299 results about "Remote plasma" patented technology

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

The invention discloses a dissociation rate testing device of a remote plasma source in the field of remote plasma sources. The dissociation rate testing device is characterized in that the remote plasma source is used for dissociating process gas, and a gas outlet is communicated with an etching testing table through a water cooling pipeline; the gas ionization detection device comprises a maintenance gas input control module, an output detection unit and an output calculation unit, the maintenance gas input control module is used for controlling the amount of input maintenance gas, the output detection unit is used for detecting the amount of residual maintenance gas, and the output calculation unit is used for calculating the dissociation rate; the Fourier infrared spectrometer is used for collecting infrared spectrum data of the residual maintenance gas; the RPS control test bench is used for detecting and controlling the air inlet flow, the pressure in the cavity and the cooling water flow of the remote plasma source; the tail gas treatment equipment is used for treating the residual maintenance gas. According to the testing device, full-process monitoring and closed-loop control of the plasma source operation state are realized, and the dissociation rate detection precision and the process stability are improved.

The invention belongs to the technical field of plasmas, and provides a remote plasma generator, which comprises an ionization cavity, an ignition assembly, a magnetic core assembly and a heat dissipation assembly, and is characterized in that an air channel is formed in the ionization cavity; the ignition assembly is used for conducting excitation ignition on gas in the gas channel to form plasma. The ignition assembly comprises a dielectric sheet, a sealing structure and an ignition structure, and the dielectric sheet is attached to the ionization cavity; the sealing structure is arranged on the outer side of the dielectric sheet; the ignition structure is used for performing excitation ignition on gas; an anodic oxidation coating film is formed on the inner wall of the ionization cavity; an anodic oxidation coating film is formed on the surface of the dielectric sheet through an anodic oxidation process. The anodic oxidation coating film is formed on the surface of the dielectric sheet, the dielectric sheet serves as a dielectric material, meanwhile, the anodic oxidation coating film on the surface is tightly attached to the anodic oxidation coating film in the ionization cavity, the contact surface stress is increased, the dielectric sheet is prevented from cracking, gas corrosion caused by plasma bombardment is effectively reduced, and the service life is prolonged.

The invention relates to the technical field of plasmas, in particular to a remote plasma source working point judgment method, device and equipment and a medium. The mass spectrum dissociation rate is calculated according to the first mass spectrum and the second mass spectrum; calculating a spectral dissociation rate according to the spectrogram; performing correction calculation on the mass spectrum dissociation rate and the spectral dissociation rate based on the initial prior Gaussian distribution model to obtain a corrected dissociation rate; when the corrected dissociation rate meets the dissociation rate required by the process, calculating an actual reaction rate according to the spectrogram and a preset emission peak height threshold value; when the actual reaction rate is equal to the reaction rate threshold value, a feedback signal reaching the process working point is generated; mass spectrum data and spectral data are mutually verified in real time, the contradiction between single-mode detection precision and process compatibility is overcome, errors such as signal attenuation, interference and peak overlapping are reduced, the reliability of dissociation rate detection is remarkably improved, meanwhile, a working point is judged in combination with correction of the dissociation rate and the actual reaction rate, stability control is enhanced, and the process precision and the yield are improved.

The invention discloses an ignition control method of a remote plasma source in the technical field of remote plasma sources, which comprises the following steps: S1, setting a gas current excitation threshold value, and introducing excitation gas; s2, judging whether an ignition signal is received or not, and if yes, closing a relay and entering a constant current stage; s3, whether system ignition is normal or not is judged, and if not, the ignition voltage is adjusted through a self-learning type ignition threshold value calibration method; s4, the output power is improved, and the ignition voltage is adjusted through an ignition threshold calibration method during the period; s5, entering a constant power stage when the output power reaches the full-load power; according to the self-learning type ignition threshold value calibration method, gas flow, gas pressure and cavity temperature are collected in real time, a current load impedance value is predicted through an LSF-BP model, and an ignition voltage threshold value is updated according to the current load impedance value. According to the method, the ignition threshold is dynamically adjusted according to the operation condition, the ignition stability can be effectively improved, and equipment damage and maintenance cost are reduced.

