249 results about "Reactive gas" patented technology

The invention provides a surface treatment method of a lithium metal pole piece. The invention relates to a surface treatment method of a lithium metal pole piece, which comprises the following steps: reacting the lithium metal pole piece in an organic solvent solution of an aromatic hydrocarbon complexing agent in an inert atmosphere, then taking out the lithium metal pole piece, and cleaning; placing the cleaned lithium metal pole piece in reactive gas for reaction to obtain a modified lithium metal pole piece; wherein the aromatic hydrocarbon complexing agent is a complexing agent which can be subjected to a complexing reaction with lithium, and the reactive gas comprises an oxidizing gas. The original inorganic layer with rough surface appearance and non-uniform component distribution of the lithium metal pole piece is changed into the flat lithium-containing inorganic layer, so that the impedance is reduced, and the service life of the battery is prolonged.

The invention discloses a magnetron sputtering coating method with uniform coating and high target material utilization rate, and belongs to the technical field of film preparation, and the method realizes high-precision coating through whole-process collaborative optimization of pretreatment, sputtering, deposition and post-treatment. The substrate is cleaned in cooperation with radio-frequency pulse focusing bombardment; an electromagnetic coil group containing a temperature compensation coil is used for target sputtering, a magnetic field is dynamically adjusted in combination with laser profile sensing and a PID self-adaptive algorithm, and a direct current pulse-radio frequency composite power supply is matched to solve the target problem; in the deposition stage, a quartz crystal instrument is used for closed-loop film thickness control, metal film pulse gas supply and compound film reaction gas phase adjustment; gradient temperature rise is carried out according to data of an X-ray stress meter in post-treatment, and argon is used for dynamic protection and impurity prevention. According to the magnetron sputtering coating method with uniform coating and high target material utilization rate, the uniformity of coating and the target material utilization rate are improved, and the technological adaptability and stability of coating are improved.

This invention discloses a corrosion-resistant aluminum-based multilayer coating on the surface of a sintered NdFeB magnet and its preparation method, comprising: pretreatment of the magnet; preparation of the aluminum coating: in the presence of an inert gas, after adjusting the pressure of the environment to a first preset value, depositing an aluminum coating on the pretreated sintered NdFeB magnet; preparation of the aluminum-based barrier coating: in the presence of a reactive gas, after adjusting the pressure of the environment to a second preset value, exciting the reactive gas into a high-density plasma, generating an aluminum-based barrier layer on the surface of the sintered NdFeB magnet with the deposited aluminum coating; repeating steps S200 and S300, followed by cooling, to complete the preparation of the corrosion-resistant aluminum-based multilayer coating on the surface of the sintered NdFeB magnet. This invention does not involve reactive sputtering, effectively avoiding the "palladium poisoning" phenomenon during the deposition process, and the prepared multilayer coating has excellent corrosion resistance.

To deposit nanolaminates on a substrate, the substrate is mounted in a vacuum recipient on a substrate support in a peripheral region of a holder. The recipient comprises a sputter station with a sputtering target and a plasma treatment station with a plasma source, wherein the sputtering target and the plasma source are directed to different sections of the holder. A sputtering gas is introduced into the recipient, a reactive gas is introduced into the sputter station and the plasma treatment station, a magnetron discharge is ignited in the sputter station, and a plasma is ignited in the plasma treatment station. By rotation of the holder, the substrate is successively exposed to the magnetron discharge to deposit a well layer of high refractive index material having a layer thickness between 0.1 nm and 6 nm and to the plasma to produce a layer of low refractive index material.

Thermogravimetric Reactor (TGR) and process to study weight change behavior of carbonaceous solids / catalysts during thermo-chemical reactions in gaseous environment up to the maximum operating temperature of 1000° C. and at atmospheric pressure are disclosed. The device includes a vertical tube reactor, digital weighing balance, gas feeding system equipped with volumetric flow controllers, rotameters, isolation valves and non-return valves to introduce inert and reactive gases and their mixtures to the reactor. It also has a movable electrical furnace heater for sudden heating / cooling of sample as per requirement. It also has sample feeding / loading system comprising containers of different sizes and shapes with a hanging arrangement There is arrangement to test the product gas composition with on line gas analyzer in the exit line or collecting the outgoing gas from the sampling port for off line gas analysis. The system also has control panel to store and display data including process parameters.

