212 results about "Dislocation" patented technology

The invention discloses a manufacturing defect-oriented multi-scale composite material mechanical property prediction method, and belongs to the technical field of composite material mechanical property analysis. The method comprises the following steps: based on a multi-scale representative volume element (RVE) theory, respectively constructing parameterized models containing pores and fiber dislocations in a microscopic scale and a mesoscale; the equivalent elastic parameters under each scale are calculated through a finite element numerical homogenization technology, and an agent model is constructed in combination with an artificial neural network, so that the calculation cost is remarkably reduced, and the high-efficiency cross-scale prediction of the rigidity and strength performance of the composite material is realized. The method overcomes the defect of defect modeling of a traditional model, has high precision and high efficiency, and is suitable for performance evaluation and optimization design of composite material structures in the fields of aerospace, rail transit and the like.

The invention discloses a multi-scale simulation method for a thermal compression deformation behavior of TC4 titanium alloy, and belongs to the field of metal material processing simulation. Comprising the following steps: 1, carrying out thermal compression experiments at different temperatures to obtain a deformed sample; 2, analyzing the grain orientation, orientation difference angle and texture evolution of the sample by using an electron back scattering diffraction technology; 3, constructing a crystal plasticity finite element model, and simulating a polycrystalline deformation process; 4, constructing a molecular dynamics model, and simulating phase change and dislocation evolution in thermal compression and cooling processes; and 5, based on a multi-scale simulation result, hot working parameters are optimized, dynamic recrystallization and a beta-to-alpha phase change path are regulated and controlled, and grain refinement and performance homogenization are achieved. The invention discloses a correlation mechanism of the microstructure and the mechanical property in TC4 titanium alloy thermal compression deformation, and provides a theoretical basis for optimization of a thermal processing technology of a high-performance titanium alloy component in the aerospace field.

The invention relates to the technical field of heat treatment of steel for high-performance heading machine tools, and discloses an ultra-fine grain solid-phase regulation and control process for improving the structure uniformity of alloy steel, which comprises the following steps: collecting electrical parameters of an induction loop and identifying sudden change of parameters of a phase change point to determine a phase change leading edge position; triggering pulse disturbance heating at a preset depth to generate transient volume dislocation stress, breaking core carbide segregation and driving stress extreme values to gather towards the center; controlling the temperature rise rate to make the nucleation rate higher than the diffusion rate so as to form a dispersed crystal nucleus; according to the method, the phase change transient volume dislocation strain field is used for blocking the continuity of the net-shaped hard and brittle phase, the structure heredity of the large-scale section steel is eliminated, the total cross-section structure is highly homogenized, equiaxed crystals are ultra-refined, and the intergranular fracture resistance of the material in the service environment is enhanced.

The utility model provides a silicon carbide crystal growth device for improving the spiral dislocation defect. The silicon carbide crystal growth device comprises a crucible body and a plurality of graphite partition plates arranged in the crucible, and the graphite partition plates are arranged at the bottom of a raw material area of the crucible at equal intervals; the graphite clapboards are inserted into the silicon carbide powder at intervals, the heights of the graphite clapboards are in an arithmetic progression, so that the heights of the silicon carbide powder are also in an arithmetic progression, and the heights of the graphite clapboards and the silicon carbide powder in the corresponding areas are gradually reduced in the direction from the small surface area of the seed crystal to the direction far away from the small surface area. In the single crystal growth process, the silicon carbide powder in the graphite partition interlayer is heated to sublimate, and the distance between the surface of the silicon carbide powder and the growth surface of the seed crystal is reduced due to the height advantage of the silicon carbide powder in the graphite partition area with higher height, so that the growth component forms the component density advantage at the surface of the seed crystal in the area; the conversion and movement processes of screw dislocation in the crystal are effectively promoted, and the crystal quality is improved.

