475 results about "Remote plasma" patented technology

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

The invention belongs to the technical field of plasma sources, and provides a high-power high-stability remote plasma source fuzzy hysteresis control method and a circuit, when a reaction cavity is successfully ignited, a plasma source system is controlled to work at constant-frequency variable-duty-ratio constant-power output, and the method comprises the following steps: according to a sampled current value, a duty ratio, a predicted current value and a predicted duty ratio, calculating a constant-frequency variable-duty-ratio constant-power output value; respectively obtaining error control variables e and ec; the error control variables e and ec serve as input values of a fuzzy controller, and the actual control quantity hr output by the fuzzy controller is obtained; obtaining compensation variables # imgabs0 # and # imgabs1 # of the current and the duty ratio based on the error control variables e and ec; and taking the actual control quantity hr as the ring width value of a hysteresis comparator, and respectively compensating the current # imgabs4 # and the duty ratio # imgabs5 # at the moment k by outputting compensation variables # imgabs2 # and # imgabs3 # according to a preset rule. According to the method provided by the invention, a power window in a relatively wide range can be ensured, so that the working stability of the remote plasma source is improved, and the uniformity of a semiconductor manufacturing process is improved.

The invention discloses a dissociation rate testing device of a remote plasma source in the field of remote plasma sources. The dissociation rate testing device is characterized in that the remote plasma source is used for dissociating process gas, and a gas outlet is communicated with an etching testing table through a water cooling pipeline; the gas ionization detection device comprises a maintenance gas input control module, an output detection unit and an output calculation unit, the maintenance gas input control module is used for controlling the amount of input maintenance gas, the output detection unit is used for detecting the amount of residual maintenance gas, and the output calculation unit is used for calculating the dissociation rate; the Fourier infrared spectrometer is used for collecting infrared spectrum data of the residual maintenance gas; the RPS control test bench is used for detecting and controlling the air inlet flow, the pressure in the cavity and the cooling water flow of the remote plasma source; the tail gas treatment equipment is used for treating the residual maintenance gas. According to the testing device, full-process monitoring and closed-loop control of the plasma source operation state are realized, and the dissociation rate detection precision and the process stability are improved.

The invention belongs to the technical field of plasmas, and provides a remote plasma generator, which comprises an ionization cavity, an ignition assembly, a magnetic core assembly and a heat dissipation assembly, and is characterized in that an air channel is formed in the ionization cavity; the ignition assembly is used for conducting excitation ignition on gas in the gas channel to form plasma. The ignition assembly comprises a dielectric sheet, a sealing structure and an ignition structure, and the dielectric sheet is attached to the ionization cavity; the sealing structure is arranged on the outer side of the dielectric sheet; the ignition structure is used for performing excitation ignition on gas; an anodic oxidation coating film is formed on the inner wall of the ionization cavity; an anodic oxidation coating film is formed on the surface of the dielectric sheet through an anodic oxidation process. The anodic oxidation coating film is formed on the surface of the dielectric sheet, the dielectric sheet serves as a dielectric material, meanwhile, the anodic oxidation coating film on the surface is tightly attached to the anodic oxidation coating film in the ionization cavity, the contact surface stress is increased, the dielectric sheet is prevented from cracking, gas corrosion caused by plasma bombardment is effectively reduced, and the service life is prolonged.

The invention relates to the technical field of plasmas, in particular to a remote plasma source working point judgment method, device and equipment and a medium. The mass spectrum dissociation rate is calculated according to the first mass spectrum and the second mass spectrum; calculating a spectral dissociation rate according to the spectrogram; performing correction calculation on the mass spectrum dissociation rate and the spectral dissociation rate based on the initial prior Gaussian distribution model to obtain a corrected dissociation rate; when the corrected dissociation rate meets the dissociation rate required by the process, calculating an actual reaction rate according to the spectrogram and a preset emission peak height threshold value; when the actual reaction rate is equal to the reaction rate threshold value, a feedback signal reaching the process working point is generated; mass spectrum data and spectral data are mutually verified in real time, the contradiction between single-mode detection precision and process compatibility is overcome, errors such as signal attenuation, interference and peak overlapping are reduced, the reliability of dissociation rate detection is remarkably improved, meanwhile, a working point is judged in combination with correction of the dissociation rate and the actual reaction rate, stability control is enhanced, and the process precision and the yield are improved.