1632 results about "Forward voltage" patented technology

The data line voltage on the data line of the AMOLED sub-pixels is measured while the OLED is being driven by a reference current, in order to determine the age of the OLED in the sub-pixel. The pixel transistor serves as a current source for driving the OLED in the sub-pixel with the reference current. The data line voltage is substantially equal to the forward voltage VF(aged) of the aged OLED being driven at the reference current. The forward voltage VF (un-aged) of a reference (un-aged) OLED sub-pixel also measured at the reference current, and is subtracted from the measured OLED diode forward voltage VF (aged) to obtain their difference ΔVF=VF(aged)−VF(un-aged). ΔVF is an indicator of the age of the OLED in the sub-pixel, and is used as an index to a look-up-table that stores the corresponding aging offset data for generating the incremental pixel current needed to maintain constant luminance in the aged OLED pixel.

Synchronous rectifier circuit topologies for a wireless power receiver receiving a supply of power from a wireless transmitter are disclosed. The synchronous rectifier circuit topologies include a half-bridge diode-FET transistor rectifier for rectifying the wireless power into power including a DC waveform, using a control scheme that may be provided by a delay-locked loop clock, or phase shifters, or wavelength links to control conduction of FET transistors in the synchronous rectifier circuit topology, and maintaining a constant switching frequency to have the diodes, coupled to FET transistors, to allow current to flow through each one respectively at the appropriate timing, focusing on high conduction times. The synchronous rectifier circuit topologies may enable power transfer of high-frequency signals at enhanced efficiency due to significant reduction of forward voltage drop and lossless switching.

A current source generates, with high efficiency, a current that is substantially constant over a wide range of output voltages. This current is injected into the first end of a series-connected string (hereinafter referred to as string) of LEDs, with the second end of the string connected through a resistor to ground. The voltage developed across this resistor, which is a measure of current flow in the series string, is fed back to the current source, wherein feedback maintains nearly constant current output over a wide range of output voltages. A switch, such as a field effect transistor (FET) is placed in parallel with each LED in the string. A level shift gate driver couples a pulse width modulated control signal to the gate of each FET. When the FET across a particular LED is on, substantially all the current flows through the FET rather than the LED, and little or no light is emitted. Because the one resistance of the FET is very low, the power dissipated in the FET (current squared times resistance) is also very low. With the FET turned on, the forward voltage drop of the LED it is controlling drops to near zero, since little current is flowing through the LED. However, because the current source is designed to provide constant current over a wide range of output voltages, the current flow through the other LEDs in the series string changes little. When the FET is turned off, substantially all of the current flows through the associated LED, turning it on. By modulating the duty cycle of each FET, the brightness of each associated LED may be varied smoothly over its full range.

A lighting device comprising a group of one of more illumination solid state light emitters, a reference solid state light emitter and a reference sensor which detects an intensity of the reference solid state light emitter. Each of the emitters (1) has an illumination which is spaced from a first point by a delta u′, v′ distance on a 1976 CIR diagram of not more than 0.015, and/or (2) has a forward voltage temperature dependence which is within 5% of a first forward voltage temperature dependence. In addition, a lighting device comprising one or more illumination solid state light emitters, a reference solid state light emitter and a sensor which comprises at least two areas of individual sensors. Also, methods of lighting.

A light emitting diode (LED) based illumination module performs on-board diagnostics. For example, diagnostics may include estimating elapsed lifetime, degradation of phosphor, thermal failure, failure of LEDs, or LED current adjustment based on measured flux or temperature. The elapsed lifetime may be estimated by scaling accumulated elapsed time of operation by an acceleration factor derived from actual operating conditions, such as temperature, current and relative humidity. The degradation of phosphor may be estimated based on a measured response of the phosphor to pulsed light from the LEDs. A thermal failure may be diagnosed using a transient response of the module from a start up condition. The failure of LEDs may be diagnosed based on measured forward voltage. The current for LEDs may adjusted using measured flux values and current values and a desired ratio of flux values. Additionally, the LED current may be scaled based on a measured temperature.

