108results about How to "Reduce forward voltage drop" patented technology

The invention relates to a carrier-storing grooved gate IGBT with a P-type floating layer, belonging to the technical field of semiconductor power devices. On a basis of the prior carrier-storing grooved gate bipolar transistor, a P-type floating layer (13) is introduced to almost free a carrier-storing layer from bearing a withstanding voltage and decrease a forward conducted voltage drop; and the P-type floating layer (13) also improves the electric-field integration effect of the bottom of the grooved gate, thereby effectively decreasing an electric filed with a maximum peak value, preventing the bottom of the grooved gate and the vicinity of the high-concentration carrier-storing layer from being broken down by an overhigh electric field and greatly increasing the breakdown voltage of the device. A JFET zone is introduced due to the existence of the P-type floating layer. When the device is forwardly conducted, the resistance of the JFET zone continuously increases along with the continuously increasing voltage of a collector so that the saturation current of the device is decreased, and a lower conducted voltage drop is obtained while maintaining a greater short-circuit safety operation area (SCSOA).

The invention relates to a grooved semiconductor rectifier and a manufacturing method thereof. The grooved semiconductor rectifier comprises a semiconductor baseplate, a first conduction type substrate and a first conduction type drift region, wherein one or more grooves extend from the first main plane to the first conduction type drift region, one or more mesa parts are limited at the upper part of the first conduction type drift region, and the upper part of the mesa part is provided with a first conduction type injection layer; the inner wall of the groove is covered with an insulation oxide layer, and a first electrode is deposited in the groove covered with the insulation oxide layer; the first conduction type drift region is provided with a second conduction type enclosure layer corresponding to the bottom of the groove, and the bottom of the groove is coated by the second conduction type enclosure layer; a first metal layer corresponding to the upper part of the first plane is deposited on the semiconductor baseplate; and the second plane of the semiconductor baseplate is covered with a second metal layer. The invention has the advantage of low manufacturing cost, and reduces the reverse leakage current and the forward conduction voltage drop of the Schottky rectifier.

The invention discloses a high-performance rectifier diode replaced circuit which comprises a capacitor, a low-voltage clock generator, a charge pump circuit, a band-gap reference circuit, a hysteresis comparator, a driving amplifier and a power metal oxide semiconductor (MOS) pipe and is characterized in that the low-voltage clock generator detects voltages at two ends of a diode pipe and generates clock signals to drive the charge pump circuit; the charge pump circuit detects the voltages at two ends of the diode pipe and stores the charges in the capacitor after the charges are amplified; the voltage stored on the capacitor and the standard voltage output by the band-gap reference circuit are respectively output to the hysteresis comparator for comparison; and when the voltage stored in the capacitor is larger than the standard voltage output by the band-gap reference circuit, the hysteresis comparator outputs starting signals which are amplified by the driving amplifier and then output to the power MOS pipe to drive the power MOS pipe to be conducted. The high-performance rectifier diode replaced circuit can achieve equivalent diode working characteristics through a pulse working mode and can totally replace original selective beacon radar (SBR) devices in performance and dimension.

The invention provides an SOI-RC-LIGBT device and a preparation method thereof. The SOI-RC-LIGBT device comprises an N-type substrate, a buried oxide layer, an N-type drift region, a trench gate structure, a P-type base region, an N+ source region, a P+ contact region, an emitting electrode, an oxide layer, an N-type buffer region and a P-type collector region; an N-type strip is arranged on the surface of the portion, between the P-type base region and the N-type buffer region, of the N-type drift region, and a P-type buried layer is arranged in the portion, below the N-type strip, of the drift region; a medium trench structure is arranged between the right sides of the N-type strip and the P-type buried layer and the left sides of the N-type buffer region and the P-type collector region;an N+ collector region is arranged between the N-type strip and the medium trench structure. According to the SOI-RC-LIGBT device, while the IGBT conduction characteristic snapback phenomena are eliminated, the breakdown voltage of the device is improved, the forward conduction voltage drop of the device is reduced, the shutoff speed is increased, the shutoff loss is reduced, and meanwhile, the reverse recovery characteristics of an integrated free-wheeling diode are improved.

The invention belongs to the technical field of semiconductor power devices, and particularly discloses an IGBT (Insulated Gate Bipolar Transistor) power device. The device comprises: a p-type collector region; an n-type field stop region located on the p-type collector region; an n-type drift region located on the n-type field stop region; a plurality of first grooves, a second groove is arrangedat the lower portion of each first groove; gate structures located in the first grooves and the second grooves; p-type body regions located between adjacent first grooves; n-type emitter regions located in the p-type body regions; and n-type hole charge barrier regions located between the n-type drift region and the p-type body regions. The position of the electric field peak value of the IGBT power device in the reverse bias state can be regulated to allow the IGBT power device to have the smaller forward conduction voltage drop and the shorter turn-off time under the same breakdown voltage.

