A novel method of diffused layer removal on the single surface

A diffusion layer, single-sided technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as complex procedures, reduced photoelectric conversion efficiency, and unfavorable large-scale production, to simplify processes, eliminate Low cost and easy operation

Inactive Publication Date: 2008-07-09
NINGBO ULICA SOLAR SCIENCE & TECHNOLOGY CO LTD
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Problems solved by technology

But even if it is back-to-back diffusion, there will still be an N-type diffusion layer on the edge of the back, which will greatly reduce the photoelectric conversion efficiency, so the N-type diffusion layer

Method used

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Embodiment Construction

[0015] Processing step of the present invention is:

[0016] (1) Front chemical pre-cleaning, suede corrosion process:

[0017] Put a single crystal silicon wafer with a resistivity of 0.5-6Ω.cm in 0.5%-5% Na 2 SiO 3 solution, perform ultrasonic pre-cleaning for 5-30 minutes, then rinse with pure water, and then use heated NaOH or KOH solution to remove the surface damage layer, use 0.5%-5% NaOH or KOH solution for suede corrosion, after soaking in dilute hydrochloric acid , rinse with deionized water, and dry.

[0018] (2) Phosphorus diffusion process:

[0019] N + Layer adopts conventional gas phase carrying POCl 3 Thermal diffusion, silicon wafers are placed back to back in a quartz boat during diffusion, the temperature is 800-950°C, and the sheet resistance is controlled at 20-60Ω / cm2.

[0020] (3) Plasma etching process:

[0021] The edge diffusion layer of the diffusion sheet is etched away by fluorine ion in a plasma etching machine, and the edge resistance is ≥...

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Abstract

The invention provides a novel method for removing a diffusion layer on a single surface, the method is that a front surface on an N-type single crystal silicon wafer substrate is firstly formed with an N<PLUS> layer by phosphorus diffusion, a silicon nitride thin film protection layer is deposited at the front surface, and a back surface uses the strong base corrosion for removing the back surface diffusion layer; the invention can significantly improve the conversion efficiency of an N-type single crystal silicon solar cell and reduce the cost, the process is simple, the operation is convenient; the invention is applicable to large-scale production, particularly simplifies the technology of removing the back N-type diffusion layer, thus greatly improving production efficiency.

Description

technical field [0001] The invention relates to a novel aluminum back emitter junction N-type single crystal silicon solar cell structure and a preparation method thereof, in particular to a method for protecting the front side and removing the back diffusion layer. Background technique [0002] At present, the current international practice is to manufacture silicon solar cells by screen printing on P-type silicon wafers. This method has become stable, but there is very limited room for further improvement in cost performance. [0003] At present, the mature technology of N-type silicon solar cells in the world mainly uses boron diffusion to prepare the P-type emitter junction on the back, but in order to further improve the photoelectric conversion efficiency, a process is added on this basis to form N + / N Top Surface Field (FSF). But even if it is back-to-back diffusion, there will still be an N-type diffusion layer on the edge of the back, which will greatly reduce the...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 胡宏勋徐晓群孙励斌李华维陈斌黄跃文唐则祁
Owner NINGBO ULICA SOLAR SCIENCE & TECHNOLOGY CO LTD
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