230results about "Microstructural device assembly" patented technology

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

A sensor chip structure (600) design based on a solid-state quantum spin sensing system, a manufacturing method, and a supporting related device. The sensor chip structure (600) is a diamond-based magnetic field and temperature sensing chip manufactured on the basis of a micro-nano processing technique, and comprises: a microwave radiation structure, a diamond NV center material, a laser diode, a heat dissipation structure, an optical filter (7), and a photodetector (6) which are manufactured on an insulating substrate.

The invention discloses a silicon-based structure of a micro heat pipe and a processing technology, solves the problems that in the prior art, a metal micro heat pipe for heat dissipation of a silicon-based chip increases the thickness of the chip, and interface stripping and cracking are prone to occurring, and has the beneficial effects that heat dissipation of the micro heat pipe is achieved, and meanwhile the thickness of the silicon-based chip is effectively controlled. According to the specific scheme, the silicon-based structure of the micro heat pipe comprises a silicon-based chip substrate and a glass sheet, the silicon-based chip substrate and the glass sheet are attached together, a liquid absorption core is integrated on the side, facing the glass sheet, of the silicon-based chip substrate, and the liquid absorption core comprises an evaporation section, a heat insulation section and a condensation section which are sequentially connected; the length of the heat insulation section and the condensation section is larger than that of the evaporation section, the evaporation section comprises a plurality of working medium channels, all the working medium channels communicate with the heat insulation section, the working medium channels are arranged in an array mode, and every two adjacent working medium channels communicate with each other.

The invention relates to a clamp for MEMS probe annealing and an MEMS probe annealing method, and the clamp comprises a first wafer which is provided with a first PI layer on the surface of one side, and the first PI layer is provided with a first groove; a second PI layer is arranged on the surface of one side of the second wafer, and a second groove opposite to the first groove is formed in the second PI layer; the PI layers of the first wafer and the second wafer are oppositely arranged, and the first groove and the second groove are closed to form a cavity matched with the shape of the MEMS probe to be annealed. The clamp is formed by polyimide, the problem of deformation of a metal structure in high-temperature annealing is solved, meanwhile, the clamp can adapt to various complex structures, the probe is perfectly attached, a high-precision clamp does not need to be independently manufactured, and the manufacturing cost is reduced.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

The application discloses a method for constructing sub-nanometer plasmonic nanocavity, comprising the following steps: (1) preparing a flexible metal nanometer array film; (2) constructing a spacing layer on the exposed metal side of a flexible metal nanometer array film, and then placing another flexible metal nanometer array film on the exposed metal side of the spacing layer, so that the two flexible metal nanometer array films are adsorbed and attached by Van der Waals force, thereby obtaining a plasmonic nanocavity, which allows polarized excitation, realizes the enhancement of molecular signal and carries out the research on adsorption form. Compared with the chemical synthesis method, the application is more accurate and easy to realize in the control of structure gap, and the substrate is more uniform; compared with the nanometer gap prepared by photolithography and ion beam, the substrate process of the application is simple, easy to operate and short in time consumption, and the structure has a controllable sub-nanometer gap. The method has simple preparation process, high repeatability and stability.

The present disclosure discloses a galvanometer unit, a preparation method thereof, a scanning mirror and a radar system. The galvanometer unit comprises a first substrate and a second substrate which are bonded, the second substrate comprises a galvanometer structure accommodated in a cavity structure, the galvanometer structure has a rotation axis, the first substrate comprises an electrostatic driving structure and a flat plate electrode which is arranged to face the second substrate and is insulated from the electrostatic driving structure, the electrostatic driving structure drives the flat plate electrode to reciprocate in a first direction, the flat plate electrode comprises a first main electrode and a second main electrode which are located on different sides of the rotation axis, and during the reciprocation of the flat plate electrode driven by the electrostatic driving structure, the overlapping area of the first main electrode and the second main electrode with the galvanometer structure changes, so that the electrostatic attraction force acting on the galvanometer structure changes, and the galvanometer structure is driven to rotate along the rotation axis.

