441results about How to "Improve crystal quality" patented technology

The invention discloses a graphene composite perovskite manganese oxide polycrystalline ceramic and a preparation method and application thereof, and belongs to the technical field of non-refrigeration high-sensitivity infrared detection. The chemical expression of the graphene composite perovskite manganese oxide polycrystalline ceramic is La < 0.81 > (Ca < 0.03 > Sr < 0.16 >) MnO3: Gy, G is graphene, y is the mass fraction of graphene in perovskite manganese oxide composite powder, and y is equal to 0.1-0.2%. The TCR value of the prepared polycrystalline ceramic can reach 30% or above, the Tk value is close to 300K, the polycrystalline ceramic has excellent adaptability to room temperature work and excellent sensitivity to temperature change, and when the polycrystalline ceramic is applied to an uncooled infrared detector, the detection precision of the uncooled infrared detector can be effectively improved.

The invention provides an AlGaN film growth method and an AlGaN film, relates to the technical field of semiconductor material epitaxy, and aims to solve the technical problem of high defect density of an AlGaN film grown based on a silicon carbide substrate in the prior art. The method comprises the following steps: preparing a substrate, and cleaning the substrate; putting the cleaned substrate into high-temperature MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and introducing a metal organic source for appointed time, so that metal atoms are adsorbed on the growth surface of the substrate; carrying out metal atom desorption treatment on the substrate adsorbed with the metal atoms for a specified time to obtain a target substrate; and growing an AlGaN film on the growth surface of the target substrate. According to the method, the step density of the surface of the substrate is reduced through metal atom adsorption and desorption processes, and an oxide layer on the surface is effectively removed, so that the crystal quality and the surface smoothness of the AlGaN film are improved.

The invention provides a gallium nitride thin film and a graphene van der Waals epitaxial gallium nitride thin film growth method. The method comprises the following steps: step 102, manufacturing a first AlN buffer layer on a substrate; step 103, transferring a two-dimensional material layer on the first AlN buffer layer; step 104, manufacturing a second AlN buffer layer on the two-dimensional material layer; and step 105, forming a GaN material thin film on the second AlN buffer layer. The invention also provides the gallium nitride film prepared by the method. The gallium nitride thin film is high in crystal quality, can be peeled off and is suitable for preparing a high-efficiency light-emitting diode.

The invention relates to an erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal as well as a preparation method and application thereof, and belongs to the field of nonlinear optical crystals. The erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal provided by the invention is prepared from Li2CO3, Nb2O5 and Er2O3 and / or Yb2O3 with the purity of 99.99%; wherein the atomic molar ratio of Li to Nb is 0.80-0.92, and the doping molar fraction of Er2O3, the doping molar fraction of Yb2O3 and the total doping molar fraction of Er2O3 and Yb2O3 are respectively 0.75%-1.25%. The erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal prepared by the invention is high in crystallization quality, large in doping concentration, uniform and transparent as a whole and free from obvious macroscopic defects, and can be used for preparing a high-quality lithium niobate bulk material and a submicron lithium niobate film so as to further prepare high-efficiency photoelectric functional devices such as a laser, an amplifier and a detector; and a foundation is laid for development of the fields of integrated photonics and the like.

The invention discloses a silicon substrate gallium nitride wafer containing a large mismatch stress regulation and control structure and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The silicon substrate gallium nitride wafer containing the large mismatch stress regulation and control structure is formed by stacking a silicon substrate, an aluminum nitride amorphous film barrier layer, an ultrathin porous aluminum oxide weak bonding decoupling layer, an aluminum nitride single crystal film nucleating layer template layer and a gallium nitride single crystal film quality improvement layer in sequence. According to the invention, by regulating and controlling the pore size and pore density in the ultrathin porous alumina weak bonding and decoupling layer, the weak bonding and decoupling effect of the aluminum nitride single crystal film nucleating layer template layer on the ultrathin porous alumina weak bonding and decoupling layer is regulated and controlled; and therefore, large mismatch stress regulation and control of the silicon substrate gallium nitride material are realized, and the crack-free thickness, the material crystallization quality and the material preparation efficiency are improved. The silicon substrate gallium nitride wafer containing the large mismatch stress regulation and control structure can be applied to development and production of gallium nitride-based power electronic devices, microwave radio frequency devices and optoelectronic devices.

