122results about "Diode testing" patented technology

The present application provides a method for performance evaluation and structure optimization of a high-power semiconductor laser chip, and a system for performance evaluation. Wherein the method for performance evaluation of a high-power semiconductor laser chip comprises: setting a window in an N-surface electrode of a chip to be tested; maintaining the chip to be tested in an operating state, wherein spontaneous radiation is generated in an active area of a quantum well of the chip to be tested; imaging the spontaneous radiation at a position outside the chip to be tested; acquiring, by using a spectrometer outside the chip to be tested, a spectrum of the spontaneous radiation to obtain a two-dimensional distribution of temperature of the quantum well of the chip to be tested in the operating state; and acquiring, by using a CCD camera outside the chip to be tested, an image of the spontaneous radiation to obtain a two-dimensional distribution of carriers in the quantum well of the chip to be tested in the operating state. The method for performance evaluation and structure optimization of a high-power semiconductor laser chip provided by the present application can get the temperature distribution and the carrier concentration distribution of the chip to be tested in the operating state with a resolution that is freely adjustable, the operation is convenient and easy to implement, and the accuracy of evaluation results is effectively improved.

Proposed are a test device and a manufacturing method of the test device capable of testing a test object that is provided with an electrode which has a size and / or a pitch distance ranging from 1 to 100 micrometers (μm).

The invention discloses a femtosecond pulse laser modulation-based GaN-based micro light-emitting diode test system, which comprises a femtosecond pulse laser excitation module, a first detection light path, a to-be-tested GaN-based micro light-emitting diode, a photovoltage detection and bias control module, a photoluminescence detection module and a control module, the control module is configured to control the excitation power and the external bias voltage of the femtosecond pulse laser excitation module, and synchronously collect a photoluminescence spectrum signal and a photovoltage signal; according to the excitation power, the external bias voltage, the photoluminescence spectrum signal and the photovoltage signal, the competition relation between carrier drift extraction and local radiation recombination under different bias electric field conditions is obtained, and therefore an experimental basis is provided for structural design and working bias optimization of the GaN-based micro light-emitting diode device to be tested.

Implementations described herein are related to a diode driver that recirculates residual current from an operating current pulse in an inductor. Such recirculation produces a diagnostic current pulse to a diode array for measuring a voltage drop across a portion of the array. For example, after a controller charges an inductor of a diode driver to deliver operating current pulses to a portion of a diode array for illumination, the controller causes a residual current to remain and recirculate in the inductor. In some implementations, in response to the recirculating current reaching a monitoring threshold, the controller delivers a monitoring pulse to the portion of the diode array to measure a voltage drop across the portion of the diode array. In some implementations, the controller may infer defectivity in the portion of the array from such voltage drop measurements over time.

A test method and apparatus for bipolar degradation of a diode, and a device. The method comprises: respectively performing static characteristic tests on a first diode and a second diode, so as to obtain a first static characteristic test result and a second static characteristic test result; setting a pulse test current, a pulse test time and a pulse cycle time, so that, on the basis of the pulse test current, the pulse test time and the pulse cycle time, a power semiconductor pulse current test device performs repeated short pulse current power cycle tests on the first diode under normal temperature conditions, and performs repeated short pulse current power cycle tests on the second diode under high temperature conditions; then, performing static tests, so as to obtain a plurality of static characteristic test results; and on the basis of the static characteristic test results, obtaining a bipolar degradation test result of a diode. By means of the method, bipolar degradation of the diode is tested, and the accuracy and reliability of the test result are improved.

Provided is a testing apparatus including: a light emission control unit which causes a plurality of light emitting elements to be tested to emit light; a light measurement unit which receives the light emitted from the plurality of light emitting elements and measures wavelengths of the received light; and a determination unit which determines whether there is an abnormality in at least one light emitting element on the basis of intensity distributions of the wavelengths of the light, which is emitted from the plurality of light emitting elements, measured by the light measurement unit. The testing apparatus may further include: a light source; an optical system which irradiates the plurality of light emitting elements with light emitted from the light source; and an electrical measurement unit which measures a photoelectric signal obtained by each of the plurality of light emitting elements photoelectrically converting the light radiated by the optical system.

