409 results about "Forward voltage" patented technology

According to the back contact battery and the preparation method thereof provided by the invention, doping elements penetrate through the third doping region between the first doping region and the second doping region through high-temperature diffusion to form an electric leakage channel, so that a new back surface structure of the back contact battery is provided. The third doped region is formed by mixing the doping elements of the first doped region and the doping elements of the second doped region, doping of the two impurities is completed at a high temperature in one step, so that an electric leakage channel of an overlapping region is not generated, and the overlapping region of the two doped semiconductor layers with opposite conduction types in the thickness direction of the semiconductor substrate is removed, so that the conductivity of the semiconductor substrate is improved. Therefore, electric leakage loss of the back contact battery in a forward voltage area can be controlled, current in the electric leakage channel is introduced to the grid line of the first electrode or the second electrode through the electric leakage channel or the connecting electrode, the hot spot risk of the back contact battery is reduced, the safety performance of the back contact battery is effectively improved, and the service life of the back contact battery is prolonged. And the back contact battery has relatively high working performance.

The invention provides an LED lamp adaptive speed regulation heat dissipation method and system based on real-time junction temperature monitoring. The method comprises the following steps: S100, acquiring a PWM signal or an analog signal of an LED driving command signal in real time; s200, on the basis of the change of the driving instruction signal, feedforward prediction is carried out by using a dynamic thermal inertia mapping model, and a feedforward fan control quantity is generated; s300, LED junction temperature is monitored in real time through a forward voltage method, and feedback fan control quantity is generated through a feedback controller according to the deviation between the real-time junction temperature and the target junction temperature; and S400, synthesizing the feedforward control quantity and the feedback control quantity to generate a fan PWM control signal, outputting the fan PWM control signal to a fan driving circuit, and adjusting the rotating speed of the cooling fan. According to the method, driving signals and junction temperature information are processed in parallel, and feedforward and feedback control is combined, so that self-adaptive accurate regulation and control are realized, thermal load change is quickly responded, system lag is effectively inhibited, and LED heat dissipation performance is optimized.

A SiC trench MOSFET with an embedded junction Schottky barrier diode (JBSD) having P-shield (PS) regions surrounding bottoms of source-body-Schottky contact (SBSC) trenches for gate oxide electric-field and switching loss reductions is disclosed. A source metal connects with the PS regions and the JBSD directly. Sidewall P (SP) regions are formed along a portion of sidewalls of the SBSC trenches to improve a tradeoff between a drain-source leakage current of the SiC trench MOSFET and a forward voltage of the JBSD. The device further comprises an N-type shield region formed below each of gate trenches for gate oxide electric field strength and specific on-resistance reductions.

The invention relates to the field of semiconductor device testing, and discloses a power device thermal resistance testing method and power device thermal resistance testing equipment, and the method comprises the following steps: controlling an environment to rise to a first preset temperature in a temperature gradient manner, and sequentially applying a calibration current to a power device at each temperature gradient to test a first forward voltage drop of the power device; calibrating the power device according to the temperature value of each temperature gradient and the first forward voltage drop value corresponding to each temperature gradient to obtain a temperature-voltage drop curve; controlling the environment temperature to be a second preset temperature, applying a first rated power to control the power device to reach a heat balance state, applying a calibration current to the power device to test a second forward voltage drop of the power device, and measuring the shell temperature of the power device; and obtaining the thermal resistance of the power device according to the temperature-voltage drop curve, the second preset temperature, the second forward voltage drop, the first rated power and the shell temperature of the power device. According to the invention, the problem of inaccurate thermal resistance test of the power device is solved.

The invention relates to a driving method and system for an adjustable light source LED, and the method comprises the steps: collecting the input voltage and target brightness of a light source in real time, and calculating an initial current set value of the light source; dynamically switching a constant-current dimming strategy and a linear dimming strategy according to the dimming threshold frequency of the light source; feeding back the real-time temperature of the light source through a temperature sensor, and performing temperature compensation on the driving current of the light source to obtain compensation current; determining the driving voltage of the light source by combining the light source forward voltage and the compensation current; and the duty ratio is adjusted in real time based on PID closed-loop control to obtain a real-time duty ratio, and the light source matching target brightness is adjusted based on the real-time duty ratio and the driving voltage. According to the invention, the accuracy and reliability of LED light source adjustment can be improved.

