic, is provided with an air inlet, an air outlet and a hollow channel in communication, has a bare composite ceramic surface on the inner wall, is provided with a chemical silver plating layer on the outer wall corresponding to the plasma area, and is coated with an inorganic protective layer outside the silver layer. In the application, the mass percentage of Al2O3 is 85%-95%, the mass percentage of BN is 5%-15%, the thickness of the cavity is 5-10 mm, the density is greater than or equal to 3.6 g / cm 3 , the thickness of the silver layer is 5-20 mu m, and the thickness of the inorganic protective layer is 0.5-2 mu m. The composite ceramic cavity of the application solves the problems of easy erosion and peeling of the anodization dielectric layer of the existing metal cavity, metal corrosion pollution and high maintenance cost, fundamentally avoids the corrosion of the inner wall, and ensures the purity of the process gas.

The present application relates to the technical field of vacuum cavity testing, and discloses a cavity vacuum testing device and method for a remote plasma module, wherein the cavity vacuum testing device for the remote plasma module comprises a testing machine main body, a motor arranged outside the testing machine main body, and a detection mechanism arranged on the top of the workbench of the testing machine main body; the detection mechanism comprises a support plate arranged on the top of the workbench of the testing machine main body, a workpiece arranged at the bottom of the support plate, a bidirectional screw rod arranged on the side of the motor close to the support plate, a plurality of slotted grooves symmetrically and obliquely arranged on the side of the support plate close to the bidirectional screw rod, a sliding block arranged in the slotted groove, a lower vertical rod arranged at the bottom of the sliding block, and an upper connecting rod arranged at the top of the sliding block. Through the arrangement of the detection mechanism, the workstations can be flexibly increased, the user can adjust the number of workstations according to actual needs, the testing efficiency is improved, and the device has the ability to adapt to cavities with different diameters.

The present application relates to a remote plasma chamber cleaning method using 3,3,4,4,4-pentafluoro-1-butene and a control method thereof, including a remote plasma source, a gas supply unit, a vacuum chamber, a vacuum exhaust unit and a bypass gas path. 3,3,4,4,4-pentafluoro-1-butene is used as the main cleaning gas, and the delayed introduction of oxygen-containing gas can efficiently remove SiO2, SiN x and other silicon-based dielectric deposits; the bypass gas path separates the oxygen-containing gas from the remote discharge area, avoiding polymerization / redeposition and side reactions, and improving cleaning repeatability; through pipeline temperature control, pressure regulation and inert gas assistance, the design is suitable for different cavity volumes and film layer states, reducing the risk of equipment corrosion; dynamic parameter adjustment and multi-method endpoint detection avoid over-cleaning, reduce material loss and chamber damage; based on the cavity and film layer information, the parameters are initialized, and the process is dynamically optimized based on real-time pressure, gas composition and other data to automatically complete the cleaning, termination and reset processes.

This application relates to the field of semiconductor technology, specifically to plasma processing equipment and a method for controlling the ion concentration in the substrate processing area. It solves the technical problems of long process gas switching times and low intake / exhaust efficiency caused by the use of remote plasma sources or ion filter grids in existing technologies. This application involves setting a first conductive structure outside the substrate processing area within the process chamber. By controlling the state of the first conductive structure—for example, placing it at a negative potential, floating it, placing it at a positive potential, or grounding it—when the process chamber is operating in a free radical-based first process, the negative charge of the first conductive structure enables precise separation of free radicals and ions. This effectively suppresses ion diffusion into the substrate, eliminates the need for RPS or ion filter grids, improves intake / exhaust efficiency, and helps increase production capacity.

A temperature control system and method for a remote plasma source, which utilizes a blowing device to provide a gas flow to continuously blow the vacuum cavity of the remote plasma source, and utilizes an exhaust device installed on a heat sink to continuously exhaust the gas flow in the heat sink, and in the blowing and exhausting process, a heat preservation device is arranged on the gas inlet pipeline of the remote plasma source to maintain the temperature of the gas inlet pipeline. The invention effectively balances the cooling demand of the discharge tube and the heat preservation demand of the gas inlet pipeline in the remote plasma source, greatly improves the situation of high temperature leading to the rupture of the discharge tube, prolongs the service life of the discharge tube, reduces the cost of the device, and reduces the abnormal situation of the equipment caused by the rupture of the discharge tube.

