202 results about "Forward voltage" patented technology

According to the back contact battery and the preparation method thereof provided by the invention, doping elements penetrate through the third doping region between the first doping region and the second doping region through high-temperature diffusion to form an electric leakage channel, so that a new back surface structure of the back contact battery is provided. The third doped region is formed by mixing the doping elements of the first doped region and the doping elements of the second doped region, doping of the two impurities is completed at a high temperature in one step, so that an electric leakage channel of an overlapping region is not generated, and the overlapping region of the two doped semiconductor layers with opposite conduction types in the thickness direction of the semiconductor substrate is removed, so that the conductivity of the semiconductor substrate is improved. Therefore, electric leakage loss of the back contact battery in a forward voltage area can be controlled, current in the electric leakage channel is introduced to the grid line of the first electrode or the second electrode through the electric leakage channel or the connecting electrode, the hot spot risk of the back contact battery is reduced, the safety performance of the back contact battery is effectively improved, and the service life of the back contact battery is prolonged. And the back contact battery has relatively high working performance.

The invention provides an LED lamp adaptive speed regulation heat dissipation method and system based on real-time junction temperature monitoring. The method comprises the following steps: S100, acquiring a PWM signal or an analog signal of an LED driving command signal in real time; s200, on the basis of the change of the driving instruction signal, feedforward prediction is carried out by using a dynamic thermal inertia mapping model, and a feedforward fan control quantity is generated; s300, LED junction temperature is monitored in real time through a forward voltage method, and feedback fan control quantity is generated through a feedback controller according to the deviation between the real-time junction temperature and the target junction temperature; and S400, synthesizing the feedforward control quantity and the feedback control quantity to generate a fan PWM control signal, outputting the fan PWM control signal to a fan driving circuit, and adjusting the rotating speed of the cooling fan. According to the method, driving signals and junction temperature information are processed in parallel, and feedforward and feedback control is combined, so that self-adaptive accurate regulation and control are realized, thermal load change is quickly responded, system lag is effectively inhibited, and LED heat dissipation performance is optimized.

The invention belongs to the field of power device driving, particularly relates to the technical field of crosstalk suppression, and more particularly relates to a crosstalk suppression driving circuit. Through cooperative work of the driving module, the detection module, the buffering module and the clamping module, crosstalk is effectively suppressed while the switching speed is ensured. The driving module ensures normal switching action of the power device; the detection module converts the drain voltage change rate into a detection signal in real time, and recognizes the crosstalk risk in advance; the buffer module suppresses forward crosstalk by absorbing grid forward voltage spikes; the clamping module immediately conducts a low-impedance path from the grid electrode to the negative power supply when the detection signal exceeds a threshold value, and negative crosstalk is quickly eliminated. According to the design, the suppression circuit is only activated when the voltage change rate exceeds the standard, switching delay caused by a traditional fixed buffer circuit is avoided, accurate and rapid crosstalk suppression can be achieved, and finally the suppression effect and the system reliability are remarkably improved while the high-speed switching performance is maintained.

The invention provides a DC-DC forward boost-buck power conversion circuit based on cascaded Cuk topologies, and relates to the technical field of power electronic conversion, the circuit is mainly formed by cascading two Cuk topologies sharing one inductor, and the circuit also comprises a power supply end, a load end and a same-frequency driving signal generator. The same-frequency driving signal generator controls the two power switch tubes in the Cuk topology through a same-frequency signal, and the output voltage is adjusted by adjusting the duty ratio. The circuit not only keeps the advantage of continuous input and output current of a traditional Cuk circuit, but also converts the polarity of the output voltage from the reverse direction to the forward direction, and meanwhile, the voltage gain is remarkably improved, so that forward voltage conversion can be efficiently and smoothly realized. The circuit structure has the characteristics of high gain, forward output, continuous current, simple control and the like, and is suitable for occasions requiring high-efficiency and high-quality electric energy conversion, such as new energy power generation and energy storage, electric automobiles, precision industry and the like.

