37results about How to "Improve crystal quality" patented technology

The application discloses a multi-channel shaft kiln for calcining magnesite, wherein a distributing vehicle and a discharging device are located at the top and bottom of a kiln body. The kiln body is provided with a preheating section, a calcining section and a roasting section from top to bottom, and square strip-shaped channels are arranged in the kiln. A combustion chamber is arranged in the furnace wall on both sides of the calcining section with a width of 40-80 cm, the combustion chamber is built by hollow integral combustion bricks, the combustion chamber is communicated with the calcining section by cross-distributed through holes, the through hole outlet is downwardly inclined, and an inclined convex block is arranged at the top. The lower part of the roasting section is provided with an upper collecting opening and a lower expanding opening structure, an air pressure pipe is arranged in the inclined brick of the upper collecting opening, the opening of the air pressure pipe is downwardly inclined and communicated with the roasting section, and the lower expanding opening is matched with the upper semicircular surface of the discharging device. The middle part of the upwardly inclined distributing main pipe of the distributing vehicle is communicated with the branch pipe which is inclined and changed in direction, and a change valve is arranged in the main branch pipe. The application provides a comprehensive solution of the shaft kiln with high calcining quality, energy saving, low investment and long service life for calcining magnesite, and can also be used for high-quality calcining of small-particle materials.

This invention discloses a method for preparing high-purity oxygen-free copper, relating to the field of metallurgical technology. The method includes multi-stage electrolytic refining, gradient-heating vacuum melting, inert gas-protected refining, electron beam melting, hydrogen plasma arc melting, directional solidification, and post-treatment steps. The multi-stage electrolytic refining utilizes a specific component electrolyte and periodically commutated current; vacuum melting is combined with bidirectional electromagnetic stirring; inert gas-protected refining is combined with a gradient reduction composite covering agent; electron beam and hydrogen plasma arc melting achieve deep purification and deoxidation; and directional solidification and two-stage annealing ensure product performance. The high-purity oxygen-free copper prepared by this invention has a conductivity of 102.3% IACS, a copper content ≥99.9999%, and an oxygen content <1.0 ppm. It exhibits high purity, low oxygen content, and excellent conductivity. The process is stable and controllable, making it suitable for high-end electronics applications.

This invention relates to the preparation technology of two-dimensional material composites, specifically a method for coating two-dimensional materials onto the surface of non-metallic particles based on a high-temperature growth process. This method is suitable for the large-scale preparation of continuously coated non-metallic particulate materials. The invention employs a three-step method to form continuously coated two-dimensional materials on the surface of non-metallic particles: First, a continuous metal catalyst coating layer with a nanometer-thickness is formed on the surface of the non-metallic particles; then, the coated non-metallic particles are mixed with micron-sized powder of the same metal catalyst composition; next, a continuously coated two-dimensional material film is grown on the surface of the non-metallic particles using a high-temperature catalytic reaction; finally, the metal catalyst is removed, yielding the two-dimensional coated non-metallic particulate material. This invention can achieve the formation of two-dimensional material coating layers on the surface of a large number of non-metallic particles. The two-dimensional materials exhibit continuous, non-overlapping microstructures, high coating rates, and high crystallinity. Furthermore, this method is easily scalable.

This invention provides a microgap suspension device and a microgap inverted suspension heat treatment process, comprising the following steps: adding p-aminobenzenesulfonic acid to a solvent, mixing thoroughly, and then adding carbon nanotubes to obtain a carbon nanotube dispersion; stirring the carbon nanotube dispersion under heating conditions to obtain a p-aminobenzenesulfonic acid-modified carbon nanotube dispersion; coating a substrate surface with a lead bromide solution, then coating the lead bromide surface with a cesium bromide solution, then coating the cesium bromide surface with the p-aminobenzenesulfonic acid-modified carbon nanotube dispersion; and finally performing heat treatment through a microgap suspension device to form a photoactive layer film. The microgap inverted suspension heat treatment process of this invention, through controllable height suspension heat treatment, ensures that the film is almost unconstrained by the rigidity of the substrate during thermal expansion and cooling contraction, thus making it suitable for flexible substrates as well. It also avoids direct contact damage to flexible substrates during high-temperature heat treatment.

