59 results about "Layer removal" patented technology

The invention provides a semiconductor device and a preparation method thereof, and the method comprises the steps: enabling a pad oxide layer and a silicide barrier layer to cover the surfaces of a first region and a second region in a conformal manner, and removing the silicide barrier layer of the first region; the sacrificial material layer fills and covers the surfaces of the first region and the second region; part of the sacrificial material layer is removed to be lower than the preset height of the gate structure, the exposed pad oxide layer is removed, and the first region side wall structure is thinned to expose the top wall of the gate structure; and removing the sacrificial material layer, thinning the side wall structure in the first region, removing the pad oxide layer, exposing the surface of the substrate in the first region, and forming a metal silicide. After the silicide barrier layer is removed and before the side wall structure is thinned, the sacrificial material layer is arranged to cover the pad oxide layer on the surface of the substrate, the line width effect is reduced, meanwhile, the surface material of the substrate and doping distribution are protected against loss, and the limitation of the SPT technology on the metal silicide technology is reduced; and meanwhile, the etching selection ratio of the pad oxide layer removal and the first thinning process is set, so that the protection of the sacrificial material layer on the pad oxide layer is ensured.

The invention discloses an MEMS device and a preparation method thereof, and relates to the technical field of semiconductor devices. The MEMS device comprises a substrate layer, a stress matching layer and a doped polycrystalline silicon structure layer which are sequentially stacked from bottom to top, and the preparation method comprises the following steps: forming a sacrificial layer on the substrate layer, patterning the sacrificial layer, and defining anchor regions of the stress matching layer and the doped polycrystalline silicon structure layer; depositing a stress matching layer on the patterned sacrificial layer, wherein the stress matching layer is a silicon nitride-based composite film with stress increased from bottom to top in a gradient manner; depositing a doped polycrystalline silicon structure layer on the stress matching layer; and sequentially carrying out patterning treatment and anchor region annealing treatment on the doped polycrystalline silicon structure layer, and carrying out removal treatment and drying treatment on the sacrificial layer to prepare the MEMS device. The MEMS device prepared by the invention has the characteristics of high stress matching, uniform doping concentration and relatively good process compatibility.

The invention relates to a method for preparing a super-thick compact infiltrated layer through interface reactivation type cyclic nitridation, and aims to solve the problems that an infiltrated layer obtained through existing salt bath nitridation treatment is insufficient in thickness and poor in performance. The method for preparing the super-thick compact infiltrated layer comprises the following steps: 1, putting a preheated workpiece in a nitriding furnace into a molten salt bath medium, and carrying out salt bath nitriding treatment at the temperature of 380-650 DEG C; 2, carrying out layer removal treatment through stress-assisted surface subtractive machining to remove a surface compound layer of the workpiece; thirdly, the salt bath nitriding treatment and the layer removing treatment are repeated for multiple times; and 4, carrying out surface ultrasonic rolling post-treatment on the workpiece subjected to circulating salt bath nitriding. According to the method, a compound layer formed in the nitriding process is removed, the nitrogen atom diffusion driving force of subsequent nitriding treatment is enhanced, the nitrided layer subjected to circulating salt bath nitriding treatment has higher nitrogen concentration, the thicker nitrided layer is prepared, the depth and compactness of the nitrided layer of the metal workpiece can be remarkably improved, and the comprehensive performance of the nitrided layer is enhanced.

The invention relates to the technical field of micro-electro-mechanical system design and processing, in particular to a waveguide structure and a preparation method thereof. The method comprises the following steps: S1, etching the end surface of an SOI wafer to form a waveguide pattern; s2, depositing a first upper cladding layer on the end face of the SOI wafer, and performing CMP processing on the first upper cladding layer; s3, depositing a sacrificial layer on the first upper cladding, and performing graphical processing on the sacrificial layer to enable the sacrificial layer to cover the windowing region; s4, depositing a second upper cladding layer on the first upper cladding layer; s5, etching the second upper cladding layer in the windowing area, and stopping etching when the etching depth reaches the sacrificial layer; and S6, etching the sacrificial layer by adopting a Bosch process to obtain a waveguide structure. According to the method, a controllable sacrificial layer removal process system is constructed based on the difference of substrates made of different materials in an etching process, and damage to the surface of an exposed structure after windowing is reduced as much as possible while complete sacrificial layer etching is achieved through the Bosch process.

