8566results about How to "Reduce contact area" patented technology

The invention relates to an arc-shaped cutting anastomat comprising an anastomosis nail shaping mechanism, a nail pushing assembly, a trigger handle, a nail supporting seat, a base of the nail supporting seat, a knife cushioning ring and two splints, wherein the nail pushing assembly comprises a cutting knife, a nail pushing sheet, a nail bin and a guide post; the end of the nail pushing sheet and both sides of the cutting knife are respectively provided with a plurality of inner nail pushing dental sheets which are near the cutting knife and a plurality of outer nail pushing dental sheets which are far away from the cutting knife; the cutting knife and the nail pushing sheet are injected and molded at a time to be fixed together; the outer side of the each outer nail pushing dental sheet on the nail pushing sheet is provided with a reinforcing rib; the inner side of each nail pushing dental sheet on the nail pushing sheet is provided with a reinforcing rib; both ends of the first guide surfaces of the nail pushing dental sheets are respectively connected with the first contact surfaces and the second contact surfaces of the nail pushing dental sheets through concave arc-shaped connecting surfaces, and both ends of the second guide surfaces thereof are respectively connected with the first contact surfaces and the second contact surfaces through the concave arc-shaped connecting surfaces; and the first contact surfaces and the second contact surfaces are respectively in contact with the inner walls of the nail pushing dental sheet holes of the nail bin. The invention has the advantages of good trigger anastomosis shaping effect and high safety.

A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

A wafer-supporting device for supporting a wafer thereon adapted to be installed in a semiconductor-processing apparatus includes: a base surface; and protrusions protruding from the base surface and having rounded tips for supporting a wafer thereon. The rounded tips are such that a reverse side of a wafer is supported entirely by the rounded tips by point contact. The protrusions are disposed substantially uniformly on an area of the base surface over which a wafer is placed, wherein the number (N) and the height (H [μm]) of the protrusions as determined in use satisfy the following inequities per area for a 300-mm wafer:

(−0.5N+40)≦H≦53; 5≦N<100.

The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means for moving the susceptor vertically between at least a first position and a second position, wafer-lift pins passing through the through-bores wherein the lower end of each wafer pin is attached to a lift member, and a lift member linked with an elevating mechanism for moving the wafer-lift pins vertically. The disclosed apparatus reduces contamination on the underside of the semiconductor wafer.

A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, a support member for supporting the chuck top, and a stand for supporting the support member. The chuck top has a thermal conductivity K1 and a Young's modulus Y1; the support member has a thermal conductivity K2 and a Young's modulus Y2; and the stand has a thermal conductivity K3 and a Young's modulus Y3. K1>K2 and K1>K3; and Y3>Y1 and Y3>Y2.

A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.

The present invention is non-contact magnetically adsorbed wall climbing robot, belongs to the field of robot design technology, and aims at providing robot with both high moving flexibility and great loading capacity. The non-contact magnetically adsorbed wall climbing robot includes wheeled moving mechanism and permanent adsorption mechanism. The wheeled moving mechanism includes chassis, driving mechanism and wheels, which are laid symmetrically, driven in differential mode, and turns on wall by means of the speed difference of the wheels. The permanent adsorption mechanism has no contact with the magnetically conducting wall surface, high magnetic energy utilization, and high adsorption capacity. The wall climbing robot has high loading capacity, high motion flexibility, especially high turning flexibility, and excellent application foreground.

Disclosed is an upper receiver assembly for use with an AR15-type lower receiver. The upper receiver assembly includes a monolithic upper receiver and forearm housing. A barrel has a breech end, a muzzle end, a bore axis, and a barrel trunnion at the breech end having a lug for direct connection to the lower receiver using the pivot pin. It includes a bolt carrier assembly, having a longitudinal slot and rail engagement with the upper receiver housing on which the bolt carrier assembly slidably reciprocates, and a long-stroke gas-piston actuation system. A recoil spring assembly is housed within the monolithic upper receiver and forearm housing and extends coaxially with the longitudinal axis of the gas-piston actuation assembly. The barrel trunnion and gas block are configured for engagement with the upper receiver and forearm housing with longitudinal keyway features.

Coating compositions for producing hydrophobic or super-hydrophobic surfaces and olephobic or super-olephobic surfaces, and to processes for producing such surfaces. In particular, the present invention relates to hydrophobic or olephobic powder coatings and their use for transforming surfaces of articles into hard-to-wet and self-cleaning surfaces.

