508results about "Diode testing" patented technology

The invention discloses a frequency converter maintenance test system with a protection function, which belongs to the technical field of frequency converter testing and comprises a detection seat, a simulation unit for simulating actual working conditions of a frequency conversion control panel is arranged on the detection seat, and a detection mechanism for detecting a diode in the frequency conversion control panel is further arranged on the detection seat. Through dynamic cooperation of the polarization assembly and the rotary simulation disc, the vibration direction of the vibration source can be flexibly adjusted, so that a multi-dimensional vibration scene possibly encountered in actual work of the frequency conversion control panel is covered, and the problem that vibration source simulation is lacked in a traditional frequency converter testing process is solved; an elastic supporting environment of actual installation is simulated through the air bag spring suspension, vibration energy emission distortion caused by rigid fixation is avoided, the accuracy of a large-capacitance vibration fatigue test is improved, automatic step-by-step wiring operation of detection is achieved through cooperation of the detection driving assembly and the universal test meter, and the overall detection wiring efficiency is improved.

The invention provides a wafer detector, a preparation method thereof and a wafer detection circuit, which can be applied to the technical field of wafer detection. The wafer detector comprises a substrate; the plurality of pairs of electrodes are arranged on the substrate along a first direction; wires respectively led out from each of the plurality of pairs of electrodes on the substrate; a cilia structure is arranged on each electrode in the plurality of pairs of electrodes, a conductive layer electrically connected with the corresponding electrode is arranged on the surface of the cilia structure, and when the cilia structure sweeps the electrode to be detected in the MicroLED wafer from the side direction of the electrode to be detected in the second direction, the conductive layer is electrically connected with the electrode to be detected. The cilia structure has rigidity, so that the cilia structure is in electric contact with the to-be-detected electrode through deformation. When the wafer detector is used for detecting the to-be-detected MicroLED wafer, the wafer detector does not need to be pressed down and lifted up repeatedly, and the to-be-detected MicroLED wafer can be measured at a high speed through horizontal movement only by aligning at an initial position once.

A pixel with a color-agnostic repair site includes a pixel controller, a first site for a first light emitter electrically connected to the pixel controller with a first wire, a second site for a second light emitter electrically connected to the pixel controller with a second wire different from the first wire, and a repair site for a repair light emitter. A repair wire can independently electrically connect the repair site to the pixel controller. A repair wire can electrically connect the repair site to the first wire or to the second wire with a jumper. The repair site can electrically connect to the first wire or to the second wire. A first repair wire can electrically connect the repair site to the first wire, a second repair wire can electrically connect the repair site to the second wire, and one of these wires can be cut.

The invention discloses an intelligent aging test fault diagnosis method, system and equipment for a lamp. The intelligent aging test fault diagnosis method for the lamp comprises the following steps: acquiring information of a tested lamp to be subjected to an aging test; setting external conditions according to the use environment of the tested lamp to be subjected to aging test; the data monitoring module obtains input power supply parameters; collecting power supply data; the data communication module executes data communication; judging whether abnormal data exists in the data or not; summarizing the power supply data in the aging test time period; performing waveform drawing on all the power supply data in the aging test time period, and performing statistical analysis; judging whether the parameters of the tested lamp are abnormal or not; if the judgment result is normal, outputting a normal data analysis result, and executing data archiving; if the judgment result is abnormal, diagnosis of the corresponding fault type is executed; and outputting a fault type analysis result.

The present disclosure provides an automated repair of LED substrates system in which an automated repair inspection module is used to determine the quality of incoming processing material an automated repair process module is used to process the processing material, an automated repair post-process module is used to inspect the resultant process material for acceptability, and an automated repair historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated repair process module, and an automated repair integration module to update the automated repair process module based upon the results of the automated repair historical module.

