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516results about How to "Uniform light output" patented technology

White-light LED light source with sterilization effect and manufacturing method thereof

InactiveCN105304801ASufficient heat dissipationImproves UV resistanceSemiconductor devicesEffect lightEngineering
The invention discloses a white-light LED light source with a sterilization effect, which comprises a PCT bracket with heat sink, a UV wafer, a blue-light wafer, a gold wire and fluorescent glue, wherein the UV wafer and the blue-light wafer are fixed in the PCT bracket, the UV wafer is connected with the blue-light wafer in a welded mode through the gold wire, and the fluorescent glue is coated inside the PCT bracket and covers the UV wafer and the blue-light wafer. The invention further discloses a manufacturing method of the white-light LED light source with the sterilization effect. The PCT bracket with the heat sink is adopted, the heat sink ensures that a device has sufficient heat dissipation performance, a PCT material is better in UV resistant performance compared with common PPA materials, and the UV resistant performance of the device is improved; and UV resistant wafer fixing glue and UV resistant potting silica gel are adopted, so that the UV resistant performance of the device is improved. According to the invention, UV light is contained in white light in the device, and light emission is uniform. Meanwhile, the white-light LED light source has functions of sterilization and lighting, does not need to carry out light source matching, is convenient to use and has reliable and stable performance at the same time.
Owner:JIANGSU WENRUN OPTOELECTRONICS

White LED chip and forming method thereof

The invention relates to a white light-emitting diode (LED) chip and a forming method thereof. The white LED chip comprises a silicon substrate, a first buffer layer, a first active layer, a first cap layer, a first groove and a second groove, wherein the first buffer layer, the first active layer and the first cap layer are positioned on the silicon substrate sequentially; the first groove passes through the first buffer layer and the first active layer respectively to extend to the first cap layer, and a second buffer layer, a second active layer and a second cap layer are arranged in the first groove; the second groove passes through the first buffer layer and the first active layer respectively to extend to the first cap layer, and a third buffer layer, a third active layer and a third cap layer are arranged in the second groove; and the first active layer, the second active layer and the third active layer are selected from one of a blue light active layer, a green light active layer and a red light active layer respectively and are the active layers with different colors. When used, the white LED chip can emit red light, green light and blue light simultaneously, and can emit white light after the light with three colors is mixed; and due to the adoption of the silicon substrate which deviates 1 to 9 degrees from a crystal plane (111) in the crystal orientation, dislocation between the buffer layers and the silicon substrate can be reduced.
Owner:ENRAYTEK OPTOELECTRONICS

Backlight illumination structure based on double-sided light-dimming light guide plate and manufacturing method of backlight illumination structure

The invention relates to a backlight illumination structure based on a double-sided light-dimming light guide plate and a manufacturing method of backlight illumination structure. The illumination structure comprises a side-entry type light source, a light guide plate, a base plate light-guiding layer, a quantum dot colored film layer and a spot light micro-structure, wherein the side-entry type light source, the light guide plate, the base plate light-guiding layer, the quantum dot colored film layer and the spot light micro-structure are sequentially arranged; a colored light filter in a liquid crystal panel is moved into backlight through the backlight structure, and is combined with a light-dimming scattering micro-structure of a scattering layer so as to perform light dimming; due tolight extraction of the light-guiding layer and light modulation of the micro-structure, the phenomenon that the structure has uniform light output is ensured simultaneously, optical film plates are integrated, so that the size and the thickness of the device are reduced, the device structure is simplified, and light energy can be fully and effectively utilized; by utilizing the design including the size, the position and the like of the micro-structure in the backlight, color adjustment is directly carried out, light dimming of a pixel array micro-structure is realized on the backlight, and the backlight illumination structure has the characteristics of simplicity, integration and the like; moreover, the luminous efficacy can be greatly enhanced, the purity of the color and the color domain are promoted, and the market competitiveness of liquid crystal display is greatly improved.
Owner:FUZHOU UNIVERSITY

White LED chip and forming method thereof

The invention discloses a white LED and a forming method thereof. The white LED chip comprises a substrate, a first groove and a second groove, wherein the substrate is provided with a first buffer layer positioned on the substrate, a first active layer positioned on the first buffer layer and a first cap layer positioned on the first active layer; the first groove respectively penetrates through the first buffer layer and the first active layer and extends to the first cap layer; a second buffer layer, a second active layer and a second cap layer are arranged in the first groove; the second buffer layer is positioned on the substrate; the second active layer is positioned on the second buffer layer; the second cap layer is positioned on the second active layer; the second groove respectively penetrates through the first buffer layer and the first active layer and extends to the first cap layer; a third buffer layer, a third active layer and a third cap layer are arranged in the second groove; the third buffer layer is positioned on the substrate; the third active layer is positioned on the third buffer layer; and the third cap layer is positioned on the third active layer. By using the white LED, one LED chip can simultaneously emit red, green and blue light which are mixed to emit white light.
Owner:ENRAYTEK OPTOELECTRONICS

GaN-based light-emitting diode structure improving light extraction rate and preparation method

