161 results about "Amorphous phase" patented technology

The invention discloses a silicon powder activity on-line dynamic monitoring method, which comprises the following steps: S1, on-line monitoring: monitoring characteristic parameters by using a plurality of spectrum detectors in the operation process of a fluidized bed; s2, parameter conversion: calculating intermediate parameters according to a parameter conversion formula by utilizing the characteristic parameters monitored in the step S1 in the online monitoring; and S3, activity calculation: calculating the real-time activity index of the silicon powder in the fluidized bed according to an activity calculation formula by using the intermediate parameters calculated in the step S2. The method has the advantages that the activity condition of the silicon powder in the fluidized bed can be accurately reflected in real time, and a scientific basis is provided for evaluating the activity of the silicon powder by accurately calculating key parameters such as a hydroxyl inhibition factor, an amorphous phase activity gain and a metal impurity inhibition factor; a regulation and control basis is provided for real-time regulation and control of the feeding proportion and the like of the fluidized bed, the production process is optimized, the product quality is improved, the production cost is reduced, and remarkable economic benefits are brought to enterprises.

A metal powder having a composition including the following elements, expressed in content by weight: 6.5%≤Si≤10%, 4.5%≤Nb≤10%, 0.2%≤B≤2.0%, 0.2%≤Cu≤2.0%, C≤2% and optionally containing Ni≤10 wt % and / or Co≤10 wt % and / or Cr≤7 wt % and / or Zr as a substitute for any part of Nb on a one-to-one basis and / or Mo as a substitute for any part of Nb on a one-to-one basis and / or P as a substitute for any part of Si on a one-to-one basis, the balance being Fe and unavoidable impurities resulting from the elaboration, the metal powder having a microstructure including at least 5% in area fraction of an amorphous phase, the balance being made of crystalline ferritic phases with a grain size below 20 μm and possible precipitates, the metal powder having a mean sphericity SPHT of at least 0.80.

The invention relates to a Bi19Br3S27-NiSX catalyst. In the Bi19Br3S27-NiSX catalyst, an amorphous phase NiSX is loaded on a crystal phase Bi19Br3S27. The preparation method of the catalyst comprises the following steps: taking bismuth salt and nickel salt as raw materials, dissolving the raw materials into ethylene glycol, and then adding a sulfur source and a bromine source to obtain a mixed solution; and carrying out solvothermal reaction on the mixed solution to obtain the Bi19Br3S27-NiSX catalyst. The invention relates to a Bi19Br3S27-NiSX catalyst which is applied to production of ethylene through photo-thermal CO2 reduction. The catalyst has the beneficial effects that the catalyst has excellent sunlight full-spectrum light absorption property and photo-thermal conversion capacity, the surface activity of the catalyst is remarkably improved through introduction of the NiSX amorphous phase, the electron transfer efficiency in catalytic reaction is enhanced, the light energy utilization efficiency is improved through the synergistic effect of the multi-component catalyst, and CO2 is subjected to high-selectivity catalytic reduction to produce ethylene.

The invention provides an iron-tin co-doped amorphous gallium oxide-based ferromagnetic ceramic film, and belongs to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: sufficiently mixing Ga, Fe and Sn organic precursor solutions according to a certain proportion to form a GaFeSn organic precursor solution; the cleaned single crystal aluminum oxide substrate is coated with the GaFeSn organic precursor solution in a spinning mode; then putting the obtained GaFeSn organic precursor film into a tube furnace with a single temperature zone; under the air atmosphere, the temperature of the tubular furnace is slowly increased to 550 DEG C at the speed of 5 DEG C / min, heat preservation is carried out for 1 h at the temperature of 550 DEG C, annealing treatment is carried out, and the amorphous GaFeSnO magnetic ceramic film which is uniform in thickness and has the amorphous phase and strong ferromagnetism is prepared. Strong ferromagnetism of the thin film is excited with low iron element doping concentration (10%), and the problem of low conductivity caused by transition metal doping in the magnetic ceramic thin film is solved. The amorphous GaFeSnO magnetic ceramic film prepared by the method has strong ferromagnetism of 170 emu / cm < 3 > under 2K and 90 emu / cm < 3 > under 300K, and the Curie temperature of 335K.