The invention provides a remote plasma source device and thin film deposition equipment, the remote plasma source device comprises a microwave assembly and a resonant cavity, and the microwave assembly is used for conducting microwaves; one end of the resonant cavity is connected with the microwave assembly, the resonant cavity is provided with a resonant cavity, an air inlet and an air outlet, the resonant cavity is located in the resonant cavity, and the resonant cavity is communicated with the microwave assembly, the air inlet and the air outlet; wherein target gas enters the resonant cavity through the gas inlet, microwaves enter the resonant cavity through the microwave assembly and ionize the target gas, and the ionized target gas flows out through the gas outlet. The remote plasma source device is designed by adopting a microwave resonance principle, and microwaves have high frequency, so that the remote plasma source device has a very wide working pressure range, the process suitability of the remote plasma source device is improved, and the remote plasma source device can be applied to different process conditions, especially some middle and high pressure process conditions. The remote plasma source device can efficiently ionize target gas, and the film deposition efficiency is improved.

The invention relates to the technical field of semiconductor equipment, in particular to a remote plasma source cleaning system and semiconductor process equipment. The remote plasma source cleaning system provided by the invention comprises a front-section pipeline remote plasma source which is arranged in a front-section pipeline and is used for receiving gas and dissociating the gas to generate plasma; the valve plate is directly connected with the front-section pipeline remote plasma source and is used for bearing a carbon film generated by reaction in the process cavity; the vacuum pump is connected with the valve plate and is used for extracting waste gas generated by the valve plate and residual gas after cleaning; wherein the front-section pipeline remote plasma source is used for cleaning a carbon film on the valve plate. The cleaning speed consistency of the valve plates on the two sides is achieved, the cleaning effect of the valve plates is improved, space is saved, and maintenance is convenient.

The utility model provides a plasma cleaning device, and belongs to the technical field of semiconductor production equipment, the plasma cleaning device comprises a cavity, and a chamber is arranged in the cavity; the cover plate covers the upper end of the cavity; the remote plasma source is connected to the central position of the protruding part; the gas blocking part is arranged in the conical cavity; the first gas homogenizing plate is arranged below the gas blocking part; the second gas uniformizing plate is arranged below the first gas uniformizing plate; and a substrate table. The cover plate and the gas blocking part can uniformly disperse plasma gas fed by a remote plasma source into the cavity, then the plasma gas is further homogenized through the first gas homogenizing plate to ensure the gas uniformity of a substrate area, and meanwhile, the vacuum mechanism is generally connected to the bottom of the cavity, so that the gas is downwards pumped through the second gas homogenizing plate during gas pumping, and the gas uniformity of the substrate area is ensured. The gas uniformity in the chamber can be effectively ensured, so that the etching uniformity and the etching rate are improved.

The invention discloses two-stage pressure regulation plasma etching cleaning equipment and a wafer processing method, the equipment comprises a main chamber, a remote plasma source, an auxiliary chamber, a vacuum pump, a first valve plate, a second valve plate and a flow limiting plate, and the flow limiting plate is provided with a flow limiting hole; a pressure difference foundation is laid through a flow limiting hole, flow fluctuation is dynamically compensated through cooperation of a second valve plate and a pressure regulating valve, millisecond-level precise control over the pressure of the double cavities can be achieved, and it can be guaranteed that efficient operation can be achieved in the two working modes; the wafer processing method aims at a polysilicon gate or a polysilicon-based structure, in the photoresist removing stage, free radicals react with etching residues, all reaction products are gaseous, and gaseous products can be pumped out by a vacuum pump; through the etching and degumming integrated synergistic process, the characteristics of the polycrystalline silicon material and the advantages of two-stage pressure regulation and control equipment are fully utilized, and the balance of efficiency, cost and environmental protection is realized while the process quality is guaranteed.

The invention belongs to the technical field of remote plasma sources, and provides a remote plasma source cavity oxidation film stability improving method which comprises the steps that high-temperature steam hole sealing treatment is conducted on an aluminum material subjected to surface pretreatment; cutting to remove the diaspore layer on the surface; and performing mixed gas passivation on the dissociation cavity and circulating for preset times, wherein the mixed gas passivation comprises pre-passivation, hydration passivation and synergistic passivation. Firstly, high-temperature steam hole sealing is carried out on an oxide layer, then a surface diaspore layer is cut, the number of surface active sites is increased, and OH bond adsorption is facilitated; then pre-passivation, hydration passivation and synergistic passivation are carried out, and circulation is carried out for preset times, so that the stability of OH bonds is ensured, and the service life of the RPS cavity is prolonged; a random forest algorithm is used for determining the proportion of mixed gas, and the lower limit of an RPS power operation window is reduced by influencing the OH bond coverage density on the surface of an oxide film layer, so that the deposition rate requirement of an FCVD process is met.

