IGBT intermittent life test method based on simulation modeling and short-time test

A technology of life test and short-term test, which can be used in the field of law and comprehensive consideration of heat dissipation conditions, and can solve problems such as analysis and verification.

Inactive Publication Date: 2018-03-30
BEIHANG UNIV
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Problems solved by technology

However, the general method of intermittent life test is roughly stipulated in the current standard, and there is no scientific ...

Method used

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  • IGBT intermittent life test method based on simulation modeling and short-time test
  • IGBT intermittent life test method based on simulation modeling and short-time test
  • IGBT intermittent life test method based on simulation modeling and short-time test

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Embodiment Construction

[0049] The present invention will be further described in detail below in conjunction with the accompanying drawings and an intermittent life test case of a typical TO-220 packaged single-tube IGBT device.

[0050] A kind of IGBT intermittent life test method based on simulation modeling and short-time test of the present invention, concrete steps are as follows figure 1 Shown:

[0051] Step 1: Determine the cooling conditions

[0052] Such as figure 2 As shown in , select a single-tube IGBT device in a TO-220 package to design an intermittent life test plan. The main indicators of the device are shown in Table 3 and Table 4.

[0053] Table 3 Absolute Maximum Ratings of Case IGBT Devices

[0054]

[0055]

[0056] Table 4 Electrical characteristics of the case IGBT device at a junction temperature of 25°C (unless otherwise specified)

[0057]

[0058] The present invention will be described in detail below. First select three kinds of radiators, and their specif...

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Abstract

The invention relates to an IGBT intermittent life test method based on simulation modeling and a short-time test. The method comprises the following steps of step1, determining a heat dissipation condition; step2, determining a parameter control method; step3, determining a failure criterion; step4, determining a device power size and a junction temperature control range; step5, carrying out safeoperation area and maximum allowable junction temperature analysis; step6, implementing the short-time test; step7, carrying out simulation modeling analysis; and step8, optimizing an intermittent life test scheme. In the method, the heat dissipation condition, the parameter control method, the power size, a temperature range, the safe operation area, a failure mechanism and other factors are comprehensively considered; several sets of intermittent life test schemes are preselected; through carrying out a short-time power circulation test, temperature increasing and decreasing time of a device in single circulation is acquired; a simulation method is used to acquire a power circulation frequency before device failure; and actual power circulation test time of each preselection scheme is pre-estimated so that an optimal intermittent life test scheme is acquired through optimization. The method belongs to the power device reliability evaluation technology field.

Description

(1) Technical field: [0001] The invention provides an IGBT intermittent life test method based on simulation modeling and short-term test. The method comprehensively considers factors such as heat dissipation conditions, parameter control methods, power size, temperature range, safe working area and failure mechanism, and preselects For several sets of intermittent life test schemes, the heating and cooling time of the device in a single cycle is obtained by conducting short-term power cycle tests, and the number of power cycles before device failure is obtained by means of simulation methods, and the actual power cycle test time of each pre-selected scheme is estimated, and then It is preferred to obtain the best intermittent life test scheme. The method belongs to the technical field of reliability evaluation of power devices. (two) background technology: [0002] As a representative product of the third technological revolution of power semiconductor devices, IGBTs are w...

Claims

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Application Information

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IPC IPC(8): G01R31/26G06F17/50
CPCG01R31/2608G01R31/2642G06F30/23
Inventor 付桂翠程禹万博姜贸公
Owner BEIHANG UNIV
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