27 results about "Layer removal" patented technology

The invention relates to the technical field of micro-electro-mechanical system design and processing, in particular to a waveguide structure and a preparation method thereof. The method comprises the following steps: S1, etching the end surface of an SOI wafer to form a waveguide pattern; s2, depositing a first upper cladding layer on the end face of the SOI wafer, and performing CMP processing on the first upper cladding layer; s3, depositing a sacrificial layer on the first upper cladding, and performing graphical processing on the sacrificial layer to enable the sacrificial layer to cover the windowing region; s4, depositing a second upper cladding layer on the first upper cladding layer; s5, etching the second upper cladding layer in the windowing area, and stopping etching when the etching depth reaches the sacrificial layer; and S6, etching the sacrificial layer by adopting a Bosch process to obtain a waveguide structure. According to the method, a controllable sacrificial layer removal process system is constructed based on the difference of substrates made of different materials in an etching process, and damage to the surface of an exposed structure after windowing is reduced as much as possible while complete sacrificial layer etching is achieved through the Bosch process.

The present application relates to the technical field of micro-nano functional materials, and particularly relates to a high-efficiency light-heat conversion and wear-resistant super-hydrophobic coating, a preparation method thereof and an application thereof in ice prevention and removal, the preparation method adopts ammonium persulfate as an oxidant to initiate polymerization of pyrrole on the surface of halloysite nanotubes to generate polypyrrole, so as to obtain a halloysite nanotube composite material wrapped by polypyrrole. The super-hydrophobic coating is obtained by mixing the composite material with low-surface-energy polydimethylsiloxane, and the coating layer formed by the super-hydrophobic coating has the characteristics of high roughness and low surface energy, and thus has excellent hydrophobic performance. The coating layer also has good light-heat effect, flexibility, elasticity, mechanical performance, high-temperature resistance and durability. In addition, by adding hydrophobic nano-SiO2, the super-hydrophobic performance of the coating layer is further improved, and the hardness and wear resistance of the coating layer are also enhanced. Finally, the coating layer has excellent light absorption capacity and light-heat conversion efficiency, and realizes the performance of efficient protection and ice layer removal in the application of ice prevention and removal.

The utility model discloses a sputter film removing and re -passivation testing arrangement, including vacuum box and work piece, the top fixedly connected with the butt joint of vacuum box, the top threaded connection of butt joint has the sealing head, rotates and inserts in sealing head and has the worm wheel, the threaded connection of worm wheel has screw rod in, the top end rotationally connected with the top plate of screw rod, the top fixedly connected with a plurality of guide rods of sealing head, and the top plate and a plurality of guide rods slide sleeve joint, be equipped with the bellows between the top plate and sealing head, and the bellows cover the outside of screw rod. The utility model discloses through the argon gas input to the vacuum box through the air inlet pipe, then opens radio frequency power supply, and the alternating electric field between the anode and the cathode makes Ar atom ionization and forms the plasma, and the surface of work piece is bombarded, so that work piece is deformed layer removal, thereby overcoming the deformation layer introduced by mechanical film removing, reduce the influence factor that has not been considered in the past testing process, improve the test reliability.

The application discloses a kind of based on speed compensation's optical element fast conformal polishing method and device, including the initial surface error distribution of the optical element to be processed is measured and is converted to polar coordinates and is carried out azimuthal angle integration average, extract rotationally symmetric error component, obtain one-dimensional characteristic generatrix;According to one-dimensional characteristic generatrix and the preset material removal layer determines target removal amount distribution;Establish the removal function of polishing tool under the condition of setting process;Based on the two-dimensional convolution relationship between target removal amount distribution and removal function, the two-dimensional residence time surface distribution of the surface to be processed is calculated, and is mapped as one-dimensional residence time line distribution;According to the feed distance between adjacent processing positions and the corresponding residence time, the speed distribution curve in actual processing is calculated, and the feed speed is controlled accordingly, to realize optical element fast conformal polishing.The application can remove the surface texture and damage defect after turning or grinding at a fast speed, while inhibiting the deterioration of existing surface accuracy, shorten the optical element processing procedure.

