183results about How to "Reduce defects" patented technology

A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

The invention discloses a low-cost mass preparation method of high-quality graphene. The low-cost mass preparation method comprises the following steps that graphite and an additive undergo a local or intercalation reaction so that boundary functionalization or intercalated graphite formation is realized; and graphite is peeled by ball milling or an ultrasonic method so that graphene is obtained. The high-quality graphene has water solubility and can forms good graphene hydrosol. Compared with graphene obtained by the traditional chemical peeling method, the high-quality graphene provided by the invention can be prepared simply, has a low cost, less defects, good conductivity and high quality and is suitable for mass production. The high-quality graphene provided by the invention has wide application prospects in photoelectric devices such as copper indium gallium diselenide, cadmium telluride and dye sensitization solar cells and in fields of panel display, supercapacitors, field emitter materials, and lithium ion batteries.

An SRAM device and method of forming MOS transistors of the device having reduced defects associated with selective epitaxial growth in moat tip regions is discussed. The SRAM device comprises a core region and a logic region, logic transistors within the logic region of the SRAM, and selective epitaxial regions grown on both source and drain regions; and memory cell transistors within the core region of the SRAM, and having the selective epitaxial regions grown on only one of the source and drain regions. One method of forming the MOS transistors of the SRAM cell comprises forming a gate structure over a first conductivity type substrate to define a channel therein, masking one of the source and drain regions in the core region, forming a recess in the substrate of the unmasked side of the channel, epitaxially growing SiGe in the recess, removing the mask, and forming the source and drain extension regions in source/drain regions.

The invention relates to an all-solid state electrochromic device preparation method and prepared electrochromic glass, and solves the technical problems of complicated process, low yield and the like in existing electrochromic device preparation. A bottom transparent conducting layer, a lower pole electrochromic layer, an upper pole electrochromic layer and a top transparent conducting layer are sequentially deposited and grown on a transparent substrate, the upper pole electrochromic layer is directly deposited and grown on the lower pole electrochromic layer, an ion source is deposited on the upper pole electrochromic layer, the top transparent conducting layer is deposited and grown after the ion source is deposited, and finally, the device is prepared by heat treatment or optical treatment. Compared with traditional preparation technology, growth of an ion conduction layer is omitted, the technological process is simplified, yield is improved, and cost is reduced.

An interior enclosure part for automotive vehicles equipped with an airbag includes a rigid frame having an opening located in front of the inflatable airbag, and a panel blocking the opening. The part includes a closed-contour latching assembly surrounding the opening and rigidly attached to the frame. The panel has a peripheral rim pinched between the latching assembly and the frame. The panel includes a layer of plastic material and a flexible covering molded onto the layer of plastic material.

A display panel apparatus includes a planarizing film formed on a substrate, at least one pixel including a lower electrode; an organic EL layer; and an upper electrode which are formed above the planarizing film; an auxiliary electrode electrically connected to the upper electrode which is the opposite to the lower electrode; a display section including a plurality of the pixels; an electrode plate electrically connected to the auxiliary electrode and arranged to cover the planarizing film outside the display section, and the electrode plate has a hole exposing a part of a surface of the planarizing film. Furthermore, the display panel apparatus also includes a hole injection layer which is an inorganic material layer made of an inorganic material and covering the hole.

Provided is a lead frame having an improved wire bonding property of inner leads and an improved soldering property of outer leads and preventing defects with high producing yield, and a method of manufacturing the lead frame. The lead frame includes a plurality of inner leads formed with predetermined intervals between them; and a plurality of outer leads extended from the inner leads in length directions of the inner leads, each of which has an end portion overlapped with the inner lead and coupled thereto and the other end connected to neighboring outer lead by a supporting portion.

