1011results about How to "Reduce resistance" patented technology

A capacitive input device includes a translucent substrate; first translucent electrode lines, extending in a first direction; second translucent electrode lines, extending in a second direction intersecting with the first direction; interlayer insulating layers; and relay electrodes. The first translucent electrode lines intersect with the second translucent electrode lines at intersecting portions. Portions of one of each first translucent electrode line and each second translucent electrode line are connected to each other with the intersecting portions. Portions of the other are separated from each other with the intersecting portions. The translucent interlayer insulating layers overlie the first or second translucent electrode line portions connected to each other with the intersecting portions. The translucent relay electrodes overlie the interlayer insulating layers to electrically connect the first or second translucent electrode line portions, separated from each other with the intersecting portions, to each other.

A manufacturing method of a thin film transistor having at least a gate electrode, a gate insulation film, an oxide semiconductor layer, a first insulation film, a source electrode, a drain electrode, and a second insulation film on a substrate, including: forming the gate electrode on the substrate; forming the gate insulation film on the gate electrode; forming a semiconductor layer including amorphous oxide on the gate insulation film; patterning the gate insulation film; patterning the oxide semiconductor layer; reducing the oxide semiconductor layer in resistance by forming the first insulation film on the oxide semiconductor layer in the atmosphere not including an oxidized gas; patterning the first insulation film and forming a contact hole between the source electrode and the drain electrode and the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer in the oxide semiconductor layer through the contact hole; forming the source electrode and the drain electrode through the contact hole and allowing the first insulation film to be exposed; patterning the exposed first insulation film and allowing a channel region of the oxide semiconductor layer to be exposed; and increasing the channel region in resistance by forming the second insulation film on the surface including the channel region of the oxide semiconductor layer in the atmosphere including an oxidized gas.

A device for needle biopsy is provided. The device includes a handle member having proximal and distal portions. A proximal handle member is disposed to the proximal portion of the handle member and a distal handle member is disposed to the distal portion of the handle member. A sheath lumen is disposed within the handle member and extends from the distal portion of the handle member. A needle housing member is partially disposed to the proximal portion of the handle member and a needle is disposed within the sheath lumen. A plurality of protrusions are disposed upon the needle.

An electrode structure is disposed on a substrate of a solar cell. The electrode structure includes a plurality of bus electrodes, a plurality of finger electrodes, and at least one connection electrode. The bus electrodes are separately disposed on the substrate. The finger electrodes are disposed on two sides of the bus electrodes and electrically connect to the bus electrodes. The connection electrode is disposed on a side of the substrate and connects with at least two finger electrodes. The connection electrode, bus electrodes and the finger electrodes are formed by at least two screen printing processes, and at least one of the screen printing processes does not form the bus electrodes. Thus, the thicknesses of the finger electrodes are greater than those of the bus electrodes.

The invention discloses a cabinet air conditioner indoor unit, which comprises an appearance shell of the indoor unit, an indoor heat exchanger, a water collecting disk, an indoor air supply motor, afan, a motor bracket and a control box, wherein the appearance shell of the indoor unit consists of a front panel, a lower panel, a base, a rear cavity and a top cover; the indoor heat exchanger, thewater collecting disk, the indoor air supply motor and the fan are arranged in the appearance shell of the indoor unit; the motor bracket is used for assembling the air supply motor, and the control box controls the indoor unit to operate; the upper side of a back part is provided with a plurality of rows of air suction inlets for sucking indoor air; the front side of the air suction inlets is vertically provided with the indoor heat exchanger; the front side of the indoor heat exchanger near an air outlet flow deflector is vertically provided with two crossflow fans; and the lower sides of the two fans are provided with two motors driving the crossflow fans to rotate. The cabinet air conditioner is symmetrically provided with a set of crossflow fans and the heat exchanger left and right respectively, reduces system resistance, increases air volume, makes air flow direction vertical to the heat exchanger, makes the heat exchanger evenly exchange heat and improves the heat exchange effect.

A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.

Catheter device, comprising a catheter (2) for introduction into a hollow organ, especially a vessel, with a number of bending elements (12, 12a-12f, 12a′-12e′) arranged around the longitudinal axis of the catheter and distributed over at least a part of the catheter length, which can be activated separately for a specified change of shape via a control device (5), as well as a number of bending sensors (15, 15a-15e, 15a′-15e′) arranged around the longitudinal axis of the catheter and distributed over at least a part of the catheter length communicating with a control device (5), with the control device (5) being embodied to determine the given geometrical shape of the catheter (2) on the basis of the bending sensor signals and to determine the change of shape of the bending elements (12, 12a-12f, 12a′-12e′) necessary for a movement of the catheter (2) by a forward movement length preferably specifiable on the user side to enable the catheter (2) to move by itself at least in part, by explicit bend-dependent force application to the wall of the organ (16).

