337 results about "Surface diffusion" patented technology

A nonwoven sheet for use in absorbent articles such as disposable diapers which is capable of reducing the range of surface diffusion of, and reducing re-adhesion to the skin of, highly viscous fluid excretion. The nonwoven sheet has mutually perpendicular longitudinal, transverse and thickness directions, and has in the aforementioned thickness direction a front surface and a back surface opposite thereof. Ridges and grooves are formed alternately so as to extend in parallel in the aforementioned longitudinal direction and so as to form repeated undulations in the aforementioned transverse direction. The nonwoven sheet has a bottom surface which, when the aforementioned nonwoven sheet is placed on a horizontal surface with the back surface (opposite of the front surface in contact with the skin of the wearer) down, is the surface that contacts the aforementioned horizontal surface. On the back surface of the aforementioned grooves are formed in the aforementioned longitudinal direction alternately areas where the height from the bottom surface is relatively high and parts corresponding to the bottom surface. Openings are formed at least in the areas where the height from the bottom surface is relatively high, and a space is provided below said openings.

A nonwoven sheet for use in absorbent articles such as disposable diapers which is capable of reducing the range of surface diffusion of, and reducing re-adhesion to the skin of, highly viscous fluid excretion. The nonwoven sheet has mutually perpendicular longitudinal, transverse and thickness directions, and has in the aforementioned thickness direction a front surface and a back surface opposite thereof. Ridges and grooves are formed alternately so as to extend in parallel in the aforementioned longitudinal direction and so as to form repeated undulations in the aforementioned transverse direction. The nonwoven sheet has a bottom surface which, when the aforementioned nonwoven sheet is placed on a horizontal surface with the back surface (opposite of the front surface in contact with the skin of the wearer) down, is the surface that contacts the aforementioned horizontal surface. On the back surface of the aforementioned grooves are formed in the aforementioned longitudinal direction alternately areas where the height from the bottom surface is relatively high and parts corresponding to the bottom surface. Openings are formed at least in the areas where the height from the bottom surface is relatively high, and a space is provided below said openings.

A slide processing apparatus is used to apply substances for processing specimens. The slide processing apparatus can deliver a substance to a mounting surface of a slide carrying the specimen. The substance can be contacted with an opposable held by an opposable holder device. The opposable is pulled towards the slide by the substance. The substance can spread along the mounting surface as the opposable is flattened. If the substance is a liquid, the opposable can float on the liquid to form a thin liquid layer.

In a method for producing an R-Fe-B rare earth sintered magnet, there is firstly prepared an R-Fe-B rare earth sintered magnet body which contains, as the main phase, R2Fe14B compound crystal grains containing a light rare earth element RL (at least one of Nd and Pr) as a main rare earth element R, and then a heavy rare earth element RH is diffused into the rare earth sintered magnet body from the surface thereof by heating the sintered magnet body while supplying the heavy rare earth element RH (at least one substance selected from the group consisting of Dy, Ho and Tb) to the surface of the sintered magnet body.

Methods and solutions for forming self assembled organic monolayers that are covalently bound to metal interfaces are presented along with a device containing a self assembled organic monolayer. Embodiments of the present invention utilize self assembled thiolate monolayers to prevent the electromigration and surface diffusion of copper atoms while minimizing the resistance of the interconnect lines. Self assembled thiolate monolayers are used to cap the copper interconnect lines and chemically hold the copper atoms at the top of the lines in place, thus preventing surface diffusion. The use of self assembled thiolate monolayers minimizes the resistance of copper interconnect lines because only a single monolayer of approximately 10 Å and 20 Å in thickness is used.

An illumination apparatus is disclosed in the invention. The illumination apparatus includes a cavity with a diffusion surface, a light source, a light-spreading device, and at least one optically-conditioning surface with a wavelike array formed thereon. The light-spreading device and the optically-conditioning surface spread the light generated by the light source. The light-spreading device includes a wing-shaped protrusion part, a light incident surface, a recess located away from the light incident surface, and an optically-conditioning surface including a wavelike array, wherein the wavelike array has a wavefront direction.

The present invention aims to provide an antiglare light diffusing member utilizing internal diffusion and surface diffusion in combination, wherein a surface haze value mainly representing the degree of the surface diffusion and an internal haze value mainly representing the degree of the internal diffusion are easily adjusted independently from each other. An antiglare light diffusing member comprising an antiglare light diffusing layer comprising a binder matrix and a particle A and a particle B on a transparent base material, wherein the difference between the refraction index of the particle A and the refraction index of the binder matrix is less than 0.02, and the difference between the refraction index of the particle B and the refraction index of the binder matrix is in the range of 0.03-0.20.

