621results about "Forming microstructural systems" patented technology

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

Embedded sensor structures and stretchable embedded sensor films including a plurality of embedded sensor packages are described. An embedded sensor structure may include a sensor package including an integrated circuit (IC) die and sensor die bonded to a front side of the IC die, with the sensor die including a diaphragm that is deflectable toward a cavity. A planarization layer laterally surrounds the sensor package, and metal routing is formed on a top side of the sensor die and spanning over the planarization layer. Other aspects are also described and claimed.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

A torsional micro-electro-mechanical systems (MEMS) mirror module provides for thermally-stable ancillary modes of mirror oscillation (e.g., vertical, horizontal, and rocking) by utilizing MEMS die packaging techniques that implement a cantilevered (i.e., fixed-free) die package in which one end of the die is partially fixedly-attached to a die carrier substrate while the non-attached end of the die is free from the die carrier substrate and unsupported. The cantilevered die package with fixed-free architecture effectively decouples the effects of coefficient of thermal expansion (CTE) mismatch of the MEMS die, die-bond adhesive, and die carrier substrate on temperature-dependent MEMS flexure stress. Ancillary mode oscillation frequencies changes with temperatures are thus limited to a smaller range relative to those experienced with conventional package designs.

Described are transducer assemblies and imaging devices comprising: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

A pressure sensor structure includes a sensor body including a diaphragm plate that functions as a sense electrode, a base electrode that faces the diaphragm plate, and a sidewall layer maintaining a gap between the diaphragm plate and the base electrode, and a conductive guard substrate to support the sensor body. The sidewall layer includes a guard electrode layer and upper and lower electrically insulating layers to electrically insulate the guard electrode layer. An electrically insulating layer is between the guard substrate and the sensor body to electrically insulate the guard substrate. The guard substrate is electrically connected to the guard electrode layer to function as a guard electrode together with the guard electrode layer.

A process for manufacturing a combined microelectromechanical device envisages: forming, in a sensor wafer, at least a first and a second microelectromechanical structures, at a main surface; forming, in a cap wafer, at least a first and a second cavities, at a respective main surface; forming a getter region inside the first cavity; bonding the main surfaces of the sensor and cap wafers by means of a bonding region, to define a first and a second hermetic environments for the microelectromechanical structures at different pressure values. A raised frame is formed, before the bonding step, in such a way as to be located around the first cavity; the bonding region determines the bonding of the sensor and cap wafers at the raised frame and the definition of the first hermetic environment associated with the first cavity, in a time interval prior to hermetic closure of the second cavity.

A MEMS audio device includes a first wafer having a top with a first cavity and a bottom with a vent hole coupled to the first cavity, wherein the bottom having first contacts, a second wafer disposed upon the first wafer having a flexible material layer disposed above the first cavity, a third wafer disposed upon the second wafer having physical contacts coupled to the second wafer, wherein the third wafer includes a second cavity disposed above the flexible material layer, a wiring wafer disposed below the first wafer having a second vent hole coupled to the first cavity, wherein the wiring wafer having second contacts coupled to the first contacts, and wherein the flexible material layer forms a diaphragm for the MEMS audio device.

Various embodiments of the utility model relate to a semiconductor device. The semiconductor device comprises a sensing electrode, a first dielectric layer, a second dielectric layer, an actuating diaphragm and a third dielectric layer. The sensing electrode is located above the substrate and between the plurality of isolation trenches. A plurality of portions of the first dielectric layer are on the sensing electrode. A portion of the second dielectric layer is on the sensing electrode and on the portions of the first dielectric layer. The actuating diaphragm is over the second dielectric layer, wherein the actuating diaphragm is spaced apart from the second dielectric layer by a cavity. The third dielectric layer is located on the actuating diaphragm, the third dielectric layer is located between the actuating diaphragm and the cavity, and the thickness of a part of the second dielectric layer is larger than that of the third dielectric layer.

A micro-vacuum cell comprising at least one vacuum enclosure, the vacuum enclosure comprising at least a lid of a first material, the first material having a first coefficient of thermal expansion; a base of a second material, the second material having a second coefficient of thermal expansion, where the vacuum enclosure is formed above a portion of the base; and a cold weld compression seal attaching the lid to the base along a periphery of said portion of the base; wherein one of the first and second coefficients of thermal expansion is at least five times larger than the other of the first and second coefficients of thermal expansion; and wherein the pressure in the vacuum enclosure is smaller than an atmosphere.