The invention relates to the technical field of semiconductor devices, in particular to an epitaxial structure of an LED quantum well and a growth method of the epitaxial structure. Comprising an active layer, the active layer is formed by periodically stacking a plurality of unit structures, each unit structure comprises a quantum well layer, a cover layer and a quantum barrier layer which grow in sequence, and the quantum well layer comprises a superlattice structure formed by an indium gallium nitride layer and a processing layer which grow alternately. The growth time of indium gallium nitrogen is short, the thickness of a single layer is 5%-15% of the thickness of traditional indium gallium nitrogen, the pressure stress borne by indium gallium nitrogen is greatly reduced, and the crystal quality of the quantum well is improved. Moreover, after the indium gallium nitrogen grows for a short time, the ammonia gas and indium are kept for treatment, so that the nitrogen vacancy defect can be reduced, the decomposition of indium in the indium gallium nitrogen can be reduced, and the defects in a quantum well are reduced. According to the invention, the crystal quality of the quantum well is obviously improved, and the luminous efficiency of an LED under low current density is obviously improved.

The invention relates to the technical field of photoelectric materials, in particular to a rare earth doped perovskite quantum dot and a preparation method thereof. The preparation method of the rare earth doped perovskite quantum dots comprises the following steps: mixing and dissolving a lead source, a rare earth source and a solvent to obtain a mixed solution; wherein the lead source and the rare earth source do not contain halogen; reacting the mixed solution with excessive halogenated aliphatic amine precursors to obtain a reaction intermediate solution; the reaction intermediate solution reacts with a fatty acid cesium precursor, and the rare earth doped perovskite quantum dots are obtained after cooling. The preparation method of the rare earth doped perovskite quantum dots is good in controllability, low in requirements for reaction conditions and equipment and high in repetition rate, and the prepared rare earth doped perovskite quantum dots are good in luminescence performance and stability.

The invention belongs to the field of semiconductor processing and manufacturing, and provides a temporary bonding and de-bonding method, a composite substrate preparation method and a wafer manufacturing method.The temporary bonding and de-bonding method comprises the steps that silicon oxide layers are formed on two silicon substrates; the silicon oxide layer is subjected to ion implantation, hydrofluoric acid treatment and plasma activation, temporary bonding of the two silicon substrates is realized through hydrophilic bonding, and a temporary bonding interface is cracked through de-bonding annealing, so that de-bonding is realized. According to the method, a bonding medium does not need to be used, the thermal properties of the two substrates can be kept consistent, and warping and breaking are effectively avoided; temporary bonding is high in strength and good in stability, the functional substrate can be greatly thinned through the method, and therefore the composite substrate is prepared or the method is further used for manufacturing a multi-layer wafer bonding structure.

The invention relates to the technical field of desulfurization wastewater treatment, in particular to a desulfurization wastewater treatment system which comprises a gypsum cyclone used for performing solid-liquid separation treatment on desulfurization wastewater from a gypsum slurry buffer tank and then conveying upper cyclone overflow into a gypsum overflow slurry tank; the gypsum overflow slurry tank is used for conveying the rotational flow overflow into the accident slurry tank when the chloride ion concentration value in the rotational flow overflow is greater than the set concentration threshold value of the absorption tower; the accident slurry tank is used for carrying out precipitation treatment on rotational flow overflow from the gypsum overflow slurry tank and then conveying clear liquid at the upper part of the accident slurry tank into the wastewater concentration tower; and the wastewater concentration tower is used for performing concentration reduction treatment on the clear liquid from the accident slurry box, and conveying the concentrated slurry to the drying system for drying treatment when the chloride ion concentration value of the slurry in the wastewater concentration tower reaches a concentration threshold value required by the drying system. By applying the system, the desulfurization wastewater treatment efficiency can be effectively improved.

The invention belongs to the technical field of solar cells, and particularly relates to a wide-band-gap perovskite solar cell with high open-circuit voltage and a method of the wide-band-gap perovskite solar cell. Derivative molecules of ethylenediamine and phenylethylamine and corresponding halide salt materials thereof are introduced below a perovskite light absorption layer of the wide-band-gap perovskite solar cell to serve as a buried interface modification layer, so that the performance of the cell is remarkably improved. Derivative molecules of ethanediamine and phenylethylamine and corresponding halide salt materials thereof can provide free electron pairs, and form a stable coordination structure with uncoordinated Pb < 2 + > ions in perovskite, thereby realizing regulation and control of perovskite crystallization kinetics. According to the invention, the crystallization quality of the wide-band-gap perovskite thin film is improved, and the method has the potential of promoting rapid development of an efficient three-junction laminated cell technology.