The invention provides a bonding structure, an MEMS device and a bonding method, and the bonding structure comprises a first wafer, the surface of the first wafer is provided with a projection, and the surface of the projection is provided with a plurality of first bonding metal layers which are arranged at intervals; a plurality of second bonding metal layers which are arranged at intervals are arranged at positions, corresponding to the bulges, on the surface of the second wafer; the second wafer and the first wafer form a bonding structure through eutectic bonding between the first bonding metal layer and the second bonding metal layer; wherein the orthographic projection of the first bonding metal layer on the bulge and the orthographic projection of the second bonding metal layer on the bulge are at least partially not overlapped. According to the embodiment of the invention, the orthographic projection of the first bonding metal layer on the projection and the orthographic projection of the second bonding metal layer on the projection at least partially do not coincide, the non-coincident position forms a complementary structure during bonding to store overflow, the overflow risk is reduced, the coincident position forms a bonding structure through eutectic melting, and the bonding strength is ensured.

A mirror device manufacturing method includes a forming step of forming a structure by forming a base portion, a movable portion, and a coupling portion coupling the base portion and the movable portion to each other such that the movable portion is able to swing with respect to the base portion through processing of a wafer, and forming a mirror layer in the movable portion; and a collecting step of performing collection of foreign substances from the structure using a collection member after the forming step. A mirror unit manufacturing method includes a sealing step of sealing the mirror device after the collecting step.

The invention provides an MEMS device preparation method and an MEMS device, and the method comprises the steps: providing an MEMS assembly which comprises a first wafer and a first metal bonding layer located on the first wafer; forming an anti-bonding layer on the surface, close to the first metal bonding layer, of the first wafer; removing the anti-bonding layer on the surface of the first metal bonding layer in an illumination mode; providing a second wafer with a second metal bonding layer, and bonding the first metal bonding layer and the second metal bonding layer so as to bond the first wafer and the second wafer to obtain the MEMS device; the invention solves the technical problem that when a functional structure of an MEMS device is covered with a hydrophobic layer, a bonding surface is also covered with the hydrophobic layer, and in the prior art, the hydrophobic layer on the functional layer is difficult to well retain while the hydrophobic layer on the bonding surface is removed, so that the performance of the MEMS device is influenced.

A MEMS transducer includes a deflectable membrane where the deflectable membrane includes two first layers and a second layer arranged between the two first layers. The two first layers comprise low-stress silicon nitride, and the second layer comprises doped silicon.

A microelectronic H-frame device includes a stack of two or more substrates, the stack of substrates including a top substrate and a bottom substrate, bonding of the top substrate to the bottom substrate creating a vertical electrical connection between the top substrate and the bottom substrate, a top surface of the top substrate including a top substrate top metallization and a bottom surface of the bottom substrate including a bottom substrate bottom metallization, an intermediate substrate metallization located between the top substrate and the bottom substrate, a micromachined top cover bonded to a top side of the stack of substrates, and a micromachined bottom cover bonded to a bottom side of the stack of substrates.

To provide a specimen analysis cartridge and the like with increased liquid leakage durability.SOLUTION: A specimen analysis cartridge includes a first substrate having a microfluidic channel formed on at least one surface thereof, a second substrate arranged opposite the surface on which the microfluidic channel is formed on the first substrate, and a photocurable resin layer by which the first substrate and the second substrate are bonded together. The first and second substrates include at least one of a cyclo-olefin polymer and a cyclo-olefin copolymer.SELECTED DRAWING: Figure 1

The invention discloses a differential capacitance MEMS (Micro Electro Mechanical System) acceleration sensor with a high common mode rejection ratio and a preparation method of the differential capacitance MEMS acceleration sensor. The sensor adopts a symmetrical double-beam and double-mass-block structure, acceleration measurement is realized through symmetrical layout of three-axis detection comb tooth capacitors, and the three-axis detection comb tooth capacitors specifically comprise X-axis and Y-axis differential detection comb tooth capacitor pairs and Z-axis detection comb tooth capacitors; the X-axis differential comb tooth capacitor pair and the Y-axis differential comb tooth capacitor pair take the central axis of the double-beam double-mass-block structure as the symmetry axis, and two groups of capacitors are arranged, so that under the action of acceleration, the overlapping areas of movable comb teeth and fixed comb teeth of the X-axis differential comb tooth capacitor pair and the Y-axis differential comb tooth capacitor pair are changed in an opposite trend, and differential output is formed; the acceleration is measured by detecting the change of the differential capacitance, and common-mode interference is effectively suppressed by using a differential superposition signal processing mode, so that high signal-to-noise ratio and long-term stability are ensured; the sensor is prepared by adopting a semiconductor process and an MEMS (Micro-Electro-Mechanical System) technology, so that wafer-level manufacturing is realized, and the consistency and batch production of chips are guaranteed.