A doped slab region is described for use around a ridge waveguide, for controlling the refractive index of the waveguide material. Instead of simply diffusing dopant in from a surface of the slab region adjacent the waveguide, an area of the slab region is etched and dopant diffused in from a side face of the etched region. Thus, the dopant profile is established from a horizontal direction, allowing the profile to be controlled. A simple vertically uniform doping profile can thus be provided, leading to a vertically uniform current density, or an anisotropic wet etch can be applied after the initial etch to provide a profile which concentrates the current density at a selected height in the slab region.

An image sensor includes a semiconductor substrate of a first conductivity type, a photodiode of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located over the photodiode, a thin surface diffusion region formed on the surface of the HAD region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.

A process for reducing the incidence of a secondary reaction zone (SRZ) in alloys prone to SRZ formation, particularly superalloys that have a high refractory element content. The process finds use with articles having a wall region that defines external and internal surfaces on the exterior and within the article, respectively. Diffusion coatings are formed on the internal and external surfaces of the article, with at least the diffusion coating on the external surface comprising an additive layer and a diffusion zone that is beneath the additive layer and extends into the wall region. The additive layer and at least a portion of the diffusion zone of the external diffusion coating is then removed to define an exposed surface region on the exterior of the article. An overlay coating is then deposited on the exposed surface region.

The invention relates to the technical field of water reducing agents, particularly to a damped water reducing agent for concrete. The water reducing agent comprises 0.5-3% of a quaternary ammonium salt type clay stabilizer, 0.5-1.5% of inorganic kali salt, 3-10% of an organophosphorus series scale inhibitor, 15-20% of a polycarboxylic acid water reducing agent for high performance, and 70.7-78.5% of water. According to the water reducing agent, the quaternary ammonium salt type clay stabilizer and the inorganic kali salt are used for reducing the thickness of a diffused double layer and Zeta potential on the surface of the clay and suppressing expansion and disperse of the clay, the organophosphorus series scale inhibitor is used for attaching to the surface of the clay, molecular weight of the organophosphorus series scale inhibitor is small, so that few organophosphorus series scale inhibitor can attach to the surface of the clay to achieve good absorption and the effect is obvious. Simultaneously, the invention further discloses a preparation method for the water reducing agent. The preparation method is simple in process and reliable in operation.

A wall in which there is formed at least one cooling channel, said wall being cooled by cool air flowing in the channel, the channel comprising a hole and a diffusion portion, the hole opening out at one end into the inside surface of the wall, and at its other end into the diffusion portion where it forms an orifice, the diffusion portion flaring around said orifice and opening out into the outside surface of the wall, the diffusion portion having a bottom whose front end is substantially plane, sloping, and extending in front of the orifice, and also having a margin extending behind, round the sides, and in front of the orifice, said margin joining the sides of the front end. A method and an electrode for making such a cooling channel. A turbomachine blade presenting such a wall.

There is provided a camera-shake correction mechanism by which camera shaking is corrected for by moving an imaging device on a plane that is orthogonal to an optical axis and in directions that are mutually orthogonal. The mechanism includes a heat dissipating mechanism that diffuses heat from the imaging device into atmosphere from a rear surface of the imaging device.

An iron-type golf club head has a face having a face surface of a flat surface, and a hosel which is continuous with the face on its heel side. A shaft insertion hole is disposed in the hosel. A protrusion protruding rearward in the vicinity of the center in a toe-heel direction is disposed. A material of the golf club head is pure iron having a high purity of at least 99.995%, for instance, a purity within a range of 99.995 to 99.9999%. The golf club head is subjected to carburizing so that carbon diffuses to a range of about 0.2 to 0.5 mm from the surface.