The present application relates to the technical field of micro-nano functional materials, and particularly relates to a high-efficiency light-heat conversion and wear-resistant super-hydrophobic coating, a preparation method thereof and an application thereof in ice prevention and removal, the preparation method adopts ammonium persulfate as an oxidant to initiate polymerization of pyrrole on the surface of halloysite nanotubes to generate polypyrrole, so as to obtain a halloysite nanotube composite material wrapped by polypyrrole. The super-hydrophobic coating is obtained by mixing the composite material with low-surface-energy polydimethylsiloxane, and the coating layer formed by the super-hydrophobic coating has the characteristics of high roughness and low surface energy, and thus has excellent hydrophobic performance. The coating layer also has good light-heat effect, flexibility, elasticity, mechanical performance, high-temperature resistance and durability. In addition, by adding hydrophobic nano-SiO2, the super-hydrophobic performance of the coating layer is further improved, and the hardness and wear resistance of the coating layer are also enhanced. Finally, the coating layer has excellent light absorption capacity and light-heat conversion efficiency, and realizes the performance of efficient protection and ice layer removal in the application of ice prevention and removal.

This invention discloses a whisker-reinforced aluminum nitride ceramic substrate with high thermal conductivity and high toughness, and its preparation method. The substrate comprises the following components by mass fraction: 1.5wt%~4wt% AlN single crystal whiskers, 4wt%~6wt% composite sintering aid, and the balance being AlN powder; the AlN single crystal whiskers undergo oxide layer removal treatment, and have an aspect ratio of 10~30. The preparation method includes: mixing the raw materials, mechanically stirring and ultrasonically dispersing them, adding a dispersant, binder, and plasticizer, ball milling to form a slurry, casting, drying, degreasing, and sintering at 1800~1880℃ in a nitrogen atmosphere at normal pressure to obtain a dense substrate. This invention, through extremely low whisker addition combined with oxide layer removal treatment, eliminates interfacial thermal resistance, achieving a thermal conductivity ≥250W / (m·K) and fracture toughness ≥4.0MPa·m. 1 / 2 The synergistic improvement in bending strength (≥550MPa) and the process compatibility with existing casting-atmospheric pressure sintering production lines make it suitable for electronic packaging fields such as SiC / GaN power devices and IGBT modules.

The utility model discloses a sputter film removing and re -passivation testing arrangement, including vacuum box and work piece, the top fixedly connected with the butt joint of vacuum box, the top threaded connection of butt joint has the sealing head, rotates and inserts in sealing head and has the worm wheel, the threaded connection of worm wheel has screw rod in, the top end rotationally connected with the top plate of screw rod, the top fixedly connected with a plurality of guide rods of sealing head, and the top plate and a plurality of guide rods slide sleeve joint, be equipped with the bellows between the top plate and sealing head, and the bellows cover the outside of screw rod. The utility model discloses through the argon gas input to the vacuum box through the air inlet pipe, then opens radio frequency power supply, and the alternating electric field between the anode and the cathode makes Ar atom ionization and forms the plasma, and the surface of work piece is bombarded, so that work piece is deformed layer removal, thereby overcoming the deformation layer introduced by mechanical film removing, reduce the influence factor that has not been considered in the past testing process, improve the test reliability.

The application discloses a kind of based on speed compensation's optical element fast conformal polishing method and device, including the initial surface error distribution of the optical element to be processed is measured and is converted to polar coordinates and is carried out azimuthal angle integration average, extract rotationally symmetric error component, obtain one-dimensional characteristic generatrix;According to one-dimensional characteristic generatrix and the preset material removal layer determines target removal amount distribution;Establish the removal function of polishing tool under the condition of setting process;Based on the two-dimensional convolution relationship between target removal amount distribution and removal function, the two-dimensional residence time surface distribution of the surface to be processed is calculated, and is mapped as one-dimensional residence time line distribution;According to the feed distance between adjacent processing positions and the corresponding residence time, the speed distribution curve in actual processing is calculated, and the feed speed is controlled accordingly, to realize optical element fast conformal polishing.The application can remove the surface texture and damage defect after turning or grinding at a fast speed, while inhibiting the deterioration of existing surface accuracy, shorten the optical element processing procedure.

