5results about How to "Excellent Electrical" patented technology

The invention discloses a preparation method of a graphene copper-based composite material, and belongs to the technical field of copper-based composite materials. The method comprises the following steps: (1) carrying out surface pretreatment on a copper foil; (2) dropwise adding the graphene dispersion liquid on the surface of the copper foil, and drying the copper foil after the graphene dispersion liquid is freely diffused until the graphene dispersion liquid covers the surface of the copper foil; (3) stacking the copper foils in a manner that a graphene layer is arranged between two layers of copper foils, and then sequentially carrying out cold pressing and hot pressing to obtain a hot-pressed composite material; (4) annealing the hot-pressed composite material to obtain an annealed composite material; (5) carrying out cold rolling on the annealed composite material to obtain a rolled composite material; and (6) the rolled composite material is subjected to annealing treatment, and the graphene copper-based composite material is obtained. On the basis of simplifying the preparation process and reducing the preparation demand conditions, the graphene is promoted to effectively and fully exert the strengthening effect, and the comprehensive performance of the composite material in multiple aspects is improved.

The invention relates to a laminated bending structure and a manufacturing method thereof, a confluence plate and a cylindrical battery, the laminated bending structure comprises m laminated film layers, the m film layers jointly form a first fixed section, a bending section and a second fixed section which are connected in sequence, the m film layers of the first fixed section and the second fixed section are relatively fixed, the m film layers of the bending section can move relatively, and the m film layers of the bending section can move relatively. In the bending state of the laminated bending structure, the bending section comprises a bending inner side and a bending outer side which are opposite to each other, the bending outer side is the outer surface of the laminated bending structure, in the direction from the bending inner side to the bending outer side, the length of the n film layer is smaller than that of the (n + 1) film layer, the (n + 1) film layer is closer to the bending outer side than the n film layer, m and n are positive integers, and m is larger than n. According to the laminated bending structure, the internal compression stress during bending of the multiple film layers can be fundamentally eliminated, inner layer wrinkling and stress concentration are avoided, the anti-fatigue performance of the structure under repeated bending is greatly improved, and the service life is remarkably prolonged.

The application relates to the technical field of graphene and discloses a graphene dispersion liquid preparation method based on ultrasonic assistance, which comprises the following steps: mixing graphene powder, a solvent, nano-silicon dioxide, a dispersion catalyst, a stabilizer and a reducing agent to form a preliminary mixture; pretreating the preliminary mixture with a surface modifier; applying ultrasonic treatment to the preliminary mixture for 5-60 minutes; filtering and centrifugally separating the mixture after the ultrasonic treatment, removing undispersed particles, and obtaining a graphene dispersion liquid with excellent stability and dispersion efficiency; by adding nano-silicon dioxide, the surface characteristics of the nano-silicon dioxide are used to enhance the space stability between graphene sheet layers, and the graphene sheet layers are prevented from re-agglomerating. The dispersion catalyst accelerates the dispersion process and improves the dispersion efficiency. The pretreatment step of the surface modifier significantly improves the affinity between the graphene and the solvent, and further promotes the uniform dispersion of the graphene.

The invention discloses a preparation method of a doped and wrapped film structure, and belongs to the technical field of film preparation. Comprising the following steps: S1, cleaning a substrate material and feeding the substrate material into a sputtering chamber; s2, taking a ZnS target and a ZnO target as sputtering target materials, and sequentially carrying out the following coating steps on the substrate by using magnetron sputtering equipment: (a) vacuumizing a sputtering chamber to 1.0 * 10 <-4 > Pa, and introducing argon to carry out pre-sputtering; (b) sputtering to form a first ZnS layer; (c) sputtering to form a ZnO layer; (d) performing co-sputtering of ZnS and ZnO to form a co-doped layer; (e) sputtering to form a second ZnS layer; and S3, placing the coated sample in an oxygen atmosphere, and carrying out high-temperature annealing treatment to obtain the doped and wrapped film structure. The preparation method is simple and controllable in preparation process, good in stability and suitable for the window layer of the efficient thin-film solar cell.

The application relates to a UTG-based solar cell substrate and a solar cell. The UTG-based solar cell substrate comprises a connecting layer, a first UTG substrate layer, a growth substrate layer and an epitaxial growth layer. The connecting layer is arranged on one side of the first UTG substrate layer. The growth substrate layer is arranged on the side, away from the connecting layer, of the first UTG substrate layer. The growth substrate layer comprises at least one of a copper layer, an iridium layer, a hexagonal boron nitride layer and a silicon carbide layer, and the epitaxial growth layer comprises a graphene layer arranged on the side, away from the first UTG substrate layer, of the growth substrate layer. The UTG substrate layer has excellent characteristics such as high light transmittance, high barrier property, atomic oxygen resistance, radiation resistance and bendability. The growth substrate layer has good heat conduction performance. The graphene layer can be epitaxially grown on the growth substrate layer easily, and the graphene layer has high infrared emission performance and high conductivity, can realize passive and efficient heat dissipation, avoid accumulation of static electricity, and prevent the internal circuit of the battery from being broken.