The invention relates to a method for optimizing the quality of a perovskite layer through atmosphere annealing, and belongs to the technical field of perovskite layer quality optimization, and the method comprises the steps: preparing precursor materials: taking methylamine hydrochloride, cesium iodide, formamidine iodide and lead iodide as perovskite precursor materials; the preparation method comprises the following steps: preparing a solvent: mixing N-methyl pyrrolidone with dimethylformamide; solution preparation: mixing the precursor material with a solvent to prepare a precursor solution; stirring and filtering the solution; preparing a substrate: sputtering NiO serving as a hole transport layer material on the glass substrate; blade coating of a perovskite precursor solution: uniformly blade coating the precursor solution on the glass substrate coated with the NiO film; preliminary drying; vacuum annealing preparation: placing the glass substrate coated with the perovskite precursor film in a vacuum cavity; nitrogen atmosphere filling: filling high-purity nitrogen; in the nitrogen atmosphere, the temperature in the cavity is increased to a certain temperature range, annealing is conducted at the temperature, and the optimized annealing temperature and time are selected; and cooling and packaging.

The utility model relates to the technical field of nicosulfuron preparation, and discloses a nicosulfuron recrystallization stirring device, which comprises a reaction kettle and a servo motor fixedly arranged at the top of the reaction kettle, the output end of the servo motor is fixedly connected with a rotating shaft, the outer surface of the rotating shaft is fixedly connected with piston cylinders at equal intervals, and the piston cylinders are fixedly connected with the reaction kettle. And a piston rod is slidably connected into the piston barrel in a sealed mode, a stirring plate is fixedly connected to the end face of the piston rod, and a driving assembly is installed in the rotating shaft. Through the arrangement of the driving assembly, when the servo motor drives the rotating shaft to rotate in the reaction kettle, the stirring plate axially rotates in the reaction kettle, the stirring plate transversely slides in the reaction kettle in a reciprocating manner, and the stirring radius is changed at any time, so that a local retention area in a solution can be broken, and dead angles are reduced; the mixing uniformity is further enhanced, so that nicosulfuron crystals can be uniformly distributed in the solution, the crystals are prevented from gathering or caking, and the crystallization quality is improved.

The invention discloses a silicon substrate gallium nitride semiconductor wafer and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The silicon substrate gallium nitride semiconductor wafer is composed of a silicon single crystal substrate, a silicon carbide single crystal thin film barrier layer, an ultrathin porous titanium nitride weak bonding decoupling layer, an aluminum nitride single crystal thin film nucleating layer template layer and a gallium nitride single crystal thin film quality improving layer which are stacked in sequence. According to the invention, the pore size and the pore density in the ultrathin porous titanium nitride weak bonding decoupling layer are regulated and controlled, so that the weak bonding decoupling effect of the aluminum nitride single crystal film nucleating layer template layer on the ultrathin porous titanium nitride weak bonding decoupling layer is regulated and controlled; therefore, large mismatch stress regulation and control and crack-free thickness improvement of the silicon substrate gallium nitride material are realized, and material crystallization quality and preparation efficiency are improved. The silicon substrate gallium nitride semiconductor wafer can be applied to development and production of gallium nitride-based power electronic devices, microwave radio frequency devices and optoelectronic devices.

The invention discloses a wide-band-gap perovskite solar cell and a preparation method thereof, and belongs to the technical field of new energy, the method comprises the following steps: 1) spin-coating a NiOx solution on a pretreated substrate, and drying to obtain a NiOx hole transport layer; 2) mixing FAI, CsI, PbBr2 and PbI2, dissolving the mixture in a mixed solution of DMF and DMSO, and then adding 4, 5-dicyanoimidazole to obtain a perovskite precursor solution; the NiOx hole transport layer obtained in the step 1) is coated with a perovskite precursor solution through a two-step spin-coating method, and a perovskite layer is obtained after annealing treatment; and 3) successively preparing an electron transport layer and an electrode layer to obtain the wide-band-gap perovskite solar cell. By providing a 4, 5-dicyanoimidazole additive strategy, the strong coordination effect between 4, 5-dicyanoimidazole and iodide ions effectively inhibits the precipitation of iodine, thereby significantly improving the stability of the wide-band-gap solar cell.