The invention relates to a mask manufacturing method and a mask. The mask manufacturing method may comprise: a base material preparation step of preparing a base material including a base material first surface and a base material second surface positioned on the opposite side of the base material first surface; a first insulating layer forming step of forming a first insulating layer including an insulating first surface facing the substrate second surface, an insulating second surface located on the opposite side of the insulating first surface, and an insulating opening penetrating from the insulating first surface to the insulating second surface; a first metal layer forming step of forming, in the insulating opening, a first metal layer including a metal first surface facing the base material second surface and a metal second surface located on the opposite side of the metal first surface; an insulating layer removal step for removing the first insulating layer surrounded by the first metal layer in plan view; and a base material processing step in which a first opening that overlaps the first metal layer in plan view is formed in the base material.

The application discloses a construction method for removing refractory material in a blast furnace or hot blast furnace, comprising the following steps: S1, removing and cleaning furnace facilities; S2, making a hanging disc; S4, driving a excavator to the hanging disc; S5, connecting a lower lifting lug of a supporting leg with a lifting hook of a lifting device through a sling, installing a drop chain between the lower lifting lug and an upper lifting lug of a first layer after lifting the hanging disc to the first layer removal height; S6, removing the refractory material by the excavator, and removing the refractory material from a discharge port to a furnace bottom and then to a furnace mouth; and S7, repeating steps S5 and S6 to remove refractory material of a next layer. The application has the advantages of simple operation, stability and reliability, fast construction speed, low construction cost, effective saving of labor cost, complete and clean removal of the refractory material, safety and stability meeting the construction requirements, and greatly shortened construction period.

To provide a method for removing a coating layer, which can more easily remove the coating layer from a laminated film. [Solution] A method for removing a coating layer, comprising, in this order: a preparation step of preparing a laminated film (e.g., roll 50C) having a base film and a coating layer; an ultrasonic treatment step of irradiating the laminated film with ultrasonic waves via water W1; a removal step of removing the coating layer from the laminated film by treating the laminated film with treated water or water vapor; and a recovery step of recovering the base film, wherein the coating layer includes a hydrophilic and water-insoluble intermediate layer and a release agent layer, and the intermediate layer is disposed between the base film and the release agent layer.

A final polishing method for a wafer, and a polished wafer. In the final polishing method for a wafer, the wafer comprises a first layer to be removed and a second layer to be removed, which are adjacent to each other and made of different materials. The final polishing method comprises: performing first polishing on a wafer, so as to remove a part of a first layer to be removed; and performing second polishing on the wafer that has been subjected to the first polishing, so as to remove the remaining part of said first layer and a second layer to be removed, wherein the material removal rate of the second polishing is less than the material removal rate of the first polishing.

The utility model relates to the technical field of oxide layer removal, and discloses aluminum block surface oxide layer removal equipment which comprises a table top, a cleaning bin is fixedly connected to the left side of the top of the table top close to the front end, a plurality of curtains are fixedly connected to the front side of the cleaning bin, and a plurality of spray heads are fixedly connected to the left side and the right side of the cleaning bin close to the edge. A water inlet pipe communicates with the right side of the spray head close to the middle, the other end of the water inlet pipe communicates with a water outlet tank, a third circular hole is formed in the bottom of the inner wall of the cleaning bin close to the middle, and a water outlet pipe is fixedly connected to the lower end of the inner wall of the third circular hole. According to the aluminum block cleaning device, firstly, the aluminum block with the oxide layer removed is placed in the cleaning bin, at the moment, water is injected into the water outlet tank through the water receiving opening, then the aluminum block is cleaned and can be placed in the storage barrel so as to be taken and used conveniently, and the effect that the aluminum block with the oxide layer removed is cleaned and then stored is achieved.

