526 results about "Dislocation" patented technology

The invention belongs to the technical field of silicon carbide single crystal materials, and particularly relates to a growth device of large-size silicon carbide single crystals and a preparation method of the silicon carbide single crystals, porous graphite cylinders are arranged in a powder area of the growth device of the large-size silicon carbide single crystals, and the porous graphite cylinders are distributed along the edge of the powder area to the center in a stepped mode. The height is gradually increased from the edge to the center; a plurality of layers of stacked graphite pore plates are arranged at the top of the powder area, the upper end parts of the porous graphite cylinders are flush with the upper surfaces of the corresponding layers of graphite pore plates, and the porous graphite cylinders penetrate through the graphite pore plates, so that a continuous gas phase transmission channel from the powder area to the crystal growth area is formed. According to the invention, the plurality of porous graphite cylinders are arranged in the silicon carbide raw material area in a stepped manner, so that the temperature field distribution of the raw material area is stabilized, the gas phase layout is optimized, impurities in gas phase components are filtered, and the defects of microtubes, inclusions, dislocation and the like in crystals are improved.

The invention discloses a preparation device and method for growing a large-size silicon carbide single crystal. A raw material gas phase in a high-temperature area is transmitted to the surface of a seed crystal in a low-temperature area for crystal growth by using a physical gas phase transmission method; the device comprises a furnace chamber, a movable sectional type heating system, a thermal insulation material, a graphite crucible, porous graphite, a seed crystal unit, a crystal growth induction forming device and an electric field device. The method comprises the following steps: installing a seed crystal unit in a crucible filled with silicon carbide powder, placing the crucible in a heater, and carrying out a crystal growth stage to prepare the silicon carbide single crystal. The whole growth process of the crystal is in a constant temperature state, thermal stress caused by the temperature difference between the growth end and the seed crystal end and the temperature difference between the crystal edge and the crystal center in the top end seed crystal method crystal growth process is avoided, the dislocation defect of the crystal is reduced, and finally the high-quality silicon carbide single crystal is obtained. And the production cost is reduced.

The invention provides a silicon carbide crystal growth process which comprises the following steps: A) dividing the interior of a crucible into seven loading areas, namely an F area, a D area, a B area, an A area, a C area, an E area and a G area which are adjacent in sequence by adopting graphite partition plates, filling silicon carbide powder in each loading area, and placing the graphite partition plates perpendicular to the bottom surface of the crucible; the particle size of the silicon carbide powder is 10-80 meshes; and B) fixing a seed crystal on the top of the crucible filled with the silicon carbide powder, and growing the silicon carbide crystal by adopting a PVT method. By optimizing the charging process, the uniformity and the utilization rate of sublimation gas of the powder in the growth process can be improved, the stability of a temperature field in a furnace is facilitated, the probability of crystal phase change is reduced, crystal defects (phase change, polycrystal, dislocation and the like) are reduced, and thus the crystal quality is improved.

The invention discloses a sample preparation and characterization method of a rotation angle crystal interface, which is suitable for a sample with dislocation at the interface of two crystals, and comprises the steps of sample preparation and measurement of the relative rotation angle theta of the two crystals. A certain angle is formed between the cutting direction and the interface for sample preparation, a slice is taken out, and the obtained slice has three thin areas including a top material A crystal, a top material A / bottom material B crystal mixing area and a bottom material B crystal; measurement of the rotation angle theta: the electron beam direction is parallel to the rotation axis of the top sample during testing, and the rotation angle theta is directly measured by analyzing crystallographic information of the three thin areas. According to the method, the rotation angle of the top crystal relative to the bottom crystal can be accurately measured through TEM analysis of the three thin regions, and the error-tolerant rate of TEM sample preparation and analysis experiments is improved. In addition, the sample preparation technology can be used for monitoring the change of the physical properties of the sample in mechanics, thermotics, optics, electricity and the like along with the reduction of the size of the sample from the micron level to the nano level.