The invention provides an insulated gate bipolar translator (IGBT) with a back reinforcing structure, and belongs to the transistor structure field. The uniform P+ typed collector regions of the traditional IGBT provided by the invention are changed into convex and concave structures, and the surfaces for contacting the P+ typed collector regions with N- typed shift regions are of convex and concave structures; the corresponding P+ typed collector regions and the collectors are also of convex and concave structures. In addition, the invention further discloses a fabrication method of IGBT with the back reinforcing structure. In the invention, as the surfaces of IGBT for contacting the N- typed shift regions and the P+ typed collector regions are of convex and concave structures, and the corresponding P+ typed collector regions and the collectors are also of convex and concave structures, the sizes of P and N junctions in the collector regions are enlarged and the purpose of reducing the positive connection voltage drop is achieved.

The invention relates to an RC-IGBT device and belongs to the technical field of power semi-conductor devices. Variable-component mixed crystals are used for producing a collector region of the IGBT to form an energy band structure with gradually variable forbidden bandwidth. The forbidden bandwidth is small at the junction of the collector region and a drift region, built-in electrical potentials of the collector region and the drift region are reduced, and the phenomenon of snap-back is relieved; meanwhile, the gradually variable forbidden bandwidth is formed due to the variable-component materials of the collector region, and a retarding field of minority carriers is generated in the collector region, so that injection of the minority carriers to the collector region by the drift region is reduced, the injection efficiency of the collector region to the drift region is improved, the strong conductivity modulation effect can be obtained, and the forward conducting voltage drop of the IGBT is reduced.

The invention discloses a piezoelectric energy collection rectifier for open-circuit type optimization of turnover time. The piezoelectric energy collection rectifier comprises two active diodes, two switches, an inductor and a peak detection and digital circuit control module, wherein a pair of active diodes carries out complementary conduction/stop operation; once one diode detects a zero crossing point flowing through a current from a positive electrode to a negative electrode, the diode is turned off and opposite the other diode is turned on; each active diode outputs a corresponding on-off state signal; the peak detection and digital circuit control module receives the on-off state signal of each active diode, detects a voltage peak of a cathode of the active diode and outputs a pulse signal of the optimized pulse width; the two switches receive the pulse signal of the peak detection and digital circuit control module and carry out on/off operation; and the inductor is connected with a piezoelectric device in series, and is connected to an input end of the rectifier. Under the control of the peak detection and digital circuit control module, the capacitor voltage of the piezoelectric device is optimally turned over; and meanwhile, the energy is transmitted to a load.

The invention discloses an insulated gate bipolar translator (IGBT) device with two short-circuit positive electrodes, and belongs to the technical field of semiconductor power devices. A positive electrode structure of the device is a two-positive-electrode short-circuit structure. The IGBT device comprises a first P+ hole emission layer, a second P+ hole emission layer, a metal collector and a silicon dioxide barrier layer, wherein the silicon dioxide barrier layer is positioned on the back face of the first P+ hole emission layer; the metal collector is positioned on the side face of the first P+ hole emission layer and below the second P+ hole emission layer, and the two P+ hole emission layers are contacted with each other; the second P+ hole emission layer is positioned at the bottom of an N- drift region and staggered in parallel with the first P+ hole emission layer; and an electronic trench is formed between the first P+ hole emission layer and the second P+ hole emission layer. The positive electrode structure of the IGBT device is improved, so that the hole injection efficiency is improved, the current carrier concentration distribution in the drift region is optimized, the conductivity modulation performance in the device body is improved, a negative differential resistance (NDR) region is eliminated effectively, the cut-off loss of the IGBT device is reduced effectively, and finally, compromise optimization for conductivity pressure drop and cut-off loss is realized.

An accumulation layer controlled thyristor, which belongs to the technical field of semiconductor power devices, is characterized in that the on/off of the thyristor can be controlled by stopping electron circulation through an electron barrier of an internal electric field formed in a P bypass region and an N depletion region. When a positive voltage is applied on a gate, an accumulation layer is formed at the interface between the N depletion region (33) and a gate oxide layer (6); an electron inversion channel is formed in a P-type base region (8); and electrons pass through an N active region (9), the accumulation layer, an N layer (200), and the electron inversion channel to the an N base region (3), thereby controlling the normal operation of the device. The accumulation layer controlled thyristor as the substitute of the conventional gate controlled thyristors, such as MOS controlled thyristors, has the advantages of lower conduction voltage drop, larger saturation current density, no parasitic effect, and greatly improved safety operation area, and can overcome the disadvantages of the conventional gate-controlled thyristors, such as the deficiency of current saturation characteristic and poor turn-off capability.

