236results about "Forming microstructural systems" patented technology

A MEMS audio device includes a first wafer having a top with a first cavity and a bottom with a vent hole coupled to the first cavity, wherein the bottom having first contacts, a second wafer disposed upon the first wafer having a flexible material layer disposed above the first cavity, a third wafer disposed upon the second wafer having physical contacts coupled to the second wafer, wherein the third wafer includes a second cavity disposed above the flexible material layer, a wiring wafer disposed below the first wafer having a second vent hole coupled to the first cavity, wherein the wiring wafer having second contacts coupled to the first contacts, and wherein the flexible material layer forms a diaphragm for the MEMS audio device.

A micro-vacuum cell comprising at least one vacuum enclosure, the vacuum enclosure comprising at least a lid of a first material, the first material having a first coefficient of thermal expansion; a base of a second material, the second material having a second coefficient of thermal expansion, where the vacuum enclosure is formed above a portion of the base; and a cold weld compression seal attaching the lid to the base along a periphery of said portion of the base; wherein one of the first and second coefficients of thermal expansion is at least five times larger than the other of the first and second coefficients of thermal expansion; and wherein the pressure in the vacuum enclosure is smaller than an atmosphere.

The invention relates to a MEMS component having a MEMS element with a chamber, the chamber being at least partially delimited by an ASIC component, the ASIC component having a plurality of conductor track layers which lie one above the other in the y-direction between a cover layer and a bottom layer, the conductor track layers being connected to circuit elements of the ASIC component and / or sensor elements and / or actuator elements of the MEMS element, the ASIC component is adjacent to the chamber via the cover layer, the conductor track layers comprise at least one first conductor track layer and at least one second conductor track layer, the first conductor track layer is arranged between the second conductor track layer and the cover layer, the first conductor track layer comprises at least one first conductor track, and the second conductor track layer comprises at least one second conductor track. The first conductor path has a layer stack consisting of an aluminum layer and a titanium layer arranged one above the other in the y-direction, the titanium layer being arranged between the second conductor path layer and the aluminum layer, the titanium layer having a thickness in the y-direction greater than 40 nm, the second conductor path layer having a copper-containing second conductor path, the thickness of the titanium layer being greater than 40 nm, and the thickness of the aluminum layer being greater than 40 nm. The titanium layer is provided as a getter layer for bonding hydrogen, the hydrogen being releasable from the copper layer of the second conductor track, in particular from the stack of copper-based conductor track layers, and the titanium layer reducing or preventing the entry of the released hydrogen into the chamber.

An inertial sensor and a method therefor. The inertial sensor includes: a first substrate; a medium layer stacked on the first substrate; a first electric-conductive layer stacked on the medium layer, first openings being formed in the first electric-conductive layer and spaced from one another; second electric-conductive layers being bonded to the first electric-conductive layer through bonding structures, a gap being formed between adjacent second electric-conductive layers, which are connected to each other by a connection part, and second openings being formed in each of the second electric-conductive layers and spaced from one another; and a second substrate covering the first substrate, a closed space being formed between the second substrate and the first substrate. Compared with a traditional single-layer structure, the die size is reduced, the manufacturing cost is reduced, and the integration of device into portable consumer applications is improved, and XY axis sensitivity is improved.

The invention relates to a method for producing a MEMS mirror array (100) such as can be used e.g. in photolithography, and to a MEMS mirror array (100) produced in accordance with this method. The method is distinguished in particular by the fact that before or after at least one of the production steps provided according to the invention, at least regions of the component part forming the later MEMS mirror array (100) are provided with a protective layer (400) for protecting the underlying material against environmental influences, in particular against hydrogen-induced outgassing.

Method for manufacturing a micro-electro-mechanical system, MEMS, integrating a first MEMS device and a second MEMS device. The first MEMS device is a capacitive pressure sensor and the second MEMS device is an inertial sensor. The steps of manufacturing the first and second MEMS devices are, at least partly, shared with each other, resulting in a high degree of integration on a single die, and allowing to implement a manufacturing process with high yield and controlled costs.