A system and method for evaluating the tridimensional kinematics of the knee is presented wherein the system comprises a gesture-guiding apparatus designed to guide a patient through a repeatable, consistent and standardized motion in view of evaluating the condition of the patient's knees. A hack squatting motion, which generally involves a substantially linear vertical squatting motion of the body, is used to isolate the leg and knee movements and increase repeatability. The patient's upper body is generally stabilized and optionally constrained such that a standardized orientation and alignment thereof is maintained throughout the motion. The patient's feet may also be stabilized and constrained. Motion resistance settings may be provided using a set of adjustable weights and counterweights to accommodate various patients and patient conditions.

When a step-up ratio control circuit sets a step-up ratio of a charge pump circuit to 1.0 to enable a short mode, a path inside the charge pump circuit is short-circuited and a first transistor is completely turned on. This produces an inrush current derived from a battery voltage of a lithium ion battery flowing into the charge pump circuit. To address this, a constant current circuit is operated so that the first transistor is turned on slowly. Further, the operation of an oscillator and an operational amplifier is suspended when the short mode is enabled.

A semiconductor device in which a shift of the threshold voltage of a transistor is suppressed is provided. A semiconductor device in which a decrease in the on-state current of a transistor is suppressed is provided. The semiconductor device is manufactured as follows: forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film over the gate insulating film; forming a metal oxide film having a higher reducing property than the oxide semiconductor film over the oxide semiconductor film; performing heat treatment while the metal oxide film and the oxide semiconductor film are in contact with each other, thereby the metal oxide film is reduced so that a metal film is formed; and processing the metal film to form a source electrode layer and a drain electrode layer.

The invention discloses a composite electrode material and an application thereof. The composite electrode material comprises an electrode active material, oxide nanoparticles, a coating layer, an inorganic nano filler and a conductive agent, wherein the electrode active material comprises an electrode active raw material; the electrode active raw material is an anode active raw material or a cathode active raw material; the oxide nanoparticles are distributed on the surface of the electrode active raw material; the coating layer coats the electrode active material, and comprises an electrolyte material; the inorganic nano filler is dispersed in the electrolyte material; and the conductive agent is dispersed in the electrolyte material. An all-solid lithium ion battery prepared by the composite electrode material has the characteristics of low interfacial resistance, high safety performance, good chemical stability, high output energy density and the like.

A light emitting apparatus with high homogeneity in image quality is provided, which includes anodes 102 on an insulator 101, cathodes 107 orthogonal to the anodes 102, and EL layers 106 interposed between the anodes 102 and the cathodes 107, and auxiliary wirings 103 are electrically connected to the anodes 102. The auxiliary wirings 103 are made of a material lower in resistance than that of the anodes 102, thereby being capable of reducing the wiring resistance of the anodes 102.

The present invention features a field effect transistor forming on a semiconductor substrate having formed thereon gate, source and drain regions, with said gate region having a lateral gate channel. A plurality of spaced-apart trenches each having an electrically conductive plug formed therein in electrical communication with said gate, source and drain regions, with said trenches extend from a back surface of said semiconductor substrate to a controlled depth. A trench contact shorts the source region and a body region. A source contact is in electrical communication with said source region and a drain contact in electrical communication with said drain region, with said source and drain contacts being disposed on opposite sides of said gate channel.

The present invention relates to improvements to powered air purifying respirators (PAPR). PAPR are known generally for use in polluted environments. A typical PAPR comprises a powered impellor arranged to draw air from the atmosphere, a filter element and a mask to provide the filtered and pressurized air to the user. Embodiments of the present invention place a generator unit, comprising a filter and impellor for pressurizing the air, behind the head of the user, and include components for improving delivery of the air to the user and improving its quality.

FinFET devices formed with a Silicon On Insulator (SOI) technology with reduced Drain Induced Barrier Lowering (DIBL) characteristics and methods for producing the same. The methods involve dopant implants into the insulator layer, thereby creating borophosphosilicate glass (BPSG) diffusion sources within the insulation layer underlying the active regions of the SOI wafer. Backend high temperature processing steps induce diffusion of the dopants contained in the diffusion source into the active regions, thereby forming a retrograde dopant profile extending towards the channel region. The method can be selectively applied to selected portions of a wafer to tailor device characteristics, such as for memory cells.