The invention belongs to the technical field of remote plasma sources, and provides a remote plasma source load impedance disturbance protection control method and device. The method comprises the following steps: collecting gas flow, gas pressure and reaction chamber temperature of a reaction chamber; obtaining a load impedance prediction value according to the load impedance prediction model; and controlling the system to work in a constant power stage or a constant current stage according to whether the load impedance predicted value F is in a fluctuation stable interval. According to the method, the load impedance value F can be predicted by using the load impedance prediction model under different gas flows, pressures and cavity temperatures, whether the working state is stable or not is determined according to the load impedance value, and the system is controlled to work in a constant power stage or a constant current stage. Gas load fluctuation and plasma dynamic real-time cooperative regulation and control are achieved, mixing disturbance during gas switching is effectively restrained, and the problem of plasma instability is solved; the situation that a power device is damaged due to overlarge current caused by gas load fluctuation is avoided, and the service life of the remote plasma source is prolonged.

Disclosed is semiconductor manufacturing equipment. The semiconductor manufacturing equipment includes: a remote plasma source used configured to generate plasma; a reaction chamber coupled to the remote plasma source, and defining a space in which a wafer is processed; an exhaust pipeline coupled to the reaction chamber through an exhaust port, and configured to discharge by-products generated in the reaction chamber; a first pipeline coupled to the reaction chamber; a second pipeline coupled to the exhaust pipeline through the exhaust port; and an analyzer configured to analyze a first gas mixture received from the reaction chamber through the first pipeline.

The invention discloses an air outlet heat dissipation water pipe structure of a remote plasma source in the field of remote plasma sources, and the air outlet heat dissipation water pipe structure comprises a multi-section variable-diameter pipeline which is formed by sequentially connecting at least three pipe sections with different diameters, and the diameter of the pipe section close to an air outlet is larger than that of the pipe section at the far end. The inner diameter of the pipe section water channel close to the air outlet is smaller than that of the far-end pipe section water channel; the length and diameter of the pipe section and the inner diameter of the water channel are calculated and determined based on plasma source input power, gas flow rate and cooling liquid temperature rise parameters. According to the air outlet heat dissipation water pipe structure, the heat dissipation efficiency and the flow resistance are balanced through the variable-diameter design, it is ensured that the heat dissipation requirement is matched with the flow pressure drop, the problem of free radical recombination caused by too high local temperature of the air outlet is solved, the dissociation rate measurement precision is improved, and the heat dissipation efficiency is improved.

A wafer boot cleaning device comprising: a cleaning cavity; a remote plasma source in communication with the cleaning cavity for providing a cleaning plasma in the cleaning cavity; a vacuum extractor communicating with the cleaning cavity so that the cleaning cavity is in a negative pressure environment; and a wafer boat in which the silicon substrates of several solar cells are transported and which is housed in the cleaning cavity.

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

The utility model belongs to the technical field of semiconductor technology, and discloses a plasma cleaning device and semiconductor equipment. The plasma cleaning device comprises a remote plasma source, a first cleaning pipeline and a second cleaning pipeline, wherein the remote plasma source is used for generating plasma. The first cleaning pipeline is connected to the remote plasma source and the reaction chamber, and the second cleaning pipeline is connected to the same remote plasma source and the exhaust pipeline and is connected to the upstream of the exhaust control valve. According to the device, the plasma can be directly input into the reaction chamber and the exhaust pipeline through the first cleaning pipeline and the second cleaning pipeline respectively, so that the plasma is prevented from being inactivated before reaching the exhaust control valve, the exhaust control valve can be thoroughly cleaned, the phenomena of accumulation, blockage and blockage of byproducts are avoided, and the service life of the reaction chamber is prolonged. Therefore, the time cost and the labor cost of disassembly and cleaning are reduced, and the efficiency of semiconductor process equipment is improved.