The invention relates to a mask manufacturing method and a mask. The mask manufacturing method may comprise: a base material preparation step of preparing a base material including a base material first surface and a base material second surface positioned on the opposite side of the base material first surface; a first insulating layer forming step of forming a first insulating layer including an insulating first surface facing the substrate second surface, an insulating second surface located on the opposite side of the insulating first surface, and an insulating opening penetrating from the insulating first surface to the insulating second surface; a first metal layer forming step of forming, in the insulating opening, a first metal layer including a metal first surface facing the base material second surface and a metal second surface located on the opposite side of the metal first surface; an insulating layer removal step for removing the first insulating layer surrounded by the first metal layer in plan view; and a base material processing step in which a first opening that overlaps the first metal layer in plan view is formed in the base material.

The application discloses a construction method for removing refractory material in a blast furnace or hot blast furnace, comprising the following steps: S1, removing and cleaning furnace facilities; S2, making a hanging disc; S4, driving a excavator to the hanging disc; S5, connecting a lower lifting lug of a supporting leg with a lifting hook of a lifting device through a sling, installing a drop chain between the lower lifting lug and an upper lifting lug of a first layer after lifting the hanging disc to the first layer removal height; S6, removing the refractory material by the excavator, and removing the refractory material from a discharge port to a furnace bottom and then to a furnace mouth; and S7, repeating steps S5 and S6 to remove refractory material of a next layer. The application has the advantages of simple operation, stability and reliability, fast construction speed, low construction cost, effective saving of labor cost, complete and clean removal of the refractory material, safety and stability meeting the construction requirements, and greatly shortened construction period.

To provide a nail decoration method capable of shortening a time required in decorating nails.SOLUTION: A nail decoration method includes: a top gel layer removal process; a color gel layer removal process; a first base gel layer working process for cutting a first base gel layer G11 coated on a front surface of a nail plate 11 so as to thin the whole first base gel layer; a rough surface working process for performing rough-surface working on a gap area GAP on the front surface of the nail plate 11 and a front surface of the first base gel layer G11; and a base gel coating process for coating a base gel so as to cover the gap area GAP on the front surface of the nail plate 11 and the whole front surface of the first base gel layer G11 after the rough surface working process.SELECTED DRAWING: Figure 5

Provided is a method with which a recycled material can be produced without going through a complicated process by using a recovered material, even when the recovered material is a plastic label to which a TAC label is adhered or even when a container is added thereto.　In this production method for producing a recycled material from a recovered material derived from a container to which a label is attached, the recovered material includes a label composite, and in the label composite, a first label having a first ink layer and a first film substrate and a second label having an adhesive layer and a second film substrate are layered so that the adhesive layer adheres to the first film substrate. The production method comprises: an ink layer removal step in which the first ink layer is removed from the label composite to obtain a substrate composite in which the second film substrate is layered on the first film substrate via the adhesive layer; and a recycled material production step in which, after the ink layer removal step, a recycled material using the substrate composite as a raw material is obtained.

The utility model relates to the technical field of surface microstructure layer removal, and particularly discloses a surface microstructure layer removal device which comprises a handheld roller and a bearing table, the bearing table is horizontally arranged, the handheld roller comprises a roller, a supporting frame and a handle, the roller is rotationally installed in the supporting frame, and the handle is fixedly connected to the supporting frame; the roller comprises an abrasive particle roller and a viscous roller, the abrasive particle roller comprises an abrasive particle layer used for damaging a microstructure layer on the surface of a sample, and the viscous roller comprises an adhesive layer used for adhering abrasive dust falling off from the sample. According to the surface microstructure layer removing device, the etching time needed when the surface microstructure layer of the sample is removed can be shortened, meanwhile, the risk that the non-surface microstructure layer is damaged is reduced, the removing effect of the surface microstructure layer of the sample is good, and the water vapor residual quantity of the sample is reduced to 0.

The invention relates to an optical thin film, in particular to a method for removing Sn pollutants on the surface of a multilayer film based on wetting-stress removal, which comprises the following steps of: firstly depositing a layer of continuous Sn thin film on the multilayer film of which the surface is polluted by Sn, and then depositing a layer of Al2O3 thin film of which the thickness is greater than 100nm to form a layer to be removed; heating treatment is carried out in a vacuum environment, so that the to-be-removed layer has cracks under the action of dewetting-stress, and the binding force between the to-be-removed layer and the multi-layer film is reduced; and polishing the sample, and removing the to-be-removed layer on the surface of the multilayer film. According to the method for removing the Sn pollutants on the surface of the multilayer film, the Sn pollutants on the surface of the multilayer film can be efficiently removed on the premise that the structure of the multilayer film is not obviously affected, and then the optical function of the multilayer film is recovered.