The present application relates to a coating and a method for preparing the coating. The coating comprises a first amorphous phase coating, a second amorphous phase coating, a third crystalline phase coating and a fourth amorphous phase coating arranged in sequence from a substrate. The method comprises the following steps: forming the first amorphous phase coating on the substrate by using a first laser-induced pulse arc source process; forming the second amorphous phase coating on the first amorphous phase coating by using a second laser-induced pulse arc source process; forming the third crystalline phase coating on the second amorphous phase coating by using a direct current arc source process; and forming the fourth amorphous phase coating on the third crystalline phase coating by using a third laser-induced pulse arc source process, wherein the first laser-induced pulse arc source process, the second laser-induced pulse arc source process and the third laser-induced pulse arc source process all use a laser-induced pulse arc source process.

The phase structure evolution phase field analysis method in the annealing and crystallization process of the amorphous hafnium oxide-based ferroelectric film comprises the following steps: S1, setting a sequence parameter xi according to the evolution process from an amorphous phase to a crystal phase in the annealing process, and setting a sequence parameter eta according to the process of the crystal phase and the crystal phase; s2, a phase field theoretical model is established, the total free energy is the sum of the free energy of the sequence parameter xi and the free energy of the sequence parameter eta, and the free density in the free energy of the sequence parameter eta is obtained through coupling of the sequence parameter xi and the sequence parameter eta; s3, deducing a weak form of the control equation; and S4, compiling the weak form equation into COMSOL finite element software, solving and analyzing the phase structure in the annealing crystallization process of the thin film. According to the method, the sequence parameter xi representing the transformation process from the amorphous phase to the crystalline phase is introduced and coupled with the sequence parameter eta to construct a new free energy equation and a new control equation, the weak form of the control equation is deduced, and the phase structure and the evolution rule of the hafnium oxide-based ferroelectric film at different annealing moments can be dynamically reproduced.

The invention discloses a high-corrosion-resistance coating material with a high-entropy effect and an amorphous effect and a preparation method of the high-corrosion-resistance coating material, and belongs to the technical field of surface engineering and functional materials. The high-entropy amorphous alloy powder comprises the following alloy raw materials: 21-22 wt% of Fe; % of Co: 22 to 25 wt. % of Cr: 19 to 20 wt.%; % of Mo: 18 to 19 wt.%; % of Ni: 11 to 12 wt.%; % of B: 1.5 to 3.0 wt.%; %, Si: 2.0 to 4.5 wt.%. According to the high-corrosion-resistance coating material with the high-entropy effect and the amorphous effect, the porosity of the coating material is 3.2% or below, the amorphous phase content is 85% or above, and the average microhardness reaches 1120-1180 HV 0.1. The coating provided by the invention shows lower corrosion current, wider passivation interval and higher hardness in a corrosive medium, and is suitable for long-term protection of ocean, aviation and energy equipment.

This invention relates to the field of solid-state battery technology, and particularly to a composite solid-state electrolyte material, its preparation method, and its application. The composite solid-state electrolyte material contains a crystalline phase substance with the general chemical formula: B%A a RE b X 1 c D g +C%A d M e X 2 f D h Where A represents charge carriers; RE represents rare earth elements; M represents metallic elements; X represents... 1 X 2 D is a halide anion; A is an anion doping element or group; a RE b X 1 c D g and A d M e X 2 f D h It is a crystalline phase substance; B% is A a RE b X 1 c D g The mass fraction of the composite solid electrolyte material; C% is A d M e X 2 f D h The mass fraction of the composite solid electrolyte material is defined as follows: 0 ≤ a ≤ 3, 0 < b ≤ 1, 0.5 < c ≤ 12, 0 < d ≤ 5, 0 < e ≤ 2, 1 < f ≤ 20, 0 ≤ g ≤ 4, 0 ≤ h ≤ 5; 85 < B + C < 98, 10% < B% ≤ 85%; 10% < C% ≤ 85%, 0.2 ≤ C / B ≤ 10. The composite solid electrolyte material of this invention includes crystalline and amorphous phase components, giving it high ionic conductivity. The use of moisture-resistant non-metallic halide components instead of traditional halides and oxyhalides in the raw materials also provides it with good air stability.

