93 results about "Remote plasma" patented technology

The utility model belongs to the technical field of semiconductor technology, and discloses a plasma cleaning device and semiconductor equipment. The plasma cleaning device comprises a remote plasma source, a first cleaning pipeline and a second cleaning pipeline, wherein the remote plasma source is used for generating plasma. The first cleaning pipeline is connected to the remote plasma source and the reaction chamber, and the second cleaning pipeline is connected to the same remote plasma source and the exhaust pipeline and is connected to the upstream of the exhaust control valve. According to the device, the plasma can be directly input into the reaction chamber and the exhaust pipeline through the first cleaning pipeline and the second cleaning pipeline respectively, so that the plasma is prevented from being inactivated before reaching the exhaust control valve, the exhaust control valve can be thoroughly cleaned, the phenomena of accumulation, blockage and blockage of byproducts are avoided, and the service life of the reaction chamber is prolonged. Therefore, the time cost and the labor cost of disassembly and cleaning are reduced, and the efficiency of semiconductor process equipment is improved.

The invention provides a mesa side wall passivation method for a class-II superlattice infrared detector and the infrared detector, and belongs to the field of semiconductor manufacturing. The problems of high interface state density and large dark current caused by a natural oxide layer rich in Sb2O5 formed by exposing the side wall of the aluminum antimonide or arsenic aluminum antimonide barrier layer to the atmosphere are solved; the method comprises the following steps of: cleaning and drying a second-class superlattice infrared detector chip subjected to mesa etching, and then loading the second-class superlattice infrared detector chip into a sample cavity of ALD (Atomic Layer Deposition) equipment; vacuumizing and heating; introducing high-purity hydrogen into a remote plasma source, starting the remote plasma source, selectively reducing the unstable natural oxide layer on the surface of the side wall of the barrier layer of the chip into volatile gas through hydrogen plasma, and pumping away the volatile gas through a vacuum system; after hydrogen plasma treatment is finished, a gas path is switched to an ALD precursor to form a passive film on the side wall of the barrier layer; cooling and taking the sheet; the invention is applied to the infrared detector.

One example provides a processing tool comprising a processing chamber and a remote plasma generator (RPG) fluidly connected to the processing chamber. The processing tool further comprises an RPG gas supply system for mixing and delivering gases to the RPG. The RPG gas supply system comprises a first RPG gas supply line for delivering a first gas at a first, lower flow rate to the RPG, a second RPG gas supply line for delivering a second gas at a second, higher flow rate to the RPG, a junction connecting the first RPG gas supply line and the second RPG gas supply line, an orifice in the first RPG gas supply line, a divert valve on the second RPG gas supply line for diverting the flow away from the RPG and a common RPG gas supply line connecting the junction to the RPG.

Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.

The present application relates to the technical field of PECVD equipment cleaning, and discloses a PECVD equipment cleaning method, system, device and storage medium, which comprises the following steps: generating free radical control parameters and pressure control parameters based on film layer information; adjusting the gas ratio of a gas supply unit and the plasma source power of a double-remote plasma source unit based on the free radical control parameters, so as to initialize the free radical concentration distribution inside the cavity; controlling the vacuum exhaust unit to perform staged vacuumizing on the cavity based on the pressure control parameters, so as to initialize the pressure field inside the cavity; controlling the double-remote plasma source unit to perform in-situ cleaning on the cavity; after the in-situ cleaning is completed, acquiring the cleaning effect index inside the cavity through a detection unit; if the cleaning effect index shows that the cleaning is up to standard, resetting the internal environment of the cavity and generating a cleaning completion signal; the present application solves the problems of mismatching and incompleteness in the prior art, and improves the PECVD equipment cleaning quality.

Methods for pre-cleaning a substrate having metal and dielectric surfaces are described. A substrate including a surface structure having a metal bottom, a dielectric sidewall, and a field of dielectric is exposed to a dual plasma process in a processing chamber to remove chemical residues and / or impurities from the metal bottom, the dielectric sidewall, and / or the field of dielectric, and / or to repair surface defects in the dielectric sidewall and / or the field of dielectric. The dual plasma process includes a direct plasma and a remote plasma.