Performance evaluation and structural optimization methods for a high-power semiconductor laser chip, and a performance evaluation system for a high-power semiconductor laser chip. The performance evaluation method for a high-power semiconductor laser chip comprises: providing a window on an N-side electrode of a chip to be tested (step 1); keeping the chip in an operating state (step 2); allowing a quantum well active region of the chip to generate spontaneous emission, so that the spontaneous emission is imaged outside the chip (step 3); acquiring, by means of a spectrograph, a spectrum of the spontaneous emission outside the chip and obtaining a two-dimensional distribution of a quantum well temperature of the chip in the operating state; and acquiring, by means of a CCD camera, an image of the spontaneous emission imaging outside the chip and obtaining a two-dimensional distribution of charge carriers in the quantum well of the chip in the operating state (step 4). According to the performance evaluation and structural optimization methods for a high-power semiconductor laser chip, the distributions of the temperature and the charge carrier concentration in the quantum well of the chip to be tested in the operating state in which the resolution is freely adjusted can be obtained. Operations of the methods are convenient, and implementation is simple and easy, thereby efficiently improving the accuracy of an evaluation result.

The invention relates to the field of performance testing, in particular to a conductivity testing system for a diode, which draws a volt-ampere characteristic curve of the diode through a data analysis unit according to voltage at two ends of the diode and current flowing through the diode, and calculates the conductivity of the diode according to a fitting value of the volt-ampere characteristic curve and a standard curve. And calculating the conductivity characterization parameter of the diode according to the maximum temperature difference value of the diode image and the thermal image, judging whether to test the conductivity of the diode or not through the conductivity test unit according to the conductivity characterization parameter of the diode, and adjusting the output voltage of the power supply module. According to the invention, the conductivity of the diode is comprehensively represented through a plurality of indexes, so that the accuracy and reliability of the test are improved. The audio frequency in the process of testing the conductivity of the diode is obtained, and whether the conductivity of the diode is abnormal or not is judged by combining the characterization parameters of the conductivity of the diode.

The present application provides a method for performance evaluation and structure optimization of a high-power semiconductor laser chip, and a system for performance evaluation. Wherein the method for performance evaluation of a high-power semiconductor laser chip comprises: setting a window in an N-surface electrode of a chip to be tested; maintaining the chip to be tested in an operating state, wherein spontaneous radiation is generated in an active area of a quantum well of the chip to be tested; imaging the spontaneous radiation at a position outside the chip to be tested; acquiring, by using a spectrometer outside the chip to be tested, a spectrum of the spontaneous radiation to obtain a two-dimensional distribution of temperature of the quantum well of the chip to be tested in the operating state; and acquiring, by using a CCD camera outside the chip to be tested, an image of the spontaneous radiation to obtain a two-dimensional distribution of carriers in the quantum well of the chip to be tested in the operating state. The method for performance evaluation and structure optimization of a high-power semiconductor laser chip provided by the present application can get the temperature distribution and the carrier concentration distribution of the chip to be tested in the operating state with a resolution that is freely adjustable, the operation is convenient and easy to implement, and the accuracy of evaluation results is effectively improved.

The invention relates to a method (10) for assessing a remaining lifetime of an LED gear (20). The method (10) comprises the steps of: supplying (11) a constant current load from an electrolytic capacitor (21) of the LED gear (20); measuring (12) an electrical characteristic of the electrolytic capacitor (21) over time when the constant current load is supplied by the electrolytic capacitor (21); calculating (13) a capacitance of the electrolytic capacitor (21) based on the measured electrical characteristic; and determining (15) a remaining lifetime estimate and / or a reaching of an end of lifetime of the LED gear (20) based on the calculated capacitance.

Methods and probes for exciting, detecting, and sensing a sample are disclosed. An example method includes positioning a probe of a test tool relative to a contact point associated with a sample of a sample array such that the probe is in electrical contact with the sample array at the contact point; driving a parallel electrical excitation of the sample, where the electrical contact between the probe and the contact point is continuously maintained while the driving is performed, and the parallel electrical excitation of the sample produces a value for testing the sample; and repeating the above operation on other contact points for one or more times. Another example method submerges a probe in a liquid conductive material to provide a conductive liquid at its end of the probe, and may continuously position and / or move the probe relative to a contact point of a sample to facilitate delivery of an electrical signal to drive excitation of the sample.

Proposed are a test device and a manufacturing method of the test device capable of testing a test object that is provided with an electrode which has a size and / or a pitch distance ranging from 1 to 100 micrometers (μm).

