373results about "Microstructural device assembly" patented technology

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention discloses a batch processing technology of micro-fluidic chips, and relates to the technical field of chip processing. The method comprises the following steps: firstly, providing at least two layers of polymer coiled materials, namely a first coiled material for forming a micro-channel structure and a second coiled material for closing a micro-channel, the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA), and the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA); the thickness of the coiled material is 50-500 microns; secondly, carrying out continuous compression molding processing on the surface of the first coiled material through a roll-to-roll processing platform; through a roll-to-roll continuous process, micro-channel mold pressing, functional deposition, precise alignment bonding and online cutting are integrated, high-efficiency, high-consistency and high-integration-level batch manufacturing of the micro-fluidic chip is realized, and manual intervention and production cost are remarkably reduced.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention relates to a heating and cooling system for wafer bonding equipment, which comprises a basic unit, a heating unit and a cooling unit, and is characterized in that the basic unit comprises an upper disc, a heating bin and a lower disc, and the heating bin is used for accommodating a wafer to be bonded and providing a vacuum environment for the wafer; the upper disc and the lower disc can be driven to be close to each other so as to apply set pressure to the wafer; an upper heater and a lower heater of the heating unit are used for heating the wafer in the axial direction, and an edge heater is used for carrying out heat compensation in the radial direction; an upper cooler and a lower cooler of the cooling unit are used for indirectly cooling the wafer; the wafer bonding device effectively improves heating uniformity and cooling efficiency in the wafer bonding process, can provide an accurate and effective vacuum environment for wafer bonding, and is simple in structure and easier to maintain and repair.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

The present invention provides a room-temperature quartz bonding method, comprising: S100, cleaning the surfaces of quartz wafers; S200, depositing silicon dioxide on two quartz wafers to form a silicon dioxide bonding film on the surfaces of the quartz wafers; S300, chemically mechanically polishing the silicon dioxide bonding film; S400, cleaning the quartz wafers with a hydrofluoric acid solution; and S500, bringing the silicon dioxide bonding films of the two quartz wafers into contact with each other and bonding the quartz wafers using a bonding machine. This method can achieve high-reliability bonding between quartz wafers at room temperature.

A sensor chip structure (600) design based on a solid-state quantum spin sensing system, a manufacturing method, and a supporting related device. The sensor chip structure (600) is a diamond-based magnetic field and temperature sensing chip manufactured on the basis of a micro-nano processing technique, and comprises: a microwave radiation structure, a diamond NV center material, a laser diode, a heat dissipation structure, an optical filter (7), and a photodetector (6) which are manufactured on an insulating substrate.

The invention provides a lead bonding and packaging device and a lead bonding and packaging method for a key process for packaging a deep cavity lead of an immersion type miniature liquid pressure sensor. The lead bonding packaging equipment comprises a rack, a movement mechanism mounting plate, an X-axis movement mechanism, a Y-axis movement mechanism, a first Z-axis movement mechanism and a second Z-axis movement mechanism, the movement mechanism mounting plate, the X-axis movement mechanism, the Y-axis movement mechanism, the first Z-axis movement mechanism and the second Z-axis movement mechanism are all mounted on the rack, a clamping mechanism is mounted on the X-axis movement mechanism or the Y-axis movement mechanism, and a visual microscopic mechanism is mounted on the first Z-axis movement mechanism. And a chopper positioning mechanism is mounted on the second Z-axis movement mechanism. According to the technical scheme provided by the invention, the alignment accuracy and stability in the wire leading process can be ensured, the yield and consistency of deep cavity bonding are improved, manual intervention and operation errors are reduced, automation of the wire bonding process is realized, the bonding precision and stability are improved, and the method has relatively high practicability and popularization value.