This invention relates to the field of photoelectric detection technology, specifically to a diamond immersion detector. The invention utilizes ultra-wide bandgap boron-doped p-type diamond single crystal (PDSC) as the photoelectrode to construct a vacuum ultraviolet immersion photodetector with a PDSC-ultrapure water-Pt structure. The PDSC immersion photodetector prepared by this invention exhibits a responsivity as high as 87.8 mA / W under zero bias and 193 nm excitation wavelength conditions, which is close to the photoresponsivity shown by standard commercial Si detectors; furthermore, under low optical power excitation, the responsivity of the PDSC immersion detector can reach as high as 670 mA / W. The immersion detector of this invention is a low-cost, self-powered, and highly sensitive vacuum ultraviolet photodetector with good stability, showing promising application prospects for 193 nm power monitoring in deep ultraviolet light source lithography machines.

This application relates to the field of two-dimensional semiconductor material preparation technology, specifically to a method for preparing monolayer molybdenum disulfide by dual-sulfur source chemical vapor deposition, comprising the following steps: Step 1, providing a chemical vapor deposition reaction chamber having an upstream region, a growth region, and a downstream region; Step 2, arranging a molybdenum-containing precursor in the growth region, and arranging a substrate above or opposite to the molybdenum-containing precursor; Step 3, arranging a first sulfur-containing precursor in the upstream region and a second sulfur-containing precursor in the downstream region; Step 4, introducing a carrier gas into the reaction chamber and heating it to cause the first sulfur-containing precursor, the second sulfur-containing precursor, and the molybdenum-containing precursor to volatilize and undergo a chemical vapor deposition reaction on the substrate surface to form a monolayer molybdenum disulfide. This invention employs a dual-sulfur source strategy, achieving large-size, uniform, and low-defect preparation of monolayer MoS2, facilitating widespread application.

The application discloses high-quality bismuth-based perovskite monocrystals and a preparation method and application thereof. The preparation method of the high-quality bismuth-based perovskite monocrystals comprises the following steps: S1, preparing a single crystal growth precursor solution of the bismuth-based perovskite; S2, performing heat aging treatment on the prepared single crystal growth precursor solution; and S3, controlling the single crystal growth precursor solution after the heat aging treatment to crystallize and grow the bismuth-based perovskite monocrystals. The heat aging process of the precursor solution can obviously reduce the nucleation rate, effectively improve the crystallization quality, and finally obtain large-size high-quality bismuth-based perovskite monocrystals. The method has the advantages of simple process, strong operability, mild growth conditions, low required temperature, energy saving, low equipment requirement, low cost, high success rate, no need of additional seed crystals, and continuous growth of large-size high-quality perovskite monocrystals.

The utility model relates to high -purity antimony processing equipment technical field, concretely is a kind of high -purity antimony vacuum distillation pipe device, including bushing, for guiding antimony steam to enter into tray inside;Tray, tray is provided with gas guide hole, grating, for condensing receiving material;Conical tube, conical tube is conical, for low boiling point impurity and a small amount of antimony condensation.The high -purity antimony vacuum distillation pipe device in this device, by setting 5-10 trays from top to bottom in bushing, and the gas guide hole of adjacent two layers of trays is cross arrangement, make steam present S type route movement.This design greatly increases the movement path and contact area of antimony steam in device, effectively controls steam flow state, avoids the phenomenon that antimony steam appears uneven distribution, over-condensation or condensation is not sufficient in condensation process, significantly improves the condensation efficiency and crystallization quality of high -purity antimony.

The application discloses a method for epitaxially growing an alpha-Ga2O3 film based on a tert-butyl alcohol precursor under normal pressure by MOCVD, and comprises the following steps: cleaning a substrate, placing the cleaned substrate on a reaction chamber base of a metal organic chemical vapor deposition (MOCVD) device, introducing nitrogen into the reaction chamber, adjusting the air pressure of the reaction chamber to normal pressure, performing high-temperature pretreatment on the substrate in the reaction chamber, wherein the high-temperature pretreatment is performed at 1000-1200 DEG C for 15-30 min, cooling the substrate to 570-630 DEG C, taking triethyl gallium as a gallium source precursor and taking tert-butyl alcohol as an oxygen source precursor, and growing an alpha-Ga2O3 film sample on the substrate, and cooling the alpha-Ga2O3 film sample to room temperature while introducing nitrogen to obtain an alpha-Ga2O3 film. The method can be used to prepare a high-quality, high-speed-grown pure-phase metastable alpha-Ga2O3 film.