The invention relates to a power supply circuit with a monitoring function comprising a first current branch (2) with a first controllable section (20) and at least one load (21) arranged in series therewith, and a second current branch (3) with a second controllable section (30) and at least one load (31) arranged in series therewith. A controllable converter (4) is connected to the first and second current branches (2, 3) to supply a total current. A control circuit (5) with a control input, which is connected to the set input (10), wherein the control circuit (5) is coupled to the first controllable section (20) to adjust a current through the first current branch (2) depending on a provided first set signal.The second controllable branch (30) is coupled to the first current branch (2) and to the set input (10) in a dependent control loop, which is influenced by the current flowing in the first circuit (2) and the forward voltage of the two loads (21 and 31). It is configured to control a current through the second current branch (3) depending on an operating state through the first current branch (2) and a second set signal. Furthermore, a current-controlled monitoring circuit is provided, which is connected to a node between the respective current branch and the load connected in series with it. This circuit is configured to generate an error signal in response to a predefined deviation of one of the currents flowing into the current-controlled monitoring circuit, which reflects the state of the respective load.

An optoelectronic module includes at least one light emitting diode that emits light with a luminous intensity during operation. The optoelectronic module also includes an integrated circuit which sets an operating current of the light emitting diode and measures a value of the forward voltage of the light emitting diode during operation. The integrated circuit determines a degradation of the light emitting diode by measuring the value of the forward voltage and increases or decreases the electrical operating current as a function of the measured value of the forward voltage, such that a change in the luminous intensity due to the degradation is at least partially compensated. The integrated circuit or a measurement-control-unit for controlling the integrated circuit includes a memory in which calibration data is stored. The calibration data comprises a value of the forward voltage of the light emitting diode as a reference value for determining the degradation.

The invention relates to the technical field of lamp bead active heat dissipation, and discloses an LED lamp bead active heat dissipation system and method, and the method comprises the steps: injecting a micro-current pulse into a PN junction of an LED chip through a constant current source, collecting a forward voltage drop sampling value, and collecting a substrate temperature sampling value; calculating a junction temperature value based on the forward voltage drop sampling value, and calculating a junction-to-case temperature difference value and a substrate temperature rise rate value; setting an early-warning state identifier when the junction-to-case temperature difference value exceeds an early-warning threshold value and the duration meets a preset duration, setting an alarm state identifier when the junction-to-case temperature difference value exceeds an alarm threshold value, and shielding thermal runaway detection when the substrate temperature rise rate value exceeds an environment thermal shock threshold value and the junction-to-case temperature difference value is smaller than an environment exclusion threshold value; when the state identification is the normal state identification, calculating a first compensation current value; and when the state identification is the early warning state identification, a second compensation current value is calculated, and when the state identification is the alarm state identification, an alarm current limiting value is calculated, so that the working stability and long-term reliability of the LED in a wide temperature range are ensured.

The invention relates to the technical field of data processing, in particular to a high-frequency diode conduction loss characteristic test system, which comprises an acquisition module, a first judgment module, a second judgment module, a first determination module, a second determination module, an adjustment module and an output module. According to the method, multiple key data are collected, rapid screening is carried out according to forward voltage and reverse recovery charges, then, hidden defects of abnormal dynamic relevance of parameters are analyzed and identified by introducing shell temperature, and finally, a high-loss diode is obtained; the trend abnormity is identified by using the space-time distribution characteristics of the high-loss diode, and the loss reason is accurately detected through the voidage fluctuation mode; and meanwhile, based on a self-adaptive adjustment mechanism fed back by the test accuracy, a test report is finally output, so that the problems of low identification accuracy of the high-loss diode and low detection accuracy of loss reasons caused by excessive dependence on static parameters and incapability of adapting to complex and changeable working conditions are effectively solved.

A temperature sensor device is capable of measuring minute temperature changes while being manufactured at low cost without needing a high performance IC tester. A temperature sensor device includes a temperature sensor circuit 2 and a temperature sensor 1. The temperature sensor 1 includes a PN junction element 15 which is a temperature sensing element, a variable current source which supplies different forward currents of at least two values to the PN junction element 15 and a constant voltage source 16 which outputs a constant voltage having the same temperature properties as a forward voltage of the PN junction element 15.