The invention belongs to the technical field of heterojunction bipolar transistors, and particularly relates to a heterojunction bipolar transistor and an MOCVD epitaxial growth method thereof. The heterojunction bipolar transistor provided by the invention comprises a transition layer arranged between a base region and an emission layer, and the MOCVD epitaxial growth method comprises the step of growing the transition layer on the surface of the base region by adopting a linear variable-temperature staged pulse metal organic chemical vapor deposition method, pH3 is continuously introduced within the total growth time of the linear variable-temperature staged pulse metal organic chemical vapor deposition method, and trimethyl indium, trimethyl gallium and silane are introduced in a single-cycle staged pulse manner; and the temperature of the reaction chamber is linearly increased from the base region growth temperature to the emission layer growth temperature within the time from the T1 initial moment to the TN initial moment. The heterojunction bipolar transistor obtained by the method provided by the invention is large in gain, low in sheet resistance and good in reliability.

The invention relates to the technical field of photoelectricity, and discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and an LED chip, the light-emitting diode epitaxial wafer comprises a substrate, and the substrate is sequentially provided with a buffer layer, a non-doped GaN layer, an N-type GaN layer, a combination layer and a P-type GaN layer; the combined layer comprises an electron consumption layer and a wave band layer which are stacked in sequence, the electron consumption layer comprises Mg-doped AlGaN layers and BN layers which are stacked alternately, the wave band layer comprises a medium wave layer, a short wave layer and a long wave layer which are stacked in sequence, the medium wave layer comprises Ga plane polarization GaN quantum barrier layers and first InGaN quantum well layers which are stacked alternately, and the first InGaN quantum well layers are stacked alternately. The short-wave layer comprises N-plane polarized GaN quantum barrier layers and second InGaN quantum well layers which are alternately stacked, and the long-wave layer comprises Ga-plane polarized AlGaN quantum barrier layers and third InGaN quantum well layers which are alternately stacked. The light-emitting diode epitaxial wafer provided by the invention can reduce electron overflow and weaken QCSE in the multi-quantum well layer.

The invention provides a preparation method of a tantalum carbide coating graphite component, and relates to the technical field of semiconductor growth. The surface of the graphite substrate is pre-coated with a titanium carbide coating through a low-temperature process method, and a buffer transition layer is obtained; the surface of the transition layer is coated with a titanium carbide coating through a variable-temperature process method, and temperature conversion is conducted; according to the variable-temperature process method, only one-time variable-temperature growth or multiple-cycle growth is carried out, a buffer layer with low crystal quality is pre-coated on the surface of a graphite substrate so as to reduce stress and thermal adaptation between the graphite substrate and a surface coating, and then a main coating tantalum carbide film is produced on the buffer layer through a variable-temperature process, so that the surface of the graphite substrate is coated with the tantalum carbide film. And a variable-temperature process is used for reducing the stress in the coating production process.

The invention belongs to the technical field of perovskite solar cells, and particularly relates to a method for regulating and controlling lead iodide distribution in the whole process of perovskite nucleation crystallization and a method for preparing a perovskite solar cell. TBA (tert-butyl formamidine hydrochloride) is added in the whole nucleation and crystallization process of the perovskite layer to regulate and control the distribution of lead iodide. Through the whole process of lead iodide management, the improvement of the perovskite crystal quality, the management of the crystal boundary and the regulation and control of the residual lead iodide are realized, and finally the improvement of the efficiency and the stability of the device is realized.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductor devices. The light-emitting diode epitaxial wafer comprises a silicon substrate, and a buffer layer, a non-doped AlGaN layer, an N-type AlGaN layer, a multi-quantum well layer, an electron barrier layer, a P-type AlGaN layer and a P-type contact layer which are sequentially stacked on the silicon substrate, the buffer layer comprises an oxide layer and a barrier layer which are sequentially stacked on the silicon substrate; the oxide layer comprises a three-dimensional Si gradient doped Ta2O5 layer, a three-dimensional Si gradient doped Ga2O3 layer and a two-dimensional (AlGa) 2O3 layer which are stacked in sequence; the barrier layer comprises a three-dimensional Mg-H doped BAN layer and a two-dimensional Si3N4 layer which are stacked in sequence. According to the light-emitting diode epitaxial wafer, electric leakage channels can be reduced, the crystal quality is improved, the photoelectric property of an LED device is improved, and the problem of high leakage current of a silicon substrate GaN-based LED is solved.