The present application relates to a trench-type Schottky barrier diode and a manufacturing method therefor. The trench-type Schottky barrier diode comprises: a substrate (170), having a first conductivity type; a first conductivity type layer (160), located on the substrate (170), the doping concentration of the first conductivity type layer (160) being less than the doping concentration of the substrate (170); a trench structure, extending from the front surface of the first conductivity type layer (160) to the substrate (170), the trench structure comprising a conductive material (140) and further comprising a dielectric layer (130) surrounding the conductive material (140) from the side surface and the bottom surface; a Schottky barrier layer (120), located on the first conductivity type layer (160) and on the trench structure; and a second conductivity type region (150), located below the trench structure, the top of the second conductivity type region (150) being in direct contact with the bottom of the dielectric layer (130), and the bottom of the second conductivity type region (150) being spaced apart from the substrate (170) by part of the first conductivity type layer (160). The present application can maintain reverse withstand voltage characteristics while reducing the on-state forward voltage drop of devices.

The invention belongs to the field of power device driving, particularly relates to the technical field of crosstalk suppression, and more particularly relates to a crosstalk suppression driving circuit. Through cooperative work of the driving module, the detection module, the buffering module and the clamping module, crosstalk is effectively suppressed while the switching speed is ensured. The driving module ensures normal switching action of the power device; the detection module converts the drain voltage change rate into a detection signal in real time, and recognizes the crosstalk risk in advance; the buffer module suppresses forward crosstalk by absorbing grid forward voltage spikes; the clamping module immediately conducts a low-impedance path from the grid electrode to the negative power supply when the detection signal exceeds a threshold value, and negative crosstalk is quickly eliminated. According to the design, the suppression circuit is only activated when the voltage change rate exceeds the standard, switching delay caused by a traditional fixed buffer circuit is avoided, accurate and rapid crosstalk suppression can be achieved, and finally the suppression effect and the system reliability are remarkably improved while the high-speed switching performance is maintained.

A bidirectional crosstalk suppression driving circuit suitable for a wide bandgap power semiconductor device comprises a push-pull circuit and a crosstalk suppression auxiliary circuit, the push-pull circuit is connected with the crosstalk suppression auxiliary circuit, and the crosstalk suppression auxiliary circuit is connected with a grid electrode and a source electrode of the power semiconductor device. The push-pull circuit is used for generating a driving voltage signal to drive a power semiconductor device. When the power semiconductor device is subjected to positive crosstalk, positive voltage is generated through a negative voltage capacitor in the crosstalk suppression auxiliary circuit, and the influence of negative overvoltage generated on a driving resistor when the positive crosstalk occurs is reduced; when the power semiconductor device is subjected to negative crosstalk, gate equivalent driving impedance is reduced through an RD auxiliary branch in the crosstalk suppression auxiliary circuit, and reverse overvoltage caused by negative crosstalk is reduced. The circuit has compatibility and economical efficiency, and is simple in structure and easy to operate. The method is of great significance in improving the turn-on and turn-off reliability of a power semiconductor device and guaranteeing stable operation of a system.

The invention relates to the field of static frequency converters, and discloses a static frequency converter protection system comprising a control unit used for generating a control signal and performing bidirectional communication with a valve control unit through an optical fiber; the thyristor control unit obtains energy through a circuit and sends a first return signal after energy obtaining is completed; and the valve control unit is used as a bridge between the control unit and the thyristor control unit and is used for receiving and collecting the first return signal. When the forward voltage of the thyristor driven by the thyristor control unit exceeds a set protection value, the thyristor control unit triggers the thyristor emergently, and returns an overvoltage protection signal to the valve control unit at the same time. The valve control unit gathers overvoltage protection signals, and when the number of the thyristors subjected to overvoltage protection at the same time is larger than a tripping constant value set by the valve control unit, the valve control unit sends a tripping request signal to the control unit to inform the control unit of interlocking tripping.

The invention discloses a method, a device, equipment and a medium for on-line measurement of a flutter noise effect of a radio frequency cavity. The method comprises the following steps: acquiring an original forward voltage Vf * of the radio frequency cavity; performing calibration and normalization processing on the original forward voltage Vf * to obtain a forward voltage Vf; according to the calibrated and normalized forward voltage Vf, cavity detuning caused by a flutter noise effect is calculated; performing preliminary time-frequency analysis on the flutter noise according to the cavity detuning to obtain a frequency spectrum of the cavity detuning; decomposing the cavity detuning frequency spectrum, and accumulatively calculating the RMS of the time domain signal and the contribution value of each frequency component to the cavity detuning overall RMS from low frequency to high frequency; and based on the contribution value of the overall RMS of the cavity detuning, judging the frequency component of the cavity detuning caused by the flutter noise. Therefore, the invention can be widely applied to particle accelerators.

