12results about How to "Excellent Electrical" patented technology

The invention discloses a graphene copper composite wire and a preparation method thereof, relates to the technical field of composite material application, and aims to solve the problem of how to realize batch production in the graphene copper wire preparation process. The preparation method comprises the following steps: S1, taking graphene coated copper foil, cutting the graphene coated copper foil, laminating the graphene coated copper foil and putting the graphene coated copper foil into a vacuum hot pressing furnace, pressing the copper foil coated with the multiple layers of graphene into a graphene-copper composite block in a customized mold by using a hot pressing process; s2, the graphene copper composite block is rolled, and a graphene copper composite board is obtained; s3, the graphene copper composite board is subjected to cutting machining, and the graphene copper composite board is cut into graphene copper strips; and S4, cold drawing processing is carried out on the graphene copper bar, intermediate annealing is carried out in the cold drawing process, and therefore the graphene copper composite wire is obtained.

The embodiment of the invention discloses a high-strength corrosion-resistant CuNi10Fe1Mn alloy copper pipe and a preparation method thereof, relates to the technical field of non-ferrous metal material manufacturing, and aims to solve the technical problem of poor production in the prior art. According to the high-strength corrosion-resistant CuNi10Fe1Mn alloy copper pipe, the content of Ni ranges from 9.0% to 11.0%, the content of Fe ranges from 1.0% to 2.0%, the content of Mn ranges from 0.5% to 1.0%, the sum of impurity elements does not exceed 0.2%, and the balance is Cu.

The present invention relates to the technical field of energy materials, and discloses an organic solar cell and a heterogeneous interface control method thereof, comprising: blending ethoxy long-chain organic phosphoric acid and metal oxide nanoparticles in an organic solvent to obtain a basic solution; stirring the basic solution with an ultrasonic oscillator to obtain a nano solution; spin coating the nano solution on the surface of indium tin oxide of the organic solar cell to obtain a film; and subjecting the film to low-temperature annealing treatment. The organic solar cell proposed by the present invention can improve the chemical, electrical and electronic properties of the organic-inorganic heterogeneous interface, utilizes molybdenum oxide nanoparticles passivated by organic phosphoric acid, performs micro-environment control on the interface between metal nanoparticles and organic semiconductor materials, improves the separation and transfer efficiency of photogenerated charges of semiconductor materials, realizes the highest photoelectric conversion efficiency of organic solar cells using metal oxides as hole transport layers, and improves the photostability of organic solar cells.

The invention discloses a preparation method of a graphene copper-based composite material, and belongs to the technical field of copper-based composite materials. The method comprises the following steps: (1) carrying out surface pretreatment on a copper foil; (2) dropwise adding the graphene dispersion liquid on the surface of the copper foil, and drying the copper foil after the graphene dispersion liquid is freely diffused until the graphene dispersion liquid covers the surface of the copper foil; (3) stacking the copper foils in a manner that a graphene layer is arranged between two layers of copper foils, and then sequentially carrying out cold pressing and hot pressing to obtain a hot-pressed composite material; (4) annealing the hot-pressed composite material to obtain an annealed composite material; (5) carrying out cold rolling on the annealed composite material to obtain a rolled composite material; and (6) the rolled composite material is subjected to annealing treatment, and the graphene copper-based composite material is obtained. On the basis of simplifying the preparation process and reducing the preparation demand conditions, the graphene is promoted to effectively and fully exert the strengthening effect, and the comprehensive performance of the composite material in multiple aspects is improved.

The present invention relates to the technical field of saturable absorbers, and in particular to a saturable absorber based on tin oxide nanoparticles, a preparation method thereof, and a ring cavity fiber laser. The ring cavity fiber laser is composed of a pump source and a ring laser resonant cavity. The ring laser resonant cavity is composed of a wavelength division multiplexer, an erbium-doped optical fiber, a polarization light isolator, a saturable absorber, a polarization controller, and an optical splitter connected in sequence. The pump source is connected to the input end of the wavelength division multiplexer. The saturable absorber is a saturable absorber based on a mixture of tin oxide nanoparticles and a film-forming agent, or a saturable absorber based on tin oxide nanoparticles deposited on the surface of a tapered optical fiber, a D-type optical fiber, or a cladding-corroded optical fiber, or a saturable absorber based on tin oxide nanoparticles filled in the air hole cladding of a photonic crystal optical fiber. The present invention can provide a new solution for the development of ultrashort pulse fiber lasers.

The invention provides a drum type multi-temperature-zone vapor deposition growth and in-situ characterization cavity device. Comprising a drum-shaped cavity shell mounted on an X-ray experiment detection device, a plurality of air inlet pipelines inserted into the drum-shaped cavity shell, a platform-type central heating module arranged in the drum-shaped cavity shell, heating sleeve-type two-side heating modules and an experiment sample table arranged below the drum-shaped cavity shell, a sample growth substrate can be arranged on the central heating module, each gas inlet pipeline is connected with the corresponding heating modules on the two sides, and different gas inlet pipelines are used for introducing different precursors and transporting gas. According to the drum-type multi-temperature-zone vapor deposition growth and in-situ characterization cavity device disclosed by the invention, through unique drum-type cavity design and independent and accurate control of multiple heating modules, the growth quality of a two-dimensional semiconductor film is improved, and in-situ observation requirements of a film growth structure and mechanism in different working condition environments are met.

