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Method for preparing nano-scale pattern substrate for nitride epitaxial growth

The invention relates to the semiconductor technical field and discloses a method for manufacturing a nanometer pattern substrate used for the epitaxial growth of a nitride. The method comprises the followings steps: settling a layer of silicon dioxide or silicon nitride film on a substrate used for the epitaxial growth of the nitride; the silicon dioxide or silicon nitride film is coated with a layer of thin metal layer through vapor deposition; conducting the annealing heat treatment, and forming uniformly distributed nano-scaled metal particles; utilizing the formed nano-scaled metal particles as masks to etch the silicon dioxide or silicon nitride film so as to form a nanometer pattern structure; using the silicon dioxide or silicon nitride film with the nanometer pattern structure as a mask etching substrate to transfer the nanometer pattern structure of the substrate; and etching to remove the silicon dioxide or silicon nitride film, cleaning the substrate, and obtaining the nanometer pattern substrate. The invention can reduce the dislocation density in the epitaxial layer of the nitride, improve the crystal quality of epitaxial materials, improve the performance of devices and help to realize the scaled and large area manufacture.
Owner:UNILUMIN GRP
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