To provide a halogen-based compound capable of exhibiting high ionic conductivity and enabling visual checking of the mixing state of an additive when a dark-colored additive is incorporated.SOLUTION: There is provided a compound that satisfies formula (1) and has a mass fraction of an amorphous phase of 10% or more, wherein in formula (1), α and β are each independently a value greater than 0, γ is a value of 0 or more and less than 6, D represents an alkali metal element, M includes an element serving as a metal cation other than alkali metal elements, X represents a halogen element, and A represents an atomic group serving as a polyatomic anion containing two or more elements. Formula (1): DαMβX6-γAγ.SELECTED DRAWING: None

To provide an iron-based soft magnetic alloy that possesses Bs≥1.7 T, exhibits low iron loss characteristics, and enables lamination core formation.SOLUTION: An iron-based soft magnetic alloy has a composition expressed by the formula (Fe1-mCom)100-x-ySix(B1-nCn)y, in which the composition ratios x, y, m, and n satisfy 1.0≤x≤3.0 atom%, 11.0≤y≤14.0 atom%, 0.05≤m≤0.5, and 0.0≤n≤0.3. The alloy has a metal structure composed of an α-Fe phase, with an amorphous phase of 20 vol.% or less, a saturation magnetic flux density of 1.7 T or more and 2.0 T or less, and an iron loss of 50 W / kg or less at a magnetic flux density of 1.5 T and a frequency of 1 kHz, wherein the thickness of the iron-based soft magnetic alloy is 18 μm or more and less than 40 μm.SELECTED DRAWING: Figure 2

The invention relates to the technical field of coated cutting tools, and provides a high-temperature wear-resistant coated cutting tool and a preparation method thereof.The high-temperature wear-resistant coated cutting tool comprises a base body and a high-temperature wear-resistant coating, and the base body is coated with the high-temperature wear-resistant coating; the matrix is a WC-based hard alloy; the coating comprises a WaAlbSicB2 bonding layer and a Ti < x > Al < y > Si < z > B2 functional layer from inside to outside, wherein the Ti < x > Al < y > Si < z > B < 2 > functional layer is of a columnar crystal layer-equiaxed crystal layer alternating structure and has a grain size, amorphous phase proportion and Al / Si element triple gradient structure in the thickness direction. A double-peak structure design is adopted in the matrix, namely coarse-grain WC constructs a framework, fine-grain WC fills gaps, and the strength and the toughness are synergistically improved through the double-peak structure design; and meanwhile, the micro-texture array is arranged on the surface of the substrate, so that the coating and the substrate form mechanical interlocking, and the film-substrate bonding strength is remarkably enhanced. The cutter has good wear resistance, good toughness, excellent film-substrate bonding strength and good high-temperature oxidation resistance, and is suitable for high-speed cutting of difficult-to-machine materials such as titanium alloy and nickel-based high-temperature alloy.

The magnetic element of the present embodiment includes a wiring layer and a first ferromagnetic layer in contact with the wiring layer, and the wiring layer includes a first layer of a crystal phase and a second layer of an amorphous phase between the first ferromagnetic layer and the first layer.

The invention discloses a cobalt hydroxide electrode, the cobalt hydroxide electrode is cobalt hydroxide loaded by foamed nickel, the cobalt hydroxide is amorphous phase cobalt hydroxide, and the microstructure of the cobalt hydroxide is a nanoneedle. The electrode obtained by the invention has the characteristics of relatively high catalytic activity and relatively strong reaction kinetics. The invention further discloses a preparation method and application of the cobalt hydroxide electrode.

The solid electrolyte has: first crystallites formed on primary particles and having a first crystal structure; a second crystallite formed in the same primary particle as the first crystallite and having a second crystal structure different from the first crystal structure; and an amorphous phase, the first crystallites and the second crystallites each contain lithium, the first crystal structure is a hexagonal crystal, the second crystal structure is an orthorhombic crystal, and both the crystallite size of the first crystallites and the crystallite size of the second crystallites are 50 nm or less.

