305 results about "Safe operating area" patented technology

System and methodology providing a secure workspace environment is described. In one embodiment, for example, in a computer system, a method is described for creating a secured workspace within an existing operating system for allowing users to run applications in a secured manner, the method comprises steps of: creating a policy for configuring the secured workspace, the policy specifying how information created during operation of the applications may be accessed; hooking particular functions of the operating system in order to obtain control over the information created during operation of the applications; during operation of the applications, encrypting the information to prevent unauthorized access; in response to a request for access to the information, determining whether the request complies with the policy; and if the request complies with the policy, satisfying the request by providing access to a decrypted copy of the information.

System and methods providing secure workspace sessions is described. In one embodiment a method for providing multiple workspace sessions for securely running applications comprises steps of: initiating a first workspace session on an existing operating system instance running on the computer system, the first workspace session having a first set of privileges for running applications under that session; while the first workspace session remains active, initiating a second workspace session on the existing operating system instance running on the computer system, the second workspace session having a second set of privileges for running applications under the second workplace session; and securing the second workspace session so that applications running under the second workplace session are protected from applications running outside the second workspace session.

A method for setting a safe work area and a rated load in a swing type work machine, as well as a swing type work machine which utilizes the said method, are disclosed. An area where a strength-based safe work area which is established taking the strength of a swing member into account and a stability-based safe work area which is established taking the stability of the work machine into account overlap each other, is set as a safe work area to be used actually. Likewise, out of a strength-based rated load which is set taking the strength of the swing member into consideration and a stability-based rated load which is set taking the stability of the work machine into consideration, the lower one is set as a rated load to be used actually. Using the safe work area and rated load thus obtained, there are made a safety control and an appropriate display. According to this method, in a swing type work machine such as a crane, it is possible to establish a safe work area and a rated load both matching the actual hoisting capacity of the work machine.

The invention discloses a monitoring circuit capable of identifying whether the temperature of IC chip is higher than the temperature of safe operating area. The invention can monitor the variation of PN junction voltage, which is conducted by forward bias and flowing through a constant current, with temperature. The temperature monitoring circuit comprises a voltage bleeder circuit, a multi-output current source circuit, a temperature sensing circuit, and a voltage amplification circuit. The whole circuit does not use resistor unit. The gain of the voltage amplification circuit is controlled by forming positive feedback loop in the multiple amplification structures of the voltage amplification circuit, so that the circuit has dynamical characteristic of temperature hysteresis. Meanwhile, the positive feedback introduced into the voltage amplification circuit reduces the gain requirement to the voltage amplification circuit, and steepens the jump of the output signal of the circuit.

The invention relates to an IGBT intermittent life test method based on simulation modeling and a short-time test. The method comprises the following steps of step1, determining a heat dissipation condition; step2, determining a parameter control method; step3, determining a failure criterion; step4, determining a device power size and a junction temperature control range; step5, carrying out safeoperation area and maximum allowable junction temperature analysis; step6, implementing the short-time test; step7, carrying out simulation modeling analysis; and step8, optimizing an intermittent life test scheme. In the method, the heat dissipation condition, the parameter control method, the power size, a temperature range, the safe operation area, a failure mechanism and other factors are comprehensively considered; several sets of intermittent life test schemes are preselected; through carrying out a short-time power circulation test, temperature increasing and decreasing time of a device in single circulation is acquired; a simulation method is used to acquire a power circulation frequency before device failure; and actual power circulation test time of each preselection scheme is pre-estimated so that an optimal intermittent life test scheme is acquired through optimization. The method belongs to the power device reliability evaluation technology field.

The invention particularly discloses an electric vehicle low-voltage high-current battery pack combination device and a control method. A plurality of single-cell lithium batteries are parallelly connected and serially connected to form a certain-voltage certain-capacity battery pack, the plurality of battery packs integrating with a battery monitor are serially connected to form a low-voltage certain-capacity battery pack branch, and the battery pack branches are parallelly connected to form a low-voltage high-current lithium battery assembly. The combination means is flexible, and the requirements of lithium batteries with various voltages and capacities can be met. A control device for the lithium battery pack combination device is capable of controlling an IGBT (insulated gate bipolar transistor) switch to charge and discharge in different ways according to the current states of the bather pack branches, the battery pack branches can operate in an optimal operation area to the maximum extent, the service life of each battery is prolonged as far as possible, the battery assembly is guaranteed to operate in the safe operation area, and the requirements of electric vehicles for power supply are also met.