A MEMS device formed using back-end of line (BEOL) materials in a CMOS process, where vHF post-processing and post-backing are applied to form the MEMS device, and the MEMS device has a total dimension of 50 μm to 150 μm. The MEMS device can be implemented as an inertial sensor, among other applications.

A semiconductor device and method of forming such a device includes a MEMS component including one or more MEMS pixels and having a MEMS membrane substrate and a MEMS sidewall. The semiconductor device includes an analog circuit component bonded to the MEMS component, and which includes at least one analog CMOS component within an analog circuit insulative layer, and an analog circuit component substrate. The semiconductor device includes an HPC component bonded to the analog circuit component substrate. The HPC component includes at least one HPC metal component disposed within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the at least one bond pad and the at least one HPC metal component, and an HPC substrate. Additionally, the semiconductor device includes a DTC component bonded to the HPC substrate, and which includes a DTC die disposed in a DTC substrate.

One aspect of the present disclosure pertains to a device. The device includes a substrate, a logic circuit disposed on the substrate, and a nanoelectromechanical systems (NEMS) device electrically connected to the logic circuit and formed on the substrate. The NEMS device includes a first electrode electrically connected to the logic circuit, a second electrode electrically connected to a first power supply, a movable feature electrically connected to the second electrode, and a control electrode operable to move the movable feature relative to the first electrode.

A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.

The invention relates to the field of semiconductor MEMS (Micro Electro Mechanical System) devices, and discloses a medium-high-entropy alloy air suction target material which is composed of a main element A, an element C and an element B. The content of the main element A is 25-40 at%, the content of the element B is 30-45 at%, and the content of the element C is 30-45 at%; the formula equation is as follows: A < 25-40 > B < 30-45 > C < 30-45 >; the main element A is selected from one or two of V and Co; the element C is selected from one or more of Fe, Pr, Y, Gd, Nd, Er, Sm and Ce. And the element B is selected from one or two of Ti and Zr. According to the invention, the problem of serious contradiction between the air suction performance and the mechanical property of the current semiconductor MEMS sensor packaging material is solved by utilizing the advantages of rich or multi-principal-element alloy, high mixing entropy and the like in the medium-high-entropy alloy.

A process for manufacturing microelectromechanical devices includes forming a dielectric layer and a structural layer on a substrate of a first semiconductor wafer and forming a first and a second microelectromechanical device in the structural layer. The first and second microelectromechanical devices are sealed respectively in a first chamber and in a second chamber at a first pressure. The first chamber is fluidically coupled to an external environment through the substrate and sealed at a second pressure different from the first pressure. To fluidically couple the first chamber to the outside, there are formed a stop layer between the dielectric layer and the structural layer and a cavity fluidically coupled to the first chamber in the dielectric layer. A channel is formed by etching the substrate in a position corresponding to the cavity and the stop layer, and the etching of the substrate is ended against the stop layer.

To prevent a bonding target from being damaged in a bonding technique using laser beams.SOLUTION: A bonding device is configured to bond a first bonding target and a second bonding target using laser beams and comprises a first stage, a pressurization mechanism, a second stage and a laser beam source. The first stage is a stage having transmissivity with respect to laser beams and is positioned at a back face side of the first bonding target. The pressurization mechanism is a mechanism for applying a pressure to a back face of the first bonding target. The second stage includes a pressure receiving plane where the pressure of the pressurization mechanism is received at a back face side of the second bonding target. The laser beam source irradiates a bonding location of the first bonding target and the second bonding target with laser beams via the first stage. The pressurization mechanism is a mechanism of which a transmission medium of the pressure consists of a gas or a liquid, and applies the pressure to the back face of the first bonding target in a state where the transmission medium is in contact with the back face.SELECTED DRAWING: Figure 3

Encapsulated MEMS devices and methods of fabrication with wafer-level fabrication processes are described which address small molecule diffusion into hermetically sealed cavities. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed during a back-end-of-the-line (BEOL) processing over a cap wafer including a planarized surface formed during a via reveal griding operation. In some configurations a small molecule barrier layer is not formed over the planarized surface during BEOL processing in order to allow an escape path for small molecules. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed on a bottom side of a cap wafer prior to bonding the cap wafer to a device wafer during wafer-level fabrication.