The invention discloses a spinning forming dislocation evolution prediction and process optimization method based on multi-scale modeling, which combines three calculation methods with different scales and levels, namely macroscopic finite element simulation, microcosmic crystal plasticity simulation and microcosmic dislocation dynamics simulation. A complete perspective from macroscopic mechanical behaviors to microscale mechanical response and dislocation density evolution and then to microscale single dislocation motion and interaction mechanism can be provided, so that the plastic forming process of the metal material can be understood more comprehensively. Not only are the prediction precision and reliability improved, but also the understanding depth of the material deformation behavior and the influence factors thereof is enhanced. By integrating information of different scales, key characteristics such as macroscopic stress, strain distribution, grain deformation response, dislocation density evolution and movement and interaction of a single dislocation of the material in the plastic forming process can be predicted more accurately. Meanwhile, in combination with multi-scale simulation, process parameters can be optimized to obtain better forming quality and performance.

The invention provides a high-performance N-type Pb (Se, Te)-based thermoelectric material and a preparation method and application thereof. The thermoelectric material provided by the invention is a high-performance Pb (Se, Te)-based thermoelectric material rich in nano precipitated phases and dislocations, the chemical general formula of the thermoelectric material is Cr < 0.01 > Pb < 0.99 > Se < 0.75 > Te < 0.25-y > Cu, and y is greater than 0 and less than or equal to 0.002. By doping chromium in PbSe < 0.75 > Te < 0.25 >, on one hand, a resonance energy level can be introduced to increase the Seebeck coefficient, and on the other hand, a separated nano second phase can reduce the heat conductivity of crystal lattices; excessive copper is introduced on the basis of chromium-doped PbSe < 0.75 > Te < 0.25 >, on one hand, copper atoms fill in intrinsic lead vacancies in Cr < 0.01 > Pb < 0.99 > Se < 0.75 > Te < 0.25 > to increase the mobility, and on the other hand, generated high-density dislocation can further reduce the heat conductivity of crystal lattices. Under the collaborative optimization effect of chromium and copper co-doping on electric heat transportation, the thermoelectric performance of the Pb (Se, Te)-based thermoelectric material in a measurement temperature range is remarkably improved.

The invention relates to a preparation method of a spiral dislocation stacked imine covalent organic framework material. The preparation method comprises the steps of preparing an imine covalent oligomer and preparing the spiral dislocation stacked imine covalent organic framework material. The invention also provides the spiral dislocation accumulation imine covalent organic framework material obtained by the preparation method and application of the spiral dislocation accumulation imine covalent organic framework material in light absorption semiconductor materials. The preparation method provided by the invention is simple, convenient, universal and easy to implement, and the imine covalent organic framework material with the spiral dislocation stacking structure is obtained, is clear in material structure and good in crystallinity, is a novel topological structure, and has a good potential application prospect in the photoelectric field.

The invention discloses a manufacturing defect-oriented multi-scale composite material mechanical property prediction method, and belongs to the technical field of composite material mechanical property analysis. The method comprises the following steps: based on a multi-scale representative volume element (RVE) theory, respectively constructing parameterized models containing pores and fiber dislocations in a microscopic scale and a mesoscale; the equivalent elastic parameters under each scale are calculated through a finite element numerical homogenization technology, and an agent model is constructed in combination with an artificial neural network, so that the calculation cost is remarkably reduced, and the high-efficiency cross-scale prediction of the rigidity and strength performance of the composite material is realized. The method overcomes the defect of defect modeling of a traditional model, has high precision and high efficiency, and is suitable for performance evaluation and optimization design of composite material structures in the fields of aerospace, rail transit and the like.

The invention discloses a multi-scale simulation method for a thermal compression deformation behavior of TC4 titanium alloy, and belongs to the field of metal material processing simulation. Comprising the following steps: 1, carrying out thermal compression experiments at different temperatures to obtain a deformed sample; 2, analyzing the grain orientation, orientation difference angle and texture evolution of the sample by using an electron back scattering diffraction technology; 3, constructing a crystal plasticity finite element model, and simulating a polycrystalline deformation process; 4, constructing a molecular dynamics model, and simulating phase change and dislocation evolution in thermal compression and cooling processes; and 5, based on a multi-scale simulation result, hot working parameters are optimized, dynamic recrystallization and a beta-to-alpha phase change path are regulated and controlled, and grain refinement and performance homogenization are achieved. The invention discloses a correlation mechanism of the microstructure and the mechanical property in TC4 titanium alloy thermal compression deformation, and provides a theoretical basis for optimization of a thermal processing technology of a high-performance titanium alloy component in the aerospace field.

In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth and have large crystal augmentation parameters. The aluminum nitride single crystals advantageously have low densities of basal plane dislocations and large substrate versatility metrics.