The invention discloses an equivalence evaluation method for testing the fracture behavior of an irradiation metal material based on a small sample, belongs to the field of mechanical property testing, and deeply researches the size effect problems of non-uniform deformation and crack initiation of the metal material under the irradiation condition through three research means of experiments, theories and simulation. And a powerful basis is provided for performance evaluation of the metal material under the irradiation condition. In the aspect of experiments, micro-stretching and micro-cantilever beam experiments of samples with different sizes under irradiation conditions are carried out, and a correlation mechanism between irradiation material crack initiation and sample sizes is analyzed. On the theoretical aspect, a dislocation channel-grain boundary interaction model is established, and prediction of fracture toughness of irradiation samples of different sizes is achieved. In the aspect of simulation, a finite element simulation system for non-uniform deformation, crack initiation and size effect of the metal material under the irradiation condition is established, and the influence of irradiation and sample size on microstructure evolution and macroscopic fracture behavior of the material is explored.

The invention discloses a surface coating for prolonging the fatigue life of metal and a preparation method of the surface coating. According to the coating, face-centered cubic structure layers and hexagonal system structure layers are alternately stacked to form a superlattice structure, the total thickness ranges from 1.0 micrometer to 1.5 micrometers, and a base material is titanium alloy. The thickness of the face-centered cubic structure layer is 4-6 nm, the thickness of the hexagonal system structure layer is 1-3 nm, the Mohs hardness difference between the two layers is not larger than 2, and the average grain size is 1-2 nm. According to the coating, a stable high-toughness interface phase is obtained through a specific crystal structure and thickness regulation and control, and dislocation slippage and crack propagation are effectively prevented. A magnetron sputtering method is adopted for preparation, and the process comprises the steps of substrate surface pretreatment, bias cleaning and alternate deposition. The coating shows excellent anti-fatigue performance under the cyclic load condition, and the service life of the titanium alloy component can be remarkably prolonged.

The invention provides a high-entropy rare earth doped WC hard alloy and a preparation method and application thereof, and belongs to the technical field of alloys. The precursor is prepared through wet codeposition, compared with ball-milling mixing, atomic-scale dispersion can be achieved, rare earth segregation can be avoided, high-entropy rare earth nano-particles are distributed in WC crystals and pinned in WC crystal boundaries, dislocation movement is hindered, meanwhile, WC is doped with high-entropy rare earth, all elements in the high-entropy rare earth act synergistically, the hardness and strength of the alloy are improved, and the performance of the alloy is improved. And compared with chemical plating, Co is plated through magnetron sputtering, the interface bonding strength can be improved, introduction of impurities is avoided, and the hardness and strength of the alloy are further improved. The result of the embodiment shows that the hardness of the prepared high-entropy rare earth doped WC hard alloy is 93.9 HRA or above, and the bending strength is 2980 MPa or above.

The invention discloses a patterned sapphire composite substrate and a preparation method, and relates to the field of LED epitaxial patterned substrate materials, and the patterned sapphire composite substrate comprises a substrate material layer which is made of sapphire, aluminum nitride or gallium nitride; a low refractive index layer material layer; the low-refractive-index material layer is attached to the periphery of the substrate material layer to form a conical inner and outer two-layer type composite pattern structure, and the density of the low-refractive-index material layer is in a gradient increase trend of 1.42-1.52 from a position close to the substrate to a position far away from the substrate. The method has the advantages that the light extraction efficiency is improved, the dislocation density is reduced, the crystal quality is enhanced, the etching process is optimized, the light extraction efficiency is improved, the process compatibility is high, and the cost effectiveness is high.

The invention discloses a surface etching method for revealing dislocation defects of tellurium indium lead single crystals, and relates to a method for revealing crystal defects. The invention aims to provide a surface etching method capable of accurately exposing crystal defects. The method comprises the following steps: firstly, carrying out directional cutting, multi-stage mechanical polishing and chemical mechanical polishing on a PIT single crystal to obtain a smooth and damage-free surface; and reacting iodine with concentrated nitric acid to generate iodic acid as a main oxidant, adding hydrofluoric acid for activation, diluting with an acetic acid-water mixed solution, and etching the crystal at a low temperature of 10 + / -1 DEG C under ultrasonic assistance. According to the method, the regular triangular conical etching pit can be formed on the PIT single crystal (001) surface, the depth is 100-300 nm, the pit bottom points to the [001] direction, and the dislocation defect is clearly revealed. The method has the advantages of clear etching morphology, high sensitivity, high reliability and simplicity and convenience in operation, and can be applied to the fields of PIT single crystal quality evaluation, defect analysis and growth process optimization.