A method of forming a portion of a gate all around field effect transistor (GAA FET) includes forming reserved locations in a recess formed in a portion of a substrate isolated by shallow trench isolation (STI), each reserved location interfacing with an extension region via a cap layer, the recess extending into an interlayer dielectric (ILD) formed on the substrate; selectively removing the reserved location relative to the substrate, the cap layer, and the STI; forming a selective cap layer at the bottom of the groove; performing a substrate removal process to perform isotropic etching on the substrate in the recess; performing a conformal deposition process to form spacer pads on exposed surfaces of the substrate and the selective cap layer within the recess; carving spacing pads on the side walls of the substrate and the STI in the groove; executing a cap layer removal process to remove the cap layer in the groove; and forming a metal contact in the groove.

A search revealed that this invention discloses a welding apparatus for the production of thermal protectors, relating to the field of thermal protector manufacturing technology. The apparatus includes a main component, a conveying and grinding component, and a wiping component. Before welding the contacts and bimetallic strip, this welding apparatus can efficiently grind the contact surface through the combined use of an oxide layer removal mechanism and a transmission mechanism. During grinding, the contacts can be conveyed, enabling simultaneous conveying and grinding. Furthermore, the grinding ring can be moved along the axis of the sliding roller during grinding, thereby improving grinding efficiency and ensuring thorough grinding of the contact surface. This removes the oxide layer at the welding points on the contact surface. After grinding, the wiping component wipes the contact surface to remove metal debris, preventing subsequent impact on welding strength due to metal debris.

To provide a method for removing a coating layer, which can more easily remove the coating layer from a laminated film. [Solution] A method for removing a coating layer, comprising, in this order: a preparation step of preparing a laminated film (e.g., roll 50C) having a base film and a coating layer; an ultrasonic treatment step of irradiating the laminated film with ultrasonic waves via water W1; a removal step of removing the coating layer from the laminated film by treating the laminated film with treated water or water vapor; and a recovery step of recovering the base film, wherein the coating layer includes a hydrophilic and water-insoluble intermediate layer and a release agent layer, and the intermediate layer is disposed between the base film and the release agent layer.

The invention discloses efficient demolding equipment and demolding method for a mold surface carbon film layer based on a variable volume cavity, relates to the technical field of precision mold surface treatment, and provides a volume self-adaptive cavity design and process parameter dynamic matching strategy. By arranging a variable volume cavity module and a built-in specific algorithm dynamic control unit and combining dynamic matching of parameters such as radio frequency, gas flow and temperature, closed-loop control of'cavity volume change-process parameter self-adaption-optimal film stripping effect 'is achieved, efficient and uniform film stripping of molds of different specifications is achieved, and the production efficiency is improved. Therefore, the limitation of the existing vacuum plasma carbon film layer removal method is effectively solved.

A final polishing method for a wafer, and a polished wafer. In the final polishing method for a wafer, the wafer comprises a first layer to be removed and a second layer to be removed, which are adjacent to each other and made of different materials. The final polishing method comprises: performing first polishing on a wafer, so as to remove a part of a first layer to be removed; and performing second polishing on the wafer that has been subjected to the first polishing, so as to remove the remaining part of said first layer and a second layer to be removed, wherein the material removal rate of the second polishing is less than the material removal rate of the first polishing.

The utility model relates to the technical field of oxide layer removal, and discloses aluminum block surface oxide layer removal equipment which comprises a table top, a cleaning bin is fixedly connected to the left side of the top of the table top close to the front end, a plurality of curtains are fixedly connected to the front side of the cleaning bin, and a plurality of spray heads are fixedly connected to the left side and the right side of the cleaning bin close to the edge. A water inlet pipe communicates with the right side of the spray head close to the middle, the other end of the water inlet pipe communicates with a water outlet tank, a third circular hole is formed in the bottom of the inner wall of the cleaning bin close to the middle, and a water outlet pipe is fixedly connected to the lower end of the inner wall of the third circular hole. According to the aluminum block cleaning device, firstly, the aluminum block with the oxide layer removed is placed in the cleaning bin, at the moment, water is injected into the water outlet tank through the water receiving opening, then the aluminum block is cleaned and can be placed in the storage barrel so as to be taken and used conveniently, and the effect that the aluminum block with the oxide layer removed is cleaned and then stored is achieved.

