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3182 results about "Dislocation" patented technology

In materials science, a dislocation or Taylor's dislocation is a crystallographic defect or irregularity within a crystal structure. The presence of dislocations strongly influences many of the properties of materials.

Bulk nitride mono-crystal including substrate for epitaxy

The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1.0 μm thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1.0 μm thick and its surface dislocation density is less than 106/cm2. Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.
Owner:AMMONO SP Z O O (PL) +1

Thermal enhance MCM package and manufacturing method thereof

A thermal enhance multi-chips module (MCM) package mainly comprises a first package, a first carrier, a second package, a second carrier, an intermediate substrate and a cap-like heat spreader. The intermediate substrate has an opening. The first carrier and the second carrier are electrically connected to the first package and the second package respectively. The second package is accommodated in the opening and electrically connected to the first package via the first carrier, the second carrier and the intermediate carrier. The cap-like heat spreader has a supporting portion and an alignment portion wherein the supporting portion is connected to the alignment portion to define a cavity. The cavity not only accommodates the first package, the first carrier, the second package, the second carrier and the intermediate substrate but also provides alignment mechanism by the supporting portion and the alignment portion to prevent the dislocation after all the components of the thermal enhance MCM package are connected with each other. Furthermore, the first carrier has a first side and the second carrier has a second side. The first side and the second side both have grounding portions, for example recessed portions and metal layers, for providing a ground shielding of the first package and the second package against the outside. In addition, the grounding portions also provide thermal paths to increase the ability of the heat dissipation. Besides, a method for manufacturing the thermal enhance MCM package is provided.
Owner:ADVANCED SEMICON ENG INC
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