The invention relates to a method for depositing a two-dimensional layer on at least one substrate of a CVD reactor, in which a process gas is fed by means of a feed line into a gas distribution chamber of a gas inlet device having a first gas distribution chamber and at least one second gas distribution chamber, and in which the substrate is brought to a process temperature by means of a heating device. In a first step, an inert gas or a diluent gas is fed into a first gas distribution chamber, and a reactive gas is fed into a second gas distribution chamber, the reactive gas is pyrolytically decomposed in a processing chamber, the decomposition product forms a two-dimensional first layer, in a second step, a second layer is deposited above and / or next to the first layer, an inert gas or a diluent gas is fed into the second gas distribution chamber and a reactive gas containing elements of the two-dimensional second layer is fed into the first gas distribution chamber, the reactive gas or gas mixture being decomposed in the process chamber, the decomposition product forming the two-dimensional second layer.

The invention provides a method for improving the film thickness stability of semiconductor process equipment. The method comprises the following steps: judging whether the accumulated film thickness of a spray header reaches a preset threshold value or not, and if so, executing cleaning; the step of plasma heating is executed after cleaning is finished, the temperature of a spray header is increased through the bombardment effect of non-reactive gas plasma, and the problem that the film thickness jumps in the initial stage of cleaning is solved; when the deposition process is executed, the film thickness compensation step is executed according to the current accumulated film thickness data, the deposition time is adjusted by establishing a deposition rate attenuation model, and the problem that the film thickness is reduced under the high accumulated film thickness is solved. According to the invention, the defect of no active temperature control machine can be made up, and the film thickness fluctuation between wafers is controlled within 1%.

A fuel burner tube (1) for a combustion chamber burner comprises a tubular body (2) extending along a longitudinal axis with external (21) and internal (22) surfaces. The tubular body (2) has a premixing area (25) within the internal surface (22) where oxidant gas is premixed with fuel. One or more radially arranged through holes (3) on the internal surface (22) inject a lateral purging flow downstream toward the premixing area (25). A centerbody (4) within the tubular body (2) extends from a first end (23) to the premixing area (25), allowing the introduction of a central purging flow. At least one fuel injection channel (5), connectable to a fuel injection system, is positioned downstream of the centerbody (4) on the internal surface (22) in correspondence with the premixing area (25) to inject fuel into the premixing area (25).

A cell includes an element portion and a support substrate. The support substrate includes a gas-flow passage through which the reactive gas flows in a first direction, and supports the element portion. The element portion includes a first portion having a first length in a second direction intersecting the first direction, and a second portion located on a downstream side in the gas-flow passage relative to the first portion, the second portion having a second length in the second direction different from the first length in the second direction.

This invention belongs to the field of hydrogen production technology, specifically relating to a method and application of hydrogen production via an oxygen-permeable membrane. The method includes the following steps: (1) introducing water vapor into a second oxygen-permeable membrane reactor R2 to generate a high-temperature reactive gas 1; (2) mixing the remaining hydrogen-containing gas on the water vapor side of the second oxygen-permeable membrane reactor R2 with the high-temperature reactive gas 1 and introducing it into a first oxygen-permeable membrane reactor R1; (3) introducing water vapor into the first oxygen-permeable membrane reactor R1, where oxygen migrates through the oxygen-permeable membrane to the oxygen side and reacts with the mixed gas 1 to generate a high-temperature reactive gas 2; (4) introducing a portion of the high-temperature reactive gas 2 as a circulating gas into the second oxygen-permeable membrane reactor R2 and mixing it with fuel; (5) introducing the remaining hydrogen-rich gas on the water vapor side of the first oxygen-permeable membrane reactor R1 into a first condenser C1 to obtain high-purity hydrogen. This invention further reduces energy consumption while increasing the production rate, providing a convenient, efficient, and economical way to produce hydrogen.