The present disclosure concerns a MEMS pressure transducer Wafer-Level Chip-Scale Package (100) and a method for manufacturing the same. The method comprises a step of providing a MEMS wafer (110) comprising a plurality of adjacently arranged MEMS membrane structures (120). The method comprises a further step of providing an ASIC wafer (210) comprising a plurality of adjacently arranged integrated electronic components (220), and bonding the MEMS wafer (110) with the ASIC wafer (210) with their respective front sides (111, 211) facing each other. The method comprises a further step of structuring at least one first cavity (150) into MEMS wafer (110) and structuring a smaller second cavity (160) into the first cavity (150).

A mirror array comprising a movable mirror is described. The movable mirror including a stationary frame including a cavity and a movable frame in the cavity. The movable frame is suspended from the stationary frame by a first stationary frame flexure and a second stationary frame flexure. The movable mirror further includes a central stage in the cavity. The mirror array further comprises a lid wafer covering the movable mirror and a first protrusion on the lid wafer, wherein the first protrusion extends towards the movable mirror.

A micromechanical component for a sound transducer device. The micromechanical component includes a substrate, a diaphragm, at least one piezoelectric element, and at least one electrical contact connection. The diaphragm can vibrate and is connected to the substrate. The at least one piezoelectric element is disposed between the diaphragm and the substrate and is connected to the diaphragm. The at least one piezoelectric element is designed to produce and / or detect vibrations of the diaphragm in the ultrasonic range. The at least one electrical contact connection is electrically connected to the at least one piezoelectric element. The micromechanical component can be connected, using flip chip technology, to a control circuit such that the at least one piezoelectric element can be electrically connected to the control circuit by means of the at least one electrical contact connection.

A MEMS device that includes: a first cover; a second cover defining a space between the second cover and the first cover; a first substrate opposite to the first cover in the space between the second cover and the first cover, the first substrate comprising single-crystal silicon; a second substrate opposite to the second cover in the space between the second cover and the first cover, the second substrate comprising single-crystal silicon, the second substrate including a movable portion, the single-crystal silicon of the second substrate being joined to the single-crystal silicon of the first substrate; and an electrostatic capacity portion between at least one of (1) the second cover and the second substrate or (2) the first substrate and the second substrate, the electrostatic capacity portion being configured such that electrostatic capacity changes depending on a distance between the movable portion and the second cover or the first substrate.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Micromechanical sensor device with: an ASIC substrate (10) with a first front side (VSa) and a first back side (RSa); a rewiring device (20) formed on the first front side (VSa) with a plurality of stacked conductor track levels (LB0, LB1) and insulation layers (I); a MEMS substrate (9) with a second front (VS) and a second back (RS); a first micromechanical functional layer (16) formed above the second front surface (VS); a second micromechanical functional layer (17) formed above the first micromechanical functional layer (16), which is connected to the rewiring device (20) via a bond connection (50); wherein a movable sensor structure (MS) is formed in the second micromechanical functional layer (17) which is anchored on one side to the MEMS substrate (9) via a first anchoring area (17b') formed in the second micromechanical functional layer (17); wherein in the second micromechanical functional layer (17) an electrical connection element formed in a second anchoring area (17d; 17d'; 17d'') is anchored on one side via a contact area (52) of the bond connection (50) on the ASIC substrate (10); and wherein the first anchoring area (17b') and the second anchoring area (17d; 17d'; 17d'') are elastically connected to each other via a spring element (17c) formed in the second micromechanical functional layer (17).

The present invention relates to a method for welding substrates, the method comprising: bringing a first substrate and a second substrate into contact with each other such that a contact area is formed between the two substrates; introducing at least two outer weld lines into the first and second substrates, the outer weld lines extending adjacent to each other within the contact area, such that the first and second substrates are welded together by each of the outer weld lines and a dicing area is defined between the two outer weld lines; and introducing one or more inner weld lines into at least one of the two substrates, the inner weld lines extending between the two outer weld lines within the dicing area. The present invention further relates to the welded substrates and the singulated chips, particularly hermetically sealed enclosures.

