439results about "Forming microstructural systems" patented technology

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

Embedded sensor structures and stretchable embedded sensor films including a plurality of embedded sensor packages are described. An embedded sensor structure may include a sensor package including an integrated circuit (IC) die and sensor die bonded to a front side of the IC die, with the sensor die including a diaphragm that is deflectable toward a cavity. A planarization layer laterally surrounds the sensor package, and metal routing is formed on a top side of the sensor die and spanning over the planarization layer. Other aspects are also described and claimed.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

A MEMS audio device includes a first wafer having a top with a first cavity and a bottom with a vent hole coupled to the first cavity, wherein the bottom having first contacts, a second wafer disposed upon the first wafer having a flexible material layer disposed above the first cavity, a third wafer disposed upon the second wafer having physical contacts coupled to the second wafer, wherein the third wafer includes a second cavity disposed above the flexible material layer, a wiring wafer disposed below the first wafer having a second vent hole coupled to the first cavity, wherein the wiring wafer having second contacts coupled to the first contacts, and wherein the flexible material layer forms a diaphragm for the MEMS audio device.

A micro-vacuum cell comprising at least one vacuum enclosure, the vacuum enclosure comprising at least a lid of a first material, the first material having a first coefficient of thermal expansion; a base of a second material, the second material having a second coefficient of thermal expansion, where the vacuum enclosure is formed above a portion of the base; and a cold weld compression seal attaching the lid to the base along a periphery of said portion of the base; wherein one of the first and second coefficients of thermal expansion is at least five times larger than the other of the first and second coefficients of thermal expansion; and wherein the pressure in the vacuum enclosure is smaller than an atmosphere.

One aspect of the present disclosure pertains to a device. The device includes a substrate, a logic circuit disposed on the substrate, and a nanoelectromechanical systems (NEMS) device electrically connected to the logic circuit and formed on the substrate. The NEMS device includes a first electrode electrically connected to the logic circuit, a second electrode electrically connected to a first power supply, a movable feature electrically connected to the second electrode, and a control electrode operable to move the movable feature relative to the first electrode.

A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.

The invention relates to the field of semiconductor MEMS (Micro Electro Mechanical System) devices, and discloses a medium-high-entropy alloy air suction target material which is composed of a main element A, an element C and an element B. The content of the main element A is 25-40 at%, the content of the element B is 30-45 at%, and the content of the element C is 30-45 at%; the formula equation is as follows: A < 25-40 > B < 30-45 > C < 30-45 >; the main element A is selected from one or two of V and Co; the element C is selected from one or more of Fe, Pr, Y, Gd, Nd, Er, Sm and Ce. And the element B is selected from one or two of Ti and Zr. According to the invention, the problem of serious contradiction between the air suction performance and the mechanical property of the current semiconductor MEMS sensor packaging material is solved by utilizing the advantages of rich or multi-principal-element alloy, high mixing entropy and the like in the medium-high-entropy alloy.

Encapsulated MEMS devices and methods of fabrication with wafer-level fabrication processes are described which address small molecule diffusion into hermetically sealed cavities. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed during a back-end-of-the-line (BEOL) processing over a cap wafer including a planarized surface formed during a via reveal griding operation. In some configurations a small molecule barrier layer is not formed over the planarized surface during BEOL processing in order to allow an escape path for small molecules. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed on a bottom side of a cap wafer prior to bonding the cap wafer to a device wafer during wafer-level fabrication.

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

Disclosed an inertial sensor packaging method and an inertial sensor, the inertial sensor packaging method comprises: steps: breaking the Si—O bond of at least one of the first dielectric part in the first bonding surface in the MEMS wafer and the second dielectric part in the second bonding surface in the cover wafer; aligning the first bonding surface with the second bonding surface and attaching thereof together, so that the first dielectric part and the second dielectric part are pre-bonded through a dangling bond to obtain a pre-bonded wafer; performing heat treatment on the pre-bonded wafer to achieve permanent bonding between the first dielectric part and the second dielectric part, as well as between the first metal part and the second metal part.

The invention relates to a MEMS component having a MEMS element with a chamber, the chamber being at least partially delimited by an ASIC component, the ASIC component having a plurality of conductor track layers which lie one above the other in the y-direction between a cover layer and a bottom layer, the conductor track layers being connected to circuit elements of the ASIC component and / or sensor elements and / or actuator elements of the MEMS element, the ASIC component is adjacent to the chamber via the cover layer, the conductor track layers comprise at least one first conductor track layer and at least one second conductor track layer, the first conductor track layer is arranged between the second conductor track layer and the cover layer, the first conductor track layer comprises at least one first conductor track, and the second conductor track layer comprises at least one second conductor track. The first conductor path has a layer stack consisting of an aluminum layer and a titanium layer arranged one above the other in the y-direction, the titanium layer being arranged between the second conductor path layer and the aluminum layer, the titanium layer having a thickness in the y-direction greater than 40 nm, the second conductor path layer having a copper-containing second conductor path, the thickness of the titanium layer being greater than 40 nm, and the thickness of the aluminum layer being greater than 40 nm. The titanium layer is provided as a getter layer for bonding hydrogen, the hydrogen being releasable from the copper layer of the second conductor track, in particular from the stack of copper-based conductor track layers, and the titanium layer reducing or preventing the entry of the released hydrogen into the chamber.