The invention discloses an intelligent monitoring system for predicting the service life of a high-power LED lamp bead, and relates to the technical field of intelligent monitoring, and the system comprises a data collection module for collecting the real-time current density distribution data of the high-power LED lamp bead in a working state, and a calculation module for calculating the real-time current density distribution data of the high-power LED lamp bead in a working state. The calculation module is used for calculating the hot spot position and the hot spot temperature of the lamp bead based on the current density distribution data, the analysis module is used for analyzing the influence degree of the hot spot position and the hot spot temperature on the brightness attenuation of the lamp bead, and the driving regulation and control module is used for adjusting the driving current of the lamp bead according to the influence degree, optimizing the brightness and prolonging the service life of the lamp bead; according to the intelligent monitoring system for predicting the service life of the high-power LED lamp bead, the problem of brightness attenuation caused by inconsistent current density in a long-time high-power working state in the prior art is solved.

The present invention discloses a self-checking inspection machine for photovoltaic junction box diodes, comprising a machine body; a numerical display screen is fixedly arranged at the center of the top surface of the machine body; and further comprising: a bearing mechanism is arranged in the detection cavity inside the machine body; a driving mechanism is arranged inside the machine body, and the driving mechanism includes a driving gear, and the driving gear is rotatably arranged on the left and right sides in front of the inner bottom surface of the machine body; wherein a detection mechanism is arranged above the machine body, and a detection platform is slidably arranged above the inner part of the machine body. The self-checking inspection machine for photovoltaic junction box diodes drives the diodes to be pressed and positioned by the bearing mechanism inside the machine body, and the detection mechanism is linked to realize the detection of diodes of different specifications, and the diodes are driven to rotate by the lifting and lowering of the detector body, so as to detect the reverse voltage of the diodes.

The present teachings relate to a method for identifying reusable components of a vehicle lamp assembly, the method including: i) performing an electric circuit functionality test on each component of a plurality of components of the vehicle lamp assembly; ii) performing an illumination test on each light source within the vehicle lamp assembly; iii) identifying which of the components of the plurality of components pass and / or fail the electric circuit functionality test; and iv) identifying which light sources pass and / or fail the illumination test.

The invention discloses a femtosecond pulse laser modulation-based GaN-based micro light-emitting diode test system, which comprises a femtosecond pulse laser excitation module, a first detection light path, a to-be-tested GaN-based micro light-emitting diode, a photovoltage detection and bias control module, a photoluminescence detection module and a control module, the control module is configured to control the excitation power and the external bias voltage of the femtosecond pulse laser excitation module, and synchronously collect a photoluminescence spectrum signal and a photovoltage signal; according to the excitation power, the external bias voltage, the photoluminescence spectrum signal and the photovoltage signal, the competition relation between carrier drift extraction and local radiation recombination under different bias electric field conditions is obtained, and therefore an experimental basis is provided for structural design and working bias optimization of the GaN-based micro light-emitting diode device to be tested.

A light emitting element inspection method including: forming a plurality of light emitting element rods by etching a plurality of semiconductor material layers stacked on a growth substrate; forming a protective layer covering a portion of a top surface and a portion of side surfaces of the plurality of light emitting element rods and a contact electrode on the protective layer; forming a metal layer on the side surfaces of the plurality of light emitting element rods and on a portion of the growth substrate on which none of the plurality of light emitting elements rods is located; forming a contact pad connected to the metal layer on the growth substrate; and applying a test power to the contact electrode and the contact pad.

Implementations described herein are related to a diode driver that recirculates residual current from an operating current pulse in an inductor. Such recirculation produces a diagnostic current pulse to a diode array for measuring a voltage drop across a portion of the array. For example, after a controller charges an inductor of a diode driver to deliver operating current pulses to a portion of a diode array for illumination, the controller causes a residual current to remain and recirculate in the inductor. In some implementations, in response to the recirculating current reaching a monitoring threshold, the controller delivers a monitoring pulse to the portion of the diode array to measure a voltage drop across the portion of the diode array. In some implementations, the controller may infer defectivity in the portion of the array from such voltage drop measurements over time.

A method for determining a brightness noise level of a light-emitting semiconductor diode comprises steps of detecting an electrical voltage across the semiconductor diode during operation of the semiconductor diode at a constant current to obtain a voltage data set, and predicting the brightness noise level based on the voltage data set using a trained model.

A test fixture is described. Various components contribute to the functionality of the test fixture, including an insertion and removal device, a thermal post, a separate universal joint, a combination including a light detector, a thermal control method, a detection circuit in a socket cover, a standoff, and voltage redirection.