The invention provides a silicon carbide insulated gate bipolar transistor comprising an N-type heavily doped first field stop layer; an N-type heavily doped second field stop layer which is formed onthe N-type heavily doped first field stop layer; an N-type lightly doped drift layer which is formed on the N-type heavily doped second field stop layer; a regulation and control P-type Base region which is formed in the N-type lightly doped drift layer; an N-type heavily doped source region which is formed in the regulation and control P-type Base region; source metal which is formed in the partial region of the regulation and control P-type Base region and the partial upper surface of the N-type heavily doped source region and forms ohmic contact with the upper surface and the side wall ofthe N-type heavily doped source region; a gate dielectric layer which is formed on the N-type lightly doped drift layer; a grid electrode which is formed on the grid dielectric layer; an interlayer dielectric which is formed on the grid electrode and the two sides of the grid electrode so as to isolate the grid electrode from the source metal; and a P-type heavily doped collector region which is formed on the back surface of the N-type heavily doped first field stop layer. The double-layer field stop layer structure is formed so that the characteristics of the device are optimized and the robustness is improved.

The invention belongs to the technical field of power semiconductors, and in particular relates to a high withstand voltage and low loss super junction power device. The device provided by the invention is characterized in that a pinch-off structure is arranged on a P-type drift region; the pinch-off structure is composed of pinch-off grooves and a P-type body contact region between the pinch-offgrooves; during forward conduction, the pinch-off structure pinches the middle P-type drift region, suppressing the collection of holes by the P-type drift region and improving the storage effect of carriers in the drift region; when the device is turned off, the P-type drift region is connected with an emitter through the P-type body contact region to be used as a hole extraction path to reduce the turn-off loss; when forward withstand voltage is applied, the P-type drift region contacts the emitter through the P-type body contact region, and the potential is 0; the P-type drift region has abetter auxiliary depletion effect; and the device has higher withstand voltage. Compared with a conventional super junction IGBT device, the device provided by the invention has lower on-voltage dropand better Von-Eoff discount. Compared with a P-column floating super junction IGBT device, the super junction IGBT device provided by the invention have higher forward withstand voltage.

The invention belongs to the technical field of power semiconductor devices and relates to a lateral IGBT and a manufacturing method thereof. A superjunction structure is introduced into the three-dimensional direction on the basis of a conventional lateral IGBT, thereby reducing the on-resistance of the device without affecting the breakdown voltage of the device. The introduced N-type charge storage layer can improve the carrier concentration distribution in the drift region in order to further reduce the on-state voltage drop of the device. The introduction of a split gate structure can effectively shield the influence of the N-type charge storage layer on the breakdown voltage of the device and reduces the gate capacitance, especially the Miller capacitance, thereby increasing the switching speed of the device. The introduction of a PMOS structure can increase the carrier extraction speed of the device in an off state, increases the turn-off speed of the device, and reduces the switching loss of the device.

The invention belongs to a semiconductor technology, and particularly relates to an MOSFET (Metal Oxide Semiconductor Field Effect Transistor) integrated with trench Schottky. The MOSFET integrated with the trench Schottky is characterized in that a Schottky diode formed by Schottky contact and a substrate is integrated in the MOSFET; a Schottky junction is provided with a planar Schottky junction positioned on a surface and a trench Schottky junction positioned in a body; and the area of the Schottky junction is increased under the condition of occupying the same chip area, so that higher current can be carried. A plurality of P-type heavily-doped rings are further arranged below the trench Schottky junction, and a Schottky diode is switched on at a relatively low voltage to form a conductive path when a body diode is switched on; and when the voltage is boosted to be over 0.5V, the P-type heavily-doped rings below the trench Schottky junction inject minority carriers into an N-type drift region, so that forward break-over voltage drop of the Schottky junction is reduced, and a conductivity modulation effect is achieved. Through adoption of the method, body diode break-over loss of the MOSFET can be reduced, and reverse electric leakage of the Schottky diode is reduced through the P-type heavily-doped rings at the same time.

The invention belongs to the technical field of power semiconductor devices, and particularly relates to a trench type silicon carbide reverse blocking MOSFET device and a production method thereof. Compared with a traditional trench type silicon carbide MOSFET, by using the device of the invention, an N-type silicon carbide substrate is removed, a first N-type silicon carbide buffer layer is introduced to one side of a device source region, a second N-type silicon carbide buffer layer is introduced to one side of a device drain region, and a junction Schottky barrier diode structure is introduced to one side of the device drain region. The device structure can enable the trench type silicon carbide MOSFET to obtain a large forward and reverse symmetrical withstand voltage and to have small forward conduction voltage drop at the same time. In addition, in order to further solve the reliability problem of a gate oxide layer of the device and the problem of a large gate-drain capacitance, several corresponding derivative structures are provided.