A method is provided for cleaning deposition residue from a processing chamber of a processing tool. The method comprises introducing a reactive cleaning species generated by a remote plasma into the processing chamber. An in-situ plasma is formed at a processing station within the processing chamber while introducing the reactive cleaning species generated by the remote plasma into the processing chamber.

This invention relates to the field of semiconductor process chamber cleaning technology, specifically to a semiconductor process chamber cleaning gas composition based on HFO-1447fz, a remote plasma cleaning method, and a closed-loop control method. The main cleaning gas is HFO-1447fz (CAS134190-34-8), accounting for 30% to 70% of the total molar fraction of the composition; the co-gas is selected from one or two of CF3I and C2F5I, accounting for 5% to 25% of the total molar fraction of the composition; the auxiliary regulating gas is selected from one or more of He, Ne, and Kr, accounting for 15% to 55% of the total molar fraction of the composition; the content of fluorine-containing unsaturated impurity compounds containing C=C or C≡C bonds in the cleaning gas composition is ≤0.08 mol. This invention uses HFO-1447fz as the main cleaning gas, combined with CF3I, C2F5I synergistic gases and rare gases for auxiliary regulation, to form a highly efficient cleaning system. The special molecular structure of HFO-1447fz can generate highly active fluorine radicals after plasma activation, which, together with the catalytic effect of iodine radicals, improves the removal rate of silicon-based dielectric deposits.

The invention discloses a composite ceramic cavity for a remote plasma source and a preparation method of the composite ceramic cavity, and belongs to the technical field of semiconductor manufacturing equipment. A composite ceramic cavity main body is integrally sintered by Al2O3-BN composite ceramic and is provided with an air inlet, an air outlet and a communicated hollow channel, the inner wall is an exposed composite ceramic surface, a chemical silvering layer is arranged on the outer wall corresponding to a plasma area, and an inorganic protective layer is coated outside the silvering layer; wherein the mass ratio of Al2O3 is 85%-95%, the mass ratio of BN is 5%-15%, the thickness of the cavity is 5-10 mm, the density is larger than or equal to 3.6 g / cm < 3 >, the thickness of the silver layer is 5-20 microns, and the thickness of the inorganic protective layer is 0.5- The composite ceramic cavity solves the problems that an anodic oxidation dielectric layer of an existing metal cavity is prone to erosion and stripping, metal corrosion pollution is caused, and the maintenance cost is high, inner wall corrosion can be fundamentally avoided, and it is ensured that process gas is pure.

The invention belongs to the technical field of remote plasma sources, and discloses a remote plasma source system based on 172nm ultraviolet light auxiliary starting, which comprises a remote plasma source and an ultraviolet light pre-ionization device at a gas inlet of the remote plasma source, the ultraviolet pre-ionization device comprises a shell, the shell is provided with a gas flow channel and a sealed gas cavity which are separated by a light-transmitting partition plate, the sealed gas cavity is filled with xenon, and the gas flow channel is communicated with a gas inlet of a remote plasma source and used for circulation of process gas; the positive electrode plate and the negative electrode plate are arranged on two opposite sides of the shell and are used for exciting the xenon to generate 172nm ultraviolet light when alternating voltage is introduced; the ultraviolet light can penetrate through the light-transmitting partition plate to enter the gas flow channel; the mesh electrode is arranged in the gas flow channel and is used for being matched with the ultraviolet light to carry out pre-ionization treatment on the process gas when the mesh electrode is electrified; the method has the advantages that plasma starting of high-impedance gas is efficiently achieved, the starting success rate and the process stability are improved, and meanwhile pollution is avoided.

A method of performing pulsed remote plasma etching includes arranging a substrate in a processing chamber configured to perform pulsed remote plasma etching, setting at least one process parameter of the processing chamber, supplying at least one gas mixture to an upper chamber region of the processing chamber, supplying, in an ON period, a first voltage to coils arranged around the upper chamber region to energize the at least one gas mixture and generate plasma within the upper chamber region of the processing chamber, turning off the first voltage in an OFF period to discontinue generating plasma within the upper chamber region of the processing chamber, and alternating between supplying the first voltage in the ON period and turning off the first voltage in the OFF period to generate pulsed remote plasma within the upper chamber region of the processing chamber.