A semiconductor device is capable of generating a correct over-temperature detection signal for an output transistor even if a reverse current from a load to the output transistor occurs. A temperature sensing diode is formed on the semiconductor substrate adjacent to the power transistor, and generates a forward voltage whose magnitude reflects the temperature of the output transistor. The over-temperature detection circuit detects an over-temperature state of the power transistor by comparing a magnitude of the forward voltage with a reference voltage, and asserts an over-temperature detection signal. The reverse current detection circuit detects the occurrence of a reverse current in the power transistor and asserts a reverse current detection signal during the occurrence. The semiconductor device performs processing such as masking an over-temperature detection signal using a reverse current detection signal.

An LED driver configured to control a LED fixture comprising a plurality of LED groups is described, each LED group comprising at least one LED forming a series connection with a switch, wherein the plurality of LED groups are arranged in a parallel connection, the LED fixture further comprising a capacitor arranged in a parallel connection to the plurality of LED groups, the LED driver comprising:a power converter for converting an input power from a power source to a current which is provided to the plurality of LED groups;a control unit configured to control the power converter to provide the current to the plurality of LED groups, and wherein the control unit is further configured tocontrol an operation mode of the switch of the LED group between a nominal mode, wherein the switch operates in a closed nominal state or an open nominal state, anda transition mode, wherein the switch operates in a semi-closed state, wherein a gate to source voltage of the switch of the LED group is lower than the gate to source voltage of the respective switch when operated in the nominal mode,switch the current from flowing through a first LED group to flowing through a second LED group, wherein the first LED group has a higher forward voltage than the second LED group, by switching the switch of the first LED group in the open nominal state and the switch of the second LED group in the semi-closed state during a transient period.

The invention discloses a power diode based on an MOF, a preparation method, a 3D chip packaging method and application, belongs to the technical field of electronic materials and power devices, and particularly relates to a composite structure based on an n-Si substrate / an (n-Si)-(ZIF-8) composite layer / an Ag layer, preparation, a 3D chip packaging method and application of the composite structure in the field of power devices. The reverse withstand voltage of the power diode based on the n-Si substrate / ''(n-Si)-(ZIF-8) composite layer'' / Ag layer composite structure exceeds 200V, the forward conduction voltage of the power diode is 0.25-1.5 V, the reverse bias voltage applied to the power diode is 0-200V, the reverse leakage current is basically not increased along with the increase of the reverse bias voltage, and the reverse leakage current is 0.2-2.1 mA (at the reverse voltage-100V). Compared with a conventional power diode based on an n-Si substrate / Ag layer Schottky structure, the performance of the power diode provided by the invention has the advantages that although the forward voltage is basically unchanged, the reverse voltage is increased by 80-400%, the reverse saturation current is reduced by 50-800%, and the highest yield reaches 95%.

The invention belongs to the technical field of semiconductor material processing, and particularly relates to a monocrystalline silicon preparation method for improving forward voltage drop of a power device, the power device and monocrystalline silicon, and the method comprises the following steps: when a monocrystalline silicon rod is drawn by a czochralski method, the growth crystal orientation is 1t by controlling crystal pulling parameters and cooling parameters in an equal-diameter process; 111gt, 111gt; the silicon single crystal rod, the crystal pulling parameters and the cooling parameters are configured as follows: interstitial oxygen precipitation can be inhibited to form silicon dioxide precipitation, so that the volume microdefect density in the grown silicon single crystal is lower than a preset threshold value, and the method provided by the invention inhibits the interstitial oxygen precipitation process by reasonably configuring the crystal pulling parameters and the cooling parameters, so that the yield of the silicon single crystal is improved. According to the present invention, the silicon dioxide deposition formation is reduced, such that the volume micro-defect density in the grown monocrystalline silicon is lower than the preset threshold value, and when the monocrystalline silicon is applied to the ultra-fast recovery diode product, the forward voltage drop value VF can be reduced so as to be within the range of 1.3-1.7 V so as to meet the customer requirements.