The invention provides a DC-DC forward boost-buck power conversion circuit based on cascaded Cuk topologies, and relates to the technical field of power electronic conversion, the circuit is mainly formed by cascading two Cuk topologies sharing one inductor, and the circuit also comprises a power supply end, a load end and a same-frequency driving signal generator. The same-frequency driving signal generator controls the two power switch tubes in the Cuk topology through a same-frequency signal, and the output voltage is adjusted by adjusting the duty ratio. The circuit not only keeps the advantage of continuous input and output current of a traditional Cuk circuit, but also converts the polarity of the output voltage from the reverse direction to the forward direction, and meanwhile, the voltage gain is remarkably improved, so that forward voltage conversion can be efficiently and smoothly realized. The circuit structure has the characteristics of high gain, forward output, continuous current, simple control and the like, and is suitable for occasions requiring high-efficiency and high-quality electric energy conversion, such as new energy power generation and energy storage, electric automobiles, precision industry and the like.

The invention relates to a power supply circuit with a monitoring function comprising a first current branch (2) with a first controllable section (20) and at least one load (21) arranged in series therewith, and a second current branch (3) with a second controllable section (30) and at least one load (31) arranged in series therewith. A controllable converter (4) is connected to the first and second current branches (2, 3) to supply a total current. A control circuit (5) with a control input, which is connected to the set input (10), wherein the control circuit (5) is coupled to the first controllable section (20) to adjust a current through the first current branch (2) depending on a provided first set signal.The second controllable branch (30) is coupled to the first current branch (2) and to the set input (10) in a dependent control loop, which is influenced by the current flowing in the first circuit (2) and the forward voltage of the two loads (21 and 31). It is configured to control a current through the second current branch (3) depending on an operating state through the first current branch (2) and a second set signal. Furthermore, a current-controlled monitoring circuit is provided, which is connected to a node between the respective current branch and the load connected in series with it. This circuit is configured to generate an error signal in response to a predefined deviation of one of the currents flowing into the current-controlled monitoring circuit, which reflects the state of the respective load.

An optoelectronic module includes at least one light emitting diode that emits light with a luminous intensity during operation. The optoelectronic module also includes an integrated circuit which sets an operating current of the light emitting diode and measures a value of the forward voltage of the light emitting diode during operation. The integrated circuit determines a degradation of the light emitting diode by measuring the value of the forward voltage and increases or decreases the electrical operating current as a function of the measured value of the forward voltage, such that a change in the luminous intensity due to the degradation is at least partially compensated. The integrated circuit or a measurement-control-unit for controlling the integrated circuit includes a memory in which calibration data is stored. The calibration data comprises a value of the forward voltage of the light emitting diode as a reference value for determining the degradation.

The invention relates to the technical field of lamp bead active heat dissipation, and discloses an LED lamp bead active heat dissipation system and method, and the method comprises the steps: injecting a micro-current pulse into a PN junction of an LED chip through a constant current source, collecting a forward voltage drop sampling value, and collecting a substrate temperature sampling value; calculating a junction temperature value based on the forward voltage drop sampling value, and calculating a junction-to-case temperature difference value and a substrate temperature rise rate value; setting an early-warning state identifier when the junction-to-case temperature difference value exceeds an early-warning threshold value and the duration meets a preset duration, setting an alarm state identifier when the junction-to-case temperature difference value exceeds an alarm threshold value, and shielding thermal runaway detection when the substrate temperature rise rate value exceeds an environment thermal shock threshold value and the junction-to-case temperature difference value is smaller than an environment exclusion threshold value; when the state identification is the normal state identification, calculating a first compensation current value; and when the state identification is the early warning state identification, a second compensation current value is calculated, and when the state identification is the alarm state identification, an alarm current limiting value is calculated, so that the working stability and long-term reliability of the LED in a wide temperature range are ensured.