The application discloses a kind of waste lithium battery black powder low-temperature efficient defluorination method, belong to battery material recycling technical field.The method is to place waste lithium battery black powder in flowing non-reactive gas, heated to 300~600 DEG C temperature and carried out defluorination treatment.This method uses flowing atmosphere in the sintering process and accurately controls temperature, uses airflow to carry out fluorides generated by pyrolysis to promote the rapid, deep decomposition of fluorides in black powder, while the crystal structure of waste lithium battery black powder is not damaged, solves the technical bottleneck of incomplete defluorination of waste lithium battery black powder, serious secondary reaction and high energy consumption in prior art, promotes the large-scale green regeneration of waste lithium battery positive material.

A method includes positioning a substrate within a processing chamber that comprises a feature formed within a dielectric layer formed over an underlayer, delivering an RF power to the processing chamber to generate a plasma over the substrate including: delivering a processing gas during a first time period, delivering a reactive gas into a flow of the processing gas during a second time period to form a pretreatment gas, delivering a deposition gas during a third time period, the deposition gas comprising a precursor gas and the pretreatment gas; and delivering a post-treatment gas during a fourth time period comprising halting the delivering of the precursor gas during the fourth time period, halting the delivering of the RF power and delivering the precursor gas into a flow of the post-treatment gas during a fifth time period, and purging the processing chamber during a sixth time period.

This application provides a wafer cleaning device and its control method. The support structure includes an upper support structure and a lower support structure. A rotating plate has multiple wafer holes. The rotating plate, the upper support structure, and the lower support structure constitute a processing chamber. The lower support structure has a vacuum pipeline and a purge pipeline. The purge pipeline includes a main pipe and multiple branch pipes connected to the main pipe. The main pipe includes an outer ring pipe and an inner guide pipe. The inner guide pipe has an air inlet channel. The extension direction of the air inlet channel makes an angle of 30°~60° with the axial direction of the inner guide pipe. A heating component is located between the outer ring pipe and the inner guide pipe to heat the purge gas to 200°C~300°C. The purge pipeline introduces purge gas into the processing chamber at a total flow rate of 155~165 L / min for a duration of not less than 10 min. The upper support structure has a gas supply component and an exhaust component. The gas supply component introduces reactive gas into the processing chamber. The exhaust component discharges the purge gas and the stripped particles at an exhaust pressure of not less than 500 Pa during the purge process. This improves wafer cleanliness.

To stably form an insulating film of high quality in a reactive ion plating apparatus and method.SOLUTION: In the reactive ion plating apparatus 10, an evaporation material 24 stored in a crucible 20 is heated and evaporated by an electron gun 22. In addition, the ionization power Wd is supplied to the crucible 20 as an anode and the hot cathode filament 34 that emits thermoelectrons as a cathode. Accordingly, the plasma 100 is induced. Further, the reactive gas is introduced into the vacuum chamber 12 through the hollow anode 46, and the hollow anode power Wh is supplied to the hollow anode 46. Accordingly, the hollow anode plasma 200 is induced. A hollow anode filament 48 is provided at a gas discharge port of the hollow anode 46. The hollow anode filament 48 becomes a stable anode by being heated by Joule heat.SELECTED DRAWING: Figure 1

According to an embodiment, a method for manufacturing a packaging substrate comprises: a preparation step to comprise a base substrate including a core layer, a first conductive layer disposed on the core layer, and an insulating layer disposed on the first conductive layer; and a desmear step to comprise desmearing the base substrate, thereby providing a packaging substrate. The insulating layer comprises a contact hole penetrating the insulating layer in a thickness direction. An upper surface of the first conductive layer comprises an exposed region exposed by the contact hole. In the desmear step, the base substrate is plasma-desmeared using a reactive gas comprising oxygen gas and a fluorine-based gas. In the desmear step, a ratio of a flow rate of the fluorine-based gas to a flow rate of the oxygen gas introduced into an atmosphere in which the base substrate is placed is 4.5 or more.

