The invention discloses a method for manufacturing an insulated gate bipolar transistor (IGBT) component combined with a fast recovery diode (FRD). The method comprises the steps of defining exposure of a trench gate, growing and doping N-type polycrystalline silicon, etching the polycrystalline gate, conducting injection and drive-in to a source and a P trap in the front, reducing silicon slices at the back, conducting the phosphonium ion injection at the back, conducting the phosphonium ion drive-in at the back under a high temperature and for a long time at the back, digging a groove at the back, growing and highly doping N-type polycrystalline silicon in the groove at the back, conducting the collector electrode B injection at the back, and conducting the collector electrode B drive-in and the collector electrode gold evaporation. The IGBT component manufacturing method has a larger substrate concentration of the IGBT component and a lower cost than the prior art. The PNP base width of the IGBT combined with the fast recovery diode is smaller than that of a common IGBT, on-state resistance is smaller, generated joule heat is smaller, dropping detention time is shorter and bearable short-circuit current is larger under the same voltage during off-state.