The invention relates to the technical field of defect characterization of silicon carbide single crystal substrate materials, in particular to a silicon carbide corrosion device and a working method thereof. The silicon carbide corrosion device comprises a crucible furnace, an inner lifting shaft and a basket; the crucible furnace comprises a furnace body and a furnace cover, a heating element is arranged outside the furnace body, the furnace body is provided with an oxygen inlet used for introducing oxygen and a gas discharge port used for discharging gas, the furnace cover covers the furnace body, the top of the furnace cover protrudes upwards to form an outer lifting shaft used for lifting the furnace cover, and the outer lifting shaft is provided with a through hole; the inner lifting shaft is inserted into the through hole of the outer lifting shaft, and the basket is installed at the bottom end of the inner lifting shaft and used for containing wafers. According to the method, different dislocation morphologies of the heavily nitrogen-doped substrate can be accurately distinguished, the corrosion efficiency is improved, the safety of operators is guaranteed, meanwhile, the operation process is simplified, and large-scale popularization and application are facilitated.

The purpose of the present invention is to provide: a high-strength steel sheet having a tensile strength of 980 MPa or more and excellent fatigue strength; and a method for producing the high-strength steel sheet. A high-strength steel sheet having a prescribed component composition, in a surface layer region from the surface of the steel sheet to a position 1 / 10 of the sheet thickness, having an upper bainite phase in an area ratio of 75% or more but less than 98.5% as the main phase, and having a structure comprising a martensite phase and / or a retained austenite phase in an area ratio of 1.5% or more but less than 25% as the second phase, the steel sheet has a remainder structure phase other than the upper bainite phase, the martensite phase and / or the retained austenite phase in an area ratio of 2.0% or less, and the average crystal grain size of all phases in a surface layer region from the surface of the steel sheet to a position 1 / 10 of the sheet thickness is 6.0 [mu] m or less. The dislocation density of all the phases in a surface layer region from the surface of the steel sheet to a position 1 / 10 of the sheet thickness is 8.0 * 1014 / m2 or more.

The invention discloses a method for improving the strength and plasticity of a middle-high layer staggered energy metal material, and belongs to the technical field of metal material preparation and processing. According to the method, N times of deep cooling online treatment (N is larger than or equal to 2) are carried out on the middle-high layer staggered energy metal material, a deep cooling medium is liquid nitrogen or liquid helium, plastic deformation is achieved by means of continuous rolling and other processes, and online aging heat treatment can be carried out between the treatment chambers. After treatment, the material forms a nano twin crystal structure, so that the strength and plasticity are synergistically improved, and the high conductivity is kept. According to the method, the limitation of a traditional strengthening technology is broken through, dislocation motion and stress distribution are regulated and controlled through the nano twin boundaries, fracture is avoided, and the conductivity is guaranteed. Meanwhile, the technology can be operated in an integrated and continuous mode, is suitable for large-scale production of wires and thin strips, is high in machining efficiency and stable in performance batch, and meets the requirements for metal materials of high-end connectors in the fields of integrated circuits, new energy automobiles and the like.

The invention provides a gallium oxide single crystal dislocation characterization method based on mechanical exfoliation, which comprises the following steps: cutting a gallium oxide single crystal to obtain a polygonal single crystal sample; a tool with a sharp and hard surface is used for aligning the vertex angle of the single crystal sample, stripping is carried out along the gallium oxide cleavage surface, the mechanical stripping path is that the whole layer of surface extends towards the center along the vertex angle, and the whole layer of surface is completely stripped to obtain a clean and flat single crystal surface; carrying out surface activation pre-corrosion on the mechanically stripped single crystal; after ultrasonic cleaning, a sample is directly treated by a chemical corrosion method, and dislocation characterization of the gallium oxide single crystal is realized by analyzing the morphology and distribution of corrosion pits. The surface of the sample is processed by adopting a mechanical stripping method, a clean, flat and high-quality single crystal surface is obtained and is directly used for chemical corrosion method treatment to observe single crystal dislocation characteristics, multiple processing steps of the sample before chemical corrosion method treatment are simplified, and an efficient and feasible technical scheme is provided for gallium oxide single crystal dislocation characterization.