The invention relates to the technical field of data processing, in particular to a high-frequency diode conduction loss characteristic test system, which comprises an acquisition module, a first judgment module, a second judgment module, a first determination module, a second determination module, an adjustment module and an output module. According to the method, multiple key data are collected, rapid screening is carried out according to forward voltage and reverse recovery charges, then, hidden defects of abnormal dynamic relevance of parameters are analyzed and identified by introducing shell temperature, and finally, a high-loss diode is obtained; the trend abnormity is identified by using the space-time distribution characteristics of the high-loss diode, and the loss reason is accurately detected through the voidage fluctuation mode; and meanwhile, based on a self-adaptive adjustment mechanism fed back by the test accuracy, a test report is finally output, so that the problems of low identification accuracy of the high-loss diode and low detection accuracy of loss reasons caused by excessive dependence on static parameters and incapability of adapting to complex and changeable working conditions are effectively solved.

An MOS junction barrier Schottky diode relates to the technical field of power semiconductor devices. The N-type substrate, the N-type epitaxial layer, the deep P region, the trench gate, the trench gate oxide layer, the conductive enhancement region and the isolation oxide layer are arranged between the cathode metal and the anode metal, the lower surface of the N-type substrate is in contact with the cathode metal, the upper surface of the N-type substrate is in contact with the lower surface of the N-type epitaxial layer, and the upper surface of the N-type epitaxial layer is in contact with the P region. The conductive enhancement region is arranged on the outer surface of the trench gate oxide layer and is in contact with the N-type epitaxial layer, and a part of the trench gate oxide layer, the conductive enhancement region, the isolation oxide layer and a part of the deep P region are respectively in contact with a part of the anode metal. According to the MOS junction barrier Schottky diode structure, the groove gate MOS structure is inserted into the adjacent P region of a traditional junction barrier Schottky (JBS) diode, so that the carrier density at a channel is improved, the channel resistance is reduced, and the reverse electric leakage characteristic and the forward voltage drop are further improved.

A temperature sensor device is capable of measuring minute temperature changes while being manufactured at low cost without needing a high performance IC tester. A temperature sensor device includes a temperature sensor circuit 2 and a temperature sensor 1. The temperature sensor 1 includes a PN junction element 15 which is a temperature sensing element, a variable current source which supplies different forward currents of at least two values to the PN junction element 15 and a constant voltage source 16 which outputs a constant voltage having the same temperature properties as a forward voltage of the PN junction element 15.

A semiconductor device is capable of generating a correct over-temperature detection signal for an output transistor even if a reverse current from a load to the output transistor occurs. A temperature sensing diode is formed on the semiconductor substrate adjacent to the power transistor, and generates a forward voltage whose magnitude reflects the temperature of the output transistor. The over-temperature detection circuit detects an over-temperature state of the power transistor by comparing a magnitude of the forward voltage with a reference voltage, and asserts an over-temperature detection signal. The reverse current detection circuit detects the occurrence of a reverse current in the power transistor and asserts a reverse current detection signal during the occurrence. The semiconductor device performs processing such as masking an over-temperature detection signal using a reverse current detection signal.

An LED driver configured to control a LED fixture comprising a plurality of LED groups is described, each LED group comprising at least one LED forming a series connection with a switch, wherein the plurality of LED groups are arranged in a parallel connection, the LED fixture further comprising a capacitor arranged in a parallel connection to the plurality of LED groups, the LED driver comprising:a power converter for converting an input power from a power source to a current which is provided to the plurality of LED groups;a control unit configured to control the power converter to provide the current to the plurality of LED groups, and wherein the control unit is further configured tocontrol an operation mode of the switch of the LED group between a nominal mode, wherein the switch operates in a closed nominal state or an open nominal state, anda transition mode, wherein the switch operates in a semi-closed state, wherein a gate to source voltage of the switch of the LED group is lower than the gate to source voltage of the respective switch when operated in the nominal mode,switch the current from flowing through a first LED group to flowing through a second LED group, wherein the first LED group has a higher forward voltage than the second LED group, by switching the switch of the first LED group in the open nominal state and the switch of the second LED group in the semi-closed state during a transient period.