This invention discloses a control method, control system, and control device for reactive sputtering processes. The control method includes: during a preset initial time period after the reactive sputtering process starts, acquiring real-time target voltage data, calculating the standard deviation of the target voltage, and setting a dynamic gradient threshold based on the standard deviation; after the preset initial time period, acquiring the current target voltage in real-time at a preset sampling period and calculating the real-time rate of change of the target voltage; comparing the absolute value of the real-time rate of change with the dynamic gradient threshold; when the absolute value of the real-time rate of change is greater than the dynamic gradient threshold, it is determined to be a precursor to target poisoning, and a negative gas flow pulse signal is output to the gas mass flow controller to reduce the flow rate of the reactive gas. This invention can respond proactively, avoid target poisoning, reduce false triggering rate, and improve adaptability.

The invention relates to an ion beam etching device suitable for a large-size wafer and a vacuum etching machine. Comprising a vacuum cavity, an ion source arranged on the vacuum cavity, a sample carrying table and a gas injection device arranged in the vacuum cavity, wherein the ion source is used for outputting an ion beam, and the sample carrying table is used for carrying a large-size wafer; the gas injection device is arranged in a partitioned manner corresponding to the bearing area of the sample carrying table; the gas injection devices are respectively connected to a gas source through a gas mass flow valve; the gas source comprises inert gas and / or reactive gas; the gas mass flow valve is connected to a mass flow controller; the mass flow controller is used for carrying out independent flow regulation on the inert gas and / or reactive gas jetted in the gas jetting device of each partition according to flow control parameters, and dynamically regulating the atmosphere concentration on the surface of the large-size wafer so as to finely adjust the reaction rate; according to the technical scheme, the rate difference of different areas of the wafer can be compensated, and the etching uniformity of the large-size wafer is improved.

The utility model provides vapor deposition equipment. The vapor deposition equipment comprises a gas inlet device arranged at the top of a cavity, one end of the flow guide device surrounds the gas outlet side of the gas inlet device to define a channel for gas to pass through; the side heating device is located between the flow guiding device and the outer wall of the cavity and arranged outside the flow guiding device in a surrounding mode. The top support is located above the side heating device, one end is assembled on the side of the flow guiding device, and the other end extends towards the side wall of the cavity. The first heat insulation device is arranged in a structure defined by the top of the flow guide device, the top support and the top of the cavity. According to the vapor deposition equipment provided by the utility model, the first heat insulation device is arranged in the structure defined by the top of the flow guide device, the top bracket and the top of the cavity, so that the top bracket can support the first heat insulation device, and heat transfer from the side heating device below the top bracket to the top of the cavity is reduced or blocked through the first heat insulation device; therefore, the pre-reaction of the reaction gas near the spraying gas outlet side is reduced or avoided.

The invention discloses an atmosphere sampling device for hydroxyl radical reaction activity measurement, and relates to the technical field of atmosphere hydroxyl radical reaction activity measurement, the atmosphere sampling device comprises an OH precursor gas path, an atmosphere sample gas path and a test gas path; the OH precursor gas circuit is used for introducing zero air and comprises a zero air sample introduction pipeline, a first flow meter, an ultraviolet lamp, a water bath bottle and a second flow meter which are sequentially connected along the gas transmission direction; the atmosphere sample gas path is used for introducing an atmosphere sample or zero air and comprises an atmosphere sample introduction pipeline, a filter, a third flowmeter, a first three-way joint and a second three-way joint which are sequentially connected along the gas transmission direction; the inspection gas circuit is used for introducing standard reactive gas and comprises a standard gas sample introduction pipeline and a fourth flow meter which are sequentially connected along the gas transmission direction; the second flowmeter is connected to a bypass of the first three-way joint; the fourth flowmeter is connected to a bypass of the second three-way connector; and a sample outlet of the second three-way joint is connected to the laser flash photolysis-magnetic rotation spectrometer. The invention provides a sample introduction device for atmospheric kOH'measurement based on a laser flash photolysis method, integrates sample introduction, OH precursor generation and an inspection gas path, and is convenient for switching of a system in different modes.