The invention discloses a preparation method of a high-temperature wear-resistant multilayer material on the surface of a precision part, and relates to a preparation method of a high-temperature wear-resistant coating on the surface of the precision part. The invention aims to solve the technical problem of poor wear resistance of the surface coating of the precision part at high temperature at present. According to the invention, a magnetron sputtering multi-target co-sputtering mode is adopted, a laminated composite film is formed on the surface of a precision part such as a shaft, and selected target materials are a CoCrFeNi target, a Ti target and a CuNb target. In the preparation process of the multi-layer film, due to the fact that a large number of interfaces exist and can effectively hinder dislocation movement, and a large number of self-lubricating matter phases are matched together, the hardness and abrasion resistance of the material are improved, and the service life of the multi-layer film is prolonged. And the multilayer film structure can optimize the high-temperature phase transformation resistance of the whole coating by adjusting the thickness ratio and high-temperature elements between the layers, so that the high-temperature performance of the coating is remarkably improved, and the high-temperature wear resistance of the CoCrFeNi / Ti / CuNb multilayer material is more excellent.

A method and device for a sensor using a graded wavelength configuring material. The wavelength configuring material can be configured for a selected wavelength using plurality of material regions of varying elemental concentrations in a continuous or step-wise pattern. The material compositions can include InP, InGaAs, GaAs, GaP, InGaAsP, InAs, InAlAs, InAlGaAs, InGaP, and the like. Further, the interface regions between adjacent material regions can be free from smearing of compositions. These material regions can also form a strained graded region overlying a buffer material and a silicon substrate. An array of photodetector materials can be formed overlying the wavelength configuring material. These materials can include an n-type material, an absorption material, a band transition material, and a p-type material, among others. The resulting device exhibits high performance at the selected wavelength and is characterized by low dislocation density.

The present invention provides a method for evaluating the hydrogen content in a steel sheet during an annealing process, comprising the steps of: estimating the microstructure of the steel sheet according to a temperature curve; and estimating the solubility C of hydrogen. H and the volume concentration of trapped hydrogen in the dislocation, C T and the volume concentration of hydrogen in the interstitial sites of the crystal lattice, C L and calculating the hydrogen content C at each time step of the annealing process. total =C L +C T and the hydrogen content C at each time step. total and outputting the result to a user.

The invention relates to a 4-inch low-dislocation indium antimonide lt; 211gt, 211gt; the invention discloses a preparation method of directional single crystals and belongs to the technical field of photoelectric materials. According to the method, a Czochralski method is adopted to grow the single crystal, a resistance furnace is arranged on the periphery of an induction coil of a heating device, and by accurately controlling heating conditions, designing a proper temperature field in a growth chamber and further combining growth conditions such as the state of a solid-liquid interface, the pulling speed, the rotating speed and particularly the shoulder expanding angle in the crystal growth process, the single crystal is obtained. The longitudinal temperature gradient in the crystal growth process is reduced, and the dislocation density of the large-size indium antimonide single crystal with the diameter of 4 inches can be obviously reduced, so that indium antimonide is enabled to be lt; 211gt, 211gt; the dislocation density of the directional single crystal is less than 100 / cm < 2 >.

To continue to seek improved SiC wafers with larger dimensions and related solid-state devices while overcoming challenges associated with conventional SiC wafers.SOLUTION: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.SELECTED DRAWING: Figure 1B

The invention provides a preparation method of a copper target material, and belongs to the technical field of metal target material preparation. According to the preparation method of the copper target material, the copper blank is subjected to hot rolling, thick columnar crystals in an original as-cast structure of the copper blank are crushed into fine grains through hot rolling, and the grain structure is more uniform; and the total volume of gaps among crystal grains is rapidly reduced, an original loose structure is compacted into a compact structure, densification treatment of the copper blank is achieved, and the dislocation density of the copper blank is increased. And then the copper target blank is cooled to 25-40 DEG C and then is subjected to cold rolling, crystal grains in the copper target blank are further rearranged, gaps between the crystal grains are further compressed, the crystal grain structure of the copper target blank is more compact, and the dislocation density is further improved. And finally, a temperature stepped annealing process is adopted, so that internal stress generated in the hot rolling and cold rolling processes can be effectively eliminated, and the hardness of the copper target blank cannot be excessively reduced due to the annealing process.