A relatively high-speed, high-efficiency CMOS two branch driver core that may operate under relatively low supply voltage may include thin oxide CMOS transistors configured to generate rail-to-rail output swings larger than twice a supply voltage and without exceeding safe operating area limits. Each of the two branches may include two stacked CMOS inverter pairs configured to drive a respective load capacitance coupled between respective CMOS inverter outputs, in phase opposition to the other branch. A pre-driver circuit input with a differential modulating signal may output two synchronous differential voltage drive signals of a swing of half of the supply voltage and DC-shifted by half of the supply voltage with respect to each other and that may be applied to the respective CMOS inverter inputs of the two branches.

A multi-use variable guard rail system for providing a safe working area is mountable on various surfaces, whether sloped (roofs), vertical (walls) or horizontal (floors). A rail support of the system has an upright pivotally engaged with a base, and a brace that locks the upright relative to the base in numerous positions ranging between an acute angle and an obtuse angle where the upright and base are linearly aligned. The upright has openings that hold rails such as various sizes of lumber in a vertically stacked array without the need to cut or fasten the lumber, and which allows for replacement of rails without disassembly of the rest of the system. The base has a tongue particularly suited for roof work, namely it is used to mount the rail support to the roof, yet allows the base to be lifted for placing shingles thereunder.

The invention discloses a power communication system and method and relates to the communication technical field. The power communication system and method solve the problem of high cost in application of a communication system to a power secondary system in the prior art. The power communication system comprises a plurality of safety working areas, transverse partition devices and longitudinal transmission devices. Each safety working area comprises a plurality of business systems, the transverse partition devices are arranged among the safety working areas of different safety grades and used for transversely connecting the safety working areas of different safety grades, the longitudinal transmission devices are arranged in the safety working areas and used for establishing a virtual private network (VPN), and the business systems in the safety working areas are longitudinally connected through the VPN. The power communication system and method are mainly applied to the process of the communication among the safety working areas and in the safety working areas in the power secondary system.

The invention discloses an insulate gate bipolar transistor (IGBT) with a current carrier storage layer and an additional hole passage, and belongs to the technical field of semiconductor power devices. In the IGBT, an N-type current carrier storage layer (5) and a large P<+> tagma (4) structure are introduced on the basis of a conventional planar non-pouch-through IGBT. The N-type current carrier storage layer (5) improves a conductivity modulation effect close to an emitter and the large P<+> tagma (4) structure plays a role in providing an additional passage for a hole so that the latch-up resistance is improved. Due to the design of the N-type current carrier storage layer (5) and the large P<+> tagma (4), the flow path of a hole current of the conventional IGBT is optimized, so that a safety operation area of a device is enlarged and the sensitivity of latch current density to a temperature is reduced.

The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.

The invention provides a trench gate IGBT chip. The trench gate IGBT chip comprises a plurality of cells connected in parallel, each cell comprises a first trench gate and a second trench gate, each first trench gate and the corresponding second trench gate are isolated through a first conduction type region, each second trench gate is located on one side of the corresponding first trench gate, and an emitter and a second conduction type source electrode region are arranged on the other side of the corresponding first trench gate. The trench gate IGBT chip further comprises third trench gates formed in the first conduction type region, and the straight line where the gate lengths of the third trench gates are located is intersected with the straight line where the gate lengths of the second trench gates are located. Compared with the prior art, the trench gate IGBT chip has the advantages that technology difficulty and technology cost for manufacturing cannot be increased. In addition, as the third trench gates are additionally arranged, the trench density of the trench gate IGBT chip is improved, voltage withstanding of the trench gate IGBT chip is easily improved, power dissipation of the trench gate IGBT chip is easily reduced, and the safety working area performance of the trench gate IGBT chip is easily improved.

A mobile work zone protection device is disclosed. It includes a front carrier, a barrier beam assembly, and a rear carrier. In one embodiment, the barrier beam assembly includes two sets of telescoping beam structures. Each of these structures can rotate from one side of the device to the other, and thus can be deployed to create a safe work zone for roadway workers on either side of the device. The structure can also be left in the transit position to provide and enclosed safe work zone.

A SiC Power Semiconductor device of the Field Effect Type (MOSFET, IGBT or the like) with “muted” channel conduction, negative temperature coefficient of channel mobility, in situ “ballasted” source resistors and optimized thermal management of the cells for increased Safe Operating Area is described. Controlling the location of the Zero Temperature Crossover Point (ZTCP) in relationship to the drain current is achieved by the partition between the “active” and “inactive” channels and by adjusting the mobility of the carriers in the channel for the temperature range of interest. The “Thermal management” is realized by surrounding the “active” cells/fingers with “inactive” ones and the “negative” feedback of the drain/collector current due to local increase of the gate bias is achieved by implementing in-situ “ballast” resistors inside of each source contact.