The invention belongs to the technical field of inorganic nanometer material preparation, and relates to a two-dimensional material quantum sheet and a preparation method thereof. Through the process, inorganic matters with the proper particle diameter are firstly used as auxiliary agents for ball milling; then, solvents are added for ultrasonic processing; finally, suction filtration is performed; filter liquid is centrifuged. The uniform and stable dispersion liquid of the two-dimensional material quantum sheet is obtained; the sheet layer dimension of the quantum sheet is between 1nm and 20 nm; the layer number is one to ten. Compared with the existing method, the method has the advantages that the resources are wide; the operation is simple and convenient, and the like. The prepared quantum sheet maintains the intrinsic property; the defects are few; the yield is very high; the two-dimensional material quantum sheet is hopeful to realize the mass production.

A process for fabricating a semiconductor device including the steps of introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film, applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film, irradiating a laser beam or an intense light to the crystalline silicon film, and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.

The invention discloses a modified prussian blue material, a sodium ion battery positive electrode plate and a preparation method. The preparation method for the modified prussian blue material at least comprises the steps of performing a reaction on methyl orange, ferric chloride and pyrrole based on a certain proportion to obtain a solution, then performing a reaction on the obtained solution with a mixed solution of sodium ferrocyanide and inorganic acid, and next, performing processing of centrifuging, washing, drying and the like to obtain the modified prussian blue material. Compared with the conventional synthesis method, the prepared modified prussian blue material is lower in crystal water content, less in defects, high in tubular polypyrrole conductivity and relatively high in environment stability, so that an electrolyte can permeate rapidly, and rapid diffusion of Na+ can be promoted to form a three-dimensional conductive network with prussian blue nanoparticles; therefore, the material conductivity is improved, and the material is novel and unique; in addition, the cycling performance and the rate capability of the material are greatly improved; and the modified prussian blue material is more suitable for application of an energy storage material, such as the positive electrode material of the sodium ion battery.

The invention provides an electrochemical preparation method of a graphene material. The preparation method comprises the following steps: using graphite electrodes as negative and positive electrodes respectively and one or more of 1-butyl-3-methylimidazolium dihydrogenphosphate, N-methyl pyrrolidone hydrosulfate, N-methyl pyrrolidone dihydrogenphosphate and 1-methylimidazolium hydrosulfate as an electrolyte, applying voltage of 3.1-6.0V, and obtaining highly expanded graphite at the negative and positive electrodes respectively; then adding the corresponding electrolyte to the expanded graphite according to (100:1)-(30:1), grinding for 3-6 hours, then transferring the expanded graphite to acetone and dimethyl formamide mixed liquor, carrying out centrifugation at 13000rpm, transferring the precipitate to dimethyl formamide, and carrying out centrifugation at 2000-10000rpm, thus obtaining a supernatant, namely a stable graphene solution, wherein the volume ratio of acetone to dimethyl formamide is (1.1:1)-(3:1). The preparation method has the beneficial effects that the preparation process of the graphene material produced by the preparation method is mild and simple and has a defect cure phenomenon, and the product graphene has few defects and high quality.

The invention discloses a method for preparing a polymer/inorganic nano particle composite material. The method is characterized by comprising the following steps: after mixing and pelleting a polymer and an inorganic nano particle according to a certain ratio, conveying aggregates through an extruder in a bidirectional stretching melt mixing and forming integrated device, preparing aggregates or a sheet through plasticizing and melting and under a bidirectional stretching-shearing acting force of a bidirectional stretching melt mixer, wherein the aggregates or the sheet is better in inorganic nano particle dispersing property, and excellent in performance. The polymer/inorganic nano particle composite material overcomes the defects of difficulty in dispersing and poor compatibility of the inorganic nano particle in a polymer melt; and the polymer/inorganic nano particle composite material has better mechanical property, barrier property, heat stability performance, and conductive property. The method is simple and easy to operate, simple in equipment, and convenient to produce in large scales.

