46 results about "Plasma etcher" patented technology

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.

Systems and methods that improve process control in semiconductor manufacturing are disclosed. According to an aspect of the invention, conditions in a cluster tool environment and/or a wafer therein can be monitored in-situ via, for example, a scatterometry system, to determine whether parameters associated with wafer production are within control limits. A cluster tool environment can include, for example, a lithography track, a stepper, a plasma etcher, a cleaning tool, a chemical bath, etc. If an out-of-control condition is detected, either associated with a tool in the cluster tool environment or with the wafer itself, compensatory measures can be taken to correct the out-of-control condition. The invention can further employ feedback/feed-forward loop(s) to facilitate compensatory action in order to improve process control.

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.

The invention relates to a process for homogenizing aluminum alloy, in particular to a process for homogenizing high-quality 6061 aluminum alloy for a reaction chamber liner of a plasma etcher, belonging to the technical field of non-ferrous metal heat treatment technique. The 6061 aluminum alloy comprises 0.4-0.6 wt% of Si, 0.8-1.2 wt% of Mg, 0.15-0.4 wt% of Cu, 0.01-0.35 wt% of Cr, less than 0.15 wt% of Fe, less than 0.15 wt% of Mn, less than 0.15 wt% of Ti and the balance of Al. The process provided by the invention comprises the following steps: carrying out furnace-heating on 6061 aluminum alloy cast ingots, keeping the temperature at 560+/-5 DEG C for 9 hours, discharging, and carrying out water quenching at room temperature. The homogenizing treatment can enhance the structural homogenity of the aluminum alloy matrix, redissolve the Mg2Si phase, and nodulize the iron-containing phase, thereby enhancing the effect of anodic oxidation and the corrosion resistance of aluminum alloy after anodic oxidation.

A method of plasma etching a Si3N4 masked tungsten silicide layer down to an underlying doped polysilicon layer in the gate conductor stack formation process is disclosed. The method is performed in a plasma etcher and the etching mixture contains C12, HCl and O2 wherein the C12/HCl ratio is approximately equal to 4.7 and the oxygen flow varies between 20 and 30 sccm, 25 sccm being the optimal value. A slight overetching of the underlying doped polysilicon layer with this mixture is recommended. The etching method of the present invention preserves the thickness and integrity of the top Si3N4 masking layer that are essential elements for the successful completion of the remaining steps of the gate conductor stack formation process.

The invention provides an FTIR spectrum monitoring based internal state maintenance method of a plasma etcher. The outer wall of a reaction chamber of a plasma etcher is provided with a window for installing an internal reflection crystal. An ATR-FTIR spectrum probe is installed at one end of the window, and an infrared detector is installed at the other end of the window. After light rays emitted by the Fourier transform infrared spectrum probe are reflected many times in the internal reflection crystal, the light rays are emitted from the other end of the internal reflection crystal, and are focused on the infrared detector. An HgCdTe detector is connected with a spectrum processing system so as to obtain the Fourier transform infrared spectrum graph of the inner wall of the reaction chamber of the plasma etcher regularly or at real time. The Fourier transform infrared spectrum graph is used for measuring the components of attached polymers, and is compared with a standard Fourier transform infrared spectrum graph to determine whether the reaction chamber needs cleaning. If so, the reaction chamber of the plasma etcher is cleaned.

The invention relates to a silicon wafer pressure setting and applying clamp for a plasma etcher, which comprises a clamp body, upright post screws, reset springs, pressing plates, tightening nuts and a numerical control torque wrench. The lower ends of the two upright post screws are fixed on the clamp body. The upper segments of the two upright post screws are provided with screw threads. The reset springs are sleeved on the upper segments of the upright post screws. The pressing plates are sleeved on the two upright post screws and are tightened by the tightening nuts. The tightening nuts are tightened by the numerical control torque wrench in a torque fixing mode. The whole stack of silicon wafers are arranged between the clamp body and the pressing plate and the pressing plate is tightened by the numerical control torque wrench through the two tightening nuts in a torque fixing mode, so that the pressure is set and applied to the whole stack of silicon wafers through the pressing plate. Therefore, the pressure of the whole stack of silicon wafers can be accurately controlled, nonuniform stress around the silicon wafers can be reduced, the products have consistent performance, and the etching effect is good.

The invention is an induction coupled plasma etching machine platform and its electrode construction, mainly composed of a reaction chamber, an upper electrode and a lower electrode. Wherein, the upper one is set in the reaction chamber and composed of a coil, a first dielectric layer, a second dielectric layer and a heater, the first dielectric layer on the coil, and the second dielectric layer on the first dielectric. The heater is set between the first and second dielectric layers. The lower one is set in the reaction chamber and composed of a conductor electrode and a third dielectric layer set on the conductor electrode. It uses the heater to raise the temperature in the reaction chamber to make easily volatile resultant of etching.