The invention discloses a method and device for preparing a mixed crystal structure material through friction stir solid-phase deposition, and belongs to the technical field of heterostructure material preparation. According to the method, firstly, a deposition head is used for carrying out single-layer friction stir solid-phase deposition on a needed material, then a special corrugated roller is used for carrying out cold rolling to enable different positions of the surface of the deposition material to be subjected to different degrees of cold deformation, and therefore uneven high dislocation density is introduced into a deposition layer, and then next-layer friction stir solid-phase deposition is carried out on the surface of the deposition layer. In the friction-stir solid-phase deposition process, static recrystallization and static recovery rapidly occur in a local high-dislocation-density area to maintain fine grains, and grain growth rapidly occurs in a low-dislocation-density area due to heating, so that the whole deposition layer shows the mixed crystal structure characteristic that fine grains and coarse grains coexist; the block mixed crystal structure material can be prepared through stirring friction solid phase deposition and cold rolling circulation.

The invention relates to the technical field of metal material performance detection, and discloses a method for detecting ductile-brittle transition temperature of a metal material based on a thermal method. The method comprises the following steps: acquiring the average grain size of a material through three-dimensional characterization, quantitatively estimating the movable dislocation density generated by grain boundary thermal activation emission at a specific temperature in combination with a preset dislocation emission coefficient, and linearly superposing the movable dislocation density with the inherent pre-stored movable dislocation density of the material to obtain a total movable dislocation density estimated value. And comparing the total movable dislocation density calculated at different temperatures with the ductile-brittle transition critical threshold obtained from the material knowledge base to determine the critical temperature meeting the condition, namely the ductile-brittle transition temperature. According to the method, the mechanical prediction of the ductile-brittle transition temperature is realized by quantifying the contribution of a key dislocation source from a plastic deformation microphysical mechanism, and the dependence of a traditional method on a large number of destructive experiments is reduced.

The application provides a group III nitride structure and a manufacturing method thereof. In the manufacturing method, a first mask layer is used as a mask to etch a first group III nitride epitaxial layer to form a groove; a second mask layer is formed on at least the bottom wall of the groove, and the first group III nitride epitaxial layer is subjected to first epitaxial growth with the second mask layer as a mask to form a second group III nitride epitaxial layer which fills the groove and grows in a horizontal direction; and then the second group III nitride epitaxial layer is subjected to second epitaxial growth to form a third group III nitride epitaxial layer on the second group III nitride epitaxial layer and the first mask layer. Since the dislocations of the first group III nitride epitaxial layer mainly extend in the thickness direction, the first epitaxial growth which grows in a horizontal direction can block the dislocations from extending upwards, thereby significantly reducing the dislocation density of the second group III nitride epitaxial layer and the third group III nitride epitaxial layer.

The invention provides a mercury-cadmium-telluride material, a surface passivation heat treatment method thereof and an infrared detector, the surface passivation heat treatment method of the mercury-cadmium-telluride material comprises the following steps: S1, pretreating the surface of a mercury-cadmium-telluride substrate; s2, depositing and growing a high-component HgCdTe film layer on the surface of the tellurium-cadmium-mercury substrate; s3, depositing and growing a CdTe passive film layer on the surface of the high-component HgCdTe film layer; s4, depositing and growing a ZnS passive film layer on the surface of the CdTe passive film layer; and S5, carrying out passive heat treatment on the tellurium-cadmium-mercury substrate treated in the step S4 under the protection of an inert atmosphere. The three composite passivation film layers are adopted, and the high-component HgCdTe film layer and the HgCdTe substrate material are basically consistent in component, crystal structure and lattice constant, so that the problems that the CdTe film layer preparation process is high in requirement, CdTe / HgCdTe generates stress and dislocation and the like when the traditional CdTe passivation film layer is adopted as the first passivation material layer are solved; the process requirement of preparation of the CdTe passive film layer is reduced, the complexity of a heat treatment process is reduced, and the process window of HgCdTe device processing is widened.