In some embodiments, a showerhead assembly includes a heated showerhead having a heater plate and a gas distribution plate coupled together; an ion filter spaced from the heated showerhead; a spacer ring in contact between the heated showerhead and the ion filter; a remote plasma region between the heated showerhead and the ion filter; an upper isolator spaced from the spacer ring and supported on the ion filter; a sealing ring fastened to the heated showerhead sealing against the upper isolator and pushing the upper isolator against the ion filter; a gap between a bottom of the gas distribution plate and a top of the ion filter, the gap being in fluid communication with the remote plasma region; a first passage extending through the heater plate; and a second passage in communication with the first passage and extending through the gas distribution plate, the second passage extending to the gap.

Embodiments disclosed herein include a plasma source. In an embodiment, the plasma source includes a plurality of plasma legs connected to each other by corner connectors. In an embodiment, each plasma leg comprises a conductive shell, a magnetic layer around the conductive shell, and a primary coil in the magnetic layer.

A remote plasma processing system includes a plasma generator configured to generate plasma in an upper region of a processing chamber. A dual gas diffusing device is arranged between the upper region and a lower region of the processing chamber. The dual gas diffusing device is configured to supply metastable species and ions from the upper region to the lower region and a reactant gas to the lower region separately from the metastable species and ions. A substrate support is arranged in the lower region of the remote plasma processing system and includes a resistive heater. A first voltage source is configured to supply power to the resistive heater. A pulsed DC voltage source is configured to supply a pulsed DC bias to the resistive heater.

A plasma processing apparatus integrates an inductively coupled plasma (ICP) chamber and a capacitively coupled plasma (CCP) chamber. The ICP chamber and the CCP chamber are in fluid communication with each other through a showerhead located between the ICP chamber and the CCP chamber. The substrate is supported on a susceptor in the CCP chamber. The ICP chamber generates a remote plasma in the ICP chamber, while the CCP chamber generates a direct plasma in an environment adjacent the substrate. In some embodiments, a remote plasma generated by the ICP chamber may assist in depositing a first layer on a substrate, while a direct plasma generated by the CCP chamber may assist in etching or processing the first layer, or depositing a second layer on a substrate, without having to transfer the substrate between modules or between stations.

A semiconductor processing system is provided. The system may have: a processing chamber defining an interior volume; a foreline in fluid connection with the internal volume and configured to receive process gas from the internal volume, the foreline having a foreline network and a foreline outlet conduit downstream of the foreline network; a throttle valve within the foreline outlet conduit, including a movable gate having an orifice, and configured to control gas flow through the foreline; and a gas injector in the foreline network and configured to direct a buffer gas into a conduit of the foreline network. The system may have a remote plasma source interface fluidly connected to the foreline outlet conduit, downstream of the interior volume, and having a plasma channel configured to direct a remote plasma flow into the foreline outlet conduit.

This invention provides a remote plasma cleaning kit and method for a PECVD chamber. The kit includes a chamber body, a remote plasma source, a spray head, a liner assembly, and a movable heater. The chamber body comprises an outer chamber and an inner chamber nested within it. The remote plasma source is connected to the chamber body. The spray head is positioned in the upper space between the outer and inner chambers. The liner assembly includes a top liner and a bottom liner stacked along a direction away from the spray head, each liner having uniformly distributed evacuation holes arranged in a row. The liner assembly and the inner chamber together define an evacuation channel. The movable heater is embedded in the liner assembly and moves vertically along it. This invention improves the uniformity and stability of the PECVD chamber cleaning process, significantly increases cleaning efficiency, and reduces particulate contamination in the chamber.

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.

