155 results about "Reactive gas" patented technology

The invention discloses a magnetron sputtering coating method with uniform coating and high target material utilization rate, and belongs to the technical field of film preparation, and the method realizes high-precision coating through whole-process collaborative optimization of pretreatment, sputtering, deposition and post-treatment. The substrate is cleaned in cooperation with radio-frequency pulse focusing bombardment; an electromagnetic coil group containing a temperature compensation coil is used for target sputtering, a magnetic field is dynamically adjusted in combination with laser profile sensing and a PID self-adaptive algorithm, and a direct current pulse-radio frequency composite power supply is matched to solve the target problem; in the deposition stage, a quartz crystal instrument is used for closed-loop film thickness control, metal film pulse gas supply and compound film reaction gas phase adjustment; gradient temperature rise is carried out according to data of an X-ray stress meter in post-treatment, and argon is used for dynamic protection and impurity prevention. According to the magnetron sputtering coating method with uniform coating and high target material utilization rate, the uniformity of coating and the target material utilization rate are improved, and the technological adaptability and stability of coating are improved.

To deposit nanolaminates on a substrate, the substrate is mounted in a vacuum recipient on a substrate support in a peripheral region of a holder. The recipient comprises a sputter station with a sputtering target and a plasma treatment station with a plasma source, wherein the sputtering target and the plasma source are directed to different sections of the holder. A sputtering gas is introduced into the recipient, a reactive gas is introduced into the sputter station and the plasma treatment station, a magnetron discharge is ignited in the sputter station, and a plasma is ignited in the plasma treatment station. By rotation of the holder, the substrate is successively exposed to the magnetron discharge to deposit a well layer of high refractive index material having a layer thickness between 0.1 nm and 6 nm and to the plasma to produce a layer of low refractive index material.

The invention provides a method for improving the film thickness stability of semiconductor process equipment. The method comprises the following steps: judging whether the accumulated film thickness of a spray header reaches a preset threshold value or not, and if so, executing cleaning; the step of plasma heating is executed after cleaning is finished, the temperature of a spray header is increased through the bombardment effect of non-reactive gas plasma, and the problem that the film thickness jumps in the initial stage of cleaning is solved; when the deposition process is executed, the film thickness compensation step is executed according to the current accumulated film thickness data, the deposition time is adjusted by establishing a deposition rate attenuation model, and the problem that the film thickness is reduced under the high accumulated film thickness is solved. According to the invention, the defect of no active temperature control machine can be made up, and the film thickness fluctuation between wafers is controlled within 1%.

A fuel burner tube (1) for a combustion chamber burner comprises a tubular body (2) extending along a longitudinal axis with external (21) and internal (22) surfaces. The tubular body (2) has a premixing area (25) within the internal surface (22) where oxidant gas is premixed with fuel. One or more radially arranged through holes (3) on the internal surface (22) inject a lateral purging flow downstream toward the premixing area (25). A centerbody (4) within the tubular body (2) extends from a first end (23) to the premixing area (25), allowing the introduction of a central purging flow. At least one fuel injection channel (5), connectable to a fuel injection system, is positioned downstream of the centerbody (4) on the internal surface (22) in correspondence with the premixing area (25) to inject fuel into the premixing area (25).

The application discloses a kind of waste lithium battery black powder low-temperature efficient defluorination method, belong to battery material recycling technical field.The method is to place waste lithium battery black powder in flowing non-reactive gas, heated to 300~600 DEG C temperature and carried out defluorination treatment.This method uses flowing atmosphere in the sintering process and accurately controls temperature, uses airflow to carry out fluorides generated by pyrolysis to promote the rapid, deep decomposition of fluorides in black powder, while the crystal structure of waste lithium battery black powder is not damaged, solves the technical bottleneck of incomplete defluorination of waste lithium battery black powder, serious secondary reaction and high energy consumption in prior art, promotes the large-scale green regeneration of waste lithium battery positive material.

This application provides a wafer cleaning device and its control method. The support structure includes an upper support structure and a lower support structure. A rotating plate has multiple wafer holes. The rotating plate, the upper support structure, and the lower support structure constitute a processing chamber. The lower support structure has a vacuum pipeline and a purge pipeline. The purge pipeline includes a main pipe and multiple branch pipes connected to the main pipe. The main pipe includes an outer ring pipe and an inner guide pipe. The inner guide pipe has an air inlet channel. The extension direction of the air inlet channel makes an angle of 30°~60° with the axial direction of the inner guide pipe. A heating component is located between the outer ring pipe and the inner guide pipe to heat the purge gas to 200°C~300°C. The purge pipeline introduces purge gas into the processing chamber at a total flow rate of 155~165 L / min for a duration of not less than 10 min. The upper support structure has a gas supply component and an exhaust component. The gas supply component introduces reactive gas into the processing chamber. The exhaust component discharges the purge gas and the stripped particles at an exhaust pressure of not less than 500 Pa during the purge process. This improves wafer cleanliness.