The invention discloses an electromagnetic transient analysis method for a large-capacity power-electron conversion system and belongs to the technical field of power-electron conversion and control. The method comprises the following steps: the large-capacity power-electron conversion system carries out one protection action; system parameters before and after protection action of the conversion system are collected to determine a safe working area of the conversion system; stray parameters of the conversion system are extracted to further determine a transient bus structure of the conversion system; a feedback control set value of a gate drive signal of a semiconductor switching device is determined according to the bus structure and the stray parameters; delay time of the conversion system is determined according to the feedback control set value of the gate drive signal of the semiconductor switching device; and at last the delay time of the safe working area of the system is determined. By the method, the existing device safe working area is extended to the system safe working area, the existing lumped parameter topological structure is expanded to a main circuit structure which considers stray parameters, and the existing signal pulse modulation algorithm is extended to main circuit pulse control strategies.

The present invention relates to a semiconductor device (1) in silicon carbide, with a highly doped substrate region (11) and a drift region (12). The present invention specifically teaches that an additional layer (13) is positioned between the highly doped substrate region (11) and the drift region (12), the additional layer (13) thus providing a wide safe operating area at subsequently high voltages and current densities.

The invention discloses an LDMOS (Laterally Diffused Metal Oxide Semiconductor) preparation method for efficiently collecting substrate current, wherein the method comprises the following steps: adopting standard preparation technology of LDMOS, and realizing the LSMOS capable of efficiently collecting the substrate current just through the following layout design, namely, using an active region, an N-type drift region and a P-type body region to form the drain region, the source region and the body leading-out region of an LDMOS device; defining a channel region by using polycrystalline; and realizing the drain electrode, the source electrode and the body leading-out electrode by using N+ injection and P+ injection. The regions used for source electrode leading-out N+ injection and the regions used for body leading-out P+ injection are arranged alternatively in the source region. In the invention, the body leading-out position is closer to the channel region formed by a hot carrier and the corresponding substrate current; therefore, the substrate current can be more efficiently collected, parasitical NPN (Negative-Positive-Negative) bipolar transistor is prevented from being turned on due to overlarge substrate current, the device is prevented from entering Snapback state for burning, and the purpose of enlarging safe work area of the LDMOS is achieved.

The invention provides a high-voltage MOS device, which at least includes a grid, a source and a drift region, wherein, the device further includes at least two field plates which are mutually separated with certain distance and are distributed at the upper surface of the drift region, the field plate which is nearest to the grid is connected with the source, and the other field plate is connected with the grid. The two field plates are both composed of polysilicon layers, and the thickness is the same as the thickness of the polysilicon layers. The lengths of the two filed plates can be same or different. The length of the field plate is decided by the doping level of the drift area, the lower the doping level of the drift area is, the longer the filed plate is, and the length of the filed plate is not more than one third of the length of the drift region. The length of the field plate is more than one sixth and less than one fourth of the length of the drift region. Compared with the prior art, the device of the invention can improve breakdown voltage and reduce on-resistance, the speed of the device is not affected and safe working area is larger.

The invention provides an insulated gate bipolar transistor (IGBT) with a floating buried layer, belonging to the power semiconductor device technology field. According to the invention, based on a traditional IGBT device structure, a drift region with a first conductive type is introduced with one or more layers of continuous or incontinuous second conductive type floating buried layers, through a modulation effect of introduced space charge and additional electric field of the second conductive type floating buried layer, new electric field peak is introduced into the drift region of the first conductive type, and with a same device drift region thickness, breakdown voltage of an IGBT device is substantially raised; with certain breakdown voltage, an IGBT device drift region thickness can be substantially reduced, thus forward conduction voltage drop and shutoff time of the device are substantially reduced. Simultaneously, with an effect of introduced space charge of the floating buried layer, avalanche breakdown in device shutoff can be inhibited, and dynamic breakdown voltage and reverse direction safety operation area of the IGBT device are improved.

The invention discloses a LDMOS. Based on the traditional LDMOS (laterally diffused metal oxide semiconductor) structure, a light dope area (30) is arranged on the side wall and the bottom close to a groove (13) in a well (12). The doping types of the light dope area (30) and the well (12) are the same and the doping density of the light dope area (30) is lower. The invention also discloses a manufacturing method of an LDMOS. The shifting area of the traditional LDMOS is the well (12) but the shifting area of the LDMOS provided by the invention is the well (12) and the light dope area (30), so that the electric field along vertical and horizontal directions of the groove in the LDMOS provided by the invention is conveniently reduced, therefore reducing the electron collision strength in the shifting area, restraining the hot carrier injection effect, and increasing the safety working area and reliability of the LDMOS device.