A method for operating an optoelectronic system, in particular an LED system with at least one LED unit, is provided, comprising: Receiving voltage values ​​of an LED voltage drop across the at least one LED unit; Determining a voltage change of the LED voltage dropped across the at least one LED unit based on the voltage values ​​of the LED voltage; Determining a time interval during which the voltage change of the LED voltage dropping across the at least one LED unit occurs between a first predefined limit value and a second predefined limit value; Executing an operational function of the optoelectronic system based on the determined time interval. Furthermore, an optoelectronic system is provided.

A method for testing semiconductor chips arranged in a wafer in a matrix with columns and rows comprises steps of moving a pressing device of a test device from row to row relative to the wafer, wherein a contact arrangement of the test device is pressed against the wafer by the pressing device in such a way that measuring contacts of the contact arrangement, each assigned to a column, electrically contact the semiconductor chips in the assigned columns of the respective row upon reaching a row, wherein the measuring contacts comprise a reference measuring contact assigned to a reference column, wherein the reference measuring contact is connected to a current source for detecting a measuring signal caused by contacting the semiconductor chip arranged in the reference column of the respective row,and for starting a test procedure for several semiconductor chips of the respective row depending on the detection of the measurement signal.,

The invention provides a detection system and method for an avalanche photodiode, and the system comprises an arbitrary signal generator, a laser, an adjustable attenuator, a time-to-digital converter and a test processor, the first output end of the arbitrary signal generator is connected with the laser, the laser is connected with the adjustable attenuator, and outputs a light pulse to the adjustable attenuator; the adjustable attenuator inputs the attenuated optical signal to the input end of the avalanche photodiode to be tested; a second output end of the arbitrary signal generator is connected with a time-to-digital converter; the time-to-digital converter receives an output signal of the avalanche photodiode to be tested; the test processor is connected with a to-be-tested avalanche photodiode and is used for debugging and configuring parameters of the to-be-tested avalanche photodiode; a to-be-detected avalanche photodiode is placed on the detection tool, and the detection tool and the semiconductor refrigerator are packaged together. According to the invention, the compatibility and integration degree of the system can be improved, the stability of the system is improved, and the sensitivity to detected photons is high.

The invention discloses a Mini LED backlight source testing method based on FCT testing equipment, relates to the field of backlight source testing, and solves the problem that backlight source testing efficiency is low at the present stage. The method comprises the steps that optical performance testing is conducted on a Mini LED screen, and a brightness abnormal signal or a color abnormal signal of the Mini LED screen is generated; randomly sampling and selecting a plurality of lamp beads in the Mini LED screen, marking the lamp beads as light-emitting diodes to be tested, connecting the plurality of light-emitting diodes to be tested to obtain a light-emitting diode group to be tested, and fixing the light-emitting diode group to an FCT test machine; performing electrical parameter testing on the to-be-tested light-emitting diode group to generate a power supply abnormal signal or a short circuit abnormal signal of the to-be-tested light-emitting diode group; and displaying a brightness abnormal signal, a color abnormal signal, a power supply abnormal signal and a short circuit abnormal signal of the Mini LED screen. According to the invention, the Mini LED backlight source is efficiently and accurately tested.

The invention discloses a weak signal acquisition and processing method for an AlGaN solar-blind APD, and relates to the technical field of signal acquisition and processing, and the method comprises the steps: receiving a solar-blind ultraviolet light signal through an APD, and converting the solar-blind ultraviolet light signal into a current signal; the current signal is input to the transimpedance amplification unit, the current signal is converted and amplified into a voltage signal, and the transimpedance amplification unit is set through the intensity of the current signal; the amplified voltage signal is input into an analog-to-digital conversion unit for analog-to-digital conversion, and a conversion result is transmitted to an embedded processing unit; and the embedded processing unit is used for carrying out signal processing on the conversion result, and the conversion result is transmitted to an upper computer through a communication interface to generate visual display. The technical problems that in the prior art, weak ultraviolet signal collecting and processing efficiency is low, and signals are prone to losing or noise superposition are solved, and the technical effects that signal collecting precision and efficiency are improved, and signal amplifying and processing capacity is enhanced are achieved.

