326results about "Diode testing" patented technology

The invention discloses a frequency converter maintenance test system with a protection function, which belongs to the technical field of frequency converter testing and comprises a detection seat, a simulation unit for simulating actual working conditions of a frequency conversion control panel is arranged on the detection seat, and a detection mechanism for detecting a diode in the frequency conversion control panel is further arranged on the detection seat. Through dynamic cooperation of the polarization assembly and the rotary simulation disc, the vibration direction of the vibration source can be flexibly adjusted, so that a multi-dimensional vibration scene possibly encountered in actual work of the frequency conversion control panel is covered, and the problem that vibration source simulation is lacked in a traditional frequency converter testing process is solved; an elastic supporting environment of actual installation is simulated through the air bag spring suspension, vibration energy emission distortion caused by rigid fixation is avoided, the accuracy of a large-capacitance vibration fatigue test is improved, automatic step-by-step wiring operation of detection is achieved through cooperation of the detection driving assembly and the universal test meter, and the overall detection wiring efficiency is improved.

The invention provides a wafer detector, a preparation method thereof and a wafer detection circuit, which can be applied to the technical field of wafer detection. The wafer detector comprises a substrate; the plurality of pairs of electrodes are arranged on the substrate along a first direction; wires respectively led out from each of the plurality of pairs of electrodes on the substrate; a cilia structure is arranged on each electrode in the plurality of pairs of electrodes, a conductive layer electrically connected with the corresponding electrode is arranged on the surface of the cilia structure, and when the cilia structure sweeps the electrode to be detected in the MicroLED wafer from the side direction of the electrode to be detected in the second direction, the conductive layer is electrically connected with the electrode to be detected. The cilia structure has rigidity, so that the cilia structure is in electric contact with the to-be-detected electrode through deformation. When the wafer detector is used for detecting the to-be-detected MicroLED wafer, the wafer detector does not need to be pressed down and lifted up repeatedly, and the to-be-detected MicroLED wafer can be measured at a high speed through horizontal movement only by aligning at an initial position once.

The present disclosure provides an automated repair of LED substrates system in which an automated repair inspection module is used to determine the quality of incoming processing material an automated repair process module is used to process the processing material, an automated repair post-process module is used to inspect the resultant process material for acceptability, and an automated repair historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated repair process module, and an automated repair integration module to update the automated repair process module based upon the results of the automated repair historical module.

Performance evaluation and structural optimization methods for a high-power semiconductor laser chip, and a performance evaluation system for a high-power semiconductor laser chip. The performance evaluation method for a high-power semiconductor laser chip comprises: providing a window on an N-side electrode of a chip to be tested (step 1); keeping the chip in an operating state (step 2); allowing a quantum well active region of the chip to generate spontaneous emission, so that the spontaneous emission is imaged outside the chip (step 3); acquiring, by means of a spectrograph, a spectrum of the spontaneous emission outside the chip and obtaining a two-dimensional distribution of a quantum well temperature of the chip in the operating state; and acquiring, by means of a CCD camera, an image of the spontaneous emission imaging outside the chip and obtaining a two-dimensional distribution of charge carriers in the quantum well of the chip in the operating state (step 4). According to the performance evaluation and structural optimization methods for a high-power semiconductor laser chip, the distributions of the temperature and the charge carrier concentration in the quantum well of the chip to be tested in the operating state in which the resolution is freely adjusted can be obtained. Operations of the methods are convenient, and implementation is simple and easy, thereby efficiently improving the accuracy of an evaluation result.

The invention relates to the field of performance testing, in particular to a conductivity testing system for a diode, which draws a volt-ampere characteristic curve of the diode through a data analysis unit according to voltage at two ends of the diode and current flowing through the diode, and calculates the conductivity of the diode according to a fitting value of the volt-ampere characteristic curve and a standard curve. And calculating the conductivity characterization parameter of the diode according to the maximum temperature difference value of the diode image and the thermal image, judging whether to test the conductivity of the diode or not through the conductivity test unit according to the conductivity characterization parameter of the diode, and adjusting the output voltage of the power supply module. According to the invention, the conductivity of the diode is comprehensively represented through a plurality of indexes, so that the accuracy and reliability of the test are improved. The audio frequency in the process of testing the conductivity of the diode is obtained, and whether the conductivity of the diode is abnormal or not is judged by combining the characterization parameters of the conductivity of the diode.

