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183results about How to "Reduce defects" patented technology

Modified prussian blue material, sodium ion battery positive electrode plate and preparation method

InactiveCN106960956ALow crystal water contentReduce defectsCell electrodesSecondary cellsWater contentPyrrole
The invention discloses a modified prussian blue material, a sodium ion battery positive electrode plate and a preparation method. The preparation method for the modified prussian blue material at least comprises the steps of performing a reaction on methyl orange, ferric chloride and pyrrole based on a certain proportion to obtain a solution, then performing a reaction on the obtained solution with a mixed solution of sodium ferrocyanide and inorganic acid, and next, performing processing of centrifuging, washing, drying and the like to obtain the modified prussian blue material. Compared with the conventional synthesis method, the prepared modified prussian blue material is lower in crystal water content, less in defects, high in tubular polypyrrole conductivity and relatively high in environment stability, so that an electrolyte can permeate rapidly, and rapid diffusion of Na+ can be promoted to form a three-dimensional conductive network with prussian blue nanoparticles; therefore, the material conductivity is improved, and the material is novel and unique; in addition, the cycling performance and the rate capability of the material are greatly improved; and the modified prussian blue material is more suitable for application of an energy storage material, such as the positive electrode material of the sodium ion battery.
Owner:SHANGHAI SINOPOLY JIAHUA BATTERY TECH

Method for preparing medical three-dimensional gradient netlike carbon fiber/ hydroxyapatite (HA)/ medical stone composite material

The invention discloses a method for preparing a medical three-dimensional gradient netlike carbon fiber/ hydroxyapatite (HA)/ medical stone composite material. The method comprises the following steps of: weaving carbon fibers into a three-dimensional gradient netlike carbon fiber skeleton; performing surface modification treatment on the three-dimensional gradient netlike carbon fiber skeleton;and making nano HA and nano medical stone composite ceramic slurry, compounding the composite ceramic slurry and the three-dimensional gradient netlike carbon fiber skeleton by adopting a centrifugalforming machine, sintering, and thus obtaining the composite material. The method has the advantages that the three-dimensional gradient netlike carbon fiber reinforcing effect is good, much HA can be compounded in a high-porosity area, and the composite material has good surface bioactivity; a low-porosity area has high carbon fiber content, so that the mechanical property of the HA matrix is improved; size completeness, few defects and high density of a blank of the composite material can be ensured by adopting the centrifugal grouting forming machine; and the nano medical stone added into the HA matrix contains a large quantity of trace elements which are beneficial to human body, and is used as a reinforcing phase for improving the strength of the HA matrix.
Owner:LIAONING UNIVERSITY OF TECHNOLOGY

Method for reducing surface defect of stainless steel continues casting blank

ActiveCN101633038AAvoid metal lossReduce defectsLiquid steelOpen water
The invention discloses a method for reducing a surface defect of stainless steel continues casting blank. The casting block meets the following requirement: when Ti is larger than and equal to 0 and is less than and equal to 0.1%, S is less than and equal to 0.08%, and Si is larger than and equal to 0.358%, or Si is less than 0.35%, aluminum content is 0.01-0.03%. An adaptive produce flow procedure is as follows: an electric furnace, an induction furnace or a revolving furnace-AOD furnace refining or VOD furnace refining-an argon flushing station or an LF furnace refining-continuously casting; and an AOD furnace or VOD steel ladle is at least used at once. The method comprises the following steps of: 1 adding liquid steel smelted from the electric furnace, the induction furnace or the revolving furnace into the AOD furnace or the VOD furnace to be refined; 2 argon flushing and stirring the liquid steel in steel ladle, wherein flushing and stirring tine is larger than and equal to 10 minutes, and the liquid steel can not be exposed to the air during stirring; and 3 putting the steel ladle into a continues casting machine, automatically opening the steel ladle, and forbidding opening water gap by means of oxygen blowing, wherein the technical requirement during continuously casting is as followings: continuous casting speed is larger than and equal to 1.0m/min, the fluctuation of the casting speed is not larger than +/-0.02m/min, casting negative slip time is lees than and equal to 0.20 seconds, and the liquid surface fluctuation of a crystallizer is not larger than +/-5m. The method obviously reduces the surface defect of the stainless steel continues casting blank with titanium content which is not larger than 0.10%.
Owner:SHANXI TAIGANG STAINLESS STEEL CO LTD

Structure Having Isolation Structure Including Deuterium Within A Substrate And Related Method