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

According to an embodiment, a method for manufacturing a packaging substrate comprises: a preparation step to comprise a base substrate including a core layer, a first conductive layer disposed on the core layer, and an insulating layer disposed on the first conductive layer; and a desmear step to comprise desmearing the base substrate, thereby providing a packaging substrate. The insulating layer comprises a contact hole penetrating the insulating layer in a thickness direction. An upper surface of the first conductive layer comprises an exposed region exposed by the contact hole. In the desmear step, the base substrate is plasma-desmeared using a reactive gas comprising oxygen gas and a fluorine-based gas. In the desmear step, a ratio of a flow rate of the fluorine-based gas to a flow rate of the oxygen gas introduced into an atmosphere in which the base substrate is placed is 4.5 or more.

This invention discloses a control method, control system, and control device for reactive sputtering processes. The control method includes: during a preset initial time period after the reactive sputtering process starts, acquiring real-time target voltage data, calculating the standard deviation of the target voltage, and setting a dynamic gradient threshold based on the standard deviation; after the preset initial time period, acquiring the current target voltage in real-time at a preset sampling period and calculating the real-time rate of change of the target voltage; comparing the absolute value of the real-time rate of change with the dynamic gradient threshold; when the absolute value of the real-time rate of change is greater than the dynamic gradient threshold, it is determined to be a precursor to target poisoning, and a negative gas flow pulse signal is output to the gas mass flow controller to reduce the flow rate of the reactive gas. This invention can respond proactively, avoid target poisoning, reduce false triggering rate, and improve adaptability.

The invention relates to an ion beam etching device suitable for a large-size wafer and a vacuum etching machine. Comprising a vacuum cavity, an ion source arranged on the vacuum cavity, a sample carrying table and a gas injection device arranged in the vacuum cavity, wherein the ion source is used for outputting an ion beam, and the sample carrying table is used for carrying a large-size wafer; the gas injection device is arranged in a partitioned manner corresponding to the bearing area of the sample carrying table; the gas injection devices are respectively connected to a gas source through a gas mass flow valve; the gas source comprises inert gas and / or reactive gas; the gas mass flow valve is connected to a mass flow controller; the mass flow controller is used for carrying out independent flow regulation on the inert gas and / or reactive gas jetted in the gas jetting device of each partition according to flow control parameters, and dynamically regulating the atmosphere concentration on the surface of the large-size wafer so as to finely adjust the reaction rate; according to the technical scheme, the rate difference of different areas of the wafer can be compensated, and the etching uniformity of the large-size wafer is improved.

The utility model provides vapor deposition equipment. The vapor deposition equipment comprises a gas inlet device arranged at the top of a cavity, one end of the flow guide device surrounds the gas outlet side of the gas inlet device to define a channel for gas to pass through; the side heating device is located between the flow guiding device and the outer wall of the cavity and arranged outside the flow guiding device in a surrounding mode. The top support is located above the side heating device, one end is assembled on the side of the flow guiding device, and the other end extends towards the side wall of the cavity. The first heat insulation device is arranged in a structure defined by the top of the flow guide device, the top support and the top of the cavity. According to the vapor deposition equipment provided by the utility model, the first heat insulation device is arranged in the structure defined by the top of the flow guide device, the top bracket and the top of the cavity, so that the top bracket can support the first heat insulation device, and heat transfer from the side heating device below the top bracket to the top of the cavity is reduced or blocked through the first heat insulation device; therefore, the pre-reaction of the reaction gas near the spraying gas outlet side is reduced or avoided.

The present invention relates to a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a recording medium. The present invention aims to control the in-plane film thickness distribution of a film formed on a substrate. The semiconductor device manufacturing method of the present invention includes a step of preparing a substrate; and a step of supplying a non-reactive gas to the substrate from a first supply portion, supplying a non-reactive gas to the substrate from a second supply portion, and supplying a processing gas to the substrate from a third supply portion, the third supply portion being disposed on the opposite side of the first supply portion across a straight line passing through the center of the second supply portion and the substrate, and in the step of forming a film, the in-plane film thickness distribution of the film formed on the substrate is adjusted by controlling the balance between the flow rate of the non-reactive gas supplied from the first supply portion and the flow rate of the non-reactive gas supplied from the second supply portion.

This invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a processing unit, a storage unit, a processing circuit, a circulation circuit, and a gas supply circuit. The processing unit etches a polycrystalline silicon film or an amorphous silicon film formed on the substrate using an alkaline solution. The storage unit recovers and stores the solution used in the processing unit. The processing circuit supplies the solution stored in the storage unit to the processing unit. The circulation circuit removes the solution from the storage unit and returns the removed solution to the storage unit. The gas supply circuit is connected to the circulation circuit and supplies a non-reactive gas to the circulation circuit. The circulation circuit includes an outlet that discharges a mixture of the non-reactive gas supplied by the first gas supply circuit and the solution removed from the storage unit into the interior of the solution stored in the storage unit. Therefore, when the alkaline solution is recovered for reuse, the dissolved oxygen concentration of the solution can be efficiently reduced.

This invention provides a slow-release preparation method for a high-loading single-atom catalyst. Compared with existing technologies, this invention utilizes the ion exchange and interlayer confinement effects of montmorillonite to pre-confine the metal precursor within the montmorillonite interlayer, isolating it from the carbon and nitrogen precursors. Then, the reactive gas generated during pyrolysis slowly releases the metal precursor from the interlayer in situ, anchoring it onto the outer carbon and nitrogen support. This slow-release synthesis strategy enables targeted synthesis at single-atom sites, offering advantages such as high metal precursor utilization, pure single-atom sites, and high metal loading. Furthermore, the slow-release anchoring of the metal precursor effectively avoids nanoparticle formation, eliminating the need for subsequent acid washing and significantly reducing secondary pollution and high costs. In addition, the slow-release synthesized single-atom catalyst, when used to catalyze the activation of hydrogen peroxide to remove pollutants from water, exhibits advantages such as strong oxidative degradation ability, high pollutant removal efficiency, good catalytic stability, and a wide pH range.

This invention belongs to the field of photon counting detector manufacturing technology, specifically relating to a plasma treatment method for the crystal surface of a photon counting detector and the resulting photon counting detector. The treatment method employs a step-by-step plasma surface modification process. First, the crystal wafer surface is bombarded with plasma generated by the ionization of an inert gas. Then, a secondary bombardment is performed using plasma generated by the ionization of reactive gases such as oxygen and hydrogen. Simultaneously, key process conditions such as process gas flow rate, wafer orientation bias, processing time, cavity vacuum, radio frequency power, plasma parameters, and wafer spacing are systematically controlled. This step-by-step modification process achieves nanoscale modification of the crystal surface, effectively repairing surface damage caused by processing and forming a uniformly distributed surface modification layer. Photon counting detectors fabricated using this method can significantly reduce device leakage current, improve withstand voltage performance, optimize energy resolution, and improve photon counting rate and counting stability.

A method for depositing crystalline semiconductors onto a substrate is provided. In this method, an electrical voltage is applied between a metallic sputtering target and the anode of a magnetron sputtering unit to ignite a magnetron discharge. This discharge causes a particle flux from the sputtering target to the substrate and excites the reactive gas to an initial quantity of activated reactive gas plasma, resulting in the epitaxial growth of a crystalline semiconductor on the substrate.In this process, during the deposition of a semiconductor on the substrate, an additional power input is implemented into the reactive gas plasma, which excites the reactive gas to a second quantity of activated reactive gas plasma that is higher than the first quantity of activated reactive gas plasma, but which keeps the particle flux from the sputter target to the substrate the same or increases only disproportionately less than the increase in the first quantity of activated reactive gas plasma compared to the second quantity of activated reactive gas plasma.

This invention discloses a spouted bed reactor and method for selective carbon deposition on the outer surface of micron-sized powders, belonging to the fields of gas-solid reaction engineering and chemical vapor deposition technology. The reactor includes a sealed reaction chamber, within which a gas distribution zone, a spouted circulation zone, a main reaction zone, and a top buffer zone are sequentially arranged. A porous distribution plate and a carrier gas inlet are provided at the bottom, and a central spouted gas inlet can be provided to form a particle circulation path with a central upward flow and peripheral recirculation. A reactive gas introduction structure is provided in the main reaction zone to introduce reactive gas in the middle of the particle circulation path. An internal filter assembly can be installed at the top of the chamber to achieve gas-solid separation. Through the partitioned introduction of carrier gas at the bottom and reactive gas in the middle, a spatially separated gas-solid contact structure is formed within the reaction chamber.