A semiconductor device (100) comprising: an interconnect structure (114) disposed over a semiconductor substrate (104); a dielectric structure (130) disposed over the interconnect structure (114); a plurality of cavities (148) disposed in the dielectric structure (130) and arranged in an array (502) having rows (504) and columns (506); a MEMS substrate (136) disposed over the dielectric structure (130), the MEMS substrate (136) defining upper surfaces of the cavities (148), the MEMS substrate (136) comprising a plurality of movable membranes (150), the movable membranes (150) overlying the respective cavity (148); and a plurality of flow connection channels (152) arranged in the dielectric structure (130), wherein the upper surfaces of the flow connection channels (152) are defined by the MEMS substrate (136),and wherein each of the flow connection channels (152) extends laterally between two adjacent cavities (148) of the cavities (148) such that all cavities (148) are in flow communication with one another, wherein the semiconductor device (100) comprises a buffer tank (1002) arranged in the dielectric structure (130) and arranged vertically between the semiconductor substrate (104) and the MEMS substrate (136), wherein the dielectric structure (130) at least partially defines side walls of the buffer tank (1004), wherein the semiconductor device (100) comprises a buffer tank channel (1004) extending laterally from the buffer tank (1004) to one of the cavities (146), wherein the semiconductor device (100) comprises a sealing structure (1006) extending vertically through the MEMS substrate (136) and into the buffer tank channel (1004), wherein the Sealing structure (1006) seals the buffer tank (1002) against the cavity (148),so that the buffer tank (1002) is not in flow connection with the cavity (148).,

A MEMS component with a substrate and a first covering, wherein an interior space is formed between the substrate and the first covering, wherein a MEMS element is arranged in the interior space, wherein the MEMS element is designed to interact with a fluid, wherein the first covering is fixedly connected to the substrate, wherein a thermally insulating second covering is provided between the MEMS element and the first covering, wherein the second covering is fastened to the first covering in a frictionally engaging and / or interlocking manner, wherein there is at least partially an air space between the first covering and the second covering.

An inertial sensor and a method therefor. The inertial sensor includes: a first substrate; a medium layer stacked on the first substrate; a first electric-conductive layer stacked on the medium layer, first openings being formed in the first electric-conductive layer and spaced from one another; second electric-conductive layers being bonded to the first electric-conductive layer through bonding structures, a gap being formed between adjacent second electric-conductive layers, which are connected to each other by a connection part, and second openings being formed in each of the second electric-conductive layers and spaced from one another; and a second substrate covering the first substrate, a closed space being formed between the second substrate and the first substrate. Compared with a traditional single-layer structure, the die size is reduced, the manufacturing cost is reduced, and the integration of device into portable consumer applications is improved, and XY axis sensitivity is improved.

The invention relates to a method for producing a MEMS mirror array (100) such as can be used e.g. in photolithography, and to a MEMS mirror array (100) produced in accordance with this method. The method is distinguished in particular by the fact that before or after at least one of the production steps provided according to the invention, at least regions of the component part forming the later MEMS mirror array (100) are provided with a protective layer (400) for protecting the underlying material against environmental influences, in particular against hydrogen-induced outgassing.

Method for manufacturing a micro-electro-mechanical system, MEMS, integrating a first MEMS device and a second MEMS device. The first MEMS device is a capacitive pressure sensor and the second MEMS device is an inertial sensor. The steps of manufacturing the first and second MEMS devices are, at least partly, shared with each other, resulting in a high degree of integration on a single die, and allowing to implement a manufacturing process with high yield and controlled costs.

The present disclosure concerns a MEMS pressure transducer Wafer-Level Chip-Scale Package (100) and a method for manufacturing the same. The method comprises a step of providing a MEMS wafer (110) comprising a plurality of adjacently arranged MEMS membrane structures (120). The method comprises a further step of providing an ASIC wafer (210) comprising a plurality of adjacently arranged integrated electronic components (220), and bonding the MEMS wafer (110) with the ASIC wafer (210) with their respective front sides (111, 211) facing each other. The method comprises a further step of structuring at least one first cavity (150) into MEMS wafer (110) and structuring a smaller second cavity (160) into the first cavity (150).

