2results about How to "Reduce forward voltage drop" patented technology

The application provides an inverse-conducting insulated gate bipolar transistor and a preparation method thereof, and belongs to the technical field of power semiconductor devices, and comprises: a first groove is a gate groove, a second groove is an emitter groove, and a third groove is an ineffective gate groove; in the lateral direction parallel to the cell surface, the first groove, the second groove and the third groove are sequentially and spacedly arranged, and the first groove and the second groove are connected through a fourth groove, and the fourth groove is a gate groove; in the longitudinal direction, the second groove is located between two adjacent fourth grooves. The beneficial effects are as follows: the gate groove and the ineffective gate groove are connected through the lateral gate groove, the forward conduction voltage drop and the conduction loss of the device are reduced; the current channel is increased, the current distribution is more uniform, the heat loss is reduced, the reliability and the power density of the device are improved; the emitter groove is used for repeatedly arranging the polysilicon gate and the metal gate in the lateral and longitudinal directions, the regularly arranged diodes and Schottky diodes are formed, and the reverse diode current distribution is more uniform.

The application relates to the technical field of semiconductors, in particular to a super-junction fast recovery diode and a manufacturing method thereof, which comprises a substrate, a buffer layer located on the substrate, a drift layer located on the buffer layer, a P-type region located on the drift layer, and a P column located in the drift layer and on the buffer layer, wherein the bottom of the P column is in contact with the upper edge of the buffer layer, and the top of the P column is not in contact with the lower edge of the P-type region. Through the structural arrangement of the super-junction fast recovery diode, the reverse withstand voltage of the device is greatly improved, the on-state voltage drop is reduced, the reverse recovery performance is enhanced, and the reverse recovery loss is reduced.