Method for characterizing a batch of gain chips, each having a first reflective face and a second transparent face, the method comprising, for each gain chip: positioning the gain chip (99) with the second face facing towards a reflective diffraction grating (6); supplying the gain chip (99) with a plurality of first and second values of supply current so that the gain chip (99) emits a respective first light beam (60) for each first value of supply current and a respective second light beam (60') for each second value of supply current; making impinge each first light beam (60) on the reflective diffraction grating (6) in a first angular position so as to generate a respective first zero-order diffracted beam (61) and a respective first first-order diffracted beam (62) entering the gain chip (99), and each second light beam (60') on the reflective diffraction grating (6) in a second angular position so as to generate a respective second zero-order diffracted beam (63) and a respective second first-order diffracted beam (64) not entering the gain chip (99); measuring a respective first value of optical power of each first zero-order diffracted beam (61), and a respective second value of optical power of each second zero-order diffracted beam (63); associating each first value of optical power with the respective first value of supply current, and each second value of optical power with the respective second value of supply current; as a function of pairs of first values of supply current and of optical power and as a function of a first predetermined mathematical correlation, calculating a respective differential quantum efficiency, and, as a function of pairs of second values of supply current and of optical power and as a function of a second predetermined mathematical correlation, calculating a respective modal gain coefficient and a respective carrier density at transparency; verifying that the respective differential quantum efficiency, the respective modal gain coefficient, and the respective carrier density at transparency satisfy a respective predetermined selection criterion.

An inspection system includes an excitation light source, a voltage-sensing film, an illumination light source, an image capture device. The excitation light source provides an excitation beam to light-emitting diodes to generate open-circuit voltages. The voltage-sensing film is at a top side of the light-emitting diodes and includes a voltage-sensing medium layer and a first electrode layer. The first electrode layer is in the voltage-sensing medium layer to provide a gain effect of the open-circuit voltages, so that the voltage-sensing medium layer senses the open-circuit voltages, and a display of the voltage-sensing medium layer is changed with a portion or all of the open-circuit voltages. The illumination light source provides an illumination beam to the voltage-sensing film to generate a sensing image according to a display change. The image capture device is on a transmission path of the sensing image and receives the sensing image to generate an inspection result.

This disclosure relates to probe cards and methods for inspecting light-emitting diodes (LEDs) using the same. According to one aspect of this disclosure, the probe card includes: a probe substrate; a photodetector unit disposed on one surface of the probe substrate; and an electrode unit disposed on the photodetector unit and including a first sheath electrode and a second sheath electrode, the second sheath electrode including a through-hole overlapping the photodetector unit. Thus, the through-hole is formed in the second sheath electrode to allow light from the LED to be incident on the photodetector unit, and the electrode unit and the photodetector unit can simultaneously inspect the LED.

The invention provides a cartridge comprising a socket of insulative material and having upper and lower sides and a formation on the upper side to hold an electronic device; a set of contacts held in the socket to connect to the electronic device; a set of terminals connected to the set of contacts held by the socket; a circuit board, the set of terminals connected to the set of contacts being connected to a set of contacts on the circuit board; a lid; a detector mounted to the lid, the lid being movable to be positioned over the socket with the detector located in a position to detect a feature of the electronic device when and due to power being supplied through at least one of the set of terminals held by the socket to the electronic device; and a measurement channel connecting the detector to an interface on the circuit board.

The invention relates to a layout structure of a fast recovery diode and a test method, the layout structure of the fast recovery diode comprises a wafer which comprises odd-numbered line areas and even-numbered line areas which are alternately distributed, each odd-numbered line area comprises a plurality of first areas which are sequentially arranged along the line direction, and each even-numbered line area comprises a plurality of second areas which are sequentially arranged along the line direction; each even-numbered line area comprises a plurality of second areas which are sequentially arranged in the line direction; the first recovery diode and the second recovery diode are located in the second area, the second recovery diode is located on one side of the first recovery diode in the row direction, the first recovery diode has a first current specification, and the second recovery diode has a second current specification; and a third recovery diode in the first region, the third recovery diode having a third current specification, the size of the third current specification being greater than the size of the first current specification and greater than the size of the second current specification. According to the layout structure, test programs can be reduced, the test times can be reduced, the probe card cost can be reduced, and the productivity can be improved.