The application provides a semiconductor device and a manufacturing method thereof, and the semiconductor device comprises a substrate, a first gallium oxide bulk layer on the substrate, a gallium oxide epitaxial layer on the first gallium oxide bulk layer, wherein the gallium oxide epitaxial layer comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and a second gallium oxide bulk layer on the gallium oxide epitaxial layer. The gallium oxide epitaxial layer of the application comprises a plurality of stacked structures, each of the stacked structures comprises a silicon-doped gallium oxide layer and a non-silicon-doped gallium oxide layer which are stacked, and the gallium oxide bulk layers are respectively formed in front of and behind the gallium oxide epitaxial layer, so that the electron mobility of the gallium oxide epitaxial layer can be effectively improved, the doping efficiency is improved, the crystal quality of the gallium oxide epitaxial layer is improved, and the gallium oxide epitaxial layer is widely applied in the field of power devices.

This invention belongs to the field of third-generation semiconductor material processing technology. It discloses a method and system for laser-based lift-off of curved silicon carbide. This invention establishes a target curved surface model and generates a corresponding three-dimensional processing path. During laser scanning, the beam wavefront is modulated in real time, and the lateral position and depth of the focus point within the material are simultaneously controlled. Optical aberrations caused by the material's high refractive index are compensated for. The entire process requires no mechanical movement of the focusing axis, forming a continuous and precise three-dimensional modification layer within the ingot. Finally, external force is applied along this modification layer to achieve low-damage, high-efficiency curved surface lift-off. This invention overcomes the limitation of traditional laser lift-off, which can only obtain planar wafers. It can directly construct any preset three-dimensional curved surface separation path within a silicon carbide ingot with a flat surface, thereby lifting out silicon carbide wafers with specific curvatures such as convex, concave, or free-form surfaces in a single operation.

This invention discloses a method for preparing halide perovskite thin films and their applications. The preparation method includes the following steps: S1, providing a substrate; S2, mixing a precursor salt with a lactone solvent to form a precursor mixture; S3, depositing the obtained precursor solution onto the surface of the substrate and annealing it to form a perovskite thin film. This invention, by introducing a monocyclic lactone, overcomes the limitations of the traditional DMF / DMSO solvent system, significantly expanding the material compatibility range of solution processing, enabling stable film formation over a wider range of concentrations and temperatures. Utilizing the unique coordination ability and volatility characteristics of this type of lactone, crystallization kinetics can be effectively controlled, promoting more uniform and dense perovskite grain growth, significantly reducing the defect density inside the film, thereby obtaining a film with high crystallinity.

This invention discloses a method for preparing nitride thin films, belonging to the field of advanced functional thin film material preparation technology. The method employs pulsed laser deposition technology and includes the following steps: placing an alloy target material prepared according to the stoichiometric ratio of the target thin film in a deposition chamber, evacuating to a background vacuum ≤, heating a single-crystal substrate to 400-1000℃, turning on a 13.56MHz radio frequency ion source and adjusting the power to 50-500W for ionizing nitrogen gas; injecting ammonia or nitrogen gas with a purity ≥99.999% into the chamber through a high-speed pulse valve with a response delay ≤50μs and an opening / closing time ≤200μs, precisely synchronized with the laser pulse electronic signal; the high-energy metallic plasma plume generated by the laser pulse ablation of the alloy target material undergoes an instantaneous gas-phase reaction with the synchronously injected reactive gas, while simultaneously bombarding the substrate surface with a high-energy nitrogen ion beam, controlling the deposition parameters to deposit a nitride thin film on the substrate, which can be cooled after in-situ annealing.

The invention belongs to the technical field of nano materials, and particularly relates to a preparation and transfer method of an inclined chromic oxide single-crystal nanosheet. The preparation method specifically comprises the following steps: uniformly mixing potassium chromate and chromic chloride to obtain precursor powder; transferring the precursor powder into a porcelain boat, and covering the surface of the precursor powder with a molecular sieve; enabling the oxide layer of the SiO2 / Si substrate to face downwards and obliquely cover the molecular sieve; and then transferring into a vacuum tube furnace, heating and reacting, and cooling to obtain the inclined chromic oxide single crystal nanosheet on the surface of the SiO2 / Si substrate. The inclined chromium oxide single crystal nanosheet is placed on other clean substrates, and the chromium oxide single crystal nanosheet is transferred to other clean substrates through mechanical pressing. The method provided by the invention has the advantages of good controllability, good repeatability, high yield, low cost, no pollution in transfer and the like.