The invention provides a preparation method of a high-quality gallium nitride film based on a porous silicon nitride insertion layer. The preparation method comprises the following steps: firstly, sequentially depositing a GaN low-temperature buffer layer and a u-GaN layer subjected to compression strain on a patterned sapphire substrate; a porous SiNx insertion layer is deposited on the u-GaN layer in situ, a nanoscale hole structure penetrating in the thickness direction is formed in the porous SiNx insertion layer, and the u-GaN layer is exposed at holes; then GaN nanorods vertically grow at the holes, finally, growth conditions are regulated and controlled to enable the GaN nanorods to transversely grow and combine to form a flat high-quality GaN thin film, and a gap is formed between the porous SiNx insertion layer and the GaN thin film. According to the method, the internal stress of the GaN film can be effectively reduced, the dislocation density is reduced, the film quality is improved, the process is simple, and the method is suitable for large-scale and low-cost industrial production of the GaN film.

The invention relates to the technical field of heat treatment of steel for high-performance heading machine tools, and discloses an ultra-fine grain solid-phase regulation and control process for improving the structure uniformity of alloy steel, which comprises the following steps: collecting electrical parameters of an induction loop and identifying sudden change of parameters of a phase change point to determine a phase change leading edge position; triggering pulse disturbance heating at a preset depth to generate transient volume dislocation stress, breaking core carbide segregation and driving stress extreme values to gather towards the center; controlling the temperature rise rate to make the nucleation rate higher than the diffusion rate so as to form a dispersed crystal nucleus; according to the method, the phase change transient volume dislocation strain field is used for blocking the continuity of the net-shaped hard and brittle phase, the structure heredity of the large-scale section steel is eliminated, the total cross-section structure is highly homogenized, equiaxed crystals are ultra-refined, and the intergranular fracture resistance of the material in the service environment is enhanced.

A method for evaluating the hydrogen content in a steel sheet while being submitted to an annealing process, including the following steps: estimating the microstructure of the steel sheet according to the temperature curve, computing the solubility of the hydrogen CH, computing the volume concentration of trapped hydrogen in dislocations CT and the volume concentration of hydrogen in interstitial sites of the crystal lattice CL, calculating the hydrogen content Ctotal=CL+CT at each time step of the annealing process and outputting the hydrogen content Ctotal at each time step to a user.

The invention provides a silicon nitride material and a preparation method thereof, and a structural member, the silicon nitride material comprises a silicon nitride crystal, and the average minor axis grain size of the silicon nitride crystal is less than or equal to 3.5 [mu] m. The silicon nitride material provided by the invention comprises the silicon nitride crystal, the average short-axis grain size of the silicon nitride crystal is smaller than or equal to 3.5 microns, and the grain size is small, so that concentrated stress can be effectively reduced, dislocation slippage can be retarded, defects and discontinuity at a grain boundary can be reduced, a phonon transmission path is optimized, and the service life of the material is prolonged. Therefore, the silicon nitride material has the characteristics of high hardness and high thermal conductivity.

The invention discloses a pure metal / high-entropy amorphous alloy nano multilayer film with a three-dimensional interface and a preparation method, and belongs to the field of metal surface modification.The nano multilayer film comprises crystal layers and amorphous layers which are alternately stacked, the crystal layers are of a single-phase face-centered cubic structure, crystal grains are columnar crystals growing in the deposition direction and penetrating through component layers, and the amorphous layers are of a single-phase face-centered cubic structure. The amorphous layer keeps a long-range disordered structure, and an interface between the crystal layer and the amorphous layer is of a three-dimensional structure; different from a two-dimensional sharp interface, a three-dimensional interface has certain strength, movement of dislocation in the area is subjected to stress, and then the current situation that dislocation completes slippage, namely annihilation, is changed. According to the preparation method, dislocation is orderly arranged near a three-dimensional interface, so that accumulation occurs, heterogeneous deformation stress is remarkably enhanced through long-range ordered dislocation arrangement, and the strength of the material is effectively improved.

The invention relates to the field of preparation of ultraviolet photoelectric detectors, in particular to a p-i-n type ultraviolet photoelectric detector based on a 4H-SiC-GaN heterostructure and a preparation method of the p-i-n type ultraviolet photoelectric detector based on the 4H-SiC-GaN heterostructure, the dislocation defect is greatly reduced on the material structure level, a foundation is built for subsequent high-quality crystal growth, it is ensured that the structure of the detector is stable under complex working conditions, and the performance of the detector is improved. Material damage caused by thermal expansion and cold contraction or lattice stress is effectively avoided, and the reliability and durability of the detector are greatly improved. And the preparation process is fine. The MOCVD technology is adopted for growth, and parameters of all links are accurately regulated and controlled. Furthermore, high-purity metal is matched with proper evaporation rate and deposition thickness, and is combined with a high-vacuum physical vapor deposition technology, so that good ohmic contact between the metal and a semiconductor is ensured, the hole injection efficiency is high, the carrier recombination probability is reduced, the photoelectric conversion efficiency is effectively improved, and the wide market prospect is achieved.