This invention provides an electronic device comprising a substrate, an electronic unit, a data line, a control unit, a test pad, and a test switch element. The substrate includes a first surface and a second surface opposite to the first surface, wherein the first surface includes an active region. The electronic unit is disposed on the substrate and located within the active region. The data line is disposed on the substrate. The control unit is disposed on the substrate and located within the active region, and the control unit is electrically connected between the electronic unit and the data line. The test pad is disposed on the second surface of the substrate. The test switch element is disposed on the substrate and located within the active region, and the test switch element is electrically connected between the data line and the test pad.

The invention provides a cartridge comprising a socket made of insulative material and having upper and lower sides, the upper side having a first formation for releasably holding a first electronic device, the socket having a first socket thermal opening formed from the lower side to the upper side through the socket, an interface connected to the socket to connect the first electronic device to an electric tester, a chuck of a thermally conductive material, a first thermal post attached to the chuck, the first thermal post being inserted into the first socket thermal opening, an end of the first thermal post being thermally connected to and in contact with the first electronic device, such that heat transfers primarily through the first thermal post as opposed to the insulative material of the socket between the chuck and the first electronic device, and a first set of contacts held in the socket and connecting terminals of the first electronic device to the interface, the first set of contacts being resiliently depressible to bring the first electronic device into contact with the end forming a first thermal surface of the first thermal post.

The invention discloses a failure detection circuit and method for an absorption diode in an IGCT power module, the circuit comprises a detection module and a control module which are connected in sequence, the detection module is electrically connected with a to-be-detected IGCT power module and is used for detecting current in a suppression reactor in the IGCT power module, the detection module is used for transmitting a detection signal to the control module, and the control module is used for controlling the absorption diode in the IGCT power module. And the control module is used for judging whether the absorption diode fails or not according to a detection signal of the detection module, outputting a control signal to the IGCT power module and controlling the working state of each IGCT device. The detection module detects the bus voltage of the converter, the pulse starting signal of the IGCT power module and the current signal on the suppression reactor, and judges whether the absorption diode fails or not according to the detection result of the current signal on the suppression reactor when the bus voltage is normal and the IGCT power module is started, so that the damage probability of the IGCT power module is reduced, and the service life of the IGCT power module is prolonged. And the operation reliability of the IGCT power module is enhanced.

Approaches and probes for excitation, detection, and sensing of samples. An example method includes positioning probes of a test tool relative to contact points that are associated with samples of a sample array such that the probes come into electrical contact with the sample array at the contact points, driving parallel electrical excitation of the samples, where electrical contact between the probes and the contact points is maintained continuously while performing the driving, and the parallel excitation of the samples produces values for testing the samples, and repeating the foregoing one or more times for other contact points. Another example method submerges a probe in a liquid conductive material to provide a conductive liquid at the end of the probe thereof and that can be positioned and / or moved continuously relative to the contact points of a sample to facilitate delivery of an electrical signal to drive excitation of the sample.

According to some aspects of the present disclosure, a power distribution apparatus includes one or more input terminals, each input terminal being connectable to a respective power source; one or more output terminals, each output terminal being connectable to one or more power devices; and one or more electrical paths, each electrical path connecting a respective one of the one or more input terminals and a respective one of the one or more output terminals, and including one or more solid state fuses. According to another aspect of the present disclosure, an aircraft includes a power source; an electric propulsion system; and a power distribution device connected above for delivering electrical energy from the power source to the electric propulsion system.