The invention discloses a method for reducing plasma etcher cavity pollution in a back hole process. The method comprises the steps of sputtering or evaporating a metal mask layer on the back of a SiC substrate; enabling the metal mask layer to be coated with photoresist, and drying the photoresist; performing photoetching on the photoresist to form a photoresist pattern; utilizing the formed photoresist pattern to corrode the metal mask layer, and forming a metal mask graph; performing plasma bombardment on the back of the SiC substrate of the formed metal mask graph in a plasma etcher, sputtering the photoresist on the metal mask layer to an inner wall of a cavity of the plasma etcher, and forming a photoetching layer on the inner wall of the cavity of the plasma etcher; utilizing the formed metal mask graph to etch the SiC back in the plasma etcher, and forming a back hole until the back hole is communicated with SiC front source metal. By utilizing the method, the pollution to the inner wall of the plasma etcher cavity caused by a metal mask in the back hole process is reduced, and using efficiency of the plasma etcher is improved.

The invention discloses a reaction chamber cavity based on the pneumatic configuration of a plasma etching machine. The cavityinclude a cavity, a mounting baseand a chamber door, A first mounting plate and a second mounting plate are respectively arranged at one end of both sides of the cavity, the two ends of the second mounting plate and the two ends of the first mounting plate are respectivelyrotatably connected with the two sides of one end of the cavity door through rotary joints, both chambers have viewing windows in the middle, according to the invention, the processing gas of the device is diverted once through the cloth pipe, uniformly distribute in the lower groove and the two sides of the product, the by-product of the reaction product and the non-ionized gas are diverted for the second time through the side plate of the rectangular box on the bottom surface of the cavity, and then are diverted for the third time through the diameter-changing pipe on the outside of the bottom surface of the cavity. The aerodynamic configuration can effectively ensure that the process gas is uniformly distributed in each tank and on both sides of the processed product, so that the gas flow and ions in the reaction chamber are stably exchanged, and the reaction is stable, uniform and free of plain flow.

Techniques for local and selective thinning of silicon using a combination of real time metrology for film thickness measurement accompanied by local etching of the silicon to thin the silicon to the desired value. Etching is accomplished using a miniature plasma etcher with activated etch gases. The etch tool and the metrology tool are stepped across the wafer surface to achieve wafer level thinning of the top silicon.

The invention discloses a preparation method of nanoporous structures on surfaces of silicon wafers. The method comprises the following steps: preparing cesium chloride island structures on the surfaces of the silicon wafers; plating aluminum metal films on the surfaces of the silicon wafers with the cesium chloride island structures in a vacuum manner, putting the silicon wafers into deionized water to ultrasonically peel, removing the cesium chloride island structures and the aluminum metal films on the silicon wafers to obtain porous aluminum films; deeply etching the surfaces of the silicon wafers in an etching cavity of a plasma etcher by taking the porous aluminum films as masks; and removing the porous aluminum films on the surfaces of the silicon wafers to obtain the nanoporous structures on the surfaces of the silicon wafers. The nanoporous structures on the surfaces of the silicon wafers prepared by the method are distributed on the surfaces of the silicon wafers in unordered positions; the nanoporous structures are different in sizes and similar in depth, and has Gaussian distribution of diameters and unsmooth side walls.

A reaction chamber of a dry plasma etcher comprises a cylindrical reaction chamber and an upper cover covering the cylindrical reaction chamber, wherein an air inlet hole is formed in the center of the upper cover, the cylindrical reaction chamber is formed by a side wall, a bottom wall and the upper cover, a substrate to be etched is placed in the center of the bottom wall of the reaction chamber, and a substrate picking and delivering port for picking up and delivering the substrate is formed in the reaction chamber; a uniform-flow inner lining matched with the reaction chamber is arranged in the reaction chamber and comprises a cylindrical main body, a transmission hole corresponding to the substrate picking and delivering port is formed in the main body, a circle of ring-shaped baseplate extending inwards is arranged at the bottom of the main body and corresponds to the substrate to be etched in position, and uniform-flow slotted holes are uniformly distributed in the ring-shaped baseplate; a mounting flange connected with the reaction chamber is arranged at the top of the main body and a sealing groove is formed between the mounting flange and the reaction chamber. The reaction chamber has the advantages of clean cavity, little pollution, good atmosphere and uniformity in the chamber and long service life.

The invention relates to a chip transporting system of a plasma etcher for carrying out dry etching on an inorganic material substrate, which is arranged in a forevacuum cavity and comprises a manipulator for transporting a chip dish. The manipulator is fixedly connected onto a screw nut for driving the manipulator to move. The screw nut is arranged on a screw. The screw is connected with a servo motor through a gear pair. The gear pair comprises a main gear connected with a rotor of the servo motor and a pinion connected with a rotor of the screw. The main gear is in meshed connection with the pinion. The chip transporting system has the beneficial effects of high chip transporting efficiency, high reliability and simple and reasonable structure.