The invention belongs to the technical field of power semiconductor devices and relates to a lateral trench insulated gate bipolar translator (IGBT) having a positive channel metal oxide semiconductor(PMOS) and its preparation method. Based on a lateral IGBT (LIGBT) device structure, a current carrier storage layer is added to the lateral-trench IGBT having the self-biased PMOS to enhance the conductivity modulation effect, and reduce the device conduction pressure drop; a side face of a grid electrode is wrapped by a sorting grid to reduce the Miller capacitance, reduce the turn-off time, reduce the turn-off loss, and improve the compromise between the forward conduction voltage drop and the turn-off loss; in the meanwhile, the gate charge of a device can be reduced, and drive loss is reduced; the compromise characteristic between a current decline rate (di/dt) and the conduction loss (Eon) is improved; automatic turn-on of a metal-oxide-semiconductor field-effect transistor (MOSFET)is self-biased during forward conduction, a voltage of a charge storage area is clamped, a saturation current is reduced and a short-circuit safe working area is optimized; the turn-on of the MOSFETself-biased in a preliminary stage is turned off, extraction of remaining current carriers of a drift region is accelerated, and the turn-off loss is reduced; a buried layer on a left side of trench gate can assist voltage resistance, and a blocking voltage is increased; and a thin gate oxide layer can reduce a threshold voltage of the device, and reduce the current densify of a latch.

The invention provides a semiconductor capable of improving the current rebounding phenomenon of a reverse-conducting double-insulated-gate bipolar transistor, improving the turn-off speed and improving voltage resistance. The semiconductor is structurally characterized in that a buried oxide is arranged on a P-type substrate and provided with a drift region, the drift region comprises a first N-type drift region, a first P-type drift region, a second N-type drift region and a second P-type drift region, the first N-type drift region and the first P-type drift region are arranged in an opposite-angle mode, and the second N-type drift region and the second P-type drift region are arranged in an opposite-angle mode; a P-type region is arranged in the first N-type drift region and the second P-type drift region, an N-type emitter region, a P-type collector region and cathode metal connecting the N-type emitter region with the P-type collector region are arranged in the P-type region, and a cathode gate oxide and a cathode polycrystalline silicon layer are arranged on the upper surface of the P-type region; an N-type region is arranged in the first P-type drift region and the second N-type drift region, an N-type collector region, a P-type emitter region and anode metal connecting the N-type collector region with the P-type emitter region are arranged in the N-type region, and an anode gate oxide and an anode polycrystalline silicon layer are arranged on the upper surface of the N-type region.

The invention belongs to the technical field of power semiconductor devices, and particularly relates to a planar silicon carbide reverse-blocking MOSFET device and a preparation method thereof. Compared with a traditional planar silicon carbide MOSFET, the planar silicon carbide reverse-blocking MOSFET device in the invention has the following advantages: an N-type silicon carbide substrate is removed, a first N-type silicon carbide buffer layer is introduced to one side of a source region of the device, a second N-type silicon carbide buffer layer is introduced to one side of a drain region of the device, and a junction Schottky barrier diode structure is introduced to one side of the drain region of the device. According to the above device structure, planar silicon carbide MOSFET has relatively small forward conduction voltage drop while obtaining large forward and reverse symmetrical withstand voltage. In addition, in order to further improve the withstand voltage and conduction characteristics of the device, several corresponding derivative structures are provided.

The invention belongs to the technical field of manufacturing semiconductor devices, the invention relates to a silicon carbide Schottky diode with high withstand voltage, A semiconductor substrate comprises an N-type silicon carbide substrate and an N-type silicon carbide epitaxial layer, the upper part of the N-type silicon carbide epitaxial layer is provided with a plurality of spaced apart strip-shaped first P-type well regions and strip-shaped first N-type well regions, A plurality of stripe-shaped second P-type well regions and stripe-shaped second N-type well regions are arranged belowor on the lower surface of the stripe-shaped first P-type well region and the stripe-shaped first N-type well region respectively, and the stripe-shaped first P-type well region and the stripe-shapedsecond P-type well region are respectively at angles of 30 degrees to 90 degrees; A stripe-shaped second P-type well region with a certain angle with the stripe-shaped first P-type well region is arranged below the stripe-shaped first P-type well region, and the doping concentration of the stripe-shaped N-type well region in the stripe-shaped P-type well region is increased at the same time, the breakdown voltage of the device is greatly increased, and the surge current capability of the device is improved.