The invention relates to an evaluation system. A method includes evaluating a first parameter, a second parameter, and a third parameter of a power switch. The first evaluation mode includes receiving a first sense current from the power switch at the common sense terminal; and measuring a first parameter during a switching event of the power switch based on the first sensed current. The second evaluation mode includes outputting a second sense current from the common sense terminal to the power switch; and measuring a second parameter dependent on a current flow of the second sense current through the power switch, the current flow dependent on an electrode voltage present at the drain or collector of the power switch. The third evaluation mode includes generating a third sense current at the common sense terminal; and measuring a third parameter generated based on the third sensed current and a temperature of the power switch.

The invention relates to the technical field of semiconductors, and discloses a PN junction material carrier concentration and mobility test method and application. The test method comprises the following steps: carrying out a Hall test on an N-type substrate to obtain the carrier concentration n and mobility mu n of the N-type substrate; p-type ions are doped on the N-type substrate to form a P-on-N structure sample, the sample is subjected to a Hall test, and the Hall coefficient Rh and the resistivity rho are measured; corroding the P-on-N structure sample by the corrosive liquid to form an inclined table surface, and measuring the corrosion depth h; determining the junction depth by using an IV curve, and obtaining the thickness dp of a P layer and the thickness dn of an N-type layer; and substituting into a calculation formula to obtain the P-type carrier concentration p and the P-type carrier mobility mu p. According to the PN junction material testing method, the concentration and mobility of bipolar carriers of electrons and holes can be effectively tested, the testing method is simple, errors are small, and the problems that the P-type concentration cannot be measured due to inaccurate carrier measurement, the testing process is tedious and the like can be effectively solved.

The invention discloses an LED dead pixel detection method, device and equipment based on laser reflection and a medium, and relates to the technical field of LED lamp detection, and the method comprises the steps: controlling a laser light source to irradiate a to-be-detected LED lamp; collecting a reflected light signal; preprocessing the reflected light signal to obtain an input signal; and judging whether the LED lamp is normal based on the input signal. According to the invention, laser reflection detection is adopted to replace traditional optical imaging, the monochromaticity and directivity of laser are utilized to overcome ambient light interference, and a darkroom or complex filtering is not needed. Meanwhile, the combination of the laser light source and the photoelectric sensor significantly reduces the cost of the system, and avoids the use of a high-resolution camera. The laser can focus a micron-sized light spot, and the sub-pixel-level micro structure abnormity can be identified with high precision by analyzing the energy change of a reflected light signal. More importantly, according to the method, non-luminous defects such as packaging cracks and colloid stripping can be synchronously detected by capturing the reflection characteristics of the physical structure of the LED instead of depending on the luminous state of the LED, so that the defect detection accuracy is effectively improved.

The invention provides a component quality detection device of an optical water quality sensor, a plurality of hole sites are arranged on a lower polar plate rotating disk, the first hole site in the plurality of hole sites is used for placing a reference lower polar plate diode, and the rest hole sites in the plurality of hole sites are used for placing a diode to be detected; the lower polar plate first interface and the lower polar plate second interface are arranged below the first hole site; an upper polar plate corresponding to the lower polar plate rotating disc is arranged right above the first hole site, a reference upper polar plate diode is placed on the upper polar plate, and the reference upper polar plate diode and the reference lower polar plate diode are matched for use; and when the upper polar plate first interface and the upper polar plate second interface are in electric shock contact and the lower polar plate first interface and the lower polar plate second interface are in electric shock contact, a reference lower polar plate diode generates a signal, and the signal is acquired by a circuit to obtain a first ADC conversion value. According to the component quality detection device of the optical water quality sensor, the detection standard is set, the test data storage record is recorded, and the working efficiency is improved.

A test method and apparatus for bipolar degradation of a diode, and a device. The method comprises: respectively performing static characteristic tests on a first diode and a second diode, so as to obtain a first static characteristic test result and a second static characteristic test result; setting a pulse test current, a pulse test time and a pulse cycle time, so that, on the basis of the pulse test current, the pulse test time and the pulse cycle time, a power semiconductor pulse current test device performs repeated short pulse current power cycle tests on the first diode under normal temperature conditions, and performs repeated short pulse current power cycle tests on the second diode under high temperature conditions; then, performing static tests, so as to obtain a plurality of static characteristic test results; and on the basis of the static characteristic test results, obtaining a bipolar degradation test result of a diode. By means of the method, bipolar degradation of the diode is tested, and the accuracy and reliability of the test result are improved.