A
semiconductor light emitting element, manufacturing method thereof, integrated
semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a
sapphire substrate, and a growth
mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth
mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined
crystal planes each composed of a plurality of
crystal planes inclined from the major surface of the
sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an
active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side
electrode and an n-side
electrode are formed.