260 results about "Electron blocking layer" patented technology

An organic light-emitting device comprises an anode, a cathode and an organic layer formed between the anode and the cathode, and the organic layer comprises a hole injection layer, a hole transmission area, an electron blocking layer, a light-emitting area and an electron transmission area. The hole transport region comprises a first material and a second material, the first material and the second material are sequentially evaporated to form two hole transport layers, and the first material is selected from a compound shown in the formula 1; and the second material is selected from a compound shown in a formula 2. According to the invention, the first material with a high refractive index is used as the first hole transport layer, the second material with a low refractive index is used as the second hole transport layer, and the structures of the first material and the second material are respectively limited at the same time. The invention overcomes the limitation of a single material or a simple mixed material in the aspects of hole transport and luminous efficiency. .

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

This invention relates to an aromatic amine organic compound and an organic electroluminescent device containing the same, belonging to the field of semiconductor materials technology. The structure of the compound provided by this invention is shown in general formula (1): When the hole transport material or electron blocking layer material of the organic electroluminescent device is prepared by using the aromatic amine compound of this invention, the device voltage can be reduced and the device life can be extended at the same time, especially the device high temperature life is significantly improved.

The invention relates to a blue-green dual-band light-emitting diode epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially stacked in the epitaxial direction. The multi-quantum light-emitting layer comprises a first blue light InGaN layer, a first blue light barrier layer, a first green light barrier layer, a first green light InGaN layer, a second green light barrier layer, a second blue light InGaN layer and a second blue light barrier layer which are sequentially, periodically and alternately grown in the epitaxial direction. The first green light barrier layer comprises a pre-well low-energy-level barrier layer, a pre-well high-energy-level barrier layer and a pre-well polarization compensation barrier layer which are sequentially grown along the epitaxial direction; the second green light barrier layer comprises a post-well polarization compensation barrier layer, a post-well high-energy-level barrier layer and a post-well low-energy-level barrier layer which are sequentially grown along the epitaxial direction; the preparation cost of the backlight source can be effectively reduced, the use of fluorescent powder is reduced, the luminous efficiency is high, and the color rendering performance is good.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The invention discloses a GaN-based blue-green light LED epitaxial structure and a preparation method thereof, and a GaN-based blue-green light LED. The GaN-based blue-green light LED epitaxial structure comprises a substrate, and a buffer layer, a 3D layer, a U-GaN layer, an N-GaN layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer which are stacked on the substrate in sequence; wherein the multi-quantum well layer comprises a shallow well transition layer, a first quantum well layer, a second quantum well layer, a stress release layer and a third quantum well layer which are stacked in sequence; the growth temperature of the first quantum well layer is greater than the growth temperature of the second quantum well layer and greater than the growth temperature of the third quantum well layer, and the number of cycles of alternate stacking of the second quantum well layer is greater than the number of cycles of alternate stacking of the third quantum well layer; the stress release layer is an AlGaN layer or an AlN layer and a GaN layer, wherein the AlN layer and the GaN layer are periodically and alternately stacked. According to the invention, the turn-on voltage of the GaN-based blue-green light LED can be effectively improved.

The invention discloses a three-dimensional asymmetric photonic crystal laser and a preparation method thereof. An epitaxial structure of the three-dimensional asymmetric photonic crystal laser comprises an N-type electrode, an N-type InP substrate, an N-type Al < x > < 1 > In < 1-x > < 1 > As upper limiting layer, a quantum well active region, a P-type Al < y > < 1 > In < 1-y > < 1 > As electron barrier layer, a P-type Ga < z > < 1 > In < 1-z > < 1 > Asz < 2 > P < 1-z > 2 functional layer, a P-type Al < x > < 2 > In < 1-x > < 2 > As lower limiting layer, a P-type InP connecting layer, a bottom insulating layer and a P-type electrode, wherein a three-dimensional asymmetric photonic crystal is etched on the P-type GaInAsP functional layer, and a chiral characteristic is introduced by destroying the symmetry of the photonic crystal, so that the P-type GaInAsP functional layer vertically emits a single-mode light beam with left-handed or right-handed circular polarization. By designing an asymmetric photonic crystal structure, efficient output of circularly polarized light beams is achieved, polarization selectivity and light beam quality are remarkably improved, and the advantages of low divergence angle and high light beam stability are achieved.

The invention relates to the technical field of semiconductor devices, in particular to a blue-green dual-waveband LED epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially arranged in the epitaxial direction. The multi-quantum well light-emitting layer comprises a non-light-emitting region superlattice layer, a non-light-emitting region quantum well layer, a green light quantum well layer and a blue light quantum well layer which are sequentially, periodically and alternately grown in the epitaxial direction. The backlight source is low in cost, the use of fluorescent powder can be reduced, and the display effect is good.