The application discloses a substrate, a forming method of the substrate and a light emitting diode. The substrate comprises a modification layer and a body layer. The modification layer extends from a first surface of the substrate to a second surface in a direction perpendicular to the substrate. The body layer extends from a side of the modification layer away from the first surface to the second surface. A side of the body layer away from the modification layer is formed as the second surface of the substrate. The modification layer comprises a diffusion element other than the body layer. The diffusion element can change a lattice parameter of a surface of the substrate, ensure a crystal form of the substrate unchanged, and reduce a lattice mismatch between the substrate and an epitaxial layer and a dislocation density of the epitaxial layer. The application performs annealing treatment on the substrate when forming the modification layer. Therefore, the content of doped atoms and the lattice parameter of the modification layer gradually change from the first surface to the second surface of the substrate. The lattice matching degree with the epitaxial layer is greatly improved. The problem that high temperature warping divergence is caused by excessive residual stress of the substrate is solved. The internal quantum efficiency and wavelength uniformity of the epitaxial layer are optimized.

The application discloses a single crystal growth ending method and system based on convex solid-liquid interface control and belongs to the technical field of semiconductor material preparation. The method is applied to the ending stage of Czochralski method single crystal silicon growth, the heating power, the pulling speed, the crystal rotation state and the crystal lifting state are cooperatively controlled, the solid-liquid interface is adjusted from a concave surface to a plane and a convex shape towards the melt in four steps, and the rapid ending is completed under the stable convex interface; the matching system comprises a single crystal furnace body and a heating power and a pulling parameter control module, and further comprises a state monitoring and central control module, so that the accurate cooperation and automatic control of process parameters are realized. The application fundamentally eliminates the generation conditions of dislocation back extension and hidden cracks, reduces the occurrence rate, shortens the ending time, has strong process controllability, can be upgraded on the existing equipment, and has a good industrialization and popularization prospect.

This invention relates to the field of materials science, specifically to a method for preparing a high-bonding, ultrahard nanolayered thin film, the film itself, and its applications. The film comprises a Cr / Ti metal bonding layer, a CrTiN intermediate layer, a TiNC transition layer, and an a-C:Ti nanocomposite surface layer sequentially deposited on a substrate surface. The a-C:Ti ultrahard nanolayered thin film prepared by this invention achieves multi-layer stacking at the microscale by controlling the periodic modulation structure of the bonding layer, intermediate layer, and transition layer, effectively suppressing dislocation and crack propagation. Through Ti doping modification and gradient periodic modulation structure design, the internal stress of the film is reduced, improving its bonding strength, wear resistance, and toughness, reducing the risk of coating cracking or peeling, and enhancing the film's service stability. The a-C:Ti ultrahard nanolayered thin film of this invention is particularly suitable for applications such as precision machining tool coatings, surface strengthening of aero-engine gears and bearings, and wear protection of microelectromechanical systems (MEMS).

The application relates to a preparation method of an epitaxial structure, the epitaxial structure and application thereof. The preparation method of the epitaxial structure comprises the following steps: providing a substrate; introducing a nitrogen source and a group III source, and epitaxially growing at least one dislocation blocking layer on the substrate by adopting a molecular beam epitaxy process; the dislocation blocking layer comprises a first growth layer and a second growth layer which are stacked in sequence, the first growth layer has a three-dimensional island-shaped morphology, the bottom surface of the second growth layer is in contact with the surface of the first growth layer which is away from the substrate, and the surface of the second growth layer which is away from the substrate has a planar structure; during the growth of the first growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is greater than 1, and during the growth of the second growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is less than 1; and a group III nitride material layer is epitaxially grown on the dislocation blocking layer by adopting the molecular beam epitaxy process. In this way, part of the dislocations can be terminated in the dislocation blocking layer, so that the dislocation density in the epitaxial structure is reduced.