The invention provides a packaging device and a packaging method, the packaging device comprises a first substrate, a second substrate, a bonding structure and a pixel structure, the first substrate is provided with a first bonding area, and the first bonding area is provided with micron-scale or nano-scale grooves or protrusions arranged in an array; a second bonding area corresponding to the first bonding area is arranged on the second substrate; the bonding structure is located in the first bonding area and the second bonding area and at least partially covers the micron-scale or nano-scale grooves or protrusions, and the pixel structure is located on the first substrate or the second substrate; the first substrate and the second substrate are bonded together through a bonding structure, and the pixel structure is packaged on the inner side of the first bonding area and the inner side of the second bonding area. By utilizing the capillary adsorption effect of the gaps between the micron-scale or nano-scale grooves or the micron-scale or nano-scale bulges, part of redundant solder is adsorbed, the overflow of the solder is remarkably inhibited, and the packaging yield is improved.

A MEMS transducer has a deflectable diaphragm, the deflectable diaphragm comprising two first layers and a second layer positioned between the two first layers. The two first layers consist of low-stress silicon nitride, and the second layer consists of doped silicon.

A first and second substrate (24,25) are bonded to each other to form a 3D assembly of micro-electronic components. Both substrates comprise a plurality of first cavities (17) open to the respective bonding surfaces (30) and at least one substrate comprises a second cavity (10) that is larger than the first cavities in terms of its in-plane dimensions, and possibly also in terms of its depth. Prior to bonding, an electrically conductive layer (16) is produced conformally on each substrate. Said layer is patterned in the large cavity or cavities (10) and in said large cavity or cavities a micro-electronic device or a portion thereof (11) is fabricated. Thereafter, the bonding surfaces are planarized, removing the conformal layer (16) from said bonding surfaces (30), after which the substrates are bonded to form the assembly, wherein the first cavities of both substrates are brought into mutual contact to form an electrical connection. Possibly, the first cavities (17) may be filled with a contact material (33) prior to the planarization step. Any device in the large cavities may be contacted through suitable connection means such as TSV connections (4,5) or back end of line interconnect levels.

The invention discloses an MEMS (Micro Electro Mechanical System) four-electrode conductivity sensor based on a laser drilling back lead and a preparation method thereof. The MEMS four-electrode conductivity sensor comprises an LCP (Liquid Crystal Polymer) substrate and a four-electrode circular ring structure arranged on the front surface of the LCP substrate, the four-electrode circular ring structure sequentially comprises a first current electrode, a first voltage electrode, a second voltage electrode and a second current electrode from the center of the substrate to the outside; a micro through hole penetrating through the LCP substrate is formed in the non-electric field sensitive area of each electrode through laser drilling; the platinum wire penetrates into the micro-through hole from the back of the LCP substrate, the bottom end is sintered and fixed through a conductive material covering the micro-through hole area on the back of the LCP substrate, and the top end is in low-resistance electrical connection with the metal layer of each electrode. According to the sensor, a four-electrode structure with optimized electric field constraint is adopted, the technology of laser drilling-platinum wire threading-platinum paste sintering is innovatively applied, front face drilling and back face lead packaging is achieved, the sensor can be directly used as a standard surface-mounted device to be installed, and the measuring performance, the environmental adaptability and the integration convenience are improved.

The invention relates to a metal eutectic bonding MEMS pressure sensor and a preparation method thereof, and belongs to the technical field of micro electro mechanical systems. The invention provides a metal eutectic bonding MEMS pressure sensor and a preparation method thereof. The sensor comprises a base, a lower bonding film, an upper bonding film, a substrate, an insulating film, a resistor strip and a thermistor film. The substrate, the insulating film, the resistor strip and the thermistor film form a core body; the silicon substrate manufactured through the MEMS technology is used as a core body, and the problem that the MEMS technology cannot be used for a metal elastomer in a traditional sputtering film type pressure sensor is solved. Aiming at the problems of an existing MEMS pressure sensor during assembly and system integration, low-stress connection between a core body and a metal base is realized by adopting a metal eutectic bonding technology, additional stress caused by difference of thermal expansion coefficients is effectively relieved, and by utilizing the characteristics of high strength and high stability of a metal eutectic bonding structure, the MEMS pressure sensor can be assembled and integrated with a system. The technical problem that the chip is easily damaged due to stress concentration in a gluing / welding mode is solved.