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

The invention discloses a silicon-based structure of a micro heat pipe and a processing technology, solves the problems that in the prior art, a metal micro heat pipe for heat dissipation of a silicon-based chip increases the thickness of the chip, and interface stripping and cracking are prone to occurring, and has the beneficial effects that heat dissipation of the micro heat pipe is achieved, and meanwhile the thickness of the silicon-based chip is effectively controlled. According to the specific scheme, the silicon-based structure of the micro heat pipe comprises a silicon-based chip substrate and a glass sheet, the silicon-based chip substrate and the glass sheet are attached together, a liquid absorption core is integrated on the side, facing the glass sheet, of the silicon-based chip substrate, and the liquid absorption core comprises an evaporation section, a heat insulation section and a condensation section which are sequentially connected; the length of the heat insulation section and the condensation section is larger than that of the evaporation section, the evaporation section comprises a plurality of working medium channels, all the working medium channels communicate with the heat insulation section, the working medium channels are arranged in an array mode, and every two adjacent working medium channels communicate with each other.

The application provides a resonant differential pressure sensor capable of static pressure measurement and a preparation method. The differential pressure sensor comprises a cover plate structure from top to bottom, a silicon-on-insulator (SOI) structure and a pressure guide structure. The cover plate structure comprises two small cover plates, i.e., a first small cover plate and a second small cover plate, and a large cover plate. The SOI structure comprises a device layer, a buried oxygen layer and a substrate layer. The beam membrane integrated structure has a stress amplification effect, which improves the small static pressure and differential pressure measurement sensitivity in the prior art, and the problems of large hysteresis, poor repeatability and poor precision caused thereby.

The invention relates to a clamp for MEMS probe annealing and an MEMS probe annealing method, and the clamp comprises a first wafer which is provided with a first PI layer on the surface of one side, and the first PI layer is provided with a first groove; a second PI layer is arranged on the surface of one side of the second wafer, and a second groove opposite to the first groove is formed in the second PI layer; the PI layers of the first wafer and the second wafer are oppositely arranged, and the first groove and the second groove are closed to form a cavity matched with the shape of the MEMS probe to be annealed. The clamp is formed by polyimide, the problem of deformation of a metal structure in high-temperature annealing is solved, meanwhile, the clamp can adapt to various complex structures, the probe is perfectly attached, a high-precision clamp does not need to be independently manufactured, and the manufacturing cost is reduced.

The invention provides an MEMS actuation cooling chip compatible with a CMOS technology and a manufacturing method, and relates to the field of semiconductor cooling, the MEMS actuation cooling chip comprises an actuator, a reverse vibration structure and a supporting structure, the reverse vibration structure comprises a reverse vibration plate, a CMOS drive circuit is integrated on the reverse vibration plate, and the CMOS drive circuit is connected with the actuator. The CMOS driving circuit is electrically connected with the actuator and the reverse vibration plate and outputs driving voltages with opposite phase differences, and the reverse vibration structure forms a first cavity below the actuator; the supporting structure is arranged on the reverse vibration structure and forms a second cavity communicated with the outside, the actuator is provided with an air hole communicated with the first cavity and the second cavity, and the upper portion of the supporting structure is used for arranging a chip body. The interconnection loss between the chips is reduced, and the production cost and the integration difficulty caused by process incompatibility are reduced at the same time.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

The application discloses a method for constructing sub-nanometer plasmonic nanocavity, comprising the following steps: (1) preparing a flexible metal nanometer array film; (2) constructing a spacing layer on the exposed metal side of a flexible metal nanometer array film, and then placing another flexible metal nanometer array film on the exposed metal side of the spacing layer, so that the two flexible metal nanometer array films are adsorbed and attached by Van der Waals force, thereby obtaining a plasmonic nanocavity, which allows polarized excitation, realizes the enhancement of molecular signal and carries out the research on adsorption form. Compared with the chemical synthesis method, the application is more accurate and easy to realize in the control of structure gap, and the substrate is more uniform; compared with the nanometer gap prepared by photolithography and ion beam, the substrate process of the application is simple, easy to operate and short in time consumption, and the structure has a controllable sub-nanometer gap. The method has simple preparation process, high repeatability and stability.