This invention discloses a remote plasma source device and its control method for optimizing process uniformity. The ion source device of this invention designs the external main structure of the deposition or etching reaction chamber as a single-leaf hyperboloid structure and the bottom of the substrate support stage as a paraboloid of revolution. This design allows for the rectification of the precursor gas and free radicals in the plasma within the reaction chamber, ensuring a uniform and stable downward flow of laminar gas along the substrate surface, thereby optimizing the uniformity of deposition or etching. Furthermore, this invention improves the utilization efficiency of the precursor gas and free radicals, reducing processing time. In addition, the remote plasma source design allows positively charged ions and electrons in the plasma to gradually recombine or be adsorbed by the inner wall of the top of the reaction chamber during transport, leaving only neutral free radicals reaching the substrate, thus reducing plasma damage to the substrate and improving the quality of the processed thin film.

The present invention is a remote plasma unit 100 that increases the amount of radicals generated in a plasma unit and that converts a gas into plasma and allows the plasma to flow out. The remote plasma unit 100 is provided with: a block body 2 inside of which a flow path 2S is formed and on outer surfaces of which a plurality of mounting surfaces 2x facing in mutually different directions are formed; and plasma generators 3 that are respectively mounted on at least one of the plurality of mounting surfaces 2x.

An eco-friendly plasma cleaning system and method are disclosed. The plasma cleaning system comprises a remote plasma device. Here, a precursor having a global warming potential (GWP) of 10,000 or less and an oxygen-containing gas are introduced into the remote plasma device, plasma is generated using the precursor and the oxygen-containing gas in the remote plasma device, and the plasma or radicals corresponding thereto are supplied to a chamber connected to the remote plasma device, so as to clean the chamber.

1. The name of the design product: remote plasma source cavity (45L). 2. The use of the design product: used for dissociating nitrogen trifluoride gas into fluoride ion pairs for chamber cleaning, surface treatment, material modification, film deposition and other processes in a vacuum environment. 3. The design points of the design product: in shape. 4. The picture or photo that best shows the design points: perspective view.

This disclosure provides a thin film deposition apparatus and a thin film deposition method, relating to the field of semiconductor technology. The thin film deposition apparatus includes: a chamber; a support device having at least one support groove for supporting a substrate; a microwave field generator located outside the chamber for generating a microwave field to heat the substrate to a target temperature; the target temperature is greater than or equal to 32 degrees Celsius and less than or equal to 800 degrees Celsius; at least one pair of capacitor field plates, the capacitive field formed between the two capacitor field plates inducing eddy currents on the surface of the substrate; at least one support groove positioned between the paired capacitor field plates; a remote plasma source for generating free radicals, which can flow to the surface of the substrate located in the chamber; and a pressure control device for controlling the pressure inside the chamber to be greater than or equal to a first target pressure and less than or equal to a second target pressure; the first target pressure is greater than or equal to 1 Torr; and the second target pressure is less than or equal to 10 Torr.

A system for etching a sample includes a vacuum chamber, an electron beam source, and a remote plasma source. The sample is simultaneously subjected to irradiation from the electron beam source and a reactive neutral flux from the remote plasma source to induce etching of a surface of the sample.

The present invention relates to an apparatus for processing an object (O), comprising an activator (A) for activating a precursor gas (P) to generate a component (C) from the precursor gas, a guide (G) for locally supplying the component onto the object, and a beam unit (BU) for supplying a particle beam (B) onto the object. Further embodiments relate to a similar method and a computer program.

A remote plasma source (RPS) power coupling circuit and a control system are provided. The RPS power coupling circuit includes a direct-current (DC) voltage source, two current sharing circuits, a three-winding transformer, and a chamber load, where the current sharing circuits each include a full-bridge inverter circuit, a resonant converter, and a current sharing resistor Ro; the DC voltage source is input to the full-bridge inverter circuit; the resonant converter is connected to the full-bridge inverter circuit; the resonant converter includes an inductor Lr, a capacitor Cr, and an inductor Lk; the inductor Lr is connected to the full-bridge inverter circuit; the inductor Lk is connected to the three-winding transformer; the current sharing resistor Ro is connected to the inductor Lk; and the three-winding transformer includes primary winding coils respectively connected to the two current sharing circuits, and a secondary winding coil connected to the chamber load.