A mirror array comprising a movable mirror is described. The movable mirror including a stationary frame including a cavity and a movable frame in the cavity. The movable frame is suspended from the stationary frame by a first stationary frame flexure and a second stationary frame flexure. The movable mirror further includes a central stage in the cavity. The mirror array further comprises a lid wafer covering the movable mirror and a first protrusion on the lid wafer, wherein the first protrusion extends towards the movable mirror.

A micromechanical component for a sound transducer device. The micromechanical component includes a substrate, a diaphragm, at least one piezoelectric element, and at least one electrical contact connection. The diaphragm can vibrate and is connected to the substrate. The at least one piezoelectric element is disposed between the diaphragm and the substrate and is connected to the diaphragm. The at least one piezoelectric element is designed to produce and / or detect vibrations of the diaphragm in the ultrasonic range. The at least one electrical contact connection is electrically connected to the at least one piezoelectric element. The micromechanical component can be connected, using flip chip technology, to a control circuit such that the at least one piezoelectric element can be electrically connected to the control circuit by means of the at least one electrical contact connection.

A MEMS device that includes: a first cover; a second cover defining a space between the second cover and the first cover; a first substrate opposite to the first cover in the space between the second cover and the first cover, the first substrate comprising single-crystal silicon; a second substrate opposite to the second cover in the space between the second cover and the first cover, the second substrate comprising single-crystal silicon, the second substrate including a movable portion, the single-crystal silicon of the second substrate being joined to the single-crystal silicon of the first substrate; and an electrostatic capacity portion between at least one of (1) the second cover and the second substrate or (2) the first substrate and the second substrate, the electrostatic capacity portion being configured such that electrostatic capacity changes depending on a distance between the movable portion and the second cover or the first substrate.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Micromechanical sensor device with: an ASIC substrate (10) with a first front side (VSa) and a first back side (RSa); a rewiring device (20) formed on the first front side (VSa) with a plurality of stacked conductor track levels (LB0, LB1) and insulation layers (I); a MEMS substrate (9) with a second front (VS) and a second back (RS); a first micromechanical functional layer (16) formed above the second front surface (VS); a second micromechanical functional layer (17) formed above the first micromechanical functional layer (16), which is connected to the rewiring device (20) via a bond connection (50); wherein a movable sensor structure (MS) is formed in the second micromechanical functional layer (17) which is anchored on one side to the MEMS substrate (9) via a first anchoring area (17b') formed in the second micromechanical functional layer (17); wherein in the second micromechanical functional layer (17) an electrical connection element formed in a second anchoring area (17d; 17d'; 17d'') is anchored on one side via a contact area (52) of the bond connection (50) on the ASIC substrate (10); and wherein the first anchoring area (17b') and the second anchoring area (17d; 17d'; 17d'') are elastically connected to each other via a spring element (17c) formed in the second micromechanical functional layer (17).

A method for forming a MEMS structure for an inertial sensor from fused silica comprises depositing a conductive layer (401) on one or more selected regions of a first surface of a fused silica substrate (400), and illuminating areas of the fused silica substrate (400) with laser radiation in a pattern defining features of the MEMS structure for an inertial sensor. A masking layer (404) is deposited at least on the one or more selected regions of the first surface of the fused silica substrate (400) where the conductive layer (401) has been deposited, such that the illuminated areas of the fused silica substrate (400) remain exposed. A first etch of the exposed areas of the fused silica substrate (400) is performed so as to selectively etch the pattern defining features (415) of the MEMS structure for an inertial sensor.

A method (100) for producing an electrode structure (206) for an ion trap, comprising the following steps: providing (110) a base substrate (202) having a structured metallization arrangement (230) arranged in an insulating material (220) on a semiconductor layer (210); providing (120) an insulating substrate (250) having a dielectric material (252); bonding (130) a surface region (224) of the base substrate (202) arranged on the insulating material (220) to the insulating substrate (250) by means of a bonding process; and thinning (140) the base substrate (202) by removing the semiconductor layer (210) down to the insulating material (220) of the base substrate (202), wherein the electrode structure (206) is provided for the ion trap is formed by carrying out the step of back thinning to the metallization arrangement (230),or by applying a structured surface metallization (240) to the insulating material (220) of the re-thinned base substrate (202) or wherein the electrode structure (206) for the ion trap is formed by the structured metallization arrangement (230).

Systems and methods for a MEMS microphone package are disclosed. The MEMS microphone package may include a first port to direct sound to a MEMS system, including a die substrate, an acoustic membrane, and one or more plates. The MEMS microphone package may include an ASIC to produce microphone output based on an electrical signal, a PCB, a lid, and a second port. The first port and the second port may define a front volume and a back volume respectively. The second port may increase the back volume to improve sensitivity and reduce the acoustic sensor's noise floor to improve signal-to-noise ratio.