The method for isolating a lithium precursor according to the embodiment of the present application includes the steps of preparing a primary precursor mixture including a primary lithium precursor and a primary transition metal precursor, mixing the primary precursor mixture with a precipitation solution in a reactor to form a precursor mixture, and injecting a non-reactive gas into the precursor mixture. Accordingly, the lithium precursor can be isolated with high purity and high efficiency.

In a film formation apparatus and a film formation method using magnetron sputtering, high reproducibility is achieved even when a reactive film is formed by simultaneously introducing a plurality of types of reactive gases into a vacuum chamber. [Solution] In a magnetron sputtering apparatus (10) according to the present invention, the flow rate Qd of an inert gas introduced into a vacuum chamber (12) is kept constant, and the angle θ of a conductance valve (22) is kept constant, i.e., the effective pumping speed at an exhaust port (14) of the vacuum chamber (12) is kept constant. Additionally, the sputtering power Es, the arc discharge power Ed, and the substrate bias voltage Vb are kept constant. Furthermore, a gas flow rate ratio Rq, which is the ratio between the flow rates Qr1 and Qr2 of the reactive gases introduced into the vacuum chamber (12), is kept constant, and a total gas flow rate Qa, which is the sum of the flow rates Qr1 and Qr2 of the reactive gases, is controlled so that the pressure P inside the vacuum chamber (12) is kept constant.

The method for producing lithium sulfide of the present application includes a mixing step of preparing mixed powder containing solid lithium hydroxide, solid sulfur, and a reducing agent containing carbon element; and a calcining step of calcining the mixed powder at a temperature of 600°C or higher and 1200°C or lower in a non-reactive gas or reducing gas atmosphere. In the calcining step, a gas accumulation inhibiting treatment is performed which inhibits accumulation of gas generated in the calcining step into the mixed powder. The gas accumulation inhibiting treatment is preferably performed at a temperature of 120°C or higher and 1200°C or lower.

The disclosure relates to lithium metal protection using reactive gas combinations. A passivation process for a lithium metal anode includes subjecting a lithium metal to a passivation gas having the following composition: two or more gases selected from the group consisting of CO2, O2, H2O, N2, HC, CO, H, He, F, and SiH4; and optionally, a rare gas. The passivation gas reacts with the lithium metal to form a passivation layer on the lithium metal having a depth of less than ten microns.

This technology provides a way to easily perform decorative coloring on a substrate. [Solution] The decorative film deposition apparatus comprises a chamber, a titanium particle emission unit including a titanium target disposed in the chamber and which imparts energy to the titanium target to release titanium particles, a gas supply unit connected to the chamber and which supplies a reactive gas, and a control unit which controls the gas supply unit. The gas supply unit has a carbon-containing gas supply unit which supplies a carbon-containing gas containing carbon atoms into the chamber, a nitrogen-containing gas supply unit which supplies a nitrogen-containing gas containing nitrogen atoms into the chamber, and a flow rate adjustment unit which can adjust the flow rate of the carbon-containing gas with respect to the flow rate of the nitrogen-containing gas, and the control unit adjusts the flow rate of the carbon-containing gas with respect to the flow rate adjustment unit to adjust the visible light reflectance of the film formed on the object to be deposited.

This invention provides a method for preparing a standard silicon wafer and a method for calibrating a flatness measurement device. The method for preparing the standard silicon wafer includes: providing a substrate; depositing a polycrystalline silicon layer on the surface of the substrate; and, during the deposition of the polycrystalline silicon layer, controlling the deposition temperature and / or the flow rate of the reactive gas to distribute the different sizes of the polycrystalline silicon layer according to a set ratio, thereby ensuring that the surface roughness of the polycrystalline silicon layer is within a target range; wherein the process conditions for depositing the polycrystalline silicon layer include: using a silicon source gas as the reactive gas, a deposition temperature selectable in the range of 800~1080℃, and a silicon source gas flow rate selectable in the range of 5~30 SLM. The preparation method provided by this invention controls the grain size of the polycrystalline silicon layer by controlling the deposition temperature and / or the flow rate of the reactive gas, thus enabling the repeatable and controllable preparation of a standard wafer with specific roughness and excellent uniformity for calibration of a flatness measurement device.

The present disclosure generally relates to a method that includes providing a photomask, wherein the photomask includes a trench defined by two sidewalls which are exposed, introducing the photomask into a controlled environment, and directing (i) one or more reactive gases, (ii) a laser, (iii) one or more reactive gases and a laser, or (iv) one or more reactive gases and an electron beam, to the two sidewalls to render a passivation layer adjacent to and in contact with each sidewall. An apparatus and the photomask are also described.