The present application provides a method for performance evaluation and structure optimization of a high-power semiconductor laser chip, and a system for performance evaluation. Wherein the method for performance evaluation of a high-power semiconductor laser chip comprises: setting a window in an N-surface electrode of a chip to be tested; maintaining the chip to be tested in an operating state, wherein spontaneous radiation is generated in an active area of a quantum well of the chip to be tested; imaging the spontaneous radiation at a position outside the chip to be tested; acquiring, by using a spectrometer outside the chip to be tested, a spectrum of the spontaneous radiation to obtain a two-dimensional distribution of temperature of the quantum well of the chip to be tested in the operating state; and acquiring, by using a CCD camera outside the chip to be tested, an image of the spontaneous radiation to obtain a two-dimensional distribution of carriers in the quantum well of the chip to be tested in the operating state. The method for performance evaluation and structure optimization of a high-power semiconductor laser chip provided by the present application can get the temperature distribution and the carrier concentration distribution of the chip to be tested in the operating state with a resolution that is freely adjustable, the operation is convenient and easy to implement, and the accuracy of evaluation results is effectively improved.

Proposed are a test device and a manufacturing method of the test device capable of testing a test object that is provided with an electrode which has a size and / or a pitch distance ranging from 1 to 100 micrometers (μm).

The present teachings relate to a method for identifying reusable components of a vehicle lamp assembly, the method including: i) performing an electric circuit functionality test on each component of a plurality of components of the vehicle lamp assembly; ii) performing an illumination test on each light source within the vehicle lamp assembly; iii) identifying which of the components of the plurality of components pass and / or fail the electric circuit functionality test; and iv) identifying which light sources pass and / or fail the illumination test.

The invention discloses a femtosecond pulse laser modulation-based GaN-based micro light-emitting diode test system, which comprises a femtosecond pulse laser excitation module, a first detection light path, a to-be-tested GaN-based micro light-emitting diode, a photovoltage detection and bias control module, a photoluminescence detection module and a control module, the control module is configured to control the excitation power and the external bias voltage of the femtosecond pulse laser excitation module, and synchronously collect a photoluminescence spectrum signal and a photovoltage signal; according to the excitation power, the external bias voltage, the photoluminescence spectrum signal and the photovoltage signal, the competition relation between carrier drift extraction and local radiation recombination under different bias electric field conditions is obtained, and therefore an experimental basis is provided for structural design and working bias optimization of the GaN-based micro light-emitting diode device to be tested.

A light emitting element inspection method including: forming a plurality of light emitting element rods by etching a plurality of semiconductor material layers stacked on a growth substrate; forming a protective layer covering a portion of a top surface and a portion of side surfaces of the plurality of light emitting element rods and a contact electrode on the protective layer; forming a metal layer on the side surfaces of the plurality of light emitting element rods and on a portion of the growth substrate on which none of the plurality of light emitting elements rods is located; forming a contact pad connected to the metal layer on the growth substrate; and applying a test power to the contact electrode and the contact pad.

Implementations described herein are related to a diode driver that recirculates residual current from an operating current pulse in an inductor. Such recirculation produces a diagnostic current pulse to a diode array for measuring a voltage drop across a portion of the array. For example, after a controller charges an inductor of a diode driver to deliver operating current pulses to a portion of a diode array for illumination, the controller causes a residual current to remain and recirculate in the inductor. In some implementations, in response to the recirculating current reaching a monitoring threshold, the controller delivers a monitoring pulse to the portion of the diode array to measure a voltage drop across the portion of the diode array. In some implementations, the controller may infer defectivity in the portion of the array from such voltage drop measurements over time.

A method for operating an optoelectronic system, in particular an LED system with at least one LED unit, is provided, comprising: Receiving voltage values ​​of an LED voltage drop across the at least one LED unit; Determining a voltage change of the LED voltage dropped across the at least one LED unit based on the voltage values ​​of the LED voltage; Determining a time interval during which the voltage change of the LED voltage dropping across the at least one LED unit occurs between a first predefined limit value and a second predefined limit value; Executing an operational function of the optoelectronic system based on the determined time interval. Furthermore, an optoelectronic system is provided.