The utility model provides a sample carrier for a failure analysis sample and a preparation device of the sample carrier. The sample holder comprises a sample holder body, a rotating part and a shell. The bottom surface of the sample seat is used for fixing a sample, the rotating part comprises a stator and a rotor, the rotor is connected with the sample seat, the shell is filled with buffer liquid, and the shell is connected with the stator. And through the arrangement of the buffer liquid, when the grinding pressure is suddenly increased, the buffer liquid can absorb suddenly changed pressure, the buffer effect is achieved, and the situation of excessive layer removal is avoided. The buffer liquid comprises the elastomer capsule and the silicone oil with the preset volume ratio, so that the effective grinding pressure can be set to ensure that a certain specific layer is removed, and the removal requirements of different film layers are met. Through the arrangement of the rotating part, the sample seat is driven to rotate by utilizing the linear velocity difference generated by different distances from the axis during grinding, so that the grinding time of different positions of a sample is equal to the number of contacted grinding materials, and uniform layer removal is realized.

The utility model relates to a continuous feeding and surface treatment integrated device for a copper strip. The continuous feeding and surface treatment integrated device comprises an unwinding unit, a grinding unit and a shaping unit arranged between the unwinding unit and the grinding unit. On one hand, copper strip unwinding and feeding are carried out on the basis that the center line of a copper strip coil is kept vertical, the copper strip unwinding difficulty is greatly reduced, the risk that the copper strip is deformed and broken due to stress is reduced, and the feeding quality of the copper strip is effectively improved; on the other hand, the surface of the copper strip is kept flat by arranging the shaping channel so as to ensure that the surface of the copper strip is comprehensively and uniformly ground, the oxide layer removal rate is increased, and the product yield is increased; in addition, the structure is simple, implementation is convenient, power consumption is low, and cost is saved.

The application discloses a kind of coating edge laser engraving methods of film glass, belong to glass processing technical field.The scheme uses laser to remove the coating of glass product surface edge excess, according to the total thickness of film material and adhesive layer, the maximum coating thickness when film is bubble-free, the maximum coating thickness when light leaks, the minimum step width when film is bubble-free;According to the thickness range of coating, the maximum coating thickness when film is bubble-free, the maximum coating thickness when light leaks, the minimum step width when film is bubble-free, determine the step number, remove layer, each layer removal height, each layer removal width;Adjust laser power, determine the laser power parameter closest to the each layer removal height, create the corresponding laser engraving file of each layer;According to from top to bottom order, in turn, each layer engraving is carried out, and step structure is formed.The application solves the problem that coating edge is not neat, gradient is big, hand is scraped, is easily damaged in transfer, and film produces bubble.

The invention provides an interlayer cleaning and auxiliary cooling device and method for additive and subtractive composite manufacturing, and relates to the technical field of electric arc additive manufacturing. The device comprises a supporting frame used for adjusting the direction and fixing the position; a multifunctional brush is arranged at the bottom of the support frame and is used for executing at least one task of cooling, oxide layer removal and cooling liquid cleaning on a formed part on the substrate; the multifunctional brush is connected with the water supply module and the air supply module; wherein the water supply module is used for providing a water source required when the multifunctional brush executes a task; the gas supply module is used for providing a gas source required when the multifunctional brush executes a task; the supporting frame, the multifunctional brush, the water supply module and the air supply module are all connected with the intelligent control module. Through the integrated design of integrated oxide layer removal, cooling liquid cleaning and rapid cooling, the defect problems of air holes, cracks and the like caused by oxide inclusion and cooling liquid residues in traditional additive and subtractive manufacturing are solved.

The application provides a method for realizing double-layer waveguide, comprising the following steps: S1: first photoetching; photoresist is coated on the surface of a hard mask layer to expose the hard mask layer, and then the exposed hard mask layer and the lower cladding layer are etched to complete the etching of the hard mask layer and the lower cladding layer; S2: second photoetching and lower cladding layer etching; the remaining photoresist is cleaned, new photoresist is coated again, the lower cladding layer is etched again by using oblique cut layer photoetching; S3: hard mask layer removal; the coated photoresist is completely cleaned, and the whole hard mask layer on the surface is removed by etching; S4: film forming; the light waveguide layer (which can be silicon nitride, porous silicon or other dielectric materials) is grown on the surface of the etched lower cladding layer; S5: polishing; the light waveguide material on the surface of the wafer is removed; and S6: upper cladding layer growth. The application realizes zero-width size of the overlapping part of the two masks by using oblique cut layer photoetching, so that the photoetching limitation is avoided.