The present invention provides a technology with which it is possible to easily perform decoration for causing a base material to develop a color. This decorative film formation device comprises: a chamber; a titanium particle discharge unit which includes a titanium target disposed in the chamber and applies energy to the titanium target so as to discharge titanium particles; a gas supply unit which is connected to the chamber and supplies a reactive gas; and a control unit which controls the gas supply unit. The gas supply unit has: a carbon-containing gas supply unit for supplying a carbon-containing gas that contains carbon atoms into the chamber; a nitrogen-containing gas supply unit for supplying a nitrogen-containing gas that contains nitrogen atoms into the chamber; and a flow rate adjustment unit which is capable of adjusting the flow rate of the carbon-containing gas with respect to the flow rate of the nitrogen-containing gas. The control unit adjusts the visible light reflectance of a film that is formed on a film formation object by adjusting the flow rate of the carbon-containing gas using the flow rate adjustment unit.

A system and method for treating additive powder is provided. The method may include positioning the additive powder within a reactor chamber defined by the reactor; evacuating residual gases from the reactor chamber; increasing a reactor content temperature within the reactor chamber to a target temperature; agitating the additive powder; and injecting a gas mixture into the reactor chamber. The gas mixture includes a reactive gas for modifying a surface chemistry of the additive powder.

To provide a method for reusing a reactive gas by which the reduction of production cost and the improvement of production efficiency can be realized by using a used unreacted reactive gas in the production of electronic parts.SOLUTION: Separating and recovering a used and unreacted reactive gas from a used gas containing the used and unreacted reactive gas discharged as a result of a chemical reaction treatment using the reactive gas in manufacturing an electronic component, and reusing the separated and recovered used and unreacted reactive gas in the chemical reaction treatment, wherein the chemical reaction treatment is performed using the separated and recovered used and unreacted reactive gas in combination with an unused reactive gas; Making a flow rate per unit time of the used and unreacted reactive gas and a flow rate per unit time of the unused reactive gas different from each other, and / or making an input volume amount of the used and unreacted reactive gas and an input volume amount of the unused reactive gas different from each other.SELECTED DRAWING: Figure 1

The invention discloses a plasma activation bonding method and system for chip three-dimensional packaging. The plasma activation bonding method comprises the steps of chip pretreatment, plasma multi-stage activation, precise bonding and bonding post-treatment. Impurities on the bonding surface of the chip are removed through multi-step cleaning, then inert gas plasma etching activation and reactive gas plasma modification activation are carried out in sequence, then precise bonding is carried out in a controllable environment, residual stress is eliminated through annealing, and airtightness is detected. The system comprises a pretreatment module, a plasma activation module, a bonding module and a post-treatment module, and the integrated execution of the process is realized. According to the method, the problems of weak interface bonding force, large residual stress, poor airtightness and the like of a traditional process are solved, the bonding reliability and the product consistency are improved, the strict requirements of high-end chip packaging are met, and the method has high industrialization value.

The invention provides a silicon wafer back crystal growth prevention air curtain isolation device for thick epitaxial growth. In order to solve the problem that in a traditional thick epitaxial process, the back of a silicon wafer is prone to growing silicon due to gas surrounding seepage and edge negative pressure suction, a non-contact edge gas curtain barrier is combined with a micro-gap bearing mechanism, an annular oblique gas outlet seam is formed in the edge of the silicon wafer, and an isolation gas curtain surrounding the periphery of the silicon wafer is formed; the reaction gas is prevented from permeating to the back surface of the silicon wafer from a physical path; and meanwhile, a supporting micro-column is matched to support the silicon wafer to eliminate the negative pressure of a back cavity, so that stress-free, scratch-free and back sealing layer-dependent back growth silicon inhibition is realized. The device is simple in structure, adapts to modification of an existing epitaxial furnace, does not change original process parameters, can reduce the reject ratio of thick epitaxial back growth silicon, and is suitable for the growth process of thick epitaxy larger than or equal to 10 microns.

Increased control and efficiency over the wastewater purification can be achieved by allowing to selectively prioritize catabolic over anabolic processes via prioritization of the digestive function of microorganism in the activated sludge. The gas-dispersion return sludge is created using pure oxygen or oxygen containing trace amounts of ozone, which is blended with return sludge to create a mixture of gas and liquid, which is passed through an atomizer or a pump to instantly render the reactive gas to an ultra-fine bubble state. At least a portion of the ultra-fine bubbles dissolve within the sludge, raising oxygen to a critical level within a short time, activating the dormant microorganisms. The microorganisms accumulate enough cATP upon initial encounter with the pollutants to prioritize their digestive function, and when exposed to pollutants present in wastewater, digest the pollutants using biochemical pathways different from the ones used in nature.