The invention relates to a method for producing at least one first (205) and second micromirror device (206). Here, a silicon wafer (100), in particular plate-shaped, having a front side (110) and a back side (120) is provided. Then, a silicon oxide layer (130) is applied to at least the front side (110) of the silicon wafer (100, 101). Subsequently, the silicon oxide layer (130) is removed such that at least one first separation region (131) and at least one second separation region (132) of the silicon oxide layer (130) are produced, wherein the first (131) and second separation region (132) of the silicon oxide layer (130) are arranged spatially separated from one another along a separation plane (140). Then, a silicon layer (150) is applied to the front side (110) of the silicon wafer (101) and the silicon oxide layer (130). Subsequently, an etching mask (180) is applied (70) to the back side (120) of the silicon wafer (100), wherein the etching mask (180) has a first opening (190) along the separation plane (140) of the first (131) and second separation region (132) of the silicon oxide layer (130). Subsequently, the silicon layer (150, 350) and the silicon wafer (100, 101) are removed (80) by means of an etching method in accordance with the etching mask (180) on the back side (120) of the silicon wafer (100, 101) and in accordance with the silicon oxide layer (130) of the silicon wafer (100), in particular the first (131) and second separation region (132) of the silicon oxide layer (130), such that at least one first (205) and second micromirror device (206) are produced.

A wafer-level packaging structure, comprising a device wafer (10), a plurality of reference device regions (20), and a thickened intermediate layer wafer (30). The reference device regions (20) are arranged on the device wafer (10) and are configured to provide reference devices (21); the thickened intermediate layer wafer (30) is arranged on the device wafer (10) and comprises first sub-portions (31) and second sub-portions (32) which are connected to each other, each first sub-portion (31) being arranged around a reference device (21); one reference device region (20) is arranged in the area enclosed by a first sub-portion (31), and the orthographic projection of each second sub-portion (32) on the device wafer (10) covers a reference device region (20); in the direction away from the device wafer (10), the surface of each second sub-portion (32) away from a first sub-portion (31) is inclined towards the side close to the first sub-portion (31). The wafer-level packaging structure can improve the signal transmission precision of wafer-level sensors. Further provided are a sensor and a manufacturing method for the wafer-level packaging structure.

A method for producing a first and second micromirror device. A silicon oxide layer is applied to at least the front side of a silicon wafer. The silicon oxide layer is removed so that a first and second separation region of the silicon oxide layer are generated, which are arranged spatially separated from each other along a separation plane. A silicon layer is applied to the front side of the silicon wafer and to the silicon oxide layer. An etching mask is applied to the rear side of the silicon wafer, the etching mask having a first opening along the separation plane of the first and second separation region. The silicon layer and the silicon wafer are removed, according to the etching mask on the rear side of the silicon wafer and according to the silicon oxide layer of the first and second separation region.

A method includes forming a microelectromechanical system (MEMS) device wherein the MEMS device includes a cavity and one or more release holes extending from a surface of the MEMS device to the cavity, and sealing at least a portion of the MEMS device including the one or more release holes with a film utilizing a physical vapor deposition (PVD) process.

An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.

An inertial measurement unit and a manufacturing method therefor. The inertial measurement unit comprises: a first substrate (1); a dielectric layer (2), wherein the dielectric layer (2) is stacked on the first substrate (1), and notches (15) are formed on the dielectric layer (2); a first conductive layer (3), wherein the first conductive layer (3) is stacked on the dielectric layer (2); a second conductive layer (5), wherein the second conductive layer (5) is supported on the first conductive layer (3) by means of support portions (7); a second substrate (9), wherein the second substrate (9) covers the second conductive layer (5) by means of a bonding structure (8), a sealed space is formed between the second substrate (9) and the first substrate (1), the sealed space comprises a plurality of separated chambers (14), and the chambers (14) have different chamber pressures; an exhaust channel (12), communicated with at least one chamber (14), wherein the exhaust channel (12) is used for communicating the chamber (14) with the outside; and a sealing portion, used for sealing the exhaust channel (12). A plurality of chambers (14) having different chamber pressures are provided on a single wafer, which is conducive to manufacturing of an inertial measurement unit in which two or more inertial sensors are integrated.

