516results about "Microstructural device assembly" patented technology

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

The invention discloses a batch processing technology of micro-fluidic chips, and relates to the technical field of chip processing. The method comprises the following steps: firstly, providing at least two layers of polymer coiled materials, namely a first coiled material for forming a micro-channel structure and a second coiled material for closing a micro-channel, the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA), and the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA); the thickness of the coiled material is 50-500 microns; secondly, carrying out continuous compression molding processing on the surface of the first coiled material through a roll-to-roll processing platform; through a roll-to-roll continuous process, micro-channel mold pressing, functional deposition, precise alignment bonding and online cutting are integrated, high-efficiency, high-consistency and high-integration-level batch manufacturing of the micro-fluidic chip is realized, and manual intervention and production cost are remarkably reduced.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention relates to a heating and cooling system for wafer bonding equipment, which comprises a basic unit, a heating unit and a cooling unit, and is characterized in that the basic unit comprises an upper disc, a heating bin and a lower disc, and the heating bin is used for accommodating a wafer to be bonded and providing a vacuum environment for the wafer; the upper disc and the lower disc can be driven to be close to each other so as to apply set pressure to the wafer; an upper heater and a lower heater of the heating unit are used for heating the wafer in the axial direction, and an edge heater is used for carrying out heat compensation in the radial direction; an upper cooler and a lower cooler of the cooling unit are used for indirectly cooling the wafer; the wafer bonding device effectively improves heating uniformity and cooling efficiency in the wafer bonding process, can provide an accurate and effective vacuum environment for wafer bonding, and is simple in structure and easier to maintain and repair.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

The invention discloses an MEMS device and a manufacturing method thereof, and an electronic device, the MEMS device comprises a first semiconductor substrate and a second semiconductor substrate, the first semiconductor substrate and the second semiconductor substrate are bonded, and a device region is arranged between the first semiconductor substrate and the second semiconductor substrate; the semiconductor device further comprises a liquid blocking wall structure, the liquid blocking wall structure, the first semiconductor substrate and the second semiconductor substrate define cavity units, and the device area is correspondingly arranged in one cavity unit. In the manufacturing process of the MEMS device, even if cracks are generated in the semiconductor substrate, corrosive liquid entering the device regions along the cracks is difficult to diffuse in a large area among the plurality of device regions due to the blocking of the liquid blocking wall structure, so that the metal structure of the large-area device region is prevented from being corroded, and the reliability of the MEMS device is improved. Therefore, the chip yield of the whole semiconductor substrate is improved.

The present invention provides a room-temperature quartz bonding method, comprising: S100, cleaning the surfaces of quartz wafers; S200, depositing silicon dioxide on two quartz wafers to form a silicon dioxide bonding film on the surfaces of the quartz wafers; S300, chemically mechanically polishing the silicon dioxide bonding film; S400, cleaning the quartz wafers with a hydrofluoric acid solution; and S500, bringing the silicon dioxide bonding films of the two quartz wafers into contact with each other and bonding the quartz wafers using a bonding machine. This method can achieve high-reliability bonding between quartz wafers at room temperature.

According to the preparation method of the vacuum device, the vacuum device and the electronic equipment provided by the invention, the carrier plate groove is formed in the outer side of the bonding groove, and the carrier plate electrode is arranged outside the cavity structure, so that the influence of the carrier plate electrode on the vacuum effect of the cavity structure is avoided, and the vacuum effect of the cavity structure is improved. Moreover, the arrangement of the bonding groove not only can avoid the influence on the vacuum effect of the cavity structure due to the overflow of the solder bump to the periphery during the subsequent substrate bonding, but also can avoid the influence on the bonding effect of the substrate due to the projection of the solder bump, thereby further improving the vacuum effect of the cavity structure, and improving the bonding effect of the substrate. Besides, a carrier exposed groove is formed in the second substrate in advance, and a vacuum device formed after bonding can be directly ground to expose a carrier electrode and an alignment mark, so that the possibility of damage to the cavity structure is avoided, and the vacuum effect of the cavity structure is further improved.

The invention discloses an overlapping structure comb tooth capacitance type Z-axis acceleration sensitive chip and a manufacturing method thereof, and belongs to the technical field of MEMS sensors. The sensitive chip is formed by overlapping a comb tooth capacitor layer and an elastic beam structure layer, and the comb tooth capacitor layer and the elastic beam structure layer are bonded together through an oxide layer. In addition to the advantage of small damping coefficient, the comb capacitor has the following three advantages: 1, the structure of overlapping the comb capacitor and the elastic beam does not need to occupy extra chip area, which is beneficial to microminiaturization and can reduce chip cost at the same time; secondly, the comb capacitor and the elastic beam are overlapped, so that the elastic beam is prevented from occupying the space for distributing the comb teeth around the mass block when the comb capacitor and the elastic beam are placed in a plane, the number of the comb teeth is greatly increased, and the capacitance of the comb structure is effectively increased; and thirdly, the elastic beams can be symmetrically distributed around the mass block due to the overlapping structure, and the cross coupling influence in the X-axis direction and the Y-axis direction is remarkably reduced.