The invention relates to the technical field of semiconductor materials, in particular to a method for continuously growing ultra-large-thickness silicon carbide crystals, which comprises the following steps: a, preparing a growth device; preparing silicon carbide single crystals by adopting a PVT resistance method growth furnace with a partition heating module; b, raw material and seed crystal pretreatment; filling a crucible with silicon carbide powder, and fixing the seed crystal on a graphite support in the crucible; c, temperature field and atmosphere regulation and control; closing the growth furnace and vacuumizing; then inert gas is introduced into the furnace, and the interior of the furnace body is heated to a proper temperature; d, crystal growth; in the growth process, the distance between the growth face of the crystal and the material face of the powder in the filler bin is controlled to be kept constant, and meanwhile the material face height of the powder in the filler bin is kept unchanged; e, cooling and crystal taking; and cooling the furnace to room temperature, opening the growth furnace and taking out the silicon carbide crystals. According to the invention, the temperature field in the growth process of silicon carbide can be stabilized, dislocation, stacking fault and even crack defects of crystals are avoided, and the crystallization quality is improved.

The invention discloses a preparation method of a GaN single crystal film on a high thermal conductivity substrate, and belongs to the field of semiconductor film materials. Two-dimensional boron nitride is introduced as a functional layer, and low-temperature nucleation and high-temperature epitaxy processes are combined, so that high-quality combination of the single-crystal AlN transition layer with metal lattice polarity and the heat dissipation substrate is realized, the interface thermal resistance brought by a traditional bonding technology is effectively reduced, and the overall heat dissipation efficiency is improved; by means of the AlON lattice polarity inversion layer and the regrowth process, controllable conversion from nitrogen lattice polarity to metal lattice polarity is successfully achieved, the component gradual change structure and the dislocation filtering layer design are combined, the dislocation density in the thin film is remarkably reduced, and the crystallization quality of the material is improved. The method has the advantages of low epitaxial structure complexity, low process difficulty and clear and controllable process path, and is suitable for large-scale preparation. The method has important application potential in the high-end technical fields of electric automobiles, efficient energy conversion, advanced display, communication systems and the like.

The invention relates to the technical field of metal material surface treatment, and discloses a vacuum coating process for a metal substrate and an anti-aging anti-corrosion film, which comprises the following steps: depositing a transition layer, depositing an anti-corrosion film main layer, collecting a negative pulse rising edge displacement current slope in real time, determining a charge adsorption saturation point according to a first-order derivative zero crossing point of the slope, a nanosecond controlled overshoot stage is driven to induce transverse migration of atoms, the nanosecond controlled overshoot stage is switched to a platform stage to maintain deposition, and residual charges are eliminated in a neutralization stage. Instantaneous high-momentum ion flow generated by dynamic response of a sheath layer is used for improving the density of a film layer, and lattice dislocation migration is eliminated in cooperation with an energy release mechanism of a pulse gap; the physical contradiction of cracking caused by accumulation of residual compressive stress in a high-density film is solved, the film layer structure is in a low-stress equilibrium state, the interface anchoring strength is enhanced, and penetration of a corrosive medium is blocked.

The application discloses a preparation method of a fine-grain high-purity large-size aluminum plane target, which comprises the following steps: hot processing, cold rolling, annealing treatment and surface treatment. Through multi-pass transverse and longitudinal rolling combined with rapid cooling, the coarse columnar crystal of an aluminum ingot is broken, dynamic recrystallization is induced, and secondary coarsening is inhibited, so that an internal dense aluminum slab is formed; the cold rolling and intermediate annealing introduce a high-density dislocation network, and the static recrystallization driving force is enhanced; the bidirectional temperature gradient annealing realizes the uniform distribution of fine grains, and the uniformity of the structure is improved; and the surface treatment ensures a smooth surface and removes impurities. The method significantly improves the mechanical strength, uniformity and defect control of the target material, meets the high-performance requirements of the large-size aluminum plane target in the manufacturing of super-large displays, optimizes the sputtering efficiency and film thickness consistency, and has remarkable economic benefits and industrial application prospects.