The invention discloses a method for growing a high-quality III-group nitride material by using a Si / SiC composite substrate, and belongs to the technical field of semiconductors. Different from a traditional method for growing SiC on a Si substrate, the Si / SiC composite substrate is formed through bonding, and the problems of high interface state density, mismatch dislocation and the like caused by growing SiC on the Si substrate can be avoided. The porous silicon layer prepared on the Si substrate provides non-complete tight coupling bonding, so that the stress in the bonding process can be released, and the warping of the composite substrate can be reduced. And meanwhile, the introduced SiC layer is beneficial to improving thermal conductivity and buffering stress, and the crystal quality of epitaxial nitride is improved by utilizing the excellent characteristic of high quality of PVD-AlN deposited on single crystal alpha-Al2O3, so that a high-quality III-group nitride material is obtained. According to the method for growing the high-quality III-group nitride material by effectively controlling stress and reducing mismatch dislocation, the performance and reliability of the device are improved.

The invention discloses a high-crack-arrest and easy-to-weld super-thick YP550-grade steel plate and a manufacturing method thereof. The high-crack-arrest and easy-to-weld super-thick YP550-grade steel plate comprises the following components in percentage by weight: 0.050-0.085% of C, less than or equal to 0.12% of Si, 1.80-2.20% of Mn, less than or equal to 0.013% of P, less than or equal to 0.003% of S, 0.15-0.40% of Cu, 0.55-0.95% of Ni, 0.05-0.25% of Cr, 0.05-0.15% of Mo, 0.030-0.055% of Nb, 0.008-0.016% of Ti, 0.025-0.060% of Als, less than or equal to 0.0050% of N, 0.0010-0.0040% of Ca and the balance of Fe and The welding cold crack sensitivity index Pcm is less than or equal to 0.24%; the dislocation low-temperature mobility index theta of the BCC crystal structure is greater than or equal to 0.79; and in Ca treatment, the Ca / S ratio is 1-3, and (% Ca) * (% S) is less than or equal to 1.5 * 10 <-3 >. While high strength, excellent low-temperature toughness, high crack arrest characteristic and high elongation of the ultra-thick base metal steel plate are obtained, the low-temperature toughness of a fusion line and the low-temperature toughness of HAZ are also excellent during high heat input welding, and the ultra-thick base metal steel plate is particularly suitable for high-power offshore wind power pile legs, ocean platforms, cross-sea bridge steel tower structures, port machinery, engineering machinery and the like.

The present application relates to the technical field of silicon carbide crystal growth, and in particular to a growth device and growth method for a silicon carbide single crystal. The growth device comprises a crucible part and a heating part. The crucible part comprises a first crucible part and a second crucible part that are coaxially arranged from top to bottom; a seed crystal accommodating part is arranged in the middle of the top of the first crucible part; the second crucible part is provided with a cavity, and the cavity is a raw material accommodating part; the outer diameter of the first crucible part is less than that of the second crucible part; and the middle of the bottom of the second crucible part is recessed towards the first crucible part to form a recess. The heating part comprises a first heating part, a second heating part and a third heating part; the first heating part is arranged in the recess in the circumferential direction, the second heating part is arranged outside the second crucible part in the circumferential direction, the third heating part is arranged outside the first crucible part in the circumferential direction, and the inner diameter of the third heating part is less than that of the second crucible part. The growth device of the present application can reduce the defects such as inclusions, dislocation density, and microtubes in the silicon carbide single crystal, and improve the internal quality of the crystal.

The invention discloses a PVT crystal growth crucible capable of realizing diversion, which comprises a growth crucible, an induction coil, a seed crystal support and a diversion source device, and can effectively realize accurate control of a material transportation path through cooperation of a physical blocking platform structure with rear cavity diversion and special direction placement of seed crystals. The material is always transported along the specific direction of the growth interface step flow, so that the stability and repeatability of crystal growth are effectively improved, the crystal crystallization quality is improved, and the crystal dislocation density is reduced.