An electronic device has a molded package (e.g., a quad flat no leads package) with attached connectors. The molded package includes one or more semiconductor dies and is pretested prior to attachment of the connectors. Along these lines, such molded packages may be pretested in parallel at high volume due to their relatively small form factor (e.g., at numbers several times greater than those for testing leaded socket assemblies). Following such pretesting, the connectors are attached to the pretested molded package (e.g., by directly fusing the connectors to metallic pads on surfaces of the packaged integrated circuit via laser welding or soldering). Such electronic devices may be further tested if desired (e.g., opens / shorts tested) and encased within housings to form larger modules (e.g., accelerometers, pressure sensors, etc.).

A first and second substrate (24,25) are bonded to each other to form a 3D assembly of micro-electronic components. Both substrates comprise a plurality of first cavities (17) open to the respective bonding surfaces (30) and at least one substrate comprises a second cavity (10) that is larger than the first cavities in terms of its in-plane dimensions, and possibly also in terms of its depth. Prior to bonding, an electrically conductive layer (16) is produced conformally on each substrate. Said layer is patterned in the large cavity or cavities (10) and in said large cavity or cavities a micro-electronic device or a portion thereof (11) is fabricated. Thereafter, the bonding surfaces are planarized, removing the conformal layer (16) from said bonding surfaces (30), after which the substrates are bonded to form the assembly, wherein the first cavities of both substrates are brought into mutual contact to form an electrical connection. Possibly, the first cavities (17) may be filled with a contact material (33) prior to the planarization step. Any device in the large cavities may be contacted through suitable connection means such as TSV connections (4,5) or back end of line interconnect levels.

A production method for a micromechanical component for a sensor device or microphone device. The method includes: forming a supporting structure composed of a first sacrificial material on a substrate surface of a substrate with a first sacrificial material layer, a plurality of etching holes structured through the first sacrificial material layer, and a plurality of supporting posts projecting into the substrate; etching into the substrate surface at least one cavity spanned by the supporting structure; forming a diaphragm composed of at least one semiconductor material on or over the first sacrificial material layer of the supporting structure; depositing a layer stack comprising at least one sacrificial layer and at least one counter electrode; and exposing the diaphragm by at least partially removing at least the supporting structure and the at least one sacrificial layer.

A method of manufacturing a component having a microfluidic structure, comprising embossing recesses in an embossed lacquer layer, partially curing the embossed lacquer layer, sealing the recesses with a curable bonding lacquer layer, and curing the partially cured embossing lacquer layer and the bonding lacquer layer, as well as a component obtainable by the method and the use of the component.

Preferably, the present invention relates to a MEMS package having at least one layer for protecting a MEMS element, the MEMS element having at least one MEMS interaction region on a substrate, and a dielectric layer for conformal surface coating of the MEMS element. Particularly preferably, the present invention relates to a MEMS transducer package, for example, in which a MEMS element having a MEMS membrane and a processor, preferably an integrated circuit, are present on a substrate. For protection, a dielectric surface conformal coating is preferably first applied to the MEMS element, for example, by spray coating, mist coating, and / or vapor coating. Then, preferably, a conductive layer is applied. Depending on the configuration, layers can be removed in some areas above the MEMS interaction region of the MEMS element, for example, for acoustic ports in the MEMS membrane.