To provide a nitride semiconductor light emitting element that can be driven at low current and have reduced forward voltage.SOLUTION: It has a first n-type semiconductor layer, a first p-type semiconductor layer disposed on the first n-type semiconductor layer and in contact with the first n-type semiconductor layer, a first superlattice layer disposed on the first p-type semiconductor layer and containing p-type impurities, an active layer disposed on the first superlattice layer, a second n-type semiconductor layer disposed on the active layer, a first electrode electrically connected to the first n-type semiconductor layer, and a second electrode electrically connected to the second n-type semiconductor layer.SELECTED DRAWING: Figure 1

Solid state light-emitting devices and more particularly arrangements of multiple-junction light-emitting diode (LED) chips in LED packages and corresponding LED displays are disclosed. Multiple-junction LED chips are arranged in LED packages with single-junction LED chips. Multiple-junction LED chips are configured to have forward voltages the same or similar to single-junction LED chips in the same LED package. Common anode or common cathode arrangements for multiple-junction and single-junction LED packages are disclosed. Multiple-junction LED chips configured to provide different emission wavelengths than single-junction LED chips while also having same or similar forward voltages are disclosed.

The invention discloses a groove SiC MOSFET device and a preparation method thereof. The preparation method comprises the following steps: epitaxial growth; performing P-type ion implantation for the first time; performing first-stage groove etching; performing N-type ion implantation; implanting P-type ions for the second time; carrying out second-stage groove etching; growing gate oxide, polycrystalline silicon and an interlayer insulating layer; carrying out metal deposition; the beneficial effects of the invention are that the multi-stage trench structure is combined with the plane gate and the trench gate, so that the channel density is increased, the current capability is provided, and the conduction loss is reduced; the MPS diode structure is integrated, the forward voltage drop of the body diode is reduced, the discharge capacity is improved when inrush current occurs in the circuit, the reverse follow current capacity can be improved through the parallel Schottky diode structure, and electronic elements needed by a peripheral circuit are reduced; by integrating the built-in field plate structure, the electric field concentration effect at the bottom of the trench gate is effectively relieved.

The invention discloses a power diode based on an MOF, a preparation method, a 3D chip packaging method and application, belongs to the technical field of electronic materials and power devices, and particularly relates to a composite structure based on an n-Si substrate / an (n-Si)-(ZIF-8) composite layer / an Ag layer, preparation, a 3D chip packaging method and application of the composite structure in the field of power devices. The reverse withstand voltage of the power diode based on the n-Si substrate / ''(n-Si)-(ZIF-8) composite layer'' / Ag layer composite structure exceeds 200V, the forward conduction voltage of the power diode is 0.25-1.5 V, the reverse bias voltage applied to the power diode is 0-200V, the reverse leakage current is basically not increased along with the increase of the reverse bias voltage, and the reverse leakage current is 0.2-2.1 mA (at the reverse voltage-100V). Compared with a conventional power diode based on an n-Si substrate / Ag layer Schottky structure, the performance of the power diode provided by the invention has the advantages that although the forward voltage is basically unchanged, the reverse voltage is increased by 80-400%, the reverse saturation current is reduced by 50-800%, and the highest yield reaches 95%.

The application discloses a kind of semiconductor chip epoxy resin encapsulation nanoscale gap control method, it is related to semiconductor packaging technical field.The present application includes: S1, wafer is taken out from vacuum packaging and is carried out dicing processing, plasma cleaning machine is cleaned, and is carried out and leads wire;S2, after wire bonding, injection molding is carried out;S3, nanoscale gap growth film method;S4, confirm growth dense film;S5, using 150 DEG C baking 55-65 minutes, ensure that internal water vapor is normally removed;S6, normal arrangement laser overflow glue and plating process, surface water removal normal baking after plating is completed;S7, after cutting rib, arrange electrical characteristic parameter test, leakage current IR, forward voltage drop VF, VB avalanche voltage.The present application solves the problem of product reliability caused by the fact that the pressure of plastic encapsulating material and injection molding equipment is not enough due to small packaging, which is beneficial to improve the problem of high-quality miniaturization of industrial equipment, and reduces the influence of device problems on system.

The invention belongs to the technical field of semiconductor material processing, and particularly relates to a monocrystalline silicon preparation method for improving forward voltage drop of a power device, the power device and monocrystalline silicon, and the method comprises the following steps: when a monocrystalline silicon rod is drawn by a czochralski method, the growth crystal orientation is 1t by controlling crystal pulling parameters and cooling parameters in an equal-diameter process; 111gt, 111gt; the silicon single crystal rod, the crystal pulling parameters and the cooling parameters are configured as follows: interstitial oxygen precipitation can be inhibited to form silicon dioxide precipitation, so that the volume microdefect density in the grown silicon single crystal is lower than a preset threshold value, and the method provided by the invention inhibits the interstitial oxygen precipitation process by reasonably configuring the crystal pulling parameters and the cooling parameters, so that the yield of the silicon single crystal is improved. According to the present invention, the silicon dioxide deposition formation is reduced, such that the volume micro-defect density in the grown monocrystalline silicon is lower than the preset threshold value, and when the monocrystalline silicon is applied to the ultra-fast recovery diode product, the forward voltage drop value VF can be reduced so as to be within the range of 1.3-1.7 V so as to meet the customer requirements.

