19 results about "Plasma etcher" patented technology

The invention discloses a manufacturing process of a high-precision fine pattern etching badge, and relates to the technical field of etching, and the manufacturing process comprises the following steps: S1, after the surface of the badge is cleaned up, putting the badge into a plasma etching machine body, adsorbing and fixing the badge by using a vacuum chuck, then closing and sealing the plasma etching machine body, and then sealing the plasma etching machine body; s2, driving an inner cross rotating cylinder, a cross anti-deviation sliding rod, a rotary supporting tray and the badge to rotate through a rotary driving motor during etching, the plasma etching machine is scientific and reasonable in structure and safe and convenient to use, a turn-over and vertical adjusting mechanism is arranged, the badge is conveniently clamped through two turn-over type clamping frames, and the working efficiency is improved; and then through cooperation of an overturning driving shaft, an overturning swing plate, an overturning traction plate, a hydraulic pushing pull rod and a positioning moving sliding block, a rotary mounting frame and a rotary splicing base plate are conveniently driven to rotate, an overturning type clamping frame is pushed to rotate by 90 degrees, and the clamped badge is overturned according to needs.

A soft nanoimprint-based TMDC material patterning method. Adjusting a SF6 gas etching time on the basis of the thickness of a TMDC two-dimensional material can freely adjust a nano pattern depth to adapt to different optical performance requirements. The present invention specifically optimizes an RIE electron beam lithography process to prepare large-area samples, can implement full-area patterning of TMDC two-dimensional materials, greatly optimizes a technological process, improves scientific research production efficiency, and reduces process costs. During integration with a photoelectric device, when a silicon oxide wafer is used as a substrate, O2 is first introduced 5s into an RIE plasma etcher to treat the surface of the silicon oxide wafer so as to increase its hydrophilicity, thereby allowing for more uniform spin-coating of SU8. The method is universal to TMDC of different thicknesses and types.

To provide a packing body of a mirror-like finishing body which can suppress the occurrence of a minute foreign matter on a mirror-like finishing surface of the mirror-like finishing body, and a packing method for the packing body of the mirror-like finishing body.SOLUTION: A packing body in which a plasma etcher electrode plate having a mirror-like finishing surface is sealed in a bag body made of a resin film under vacuum, the resin film constituting the bag body is in contact with the plasma etcher electrode plate, the resin film is made of additive-free polyethylene containing no additive, and the crystallinity of the resin film is 44% or more and 51% or less.SELECTED DRAWING: Figure 1

The present invention discloses a plasma etcher with uniform etching, which relates to the field of semiconductor chip manufacturing technology, and includes a core component, wherein the core component includes a turbine arranged in the middle, wherein blades with wing-shaped structures are fixed in a circumferential array on the turbine, and a main shaft is coaxially fixed to the middle of the bottom end of the turbine, and a cross is fixedly installed on the top of the turbine, and anti-slip protrusions are fixedly installed on the ends of the cross. Based on the principle of the Bernoulli suction cup, this application integrates a turbine at the air outlet of the suction cup, not only utilizing the uniform airflow layer formed after the high-speed jet is ejected from the circumferentially distributed air outlet gap between the conical surface at the exhaust end opening and the turbine to generate negative pressure, so that the wafer body is firmly adsorbed on the cross, but also utilizing the high-speed jet to impact the wing-shaped blades on the turbine to generate lift, and then driving the wafer body to rotate at a uniform speed through the cross, and improving the etching uniformity through the uniform rotation of the wafer body, and the linkage between the various structures of the device is strong.

The utility model relates to a temperature control system of a plasma etching machine, which comprises a vacuum chamber, an electrode assembly is arranged in the vacuum chamber, the electrode assembly comprises a plurality of electrode plates, the vacuum chamber is also provided with a plurality of electromagnetic valves electrically connected with a central controller, and the electromagnetic valves control the flow velocity of cooling water in the electrode plates in a one-to-one correspondence manner; a temperature sensor electrically connected with the central controller is arranged on each electrode plate; during use, the temperature sensor can correspondingly monitor the temperature of each electrode plate and send signals back to the central controller, and after the central controller analyzes the signals, the flow rate of cooling water in each electrode plate is controlled through the electromagnetic valve of each electrode plate, so that the temperature of each electrode plate is accurately controlled, and it is ensured that the temperature of each electrode plate in the reaction process is reduced. Therefore, the etching requirement of a product with a high etching uniformity requirement is met.