The invention relates to a laminated bending structure and a manufacturing method thereof, a confluence plate and a cylindrical battery, the laminated bending structure comprises m laminated film layers, the m film layers jointly form a first fixed section, a bending section and a second fixed section which are connected in sequence, the m film layers of the first fixed section and the second fixed section are relatively fixed, the m film layers of the bending section can move relatively, and the m film layers of the bending section can move relatively. In the bending state of the laminated bending structure, the bending section comprises a bending inner side and a bending outer side which are opposite to each other, the bending outer side is the outer surface of the laminated bending structure, in the direction from the bending inner side to the bending outer side, the length of the n film layer is smaller than that of the (n + 1) film layer, the (n + 1) film layer is closer to the bending outer side than the n film layer, m and n are positive integers, and m is larger than n. According to the laminated bending structure, the internal compression stress during bending of the multiple film layers can be fundamentally eliminated, inner layer wrinkling and stress concentration are avoided, the anti-fatigue performance of the structure under repeated bending is greatly improved, and the service life is remarkably prolonged.

The application relates to the technical field of graphene and discloses a graphene dispersion liquid preparation method based on ultrasonic assistance, which comprises the following steps: mixing graphene powder, a solvent, nano-silicon dioxide, a dispersion catalyst, a stabilizer and a reducing agent to form a preliminary mixture; pretreating the preliminary mixture with a surface modifier; applying ultrasonic treatment to the preliminary mixture for 5-60 minutes; filtering and centrifugally separating the mixture after the ultrasonic treatment, removing undispersed particles, and obtaining a graphene dispersion liquid with excellent stability and dispersion efficiency; by adding nano-silicon dioxide, the surface characteristics of the nano-silicon dioxide are used to enhance the space stability between graphene sheet layers, and the graphene sheet layers are prevented from re-agglomerating. The dispersion catalyst accelerates the dispersion process and improves the dispersion efficiency. The pretreatment step of the surface modifier significantly improves the affinity between the graphene and the solvent, and further promotes the uniform dispersion of the graphene.

The invention discloses a preparation method of a doped and wrapped film structure, and belongs to the technical field of film preparation. Comprising the following steps: S1, cleaning a substrate material and feeding the substrate material into a sputtering chamber; s2, taking a ZnS target and a ZnO target as sputtering target materials, and sequentially carrying out the following coating steps on the substrate by using magnetron sputtering equipment: (a) vacuumizing a sputtering chamber to 1.0 * 10 <-4 > Pa, and introducing argon to carry out pre-sputtering; (b) sputtering to form a first ZnS layer; (c) sputtering to form a ZnO layer; (d) performing co-sputtering of ZnS and ZnO to form a co-doped layer; (e) sputtering to form a second ZnS layer; and S3, placing the coated sample in an oxygen atmosphere, and carrying out high-temperature annealing treatment to obtain the doped and wrapped film structure. The preparation method is simple and controllable in preparation process, good in stability and suitable for the window layer of the efficient thin-film solar cell.

The invention discloses a high-selectivity terahertz metasurface biosensor based on a modified single-walled carbon nanotube film. The single-walled carbon nanotube metasurface layer is provided with a periodic opening resonance ring structure in an etched mode, is purified through strong acid, tip ultrasound, high-speed centrifugation, heat treatment and other schemes and is doped with gold nanoparticles from bottom to top in sequence. The invention also discloses an application of the high-selectivity terahertz metasurface biosensor based on the modified single-walled carbon nanotube film. The problems that in the prior art, a terahertz metasurface trace substance sensor is poor in modifiability, and high-selectivity sensing of trace substances cannot be achieved are solved.

The invention discloses an electric field-pressure field coupling driving membrane separation method for accurate separation of dye and salt and a separation device of the electric field-pressure field coupling driving membrane separation method, and belongs to the technical field of dye / salt membrane separation. The conductive substance polypyrrole endows the membrane with certain conductivity, and the selective separation performance of the composite membrane on small molecular organic matters / salts is improved by applying a constant electric field external force to assist in the membrane operation process. Meanwhile, after the membrane is electrified, due to repulsion of same electric properties, accumulation of dye pollutants on the surface of the membrane can be slowed down, the membrane pollution problem is relieved, and the membrane still keeps high water flux after long-time operation.

The application relates to a UTG-based solar cell substrate and a solar cell. The UTG-based solar cell substrate comprises a connecting layer, a first UTG substrate layer, a growth substrate layer and an epitaxial growth layer. The connecting layer is arranged on one side of the first UTG substrate layer. The growth substrate layer is arranged on the side, away from the connecting layer, of the first UTG substrate layer. The growth substrate layer comprises at least one of a copper layer, an iridium layer, a hexagonal boron nitride layer and a silicon carbide layer, and the epitaxial growth layer comprises a graphene layer arranged on the side, away from the first UTG substrate layer, of the growth substrate layer. The UTG substrate layer has excellent characteristics such as high light transmittance, high barrier property, atomic oxygen resistance, radiation resistance and bendability. The growth substrate layer has good heat conduction performance. The graphene layer can be epitaxially grown on the growth substrate layer easily, and the graphene layer has high infrared emission performance and high conductivity, can realize passive and efficient heat dissipation, avoid accumulation of static electricity, and prevent the internal circuit of the battery from being broken.