The application discloses CaTiSiO5 glass and a preparation method and application thereof. The preparation method comprises the following steps: under a container-free gas suspension condition, a CaTiSiO5 ceramic preform is melted by using a laser to obtain a CaTiSiO5 melt; and the CaTiSiO5 melt is cooled to room temperature after being kept for a period of time, so that CaTiSiO5 glass is obtained. The CaTiSiO5 glass with a metastable amorphous phase is prepared from the CaTiSiO5 ceramic, the ion release rate and the in-vitro biological activity are improved, so that the prepared new CaTiSiO5 glass can provide a suitable ion release rate and a weak alkaline pH environment, and promote bone tissue repair.

Provided is a laminated structure in which epitaxial growth of a functional thin film can be achieved, problems such as interlayer peeling can be suppressed, and crack progression of the functional thin film can be suppressed. This laminated structure is provided with: a substrate, at least the surface of which is composed of a single crystal; a crystalline orientation control film that contains zirconium oxide (ZrO2) as a main component provided on the single crystal surface of the substrate; and a functional thin film provided on the crystalline orientation control film. The liquid crystal display device is further provided with a buffer layer containing a mixed phase of a crystalline phase and an amorphous phase, and the buffer layer is interposed between the substrate and the orientation control film. In addition, the crack penetration degree is 80% or less as determined by the ratio of the depth of the crack in the vertical direction to the film thickness of the functional film.

To provide silicate glass excellent in chemical durability and having low surface resistivity, and to provide a method for producing the same.SOLUTION: A glass ceramic, comprising a crystalline phase and an amorphous phase, wherein the glass ceramic comprises SiO2, RO, and oxides of an element X, wherein the RO represents oxides of an element R; The element R is one or more elements selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, the element X is one or more elements selected from the group consisting of Nb, Ti, Sn, Ta, W, and Ce, the crystal phase includes one or more crystals containing Si as a constituent element, A value represented by a formula (1a): {(total content ratio of the element X in the amorphous phase) / (total content ratio of the element X in the base glass) * 100} using a total content ratio of the element X in the amorphous phase and a total content ratio of the element X in the base glass of the crystallized glass is more than 100.SELECTED DRAWING: Figure 1

An object holder configured to support an object is provided, the object holder including a support surface having a plurality of support elements, where the plurality of support elements includes a reversible change crystalline / amorphous phase material configured to provide a selective change height of the individual support elements. Also provided are a stage comprising such an object holder, an apparatus for controlling the flatness of a surface comprising such an object holder, a lithographic apparatus or tool comprising such an object holder, a method of controlling the shape of a surface, a method of manufacturing an object holder, and a lithographic apparatus or tool comprising such an object holder. And the use of such an apparatus or method in a lithographic apparatus or process.

The invention relates to the technical field of inorganic materials, in particular to low-dielectric SiOC ceramic powder as well as a preparation method and application thereof. The low-dielectric SiOC ceramic powder provided by the invention has low dielectric property and high insulativity, the dielectric loss tangent value is less than 0.0010, the surface resistance is more than 4 * 10 < 14 > ohm, the volume resistance is more than 5 * 10 < 12 > ohm, the conductivity Ec is less than 10 [mu] S / cm, the crystal form of the low-dielectric SiOC ceramic powder is an amorphous phase and has no carbon crystal peak, the whiteness is less than 5%, and the density is greater than or equal to 2.0 g / cm < 3 >. The prepared low-dielectric SiOC ceramic powder has the low dielectric property and high insulativity, the crystal form of the low-dielectric SiOC ceramic powder is an amorphous phase and has no carbon crystal peak, and the evaluation result of the embodiment meets the requirements of the low-dielectric SiOC ceramic powder for high-frequency and high-speed circuits, packaging and other electronic-grade scenes.

The invention relates to a solid electrolyte material for a sodium ion battery and a preparation method, and the preparation method comprises the following steps: building a structure-conductivity correlation model of a Na-Hf-Zr-Si-P-O multi-element system by using computer simulation, and providing an optimal molar ratio interval of a sodium source, a hafnium-containing source, a zirconium-containing source, a silicon-containing source and a phosphorus-containing source through algorithm iteration; weighing each source and primarily mixing in a dry environment; carrying out ball milling to form a uniform nanoscale pre-reaction body; carrying out low-temperature calcination on the pre-reaction body in an oxidizing atmosphere to generate a crystal nucleus and remove amorphous phase impurities; and carrying out compression molding on the low-temperature calcined product, carrying out high-temperature sintering, and continuously growing by using the formed crystal nucleus to finally obtain the compact and pure-phase solid electrolyte sheet. Compared with the prior art, the method has the advantages that high-phase-purity, low-grain-boundary-resistance and large-scale preparation can be realized on the premise that rare earth doping is not needed by a computer simulation-solid-phase reaction integrated method, so that a common bottle exposed in the prior art is effectively overcome.