The invention relates to the technical field of semiconductor surface cleaning, and discloses a remote plasma-assisted semiconductor etching surface cleaning method. The method comprises the following steps: configuring a remote plasma generating device and setting an initial parameter combination; then collecting surface state data of the semiconductor wafer, and constructing a surface state change matrix after multi-dimensional preprocessing; inputting the matrix into a multi-modal feature integration model for feature integration, and constructing a plasma action anomaly feature matrix according to the feature integration; iteratively optimizing the initial parameter combination by adopting a dynamic optimization algorithm, and setting device operation parameters according to the optimized parameters; a three-dimensional surface cleaning state model is constructed based on wafer surface impedance distribution data, and a mapping relation between model parameters and surface pollutant components is established; and finally dynamically adjusting device operation parameters according to the mapping relation. According to the method, through multi-dimensional data processing, feature integration, parameter optimization and dynamic adjustment, the accuracy and adaptability of semiconductor etching surface cleaning are improved.

Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

The invention belongs to the technical field of remote plasma sources, and provides a remote plasma source dissociation rate detection method which comprises the following steps: acquiring infrared spectrum data of a remote plasma source; inputting the infrared spectrum data collected for multiple times into a pre-trained plasma source ionization identification model, respectively obtaining characteristic spectrum peak values, and calculating an average value of the characteristic spectrum peak values; in the acquisition process, compensating environmental interference through a parameter regulation and control mechanism, so that a characteristic spectrum peak value and the residual gas concentration form a positive correlation relationship; and calculating the dissociation rate based on the average value of the characteristic spectrum peaks. According to the method, the dissociation rate of the remote plasma source is monitored in real time, and the environmental interference is regulated and controlled by a parameter regulation and control mechanism, so that the characteristic spectrum peak value and the residual gas concentration form a positive correlation relationship, the dissociation rate can be solved by replacing the residual gas concentration with the characteristic spectrum peak value, the precision is ensured, and the working efficiency is improved. The method is suitable for real-time closed-loop control of multi-element gas plasma dissociation rate detection in a semiconductor technology.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

The utility model provides a semiconductor cleaning device and semiconductor process equipment with the same. The semiconductor cleaning device comprises a first remote plasma source cleaning system and a second remote plasma source cleaning system. The first remote plasma source cleaning system and the second remote plasma source cleaning system are connected with a reaction cavity, a base is arranged in the reaction cavity, a first air inlet is formed in the top of the reaction cavity, and a second air inlet is formed in the side wall of the reaction cavity; the first remote plasma source cleaning system is communicated with the first air inlet; the second remote plasma source cleaning system is communicated with the second air inlet; the vertical height from the second air inlet to the bottom of the reaction cavity is smaller than the vertical height from the lower surface of the base to the bottom of the reaction cavity; the second remote plasma source cleaning system shares the cleaning gas source of the first remote plasma source cleaning system.

The invention discloses a remote plasma reaction chamber and a remote plasma source system. The remote plasma reaction chamber comprises a first flange, a cavity structure and a second flange, the cavity structure is located on one side of the first flange and comprises a three-dimensional metal split ring, a three-dimensional metal closed ring and a plurality of insulating supporting columns. Wherein the three-dimensional metal split ring comprises an opening, and the three-dimensional metal split ring is located on the inner wall side of the three-dimensional metal closed ring; the plurality of insulating support columns are positioned between the three-dimensional metal split ring and the three-dimensional metal closed ring, and are used for supporting the three-dimensional metal split ring; the three-dimensional metal opening ring is reused as a first electrode; the three-dimensional metal closed loop is reused as a second electrode; the second flange is located on the side, away from the first flange, of the cavity structure. The remote plasma reaction chamber and the plasma source system provided by the invention are simple in structure and not easy to crack, and can improve the problem that the chamber structure is easy to crack.