This invention discloses a mica nanosheet and its preparation method, belonging to the field of two-dimensional nanofiller technology. The preparation method disclosed in this invention involves heat-treating bulk mica, followed by purification in an aqueous nitric acid solution to obtain pretreated mica powder; dispersing the pretreated mica powder in a solvent to obtain a mixed slurry; adding an oxidant to the mixed slurry and stirring the mixture, then adding a small-molecule lithium salt to further react, obtaining a pretreated slurry; adding grinding beads to the pretreated slurry for sand milling to achieve exfoliation; subsequently releasing the exfoliated slurry and performing post-processing to obtain mica nanosheets. This method solves the technical problem of simultaneously achieving efficient, green, and controllable exfoliation, and possesses scalability potential, which is difficult to achieve with existing methods.

The utility model relates to the technical field of production of creatine pyruvate, in particular to a crystallization device for creatine pyruvate. The upper side wall of the crystallization kettle is fixedly installed with a kettle cover, and the top of the kettle cover is fixedly connected with two feed pipes in a symmetrical manner. When the upper end of the top block is in contact with the side wall of the embedded groove, the baffle blocks the leakage hole, the crystal seeds can be put into and temporarily stored in the inside of the storage cylinder through the feed pipe, when feeding is needed, the motor drives the stirring rod to rotate slowly, the stirring rod drives the two storage cylinders to rotate synchronously, the side wall of the embedded groove and the chamfer push the top block downward, the top block drives the baffle to move downward synchronously through the extension rod, when the top block completely slides out of the embedded groove and is in contact with the lower side wall of the positioning ring, the baffle moves downward to below the leakage hole, the crystal seeds in the storage cylinder fall into the solution evenly under the action of gravity through the opened leakage hole, so that the uniform scattering of the crystal seeds in the solution is realized, and the crystallization efficiency and product quality are improved.

This invention discloses a method for fabricating a porous GaN-based N-doped gallium β-oxide solar-blind detector, comprising the following steps: Step 1, growing an n-GaN thin film on a first substrate, and electrochemically etching the n-GaN thin film in an electrolyte to prepare nanoporous GaN; Step 2, using the nanoporous GaN as a second substrate, growing an N-doped gallium β-oxide thin film to prepare a nanoporous GaN-based N-doped gallium β-oxide thin film, and annealing it in an atmosphere; Step 3, depositing alloy electrodes on the nanoporous GaN-based N-doped gallium β-oxide thin film to prepare a porous GaN-based N-doped gallium β-oxide solar-blind photodetector. This invention also discloses a porous GaN-based N-doped gallium β-oxide solar-blind detector. This invention solves the key common problems in the prior art, such as high stress in gallium β-oxide thin films, poor crystal quality, and large dark current and slow photoresponse speed in gallium β-oxide solar-blind detectors.

This invention discloses a method for fabricating an LED epitaxial structure, wherein a stress relief layer is grown on an N-type semiconductor layer; the stress relief layer comprises an InGaN layer, a GaN layer, and an Al layer grown sequentially according to a first preset cycle. Y Ga1 Y N layer and B X Ga1 X N layers; growing Al Y Ga1 Y In the N-layer stage, the reaction chamber temperature is set to 700-900℃, the reaction chamber pressure to 100-500 mbar, and 25-1000 sccm of TMAl and 25-1000 sccm of TEGa are introduced into the reaction chamber to form Al. Y Ga1 Y N layers; during the growth of B X Ga1 X In the N-layer stage, the reaction chamber temperature is set to 700-950℃, the reaction chamber pressure to 100-500 mbar, and 25-1000 sccm of TEB and 25-1000 sccm of TEGa are introduced into the reaction chamber to form B. X Ga1 X N layers. This invention can improve the crystal quality of the subsequent multi-quantum-well active region, enabling the LED epitaxial structure to have better luminous efficiency and device reliability.

This invention proposes an ABX3 seed-induced crystallization perovskite thin film and a method for preparing the same for photovoltaic cells. The ABX3 seed-induced crystallization perovskite thin film contains potassium stannate. This ABX3 seed-induced crystallization perovskite thin film exhibits high crystallinity and good stability.