The invention discloses a three-layer dielectric passivation film PERC solar cell and the manufacturing process, belongs to the technical field of solar photovoltaic power generation and aims to provides the three-layer dielectric passivation film PERC solar cell. The manufacturing process comprises steps of (1), pre-cleaning and texturing a silicon wafer; (2), preparing a PN junction on the surface of a silicon substrate through diffusion; (3), laser doping; (4), etching and backside polishing; (5), oxidation annealing and growth of SiO2; (6), double-sided alumina precipitation; (7), back andfront silicon nitride precipitation; (8), laser grooving; (9), screen printing; (10), sintering; (11), LID light decaying; and (12), I V testing. The manufacturing process is advantaged in that the comprehensive absorption utilization rate of the incident light of the silicon wafer surface and a bulk can be effectively enhanced, the battery's short-circuit current and the open circuit voltage canbe enhanced, and the anti-light decay and anti-PID stability and reliability performance of the structural battery are improved.

The invention belongs to the technical field of air purification, in particular to an adsorption-degradation filter element and an air purifier using the same. The filter element comprises a mixture of active carbon and titanium dioxide or a composite layer structure of active carbon and titanium dioxide; the filter element takes the active carbon as a carrier to form a circulation process consisting of carrier adsorption, surface diffusion, photocatalytic degradation, in-situ regenerative adsorption capability and re-adsorption of pollutants; and synergistic effect of adsorption and photocatalytic degradation is generated and the purification effect is far more than the total purification effect of a filtering unit and a photocatalyst in the prior art, thus achieving an effect that one plus one is greater than two. Compared with the conventional air purifier, the air purifier using the adsorption-degradation filter element has the advantages of reasonable design, simple structure, device miniaturization, small floor area, composite air purification, high purification efficiency and the like, and can be widely applied to places such as houses, vehicles, and the like.

The invention discloses a floating body impeller type surge machine which comprises a motor, a gear box connected with the motor, and a floating body impeller connected with the gear box. The floating body impeller type surge machine is characterized in that the floating body impeller comprises an annular floating body, and a plurality of blades are arranged on the outer side below the annular floating body. The invention can ensure that bottom water in a pool is lifted to the surface of the pool at low velocity and large flow during the work, a large range of waves are formed while a water body is subjected to oxygenation under the action of the blades of the floating body impeller, and disperse along the surface without blockage, thus the oxygenation of the bottom water is promoted and the harmless speed of harmful substances is increased.

An iron-type golf club head has a face which has a face surface of a flat shape, and a hosel which is continuous with the face on its heel side. A shaft insertion hole is disposed in the hosel. A protrusion protruding rearward is disposed in the vicinity of the center in a toe-heel direction. A material of the golf club head is pure iron having a high purity of at least 99.8%, for instance, pure iron having a purity within a range of 99.995 to 99.9999%. The golf club head is subjected to carburizing so that carbon diffuses up to about 0.2 to 0.5 mm from the surface. A region within 0.2 mm from the face surface has a hardness of HV 300 to 600, and a region where a distance from the face surface is 0.7 mm or more has a hardness of HV 100 or lower.

An in-vehicle camera device which is mounted on a vehicle and which captures a periphery image collected from a lens (1a), wherein the surface of the lens (a1) has a water-repellent angle that is equal to or smaller than 100 degrees, preferably equal to or smaller than 60 degrees, so that the water attached to the surface turns into a film. As a consequence, the surface of the lens (1a) exhibits higher hydrophilic properties, and when water droplets attach to the film during rainfall, the water droplets spread over the surface of the lens (1a) and form a water film. Thus, it is possible to immediately remove matter such as dirt when matter attaches to the surface of the lens (1a) and it is possible to keep the surface of the lens (1a) constantly clean.

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 mu m and 20 mu m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7x10-7 cm2 / sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

The invention relates to a shale gas apparent permeability calculation method considering multi-factor influence, which comprises the following steps: (1) reconstructing a shale three-dimensional digital core based on a shale two-dimensional profile scanning electron microscope image by adopting a multi-point geostatistics method; (2) calculating the porosity, tortuosity and porous medium characteristic length of the shale three-dimensional digital rock core; and (3) calculating the gas permeability in the organic matter and inorganic matter of the shale. According to the method, the influenceof the pore structure, different pore types (organic matter pores and inorganic matter pores), adsorption and desorption, surface diffusion, gas slippage, stress sensitivity and critical property change in the shale gas reservoir on the gas flow capacity is fully considered, and the shale gas flow capacity under the conditions of different pore structures and gas reservoirs can be accurately predicted.