An elbow fitting for use in a pneumatic product conveying system expands from the inlet pipe along the outer side of the elbow fitting and contracts along the outer side of the fitting toward the outlet pipe for guiding product particles into the outlet pipe. The expanded structure of the elbow fitting defines a generally triangularly shaped configuration that provides a wide surface over which an accumulated layer of product particles moves at a lower velocity than the velocity of the incoming product stream. The accumulation layer of product forms a moving contact surface for deflecting incoming product particles toward the outlet pipe with a minimum of pressure resistance and product attrition. The configuration of the expanded elbow fitting provides a slowly moving layer of accumulated product particles due to the law of gravity and Bernoulli's Law.

The present invention provides a high power inhibition foam capable of preventing and controlling coal self-combustion and its generation equipment. It is characterized by that the pressure water flow is mixed with high power inhibition foam raw liquor according to a certain ratio, then their mixture is fed into a spray mixer under the action of negative pressure formed by water pressure and gas with a certain pressure in sprayer, and the gas, water and high power inhibition foam raw liquor can be fed into a foaming device by means of spraying mode under the gas pressure so as to make foam formation. Said foam can be used for covering coal body, and can be used for preventing coal self-combustion.

ET-743 can be used to mitigate resistance to and potentiate the cytotoxic effects of a platinum coordination complex anti-neoplastic agent in a human cancer patient.

A vehicle having one or more small vehicle-mounted electricity generating wind turbines located within an area of wind recirculation. The electricity generated is used to recharge vehicle batteries, partially power an auxiliary electric propulsion motor, or supply vehicle parasitic loads.

A submersible vessel having wing and keel assemblies that are extendable for wind-powered surface operation and retractable to reduce drag for submerged operation or to place the vessel in a more compact configuration. A deployment mechanism including an actuator and linkage pivots the wing and keel assemblies simultaneously between the deployed and retracted configuration. The vessel may have first and second pressure hulls flanking the wing and keel assemblies. A drive mechanism including a motor and a gear train employing pulley-and-cable assemblies rotates either the wing and flap together such that the flap angle relative to the wing is constant, or to change the flap angle relative to the wing with the wing angle of incidence held constant. The invention also provides a retractable wind-powered propulsion apparatus that is mountable to the hull assembly of a submersible or non-submersible vessel.

This invention relates to a systems and methods of controlling the flow of a fluid in a capillary or microfluidic channel. A first pair of electrodes can influence the wetting of a fluid front at a relatively hydrophobic surface in the channel. A second pair of electrodes can electrolytically generate a bubble that can stop fluid flow when it contacts the hydrophobic surface. Flow of a fluid in a channel can be stopped on contact with the hydrophobic surface and restarted when an electrostatic field reduces the contact angle of the fluid at the hydrophobic surface. The electrostatic field can be removed and the fluid stopped again when an electrolytically generated bubble contacts the hydrophobic surface to reestablish the blocking contact angle of the fluid, gas and surface.

A touch-sensing panel including a substrate, a plurality of first electrode series, a plurality of second electrode series, and a plurality of first floating patterns is provided. Each of the first electrode series includes a plurality of first touch-sensing pads and a plurality of first bridge patterns. The second electrode series are disposed on the substrate and electrically insulated from each other. The second sensing series are intersected with and electrically insulated from the first sensing series. Each of the second electrode series includes a plurality of second touch-sensing pads and a plurality of second bridge patterns. The first floating patterns are disposed between the first sensing series and the second sensing series. Each of the first touch-sensing pads includes at least one extending portion. In addition, there is no first floating pattern located between the extending portion and the second electrode series adjacent thereto.

A semiconductor device and a manufacturing method thereof uses a semiconductor substrate of silicon carbide. On one principal surface side of the substrate, at its central section, a layer of silicon carbide or gallium nitride as a semiconductor layer having the thickness at least necessary for breakdown voltage blocking is epitaxially grown or formed from part of the substrate. A recess is formed in the other principal surface side of substrate at a position facing the central section. A supporting section surrounds the bottom of the recess and provides the side face of the recess. The recess is formed by processing such as dry etching. The semiconductor device, even though the semiconductor substrate is made thinner for the realization of small on-resistance, can maintain the strength of the semiconductor substrate capable of reducing occurrence of a wafer cracking during the manufacturing process.

A filler pipe, wherein a flow path for a fluid is formed through multiple resin materials being extruded simultaneously and wherein a corrugated part is shaped through peaks and valleys disposed continuously, comprises an outer layer formed from a high density polyethylene, a barrier layer formed from EVOH with superior resistance to fuel permeation, and an inner layer, formed from high density polyethylene. The structure is such that d<L when the depth from the apex of the peak to the bottom of the valley is defined as d, and the distance from the apex of the peak to the barrier layer is defined as L.