The invention relates to the field of photovoltaic equipment, and discloses a plate-type PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment air inlet and radio frequency system which is arranged on a cavity cover of equipment. The device comprises nine special gas inlets, four remote plasma source gas inlets, a radio frequency power supply feed-in system cooperating with the special gas inlets in quantity and space distribution, and a multi-stage split-flow gas pipeline system with active adjustment capability. The nine special gas inlets form a uniform gas atmosphere of'peripheral symmetrical surrounding + center vertical injection ', and each special gas inlet is correspondingly provided with a radio frequency power supply feed-in point. The four remote plasma source air inlets are symmetrically distributed along the center line of the air distribution box and located in the four evenly-divided areas. According to the multi-stage split-flow gas pipeline system, a main pipeline is communicated with each gas inlet and each cleaning port through a plurality of split-flow branches, metering valves are arranged on the plurality of split-flow branches, and the flow of each split-flow branch is controlled through a flow controller. Therefore, the uniformity of the special gas and the cleaning effect of the RPS are improved.

Methods for repairing and replenishing carbon content of low-k dielectric films are provided. In some embodiments, the methods include generating plasma radicals in a remote plasma source, flowing a precursor gas comprising a recovery precursor into a processing region, and exposing the precursor gas and a low-k film on a substrate in the processing region to plasma radicals from the remote plasma source to decrease a k-value and increase a carbon content of the low-k film.

This invention belongs to the field of remote plasma source technology and provides a low recombination rate gas dissociation cavity structure, including an inlet, an inlet-end long cavity, a short cavity, an outlet-end long cavity, an outlet, an ignition wire, a vacuum pump, and an outlet gas pressure gauge. The upper end of the inlet-end long cavity is connected to the inlet and is grounded; the upper end of the short cavity is connected to the lower end of the inlet-end long cavity; the upper end of the outlet-end long cavity is connected to the lower end of the short cavity and is grounded; the outlet is connected to the lower end of the outlet-end long cavity; the ignition wire is connected to the short cavity; the cavity has an inner diameter; the cavity length; and the outlet diameter S=L. · ， The value ranges from 25% to 35%. This invention increases the outlet area of ​​the gas dissociation chamber, reduces the recombination rate of free radicals after gas dissociation, and thus efficiently generates active free radicals, providing high reaction throughput for etching / deposition, thereby improving chip production capacity and yield.

A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

The present invention provides a remote plasma reactor for a semiconductor manufacturing facility, the reactor comprising: a plasma reaction chamber providing a ring-shaped plasma reaction space in which a plasma reaction occurs; and a magnetic core unit coupled to the plasma reaction chamber to surround at least a partial section of the plasma reaction space. Source gases that have passed through a gas inlet are sprayed in a direction away from the center of the plasma reaction space so that the source gases form vortexes in the plasma reaction space.

The invention relates in particular to a method for producing a device comprising at least two thin layers and intended for use in particular in the fields of optoelectronics and photovoltaics, said method comprising the following steps: supplying a silicon (c-Si) wafer (2), loading said silicon (c-Si) wafer (2) into a first reactor to produce a thin layer of germanium (Ge) (3) by plasma-assisted chemical vapor deposition, optionally with a silicon (Si) gradient in the first few nanometers, so as to obtain an intermediate device, loading said intermediate device into a second reactor, then deposition and growth by epitaxy of a thin layer of gallium arsenide (GaAs) (4) by remote plasma chemical vapor deposition (RP-CVD). Figure for the abstract: [Fig. 1]

The embodiment of the specification provides a kind of plasma enhanced chemical vapor deposition equipment, including window structure, equipment cavity and remote plasma;Window structure is installed on the shell of equipment cavity by clamp;Remote plasma is used to convert process gas in equipment cavity into plasma state and generate fluorine ion;Remote plasma is connected with window structure by cleaning pipeline, and switch is arranged on the cleaning pipeline, and the switch is used to transport fluorine ion to the surface of window structure through the cleaning pipeline to clean the surface of window structure.By this window structure, by opening the switch, fluorine ion generated by remote plasma work can be transported to the surface of window body through the cleaning pipeline, and the surface film layer of the surface of window body is reacted to realize the cleaning of window body, to ensure the observation effect of window to the reaction process in equipment;When cleaning work is completed, close the switch, to avoid excessive cleaning caused by repeated cleaning to cause damage to window.