The present invention relates to a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a recording medium. The present invention aims to control the in-plane film thickness distribution of a film formed on a substrate. The semiconductor device manufacturing method of the present invention includes a step of preparing a substrate; and a step of supplying a non-reactive gas to the substrate from a first supply portion, supplying a non-reactive gas to the substrate from a second supply portion, and supplying a processing gas to the substrate from a third supply portion, the third supply portion being disposed on the opposite side of the first supply portion across a straight line passing through the center of the second supply portion and the substrate, and in the step of forming a film, the in-plane film thickness distribution of the film formed on the substrate is adjusted by controlling the balance between the flow rate of the non-reactive gas supplied from the first supply portion and the flow rate of the non-reactive gas supplied from the second supply portion.

This invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a processing unit, a storage unit, a processing circuit, a circulation circuit, and a gas supply circuit. The processing unit etches a polycrystalline silicon film or an amorphous silicon film formed on the substrate using an alkaline solution. The storage unit recovers and stores the solution used in the processing unit. The processing circuit supplies the solution stored in the storage unit to the processing unit. The circulation circuit removes the solution from the storage unit and returns the removed solution to the storage unit. The gas supply circuit is connected to the circulation circuit and supplies a non-reactive gas to the circulation circuit. The circulation circuit includes an outlet that discharges a mixture of the non-reactive gas supplied by the first gas supply circuit and the solution removed from the storage unit into the interior of the solution stored in the storage unit. Therefore, when the alkaline solution is recovered for reuse, the dissolved oxygen concentration of the solution can be efficiently reduced.

This invention provides a slow-release preparation method for a high-loading single-atom catalyst. Compared with existing technologies, this invention utilizes the ion exchange and interlayer confinement effects of montmorillonite to pre-confine the metal precursor within the montmorillonite interlayer, isolating it from the carbon and nitrogen precursors. Then, the reactive gas generated during pyrolysis slowly releases the metal precursor from the interlayer in situ, anchoring it onto the outer carbon and nitrogen support. This slow-release synthesis strategy enables targeted synthesis at single-atom sites, offering advantages such as high metal precursor utilization, pure single-atom sites, and high metal loading. Furthermore, the slow-release anchoring of the metal precursor effectively avoids nanoparticle formation, eliminating the need for subsequent acid washing and significantly reducing secondary pollution and high costs. In addition, the slow-release synthesized single-atom catalyst, when used to catalyze the activation of hydrogen peroxide to remove pollutants from water, exhibits advantages such as strong oxidative degradation ability, high pollutant removal efficiency, good catalytic stability, and a wide pH range.

This invention belongs to the field of photon counting detector manufacturing technology, specifically relating to a plasma treatment method for the crystal surface of a photon counting detector and the resulting photon counting detector. The treatment method employs a step-by-step plasma surface modification process. First, the crystal wafer surface is bombarded with plasma generated by the ionization of an inert gas. Then, a secondary bombardment is performed using plasma generated by the ionization of reactive gases such as oxygen and hydrogen. Simultaneously, key process conditions such as process gas flow rate, wafer orientation bias, processing time, cavity vacuum, radio frequency power, plasma parameters, and wafer spacing are systematically controlled. This step-by-step modification process achieves nanoscale modification of the crystal surface, effectively repairing surface damage caused by processing and forming a uniformly distributed surface modification layer. Photon counting detectors fabricated using this method can significantly reduce device leakage current, improve withstand voltage performance, optimize energy resolution, and improve photon counting rate and counting stability.

A method for depositing crystalline semiconductors onto a substrate is provided. In this method, an electrical voltage is applied between a metallic sputtering target and the anode of a magnetron sputtering unit to ignite a magnetron discharge. This discharge causes a particle flux from the sputtering target to the substrate and excites the reactive gas to an initial quantity of activated reactive gas plasma, resulting in the epitaxial growth of a crystalline semiconductor on the substrate.In this process, during the deposition of a semiconductor on the substrate, an additional power input is implemented into the reactive gas plasma, which excites the reactive gas to a second quantity of activated reactive gas plasma that is higher than the first quantity of activated reactive gas plasma, but which keeps the particle flux from the sputter target to the substrate the same or increases only disproportionately less than the increase in the first quantity of activated reactive gas plasma compared to the second quantity of activated reactive gas plasma.