The invention provides a refractory high-entropy alloy with a layered heterostructure and a preparation method and application of the refractory high-entropy alloy, and belongs to the technical field of light refractory high-entropy alloys. Low-density and high-melting-point Ti, Nb and Zr are selected as main elements, V is added to cooperate with Al to achieve the light weight effect, the content of all the elements is controlled, the alloy phase separation tendency is reduced, a single body-centered cubic disordered solid solution is kept, uneven deformation in the cold rolling deformation process is used for forming a high-dislocation-density deformation band, and the high-dislocation-density deformation band is formed; ni is added to promote a deformation belt to preferentially nucleate and grow in the recrystallization annealing process, then a layered heterostructure composed of double-peak crystal grains is obtained, and the plasticity of the alloy is improved while the alloy strength is guaranteed.

This invention relates to the field of glass-ceramic materials, and discloses a glass-ceramic, its preparation method, and its applications. Based on the total mass of the glass-ceramic, it comprises: 11-18 wt.% α-quartz phase, 47-55 wt.% lithium feldspar phase, 22-31 wt.% lithium disilicate phase, and 6-13 wt.% glass phase; the glass-ceramic has a Vickers hardness ≥670 HV and a haze ≥90%. This invention starts from the design of the material's microstructure. Through the synergistic effect of the various components of the crystalline and glass phases, the glass-ceramic achieves bulk light-shielding through internal crystallization. Simultaneously, the α-quartz reinforcing phase forms a dispersed strengthening effect, effectively hindering dislocation and crack propagation. This results in the glass-ceramic of this invention possessing both extreme light-shielding properties and high hardness.

The application provides a composite substrate based on aluminum nitride ceramic material, comprising: (a) an aluminum nitride ceramic substrate; (b) a pattern structure layer, comprising a pattern structure on the aluminum nitride ceramic substrate, the pattern structure being periodically and spacedly distributed on the aluminum nitride ceramic substrate; and (c) a polycrystal coating layer, the polycrystal coating layer being a continuous layer covering the pattern structure layer and the aluminum nitride ceramic substrate not covered by the pattern structure. The composite substrate based on the AlN ceramic material provided by the application is used for growing GaN or AlN single crystal material, and meanwhile, the cost of the substrate material is reduced while avoiding thermal mismatch dislocations.

This invention provides a method for determining the dislocation density of diamond single crystals using cathodoluminescence spectroscopy, which can be applied to the field of semiconductor material characterization and defect detection. This method draws upon and develops upon colorimetric methods based on ultraviolet light intensity, utilizing the idea of ​​single measurement and quantitative analysis based on different peak ratios. It also incorporates a decoupled architecture of "destructive calibration + non-destructive measurement." First, at least five diamond single crystal calibration samples with gradient dislocation densities are selected. Cathodoluminescence spectra are acquired under low temperature and high vacuum conditions. The integrated intensity I of the A-band emission peak related to dislocations is extracted through multi-peak fitting. A and the integral intensity I of the free exciton emission peak FE Calculate the ratio R=I A / I FE Subsequently, the calibration sample was subjected to hydrogen-oxygen dry etching, and the surface dislocation density N was obtained by statistically analyzing the etching pits. The proportionality coefficient k was obtained by linear fitting with N as the ordinate and R as the abscissa. For the sample to be tested, the spectrum was collected under the same conditions and the ratio R was calculated. Substituting this value into the model N=k·R, the surface dislocation density can be quantitatively obtained.