The application discloses a growth method of a high-carrier-concentration heavily doped gallium oxide epitaxial film, and mainly solves the problems of high cost, high defect density and low carrier concentration of a currently used heavily doped epitaxial film substrate. The implementation scheme is as follows: a sapphire substrate is selected and cleaned; the cleaned substrate is put into a reaction cavity of a MOCVD (Metal Organic Chemical Vapor Deposition) for pretreatment; two layers of buffer layers with different mechanisms are sequentially grown on the substrate by changing the temperature, pressure and ratio of reaction sources of the reaction chamber; a Ge heavily doped beta-Ga2O3 film with an epitaxial concentration of 10 19 cm ‑3 -10 20 cm ‑3 is epitaxially prepared on the second buffer layer by using a pulse MOCVD method with GeH4 as a dopant and a catalyst, and the epitaxial film is annealed, so that the preparation of the epitaxial film is completed. The defect density of the epitaxial film and the substrate use cost are reduced, and the carrier concentration is improved, so that the epitaxial film can be used for the preparation of power devices and switching devices.

This invention discloses an automatically target-changing pulsed laser deposition apparatus and method. The apparatus includes a process chamber, a transfer valve, and a buffer chamber. The process chamber is connected to the buffer chamber via the transfer valve and is configured as an internal vacuum chamber. The buffer chamber has a door at its upper part and operates as a vacuum chamber. A sample stage is located on the upper inner side of the process chamber. Two neck tubes are located on the two sides of the process chamber for guiding an external laser source and mounting a laser detection device, respectively. The process chamber also includes a rotatable target stage for loading and unloading targets from the buffer chamber. The buffer chamber includes a rotating target stage mechanism and a vision camera for placing the target material and recording the bottom features of the target material, respectively. This invention provides an automatically target-changing pulsed laser deposition apparatus and method with a compact structure, precise positioning, and automatic target changing capabilities, enabling fully automated deposition of ultrapure thin films.

The application discloses a light-emitting thin film structure on a non-single crystal substrate, and belongs to the technical field of light-emitting semiconductor thin films and light-emitting devices.The structure comprises, from bottom to top, a non-single crystal substrate, a superlattice structure composed of n periodic alternately stacked two-dimensional material interface layers and III group nitride buffer layers, which are used for gradually reducing crystal defects and releasing stress, and an N type layer, a light-emitting layer, a P type layer and a P+ type layer which are stacked on the superlattice structure.By adopting the periodic combination of the two-dimensional material interface layers and the nitride buffer layers, a periodic superlattice structure of an "interface layer-buffer layer" is provided in the application, wherein the number of periods n is greater than or equal to 2.By optimizing material selection and stacking mode, the structure can significantly reduce the lattice defects of the outermost buffer layer, and when depositing the thin film used for the PN junction of a light-emitting diode, the lattice defects in the thin film can be greatly reduced, and the crystalline quality can be effectively improved.

This invention discloses a thin-film solar cell with synergistic passivation and field-effect modulation functions, and its fabrication method, belonging to the field of solar cell technology. The core of this invention lies in introducing an ultrathin barium titanate (BaTiO3) interlayer between the back electrode and the CZTSSe absorber layer. This interlayer not only passively blocks electron backflow and suppresses interfacial recombination by utilizing its large conduction band offset with CZTSSe, but more importantly, it can induce BaTiO3 absorption during high-temperature selenization. 2+ Cu in CZTSSe + Non-equivalent cation migration and exchange occur, thereby actively constructing a directionally favorable cation migration and exchange-induced built-in electric field (CME-field) within the quasi-neutral region of the absorber layer, synergistically promoting the collection of photogenerated holes. This invention achieves a synergistic effect of "passive blocking" and "active driving," significantly improving battery performance and increasing the photoelectric conversion efficiency of battery devices to 14.00%.

The application discloses a method for preparing high-quality two-dimensional nickel selenium nanometer islands by using a molecular beam epitaxy growth technology, the high-quality two-dimensional nickel selenium nanometer islands and applications, and belongs to the technical field of semiconductor materials. Under an ultrahigh vacuum condition, a strontium titanate substrate is pretreated, so that the surface morphology of the pretreated substrate is regular steps; nickel and selenium sources are used as evaporation sources, and a molecular beam epitaxy growth technology is used to grow nickel selenium nanometer islands on the pretreated substrate, the two-dimensional nickel selenium nanometer islands prepared by the application are uniformly distributed in size and are covered on the surface of the substrate, the height of the two-dimensional nickel selenium nanometer islands is 10Å~20Å, the lateral size range is 10nm~80nm, and the two-dimensional nickel selenium nanometer islands have excellent semiconductor band gap adjustable characteristics. The preparation method has a significant advantage in atom-level precise regulation of the size and coverage of semiconductor nanometer islands, fills a blank of the preparation of nickel selenium nanometer islands by using the molecular beam epitaxy technology, and provides an excellent material basis for the research and development of a new generation of high-performance semiconductor devices.