Provided is a zinc-plated steel sheet for hot pressing having outstanding surface characteristics, comprising: a steel foundation plate comprising a metal surface diffusion layer of which the Gibbs free energy reduction per mole of oxygen during oxidation is less than that of Cr; an aluminum-rich layer containing at least 30 wt. % of aluminium formed on the surface diffusion layer, and a zinc plating layer formed on the aluminum-rich layer. In this way, a metal having a low affinity for oxygen is coated to an effective thickness prior to annealing and thus the creation of annealing oxides at the surface of the steel sheet is suppressed and a uniform zinc plating layer is formed, and alloying of the zinc plating layer is promoted during press-processing heat treatment. Cracking in the steel foundation plate during hot press molding is prevented.

The invention provides a novel method for removing a diffusion layer on a single surface, the method is that a front surface on an N-type single crystal silicon wafer substrate is firstly formed with an N<PLUS> layer by phosphorus diffusion, a silicon nitride thin film protection layer is deposited at the front surface, and a back surface uses the strong base corrosion for removing the back surface diffusion layer; the invention can significantly improve the conversion efficiency of an N-type single crystal silicon solar cell and reduce the cost, the process is simple, the operation is convenient; the invention is applicable to large-scale production, particularly simplifies the technology of removing the back N-type diffusion layer, thus greatly improving production efficiency.

The present invention relates to a surface light source, including a light source section made up of plural light emitting diodes and lenses that expand light from these light emitting diodes. The lens in the light source section has a light incident surface on which light from the light emitting diode is incident with an optical axis at a center, and a light exit surface that expands and emits the incident light. The light incident surface has a continued depressed surface, while the light exit surface has a continued projected surface. The lens performs such that “sag Y” decreases from a maximum value “sag Y0” with an increment of “θi”, where θi is an angle included between a straight line, connecting an arbitrary point on the light exit surface and a base point on the optical axis which corresponds to a position of the light emitting diode, and the optical axis; sag Y is a distance measured in a light axis direction from the base point on the optical axis to the arbitrary point on the light exit surface; and “sag Y0” is a value of sag Y when angle θi is 0 (zero) degree, and wherein the light exit surface except a vicinity of the optical axis takes a shape satisfying a relation of 10 degrees<θmin<30 degrees, where θi takes a minimum value, i.e. θmin when curvature C of a micro-section on the light exit surface in a sectional view which includes the optical axis takes a minimum value.

In a method of manufacturing an integrated optical device using a wafer of lithium niobate, an optical waveguide is formed in the wafer by diffusing from a surface thereof a metal such as titanium, nickel or zinc and which changes the refractive index of the lithium niobate. A chemical vapor deposition process is used to deposit on the wafer surface a silicon dioxide buffer layer, the process being operated with the temperature of the wafer substantially in the region of about 170 DEG C. to 225 DEG C. A metallic electrode array is deposited on the silicon dioxide buffer layer, and then the wafer is mounted in a package, with suitable optic and electric connections being made thereto. The package is hermetically sealed to protect the connected wafer from the environment.

Compound semiconductor devices and methods of doping compound semiconductors are provided. Embodiments of the invention provide post-deposition (or post-growth) doping of compound semiconductors, enabling nanoscale compound semiconductor devices including diodes and transistors. In one method, a self-limiting monolayer technique with an annealing step is used to form shallow junctions. By forming a sulfur monolayer on a surface of an InAs substrate and performing a thermal annealing to drive the sulfur into the InAs substrate, n-type doping for InAs-based devices can be achieved. The monolayer can be formed by surface chemistry reactions or a gas phase deposition of the dopant. In another method, a gas-phase technique with surface diffusion is used to form doped regions. By performing gas-phase surface diffusion of Zn into InAs, p-type doping for InAs-based devices can be achieved. Both bulk and nanowire devices using compound semiconductors can be fabricated using these surface and gas-phase doping processes.

The invention provides an optical membrane structure and a manufacturing method thereof. The manufacturing method is characterized in that: through a coextrusion process, a main substrate, a first transmission material and a second transmission material are combined into a whole to change the light advancing direction; in a rolling mode, a light guide microstructure is formed on the surface of thefirst transmission material directly; moreover, at least one layer or each layer of the main substrate, the first transmission material and the second transmission material is added with dispersion particles to form the optical membrane structure with scratch resistance and high production yield. Therefore, the invention can provide the optical membrane structure with high evenness; the structurecan be effectively prevented from structural warpage generated due to environmental change through coextrusion integral formation; and the improved optical membrane with scratch resistance and high production yield is formed through the design of the surface dispersion particles.