The utility model provides a sample carrier for a failure analysis sample and a preparation device of the sample carrier. The sample holder comprises a sample holder body, a rotating part and a shell. The bottom surface of the sample seat is used for fixing a sample, the rotating part comprises a stator and a rotor, the rotor is connected with the sample seat, the shell is filled with buffer liquid, and the shell is connected with the stator. And through the arrangement of the buffer liquid, when the grinding pressure is suddenly increased, the buffer liquid can absorb suddenly changed pressure, the buffer effect is achieved, and the situation of excessive layer removal is avoided. The buffer liquid comprises the elastomer capsule and the silicone oil with the preset volume ratio, so that the effective grinding pressure can be set to ensure that a certain specific layer is removed, and the removal requirements of different film layers are met. Through the arrangement of the rotating part, the sample seat is driven to rotate by utilizing the linear velocity difference generated by different distances from the axis during grinding, so that the grinding time of different positions of a sample is equal to the number of contacted grinding materials, and uniform layer removal is realized.

The utility model relates to a continuous feeding and surface treatment integrated device for a copper strip. The continuous feeding and surface treatment integrated device comprises an unwinding unit, a grinding unit and a shaping unit arranged between the unwinding unit and the grinding unit. On one hand, copper strip unwinding and feeding are carried out on the basis that the center line of a copper strip coil is kept vertical, the copper strip unwinding difficulty is greatly reduced, the risk that the copper strip is deformed and broken due to stress is reduced, and the feeding quality of the copper strip is effectively improved; on the other hand, the surface of the copper strip is kept flat by arranging the shaping channel so as to ensure that the surface of the copper strip is comprehensively and uniformly ground, the oxide layer removal rate is increased, and the product yield is increased; in addition, the structure is simple, implementation is convenient, power consumption is low, and cost is saved.

The invention provides an interlayer cleaning and auxiliary cooling device and method for additive and subtractive composite manufacturing, and relates to the technical field of electric arc additive manufacturing. The device comprises a supporting frame used for adjusting the direction and fixing the position; a multifunctional brush is arranged at the bottom of the support frame and is used for executing at least one task of cooling, oxide layer removal and cooling liquid cleaning on a formed part on the substrate; the multifunctional brush is connected with the water supply module and the air supply module; wherein the water supply module is used for providing a water source required when the multifunctional brush executes a task; the gas supply module is used for providing a gas source required when the multifunctional brush executes a task; the supporting frame, the multifunctional brush, the water supply module and the air supply module are all connected with the intelligent control module. Through the integrated design of integrated oxide layer removal, cooling liquid cleaning and rapid cooling, the defect problems of air holes, cracks and the like caused by oxide inclusion and cooling liquid residues in traditional additive and subtractive manufacturing are solved.

The application provides a method for realizing double-layer waveguide, comprising the following steps: S1: first photoetching; photoresist is coated on the surface of a hard mask layer to expose the hard mask layer, and then the exposed hard mask layer and the lower cladding layer are etched to complete the etching of the hard mask layer and the lower cladding layer; S2: second photoetching and lower cladding layer etching; the remaining photoresist is cleaned, new photoresist is coated again, the lower cladding layer is etched again by using oblique cut layer photoetching; S3: hard mask layer removal; the coated photoresist is completely cleaned, and the whole hard mask layer on the surface is removed by etching; S4: film forming; the light waveguide layer (which can be silicon nitride, porous silicon or other dielectric materials) is grown on the surface of the etched lower cladding layer; S5: polishing; the light waveguide material on the surface of the wafer is removed; and S6: upper cladding layer growth. The application realizes zero-width size of the overlapping part of the two masks by using oblique cut layer photoetching, so that the photoetching limitation is avoided.