The invention relates to low-moisture low-variable serial saturation tower thermal CO transformation technology, which comprises the following steps: after processing gas-liquid separation, heat exchange and detoxification to crude gas, feeding the crude gas into a pre-transformation furnace to process initial transformation reaction; controlling the mol ratio of crude gas water/dry gas which enters the pre-transformation furnace within 0.19-0.23, and controlling the temperature thereof within 200-220 degrees centigrade; feeding pre-transformed mixing gas from a crude pre-heater into a saturation tower and contact with technical circular water of a hot water tower reversely so as to transmit heat and quality; increasing humidity and temperature of the pre-transformed mixing gas, feeding into the pre-transformed mixing gas into an isothermal transformation furnace so as to process depth transformation; exchanging gas and heat of the isothermal exchange gas of the isothermal transformation furnace so as to feed into the hot water tower to transmit the heat and quality; and recycling low-order heat energy. Compared with the prior art, the isothermal transformation furnace substitutes at least two grades of heat isolating transformation furnaces; the number of transformation furnaces is reduced; equipment investment and catalyst cost are saved; in addition, a transformation procedure is short, resistance is small, energy consumption is low and operation is stable.

A semiconductor device includes at least one thin-film transistor 116, which includes: a crystalline semiconductor layer 120 including a region 110 to be a channel region and source and drain regions 113; a gate electrode 107 for controlling the conductivity of the region 110 to be a channel region; a gate insulating film 106 arranged between the semiconductor layer 120 and the gate electrode 107; and source and drain electrodes 115 connected to the source and drain regions 113, respectively. At least one of the source and drain regions 113 contains an element to be a donor or an acceptor and a rare-gas element, but the region 110 to be a channel region does not contain the rare-gas element. The atomic weight of the rare-gas element is greater than that of the element to be a donor or an acceptor. The concentration of the rare-gas element in the at least one region as measured in the thickness direction thereof decreases continuously from the upper surface of the at least one region toward its lower surface.

A flexible printed circuit improves data transfer rates by disposing ground wires in a ground plane proximate to signal wires disposed in a signal channel plane. One or more ground wires is associated with each signal wire pair or each signal wire for imaging of the return currents of the signal pairs. An overlapping alignment minimizes loop area between a ground wire and its associated signal wire. An offset alignment provides a reduced loop area and reduced breakage risk since movement of the flexible circuit does result in compression of the signal wire and its associated ground wire. A combination of overlapping and offset alignment balances signal transfer effectiveness with breakage risk by offsetting ground and signal wires is stress sensitive regions and overlapping ground and signal wires in stress tolerant regions. In one embodiment, the flexible circuit interfaces a portable computer with a display lid to support high-speed display signals with reduced breakage risk from cycling the display lid between an open and closed position.

A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage.

An asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method. The JFET includes a bottom gate on an insulator layer, a channel region on the bottom gate and, on the channel region, source/drain regions and a top gate between the source/drain regions. STIs isolate the source/drain regions from the top gate and a DTI laterally surrounds the JFET to isolate it from other devices. Non-annular well(s) are positioned adjacent to the channel region and bottom gate (e.g., a well having the same conductivity type as the top and bottom gates can be connected to the top gate and can extend down to the insulator layer, forming a gate contact on only a portion of the channel region, and/or another well having the same conductivity type as the channel and source/drain regions can extend from the source region to the insulator layer, forming a source-to-channel strap).

The invention discloses a quasi-plastic cuttlefish-imitating pulse jet propeller and relates to a cuttlefish-imitating pulse jet propeller. The cuttlefish-imitating pulse jet propeller solves the problems that the existing pulse jet propeller has little thrust, low propelling speed, large noise and poor bionic effect. The large-diameter end of the silica gel hopper (2) is connected with the innerwall of an opened end of a cuttlefish-imitating outer sleeve film (3); the bin body (4) is arranged in the cuttlefish-imitating outer sleeve film (3); a plurality of bars (7) are respectively embeddedin the cuttlefish-imitating outer sleeve film (3) along the peripheral direction of the cuttlefish-imitating outer sleeve film (3); all the bars (7) are respectively arranged along the bus directionof the cuttlefish-imitating outer sleeve film (3); and two adjacent bars (7) are connected by a shape memory alloy wire (5) or the front ends and the rear ends of a plurality of bars (7) are connectedby two shape memory alloy wires (5). The quasi-plastic cuttlefish-imitating pulse jet propeller has little resistance at the outer wall when in propelling, realizes deeper submergence, has simple structure, realizes silent propelling and has fast propelling speed.