The present application provides a control circuit and an etching vacuum system, wherein the control circuit includes: a power supply module, an interlock control module, and a switch module; the interlock control module includes: a power supply control unit and a connection control unit; the output end of the connection control unit is respectively connected to the entrance carrier lock and the exit carrier lock of the plasma etcher; the power supply control unit is used to power on when the switch module is turned on and send an electromagnetic signal to the connection control unit; the connection control unit is used to form a loop between the output end of the connection control unit and the entrance carrier lock and the vacuum extraction device of the plasma etcher under the action of the electromagnetic signal, so as to connect the entrance carrier lock with the vacuum extraction device of the plasma etcher and disconnect the exit carrier lock from the vacuum extraction device of the plasma etcher. The present application can control the vacuum extraction process of the plasma etcher, thereby effectively avoiding the occurrence of atmospheric re-injection.

Provided are a plasma etcher with an edge ring. The edge ring includes a circular lower portion having a lower opening sized to receive an electrostatic chuck supporting a semiconductor device; and a circular upper portion disposed on the circular lower portion, wherein the circular upper portion and the circular lower portion have different materials. The circular lower portion of the edge ring provides electrical and plasma uniformity for the semiconductor device, while the semiconductor device is being processed by the plasma etcher. At mean time, the circular upper portion of the edge ring is configurated to prevent damage of the circular lower portion by the plasma gas.

The utility model discloses a plasma etching machine convenient to adjust, and relates to the technical field of plasma etching machines, the plasma etching machine comprises an etching machine body, a moving mechanism is installed in the etching machine body, in the plasma etching machine, a second electric push rod works to drive a first moving block to move and a rotating plate to rotate, and the inclination angle of a fixed seat is driven to change; a driving motor works to drive a rotating sleeve to rotate, a connecting rod and a moving frame rotate along with the rotating sleeve, the positions of a rotating plate and a second moving block are driven to be changed, the inclination angles of different positions of a workpiece are adjusted, and the etching requirements of various different angles are met; a third electric push rod works to push a moving rod to move, a rotating disc and a rotating rod are driven to rotate, the protruding position of the rotating disc makes contact with a protruding block, two clamping blocks are pushed to the middle, the end of a workpiece is clamped and fixed, the workpiece is prevented from deviating in the etching process in the etching machine body, and the etching effect is improved.

The present invention discloses a novel annular adjustable radio frequency coil device, which belongs to the technical field of plasma etcher equipment. The present invention includes a plasma etcher, wherein a chamber is provided inside the plasma etcher, a coil adjustment mechanism is provided inside the chamber, and a radio frequency power supply is installed on one side of the plasma etcher. The coil adjustment mechanism includes a coil body, a protrusion is fixedly installed on the outer periphery of one side of the coil body, a first conductive connection spring is fixedly installed on one end of the protrusion, and a radio frequency coil fixing point is also fixedly installed on the outer periphery of the coil body. The coil body can be provided in multiple groups. The present invention shows a four-group setting. Multiple coil bodies are combined into an annular structure. Gaps are opened between adjacent coil bodies, and coil compensation areas are added outside the incompletely closed areas to compensate for the phenomenon that no electromagnetic field can be formed or a weak electromagnetic field is formed at the gaps.

Disclosed in the present invention are a top gas inlet gas-uniformization structure and a plasma etcher. The top gas inlet gas-uniformization structure comprises a center gas inlet assembly and an edge gas inlet assembly, wherein multiple center gas injection channels are formed in the center gas inlet assembly, multiple edge gas injection channels are formed in the edge gas inlet assembly, and the multiple edge gas injection channels are arranged around the center gas injection channels. Compared with the prior art, by enhancing the uniformity of gas injected into a plasma reaction chamber, the uniformity of an etching rate of a plasma etcher is improved.