A light assembly for use with a low voltage power source. The light assembly semiconductor photo-emitters are electrically in series with a higher forward voltage drop than the associated low voltage power supply. To provide the necessary voltage the light assembly includes a current regulated step-up DC/DC converter. The semiconductor photo-emitters that are electrically in series are in the form of a monolithic light emitting diode array with a plurality of light emitting diode elements electrically and mechanically in series with a conductive, rigid bond region between the cathode region of the first light emitting diode element and the anode region of the second light emitting diode element. The first and second light emitting diode elements may differ in band gaps to emit different colors, that are additive to a non-primary color, such as white.

A silicon-made low-forward-voltage Schottky barrier diode is serially combined with a high-antivoltage-strength high-electron-mobility transistor made from a nitride semiconductor that is wider in bandgap than silicon. The Schottky barrier diode has its anode connected to the gate, and its cathode to the source, of the HEMT. This HEMT is normally on. The reverse voltage withstanding capability of the complete device depends upon that between the drain and gate of the HEMT.

A drive circuit drives LED groups each of which has a plurality of LEDs connected in series. The drive circuit includes nMOSFETs which drive the LED groups, current regulating circuits which determine drain currents of the nMOSFETs, and subtracters which control the current regulating circuits to keep the sum of the current values of adjacent two nMOSFETs constant. The LEDs can be switched on/off efficiently even when there are differences between forward voltages of the LEDs.

A single-stage input-current-shaping (S<2>ICS) flyback converter achieves substantially reduced conduction losses in the primary side of the S<2>ICS flyback converter by connecting a bypass diode between the positive terminal of a full-bridge rectifier and the positive terminal of an energy-storage capacitor. An effective current interleaving between an energy-storage inductor and the bypass diode is thus obtained in the S<2>ICS flyback converter around the peak of the rectified line voltage, resulting in a significantly reduced input-current ripple and reduced current stress on the switch. Further, by rearranging the rectifiers in the ICS part of the S<2>ICS flyback converter in such a way that the energy-storage capacitor and the ICS inductor are connected to the ac line voltage through only two rectifiers, one diode forward-voltage drop is eliminated, which results in a substantially reduced conduction loss in the primary-side rectifiers.

A semiconductor device with high withstand voltage, reduced forward-direction voltage degradation, long lifetime and high reliability, is provided. A junction between the drift layer and anode layer of a bipolar semiconductor device and an electric field relaxation layer are formed at a distance from each other, and an edge portion of the anode is opposed to the semiconductor region between the junction and the electric field relaxation layer, with an insulating film intervening. When reverse-biased, due to the electric field effect imparted to the drift layer between the junction and the electric field relaxation layer from the electrode, with the insulating film intervening, the junction and electric field relaxation layer are electrically connected, and electric field concentration at the junction edge portion is relaxed. When forward-biased, the junction and electric field relaxation layer are electrically isolated, and forward-direction current flows only through the junction.

Circuits for sensing current levels within an apparatus are disclosed. In specific cases, a constant voltage power supply is used to power an LED lighting apparatus in which there are uncertainties within the forward voltages of the LEDs, which in turn creates uncertainty with respect to the current level flowing through the LEDs. To manage these uncertainties, the current flowing through the LEDs is measured by determining a voltage level across a known resistor and calculating the current level. To prevent the known resistor from causing a significant reduction in the efficiency of the overall light engine, the circuit includes one or more transistors in parallel with the known resistor to reduce the effective resistance in the LED circuit during times that the current is not being sensed.

A straight tube LED lamp according to one aspect of the present invention includes: a first LED array including first LED elements connected in series; a second LED array that includes second LED elements connected in series, and emits light having a different emission color from an emission color of the first LED array; a FET switch provided in a path through which current flows to the second LED array; and a constant power output circuit that outputs power without changing a total value of the power, wherein the number of the first LED elements connected in series is greater than the number of the second LED elements connected in series, a total forward voltage of the first LED array is greater than a total forward voltage of the second LED array, and the first LED elements are in alignment with the second LED elements.

The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages.