The invention discloses a method for preparing a medical three-dimensional gradient netlike carbon fiber/ hydroxyapatite (HA)/ medical stone composite material. The method comprises the following steps of: weaving carbon fibers into a three-dimensional gradient netlike carbon fiber skeleton; performing surface modification treatment on the three-dimensional gradient netlike carbon fiber skeleton;and making nano HA and nano medical stone composite ceramic slurry, compounding the composite ceramic slurry and the three-dimensional gradient netlike carbon fiber skeleton by adopting a centrifugalforming machine, sintering, and thus obtaining the composite material. The method has the advantages that the three-dimensional gradient netlike carbon fiber reinforcing effect is good, much HA can be compounded in a high-porosity area, and the composite material has good surface bioactivity; a low-porosity area has high carbon fiber content, so that the mechanical property of the HA matrix is improved; size completeness, few defects and high density of a blank of the composite material can be ensured by adopting the centrifugal grouting forming machine; and the nano medical stone added into the HA matrix contains a large quantity of trace elements which are beneficial to human body, and is used as a reinforcing phase for improving the strength of the HA matrix.

The invention discloses an MXene modified composite diaphragm, a preparation method thereof, and application in a lithium-sulphur battery. In the MXene modified composite diaphragm disclosed by the invention, a basal membrane is a polyolefin diaphragm; a modification material is a composite of MXene and a polymer or inorganic particles; and the modification material is attached on the surface at one side of the polyolefin diaphragm. In-situ liquid-phase stripping of the A layer in MAX is carried out; a two-dimensional material MXene is synthesized through one step; and then, after being composited with the polymer or inorganic particles, the MXene material is subjected to suction filtration in vacuum, and attached on the polyolefin diaphragm, so that the MXene modified composite diaphragm is obtained. The MXene modified composite diaphragm is directly put in the lithium-sulphur battery; therefore, the ionic conductivity and the electronic conductivity of the battery are enhanced; simultaneously, polysulfide lithium is strongly adsorbed; the polysulfide lithium shuttle effect is inhibited; and thus, the performance and the security of the battery are greatly improved.

The invention discloses a smelting and casting method for 7-series aluminum alloy. The method includes the steps that first, according to the mass ratio, 0-0.12% of Si, 0-0.15% of Fe, 2.0%-2.2% of Cu, 2.3%-2.5% of Mg, 6.4%-6.9% of Zn, 0-0.03% of Ti, 0-0.1% of Zr, 0-0.05% of single impurities, 0-0.15% of gross impurities and the balance aluminum are mixed; and then casting is performed through the semi-continuous casting technology after smelting, refining and drossing, standing for heat preservation, on-line degassing refining and on-line refining; and the casting temperature is controlled to be 690-710 DEG C, the casting speed is 50-75mm/min, the single water flow rate is 2.8-3.4m<3>/h, and accordingly 7-series aluminum alloy casting ingots are obtained. The number of the defects of aluminum alloy cast rods produced through the method is small, the material property and finished product rate are improved, energy consumption is lowered, production cost is reduced, and the economic benefits are good.

The invention discloses a method for reducing a surface defect of stainless steel continues casting blank. The casting block meets the following requirement: when Ti is larger than and equal to 0 and is less than and equal to 0.1%, S is less than and equal to 0.08%, and Si is larger than and equal to 0.358%, or Si is less than 0.35%, aluminum content is 0.01-0.03%. An adaptive produce flow procedure is as follows: an electric furnace, an induction furnace or a revolving furnace-AOD furnace refining or VOD furnace refining-an argon flushing station or an LF furnace refining-continuously casting; and an AOD furnace or VOD steel ladle is at least used at once. The method comprises the following steps of: 1 adding liquid steel smelted from the electric furnace, the induction furnace or the revolving furnace into the AOD furnace or the VOD furnace to be refined; 2 argon flushing and stirring the liquid steel in steel ladle, wherein flushing and stirring tine is larger than and equal to 10 minutes, and the liquid steel can not be exposed to the air during stirring; and 3 putting the steel ladle into a continues casting machine, automatically opening the steel ladle, and forbidding opening water gap by means of oxygen blowing, wherein the technical requirement during continuously casting is as followings: continuous casting speed is larger than and equal to 1.0m/min, the fluctuation of the casting speed is not larger than +/-0.02m/min, casting negative slip time is lees than and equal to 0.20 seconds, and the liquid surface fluctuation of a crystallizer is not larger than +/-5m. The method obviously reduces the surface defect of the stainless steel continues casting blank with titanium content which is not larger than 0.10%.