The invention belongs to the field of preparation of hexagonal boron nitride materials, and discloses a preparation method of a multilayer hexagonal boron nitride single crystal film, which comprises the following steps: (1) preparing an asymmetric substrate, introducing a solid film of a boron source material on the substrate, and carrying out low-pressure nitridation reaction and subsequent high-temperature annealing to obtain a boron nitride single crystal film; therefore, a plurality of discrete and directionally distributed hexagonal boron nitride single-crystal crystal domain films are formed on the substrate; and (2) carrying out MOCVD epitaxial growth on the substrate on which the plurality of discrete and directionally distributed hexagonal boron nitride single-crystal domain films are formed, so as to continuously grow by taking the hexagonal boron nitride single-crystal domain films as nucleation points to obtain a continuous and multilayer hexagonal boron nitride single-crystal film. The whole process of the preparation method is improved, a two-step method is utilized, and the growth of the hexagonal boron nitride single crystal multilayer film is completed by adopting two boron sources.

The invention discloses a method for preparing a perovskite single crystal by using a general solvent system, and relates to the field of photoelectric materials. The general solvent system is composed of gamma-butyrolactone and polyethylene glycol and can be used for preparing perovskite single crystals with various components. The method for preparing the perovskite single crystal by using the solvent system comprises the following steps: preparing a perovskite precursor solution; heating the perovskite precursor solution; and taking out the single crystal from the solution, cleaning and drying. The method is simple and convenient to operate, and can be used for preparing large-size single crystals and preparing small-size single crystals on a large scale.

The invention discloses a preparation method of a high-quality beta-Ga2O3 film based on Van der Waals epitaxial growth. The preparation method of the high-quality beta-Ga2O3 thin film comprises the following steps: S1, placing a fluorine crystal mica F-micro substrate in MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and growing a gallium oxide low-temperature nucleating layer on the substrate at a first temperature by taking triethyl gallium as a gallium source and O2 as an oxygen source; s2, taking triethyl gallium as a gallium source and O2 as an oxygen source, and growing a gallium oxide high-temperature epitaxial layer on the gallium oxide low-temperature nucleating layer at a second temperature to obtain the high-quality beta-Ga2O3 thin film, the second temperature is higher than the first temperature. According to the beta-Ga2O3 thin film prepared by the method, the crystal quality is equivalent to that of a thin film obtained by a traditional rigid sapphire substrate, the problem that a high-quality gallium oxide thin film is difficult to prepare by an organic flexible substrate is solved, and the beta-Ga2O3 thin film is separated from the substrate and can be transferred to any target substrate; and the solar-blind ultraviolet photoelectric detector with high performance, flexibility and a vertical structure can be constructed.

The invention relates to the technical field of nano materials, and discloses a preparation method of a horizontal guiding CsPbBr3 nanowire array. The preparation method comprises the following steps: S1, blade-coating a mixture containing polydimethylsiloxane on a channel array template, heating, curing and stripping to obtain a polydimethylsiloxane film with a channel array; s2, cleaning a substrate and performing hydrophobic modification to obtain a hydrophobic substrate; s3, a CsPbBr3 solution is taken, a surfactant is added, and a mixed solution is obtained; and S4, dropwise adding the mixed solution to the surface of a hydrophobic substrate, covering a polydimethylsiloxane film with a channel array, compacting, heating, and stripping to obtain the horizontal guiding CsPbBr3 nanowire array. The preparation method of the horizontally oriented CsPbBr3 nanowire array provided by the invention is simple in steps, short in time consumption and high in efficiency, and the obtained CsPbBr3 nanowire array is tidy in horizontal arrangement, good in continuity and high in crystallization quality.

The invention discloses a preparation method of a Sn-doped beta-Ga2O3 film capable of improving mobility and carrier concentration, and mainly solves the problems that an existing beta-Ga2O3 epitaxial film is poor in crystallization quality and cannot have high mobility and high carrier concentration at the same time. According to the implementation scheme, a substrate is selected and cleaned; putting the cleaned substrate into a reaction cavity of MOCVD (Metal Organic Chemical Vapor Deposition) for annealing treatment; n2 is used as carrier gas of a Ga source and a Sn source, intermittent introduction of N2 and O2 is carried out at different stages in a gas path introduction period, intermittent O atoms, Ga atoms and Sn atoms are provided for a reaction chamber, the Sn-doped beta-Ga2O3 thin film is formed through the combined action of the three atoms on the surface of the substrate subjected to high-temperature annealing, and then the Sn-doped beta-Ga2O3 thin film is cooled to complete preparation of the beta-Ga2O3 thin film. The defect density of the epitaxial film is remarkably reduced, the electrical property of the film is effectively improved, and the epitaxial film can be used for manufacturing high-power and high-frequency electronic devices.