The utility model relates to the technical field of medical equipment, and particularly discloses a bipolar nanosecond pulse synchronous output circuit and ablation equipment, which comprise a positive pulse output circuit and a negative pulse output circuit, the positive pulse output circuit comprises a positive pulse charging unit, a positive pulse output control unit, a positive pulse transmission unit and a positive pulse output electrode wire which are electrically connected in sequence; the negative pulse output circuit comprises a negative pulse charging unit, a negative pulse output control unit, a negative pulse transmission unit and a negative pulse output electrode wire which are electrically connected in sequence; the positive pulse transmission unit at least comprises a forward multiplication transmission unit which is used for performing forward voltage multiplication or forward current multiplication on the forward output pulse signal; the negative pulse transmission unit at least comprises a negative multiplication transmission unit which is used for carrying out negative voltage multiplication or negative current multiplication on the negative output pulse signal. The bipolar nanosecond pulse synchronous output circuit provided by the utility model can improve instant pulse energy of nanosecond pulse tumor ablation equipment.

A Schottky barrier diode, including a first n-type semiconductor layer including a β-Ga2O3-based single crystal epitaxial layer and having a first carrier concentration that determines reverse breakdown voltage and forward voltage, a second n-type semiconductor layer including a β-Ga2O3-based single crystal substrate and having a second carrier concentration that is higher than the first carrier concentration and determines forward voltage, a Schottky electrode provided on a surface of the first n-type semiconductor layer on the opposite side to the second n-type semiconductor layer, and an ohmic electrode provided on a surface of the second n-type semiconductor layer on the opposite side to the first n-type semiconductor layer. The β-Ga2O3-based single crystal substrate includes a surface that has a plane orientation rotated by an angle of not more than 37.5° from a (010) plane.

Device for controlling at least one light-emitting diode (LED1) to generate short light pulses (LP),- with an H-bridge (H) consisting of a first half-bridge (HB1: T1, T2) with a first transistor (T1) and a second transistor (T2) and a second half-bridge (HB2: T2, T3) with a third transistor (T3) and a fourth transistor (T4),- wherein the H-bridge (H) is controlled by a control unit (ST) and- wherein the H-bridge (H) can be operated by the control unit (ST) in pulsed mode (GPB) and in quasi-continuous mode (QDB) and- wherein the first half-bridge (HB1: T1, T2) is supplied with electrical energy from a first positive supply voltage (VCC1) and a first negative supply voltage (GND1) and- wherein the second half-bridge (HB2: T3,T4) is supplied with electrical energy from a second positive supply voltage (VCC2) and a second negative supply voltage (GND2) and- wherein the light-emitting diode (LED1) is connected with its cathode (K) to the output of the first half-bridge (HB1: T1, T2) and- wherein the light-emitting diode (LED1) is connected with its anode (A) to the output of the second half-bridge (HB2: T3, T4) and- wherein the first positive supply voltage (VCC1) and the second positive supply voltage (VCC2) can be equal and- wherein the first negative supply voltage (GND1) and the second negative supply voltage (GND2) can be equal and- wherein the light source, in particular the one or more light-emitting diodes (LED1), represents the load of the H-bridge (H) between the output of the first half-bridge (HB1: T1, T2) and the output of the second half-bridge (HB2: T3, T4) and- wherein the control device (ST) is designed to operate in pulsed mode (GPB) a “PAn” condition,in which a forward voltage in the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a turn-on time (τpp), and- wherein the control device (ST) is designed so that in pulsed operation (GPB) a "PAus" state, in which a reverse voltage against the forward direction of the light-emitting diode (LED1) is applied to the light-emitting diode (LED1) through the H-bridge (H), is not maintained by the H-bridge (H) for longer than a clearing time (τpn), and- wherein the clearing time (τpn) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1), and- wherein the turn-on time (τpp) is less than the charge carrier lifetime (τ) in the PN junction of the light-emitting diode (LED1).