The invention relates to an enclosure for encapsulating a functional region from the surrounding area, wherein the enclosure comprises a base substrate and a cover substrate, and the base substrate together with the cover substrate forms at least one part of the enclosure or the enclosure. The invention additionally relates to the at least one functional region arranged in the enclosure and to a locking device for reducing permeation between the enclosure and the functional region. The enclosure can have at least one laser bonding line, and the substrates of the enclosure can be joined together in a hermetically sealed manner by means of the at least one laser bonding line. The laser bonding line has a height (HL) perpendicular to the connection plane thereof.

The present disclosure relates to a MEMS pressure transducer Wafer-Level Chip-Scale Package and a method for manufacturing the same. The method comprises a step of providing a MEMS wafer comprising adjacently arranged MEMS membrane structures. The method comprises a further step of providing an ASIC wafer comprising adjacently arranged integrated electronic components, and bonding the MEMS wafer with the ASIC wafer with their respective front sides facing each other. The method comprises a further step of structuring at least one first cavity into MEMS wafer and structuring a smaller second cavity into the first cavity.

MEMS device comprising: a signal processing assembly; a transduction module comprising a plurality of transducer devices; a stiffening structure at least partially surrounding each transducer device; one or more coupling pillars for each transducer device, extending on the stiffening structure and configured to physically and electrically couple the transduction module to the signal processing assembly, to carry control signals of the transducer devices. Each conductive coupling element has a section having a shape such as to maximize the overlapping surface with the stiffening structure around the respective transducer device. This shape includes hypocycloid with a number of cusps equal to or greater than three; triangular; quadrangular.

The application provides a light reflection device preparation method and a light reflection device, and relates to the technical field of semiconductors. The preparation method comprises the following steps: providing a substrate with a control circuit, patterning a first metal layer to form a metal interconnection layer, and patterning a second metal layer to form a light reflection array. The metal interconnection layer is electrically connected with the control circuit and at least one light reflection structure of the light reflection array. The preparation method sequentially deposits the first metal layer and the second metal layer on the substrate and performs patterning, so that the metal interconnection layer and the light reflection array can be obtained. Therefore, the preparation of the light reflection device can be completed based on the preparation method by using MEMS technology, the process is simple, the cost is low, and the reliability of the device can be ensured. Moreover, the patterning of the metal interconnection layer and the light reflection array does not affect each other, the diversification of the light reflection structure can be realized, the number of the light reflection structure of the light reflection array is not limited, the size of the light reflection structure can be very small, and the volume of the light reflection device is reduced.

The invention relates to a method for manufacturing a detection device comprising at least one thermal detector (20) covered by a mineral sacrificial layer (14, 15), at least one getter portion (13) covered by a carbonaceous sacrificial layer (17), and a thin encapsulation layer (31) surrounding the thermal detector and the getter portion. The manufacturing method comprises a step of creating a via (16) extending through the mineral sacrificial layer (14, 15) and opening onto the substrate (10), and a step of depositing a carbonaceous sacrificial layer (17) so as to cover the getter portion (13) located in the via (16) and to completely fill the via (16).

The invention relates to a method for producing a microelectromechanical device (1) comprising a functional unit (2), a cavity (3), and a cap structure (4) that covers the cavity (3) and has at least one cavity access (5), in which method the cap structure (4) is produced by sequentially depositing material layers on a cap substrate (6), the functional unit (2) is attached to the cap structure (4), and at least one inlet channel (7) in the at least one cavity access (5) is formed in the cap structure (4) by means of etching, wherein, during the production of the cap structure (4), at least one inlet channel (7), at least one outlet channel (9) opening into the cavity (3), and at least one lateral channel (8) running parallel to a surface of the cap substrate (6) and opening into the at least one inlet channel (7) and into the at least one outlet channel (9) are formed in the cap structure (4), and wherein, during the production of the cap structure (4), a first etch-stop structure (10a) is formed in order to limit the insertion depth of the inlet channel (7) into the cap structure (4). The invention also relates to a microelectromechanical device (1).