InactiveUS20070259500A1Reduce defectsImprove deuterium incorporationSolid-state devicesSemiconductor/solid-state device manufacturingChemistryDeuterium
Structures having an isolation structure including deuterium and a related method are disclosed. The deuterium is preferably substantially uniformly distributed, and has a concentration (based on total hydrogen atom content) greater than that found in naturally occurring hydrogen. One structure includes a substrate for a semiconductor device including an isolation structure within the substrate, the isolation structure including substantially uniformly distributed deuterium in a concentration (based on total hydrogen atom content) greater than that found in naturally occurring hydrogen. The substrate may include a semiconductor-on-insulator substrate. A method may include the steps of: providing an isolation structure in a substrate, the isolation structure including deuterium; and annealing to diffuse the deuterium into the substrate (prior to and/or after forming a gate dielectric). The structures and method provide a more efficient means for incorporating deuterium and reducing defects. In addition, the deuterium anneal can occur prior to gate dielectric formation during front-end-of-line processes, such that the anneal temperature can be high to improve deuterium incorporation with reduced anneal time.
Owner:GLOBALFOUNDRIES INC

Method for producing high-strength shock resistant heat insulating porous ceramic

The invention discloses a producing method of vibration resisting and heat isolating multi-hole ceramic with high intensity. The method comprises the steps as follows: grinding the porzite ball with purity bigger than 98.4 percent to the porzite powder with granularity smaller than 1 micrometers, adding mixed sol of zirconium hydroxide and yttrium hydroxide produced by adopting the commonly depositing method into the porzite powder, adding trolamine as the dispesant, mixing evenly, drying, calcining in a temperature range of 500 to 900 DEG C and then acquiring the evenly distributed zirconia/porzite powder body of the zirconia; then adding amylum into the ethanol without water, using ultrasonic to disperse and adds the amylum into the zirconia/porzite powder body. After the grain is produced, the invention adopts the dry pressing firstly and then the static press moulding , eliminates amylum when the indoor temperature is ascended to 700 DEG C, then quickly ascends temperature to 1500 to 1600 DEG C so as to burn to the vibration resisting and heat isolating porous ceramics with high intensity. The porous ceramics produced by the invention has high intensity, small aperture of the air hole, much centralized distribution, good thermal shock resisting capacity and heat isolating capacity.
Owner:SOUTH CHINA UNIV OF TECH

LED (light emitting diode) epitaxial wafer and manufacture method thereof

ActiveCN103236480AImprove compound efficiencyReduce defectsSemiconductor devicesSuperlatticeElectron hole
The invention discloses an LED (light emitting diode) epitaxial wafer and a manufacture method thereof, belonging to the technical field of semi-conductors. The epitaxial wafer comprises a substrate, a buffer layer, an unmixed GaN layer, an n type layer, a multi-quantum well layer and a p type layer which are sequentially stacked on the substrate, the epitaxial wafer further comprises a current expansion layer arranged between the n type layer and the multi-quantum well layer, wherein the current expansion layer is of a superlattice structure, the superlattice structure is formed by alternate stacking of a first sub layer and a second sub layer, the first sub layer and the second sub layer are made from AlxGa1-xN, ingredient contents of Al in adjacent first and second sub layers are different, and x is more than zero and less than one. According to the technical scheme, a speed of electrons in the n type layer is lowered before entering into the multi-quantum well layer, the electrons and electron holes are enabled to be fully compounded and luminescent, the compounding efficiency is increased, the current expansion layer is of the superlattice structure, so that the stress between the substrate and the n type layer can be effectively released by the multi-layer structure, defects in the epitaxial wafer are reduced, and efficiency of inner quantum is improved.
Owner:HC SEMITEK ZHEJIANG CO LTD

Grooved Schottky device structure and manufacturing method thereof

The invention provides a grooved Schottky device structure and a manufacturing method thereof. The grooved Schottky device comprises an N-type heavily-doped substrate, an N-type lightly-doped silicon epitaxial layer, at least two grooves, N-type highly-doped polycrystalline silicon layers, a metal silicide layer, a positive electrode and a negative electrode, wherein the N-type heavily-doped silicon epitaxial layer is formed on the substrate; the grooves are formed in the silicon epitaxial layer; a first silicon dioxide layer, a middle medium layer and a second silicon dioxide layer are formed in sequence on the surface of each groove; the N-type highly-doped polycrystalline silicon layers are filled into the grooves; the metal silicide layer is formed on the surface of the silicon epitaxial layer; the positive electrode is formed on the surface of the metal silicide layer; the back electrode is formed on the back surface of the N-type heavily-doped substrate. According to the grooved Schottky device structure, a first silicon dioxide layer/middle medium layer/second silicon dioxide layer compound structure is taken as a groove medium layer, so that the leakage current can be reduced remarkably, the requirement on the increase of the breakdown voltage and the reduction of the leakage current are met, a narrow groove structure can be adopted, the Schottky potential barrier contact area is increased, and the positive break-over voltage is lowered.
Owner:CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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