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

Disclosed an inertial sensor packaging method and an inertial sensor, the inertial sensor packaging method comprises: steps: breaking the Si—O bond of at least one of the first dielectric part in the first bonding surface in the MEMS wafer and the second dielectric part in the second bonding surface in the cover wafer; aligning the first bonding surface with the second bonding surface and attaching thereof together, so that the first dielectric part and the second dielectric part are pre-bonded through a dangling bond to obtain a pre-bonded wafer; performing heat treatment on the pre-bonded wafer to achieve permanent bonding between the first dielectric part and the second dielectric part, as well as between the first metal part and the second metal part.

Methods and systems for improving fusion bonding are disclosed. Plasma treatment is performed on a substrate prior to the fusion bonding, which leaves residual charge on the substrate to be fusion bonded. The residual charge is usually dissipated through an electrically conductive silicone cushion on a loading pin. In the methods, the amount of residual voltage on a test silicon wafer is measured. If the residual voltage is too high, this indicates the usable lifetime of the silicone cushion has passed, and the electrically conductive silicone cushion is replaced. This ensures the continued dissipation of residual charge during use in production, improving the quality of fusion bonds between substrates.

A microelectromechanical membrane sensor includes: a supporting body, containing semiconductor material and having a recess in a face; a platform, housed in the recess at a distance from the supporting body; a flexure, connecting the platform to the supporting body and configured to keep the platform suspended in the recess. A gap extends between the supporting body, the platform and the flexure. A membrane is housed in the platform and delimits a buried cavity incorporated in the platform. A sealing strip extends on the supporting body, on the platform and on the flexure along the gap.

The invention relates to a MEMS component having a MEMS element with a chamber, the chamber being at least partially delimited by an ASIC component, the ASIC component having a plurality of conductor track layers which lie one above the other in the y-direction between a cover layer and a bottom layer, the conductor track layers being connected to circuit elements of the ASIC component and / or sensor elements and / or actuator elements of the MEMS element, the ASIC component is adjacent to the chamber via the cover layer, the conductor track layers comprise at least one first conductor track layer and at least one second conductor track layer, the first conductor track layer is arranged between the second conductor track layer and the cover layer, the first conductor track layer comprises at least one first conductor track, and the second conductor track layer comprises at least one second conductor track. The first conductor path has a layer stack consisting of an aluminum layer and a titanium layer arranged one above the other in the y-direction, the titanium layer being arranged between the second conductor path layer and the aluminum layer, the titanium layer having a thickness in the y-direction greater than 40 nm, the second conductor path layer having a copper-containing second conductor path, the thickness of the titanium layer being greater than 40 nm, and the thickness of the aluminum layer being greater than 40 nm. The titanium layer is provided as a getter layer for bonding hydrogen, the hydrogen being releasable from the copper layer of the second conductor track, in particular from the stack of copper-based conductor track layers, and the titanium layer reducing or preventing the entry of the released hydrogen into the chamber.

A semiconductor device (100) comprising: an interconnect structure (114) disposed over a semiconductor substrate (104); a dielectric structure (130) disposed over the interconnect structure (114); a plurality of cavities (148) disposed in the dielectric structure (130) and arranged in an array (502) having rows (504) and columns (506); a MEMS substrate (136) disposed over the dielectric structure (130), the MEMS substrate (136) defining upper surfaces of the cavities (148), the MEMS substrate (136) comprising a plurality of movable membranes (150), the movable membranes (150) overlying the respective cavity (148); and a plurality of flow connection channels (152) arranged in the dielectric structure (130), wherein the upper surfaces of the flow connection channels (152) are defined by the MEMS substrate (136),and wherein each of the flow connection channels (152) extends laterally between two adjacent cavities (148) of the cavities (148) such that all cavities (148) are in flow communication with one another, wherein the semiconductor device (100) comprises a buffer tank (1002) arranged in the dielectric structure (130) and arranged vertically between the semiconductor substrate (104) and the MEMS substrate (136), wherein the dielectric structure (130) at least partially defines side walls of the buffer tank (1004), wherein the semiconductor device (100) comprises a buffer tank channel (1004) extending laterally from the buffer tank (1004) to one of the cavities (146), wherein the semiconductor device (100) comprises a sealing structure (1006) extending vertically through the MEMS substrate (136) and into the buffer tank channel (1004), wherein the Sealing structure (1006) seals the buffer tank (1002) against the cavity (148),so that the buffer tank (1002) is not in flow connection with the cavity (148).,