A probe card and a method for inspecting a light emitting element are disclosed. In one aspect, the probe card includes a probe substrate, a plurality of piezoelectric elements disposed on one surface of the probe substrate, and a plurality of electrode units disposed on the plurality of piezoelectric elements. Each electrode unit includes a plurality of pin electrodes, and each piezoelectric element of the plurality of piezoelectric elements corresponds one to one with each pin electrode of the plurality of pin electrodes. By applying a voltage to each piezoelectric element, its shape can be deformed to change the Z axis position of the corresponding pin electrode. This allows the probe card to adjust the height of individual pin electrodes for contacting electrodes of light emitting elements on a wafer, enabling accurate electrical inspection even when wafer flatness or electrode positions vary.

[Problem to be solved by the invention] In a method of checking optical characteristics of one LED of a pair of LEDs that are to be checked by causing the one LED to emit light and receiving the light by the other LED, using a current value of a current output by a photoelectric effect, optical characteristics of a plurality of LEDs cannot be checked at once. [Solution] A test device includes: an electrical connection portion electrically connected to terminals of each of a plurality of light emitting elements that are to be tested; a light source portion that irradiates light to the plurality of light emitting elements together; a measurement portion that measures a photoelectric signal output from the plurality of light emitting elements by photoelectric conversion of light irradiated by the light source portion and via the electrical connection portion; an acquisition portion that acquires a correction map including a correction value for correcting unevenness in intensity of light irradiated by the light source portion to positions of each of the plurality of light emitting elements; and a determination portion that determines whether each of the plurality of light emitting elements is good or not based on a measurement result of the measurement portion and the correction map acquired by the acquisition portion.

A pixel with a color-agnostic repair site includes a pixel controller, a first site for a first light emitter electrically connected to the pixel controller with a first wire, a second site for a second light emitter electrically connected to the pixel controller with a second wire different from the first wire, and a repair site for a repair light emitter. A repair wire can independently electrically connect the repair site to the pixel controller. A repair wire can electrically connect the repair site to the first wire or to the second wire with a jumper. The repair site can electrically connect to the first wire or to the second wire. A first repair wire can electrically connect the repair site to the first wire, a second repair wire can electrically connect the repair site to the second wire, and one of these wires can be cut.

A method for testing at least one bypass diode (4) on a photovoltaic installation (100) comprising at least one operating photovoltaic module (1), said photovoltaic module (1) comprising at least one string (2) of photovoltaic cells (3) connected to a bypass diode (4) dedicated to said string (2), the method comprising: a. shading a portion of the cells (3) of said string (2) so as to induce a bypass through said diode (4), said bypass causing a temperature increase in the diode (4) if the diode (4) is in a functional state; b. measuring at least one temperature of the diode (4); and c. comparing the measured temperature to a threshold to deduce a state of said diode (4). Abstract figure: Figure 8

A method for repairing a display module and a display module repaired by the method are provided. The method for repairing a display module includes: detecting light-emitting diode (LED) missing positions on a target substrate; loading the target substrate onto a first stage; loading a transfer substrate onto a second stage; arranging the target substrate and the transfer substrate by operating the first stage and the second stage; and transferring a laser consecutively to the LED missing positions by moving the target substrate and the transfer substrate at a constant speed by operating the first stage and the second stage in a row direction or a column direction.

Systems and methods for automatically determining parasitic capacitance (PC) correction parameters for a Light Emitting Diode (LED) pixel. When a test trigger signal is received by a PC detector, the PC detector starts a test process to measure the PC correction parameters of the LED pixel coupled to the PC detector. The PC detector determines the PC correction parameter for the corresponding LED pixel based on the detected PC characteristics and stores the PC correction parameter of the LED pixel with respect to a location of the LED pixel in the LED array to facilitate centralized PC correction on the LED pixel based on the PC correction parameter retrieved based on the pixel location.

An inspection device includes a carrier, an input electrode, a metal layer and a contact electrode. The input electrode is disposed on the carrier. The metal layer includes a fixed portion and an extending portion. The fixed portion is disposed on the carrier, the fixed portion has one end connected to the input electrode, and has another end that extends in a direction far away from the carrier. The extending portion is electrically connected to the another end of the fixed portion, the extending portion is separated from the carrier by a spacing to form a buffer region. The contact electrode is disposed on the extending portion of the metal layer, and electrically connected to the extending portion of the metal layer. The contact electrode has a concave surface facing away from the carrier.