The present invention relates to a positive electrode active material and a lithium secondary battery comprising the same, and more particularly, to a positive electrode active material comprising a overlithiated lithium manganese-based oxide, wherein a coating layer comprising a crystalline phase and an amorphous phase is formed on the surface of the lithium manganese-based oxide, thereby alleviating elution of transition metals from the lithium manganese-based oxide and suppressing side reactions on the surface of the lithium manganese-based oxide, and to a lithium secondary battery comprising the same.

A glass frit includes a glass which contains: Li; at least one selected from the group consisting of B, Si, P, Ge, and Te; O; and at least one selected from the group consisting of F, Cl, Br, and I. The glass is to turn into a crystallized glass including an amorphous phase and a crystalline phase, the crystalline phase precipitated by a heat treatment at a temperature equal to or higher than a glass transition temperature and equal to or lower than a glass crystallization temperature. The crystallized glass shows diffraction peaks at 2θ=22.8±0.5°, 2θ=32.1±0.5° and 2θ=39.6±0.5° in a powder X-ray diffraction pattern using Cu-Kα radiation.

This invention discloses a biomimetic corrugated layered Fe-based amorphous composite coating, its preparation method, and its application, belonging to the fields of materials science and surface engineering technology. The biomimetic corrugated layered Fe-based amorphous composite coating has a periodically staggered corrugated layered structure along its thickness direction, consisting of alternating TiNx-rich layers and amorphous-rich layers; each layer has a transition layer with a thickness of 20-40 μm between it and the others; the total coating thickness is 300-400 μm; the thickness of the TiNx-rich layer is 50-80 μm; in the TiNx-rich layer, the TiNx reinforcing phase is uniformly distributed with a particle size between 50-200 nm; the thickness of the amorphous-rich layer is 80-120 μm. This invention achieves natural stratification and interfacial synergy between the amorphous phase and the TiNx phase in the thickness direction by controlling the powder particle size distribution, spraying distance, plasma hydrodynamic parameters, and additive atmosphere, forming a composite coating with a significant crack-blocking effect.

The invention discloses a high-stability large-window all-optical phase change brain-like computing material and device. The device structurally comprises a substrate, an optical waveguide layer, a dielectric layer, a phase change layer and a top anti-oxidation layer in sequence from bottom to top, the device phase change layer is made of germanium-enriched germanium-antimony-tellurium phase change materials, the chemical formula is GexSbyTez, x is larger than or equal to 25 and smaller than or equal to 50, y is larger than or equal to 15 and smaller than or equal to 25, and z is larger than or equal to 30 and smaller than or equal to 50. The phase change material has the advantages of high crystallization temperature, good amorphous thermal stability, large optical property difference between amorphous phases and crystalline phases, large switching ratio of the device, and excellent cycle stability.

The present invention pertains to a crystallized glass which has a crystal phase and an amorphous phase. The composition of the crystallized glass includes, as indicated in oxide-based mole percentage, 55-70% of SiO2, 15-27.0% of Li2O, 0.1-2.6% of Al2O3, 0.5-5% of P2O5, and 0.5-2.6% of ZrO2. The content proportion of the crystal phase in the crystallized glass is 50-85 mass%. The crystal phase contains Li2Si2O5 crystals. The content proportion of the Li2Si2O5 crystals in the crystal phase is not less than 80 mass%.