A light emitting display device may include a first insulating film having recess portions and a flat portion between adjacent recess portions at first and second subpixels adjacent to each other, a first electrode in a recess portion of each of the first and second subpixels, a dummy pattern on the flat portion of the first insulating film and spaced apart from the first electrode, a first electron blocking layer at the first subpixel and a second electron blocking layer at the second subpixel, the first and second electron blocking layers having an edge on the dummy pattern and spaced apart from each other, a first color light emitting layer provided at the first subpixel and covering the edge of the first electron blocking layer, a second color light emitting layer on the second electron blocking layer, and a second electrode on the first and second color light emitting layers.

The present invention relates to the technical field of semiconductor lasers, and particularly relates to a GaN-based blue laser and a preparation method thereof, including a substrate, on which an N-type GaN layer, an N-type lower confinement layer, an N-type lower waveguide layer, an active region, an upper waveguide layer, a P-type electron blocking layer, a P-type upper confinement layer, and a P-type contact layer are sequentially stacked; the P-type upper confinement layer is composed of at least one U-shaped GaN sub-layer and multiple layers of P-type In x Al y Ga 1‑x‑y N sub-layers stacked and compounded, where 0 ≤ x < y < 1, 0 < x < 1, 0 < x + y < 1. The present invention uses at least one U-shaped GaN sub-layer and multiple layers of P-type In x Al y Ga 1‑x‑y N sub-layers stacked and compounded to form the P-type upper confinement layer, which not only improves the crystal quality of the material, enhances the radiative recombination in the active region of the LD device, thereby improving the output optical power and photoelectric conversion efficiency of the LD, but also reduces the voltage and thermal loss of the LD device, and improves the aging life and other performance of the LD device.

Provided is a a semiconductor laser module, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper limiting layer. The active layer satisfies at least one of that a content ratio of an element Al to an element H satisfies a first preset proportion distribution, a content ratio of an element In to the element H satisfies a second preset proportion distribution, a content ratio of an element Si to the element H satisfies a third preset proportion distribution, a content ratio of an element Mg to the element H satisfies a fourth preset proportion distribution, and a content ratio of an element C to an element O satisfies a fifth preset proportion distribution.

A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20, an n-type waveguide layer 30, a light-emitting layer 40, a p-type waveguide layer 50, and a p-type confinement layer 60 that are sequentially stacked. The p-type waveguide layer 50 includes a first p-type waveguide sub-layer 51, an electron blocking layer 52, and a second p-type waveguide sub-layer 53 that are sequentially stacked, where the first p-type waveguide sub-layer 51 is disposed closer to the light-emitting layer 40 than the second p-type waveguide sub-layer 53, and the electron blocking layer 52 includes at least one oxide layer of aluminumygallium1-yarsenide (AlyGa1-yAs) 521.

This invention discloses a light-emitting diode (LED) epitaxial wafer and its fabrication method. The LED epitaxial wafer includes a substrate and a buffer layer, an N-type GaN layer, a stress relief layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially stacked on the substrate. The stress relief layer includes a Si-doped GaN layer, a Si-doped porous GaN layer, a GaN leveling layer, and an InGaN / GaN superlattice layer sequentially stacked on the N-type GaN layer. The LED fabricated by this invention can reduce the stress and defect density of the epitaxial layer material, improve the quality of the multiple quantum well layer, and enhance the radiative recombination efficiency in the multiple quantum well layer, thereby improving the luminous efficiency of the LED.

A quantum dot light emitting structure and a method for manufacturing the quantum dot light emitting structure, and an array substrate are disclosed. The quantum dot light emitting structure includes: a quantum dot light emitting layer; an electrode; and an electron transport layer located between the quantum dot light emitting layer and the electrode, the quantum dot light emitting structure further comprises an electron blocking layer located in the electron transport layer, a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is different from a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.

The application provides a gallium nitride-based semiconductor laser with a divergence angle modulation layer, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper limiting layer and a contact layer, wherein the lower limiting layer comprises, from bottom to top, a first lower limiting layer, a second lower limiting layer and a third lower limiting layer, a first divergence angle modulation layer is arranged between the substrate and the first lower limiting layer, and a second divergence angle modulation layer is arranged between the second lower limiting layer and the third lower limiting layer. The normalized Al atomic concentration curves of the SIMS tests of the first divergence angle modulation layer and the second divergence angle modulation layer both satisfy Lorentz function distribution, so that a carrier transverse expansion region is formed in the first divergence angle modulation layer and the second divergence angle modulation layer, the transverse expansion and mobility of carriers are enhanced, the active layer recombination width in the horizontal divergence angle direction of the laser is increased, and the horizontal divergence angle is enlarged.