Structures having an isolation structure including deuterium and a related method are disclosed. The deuterium is preferably substantially uniformly distributed, and has a concentration (based on total hydrogen atom content) greater than that found in naturally occurring hydrogen. One structure includes a substrate for a semiconductor device including an isolation structure within the substrate, the isolation structure including substantially uniformly distributed deuterium in a concentration (based on total hydrogen atom content) greater than that found in naturally occurring hydrogen. The substrate may include a semiconductor-on-insulator substrate. A method may include the steps of: providing an isolation structure in a substrate, the isolation structure including deuterium; and annealing to diffuse the deuterium into the substrate (prior to and/or after forming a gate dielectric). The structures and method provide a more efficient means for incorporating deuterium and reducing defects. In addition, the deuterium anneal can occur prior to gate dielectric formation during front-end-of-line processes, such that the anneal temperature can be high to improve deuterium incorporation with reduced anneal time.

The invention provides a gallium nitride nanowire and a preparation method thereof. The preparation method includes: under atmospheric pressure, chemical vapor deposition of elemental gallium, gallium oxide and an ammonia gas containing gas is carried out on a substrate loaded with a catalyst for preparation of the gallium nitride nanowire. The gallium nitride nanowire prepared by the preparation method has a periodic structure, and controllable morphology and sizes. The prepared gallium nitride nanowire having the periodic structure, compared with non periodic structure and straight gallium nitride nanowires prepared by the prior art, has more abundant exposed surfaces and improved photoelectrical properties, and has wide potential application value in the research and application of micro-nano optoelectronic devices. The preparation method is simple and easy to operate, and the use of high vacuum equipment which is a must in methods of the prior art is not needed.

A vertical field effect transistor includes a first source/drain region formed on or in a substrate. A tapered fin is formed a vertical device channel and has a first end portion attached to the first source/drain region. A second source/drain region is formed on a second end portion of the tapered fin. A gate structure surrounds the tapered fin.

The invention discloses a producing method of vibration resisting and heat isolating multi-hole ceramic with high intensity. The method comprises the steps as follows: grinding the porzite ball with purity bigger than 98.4 percent to the porzite powder with granularity smaller than 1 micrometers, adding mixed sol of zirconium hydroxide and yttrium hydroxide produced by adopting the commonly depositing method into the porzite powder, adding trolamine as the dispesant, mixing evenly, drying, calcining in a temperature range of 500 to 900 DEG C and then acquiring the evenly distributed zirconia/porzite powder body of the zirconia; then adding amylum into the ethanol without water, using ultrasonic to disperse and adds the amylum into the zirconia/porzite powder body. After the grain is produced, the invention adopts the dry pressing firstly and then the static press moulding , eliminates amylum when the indoor temperature is ascended to 700 DEG C, then quickly ascends temperature to 1500 to 1600 DEG C so as to burn to the vibration resisting and heat isolating porous ceramics with high intensity. The porous ceramics produced by the invention has high intensity, small aperture of the air hole, much centralized distribution, good thermal shock resisting capacity and heat isolating capacity.

Provided is a polyvinylidene fluoride resin composition in which inorganic pigment is well dispersed and which can form a film that suffers from little defect caused by poor dispersion and that has mechanical strengths suitable for practical use. Also provided are a film, a back sheet, and a solar cell module. A resin composition obtained by blending 100 parts by mass of a resin component consisting of 50 to 95% by mass (in total) of two kinds of polyvinylidene fluorides which are different in shape or melt flow characteristics and 5 to 50% by mass of polymethyl methacrylate with both 7 to 40 parts by mass of a white inorganic pigment and 0.01 to 7 parts by mass of an inorganic pigment for color matching, wherein at least one of the polyvinylidene fluorides exhibits an MFR (230 DEG C, 3.8kg load) of 3 to 35g/10min and the polymethyl methacrylate exhibits an MFR (230 DEG C, 10kg load)of 2 to 20g/10min.