The application discloses a kind of phthalocyanine copper / inverted pyramid perovskite heterojunction photodetector and preparation method, comprising the following steps: 1) etching out the silicon piece with pyramid surface microstructure, as the base of growing perovskite single crystal;2) preparation perovskite solution, utilize silicon piece and glass piece as the frame of growth area restriction, utilize seed growth method, space limited method and inverse temperature crystallization method combined growth method preparation surface pyramid perovskite single crystal;3) utilize thermal evaporation in perovskite single crystal surface evaporation phthalocyanine copper film formation heterojunction, then utilize conductive carbon paste as upper and lower electrode preparation photodetector.The photodetector prepared by the application is stable at normal temperature and pressure, and has better photoelectric response relative to the control group device in a high humidity environment, and the device has good long-time humidity stability, which has guiding significance for the future high-performance photodetection field in high humidity environment such as sea, ship and island.

The application provides an epsilon phase gallium oxide based material and a crystal student growth method and use thereof, the crystal student growth method comprising epitaxial growth of the epsilon phase gallium oxide based material on a substrate with a polar surface, so that the epsilon phase gallium oxide based material has the same polarization direction as the polar surface. The application selects a substrate with a specific surface polarity and controls the growth of high-quality crystals through substrate and template engineering, thereby guiding controllable polarity growth by using the specific substrate as a template. Thus, active regulation of the polarization direction of the epsilon phase gallium oxide based material can be supported, the bottleneck of single polarization characteristics of the material system is broken, a key material foundation for developing a new generation of high-performance functional devices based on polarization engineering is laid, and the application has important scientific and application values.

The application discloses a single-chip vapor deposition device and system, which comprises a base, an at least partially liftable baffle arranged around the base and surrounding a process chamber during a film forming process, a process gas inlet mechanism arranged on one side of the process chamber for supplying process gas, an exhaust port arranged in the process chamber, the exhaust port and the process gas inlet mechanism being arranged on opposite sides of the single-chip vapor deposition device, a wafer transfer port arranged on a side of the single-chip vapor deposition device different from the side where the process gas inlet mechanism and the exhaust port are arranged, and the baffle being provided with a first opening only on a side close to the process gas inlet mechanism, process gas flowing into the process chamber through the first opening, flowing horizontally on the surface of a substrate and epitaxially forming a film, and at least part of process gas not participating in a reaction and reaction byproducts being discharged from the exhaust port. The application can reduce the long velocity difference of process gas at the front and back of a substrate, so as to improve the crystal quality and film thickness uniformity of an epitaxial layer.

The utility model provides a kind of temperature-controllable vacuum drying equipment, including including process cavity and vacuum system;The process cavity is provided with the support platform for placing the product to be dried in;The vacuum system is communicated with the process cavity, for extracting vacuum to the process cavity;Heating element is provided in the cavity wall of the process cavity, and the heating element is used to adjust the inner wall temperature of the process cavity.The present application is heated in real time to the inner wall of process cavity, to promote the solvent volatilization adsorbed on the inner wall, to avoid the influence on subsequent drying crystallization process.

The application provides a light-emitting epitaxial structure, a light-emitting diode chip and a display device, and relates to the technical field of semiconductor light-emitting devices. The light-emitting epitaxial structure comprises a substrate, an N-type confinement layer, an active layer, a P-type confinement layer and a P-type GaP window layer which are sequentially arranged in sequence; a layer of AlGaP improvement layer is inserted in the P-type GaP window layer; or at least two layers of AlGaP improvement layer are inserted in the P-type GaP window layer, and the at least two layers of AlGaP improvement layer are arranged at intervals in the direction from the substrate to the P-type GaP window layer. The insertion of the at least one layer of AlGaP improvement layer in the P-type GaP window layer can reduce the stress of the P-type GaP window layer caused by lattice mismatch, reduce the dislocation density in the P-type GaP window layer, improve the crystal quality of the P-type GaP window layer, improve the growth quality of the light-emitting epitaxial structure, and improve the performance of the light-emitting diode chip.