The invention discloses a uniform-etching plasma etching machine, and relates to the technical field of semiconductor chip manufacturing, the uniform-etching plasma etching machine comprises a core assembly, the core assembly comprises a turbine arranged in the middle, blades of wing-shaped structures are fixed to the turbine in a circumferential array mode, and a main shaft is coaxially fixed to the middle of the bottom end of the turbine; a cross is fixedly mounted at the top end of the turbine, and anti-skid protrusions are fixedly mounted at the ends of the periphery of the cross. On the basis of the principle of a Bernoulli suction cup, the turbine is integrated at the air outlet of the suction cup, so that negative pressure is generated by a uniform airflow layer formed after high-speed jet flow is sprayed out from the air outlet gap circumferentially distributed between the conical surface at the opening of the exhaust end and the turbine, and a wafer body is firmly adsorbed on the cross; and the high-speed jet flow impacts the wing-shaped blades on the turbine to generate lift force, the wafer body is driven to rotate at a constant speed through the cross, the etching uniformity is improved through the constant-speed rotation of the wafer body, and the linkage of all structures between the devices is high.

A gas injection structure and a plasma etcher. The gas injection structure comprises: a gas intake pipe sleeve (100) capable of being in communication with a gas source; a gas injection member (200) detachably connected to the gas intake pipe sleeve (100), an accommodating space being formed after the gas injection member (200) is connected to the gas intake pipe sleeve (100); and a gas path switching member (300) movably arranged in the accommodating space. The gas path switching member (300) is provided with a gas through-hole group (3021, 3022, 3023), and the gas injection member (200) is provided with a gas injection hole group (201, 202, 203); a plurality of gas through-hole groups (3021, 3022, 3023) and a plurality of gas injection hole groups (201, 202, 203) are provided, and each of the gas injection hole groups (201, 202, 203) corresponds to one of the gas through-hole groups (3021, 3022, 3023); and the gas injection hole groups (201, 202, 203) have different injection directions. On the basis of the movable arrangement of the gas path switching member (300), the communication between one of the gas injection hole groups (201, 202, 203) and the gas through-hole group (3021, 3022, 3023) corresponding thereto can be switched to the communication between another gas injection hole group (201, 202, 203) and another gas through-hole group (3021, 3022, 3023). The gas injection structure can achieve gas injection in multiple directions, and with the continuous movement of the gas path switching member (300), the gas injection structure can also achieve periodic gas injection in multiple directions, enhancing the uniformity of plasma concentration, and thus improving the uniformity of plasma etching.

The present invention relates to the field of plasma etching machines, and discloses a wafer offset correction device and method for a plasma etching machine, wherein the device comprises: an offset detection mechanism, which is placed inside the plasma etching machine, and is used to detect the offset angles of the wafer relative to the target position in the X-axis, Y-axis and / or Z-axis directions when the plasma etching machine etches the wafer; and an offset correction mechanism, which is connected to a fixing mechanism carrying the wafer, and is used to adjust the fixing mechanism when any of the offset angles of the wafer in the X-axis, Y-axis and / or Z-axis directions is greater than a preset angle threshold, so that the wafer is in the target position. The present invention can correct the offset wafer and avoid incomplete etching of the wafer.

The application discloses a kind of plasma etching device and etching process for PCB board, including plasma etching machine body and feeding frame, the center of four around inner wall of feeding frame is welded with support column, and the shaft center of feeding frame is provided with the fixed connection of support column and placing disc, the inside of placing disc is rotatably connected with the bearing of carousel, and the top of carousel is equipped with the vortex groove of equidistance annular structure distribution.This application first motor drives driving gear to mesh with gear ring to rotate, gear ring drives carousel to rotate in the inside of placing disc by connecting block, the process of carousel rotation Column rod can be concentrated or away along vortex groove, so that column rod can drive sliding block to slide along sliding groove, and sliding block drives clamping block to clamp and position PCB board, so as to improve the stability in the process of PCB board etching, solve the complexity of conventional fixture in prior art for PCB board fixing or dismounting operation process.