The invention discloses a multilayered biological composite material and its preparation method and belongs to the field of biomedical material preparation. According to the biological composite material, titanium alloy is used as a matrix, titanium alloy + hydroxyapatite is an intermediate layer, and hydroxyapatite is a biological ceramic surface layer. The preparation comprises the following technological steps: carrying out mechanical alloying and ball-milling on titanium, niobium and zirconium powders, and drying to obtain a matrix mixed powder; adding hydroxyapatite, ball-milling and mixing powders after mechanical alloying of titanium, niobium and zirconium powders, so as to obtain an intermediate-layer mixed powder; and respectively adding the matrix mixed powder, the intermediate-layer mixed powder and a hydroxyapatite powder to a lower layer, an intermediate layer and an upper layer of a graphite mould, sintering by a spark plasma furnace, and cooling in the furnace to obtain the multilayered biological composite material. The multilayered composite material prepared in the invention has similar mechanical properties with human bone, and biological activity of the material is greatly raised. The technology is clean, simple and low-cost, and is easy to realize industrialization.

Pattern transfer is achieved by forming a first patterned hard mask layer with a circuit pattern and a plurality of dummy patterns on a substrate, forming a second pattern mask layer on the substrate, exposing the circuit pattern of the first pattern mask layer, and removing a portion of the substrate exposed by the first patterned mask layer, so as to transfer the circuit pattern to the substrate.

The invention discloses an LED (light emitting diode) epitaxial wafer and a manufacture method thereof, belonging to the technical field of semi-conductors. The epitaxial wafer comprises a substrate, a buffer layer, an unmixed GaN layer, an n type layer, a multi-quantum well layer and a p type layer which are sequentially stacked on the substrate, the epitaxial wafer further comprises a current expansion layer arranged between the n type layer and the multi-quantum well layer, wherein the current expansion layer is of a superlattice structure, the superlattice structure is formed by alternate stacking of a first sub layer and a second sub layer, the first sub layer and the second sub layer are made from AlxGa1-xN, ingredient contents of Al in adjacent first and second sub layers are different, and x is more than zero and less than one. According to the technical scheme, a speed of electrons in the n type layer is lowered before entering into the multi-quantum well layer, the electrons and electron holes are enabled to be fully compounded and luminescent, the compounding efficiency is increased, the current expansion layer is of the superlattice structure, so that the stress between the substrate and the n type layer can be effectively released by the multi-layer structure, defects in the epitaxial wafer are reduced, and efficiency of inner quantum is improved.

An embodiment of the invention discloses a manufacturing method for zirconium dioxide ceramic green-pressings. The method comprises the following steps: (1) dry pressing performing: after nanometer zirconium dioxide pelleting powders are put into a dry pressing mold, performing dry pressing performing to obtain a preformed blank, wherein pressure in dry pressing performing is 2-100 MPa; (2) temperature isostatic compaction: after the preformed blank which is preformed by dry pressing is put into a temperature isostatic pressing mold, performing temperature isostatic compaction, to obtain a zirconium dioxide ceramic green-pressing. The method manufactures the zirconium dioxide ceramic green-pressing by firstly performing dry pressing performing and then performing temperature isostatic compaction. Since under the action of pressure and temperature of the temperature isostatic pressing, the preformed blank still has good fluidity, nanometer zirconium dioxide powder particles can be stacked in a compact method, and gas and molten additives among the powders are fully discharged. The method makes a ceramic body more compact and defects less, so that the intensity, density, and light transmittance of sintered nanometer zirconium dioxide ceramic are improved.