The invention provides a detection system and method for an avalanche photodiode, and the system comprises an arbitrary signal generator, a laser, an adjustable attenuator, a time-to-digital converter and a test processor, the first output end of the arbitrary signal generator is connected with the laser, the laser is connected with the adjustable attenuator, and outputs a light pulse to the adjustable attenuator; the adjustable attenuator inputs the attenuated optical signal to the input end of the avalanche photodiode to be tested; a second output end of the arbitrary signal generator is connected with a time-to-digital converter; the time-to-digital converter receives an output signal of the avalanche photodiode to be tested; the test processor is connected with a to-be-tested avalanche photodiode and is used for debugging and configuring parameters of the to-be-tested avalanche photodiode; a to-be-detected avalanche photodiode is placed on the detection tool, and the detection tool and the semiconductor refrigerator are packaged together. According to the invention, the compatibility and integration degree of the system can be improved, the stability of the system is improved, and the sensitivity to detected photons is high.

The invention discloses a Mini LED backlight source testing method based on FCT testing equipment, relates to the field of backlight source testing, and solves the problem that backlight source testing efficiency is low at the present stage. The method comprises the steps that optical performance testing is conducted on a Mini LED screen, and a brightness abnormal signal or a color abnormal signal of the Mini LED screen is generated; randomly sampling and selecting a plurality of lamp beads in the Mini LED screen, marking the lamp beads as light-emitting diodes to be tested, connecting the plurality of light-emitting diodes to be tested to obtain a light-emitting diode group to be tested, and fixing the light-emitting diode group to an FCT test machine; performing electrical parameter testing on the to-be-tested light-emitting diode group to generate a power supply abnormal signal or a short circuit abnormal signal of the to-be-tested light-emitting diode group; and displaying a brightness abnormal signal, a color abnormal signal, a power supply abnormal signal and a short circuit abnormal signal of the Mini LED screen. According to the invention, the Mini LED backlight source is efficiently and accurately tested.

The invention discloses a weak signal acquisition and processing method for an AlGaN solar-blind APD, and relates to the technical field of signal acquisition and processing, and the method comprises the steps: receiving a solar-blind ultraviolet light signal through an APD, and converting the solar-blind ultraviolet light signal into a current signal; the current signal is input to the transimpedance amplification unit, the current signal is converted and amplified into a voltage signal, and the transimpedance amplification unit is set through the intensity of the current signal; the amplified voltage signal is input into an analog-to-digital conversion unit for analog-to-digital conversion, and a conversion result is transmitted to an embedded processing unit; and the embedded processing unit is used for carrying out signal processing on the conversion result, and the conversion result is transmitted to an upper computer through a communication interface to generate visual display. The technical problems that in the prior art, weak ultraviolet signal collecting and processing efficiency is low, and signals are prone to losing or noise superposition are solved, and the technical effects that signal collecting precision and efficiency are improved, and signal amplifying and processing capacity is enhanced are achieved.

The invention relates to an evaluation system. A method includes evaluating a first parameter, a second parameter, and a third parameter of a power switch. The first evaluation mode includes receiving a first sense current from the power switch at the common sense terminal; and measuring a first parameter during a switching event of the power switch based on the first sensed current. The second evaluation mode includes outputting a second sense current from the common sense terminal to the power switch; and measuring a second parameter dependent on a current flow of the second sense current through the power switch, the current flow dependent on an electrode voltage present at the drain or collector of the power switch. The third evaluation mode includes generating a third sense current at the common sense terminal; and measuring a third parameter generated based on the third sensed current and a temperature of the power switch.

The invention discloses an LED dead pixel detection method, device and equipment based on laser reflection and a medium, and relates to the technical field of LED lamp detection, and the method comprises the steps: controlling a laser light source to irradiate a to-be-detected LED lamp; collecting a reflected light signal; preprocessing the reflected light signal to obtain an input signal; and judging whether the LED lamp is normal based on the input signal. According to the invention, laser reflection detection is adopted to replace traditional optical imaging, the monochromaticity and directivity of laser are utilized to overcome ambient light interference, and a darkroom or complex filtering is not needed. Meanwhile, the combination of the laser light source and the photoelectric sensor significantly reduces the cost of the system, and avoids the use of a high-resolution camera. The laser can focus a micron-sized light spot, and the sub-pixel-level micro structure abnormity can be identified with high precision by analyzing the energy change of a reflected light signal. More importantly, according to the method, non-luminous defects such as packaging cracks and colloid stripping can be synchronously detected by capturing the reflection characteristics of the physical structure of the LED instead of depending on the luminous state of the LED, so that the defect detection accuracy is effectively improved.