The present disclosure provides a light-emitting device and a display device, the light-emitting device comprising a plurality of functional layers stacked in sequence, the plurality of functional layers comprising an anode, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and a cathode, the light-emitting layer comprising at least two light-emitting bodies, different light-emitting bodies corresponding to different color sub-pixels; the light-emitting device further comprising at least one energy level transition film layer, the energy level transition film layer being arranged between at least one light-emitting body and the hole transport layer and / or the hole blocking layer, wherein the energy band gap difference between two functional film layers adjacent to the energy level transition film layer is greater than a predetermined value, and the energy level of the energy level transition film layer is between the two functional film layers adjacent thereto. The light-emitting device and the display device provided by the embodiments of the present disclosure can improve the light-emitting efficiency of the light-emitting body, so as to improve the problems such as poor display caused by the difference in light-emitting characteristics of RGB three sub-pixels.

The application discloses a micro light emitting diode based on polarization orientation difference regulation and a preparation method thereof. The micro light emitting diode comprises a substrate layer, and a plurality of first regions and second regions arranged alternately on the substrate layer; the first region comprises a non-doped nitrogen-polar nitride layer, a first n-type ohmic contact layer and an n-type electrode which are sequentially stacked; the second region comprises a nucleation layer, a non-doped metal-polar nitride layer, a second n-type ohmic contact layer, a multi-quantum well active region, an electron blocking layer, a p-type hole injection layer, a p++-type ohmic contact layer and a p-type electrode which are sequentially stacked; wherein the second region is a light emitting unit of the device, and a mesa structure thereof is defined by wet etching; the first region and the adjacent second region form a homopolar junction in the horizontal direction. By constructing nitride epitaxial structures with different polarities on the same substrate, a lateral carrier migration potential barrier is formed, and at the same time, etching damage is eliminated by wet etching, so that side wall non-radiative recombination is avoided.

This invention discloses an epitaxial wafer for a deep ultraviolet (UV) light-emitting diode (LED) and its fabrication method, relating to the field of semiconductor optoelectronic devices. The UV LED epitaxial wafer includes a substrate and a buffer layer, an N-type AlGaN layer, an active layer, an electron blocking layer, and a P-type AlGaN layer sequentially grown on the substrate. The active layer has a periodic structure, with each period comprising a sequentially stacked quantum well layer and a quantum barrier layer, and the number of periods in the active layer is ≥2. The quantum barrier layer comprises a sequentially stacked AlInGaN layer and a P-AlInGaN layer. Implementing this invention can effectively improve the luminous efficiency of deep ultraviolet LEDs.

An organic compound and a use thereof. The organic compound, by means of the design of the molecular structure thereof, has excellent optoelectronic properties and suitable HOMO and LUMO energy levels, with high hole mobility and good stability, and is capable of exhibiting excellent electron-blocking performance and hole-transport performance. The organic compound is applied in an organic electroluminescent device and is suitable for use as a hole transport layer material and / or an electron blocking layer material, and can effectively improve the luminous efficiency and stability of the device, extend the device lifetime, and reduce voltage and energy consumption.

The utility model discloses a light emitting diode epitaxial wafer and a light emitting diode. The light emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a U-GaN layer, an N-GaN layer, an insertion layer, a stress release layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer which are stacked on the substrate in sequence. Wherein the insertion layer at least comprises a Si3N4 layer. The light-emitting efficiency of the light-emitting diode provided by the utility model is obviously improved.

The application discloses a deep ultraviolet light emitting diode epitaxial wafer and a preparation method thereof and a deep ultraviolet LED, and the deep ultraviolet light emitting diode epitaxial wafer comprises a substrate and a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer, an electron blocking layer, a P-type transition layer and a P-type contact layer which are sequentially stacked on the substrate; the P-type semiconductor layer comprises an Al x GaN gradient layer, an Al m Ga(In n )N hole injection layer and an Al y GaN gradient layer in sequence on the multi-quantum well layer, wherein x ranges from 0.3 to 1, y ranges from 0.3 to 1, 0.3<=m<=0.8 and n<=0.05. The deep ultraviolet light emitting diode epitaxial wafer provided by the application can improve the hole injection efficiency and quality of the P-type material, enhance the matching degree of the active region electron hole, and thus improve the light emitting efficiency of the ultraviolet light emitting diode.

This disclosure provides a light-emitting diode and a method for fabricating the same, belonging to the field of light-emitting devices. The light-emitting diode includes: an epitaxial layer; the epitaxial layer includes an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, an in-situ passivation layer, and a P-type semiconductor layer stacked sequentially; the in-situ passivation layer is an AlGaN layer doped with Mg and Si.

The present invention relates to an electronic device comprising at least at least two subpixels, where the subpixels comprise a common hole-transport layer c-HTL and different electron-blocking layers EBL1 and EBL2, where the interface charge density ICD at the interface of c-HTL / EBL1 and c-HTL / EBL2, fulfils specific criteria.