To provide a coating layer removal method capable of achieving both suppression of breakage of a base material layer and suppression of insufficient removal of a coating layer.SOLUTION: A coating layer removal method is a method for removing a coating layer from a resin structure 1 including a base material layer made of a resin and the coating layer provided on a surface of the base material layer. This method includes a measurement step of measuring a thickness of the coating layer by detecting a boundary portion between the base material layer and the coating layer, a determination step of determining a condition of high-pressure water jetted from a nozzle based on a relationship between the thickness of the coating layer and the condition of the high-pressure water and the thickness of the coating layer measured in the measurement step, and a removal step of removing the coating layer from the resin structure by jetting the high-pressure water from the nozzle based on the condition determined in the determination step.SELECTED DRAWING: Figure 1

This invention relates to the field of printing screen technology, and provides a method for preparing grid patterns on stainless steel screens, comprising: sequentially performing degreasing cleaning, oxide layer removal, and hydrophilic treatment on the stainless steel screen to be processed to obtain a pretreated screen; coating the surface of the pretreated screen with photoresist, and performing exposure and development to obtain a screen with photoresist patterns; performing wet etching on the screen with photoresist patterns using a composite etching solution to obtain an etched screen, wherein the composite etching solution includes ferric chloride, a corrosion inhibitor, and an oxidant, and the wet etching includes first performing low-speed etching followed by high-speed etching, wherein the etching rate of the low-speed etching is lower than that of the high-speed etching; and peeling off the photoresist on the etched screen. By performing a three-step pretreatment on the stainless steel screen to be processed, combined with the use of a composite etching solution for first performing low-speed etching followed by high-speed etching, the problems of uneven etching, low etching efficiency, and severe side etching existing in the prior art are solved.

The application provides a film tearing method and device for a flexible conductive film, and the method comprises the following steps: providing a flexible conductive film to be processed, a transfer mechanism and a fixing mechanism; placing the flexible conductive film to be processed on the fixing mechanism to obtain a preliminarily positioned flexible conductive film; preliminarily separating a first film layer of a composite tape of the preliminarily positioned flexible conductive film to form an initial separation zone between the first film layer and a second film layer; performing a complete removal treatment on the first film layer of the composite tape of the preliminarily positioned flexible conductive film, and applying a positioning constraint to the second film layer to obtain a flexible conductive film from which the first film layer is removed; performing a second film layer removal treatment on the flexible conductive film from which the first film layer is removed to obtain a flexible conductive film from which the second film layer is removed; and correcting the position of a conductive substrate of the flexible conductive film from which the second film layer is removed in the fixing mechanism to obtain a flexible conductive film after film tearing. The scheme improves the efficiency and quality of flexible conductive film transfer.

The invention discloses a flexible circuit board with a layered board with an independent shape and a processing method, and the method comprises the steps: firstly removing an interlayer bonding material in a preset target region of a plurality of FPC core boards of which inner-layer circuits are manufactured so as to form a non-glue window region; laminating and subsequently manufacturing a circuit board main body; then preliminary cutting is carried out, so that each layer can be relatively scattered in the target area; then, metal isolation plates are sequentially inserted below the to-be-machined layers, laser cutting is carried out layer by layer, and all the layers form different contours in the target area; and finally removing the isolation plate to obtain a finished product. According to the manufacturing method, the limitation that a traditional multi-layer flexible circuit board can only be integrally formed and processed is broken through through a process of combining selective photoresist removal and plug-in dynamic isolation, and the flexible circuit board of which each layer has an independent appearance can be economically and reliably manufactured, so that the space utilization rate is remarkably improved, the electrical performance is optimized, and the heat dissipation is improved.

Easily polishes the edge surfaces of SiC wafers. [Solution] The method for polishing a SiC wafer 10 involves placing the plate surface 11 of the SiC wafer 10 on a stage 20, oxidizing the end face 12 of the SiC wafer 10 to form an SiO2 layer 15 on the surface of the end face 12, arranging an abrasive material 50 opposite the end face 12 of the SiC wafer 10, and rotating the SiC wafer 10 around a central axis P1 to polish and remove the SiO2 layer 15 with the abrasive material 50.