A method of coating a plasma channel of a plasma source, comprises providing at least one electrolyte having one or more chelating agents therein, treating at least one surface to produce a processed surface, smoothing the surface of the processed surface with at least one post processing technique to produce at least one smoothed processed surface, and cleaning the smoothed surface.

This invention discloses a plasma generator and a microwave remote plasma source system. The plasma generator includes a reaction housing and at least one microwave radiation component located within the cavity of the reaction housing. The microwave radiation component includes a metal rod and a heat dissipation insulating tube, the heat dissipation insulating tube completely surrounding the entire outer surface of the metal rod within the cavity of the reaction housing. The metal rod is used to receive microwave energy to ionize process gas within the cavity of the reaction housing. This invention provides a plasma generator and a microwave remote plasma source system that can improve the ionization effect of process gas and the plasma density within the cavity of the reaction housing, as well as improve plasma purity and heat dissipation efficiency of the metal rod.

The utility model discloses a graphite boat dry cleaning device based on remote plasma, which comprises a plasma excitation unit, a cleaning chamber, a vacuum unit, a gas collection chamber and a uniform gas regulation and control chamber, and the plasma excitation unit and the vacuum unit are both arranged on the outer side of the cleaning chamber; the plasma excitation unit is connected with the cleaning chamber through a plasma feed-in pipeline, a graphite boat to be cleaned is placed in the cleaning chamber, and plasma airflow excited by the plasma excitation unit flows into the cleaning chamber through the plasma feed-in pipeline; the bottom of the cleaning chamber is provided with a uniform gas regulation and control chamber, the end part of the uniform gas regulation and control chamber is provided with a gas collection chamber, the gas collection chamber is connected with a vacuum unit through a vacuum pipeline, and gas in the cleaning chamber flows through the uniform gas regulation and control chamber, the gas collection chamber and the vacuum unit and then is discharged. The graphite boat cleaning device has the advantages of being compact in structure, convenient to operate, high in plasma distribution uniformity, high in stability and the like, and the graphite boat cleaning quality is remarkably improved.

The application discloses a composite ceramic cavity for a remote plasma source and a preparation method thereof, and belongs to the technical field of semiconductor manufacturing equipment. The composite ceramic cavity body of the application is integrally sintered from Al2O3-BN composite ceramic, is provided with an air inlet, an air outlet and a hollow channel in communication, has a bare composite ceramic surface on the inner wall, is provided with a chemical silver plating layer on the outer wall corresponding to the plasma area, and is coated with an inorganic protective layer outside the silver layer. In the application, the mass percentage of Al2O3 is 85%-95%, the mass percentage of BN is 5%-15%, the thickness of the cavity is 5-10 mm, the density is greater than or equal to 3.6 g / cm 3 , the thickness of the silver layer is 5-20 mu m, and the thickness of the inorganic protective layer is 0.5-2 mu m. The composite ceramic cavity of the application solves the problems of easy erosion and peeling of the anodization dielectric layer of the existing metal cavity, metal corrosion pollution and high maintenance cost, fundamentally avoids the corrosion of the inner wall, and ensures the purity of the process gas.

The invention relates in particular to a method for producing a device comprising at least two thin layers and intended to be implemented in particular in the fields of optoelectronics and photovoltaics, the method comprising the following steps: providing a silicon wafer (c-Si) (2); loading the silicon wafer (c-Si) (2) into a first reactor in order to produce a thin germanium layer (Ge) (3) by plasma-assisted chemical vapor deposition, optionally with a silicon gradient (Si) in the first nanometers, so as to obtain an intermediate device; loading the intermediate device into a second reactor; then depositing and epitaxially growing a thin gallium arsenide layer (AsGa) (4) by chemical vapor deposition at low temperature and reduced pressure (Remote Plasma Chemical Vapor Deposition or RP-CVD).