47 results about "Plasma etcher" patented technology

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.

A method of operating a plasma etcher wherein gas is introduced into the etcher at a substantially higher rate than a previous standard rate for a desired etch selectivity, and the throttle valve's open value is set to a substantially greater open value than a previous standard open value for the desired etch selectivity. The method may also include introducing the gas at a lower pressure than the pressure of the previous standard pressure for a desired etch selectivity.

Methods and apparatus for etching substrates such as silicon wafers are provided. In one specific approach, a surface of the substrate assembly is covered with a resist that is patterned to define features to be etched. In this approach, the surface is then exposed to a plasma in a plasma etcher so that surface areas not covered with the resist are etched, while the thickness of the resist increases or etches at a rate that is at least ten times slower than that of the exposed areas of the surface. This etching process can be followed with a conventional plasma etch. By combining the etching that increases the resist thickness with the conventional etching of resist in which the resist thins during etching, features having high-aspect-ratios can be etched.

A plasma etcher is provided, which includes: a chamber; top and bottom plasma electrodes provided top and bottom positions of the chamber; a gas injection pipe connected to the chamber; a plurality of diffusion plates provided between the top plasma electrode and the gate injection pipe; and a power generator supplying a plasma voltage to the top and bottom electrodes, wherein the top plasma electrode has a plurality of primary injection holes and the diffusion plates have a plurality of secondary injection holes.

The invention discloses a plasma etching machine, which comprises a reaction chamber body (1), a chamber cover (4) and an inner liner (2) surrounding a substrate processing position space, and the chamber cover is detachably sealed on the reaction chamber body On the other hand, the inner liner is detachably arranged in the reaction chamber body, and the side wall of the reaction chamber body is provided with a through groove (11) for the manipulator to enter and exit, and the side wall of the inner liner is provided with an open slot (21), and the open slot Corresponding to the position of the through groove, the side wall of the reaction chamber body is also provided with an operation groove (5) which is arranged at an angle to the side wall of the inner liner. The through groove is connected, and the plasma etching machine also includes a baffle (22) and a pushing mechanism. The pushing mechanism is arranged in the operating groove, and the baffle is connected with the pushing mechanism. In the closed position, the baffle blocks the opening slot, and in the open position, the baffle completely exposes the opening slot.

The invention relates to an electrode of a plasma etcher for carrying out dry etching on a hard inorganic material substrate, which comprises a guide rail device for being fixedly connected with an etching cavity. A lifter capable of taking the lifting and descending motion in the guide rail device is arranged in the guide rail device. The lifter is fixedly connected with a lower electrode tray. The lower electrode tray is arranged above the guide rail device. The lower electrode tray comprises a top disk and a bottom disk which are fixedly connected. The lower part of the top disk is provided with a cylindrical groove. A gas homogenizing disk is fixedly arranged in the cylindrical groove. Gaps are reserved between the gas homogenizing disk and the top disk as well as between the gas homogenizing disk and the bottom disk. The center of the gas homogenizing disk is provided with a frist through hole for ensuring gas to be communicated to the top disk. The first through hole is communicated with a cooling gas inlet. The center of the bottom of the bottom disk is provided with a second through hole. The second through hole is isolated from the first through hole. The bottom end of the second through hole is connected with a sealed tube. The second through hole is communicated with a cooling gas outlet. The electrode has the beneficial effect that the cooling effect is good so that the etching effect is good.