A test method and apparatus for bipolar degradation of a diode, and a device. The method comprises: respectively performing static characteristic tests on a first diode and a second diode, so as to obtain a first static characteristic test result and a second static characteristic test result; setting a pulse test current, a pulse test time and a pulse cycle time, so that, on the basis of the pulse test current, the pulse test time and the pulse cycle time, a power semiconductor pulse current test device performs repeated short pulse current power cycle tests on the first diode under normal temperature conditions, and performs repeated short pulse current power cycle tests on the second diode under high temperature conditions; then, performing static tests, so as to obtain a plurality of static characteristic test results; and on the basis of the static characteristic test results, obtaining a bipolar degradation test result of a diode. By means of the method, bipolar degradation of the diode is tested, and the accuracy and reliability of the test result are improved.

The invention relates to the technical field of electron Schottky diode testing methods, in particular to a method for verifying that a Schottky diode reaches junction temperature through high-temperature reverse bias. Transient leakage current testing and series resistor voltage division are carried out on the detected Schottky diode in a nominal junction temperature environment to prevent thermal collapse, and whether the nominal junction temperature is reached or not is finally judged by dynamically adjusting the environment temperature and the reverse voltage and monitoring the change of the leakage current and the voltage at the two ends of the Schottky diode in real time. The method can accurately verify the junction temperature state of the Schottky diode in the high-temperature reverse bias test, effectively avoids thermal runaway failure, is suitable for batch detection, and has the characteristics of simple operation and high reliability.

A method for non-contact detection. The method includes providing a semiconductor device. The semiconductor device has an epitaxial stack, a first electrode and a second electrode connected to the epitaxial stack. The method further includes applying a microwave to the first electrode to cause the semiconductor device to emit light and detecting the light emitted from the semiconductor device.

Provided is a testing apparatus including: a light emission control unit which causes a plurality of light emitting elements to be tested to emit light; a light measurement unit which receives the light emitted from the plurality of light emitting elements and measures wavelengths of the received light; and a determination unit which determines whether there is an abnormality in at least one light emitting element on the basis of intensity distributions of the wavelengths of the light, which is emitted from the plurality of light emitting elements, measured by the light measurement unit. The testing apparatus may further include: a light source; an optical system which irradiates the plurality of light emitting elements with light emitted from the light source; and an electrical measurement unit which measures a photoelectric signal obtained by each of the plurality of light emitting elements photoelectrically converting the light radiated by the optical system.

The present invention discloses a dual-pulse test system, which is configured to include: a load inductor, a test power supply is connected to a power device under test through the load inductor; a first freewheeling device, after the power device under test is tested, it forms a freewheeling loop with the load inductor; a pulse generator, which is used to provide the dual pulses required for testing the power device under test; and a failure protection circuit, when the power device under test is in a failure state, it cuts off the test power supply and constructs a freewheeling loop to make the loop current no longer increase. The present invention is configured with a failure protection circuit, which can timely cut off the power supply when the power device under test is in a failure state, and can form a freewheeling loop to realize that the loop current no longer increases, preventing the device from being burned out due to the failure of the power device under test, and playing a protective role.

A driver circuit may include an optical emitter. The driver circuit may include a first switch that, in a closed state, is to cause charging of an inductive element, and when transitioning from the closed state to an open state is to cause discharging of the inductive element to charge a capacitive element. The driver circuit may include a second switch that in a closed state is to cause discharging of the capacitive element to provide an electrical pulse to the optical emitter. The driver circuit may include a signal generator configured to generate a first signal for controlling the open state and the closed state of the first switch, and a pulse shortening element configured to shorten a pulse width of the first signal to generate a second signal for controlling the open state and the closed state of the second switch.