MOS junction barrier Schottky diode relates to the technical field of power semiconductor device. N-type substrate, N-type epitaxial layer, deep P region, slot gate, slot gate oxide layer, conductive enhancement region and isolation oxide layer are arranged between cathode metal and anode metal, the lower surface of the N-type substrate is in contact with the cathode metal, the upper surface is in contact with the lower surface of the N-type epitaxial layer, the upper surface of the N-type epitaxial layer is in contact with the P region, the conductive enhancement region is arranged on the outer surface of the slot gate oxide layer and is in contact with the N-type epitaxial layer, part of the slot gate oxide layer, the conductive enhancement region, the isolation oxide layer and part of the deep P region are respectively in contact with part of the anode metal. The MOS junction barrier Schottky diode structure of the application improves the carrier density at the channel, reduces the channel resistance, and further improves the reverse leakage current characteristics and the forward voltage drop by inserting a slot gate MOS structure in the adjacent P region of the traditional junction barrier Schottky (JBS) diode.

The invention discloses an I-type modularized direct-current solid-state circuit breaker, which relates to the technical field of direct-current solid-state circuit breakers and comprises four horizontal bridge arms, namely an FBSM1, an FBSM2, an FBSM3 and an FBSM4, a vertical bridge arm group, and four inductors, namely an L1, an L2, an L3 and an L4. According to the circuit breaker, the removal time of monopole grounding and interelectrode short circuit faults is short and far faster than that of a traditional circuit breaker, and the impact of fault current on equipment can be greatly reduced. Differentiation module control is adopted for different faults, power supply of the other pole is not affected when the faults are removed, and the system reliability is improved. When inter-electrode short circuit occurs, forward voltage is inserted into the full-bridge sub-module to enable the voltage of a short-circuit point to be close to zero, reverse discharge of a capacitor is limited, fault current is cleared at the first zero crossing point of current, fault expansion is avoided, and the problems that an existing traditional solid-state circuit breaker is insufficient in single-pole grounding fault processing capacity, influences system power supply reliability, is single in function and the like are solved.

The application relates to the technical field of micro electro mechanical system (MEMS), and particularly relates to a MEMS switch and a preparation method thereof, wherein the MEMS switch comprises a support structure layer and an encapsulation structure; a cavity is released on the support structure layer, and a matching thin film and a static area are formed; the encapsulation structure and the support structure layer jointly form an airtight chamber; a piezoelectric actuator comprises a piezoelectric driving electrode and at least one layer of piezoelectric thin film; an electric contact structure comprises a dynamic contact electrode and a static contact electrode arranged in the airtight chamber; the dynamic contact electrode is arranged on the piezoelectric actuator, and the static contact electrode is arranged towards the dynamic contact electrode and fixedly arranged. The piezoelectric actuator and the dynamic contact electrode are directly prepared on a wafer base, and the static contact electrode opposite to the dynamic contact electrode is fixedly arranged in the encapsulation structure; by applying a forward voltage difference or a reverse voltage difference to the piezoelectric actuator, the on-off of the electric contact structure is realized, and the overall structure is simple and controllable.

This invention relates to the field of chip technology, specifically to a high-voltage GPP chip with composite trenches and its fabrication method, comprising: N layers arranged sequentially from bottom to top. + Substrate, N-layer, P-layer + Layer, the N + The substrate layer and the N layer form an N-N + Substrate, the P + Layer P and N layers constitute P + -N junction; trenches in the chip edge region, with the inner walls of the trenches covered by a composite passivation layer, the composite passivation layer comprising an inner boron-doped silicon glass layer and an outer phosphorus-doped silicon glass layer; an isolation ring on the inner side of the trench; covering P + Layer surface and N + The metal layer on the lower surface of the substrate serves as the electrode lead-out layer of the chip. The optimized fabrication process of this invention is highly compatible with each structure, achieving a comprehensive improvement in the overall performance of the chip. The matching of each fabrication step with the structural design allows the functions of each component of the chip to be fully utilized, synergistically achieving a comprehensive effect of high breakdown voltage, low leakage current, low forward voltage drop, and excellent high-temperature stability.