The invention relates to a light solidifying high-abrasion resistant fingerprint resistant coating which is used for the surfaces of plastic shells of portable electronic products, such as mobile phones, MP3, digital cameras, handheld computers, and the like and comprises the following components: 10-35 percent of high-functionality urethane acrylate, 5-25 percent of bifunctional urethane acrylate, 0.01-20 percent of acrylic ester monomer, 5-20 percent of high-functionality acrylic ester, 5-40 percent of fluorin-contained acrylic ester, 0.01-10 percent of nano inorganic powder filler, 1-5 percent of light initiating agent, 0.01-5 percent of auxiliary agent and 5-30 percent of solvent. The invention improves the fingerprint resistant capability of a coating film by the enrichment and microphase separation of a fluorin-contained group added into the coating on the surface of a coating surface, provides excellent abrasion resistance and hardness by using the polyurethane structure in the coating and the added nano abrasion resistant filler and meets the requirements of abrasion resistance, scratch resistance and fingerprint resistance of the portable electronic products.

The invention relates to a method of interpreting a control command given on a touch screen of a portable electronic device, in which method the combination of a touch on an area interpreted as a contact area and a release of the touch from the area interpreted as said same contact area is interpreted as a control command. The method comprises interpreting, once the contact area has been touched, a larger contact area as said same contact area for the release of the touch than the contact area before the touch.

The invention provides a power-dissipation-free and energy-saving type start protector of a single phase AC motor and belongs to the technical field of refrigeration compressors. The power-dissipation-free and energy-saving type start protector comprises a shell, a shell cover, an overload protector, a power-dissipation-free starter and an external terminal mechanism. The shell is provided with an overload protector seat, a power-dissipation-free starter accommodation cavity, an external terminal mechanism cavity and a start controller accommodation cavity. The shell cover is provided with a first three-terminal jack and a second three-terminal jack. The overload protector is arranged in an overload protector accommodation cavity. The power-dissipation-free starter comprises a power-dissipation-free starter body and a start controller. The external terminal mechanism is matched with the external terminal mechanism cavity. The start protector is characterized in that the external terminal mechanism cavity comprises a first insertion cavity, a second insertion cavity and a third insertion cavity, the second insertion cavity is formed in the left side of the shell, and the bottom wall of the second insertion cavity is provided with a second shell insertion groove; the first insertion cavity and the third insertion cavity are formed in the right side of the shell, a first shell insertion groove is formed in the bottom wall of the first insertion cavity, and a third shell insertion groove is formed in the bottom wall of the third insertion cavity; the external terminal mechanism comprises a first insertion piece and a second insertion piece, the first insertion piece is matched with the second shell insertion groove in an inserted mode, and the second insertion piece is matched with the first shell insertion groove in an inserted mode.

A handheld or pocketsized electronic apparatus, such as a mobile telephone, having a display unit and a touch surface that is position-sensitive in a first and second direction for control of the electronic apparatus; the display unit having a display area taking up most of the front side of the apparatus and the touch surface being sufficiently narrow to fit on the side edge of the apparatus and curved in the first direction to convex shape, thus making it simple for a user to control the apparatus with one hand, without the display being hidden, and in an ergonomically correct manner, whereby control of the apparatus is attained without the use of a keyboard or similar input device.

A phase change memory with adjustable resistance ratio is disclosed, which includes a phase change layer and an interfacial layer formed to be in contact with each other, and at least two electrodes in contact with the phase change layer and the interfacial layer respectively. The contact sections between the two electrodes and the phase change layer and the interfacial layer define a contact area respectively, wherein, the area defined by the contact section between the electrode and the phase change layer is larger than the area defined by the contact section between the electrode and the interfacial layer.

A phase change memory device having a reduced contact area and a method for manufacturing the same is presented. The phase change random access memory device includes a bottom electrode contact pattern layer, and at least one phase change pattern layer formed on a sidewall of the bottom electrode contact pattern layer. The contact areas are minimized by being between the narrow width of the bottom electrode contact pattern layer, i.e., at the sidewall, and the phase change pattern layers. As a result the minimized contact area is proportional to the thickness of the bottom electrode contact pattern layer.