The invention discloses a machining method for removing a remelting layer of an electromachined complex molded surface, which comprises the following steps: detecting the geometric dimension and the surface roughness of an electromachined part to obtain first geometric dimension data and first roughness data; the electromachined part is subjected to metallographic analysis, the residual thickness of a remelting layer is detected, and first remelting layer thickness data is obtained; the part obtained after electromachining is assembled in an abrasive particle flow tool matched with the part obtained after electromachining; under the set abrasive material and machining parameters, abrasive particle flow machining is conducted on the electromachined part through abrasive particle flow equipment, so that a remelting layer is removed; residual grinding materials on the parts are cleaned, and the parts are cleaned; the geometric dimension and the surface roughness of the part after abrasive flow machining are detected, and second geometric dimension data and second roughness data are obtained; and carrying out metallographic analysis on the part subjected to abrasive flow machining, detecting the residual thickness of the remelting layer to obtain thickness data of a second remelting layer, and comparing and analyzing the removal effect of the remelting layer based on the thickness data of the first remelting layer and the thickness data of the second remelting layer. The invention aims to solve the problems of inconsistent remelting layer residues on the surface of a part, size out-of-tolerance risk and inconsistent visual inspection effect of appearance caused by manual clamp repair, and avoids fatigue damage caused by surface intergranular corrosion of an electromachined profile under the conditions of high temperature and high centrifugal load.

The invention relates to a surface oxide layer removing method suitable for an ultrathin invar alloy plate, a pickling process and application, and belongs to the field of metal material surface treatment. The method solves at least one of the problems that when a metal surface treatment method in the prior art is applied to an invar alloy plate, an oxide layer is not thoroughly removed, the over-corrosion risk of a base body is high, the uniformity of surface removal is poor, and the process controllability is insufficient. The invention discloses a surface oxide layer removing method suitable for an ultrathin invar alloy plate. The surface oxide layer removing method comprises the following steps that oil grinding treatment is conducted; washing after oil milling; and pickling. According to the method provided by the invention, the problem of incomplete removal of the oxide layer is solved, the overall removal efficiency is improved, the local over-corrosion risk is avoided, the surface oxide layer removal uniformity and the overall quality consistency are improved, and the process controllability is higher.

The invention relates to the technical field of micro-nano functional materials, in particular to an efficient photothermal conversion and wear-resistant super-hydrophobic coating as well as a preparation method and anti-icing and de-icing application thereof. According to the preparation method, ammonium persulfate is adopted as an oxidizing agent, pyrrole is initiated to be polymerized on the surface of a halloysite nanotube to generate polypyrrole, and the polypyrrole is added into the halloysite nanotube; thus, the polypyrrole coated halloysite nanotube composite material is obtained. The super-hydrophobic coating is mixed with low-surface-energy polydimethylsiloxane, and a coating layer formed by the obtained super-hydrophobic coating has the characteristics of high roughness and low surface energy, so that the super-hydrophobic coating shows excellent hydrophobic performance. The coating also has good photothermal effect, flexibility, elasticity, mechanical property, high temperature resistance and durability. In addition, by adding hydrophobic nano SiO2, the super-hydrophobic performance of the coating is further improved, and the hardness and wear resistance of the coating are enhanced. The finally prepared coating has excellent light absorption capacity and photo-thermal conversion efficiency, and achieves the performance of efficient protection and ice layer removal in anti-icing and deicing application.

The application discloses a high-efficiency demolding equipment and method for a mold surface carbon film layer based on a variable volume cavity, relates to the technical field of precise mold surface treatment, and proposes a volume self-adaptive cavity design and a process parameter dynamic matching strategy, realizes closed-loop control of cavity volume change-process parameter self-adaption-optimal demolding effect through setting a variable volume cavity module and a built-in specific algorithm dynamic control unit, combining dynamic matching of radio frequency, gas flow, temperature and other parameters, and realizes efficient and uniform demolding of different specifications of molds, so that the limitation of the existing vacuum plasma carbon film layer removal method is effectively solved.