The application discloses a kind of plasma processing equipment and its control method, for the problem that remote plasma source or ion trap is needed in existing free radical etching, leading to the complexity of equipment, low efficiency of gas inlet and outlet, independent controllable radio frequency coil structure is used in center and edge.In the first process based on free radical processing, the edge coil is controlled to run at high power, and the center coil can run at zero power, the plasma excitation is transferred to the edge of the reaction cavity, and the characteristics of long-life diffusion of free radicals and short-life annihilation of ions are used to remove ions in situ.The application does not need additional ion filtering device, greatly simplifies the structure of the equipment, reduces the gas flow resistance, improves the response speed of gas inlet and outlet and the process cycle efficiency;At the same time, the diffusion of ions to the substrate is effectively inhibited, the pure free radical reaction characteristics are maintained, the conversion to reactive ion etching is avoided, especially suitable for atomic layer etching process, significantly improves the production capacity and processing precision.

The application provides a corrosion-resistant coating preparation method and relates to the technical field of semiconductor processing. The application forms a multi-level and high-performance corrosion-resistant coating system through the construction of a micro-arc oxidation ceramic transition layer, the precise regulation of a chelating agent on a rare earth sol and the application of ultraviolet light curing technology. The method not only significantly improves the adhesion of the coating to the substrate, the uniformity of the coating and the curing efficiency, but more importantly, effectively regulates the micro-chemical state of the corrosion-resistant functional layer, thereby optimizing the coating performance according to specific application requirements and effectively solving the severe challenges faced by the surface protection of the aluminum cavity of a remote plasma source in the field of semiconductor equipment manufacturing.

This invention relates to a remote plasma cleaning method, cleaning gas group, and cleaning system for a semiconductor deposition chamber. The chamber is used for chemical vapor deposition or plasma-enhanced chemical vapor deposition to form silicon-based dielectric films. The method includes the following steps: S1, providing a first gas; S2, introducing the first gas into the discharge region of a remote plasma source, and activating the first gas in the discharge region to form an activated gas containing active fluorine species; S3, introducing the activated gas into the chamber, so that the activated gas contacts the silicon-based dielectric deposits on the inner surface of the chamber to remove at least a portion of the deposits. This invention achieves cleaning of silicon-based dielectric deposits by remotely activating fluorine-containing organic ethers with plasma, eliminating the polymerization tendency of fluorine-containing unsaturated compounds, improving repeatability by bypassing oxygen-containing gases, reducing consumption by endpoint detection, and reducing the impact of CO2e by combining GWP100 limitation.

The application discloses a method and system for measuring dissociation rate of process gas in a remote plasma source. The method comprises: feeding a mixed gas containing inert gas and process gas to be measured into the remote plasma source; directly collecting plasma emission spectrum through an optical window at the end of a vertical exhaust pipe directly below; calculating the dissociation rate according to the spectral line intensity ratio of the inert gas and dissociated atoms; and setting a sample in a horizontal branch pipe on the side of the vertical exhaust pipe to verify the accuracy of the dissociation rate through process effect. The system comprises a remote plasma source, a vertical exhaust pipe, a horizontal branch pipe, a spectrum collection unit and a data processing unit. The application adopts an integrated structure of in-situ spectrum collection and synchronous process verification, eliminates the transmission delay and particle recombination loss of traditional FTIR detection, establishes a direct quantitative corresponding relationship between diagnostic data and process effect, and is suitable for dissociation rate measurement of various process gases.

Embodiments of the disclosure include a method of depositing a gap-fill material on a semiconductor substrate, comprising: forming a passivation layer on a surface of a contact structure by introducing a hydrogen gas and an oxygen gas and / or water from a remote plasma source to a processing chamber, and depositing a metal gap-fill material over a portion of the passivation layer to fill the feature formed in the surface of the semiconductor substrate. The contact structure includes a feature formed in a surface of the semiconductor substrate. The feature comprises an opening that is defined by a substrate, a lower dielectric material disposed over the substrate, and an upper dielectric material disposed over the lower dielectric material, and the passivation layer is formed over the substrate, the lower dielectric material, and the upper dielectric material.