The present application relates to a kind of perovskite solar cells and its passivation method, the electron blocking layer is made of acyl chloride group derivative, on the one hand, the carbonyl group in acyl chloride group can be coordinated with the Pb 2+ Ion forms Lewis acid-base pair, thereby significantly reduce the defect state density of perovskite surface.Let go of group Cl ‑ Ion can increase the grain size of perovskite, improve the crystalline quality of perovskite layer.In addition, acyl chloride group and perovskite component reaction generates electron blocking layer cesium acetate, reduces the charge recombination at interface, while it can promote energy level gradient arrangement, effectively improve the separation and extraction capacity of carrier, successfully improve the photoelectric conversion efficiency and stability of carbon-based hole-free all-inorganic perovskite solar cell, and significantly reduce the hysteresis effect.The present application process is simple and has universality, is conducive to promoting the commercialization of perovskite, has wide market demand and application prospect.

The embodiment of the invention relates to an electrochromic device and a preparation method and application thereof, and the electrochromic device comprises a heat sealing film frame body, first indium tin oxide (ITO) conductive glass, an electron blocking layer, second indium tin oxide (ITO) conductive glass and an electrochromic layer; a solution injection hole is reserved in the heat sealing film frame body; the first indium tin oxide (ITO) conductive glass is positioned on one side of the heat-sealing film frame body; the electron blocking layer and the second indium tin oxide I-TO conductive glass are located on the other side of the heat sealing film frame, and the electron blocking layer and the first indium tin oxide I-TO conductive glass are oppositely arranged, so that a containing cavity is formed between the electron blocking layer and the first indium tin oxide I-TO conductive glass; the component of the electrochromic layer is a tungsten oxide quantum dot solution of metal perchlorate, and the solution is injected into the containing cavity through the solution injection hole.

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and a light emitting diode, and relates to the field of semiconductor photoelectric devices. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an intercalation layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence; the intercalation layer comprises an AlN layer and a superlattice layer; the superlattice layer comprises P-AlN layers, P-InN layers and P-GaN layers which are stacked in sequence, and the number of periods is greater than or equal to 2. By implementing the application, the light emitting efficiency of the light emitting diode can be improved.

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a dislocation regulation and control layer, an N-type GaN layer, a low-temperature stress release layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially arranged on the substrate, and the dislocation regulation and control layer is of a periodic structure. Each period comprises a first three-dimensional Si-doped GaN layer, a second three-dimensional Si-doped GaN layer, a first two-dimensional Si-doped GaN layer and a second two-dimensional Si-doped GaN layer which are stacked in sequence; wherein the thickness of the first three-dimensional Si-doped GaN layer is h1, the doping concentration of Si is C1, and the growth temperature of the first three-dimensional Si-doped GaN layer is T1; the thickness of the second three-dimensional Si-doped GaN layer is h2, the doping concentration of Si is C2, and the growth temperature of the second three-dimensional Si-doped GaN layer is T2; the thickness of the first two-dimensional Si-doped GaN layer is h3, the doping concentration of Si is C3, and the growth temperature of the first two-dimensional Si-doped GaN layer is T3; the thickness of the second two-dimensional Si-doped GaN layer is h4, the doping concentration of Si is C4, and the growth temperature of the second two-dimensional Si-doped GaN layer is T4; h1 < h2 < h3 < h3, C1 < C2 < C3 < C4, and T1 < T2 < T3 < T4. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

The invention discloses a color-changing organic light-emitting device and a preparation method and application thereof. The organic light-emitting device comprises an anode, a cathode and an organic functional layer arranged between the anode and the cathode, and the organic functional layer comprises a hole injection layer, a hole transmission layer, an electron blocking layer, a light-emitting layer and an electron transmission layer which are arranged in sequence; the hole transport layer is arranged on the anode side, and the electron transport layer is arranged on the cathode side; the light-emitting layer comprises a blue light fluorescent layer. According to the device, the color changing function is achieved through the proportion change of blue light internal emission and interface exciplex emission.

The present invention is formed of an AlGaN-based semiconductor in which an n-type semiconductor layer, an active layer, an electron blocking layer, a p-type semiconductor layer, and a p-electrode are sequentially laminated. The p-type semiconductor layer has: a first composition gradient layer which is formed on the electron blocking layer and in which the Al composition reduces toward the p-electrode; and a second composition gradient layer which is formed on the first composition gradient layer and in which the Al composition reduces toward the p-electrode. The interface between the first composition gradient layer and the second composition gradient layer has a heterojunction in which the Al composition is discontinuous. At the interface, the Al composition of the first composition gradient layer is more than the Al composition of the second composition gradient layer.