The invention relates to a LED circuit arrangement (1) with at least a voltage input (4), adapted to provide an operating voltage, a reactive element (6) connected in series with said voltage input (4) and a LED light source (3). To enable the LED circuit arrangement (1) to be driven at an operating voltage, the LED light source (3) comprises a first and a second LED unit (8, 9), each having one light emitting diode, controllable switching means (10) to connect said LED units (8, 9) with said reactive element (6) in a low voltage mode and a high voltage mode and a control unit (12). The LED light source (3) shows a first forward voltage in said low voltage mode and a second forward voltage in said high voltage mode, said second forward voltage being higher than said first forward voltage. The control unit (12) is adapted to control the current through the LED light source (3) by setting the switching means (10) to said low voltage mode when the current, supplied to the LED light source (3), corresponds to a first threshold value (30) and by setting the switching means (10) to the high voltage mode when said supplied current corresponds to a second threshold value (31).

The present invention provides an inexpensive radio frequency switching circuit having desirable radio frequency characteristics over a wide band and desirable endurance against the inflow of a high voltage signal such as an electrostatic surge. Either a negative bias voltage or a positive bias voltage being greater than or equal to 0V and less than or equal to a Schottky forward voltage is used for the control terminals V11 and V12 for controlling FETs 11 to 18 and FETs 21 to 28 so as to turn ON/OFF the path extending from the first input/output terminal P11 to the second input/output terminal P12 and the path extending from the first input/output terminal P11 to the third input/output terminal P13. Thus, it is possible to eliminate the need for DC cut capacitors.

A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate of a first conductivity type. The TVS includes a buried dopant region of a second conductivity type disposed and encompassed in an epitaxial layer of the first conductivity type wherein the buried dopant region extends laterally and has an extended bottom junction area interfacing with the underlying portion of the epitaxial layer thus constituting a Zener diode for the TVS device. The TVS device further includes a region above the buried dopant region further comprising a top dopant layer of a second conductivity type and a top contact region of a second conductivity type which act in combination with the epitaxial layer and the buried dopant region to form a plurality of interfacing PN junctions constituting a SCR acting as a steering diode to function with the Zener diode for suppressing a transient voltage.

In a MOS circuit comprising a plurality of MOSFETs constituting a digital circuit, an input signal is supplied to the digital circuit, and a first back bias voltage is supplied to a semiconductor substrate or a semiconductor well region in which the MOSFETs are formed, so that a pn junction between the semiconductor substrate or the semiconductor well region and a source region is brought to a forward voltage. In a non-operating state in which a circuit operation is suspended by the input signal supplied to the digital circuit as a fixed level, a second back bias voltage is applied to the semiconductor substrate or the semiconductor well region so that the pn junction between the semiconductor substrate or the semiconductor well region and the source region is brought to a reverse voltage.

A lighting control system suitable for a surgical lighting device. The lighting control system includes circuitry that compensates for the effects of temperature changes in a lighting device, and that compensates for forward voltage variations among LED lighting modules to provide substantially uniform light output.

An illumination device and method is provided herein for controlling individual light emitting diodes (LEDs) in an LED illumination device, so that a desired luminous flux and a desired chromaticity of the device can be maintained over changes in drive current and temperature. According to one embodiment, the illumination device comprises a plurality of emission LEDs, a storage medium, an LED driver and receiver circuit and a control circuit. The storage medium may store a table of calibration values correlating forward voltage and drive current to chromaticity and luminous flux at a plurality of temperatures for each of the plurality of emission LEDs. The LED driver and receiver circuit may apply respective drive currents to the emission LEDs to produce substantially continuous illumination, and may periodically turn the emission LEDs off to measure operating forward voltages that develop across each emission LED. The control circuit may determine whether a target luminance setting or a target chromaticity setting for the illumination device has changed, and if so, may determine new respective drive currents needed to achieve the target luminance setting and the target chromaticity setting using the operating forward voltages measured across each emission LED, the table of calibration values and one or more interpolation techniques.

There is provided a structure wherein an emitter layer 3 is provided in the region A on the first major surface side of a semiconductor substrate 1, and emitter layer 3 is not provided in the region b. There is provided a structure wherein a collector P layer 5 is provided in the region A on the second major surface side of a semiconductor substrate 1, and a cathode N layer 4 is provided in the region B. Specifically, there is provided a structure wherein IGBTs are composed in the region A, and diodes are composed in the region B. By the above-described structure, ON characteristics when the gate is turned on can be improved while suppressing the elevation of the forward voltage Vf and the recovery current of the diodes.