The invention discloses electrothermal adsorption type tail gas treatment equipment for RPS dissociation rate testing in the field of remote plasma sources. The electrothermal adsorption type tail gas treatment equipment comprises a heating system, a water vapor injection system, a cooling system and an adsorption system which are communicated in sequence, the heating system comprises a sectional reaction tube, and the temperature field of the sectional reaction tube is distributed progressively from the gas inlet end to the gas outlet end; the adsorption system comprises a first-stage solid adsorption layer and a second-stage circulating spraying system, the sectional type reaction tube is of a three-section coaxial nested structure and comprises a preheating section, a main decomposition section and a deep cracking section, and each section independently controls the temperature and is heated through a high-frequency induction coil. According to the electric heating adsorption type tail gas treatment equipment, step-by-step decomposition of NF3 is achieved through sectional heating, harmful gas (such as HF) is efficiently neutralized in combination with a multi-stage adsorption system, harmful substances in tail gas can be effectively removed, and environmental pollution is reduced.

Embodiments are directed to a remote plasma system. In an example, a remote plasma system includes a first tube, a second tube, a first isolation component coupled between a first end of the first tube and a first end of the second tube, a second isolation component coupled between a second end of the first tube and a second end of the second tube, and a first capacitive element coupled to the first isolation component. In one example, the second tube and the first tube together can have a circular or oval shape. In one example, a first magnetic core is surrounding a portion of the first tube proximate the first isolation component, a second magnetic core is surrounding a portion of the first tube proximate the second isolation component, a third magnetic core is surrounding a portion of the second tube proximate the first isolation component, and a fourth magnetic core is surrounding a portion of the second tube proximate the second isolation component.

To provide a processing apparatus that includes both a remote plasma unit and a direct plasma unit and a process.SOLUTION: In a processing tool 200, a processing chamber 201 that accommodates a semiconductor substrate 230 in a processing region 215 includes a remote plasma unit 206 and a direct plasma unit 208. One of the remote plasma unit and the direct plasma unit generates remote plasma and the other of the remote plasma unit and the direct plasma unit generates direct plasma. The combination of the remote plasma unit and the direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and / or from native oxide formation. The combination of the remote plasma unit and the direct plasma unit is used to deposit thin films on a substrate.SELECTED DRAWING: Figure 2

The present invention belongs to the technical field of plasma sources, and provides a fuzzy hysteresis control method and circuit for a high-power and high-stability remote plasma source. When the reaction chamber is successfully ignited, the plasma source system is controlled to operate at a constant power output with a fixed frequency and variable duty cycle, including: respectively obtaining error control variables e and ec according to the sampled current value and duty cycle, and the predicted current value and duty cycle; using the error control variables e and ec as the input values of a fuzzy controller to obtain the actual control quantity hr output by the fuzzy controller; obtaining the compensation variables of current and duty cycle based on the error control variables e and ec; using the actual control quantity hr as the hysteresis width value of a hysteresis comparator, and compensating the current and duty cycle at the k-th moment with the output compensation variables according to a preset rule. The method provided by the present invention can ensure a relatively wide power window, improve the working stability of the remote plasma source, and enhance the uniformity of the semiconductor manufacturing process.

This plasma processing device is provided with: a chamber; a substrate support unit provided in the chamber; a remote plasma source which is provided outside the chamber to generate a remote plasma; and a plasma introduction unit which introduces the remote plasma generated by the remote plasma source into the chamber. The remote plasma source comprises: a plasma generation container that has an annular internal space in which a plasma is generated; a gas supply unit that supplies a gas to the plasma generation container; a pair of opposed electrodes that are provided annularly along the annular space of the plasma generation container; an on / off switchable high-frequency power supply for forming a high-frequency electric field between the pair of electrodes; and a coil which is provided spirally around the plasma generation container, and to which a high-frequency current is supplied to form a looped magnetic field between the pair of electrodes.

To provide a sputter deposition apparatus.SOLUTION: A sputter deposition apparatus (100) comprising a remote plasma generating arrangement (106) arranged to provide a plasma (120) for sputter depositing a target material (102) in a sputter deposition region (112), a confining arrangement arranged to provide a confining magnetic field to substantially confine the plasma to the sputter deposition region, a substrate (104) provided in the sputter deposition region, and one or more target support assemblies (108) arranged to support one or more targets in the sputter deposition region to effect sputter deposition of the target material on the substrate, wherein the confinement arrangement confines the remote plasma to the target support assembly such that, in use, target material is deposited as a first region on the substrate, target material is deposited as a second region on the substrate, and an intermediate region between the first region and the second region is free of target material. 2.SELECTED DRAWING: Figure 1