A MEMS device and a manufacturing method therefor, and an electronic device. The manufacturing method comprises: providing a first substrate (210) and a second substrate (220), wherein a first sacrificial layer (213) is formed on the surface of the first substrate (210), and a second sacrificial layer (223) is formed on the surface of the second substrate (220); forming a first structural layer (214) on the first sacrificial layer (213), and forming a second structural layer (224) on the second sacrificial layer (223), wherein the first structural layer (214) comprises a first structural region and a first bonding region, and the second structural layer (224) comprises a second structural region and a second bonding region; forming a first MEMS structure (215) in the first structural region, and forming a second MEMS structure (225) in the second structural region; forming a first cavity (216) and a second cavity (226); and bonding the first structural layer (214) and the second structural layer (224), such that the first cavity (216) and the second cavity (226) together form a cavity. The non-planar layout reduces the area of the MEMS device, reducing costs and device noise, while also improving the impact resistance of the device.

The invention relates to a MEMS semiconductor package (10) comprising an arrangement of a MEMS unit (2) and an ASIC unit (1), and to a method for manufacturing such a MEMS semiconductor package (10). In the presented method, - in a first material application process step (S3) at least one vertical wire (5), which is intended for transmitting control and / or measurement signals between an external interface and the ASIC unit (1), is formed freestanding on the ASIC unit (1) with respect to a Z-direction (Z); - in a second material application process step (S4), the vertical wire (5) is encased in potting compound to form a potting layer (9) in such a way that it is embedded in the potting layer (9); and - in a third material application process step (S6) a rewiring layer (6) is formed at least partially on the potting layer (9), wherein the rewiring layer (6) provides the external interface of the semiconductor housing (10) and includes at least one conductor track (7) which is electrically connected to the vertical wire (5) embedded in the potting layer (9) for the transmission of the control and / or measurement signals.

The invention relates to a method for processing a wafer (100), comprising the following steps: providing the wafer having a structure for a plurality of chips (120) and having a first surface and a second surface opposite the first surface, providing a wire mesh (300) having a base (320) and one or more support structures (310) arranged on the base, the invention relates to a method for producing a wafer comprising one or more support structures of a wire mesh, separating the wafer into the chips, each chip having a surface to be protected (122b), removing the chips from the wafer, placing at least a portion of the removed chips on the one or more support structures of the wire mesh in such a way that a desired arrangement of the placed chips is achieved, the surface to be protected is directed towards the bottom of the wire mesh and is not in direct contact with the one or more support structures, and subsequently connecting the placed chips to a common element, the placement of the placed chips relative to each other being maintained.

An advanced method for manufacturing an optoelectronic system array is disclosed in which micro-devices are developed separately and then transferred into a system substrate. Various embodiments are disclosed, including distributed sacrificial reference points, real-time monitoring with various sensing techniques, laser generated alignment marks, non-contact laser triangulation, and marking using polymers to dynamically estimate and correct alignment during each transfer phase. The invention further discloses a method for detecting and correcting errors caused by wear, environmental changes, load variability and mechanical vibrations, which may be AI-based. Generally, the system for pre-transfer calibration, monitoring, error detection, and compensatory adjustment enables precise and reliable integration of micro-devices into optoelectronic systems, thereby significantly enhancing alignment accuracy, stability, and reliability throughout the manufacturing process. The system may further be AI-based calibration verification in a micro device transfer system.

The application discloses infrared FPA-on-MEMS technology, belongs to the field of optical imaging and micro-electro-mechanical system integration technology, is used for manufacturing of infrared FPA-on-MEMS chip, utilizes the design of electrothermal-electrostatic dual driving module manufacturing process and the integration of infrared FPA unit on the middle platform of electrothermal-electrostatic dual driving module, can realize the coupling design of infrared FPA unit and MEMS driving technology on the chip level, and obtains infrared FPA-on-MEMS chip with automatic displacement control capability.The infrared FPA-on-MEMS technology of the application can effectively overcome the problems of large volume, slow speed, high power consumption and complex system caused by the fact that the traditional infrared imaging system relies on external optical mechanical components to realize functions such as anti-shake, scanning and zooming, improves the integration and reliability of the infrared thermal imaging system, breaks through the application bottleneck of the infrared thermal imaging technology, greatly improves the system integration and comprehensive use performance of the infrared thermal imaging system, and has excellent application prospect.