1 results about "Equivalent oxide thickness" patented technology

An Equivalent oxide thickness is a distance, usually given in nanometers (nm), which indicates how thick a silicon oxide film would need to be to produce the same effect as the high-κ material being used. The term is often used when describing field effect transistors which rely on an electrically insulating pad of material between a gate and a doped semiconducting region. Device performance has typically been improved by reducing the thickness of a silicon oxide insulating pad.