The invention relates to a manufacturing method of a trench Schottky diode with an adjustable forward voltage. A Schottky diode includes a substrate having an active region. The grooves extend into the substrate epitaxial layer, the side walls and the bottom surfaces of the grooves are lined with insulating layers, and the rest part of each groove is filled with polycrystalline silicon (polycrystalline silicon) filler. A doped region having a dopant of the same conductivity type as the semiconductor substrate is implanted in the epitaxial layer at a position between adjacent trenches. A silicide is provided at each polysilicon filler and a Schottky barrier is provided at each doped region. An anode contact of the diode contacts the silicide and the Schottky barrier, and a cathode contact of the diode contacts the lower surface of the substrate. The dopant concentration level of the selected doped region controls the setting of the forward voltage (VF) level of the Schottky diode.

The invention discloses a low-leakage high-speed voltage flat-turn circuit. The low-leakage high-speed voltage flat-turning circuit comprises a voltage flat-turning main circuit. The low-leakage high-speed voltage flat-turning circuit also comprises a forward output circuit, a reverse output circuit or both. The forward output circuit comprises a forward voltage flat-turn circuit and a forward end buffer circuit. The voltage flat-conversion main circuit is connected with the input end of the forward voltage flat-conversion circuit and the input end of the backward voltage flat-conversion circuit. And the output end of the forward voltage flat conversion circuit is connected with the forward end buffer circuit. The reverse output circuit comprises a reverse voltage flat-turn circuit and a reverse end buffer circuit. And the output end of the reverse voltage flat conversion circuit is connected with the reverse end buffer circuit.

The invention discloses a silicon controlled electrostatic protection device and a preparation method thereof, a metal block is arranged on the surface of a second N well and is in Schottky contact with the metal block, so that the second N well and the metal block form a Schottky diode, and an N + injection region in the second N well serves as a cathode of the silicon controlled electrostatic protection device. The P + injection region and the first N well form a PN junction diode, and the P + injection region is used as an anode of the silicon controlled electrostatic protection device, so that the PN junction diode and the Schottky diode form a trigger path of the silicon controlled electrostatic protection device, and the characteristics of low forward conduction voltage and fast conduction time and speed of the Schottky diode are utilized; the trigger voltage of the silicon controlled electrostatic protection device is effectively reduced, the failure current is improved, the latch-up effect can be effectively avoided under the ultra-low working voltage, and meanwhile the high protection level is achieved.

The utility model discloses a power device grid protection circuit and device, the power device grid protection circuit is connected with a power device, the power device grid protection circuit comprises at least one unidirectional TVS tube module, and the forward conduction voltage drop and the reverse breakdown voltage of the unidirectional TVS tube module are different; the one-way TVS tube module comprises at least one one-way TVS tube, and the number, the forward conduction voltage drop and the reverse breakdown voltage of the one-way TVS tubes are selected based on the asymmetric gate withstand voltage requirement of the power device. According to the grid protection circuit of the power device, the at least one unidirectional TVS tube module is arranged, and the forward conduction voltage drop and the reverse breakdown voltage of the unidirectional TVS tube module are different, so that when the voltage exceeds the breakdown voltage of the unidirectional TVS tube module, the high resistance state can be converted into the low resistance state to limit the further rise of the voltage, and under the action of the forward voltage, the voltage drop of the unidirectional TVS tube module is reduced. The power device has the characteristic of a diode, realizes bidirectional voltage protection, and can provide effective protection for the power device with the asymmetric voltage-resistant grid electrode.

The utility model discloses a red lamp pearl voltage drop balance circuit, including commercial power input circuit and transformer circuit, the output of transformer circuit is connected with constant voltage constant current circuit, and the output of constant voltage constant current circuit is parallel with red light lamp pearl control circuit, white light lamp pearl, green light lamp pearl and blue light lamp pearl, still be provided with control drive circuit, control drive circuit is connected with red light lamp pearl control circuit, white light lamp pearl, green light lamp pearl and blue light lamp pearl respectively. The utility model discloses the structure is reasonably set, reduced the use of resistance, is favorable to reduce cost, reduces the waste of power supply, is provided with red light lamp pearl control circuit, and it only needs to separately carry out DC-DC constant current control to red light lamp pearl, can separately adjust and control the forward voltage drop of red light lamp pearl, does not need extra resistance series connection again, can guarantee the illumination of red light lamp pearl under the condition of lower input power, improves the utilization of power supply, can reduce the volume of lamp body.