Methods and apparatus for etching substrates such as silicon wafers are provided. In one specific approach, a surface of the substrate assembly is covered with a resist that is patterned to define features to be etched. In this approach, the surface is then exposed to a plasma in a plasma etcher so that surface areas not covered with the resist are etched, while the thickness of the resist increases or etches at a rate that is at least ten times slower than that of the exposed areas of the surface. This etching process can be followed with a conventional plasma etch. By combining the etching that increases the resist thickness with the conventional etching of resist in which the resist thins during etching, features having high-aspect-ratios can be etched.

A plasma etcher loading system comprises a loading cavity body and a cavity cover, a sealing ring is arranged between the loading cavity body and the cavity cover, a manipulator sheet taking and sending opening is formed in one side of the loading cavity body, a gate valve is arranged in the sheet taking and sending opening and connected with a manipulator cavity body, the loading cavity body is connected with a vacuum mechanical pump and an external air source, a tray rack of a supporting sheet tray is arranged inside the loading cavity body, the tray rack is provided with a plurality of supporting positions of the supporting sheet tray, each supporting position is provided with a notch which allows the sheet tray to leave, the tray rack is fixed on a base frame which is connected with a lifting rotating device, the lifting rotating device comprises a lifting operation portion and a rotating operation portion, the lifting operation portion comprises a guide rod, a lifting motor and a lifting transmission mechanism, the rotating operation portion comprises a rotating motor and a rotating transmission mechanism which is used for connecting the guide rod with the rotating motor, and a gap between the guide rod and the cavity body is sealed. The plasma etcher loading system has the advantages of being large in productivity of the sheet tray and capable of achieving batch machining.

The invention relates to the field of compound semi-conductor processing manufacture and discloses a technological method for removing a basic membrane of a photoresist. The technological method comprises the following steps: sending wafers to be processed into a technological cavity of an inductive coupling plasma etcher by use of a transfer arm, and retrieving the transfer arm; after the positions of the wafers are fixed, processing the wafers to be processed in the technological cavity by Ar plasma, controlling the power of the inductive coupling plasma etcher to be first preset power and bias power to be second preset power, and staying for a preset period of time; processing the wafers to be processed in the technological cavity by O2 plasma, controlling the power of the inductive coupling plasma etcher to be first preset power and bias power to be third preset power, and staying for a preset period of time; and releasing the wafers, sending the wafers out of the technological cavity to obtain processed wafers, and further effectively removing the basic membrane of the photoresist.

The invention provides a processing technology for an electronic screen, which includes the following steps: (1) forming a sapphire blank; (2) grinding: using double-sided grinding equipment to perform double-sided grinding on the sapphire blank; (3) plasma etching: grinding the sapphire blank Place the semi-finished sapphire electronic screen flat in the etching chamber of the plasma etching machine, close the chamber cover, remove the damage on the surface of the semi-finished sapphire electronic screen, and remove the surface stress; (4) Double-sided polishing: use double-sided polishing equipment to clean the electronic Chemical mechanical polishing of the semi-finished screen; (5) Chamfering: use a chamfering machine to chamfer the edge of the semi-finished electronic screen after double-sided polishing; (6) Coating: use a vacuum coating machine to coat the semi-finished electronic screen after chamfering , to obtain the finished electronic screen. The invention can greatly improve the strength of the electronic screen and meet the strength requirement of the electronic screen.

A semiconductor manufacturing method and a semiconductor manufacturing tool for performing the same are disclosed. The semiconductor manufacturing tool includes a plasma chamber, a mounting platform disposed within the plasma chamber, a focus ring disposed within the plasma chamber, and at least one actuator mechanically coupled to the focus ring and configured to move the focus ring vertically. The actuator is configured to move the focus ring vertically when a plasma is present in the plasma chamber. The provided semiconductor manufacturing method can be used to dynamically control the etching speed of etching process.

The invention relates to a high-voltage coil fixing device of a plasma etcher. A coil skeleton of the device comprises a bottom end connecting ring, upright posts with a groove and a top end connecting ring, wherein more than three upright posts with a groove are uniformly arranged between the bottom end connecting ring and the top end connecting ring; line containing grooves are arranged on each upright post with a groove at equal intervals; the outer side of the upright posts with a groove is provided with a strip pressing plate, and a line pressing groove corresponding to a high-voltage coil is arranged on the strip pressing plate; and the strip pressing plate and the upright posts with a groove are fixedly connected into a whole by bolts. Because the coil skeleton with better rigidity and the strip pressing plate are used to fix the high-voltage coil, the high-voltage coil cannot deform and be separated from the coil skeleton so as to radically eliminate accidents of striking a quartz reaction tube because a winding of the high-voltage coil separates from the coil skeleton, thereby guaranteeing the normal service life of the quartz reaction tube, improving the use reliability of the plasma etcher and saving the production cost.