The invention discloses an enhancement mode planar insulated gate bipolar transistor (IGBT), belonging to the technical field of semiconductor power devices, wherein a hole bypass structure consisting of a P+ body region and a trench-type metallization emitter is introduced based on the traditional enhancement mode planar IGBT; and on the basis of the traditional non-through type planar IGBT, a JFET(Junction Field Effect Transistor) effect weakening structure consisting of an N type hole potential barrier layer and an N- draft region is introduced, and a path structure of expanded current formed by the N type hole potential barrier layer is introduced. Through the N type hole potential barrier layer, the conductivity modulation effect of one side of a device near the emitter can be enlarged, the JFET effect is reduced, the area flown through by electronic current is increased, therefore the on-state voltage drop is lowered; through the trench-type hole bypass structure, the current density of a latch can be increased, hole extraction is accelerated, and then the shutoff speed is enhanced; in addition, the area of an exhaustion region is increased by the P+ body region, thus the breakdown voltage is also increased; and the resistance of the device can be further lowered by the trench-type metallization emitter, thus the on-state voltage drop is reduced.