The present invention belongs to the field of sensing technology, and specifically relates to an ozone sensor based on an etched indium tin oxide film, as well as its preparation method and application. The preparation method comprises: using a laser to etch the ITO layer on the surface of ITO glass to obtain a patterned ITO film resistor device (resistance of 0.1-5 kΩ); placing the ITO film resistor device in a plasma etcher and performing Ar & H2 plasma etching to obtain an ITO film resistor device with a rough surface and rich surface defects; and annealing and aging treatment in air followed by cooling to produce an ozone sensor based on the etched indium tin oxide film. In self-heating mode, the sensor can highly sensitively detect trace amounts of O3 in the environment, exhibiting low power consumption, high selectivity, resistance to humidity interference, and long-term stability, meeting the requirements for O3 detection in indoor and outdoor environments. This method solves the problems of existing O3 sensors, such as the opaque sensing substrate and complex preparation process (requiring an integrated heater), and has broad application prospects.

The invention relates to the technical field of Low-E film production, and provides Low-E film plasma etching equipment which comprises a rack, a plasma etching machine, a visual detection module, a winding roller, an unwinding roller, a data transmission line set, an electrical performance testing module, a tensioning mechanism and a fixed roller. The electrical performance testing module comprises an automatic switching module, a four-probe measuring roller and a deviation rectifying ring; a driving part in the automatic switching module is in transmission connection with the external threaded pipe, the three sets of four-probe measuring rollers are symmetrically connected between the two sets of annular shells, the data transmission probe is fixedly embedded into the external threaded pipe, and current probes and voltage probes in the four-probe measuring rollers are embedded into the surfaces of the roller shells. The two sets of data transmission probes can be electrically connected with the current probe and the voltage probe respectively, the outer threaded pipe is used for controlling the deviation rectifying ring to move, the deviation rectifying ring is arranged between the roller shell and the fixed roller in a sliding mode, and the synchronous action of probe replacement and deviation rectifying adjustment is achieved. It is ensured that films of different widths can be stably guided to the accurate measurement area of the measurement roller.

The utility model relates to an electrode structure of a plasma etching machine, which comprises a vacuum chamber, an electrode assembly and baffle plates are arranged in the vacuum chamber, the electrode assembly comprises a plurality of vertical electrode plates arranged at equal intervals, the baffle plates are arranged on the left side and the right side of the electrode assembly, and the baffle plates are parallel to the electrode plates. The distance from the baffle plate to the nearest electrode plate is equal to half of the distance between two adjacent electrode plates; therefore, the distance from the first circuit board to the first electrode plate is equal to the distance from the baffle to the first electrode plate, the distance from the penultimate circuit board to the penultimate electrode plate is equal to the distance from the baffle to the penultimate electrode plate, and reaction gas between the baffle and the side wall of the vacuum chamber cannot be obtained immediately. And a reaction gas environment which is the same as that of other circuit boards in the middle position is created for the first circuit board / the last but one circuit board, so that the etching rates of the first circuit board / the last but one circuit board are kept consistent, and the etching uniformity of the plasma etching machine is improved.

The application discloses a GaN-based material atomic layer etching method, which comprises the following steps: step 1, conveying a modified material needing modification into a vacuum cavity of a plasma etching machine for vacuumizing; step 2, conveying the vacuumized modified material into a modification process chamber; step 3, modifying the modified material by using a modification gas; the modification gas is any one or any combination of Cl2, BCl3 and a chlorine-based gas; step 4, removing the modification gas and filling an etching gas for plasma bombardment; the etching gas is an inert gas or a combination of multiple inert gases; and step 5, removing the etching gas and repeating steps 3 and 4 until the GaN-based material reaches the process index requirement. The application optimizes the process of the GaN-based material and obtains more accurate control and low damage.

To provide a mirror-finished body package and a packaging method of mirror-finished body package that can suppress microscopic foreign matters from being deposited on the mirror-finished surface of a mirror-finished body.SOLUTION: A mirror-finished body package of the present invention is a package in which a mirror-finished body having a mirror-finished surface is sealed in a bag made of resin film in vacuum state, the mirror-finished surface is in contact with the resin film that constitutes the bag, the degree of crystallinity of the resin film is 40% or more and 60% or less, preferably 44% or more and 54% or less.SELECTED DRAWING: Figure 1