The present disclosure discloses a galvanometer unit, a preparation method thereof, a scanning mirror and a radar system. The galvanometer unit comprises a first substrate and a second substrate which are bonded, the second substrate comprises a galvanometer structure accommodated in a cavity structure, the galvanometer structure has a rotation axis, the first substrate comprises an electrostatic driving structure and a flat plate electrode which is arranged to face the second substrate and is insulated from the electrostatic driving structure, the electrostatic driving structure drives the flat plate electrode to reciprocate in a first direction, the flat plate electrode comprises a first main electrode and a second main electrode which are located on different sides of the rotation axis, and during the reciprocation of the flat plate electrode driven by the electrostatic driving structure, the overlapping area of the first main electrode and the second main electrode with the galvanometer structure changes, so that the electrostatic attraction force acting on the galvanometer structure changes, and the galvanometer structure is driven to rotate along the rotation axis.

The application discloses a micro-fluidic chip for sorting sub-micron scale cells, which is composed of three components of an upper cover plate, a cell sorting micro-channel and a lower bottom plate by layer bonding. The upper cover plate is provided with an outside inlet, an inside inlet, an outside outlet and an inside outlet. The cell sorting micro-channel is composed of three regions of an inlet structure adjusting region, a spiral channel region and an outlet region. The lower bottom plate is provided with a convex wedge-shaped structure, and three kinds of inlet structures of an outside-narrow-inside-wide shape, an outside-inside-equivalent shape and an outside-wide-inside-narrow shape can be obtained by adjusting the position of the wedge-shaped structure. The sub-micron scale cells are sorted by the cooperation of the cell sorting micro-channel and the wedge-shaped structure. The spiral micro-channel is introduced, the cell transverse migration starting point is controlled by adjusting the spiral channel inlet structure and cooperating with suitable flow conditions, and the high-precision sorting of the sub-micron scale cells is finally completed. The cell sorting diversity and adaptability are improved by flexibly adjusting according to specific sorting requirements.

A method (100) for producing an electrode structure (206) for an ion trap, comprising the following steps: providing (110) a base substrate (202) having a structured metallization arrangement (230) arranged in an insulating material (220) on a semiconductor layer (210); providing (120) an insulating substrate (250) having a dielectric material (252); bonding (130) a surface region (224) of the base substrate (202) arranged on the insulating material (220) to the insulating substrate (250) by means of a bonding process; and thinning (140) the base substrate (202) by removing the semiconductor layer (210) down to the insulating material (220) of the base substrate (202), wherein the electrode structure (206) is provided for the ion trap is formed by carrying out the step of back thinning to the metallization arrangement (230),or by applying a structured surface metallization (240) to the insulating material (220) of the re-thinned base substrate (202) or wherein the electrode structure (206) for the ion trap is formed by the structured metallization arrangement (230).

The present invention provides a double silicon-gold bonded MEMS deformable mirror and its fabrication method. The MEMS deformable mirror comprises a silicon wafer substrate, a silicon nitride insulating layer, a lower polysilicon electrode, a first phosphosilicate glass sacrificial layer, an upper interdigitated electrode, a first bonding electrode layer, an SOI wafer structure, a second bonding electrode layer, and a gold-based reflective mirror surface. The fabrication method sequentially involves silicon wafer substrate pretreatment, silicon nitride insulating layer deposition, lower polysilicon electrode formation, first phosphosilicate glass sacrificial layer deposition and thinning, upper interdigitated electrode and related structure etching, first bonding electrode layer formation, SOI wafer pretreatment and solution channel formation, second phosphosilicate glass sacrificial layer filling, second bonding electrode layer formation, gold-to-gold hot-compression bonding, deep silicon etching, structural release and annealing, and gold-based reflective mirror surface fabrication and packaging. This invention can simplify the process flow, improve the correction performance of optical systems, and has broad market application prospects.