This invention discloses a silicon carbide junction barrier Schottky diode, belonging to the field of semiconductor technology. It includes a silicon carbide substrate, an N+ buffer zone, an N+ drift region, a cell region, a termination region, an isolation layer, a cathode metal, an anode metal, and a passivation layer. The N+ buffer zone is located above the silicon carbide substrate and has a first epitaxial layer. The N+ drift region is located above the N+ buffer zone and has a second and a third epitaxial layer, with the second epitaxial layer covering the first and third epitaxial layers respectively. The cell region includes a P+ junction. The termination region is located above the N+ drift region and has a P+ field-limiting ring. A P+ transition region is located between the cell region and the termination region. The isolation layer covers the termination region. The passivation layer covers the isolation layer. The cathode metal covers the bottom of the silicon carbide substrate, and the anode metal is located above the N+ drift region. This diode has a low forward voltage drop and a high reverse breakdown voltage.

The invention discloses an EDFA (erbium doped fiber amplifier) pump laser service life prediction method based on dynamic stress accumulation. The EDFA pump laser service life prediction method comprises the following steps: acquiring driving current, forward voltage drop, backward optical power and shell temperature of a pump laser in a working state in real time; obtaining a calibrated thermal resistance value of the current pump laser, and calculating an instantaneous junction temperature by combining the driving current, the forward voltage drop, the backward optical power and the shell temperature; driving current and instantaneous junction temperature are collected at fixed time intervals, and the total damage rate under the current stress condition is calculated in combination with a total damage rate model; total accumulated damage is calculated in real time based on the total damage rate, and life prediction is carried out based on the total accumulated damage calculated in real time. According to the invention, the dynamic working stress of the pump laser can be sensed in real time, and high-precision life prediction is realized by accumulating the damage effect of the pump laser.

The utility model discloses a novel circuit structure comprising an LED support used for bearing and installing an LED chip module, and at least one surface of the LED support is provided with a novel circuit structure; the LED chip modules are erected on the novel circuit structure in an arrangement mode of n rows and m columns, and m and n are larger than or equal to 1; the LED chip module is composed of a plurality of LED chips which are connected in series or in parallel, the wavelength of each LED chip is 450-495 nm, and the forward voltage of each LED chip is smaller than or equal to 3.45 V; and the packaging layer covers the surface of the LED chip module. The utility model has the advantages of simple structure and reasonable layout, can effectively improve the electro-optical conversion rate, and can improve the LED lighting effect.

The invention provides a device state diagnosis method and system based on temperature characteristics, and relates to the technical field of semiconductor device detection. The method comprises the following steps: loading a preset current through a specified power analyzer, and measuring forward voltage drop data of the semiconductor device under different temperature conditions; analyzing the forward pressure drop data of different temperature points, and drawing a temperature characteristic curve of the forward pressure drop data and the temperature; and performing device state diagnosis on the to-be-diagnosed device once every time the drawing of the temperature characteristic curve is executed, so as to obtain a diagnosis state result. According to the method, the degradation type can be accurately judged by utilizing the opposite trend of bipolar degradation and bonding wire aging and matching with the temperature characteristic change trend.

The application relates to the technical field of LED lamp bead detection, and discloses an LED lamp bead light decay prediction method and system, which comprises the following steps: collecting the luminous flux, junction temperature and forward voltage of an LED lamp bead to obtain LED operation parameter data; performing first-order derivative and second-order derivative calculation on the LED operation parameter data to obtain parameter change rate data; performing composite threshold value detection on luminous flux drop events, temperature jump events and thermal resistance mutation events based on the parameter change rate data to obtain light decay event detection results; and generating lamp bead identification results including a thermal attenuation mode, an electromigration attenuation mode or a photochemical attenuation mode according to the light decay event detection results, in combination with carrier injection efficiency values, fluorescent powder quantum efficiency values and chip defect density values, the application drives physical parameter calculation and mode identification based on event detection results, realizes a technical transformation from passive response to active identification, and significantly improves the real-time performance and accuracy of LED light decay prediction.