A method for repairing composite material structures using an I-shaped patch design includes the following steps: Step 1: After determining the number of layers to be removed from the damaged area, the damaged area is processed into an "I-shaped" structure; Step 2: Based on the patch repair layer with the smallest diameter or area, the lower patch with a larger diameter or area is cut into N (N≥2) parts according to the process separation surface; Step 3: Under pre-compaction temperature, the splicing area between the parts of the cut patch in Step 2 is pressed under high pressure to complete the overall splicing process of the patch; Step 4: After sequentially stacking the upper patches, the structure is sealed and cured to complete the repair process. This method can improve the mechanical properties of the composite material structure after damage repair and is applicable to the repair process of laminated structures such as composite skins and sandwich composite panels.

The invention discloses a process method for preparing a photovoltaic cell, which can effectively remove a mask material. The process method comprises the following steps of: carrying out patterned mask on a metal electrode region on the back surface of a Poly rear silicon wafer; carrying out acid etching on the PSG layer in the non-mask area of the silicon wafer by adopting an acid etching mixed solution, removing the PSG layer and the poly layer in the non-mask area, and then cleaning by using overflow water; removing the mask layer of the silicon wafer by using low-concentration alkali liquor, and then rinsing with water; alkali etching is carried out on the poly layer of the non-mask area of the silicon wafer by using alkali etching mixed liquid; and carrying out subsequent treatment on the silicon wafer after alkali etching. According to the method, a step of removing the mask layer is added after the PSG layer is subjected to acid etching. The problems that the service life of an alkali etching solution is short and equipment runs abnormally when poly etching and mask layer etching are carried out in an alkali etching tank at the same time in a traditional process are effectively solved, and the productivity and the product yield are improved.

The application discloses a flexible circuit board with independent outer shape layered board and a processing method. First, interlayer adhesive material is removed in predetermined target areas of a plurality of FPC core boards with completed inner layer circuit to form glue-free window areas; then, laminating and subsequent circuit board body manufacturing are performed; then, preliminary cutting is performed to make each layer relatively spread in the target areas; then, metal isolation plates are sequentially inserted under the layers to be processed, and laser cutting is performed layer by layer to make each layer form different outer shape profiles in the target areas; finally, the isolation plates are removed to obtain finished products. Through the process of combining "selective glue removal" and "insertion type dynamic isolation", the application breaks through the limitation that traditional multi-layer flexible circuit boards can only be integrally formed and processed, and can economically and reliably manufacture flexible circuit boards with independent outer shape of each layer, thereby significantly improving space utilization, optimizing electrical performance and improving heat dissipation.

The invention discloses a multi-layer heterogeneous coating laser layering dynamic removal method and system based on spectral characteristics and a medium, and belongs to the technical field of laser cleaning, spectrograph data of different coatings in laser paint removal are collected, and a cross-coating data set is obtained through division; based on the spectrograph data of the different coatings, fitting and determining Gaussian fitting curves of characteristic elements of the different coatings so as to identify the information of the currently processed coating; training a deep learning model based on the cross-coating data set to obtain a cross-coating prediction model so as to predict early warning information about whether the currently processed coating is about to cross the coating; based on the coating information, laser processing parameters of the corresponding number of coating layers are configured; and if the early warning information that the coating is about to cross the coating is predicted, the laser processing parameters of the next layer are dynamically configured based on the early warning information, so that accurate layered removal is realized, and the damage to the substrate or the lower coating is avoided. According to the invention, real-time self-adaptive control of laser process parameters is efficiently realized, and the method has good practicability.

The invention provides a method for improving the success rate of grinding and layer removal before chip failure analysis. The method comprises the following steps: step 1, preparing a gasket; 2, slotting in the central area of the gasket according to the size of the target chip; step 3, filling the groove with glue; and step 4, after the target chip is placed in the groove, the glue is cured. According to the method and the device, the delamination flatness of the target chip can be improved, so that the efficiency and the success rate of failure analysis are improved.