The invention discloses a method for preparing single crystal diamond based on a carbon dioxide / methane mixed gas carbon source, which adopts a microwave plasma chemical vapor deposition method and takes CH4 / CO2 mixed gas as the carbon source to prepare the high-quality single crystal diamond, and obviously improves the growth rate of the single crystal diamond. The method solves the problems that the existing carbon dioxide methanation conversion rate is not high, and the carbon dioxide / methane mixed gas output after conversion cannot be directly converted into the high-value single crystal diamond, and the method has important significance for converting the carbon dioxide into the diamond.

The invention belongs to the field of solar cells, and particularly relates to a flexible tin-lead perovskite solar cell and a preparation method thereof.A passivation solution is introduced between a tin-lead perovskite light absorption layer and an electron transport layer for passivation treatment, and due to the fact that the passivation solution contains C = O groups or-NH2, the flexible tin-lead perovskite solar cell can be applied to the field of solar cells. The coordination with Sn < 2 + > and Pb < 2 + > in the perovskite light absorption layer can be simultaneously generated, and the defects existing at the perovskite interface can be obviously passivated. Therefore, the tin-lead perovskite solar cell can play a role in inhibiting oxidation of the perovskite layer, and meanwhile, the non-radiative recombination condition of current carriers is reduced, so that the performance of the tin-lead perovskite solar cell is greatly improved.

The invention relates to the field of semiconductor material molecular beam epitaxial growth manufacturing, and discloses a method for controlling As background pressure to reduce InAs / GaSb surface defects, which comprises the following steps: S1, substrate preparation and pretreatment: selecting a proper GaSb single crystal substrate, and carrying out selection, cleaning, degassing and deoxidation treatment on the GaSb substrate; s2, carrying out epitaxial growth of a GaSb buffer layer, and carrying out epitaxial growth of the GaSb buffer layer on the processed GaSb substrate; s3, control of As background pressure intensity: in the growth process of the GaSb buffer layer, the As background pressure intensity in the cavity is controlled and stabilized by adjusting the opening degree of an As needle valve; s4, growth of an InAs / GaSb superlattice: growing an InAs and GaSb superlattice structure layer by layer under the condition of well controlled As background pressure intensity. By accurately controlling the As background pressure intensity, the'bright spot 'defect and other surface defects formed on the InAs / GaSb surface can be effectively reduced, and the surface quality of the superlattice material is improved.

The invention discloses a method for monitoring the thickness of an epitaxial layer, which comprises the following steps of: introducing a germanium-silicon injection layer before the preparation of the epitaxial layer, irradiating a laser beam to the surface of the epitaxial layer by utilizing the optical characteristic of the silicon-germanium injection layer and the characteristic that the epitaxial layer is different, and measuring the characteristic information reflected by the laser beam, so that the preparation thickness of the epitaxial layer can be monitored in real time.

The present invention belongs to the technical field of two-dimensional material preparation, and relates to a preparation method and application of a two-dimensional molybdenum disulfide material. Using molybdenum source and sulfur powder as raw materials, and inert gas as carrier gas, the raw materials are transported to the molten glass surface through an intermediate evaporation process to be deposited as solid molybdenum sulfide, and in the subsequent etching-spreading-sulfurization-precipitation process, an ultra-high-quality and ultra-large-area molybdenum disulfide single crystal domain grown at normal pressure and without hydrogenation is obtained. The single crystal domain size of the prepared two-dimensional molybdenum disulfide material can reach 1.5 cm, and then grow into a wafer-level two-dimensional molybdenum disulfide material with a size of 2 inches, and the thickness can be 1-2 layers.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: firstly, providing an initial wafer; processing the initial wafer by adopting a laser process to obtain a substrate layer of which the first surface is provided with a plurality of groove regions and non-groove regions; a first tunneling dielectric layer is formed on the first surface, and the thickness of the first tunneling dielectric layer located in the groove area is larger than that of the first tunneling dielectric layer located in the non-groove area; then, an amorphous silicon layer is formed on the side, away from the substrate layer, of the first tunneling dielectric layer, and the thickness of the amorphous silicon layer located in the groove area is larger than that of the amorphous silicon layer located in the non-groove area; carrying out doping treatment on the amorphous silicon layer to obtain a doped layer; and finally, forming a first electrode on a part of the surface of the groove region. The preparation method of the solar cell can improve the performance of the solar cell.