The invention provides solid thin film material processing equipment and a control method thereof, and relates to the field of laser-induced forward transfer processing.The solid thin film material processing equipment uses two sets of adjusting devices to independently adjust and control the levelness of a donor substrate and a receiving substrate, so that the donor substrate and the receiving substrate are absolutely horizontal, and then high-precision relative parallelism is achieved; besides, the equipment stably adsorbs the donor substrate through the air pressure adsorption clamp, and realizes accurate control of the donor and the receiving substrate from an attached state to a state of keeping a micron-order or even submicron-order gap by combining with vertical movement of the piezoelectric platform.

The invention provides a bonding structure, an MEMS device and a bonding method, and the bonding structure comprises a first wafer, the surface of the first wafer is provided with a projection, and the surface of the projection is provided with a plurality of first bonding metal layers which are arranged at intervals; a plurality of second bonding metal layers which are arranged at intervals are arranged at positions, corresponding to the bulges, on the surface of the second wafer; the second wafer and the first wafer form a bonding structure through eutectic bonding between the first bonding metal layer and the second bonding metal layer; wherein the orthographic projection of the first bonding metal layer on the bulge and the orthographic projection of the second bonding metal layer on the bulge are at least partially not overlapped. According to the embodiment of the invention, the orthographic projection of the first bonding metal layer on the projection and the orthographic projection of the second bonding metal layer on the projection at least partially do not coincide, the non-coincident position forms a complementary structure during bonding to store overflow, the overflow risk is reduced, the coincident position forms a bonding structure through eutectic melting, and the bonding strength is ensured.

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

A mirror device manufacturing method includes a forming step of forming a structure by forming a base portion, a movable portion, and a coupling portion coupling the base portion and the movable portion to each other such that the movable portion is able to swing with respect to the base portion through processing of a wafer, and forming a mirror layer in the movable portion; and a collecting step of performing collection of foreign substances from the structure using a collection member after the forming step. A mirror unit manufacturing method includes a sealing step of sealing the mirror device after the collecting step.

The invention provides a processing method for an MEMS (Micro Electro Mechanical System) device and a wafer level packaging method. The method comprises the following steps: step 1, bonding a borosilicate glass sheet on a silicon substrate; 2, the glass layer obtained in the step 1 is thinned, so that the thickness of the glass layer meets the design requirement, and the thickness range is 3-20 microns; step 3, carrying out boss processing on the glass layer, and manufacturing anchor points; 4, metalizing the surface of the glass layer to manufacture a required lead; step 5, bonding another silicon wafer on the surface of the glass layer, and controlling the thickness of the silicon wafer to the required thickness of the sensitive structure layer in a thinning manner to form a silicon sensitive structure layer; and step 6, processing the silicon sensitive structure layer, and manufacturing a mass block, a beam and a comb tooth structure. According to the scheme, the parasitic capacitance between the lead and the silicon substrate layer can be greatly reduced, the process compatibility is good, and only the silicon substrate layer processing process of the all-silicon process needs to be adjusted.

The invention provides an MEMS device preparation method and an MEMS device, and the method comprises the steps: providing an MEMS assembly which comprises a first wafer and a first metal bonding layer located on the first wafer; forming an anti-bonding layer on the surface, close to the first metal bonding layer, of the first wafer; removing the anti-bonding layer on the surface of the first metal bonding layer in an illumination mode; providing a second wafer with a second metal bonding layer, and bonding the first metal bonding layer and the second metal bonding layer so as to bond the first wafer and the second wafer to obtain the MEMS device; the invention solves the technical problem that when a functional structure of an MEMS device is covered with a hydrophobic layer, a bonding surface is also covered with the hydrophobic layer, and in the prior art, the hydrophobic layer on the functional layer is difficult to well retain while the hydrophobic layer on the bonding surface is removed, so that the performance of the MEMS device is influenced.