The invention provides a grooved Schottky device structure and a manufacturing method thereof. The grooved Schottky device comprises an N-type heavily-doped substrate, an N-type lightly-doped silicon epitaxial layer, at least two grooves, N-type highly-doped polycrystalline silicon layers, a metal silicide layer, a positive electrode and a negative electrode, wherein the N-type heavily-doped silicon epitaxial layer is formed on the substrate; the grooves are formed in the silicon epitaxial layer; a first silicon dioxide layer, a middle medium layer and a second silicon dioxide layer are formed in sequence on the surface of each groove; the N-type highly-doped polycrystalline silicon layers are filled into the grooves; the metal silicide layer is formed on the surface of the silicon epitaxial layer; the positive electrode is formed on the surface of the metal silicide layer; the back electrode is formed on the back surface of the N-type heavily-doped substrate. According to the grooved Schottky device structure, a first silicon dioxide layer/middle medium layer/second silicon dioxide layer compound structure is taken as a groove medium layer, so that the leakage current can be reduced remarkably, the requirement on the increase of the breakdown voltage and the reduction of the leakage current are met, a narrow groove structure can be adopted, the Schottky potential barrier contact area is increased, and the positive break-over voltage is lowered.

The invention provides a traditional Chinese medicine enzyme drink with the same source of medicine and food. The drink is made of medlar, licorice, hawthorn, mangosteen, jujube, chrysanthemum, light bamboo leaves, kudzu root, poria cocos, sealwort, gardenia, cassia, orange peel, peach kernel, Malt, dandelion, lily, plum seed, coix seed, green tea, ginseng (artificially planted), maca powder, cordyceps militaris, pine pollen, donkey-hide gelatin, lotus seed, bellflower, sea buckthorn, cinnamon, yam, orange, chicory, lotus leaf, mulberry leaf , Yizhi kernel, raspberry, Jujube kernel and Hovenia dulcis seed; the technical solution provided by the invention makes a synergistic effect between various raw materials through scientific compatibility, and eliminates the defect of a single raw material; it has the functions of balancing endocrine, purifying Blood, improve immunity, promote digestion and absorption, prevent cell mutation, strengthen the body, beautify the skin, nourish blood and replenish qi, etc. It is suitable for people of different ages as a daily health drink.

When a BGA package device is mounted to another substrate and tested for packaging strength, solder balls (8) frequently come detached in places where the edges of a semiconductor chip (1) align with the centers of the solder balls (8) on a BGA substrate (9) in the perpendicular direction of the substrate. In a semiconductor device of the present invention, the center of a semiconductor chip and the center of a BGA substrate to which the chip is mounted do not coincide with each other, and edges of the semiconductor chip do not align with the ball center positions on the BGA substrate in a direction perpendicular to the chip.

A flexible display apparatus includes a display panel, a case and a plurality of driving circuits. The display panel is configured to display an image. The display panel includes a first display part, a second display part and a hinge display part. The hinge display part is interposed between the first and second display parts. The hinge display part is configured to be foldable. The case is configured to cover the display panel. The case forms a hinge thickness with the hinge display part and it also forms a peripheral thickness at an end of the case facing away from the hinge display part. The peripheral thickness is greater than the hinge thickness. The driving circuits are disposed between a rear surface of the first display part and the case. Therefore, thickness of the display panel is decreased and its portability is improved.

The invention discloses a method for precisely casting a top cover of a mincing machine, which belongs to the field for machining components of a mincing machine. The method comprises the following steps of (1) producing a metal mold; (2) producing a wax mold; (3) inspecting and finishing the wax mold; (4) producing a mold shell; (5) removing wax; (6) roasting the mold shell; (7) pouring; and (8) vibrating the mold. By strictly controlling different parameters of each step, few defects exist in the obtained mold shell, the method is capable of machining and better suitable for machining the mincing machine top cover with the hole pitch being less than 5mm, and the machining precision is improved.