This invention discloses a spouted bed reactor and method for selective carbon deposition on the outer surface of micron-sized powders, belonging to the fields of gas-solid reaction engineering and chemical vapor deposition technology. The reactor includes a sealed reaction chamber, within which a gas distribution zone, a spouted circulation zone, a main reaction zone, and a top buffer zone are sequentially arranged. A porous distribution plate and a carrier gas inlet are provided at the bottom, and a central spouted gas inlet can be provided to form a particle circulation path with a central upward flow and peripheral recirculation. A reactive gas introduction structure is provided in the main reaction zone to introduce reactive gas in the middle of the particle circulation path. An internal filter assembly can be installed at the top of the chamber to achieve gas-solid separation. Through the partitioned introduction of carrier gas at the bottom and reactive gas in the middle, a spatially separated gas-solid contact structure is formed within the reaction chamber.

The method for isolating a lithium precursor according to the embodiment of the present application includes the steps of preparing a primary precursor mixture including a primary lithium precursor and a primary transition metal precursor, mixing the primary precursor mixture with a precipitation solution in a reactor to form a precursor mixture, and injecting a non-reactive gas into the precursor mixture. Accordingly, the lithium precursor can be isolated with high purity and high efficiency.

In a film formation apparatus and a film formation method using magnetron sputtering, high reproducibility is achieved even when a reactive film is formed by simultaneously introducing a plurality of types of reactive gases into a vacuum chamber. [Solution] In a magnetron sputtering apparatus (10) according to the present invention, the flow rate Qd of an inert gas introduced into a vacuum chamber (12) is kept constant, and the angle θ of a conductance valve (22) is kept constant, i.e., the effective pumping speed at an exhaust port (14) of the vacuum chamber (12) is kept constant. Additionally, the sputtering power Es, the arc discharge power Ed, and the substrate bias voltage Vb are kept constant. Furthermore, a gas flow rate ratio Rq, which is the ratio between the flow rates Qr1 and Qr2 of the reactive gases introduced into the vacuum chamber (12), is kept constant, and a total gas flow rate Qa, which is the sum of the flow rates Qr1 and Qr2 of the reactive gases, is controlled so that the pressure P inside the vacuum chamber (12) is kept constant.

The method for producing lithium sulfide of the present application includes a mixing step of preparing mixed powder containing solid lithium hydroxide, solid sulfur, and a reducing agent containing carbon element; and a calcining step of calcining the mixed powder at a temperature of 600°C or higher and 1200°C or lower in a non-reactive gas or reducing gas atmosphere. In the calcining step, a gas accumulation inhibiting treatment is performed which inhibits accumulation of gas generated in the calcining step into the mixed powder. The gas accumulation inhibiting treatment is preferably performed at a temperature of 120°C or higher and 1200°C or lower.

This disclosure provides plasma processing equipment and methods, control devices, and storage media. The equipment includes: a cavity, a support device, a filter device, a gas inlet device, and a plasma excitation device. The filter device includes a first ion filter unit and a second ion filter unit. The gas inlet device includes an auxiliary gas input component connected to the plasma generation region and a reactive gas input component connected to the plasma indirect excitation region. The plasma excitation device excites the auxiliary gas entering the plasma generation region to form plasma. The first ion filter unit filters out ions and electrons from the plasma. The remaining excited-state atoms of the auxiliary gas are used to excite the reactive gas in the plasma indirect excitation region to form excited-state atoms of the reactive gas. The second ion filter unit filters the excited-state atoms of the reactive gas and allows them to enter the reaction region, thereby reducing the energy and density of high-energy particles and minimizing damage to the wafer substrate.

The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.