To provide a coating layer removal method capable of achieving both suppression of breakage of a base material layer and suppression of insufficient removal of a coating layer.SOLUTION: A coating layer removal method is a method for removing a coating layer from a resin structure 1 including a base material layer made of a resin and the coating layer provided on a surface of the base material layer. This method includes a measurement step of measuring a thickness of the coating layer by detecting a boundary portion between the base material layer and the coating layer, a determination step of determining a condition of high-pressure water jetted from a nozzle based on a relationship between the thickness of the coating layer and the condition of the high-pressure water and the thickness of the coating layer measured in the measurement step, and a removal step of removing the coating layer from the resin structure by jetting the high-pressure water from the nozzle based on the condition determined in the determination step.SELECTED DRAWING: Figure 1

The application relates to an epitaxial layer removal method, a rework method and a semiconductor process method. The epitaxial layer removal method comprises the following steps: providing a substrate, the substrate is provided with a metal structure and an epitaxial layer, the metal structure is located in the epitaxial layer; and removing the epitaxial layer by using a wet etching solution; under the same condition, the removal rate of the wet etching solution to the epitaxial layer is greater than the removal rate of the wet etching solution to the metal structure, and is greater than the removal rate of the wet etching solution to an oxide. The substrate is provided with a metal structure and an epitaxial layer, the metal structure is located in the epitaxial layer, the removal rate of the wet etching solution to the epitaxial layer is greater than the removal rate of the wet etching solution to the metal structure under the same condition, and the metal structure is not seriously damaged when the epitaxial layer is removed by using the wet etching solution, so that the problem that there is no good way to remove the epitaxial silicon when the epitaxial layer on the front surface of the substrate is abnormal can be solved.

The application provides a low-temperature grinding wheel abrasive particle dressing method, system and device based on hydroxyl modification, comprising: controlling rotation of a polishing disc and spraying hydroxyl radicals on the polishing disc to form a modified layer on the polishing disc; controlling rotation of a grinding wheel to be dressed and abutting against the modified layer on the polishing disc to make the abutting surface undergo hydroxyl dehydration condensation reaction, and the part of the grinding wheel that undergoes hydroxyl dehydration condensation reaction is removed in an atomic level layer-by-layer material removal manner under mechanical shearing action generated by relative motion of the grinding wheel and the polishing disc. The application uses a mixed gas of argon and water vapor, excites microwave plasma in a low-temperature manner, realizes micro-removal of diamond with small mechanical force, and further achieves dressing of resin-based sintered grinding wheels, and removes diamond in an atomic level layer-by-layer removal manner, so that the resin-based sintered grinding wheel surface can achieve lower roughness and realize higher smoothness of the diamond surface.

This invention relates to the field of printing screen technology, and provides a method for preparing grid patterns on stainless steel screens, comprising: sequentially performing degreasing cleaning, oxide layer removal, and hydrophilic treatment on the stainless steel screen to be processed to obtain a pretreated screen; coating the surface of the pretreated screen with photoresist, and performing exposure and development to obtain a screen with photoresist patterns; performing wet etching on the screen with photoresist patterns using a composite etching solution to obtain an etched screen, wherein the composite etching solution includes ferric chloride, a corrosion inhibitor, and an oxidant, and the wet etching includes first performing low-speed etching followed by high-speed etching, wherein the etching rate of the low-speed etching is lower than that of the high-speed etching; and peeling off the photoresist on the etched screen. By performing a three-step pretreatment on the stainless steel screen to be processed, combined with the use of a composite etching solution for first performing low-speed etching followed by high-speed etching, the problems of uneven etching, low etching efficiency, and severe side etching existing in the prior art are solved.

The invention discloses a graphical etching method. The graphical etching method comprises the following steps: forming a first process layer; and forming a first SOC layer. And growing an LTO layer with a first thickness. And forming a second SOC layer. And coating photoresist and exposing to open the first area. And performing a first plasma etching process to remove the second SOC layer in the first region and stop on the LTO layer. And performing a second plasma etching process to remove the LTO layer in the first region, and after the LTO layer is removed, completely consuming the photoresist outside the first region and partially consuming the second SOC layer outside the first region. A third plasma etching process is carried out to remove the first SOC layer in the first area, the second SOC layer outside the first area is completely consumed after the third plasma etching process is completed, and the LTO layer is left; and removing the LTO layer by using DHF and completely removing residues. And removing the first process layer in the first region by taking the first SOC layer as a mask. And removing the first SOC layer. According to the invention, formation of extremely small residue defects can be avoided.