The application relates to a method for realizing low-temperature diffusion connection of metal materials through surface proton irradiation, and relates to the welding technical field.The application realizes the diffusion connection of Zr-4 alloy under the condition of low temperature of 600 DEG C to 800 DEG C by preparing an irradiation layer containing a large number of lattice defects and dislocations on the surface of a metal base material through a proton irradiation method, so that the element diffusion channel is obviously increased, the welding joint strength reaches 290 to 420 MPa, and the best can exceed 90% of the base material strength.The application can obtain a method for realizing low-temperature diffusion connection of metal materials through surface proton irradiation.

The substrate pushing device comprises a shell, a push rod and two push claws, the push rod is fixedly connected with the shell, the shell is provided with an installation cavity, the two push claws are oppositely arranged and movably installed in the installation cavity respectively, the length of the portions, stretching into the installation cavity, of the push claws is adjusted, and the push claws are arranged in the installation cavity. And the distance between the two push claws is changed. Compared with an existing fixed push head structure which cannot cope with the problems of dislocation and scratching caused by deformation of the substrate and cannot meet the adaptation requirement under the condition that the specification of the substrate is frequently changed, the distance-adjustable push head structure is adopted, the contact point of the push head and the substrate can be moved to the edge, the dislocation problem is effectively solved, meanwhile, the push head structure can be compatible with the substrates with different widths, and the production efficiency is improved. And machine compensation setting does not need to be frequently adjusted, so that time and labor are saved.

The application provides a metal substrate based nitride template, relates to the technical field of semiconductors and communication, and comprises a metal substrate, a two-dimensional material film, an inert material pattern mask layer and a nitride epitaxial layer; the surface of the two-dimensional material film is subjected to activation treatment for providing nucleation sites for growth of the nitride material and inhibiting interface reaction in a high-temperature epitaxial process; the inert material pattern mask layer realizes selective epitaxy of the nitride material, thereby realizing lateral over-epitaxial growth, reducing dislocation density in the nitride epitaxial layer and improving crystal quality of the epitaxial layer. The application also provides a preparation method and application of the template; the composite metal substrate structure of the metal substrate / two-dimensional material film / inert material pattern mask layer can realize direct high-temperature epitaxial growth of high-quality and stress-free nitride material, the template has high scalability, and is suitable for epitaxy and devices of deep ultraviolet LEDs and second-generation semiconductor materials such as GaAs and InP.

This indium phosphide substrate has a principal surface. The diameter of the principal surface is 149–205 mm. The principal surface is formed by an outer peripheral region and a central region. The central region is divided into first square regions with sides 1 mm in length and arranged in a lattice formation. When a square shape that encloses nine of the first square regions and has sides 3 mm in length is moved 1 mm at a time in a first direction and in a second direction, regions specified by the square shape are considered a plurality of second square regions. The proportion of the number of the plurality of second square regions with a dislocation density of 0 / cm2 to the total number of the plurality of second square regions is at least 30%.

The invention discloses a method for obtaining a basal plane uniaxial texture in a pure zirconium plate through one-way rolling. The method comprises the following steps: sequentially polishing a pure zirconium plate sample to be bright step by step by adopting different numbers of abrasive paper, cleaning and drying; the sample is subjected to vacuum tube sealing treatment and then subjected to a heat treatment process, the temperature is increased to 950-1050 DEG C at the speed of 4-6 DEG C / min and stabilized for 9-11 min, then the sample is placed in the furnace to be subjected to heat preservation for 1-1.2 h, and the sample is taken out to be subjected to air cooling after the heat preservation time is reached; rolling treatment is conducted on the pure zirconium plate sample, the rolling strain rate is 10-20 s <-1 >, the single-pass rolling reduction is 0.1-0.15 mm, the total rolling reduction is 20-50%, and the rolling temperature range is 0-25 DEG C. According to the method, a pure zirconium plate sample is subjected to heating and heat preservation (in a complete beta-phase region) and then is subjected to air cooling treatment, so that a disordered oriented thick lath structure is obtained; and in the rolling deformation process, a large number of {10-12} and {10-22} twin crystals can be generated and act together with dislocation slippage, and the orientation of original crystal grains is remarkably changed, so that a basal plane uniaxial texture which cannot be generated by conventional rolling machining is obtained.