The present application is to solve the problem that the optical characteristics of a plurality of LEDs cannot be inspected at the same time by a method of causing one of a pair of LEDs to emit light and causing the other to receive light, and using the current value of the current output by the photoelectric effect to inspect the optical characteristics of the LEDs. To solve the above problem, the present application proposes a test device provided with: an electrical connection portion electrically connected to the terminals of each of a plurality of LEDs that are test subjects; a light source portion that irradiates light to the plurality of LEDs at the same time; a measurement portion that measures a photoelectric signal that is photoelectrically converted by each of the plurality of LEDs with respect to the light irradiated by the light source portion and output via the electrical connection portion; and a determination portion that determines the good or bad of each of the plurality of LEDs based on the measurement result of the measurement portion.

Method for characterizing a batch of gain chips, each having a first reflective face and a second transparent face, the method comprising, for each gain chip: positioning the gain chip (99) with the second face facing towards a reflective diffraction grating (6); supplying the gain chip (99) with a plurality of first and second values of supply current so that the gain chip (99) emits a respective first light beam (60) for each first value of supply current and a respective second light beam (60') for each second value of supply current; making impinge each first light beam (60) on the reflective diffraction grating (6) in a first angular position so as to generate a respective first zero-order diffracted beam (61) and a respective first first-order diffracted beam (62) entering the gain chip (99), and each second light beam (60') on the reflective diffraction grating (6) in a second angular position so as to generate a respective second zero-order diffracted beam (63) and a respective second first-order diffracted beam (64) not entering the gain chip (99); measuring a respective first value of optical power of each first zero-order diffracted beam (61), and a respective second value of optical power of each second zero-order diffracted beam (63); associating each first value of optical power with the respective first value of supply current, and each second value of optical power with the respective second value of supply current; as a function of pairs of first values of supply current and of optical power and as a function of a first predetermined mathematical correlation, calculating a respective differential quantum efficiency, and, as a function of pairs of second values of supply current and of optical power and as a function of a second predetermined mathematical correlation, calculating a respective modal gain coefficient and a respective carrier density at transparency; verifying that the respective differential quantum efficiency, the respective modal gain coefficient, and the respective carrier density at transparency satisfy a respective predetermined selection criterion.

An inspection system includes an excitation light source, a voltage-sensing film, an illumination light source, an image capture device. The excitation light source provides an excitation beam to light-emitting diodes to generate open-circuit voltages. The voltage-sensing film is at a top side of the light-emitting diodes and includes a voltage-sensing medium layer and a first electrode layer. The first electrode layer is in the voltage-sensing medium layer to provide a gain effect of the open-circuit voltages, so that the voltage-sensing medium layer senses the open-circuit voltages, and a display of the voltage-sensing medium layer is changed with a portion or all of the open-circuit voltages. The illumination light source provides an illumination beam to the voltage-sensing film to generate a sensing image according to a display change. The image capture device is on a transmission path of the sensing image and receives the sensing image to generate an inspection result.

In a method of manufacturing a display device, the method includes providing a carrier module including a carrier wafer and light-emitting elements, forming a planarization layer between the light-emitting elements, forming a transparent electrode layer on the planarization layer, inspecting the light-emitting elements, and removing the planarization layer and the transparent electrode layer.

This disclosure relates to probe cards and methods for inspecting light-emitting diodes (LEDs) using the same. According to one aspect of this disclosure, the probe card includes: a probe substrate; a photodetector unit disposed on one surface of the probe substrate; and an electrode unit disposed on the photodetector unit and including a first sheath electrode and a second sheath electrode, the second sheath electrode including a through-hole overlapping the photodetector unit. Thus, the through-hole is formed in the second sheath electrode to allow light from the LED to be incident on the photodetector unit, and the electrode unit and the photodetector unit can simultaneously inspect the LED.

The invention provides a cartridge comprising a socket of insulative material and having upper and lower sides and a formation on the upper side to hold an electronic device; a set of contacts held in the socket to connect to the electronic device; a set of terminals connected to the set of contacts held by the socket; a circuit board, the set of terminals connected to the set of contacts being connected to a set of contacts on the circuit board; a lid; a detector mounted to the lid, the lid being movable to be positioned over the socket with the detector located in a position to detect a feature of the electronic device when and due to power being supplied through at least one of the set of terminals held by the socket to the electronic device; and a measurement channel connecting the detector to an interface on the circuit board.