A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

A light source includes a first light-emitting unit including one or more first light-emitting elements connected in series, a second light-emitting unit including second light-emitting elements connected in series. The number of the second light-emitting elements is greater than that of the one or more first light-emitting elements. The first and second light-emitting units are connected in parallel to each other. A first light emission peak wavelength of the first light-emitting element is different from a second light emission peak wavelength of the second light-emitting element. A second forward voltage of the second light-emitting element is lower than a first forward voltage of the first light-emitting element. An absolute value of a difference between a forward voltage of the first light-emitting unit and a forward voltage of the second light-emitting unit is lower than the second forward voltage of the second light-emitting element.

The utility model relates to the technical field of medical equipment, and particularly discloses a bipolar nanosecond pulse synchronous output circuit and ablation equipment, which comprise a positive pulse output circuit and a negative pulse output circuit, the positive pulse output circuit comprises a positive pulse charging unit, a positive pulse output control unit, a positive pulse transmission unit and a positive pulse output electrode wire which are electrically connected in sequence; the negative pulse output circuit comprises a negative pulse charging unit, a negative pulse output control unit, a negative pulse transmission unit and a negative pulse output electrode wire which are electrically connected in sequence; the positive pulse transmission unit at least comprises a forward multiplication transmission unit which is used for performing forward voltage multiplication or forward current multiplication on the forward output pulse signal; the negative pulse transmission unit at least comprises a negative multiplication transmission unit which is used for carrying out negative voltage multiplication or negative current multiplication on the negative output pulse signal. The bipolar nanosecond pulse synchronous output circuit provided by the utility model can improve instant pulse energy of nanosecond pulse tumor ablation equipment.

A Schottky barrier diode, including a first n-type semiconductor layer including a β-Ga2O3-based single crystal epitaxial layer and having a first carrier concentration that determines reverse breakdown voltage and forward voltage, a second n-type semiconductor layer including a β-Ga2O3-based single crystal substrate and having a second carrier concentration that is higher than the first carrier concentration and determines forward voltage, a Schottky electrode provided on a surface of the first n-type semiconductor layer on the opposite side to the second n-type semiconductor layer, and an ohmic electrode provided on a surface of the second n-type semiconductor layer on the opposite side to the first n-type semiconductor layer. The β-Ga2O3-based single crystal substrate includes a surface that has a plane orientation rotated by an angle of not more than 37.5° from a (010) plane.

Device for controlling at least one light-emitting diode (LED1) to generate short light pulses (LP),- with an H-bridge (H) consisting of a first half-bridge (HB1: T1, T2) with a first transistor (T1) and a second transistor (T2) and a second half-bridge (HB2: T2, T3) with a third transistor (T3) and a fourth transistor (T4),- wherein the H-bridge (H) is controlled by a control unit (ST) and- wherein the H-bridge (H) can be operated by the control unit (ST) in pulsed mode (GPB) and in quasi-continuous mode (QDB) and- wherein the first half-bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1) and- wherein the second half-bridge (HB2: T3,T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2) and- wherein the light-emitting diode (LED1) is connected with its cathode (K) to the output of the first half-bridge (HB1: T1, T2) and- wherein the light-emitting diode (LED1) is connected with its anode (A) to the output of the second half-bridge (HB2: T3, T4) and- wherein the first positive supply voltage (VCC1) and the second positive supply voltage (VCC2) can be equal and- wherein the first negative supply voltage (GND1) and the second negative supply voltage (GND2) can be equal and- wherein the light source, in particular the one or more light-emitting diodes (LED1), represents the load of the H-bridge (H) between the output of the first half-bridge (HB1: T1, T2) and the output of the second half-bridge (HB2: T3, T4) and- wherein the control device (ST) is designed to operate in pulsed mode (GPB) a “PAn” condition,in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a turn-on time (τpp), and- wherein the control device (ST) is designed so that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a clearing time (τpn), and- wherein the clearing time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1).