511results about How to "Efficient injection" patented technology

PCT No. PCT/CA96/00446 Sec. 371 Date Jun. 24, 1998 Sec. 102(e) Date Jun. 24, 1998 PCT Filed Jul. 3, 1996 PCT Pub. No. WO97/02605 PCT Pub. Date Jan. 23, 1997A flash E2PROM cell having source and drain regions disposed in a substrate, a channel region intermediate to the source and drain regions, a tunnel dielectric layer overlying the channel region, a floating gate overlying the tunnel dielectric layer, an inter-poly dielectric layer overlying the floating gate, and a control gate overlying the inter-poly dielectric layer. The flash E2PROM cell further having a highly doped p+ pocket implant covering a portion of the cell width and adjacent to at least one of the drain and source regions. The flash E2PROM cell is comprised of two sections butted together. The portion (width-wise) that is covered by the highly doped p+ pocket implant is referred to as a program section. The remaining portion (width-wise) not covered by the highly doped p+ pocket implant resembles a conventional flash E2PROM cell and is referred to as a sense section. The highly doped p+ pocket implant and the n+ drain and/or source regions create a junction having narrow depletion width so that when the junction is reversed biased, an electric field is created for generating hot electrons for storage on the floating gate, thereby programming the flash E2PROM cell when a high positive potential is applied to the control gate.

A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

A fuel injection system of an internal combustion engine has an injector that injects fuel into an intake system or a combustion chamber of an internal combustion engine, and a pressurizing device that pressurizes the fuel to a predetermined pressure. Further, the system has a first heating device that heats the fuel on an upstream side of the injector, and a second heating device that further heats the fuel heated by the first heating device. The second heating device is provided in the injector. Furthermore, the system has a control device that controls the second heating device to heat up the fuel heated by the first heating device to a predetermined temperature.

The invention provides vehicle-mounted repairing equipment for polluted site soil and underground water body, which comprises a dry powder hopper, a level meter, a feeding motor, a stirring machine, a mixing tank, a liquid level meter, a flowmeter, a magnetic valve, a tap water pipe, a liquid preparation feeding pipe, an eclectic cabinet, a touch screen operating system, an alarm, a plunger pump, a mixed liquid output pipe and a pressure meter. A repairing method comprises the steps of: adding a solid preparation into the dry powder hopper, adding the preparation into the mixing tank by using the feeding motor, introducing water or other solvent through a water inlet pipe, stirring by using the stirring machine to ensure that the solid preparation is fully dissolved in water or other solvents to prepare a repairing preparation with required concentration; or directly adding a liquid preparation into the mixing tank, introducing the water or other solvents through the water inlet pipe to ensure that the liquid preparation is diluted into the repairing preparation with the required concentration. Through automatically or manually starting the plunger pump, the repairing preparation is pressurized and injected into a polluted medium through the mixed liquid output pipe and reacts with pollutants in the medium, thus the purpose of efficient repairing is achieved.

The present invention proposes a capsule for containing beverage ingredients. The capsule includes a sealed ingredients compartment, an inlet face, an outlet face, and an opening member which is positioned at the inlet face outside the compartment and which is provided with piercing members directed towards the ingredients compartment.

An semi-solid mixture, such as a particulate meat mixture, is brought into contact with a vibrating surface, whereby energy is transported across the surface into the mixture. The vibration is generally contemplated to be in the ultrasonic frequency range, and the energy injection is contemplated to be sufficient to cause local physical and chemical changes in mixtures susceptible to such changes, and generally to cause changes in the direction of increased tensile strength and resistance to flow. In general a skin is formed on the mixture, and with greater processing efficiency then if such skin were formed by purely thermal means.

The invention discloses a quantum dot electroluminescent device and a preparation method thereof. The device comprises a first electrode layer, a second electrode layer as well as a hole injection layer, a hole transmission layer, an electron barrier layer, a quantum dot luminescent layer, a hole barrier layer and an electron transmission layer, wherein the hole injection layer, the hole transmission layer, the electron barrier layer, the quantum dot luminescent layer, the hole barrier layer and the electron transmission layer are sandwiched between the two electrode layers. The preparation method is characterized in that the electron barrier layer covers the hole transmission layer by utilizing a rotary coating method; the material of the electron barrier layer is preferably DNA-CTMA (deoxyribonucleic acid-cetyltrimethyl ammonium), thus the effective hole injection and efficient electron barrier are realized, and the device performances and luminescent color purity are improved greatly.

An omnidirectional building integrated wind energy power enhancer system is configured to produce electrical power from a wind turbine(s) concealed within and/or on top of a building by means of a flow of pressurized air from the prevailing wind that enters and flows through a portion of a building. A building may provide large exterior surface areas for receiving and directing airflow to the turbine(s). At least a portion of the wind energy power enhancer system is configured within a building, such as between floors, on a single floor, and/or a roof structure. The wind turbine(s) may be configured to receive airflow directly from an inflow chamber that is configured with a building, or from a flow tube coupled with the inflow chamber. Air deflectors may be fixed or dynamic to direct air flow into a flow tube regardless of the direction of the incoming airflow relative to the building.

The invention relates to a flexible organic light emitting transistor display device, which comprises a substrate (1), a source electrode layer (2a), a drain electrode layer (2b), a charge injection layer (3), organic semiconductor layers (4, 5 and 6), a gate insulating layer (7) and a gate electrode layer (8), wherein the source and drain electrode layers (2a and 2b) are made of graphene. The charge injection layer is added, a charge injection material is selected, the drain and source electrode layers are made of the graphene, so that the flexible active matrix organic light emitting transistor display device is transparent and high in aperture opening ratio and brightness, low in operating voltage and long in service life.