The application provides a method for characterizing amorphous phase in a geopolymer precursor material, which comprises the following steps: firstly, determining a time period (i.e. t1-t2) in which the crystal phase of the geopolymer precursor material is least dissolved in acidolysis; then, performing acidolysis in the time period; and finally, analyzing and comparing filtrates or residues under the acidolysis time t1 and t2, so as to accurately characterize the composition and structure information of the amorphous phase in the geopolymer precursor material. In the method, the mass loss of the geopolymer precursor material after acidolysis is introduced to obtain the solubility of the precursor material under different acidolysis time; then, the amorphous phase content in the geopolymer precursor material after acidolysis under each acidolysis time and the amorphous phase content in the precursor material before acidolysis are determined, so as to obtain the difference between the amorphous phase content in the geopolymer precursor material before acidolysis and under different acidolysis time, and the quantitative results of the dissolved amorphous phase and crystal phase under different acidolysis time are obtained.

Method and device for processing multidimensional representative microscopy data of a material sample to map a mixture of amorphous and crystalline phases in the material sample. This processing device includes modules for: denoising (18) a multidimensional input microscopy data block by applying a filter; normalizing (20) the denoised data block to obtain a normalized data block, the normalization including an adjustment of a local contrast of the denoised data block between a predetermined minimum and maximum value; smoothing (20) the denoised data block before or after normalization;in at least a subset of points of said normalized data block, calculation of a structure tensor (22) as a function of the values ​​of directional gradients, around each point of said subset of the normalized data block, and calculation (24) of at least one map (25, 27, 29) of the amorphous and crystalline phases of the observed material sample as a function of at least one characteristic of the calculated structure tensors. Figure for the abstract: Figure 2;

This invention discloses a phase change memory material, device, and in-memory computing array with wide temperature range and low resistance drift. The phase change memory material contains chromium (Cr) and tellurium (Te), with the chemical formula Cr. x Te 100‑x Where 0 < x < 100; the resistivity drift coefficients of both the amorphous and crystalline thin films of the phase change memory material are ≤0.002 in the temperature range of -200 to 200℃. The local structure of the amorphous phase of the phase change memory material of the present invention is mainly octahedral, without obvious Pell's distortion, and can maintain an ultra-low resistivity drift coefficient over a wide temperature range, overcoming the resistivity drift problem in existing phase change memory technologies, especially the problem of complicated resistivity drift behavior under wide temperature range operating conditions.

The application discloses a preparation method and application of high-stability lead-free halide core-shell nanocrystals and belongs to the field of semiconductor material preparation. The nanocrystal core layer is and the shell layer is an in-situ grown anatase phase / amorphous phase. Tetrabutyl titanate is used as a single titanium source, and one-step coating is carried out through precursor solution preparation-titanium source in-situ hydrolysis-anti-solvent induction-post treatment. Optionally, a chelating agent can be introduced to passivate defects, and a polymer+inorganic dense layer double-coating can be used to strengthen the stability. The oxygen-free preparation conditions are optimized, and one or mixed halogen nanocrystals can be prepared by passing nitrogen gas throughout the whole process, so that the problems of poor water oxygen and thermal stability of traditional nanocrystals are solved. In-situ coating forms an interface bonding, and the fluorescence retention rate is greater than or equal to 80% in air for three months, and the Cl / Br phase can reach greater than or equal to 90%. The process is simple and easy to scale, and the material can be widely applied to the fields of photocatalysis, flexible X-ray imaging, LED, photoelectric detection and the like, and has significant academic and industrial application values.

The invention discloses a tunnel phase manganese-based positive electrode material of a sodium ion battery with Na0. 44MnO2 coated with amorphous phase Na2B4O7 and a preparation method of the tunnel phase manganese-based positive electrode material. The method comprises the following steps: mixing Na2B4O7 and Na0. 44MnO2 according to a mass ratio of 1%-4%, fully grinding, transferring into a beaker, adding ethanol, stirring for 4-6 hours, drying, grinding again, finally transferring into a muffle furnace, and carrying out solid-phase sintering at 300-500 DEG C to obtain the Na2B4O7-coated tunnel-phase manganese-based positive electrode material. On the basis that the original structure of the material is not damaged, an amorphous phase uniform protection layer with the thickness of several nanometers is deposited on the surface of the material, direct contact between the positive electrode material and an electrolyte is isolated, meanwhile, the material can better adapt to volume change in the sodion deintercalation process, structural degradation is slowed down, and the cycling stability of the material is improved.