The invention belongs to the field of photoelectric devices, and particularly relates to a GaN-based light-emitting diode structure improving the light extraction rate and a preparation method. The GaN-based light-emitting diode structure improving the light extraction rate and the preparation method solve the technical problems that the carrier concentration of a P-type area of an existing LED structure is not high, currents are distributed unevenly, and the light emitting efficiency is low. The GaN-based light-emitting diode structure improving the light extraction rate comprises a substrate, a GaN buffer layer growing on the substrate, a non-doped GaN layer growing on the GaN buffer layer, a Si-doped GaN layer growing on the non-doped GaN layer, multiple-quantum well structures, growing on the Si-doped GaN layer, of six periods, a p-AlGaN electronic blocking layer growing on the multiple-quantum well structures, a Mg-doped p-type GaN layer growing on the p-AlGaN electronic blocking layer, a heavily-doped p-type GaN layer growing on the Mg-doped p-type GaN layer, and an n-type InGaN layer growing on the heavily-doped p-type GaN layer. According to the GaN-based light-emitting diode structure improving the light extraction rate and the preparation method, the currents are distributed evenly, the light emitting efficiency is high, and the preparation process is simple.
Owner:太原理工大学建筑设计研究院有限公司

Lens and light-emitting device

The invention provides a lens and a light-emitting device. The lens comprises a column-shaped lens main body, wherein the column-shaped lens main body is provided with a bottom surface, a top surface and a circumference surface; the middle of the bottom surface concaves inwards to form a light incoming surface; the top surface is a total reflection surface in the shape of a smooth transitional curved surface and is provided with a center vertex; the circumference surface is a light extracting surface; the light incoming surface comprises a first cylindrical light incoming surface connected with the bottom surface and a second pyramid light incoming surface connected with the first light incoming surface; the second pyramid light incoming surface is provided with a pyramid vertex and pyramid surfaces in the shapes of smooth transitional curved surfaces; the center vertex of the total reflection surface and the pyramid vertex of the second light incoming surface are both on the axis of the lens main body; incident ray getting into the lens main body from the first light incoming surface is directly emitted out by the light extracting surface to form a plurality of first emergent rays upwardly inclined by 0-40 degrees relative to the bottom surface; incident ray getting into the lens main body from the second light incoming surface is reflected by the total reflection surface and then emitted out by the light extracting surface to form a plurality of top emergent rays which are upwardly or downwardly inclined. According to the invention, light leaking is effectively reduced.
Owner:THE HONG KONG POLYTECHNIC UNIV

LED encapsulating structure and method thereof

The invention discloses an LED encapsulating structure and a method thereof. The encapsulating structure comprises a bracket, an LED wafer, a wire, transparent external encapsulating glue and external encapsulating glue in which a dispersant is added, wherein the transparent external encapsulating glue is in up-and-down hierarchical connection with the external encapsulating glue in which the dispersant is added; the bracket comprises two parallel electrodes; the end surface of one end of the electrodes is provided with a groove supporting seat; the LED wafer is fixed on the bottom of the groove supporting seat by primer; the wire is connected with the LED wafer and the electrodes; the transparent external encapsulating glue is used for coating the LED wafer, the wire and the part of the bracket where the groove supporting seat is located; the transparent external encapsulating glue is higher than the groove supporting seat and is used for coating the LED wafer; the external encapsulating glue in which the dispersant is added is lower than the groove supporting seat, wherein the dispersant is distributed on the external encapsulating glue in which the dispersant is added; and no dispersant is distributed on the transparent external encapsulating glue. By adopting the encapsulating structure, good spot and uniform illumination of the light emitted by an LED are realized without reducing the brightness.
Owner:LEDMAN OPTOELECTRONICS

Improved LED packaging method and packaging structure

ActiveCN105304772ALow costImprove luminous brightness and thermal performanceSemiconductor devicesLed packagingChemistry
The invention discloses an improved LED packaging method and packaging structure. The packaging method comprises the following steps: 1, coating the surface of an LED chip with phosphor and a liquid-state organic silica gel composition after the phosphor and the liquid-state organic silica gel composition are well mixed; 2, placing the LED chip processed in step one under the condition of a first temperature for heating so as to realize deposition of the phosphor, wherein the firs temperature is greater than a room temperature and smaller than a crosslinking temperature of the organic silica gel composition; and 3, placing the LED chip processed in step two under a heating and/or illumination condition to enable the organic silica gel composition to be solidified. According to the invention, LED packaging can be rapidly and simply realized at a low cost, conformal deposition of the phosphor on the surface of the LED chip can be realized in a packaging process under the condition that less phosphor is consumed, the light emitting quality of an LED device is substantially improved (for instance, light is emitted more uniformly, light spots are basically free from blue-circle and yellow-circle phenomena, and the like), and the luminescence brightness and the heat dissipation performance of the LED device can also be effectively improved. Therefore, the application prospect is wide.
Owner:FLORY OPTOELECTRONICS MATERIALS SUZHOU CO LTD
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