A light emitting component with organic layers, e.g., an organic light-emitting diode, which includes a substrate, at least one light emitting layer, and at least one charge carrier transport layer, having a cathode on the substrate and light emission through the anode. The light emitting component may further include a transport layer that is p-doped with an organic material.

There is provided compounds of formula I, ambipolar semiconductor material derived from such compounds and devices comprising such ambipolar semiconductor material.

[D_a-A_core-D_b-A_c-]_n  (I)

The invention relates to an organic light emitting diode with a double-layer electron transport layer and a preparation method thereof. The preparation method is characterized in that the double-layer electron transport layer is prepared by a solution method, namely, an ultra-thin acetylacetonate metal salt film is deposited on a light emitting layer of the device by the solution method first, and then a zinc oxide nano particle film is deposited on the ultra-thin acetylacetonate metal salt film by the solution method, thus realizing preparation of the double-layer electron transport layer through a full solution method. By adopting the method to prepare the electron transport layer of the organic light emitting diode, injection and transport of electrons in the device can be improved, charge transfer between the light emitting layer and the zinc oxide layer can be effectively inhibited, the device is enabled to get light emitting efficiency a hundred times higher than that of a conventional device, and the device has lower driving voltage and higher brightness. The method of the invention is widely used in the field of organic light emitting devices.

The present invention provides a memory element including a memory layer that holds information based on a magnetization state of a magnetic substance, and a magnetization pinned layer that is provided for the memory layer with intermediary of an intermediate layer therebetween, the intermediate layer being composed of an insulator. Spin-polarized electrons are injected in a layer-stacking direction to thereby change a direction of magnetization of the memory layer, so that information is recorded in the memory layer. At least one ferromagnetic layer included in the memory layer is composed mainly of CoFeTa, and has Ta content in a range from 1 atomic percent (at %) to 20 at %.

Embodiments of the present invention help to prevent leakage of low-density gas during low-density gas injection into a disk drive device and to perform low-density gas injection efficiently. In a hard disk drive (HDD) according to one embodiment of the present invention, an injection hole filter with a valve function is attached to a helium injection hole in order to inject helium gas in an enclosure. The injection hole filter has a valve member configured to operate in an open state or closed state. The open state is a state while the helium gas is being injected and the closed state is a state after the helium gas has been finished to be injected. The valve member is in the open state if the outside pressure is higher than the inside pressure and is in the closed state if the inside pressure is higher than the outside pressure.

The invention provides an electron blocking layer structure of a photoelectric device. The electron blocking layer structure is characterized in that structure matching between a quantum well and a P layer is achieved through adjusting a lattice structure and a band gap as much as possible; meanwhile, the formation of a polarized electric field is reduced, the formation of a negative charge area in an electron blocking layer is weakened as much as possible, and further the efficiency is improved; the electron leakage caused by energy band bending of the electron blocking layer and the increment of hole potential energy of the P layer are weakened. The electron blocking layer structure of the photoelectric device adopts AlInGaN or AlInGaN/InGaN super-lattice structure growth, wherein the In component is less than or equal to 10 percent; the Al component is less than or equal to 40 percent; the gradual distribution of the In component and the Al component exists in the electron blocking layer, and gradual change principles of the In component and the Al component are mutually independent; as for the electron blocking layer with an AlInGaN/InGaN super-lattice structure, the gradual change of the In component occurs in a super-lattice AlInGaN or a super-lattice AlInGaN/InGaN or in both the super-lattice AlInGaN and the super-lattice AlInGaN/InGaN.

The invention relates to an extensible oversize light-emitting diode (LED) chip which is characterized in that a buffer layer, an N-type doping layer, an active layer, a P-type doping layer and a current expanding layer which are laminated are formed on a substrate by epitaxial growth; a metal P electrode and a metal N electrode are formed by etching and depositing; a groove is formed between the P electrode and the N electrode by etching the chip; a reflecting layer is deposited on the side wall of the groove; and the reflecting layer is plated on the back of the substrate. The invention has the advantages that the groove etched on the chip can block the transverse transmission of light in the chip, the light extracting efficiency is improved, favorable current injection can be obtained, the chip is expanded to an oversize, and the manufacture process is simple.

A inject gas control device that performs, for example, control reflecting variation in vessel velocity over time without adversely affecting the main engine is realized. That is, it is prevented that gas is drawn too much and thereby a gas supply or charged air rate becomes insufficient, efficiency of the main engine is decreased and exhaust gas is deteriorated, and analogous events occur because the gas supply or charged air rate is too much instead.

There are provided a main engine 4010 acquiring propelling power for a vessel 1, and a turbocharger 4011 that is driven by exhaust gas from the main engine 4010 and blows pressurized gas to the main engine 4010. A part of the pressurized gas and/or exhaust gas is drawn from between the turbocharger 4011 and the main engine 4010 (5023, 5024 and 5025). The drawn pressurized gas and/or exhaust gas are injected in the proximity 9 of the hull on or below the waterline (5040), and the drawing rate of the pressurized gas and/or the exhaust gas is controlled on the basis of a physical quantity related to a heat load on the main engine 10 and characteristics of the turbocharger (4200).

A chemical injection system includes a pump in fluid communication with a chemical reservoir and a pipeline; a motor coupled to the pump and adapted to drive the pump to transfer a chemical fluid from the reservoir to the pipeline; a motor controller electrically coupled to a power module and the motor and adapted to adjust a rotational speed of the motor; and a central controller communicably coupled to the motor controller and a remote computing device. The controller includes a translator adapted to receive a signal from the remote computing device in a first communication protocol and translate the signal from the remote computing device to a command in a second communication protocol distinct from the first communication protocol, where the command is operable to adjust the motor controller to adjust the rotational speed of the motor.