Plasma etcher

Abstract

The invention discloses a plasma etching machine, which comprises a reaction chamber body (1), a chamber cover (4) and an inner liner (2) surrounding a substrate processing position space, and the chamber cover is detachably sealed on the reaction chamber body On the other hand, the inner liner is detachably arranged in the reaction chamber body, and the side wall of the reaction chamber body is provided with a through groove (11) for the manipulator to enter and exit, and the side wall of the inner liner is provided with an open slot (21), and the open slot Corresponding to the position of the through groove, the side wall of the reaction chamber body is also provided with an operation groove (5) which is arranged at an angle to the side wall of the inner liner. The through groove is connected, and the plasma etching machine also includes a baffle (22) and a pushing mechanism. The pushing mechanism is arranged in the operating groove, and the baffle is connected with the pushing mechanism. In the closed position, the baffle blocks the opening slot, and in the open position, the baffle completely exposes the opening slot.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a plasma etching machine. Background technique [0002] Etching is a very important one-step process in the fields of semiconductor processing, microelectronics manufacturing, LED production, etc. The rapid development of microelectronics promotes its continuous development. Common etching methods mainly include dry etching and wet etching. Plasma etching is a common form of dry etching at present. When the gas is exposed to the electron region, ionized gas and gas with high-energy electrons are generated to form plasma. The ionized gas will release a large amount of energy after passing through the accelerated electric field. etched surface. Compared with other etching technologies, plasma etching technology has simple structure, convenient operation and high cost performance. [0003] In the semiconductor production and processing process, due to the differe...

AI Technical Summary

Problems solved by technology

The existing design is to set a pushing mechanism for pushing the baffle on the upper part of the chamber cover of the reaction chamber. The pushing mechanism pushes vertically from the top of the reaction chamber body and moves up and down. This design occupies the space of the upper part of the chamber cover, making the lining The cleaning of the baffle and the baffle is cumbersome, and it is not easy to disassemble and replace; and when the design is in the closed position of the baffle, the gap between the baffle and the inner liner will inevitably be large, so it is difficult to ensure the uniformity of the plasma, and still There will be a large amount of plasma leakage, which will reduce the ability of the liner to protect the inner wall of the chamber

In addition, the coils emit radiation, which also affects the function of the lining baffle

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