Provided is an inspecting apparatus for an organic light-emitting display apparatus, including a connector including an inspection pad electrically connected to a signal pad of a display panel included in a glass panel, a panel driver electrically connected to the connector and supplying a driving signal for driving the display panel, and an impedance meter electrically connected to the connector and that measures the impedance of an organic light-emitting device included in the display panel.

The present disclosure relates to an optical sensor, comprising: a first circuit board having at least a data processing unit and an interface to a second circuit board, wherein the interface is connected with the data processing unit; and the second circuit board having an LED, a thermistor and a capacitor, which is connected in parallel with the thermistor, wherein the capacitor is embodied specifically for the LED, and an interface to the first circuit board, wherein LED, thermistor and capacitor are connected with the interface. The present disclosure relates also to a method for identifying an LED in an optical sensor.

A light-emitting device is disclosed, and more specifically, a design-for-testability (DFT) scan and related methods are disclosed within a light-emitting diode (LED) package. The LED package includes one or more LED chips and an active electrical component capable of initiating a DFT scan. The active electrical component can be configured to receive a scan initiation command via a single data stream comprising other commands and data controlling the operation of the one or more LED chips. By using the same data stream, the active electrical component and the LED package can be configured to perform a DFT scan without requiring a separate port for receiving DFT-specific signals. Upon receiving the scan initiation command, the active electrical component can generate a Test Mode Selection (TMS) signal internal to the active electrical component, and the TMS signal is used to trigger the DFT scan within the active electrical component.

The present teachings relate to a method for identifying reusable components of a vehicle lamp assembly, the method including: i) performing an electric circuit functionality test on each component of a plurality of components of the vehicle lamp assembly; ii) performing an illumination test on each light source within the vehicle lamp assembly; iii) identifying which of the components of the plurality of components pass and / or fail the electric circuit functionality test; and iv) identifying which light sources pass and / or fail the illumination test.

The present disclosure relates to a test card and a method for testing a light-emitting diode (LED) that uses it. The test card can comprise a test substrate, a photodetector unit on the test substrate, an electrode unit on the photodetector unit comprising a first pin electrode and a second pin electrode, and a through-hole through the second pin electrode, the through-hole overlapping the photodetector unit. Accordingly, the through-hole in the second pin electrode is configured so that the light emitted from the LED can fall onto the photodetector unit, and the electrode unit and the photodetector unit can simultaneously test the LED.

The invention provides a cartridge comprising a socket made of insulative material and having upper and lower sides, the upper side having a first formation for releasably holding a first electronic device, the socket having a first socket thermal opening formed from the lower side to the upper side through the socket, an interface connected to the socket to connect the first electronic device to an electric tester, a chuck of a thermally conductive material, a first thermal post attached to the chuck, the first thermal post being inserted into the first socket thermal opening, an end of the first thermal post being thermally connected to and in contact with the first electronic device, such that heat transfers primarily through the first thermal post as opposed to the insulative material of the socket between the chuck and the first electronic device, and a first set of contacts held in the socket and connecting terminals of the first electronic device to the interface, the first set of contacts being resiliently depressible to bring the first electronic device into contact with the end forming a first thermal surface of the first thermal post.

The invention discloses an LED flip chip packaging test sorting system based on dynamic thermal characteristic analysis, and the system is characterized in that the system comprises a conveying mechanism which is used for bearing and conveying an LED device; the test station is arranged on a path of the conveying mechanism and comprises a test probe, an optical test module and an infrared thermal image module; the control and sorting system is respectively in signal connection with the test probe, the optical test module and the infrared thermal image module; and the sorting execution mechanism is in signal connection with the control and sorting system. According to the system, specific electric stress excitation is introduced in the testing process, and the dynamic thermal response of an LED chip is monitored in real time, so that the heat dissipation defect which cannot be found by a traditional method can be sensitively detected, and more accurate pre-judgment and sorting of the reliability of an LED device are realized.