A sensor chip structure (600) design based on a solid-state quantum spin sensing system, a manufacturing method, and a supporting related device. The sensor chip structure (600) is a diamond-based magnetic field and temperature sensing chip manufactured on the basis of a micro-nano processing technique, and comprises: a microwave radiation structure, a diamond NV center material, a laser diode, a heat dissipation structure, an optical filter (7), and a photodetector (6) which are manufactured on an insulating substrate.

The invention provides a lead bonding and packaging device and a lead bonding and packaging method for a key process for packaging a deep cavity lead of an immersion type miniature liquid pressure sensor. The lead bonding packaging equipment comprises a rack, a movement mechanism mounting plate, an X-axis movement mechanism, a Y-axis movement mechanism, a first Z-axis movement mechanism and a second Z-axis movement mechanism, the movement mechanism mounting plate, the X-axis movement mechanism, the Y-axis movement mechanism, the first Z-axis movement mechanism and the second Z-axis movement mechanism are all mounted on the rack, a clamping mechanism is mounted on the X-axis movement mechanism or the Y-axis movement mechanism, and a visual microscopic mechanism is mounted on the first Z-axis movement mechanism. And a chopper positioning mechanism is mounted on the second Z-axis movement mechanism. According to the technical scheme provided by the invention, the alignment accuracy and stability in the wire leading process can be ensured, the yield and consistency of deep cavity bonding are improved, manual intervention and operation errors are reduced, automation of the wire bonding process is realized, the bonding precision and stability are improved, and the method has relatively high practicability and popularization value.

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

A method for transferring a component comprises providing a transfer arrangement comprising the component, a carrier substrate, and a connecting structure. The carrier substrate is transparent to laser radiation. The component is connected to the carrier substrate via the connecting structure. The connecting structure has at least one layer stack with a melt layer made of a melt metal and a dewetting layer adjacent to the melt layer. The method further comprises positioning the transfer arrangement over a target substrate. Furthermore, laser radiation is emitted in the direction of the at least one layer stack through the carrier substrate, such that melting of the melt metal of the melt layer and dewetting of the melted melt metal from the dewetting layer are caused, and thereby the component is separated from the carrier substrate and transferred to the target substrate.

A multi-beam microscanner system for projecting, in particular for imaging, electromagnetic radiation onto an observation field, in particular into a solid angle emanating from the microscanner system, comprises a substrate stack with a plurality of substrate layers stacked one on top of the other along a stacking direction. A radiation source, in particular a laser radiation source with one or more lasers, for generating the electromagnetic radiation, in particular one or more laser beams, is arranged in or on a first substrate layer of the substrate stack.A second substrate layer of the substrate stack comprises a micro-electro-mechanical system (MEMS) with at least one deflection element arranged in a beam path of the electromagnetic radiation and suspended so as to be capable of rotational vibration about at least one oscillation axis for deflecting at least one electromagnetic beam emitted by the radiation source in a directionally variable manner. The microscanner system is produced by singulation from a layer arrangement, so that the manufacturing steps prior to singulation for a plurality of microscanner systems can be performed at the level of the layer arrangement. An image projection device contains a plurality of the multi-beam microscanner systems.

The invention relates to a preparation method of a piezoresistive high-temperature pressure sensor based on a TSV (Through Silicon Via) of a silicon column. The preparation method comprises the following steps: 1, preparing an annular isolation groove filled with polycrystalline silicon on a low-resistance double-parabolic silicon wafer; 2, preparing a TSV silicon column and a bonding boss on the double-polished silicon wafer; 3, preparing a P-type voltage dependent resistor and an inner lead on the top layer silicon of the SOI silicon wafer; 4, preparing a closed annular groove at the periphery of the SOI silicon wafer, and preparing a semi-closed annular groove at the corresponding position of the TSV silicon column; 5, aligning and bonding the double-polished silicon wafer and the SOI silicon wafer; 6, preparing a TSV cap layer metal electrode from the bonded P-type double-polished silicon wafer; and 7, preparing a pressure sensitive film structure on the lower surface of the bonded SOI silicon wafer. The high-temperature pressure sensor has the beneficial effects that the TSV silicon column process, the dielectric isolation piezoresistive process and the thermal expansion buffer tank process suitable for the high-temperature working environment form an all-silicon structure of the high-temperature pressure sensor, the thermal stress matching is good, and the influence of high-temperature stress on the device performance can be effectively reduced.

The invention discloses a silicon-based structure of a micro heat pipe and a processing technology, solves the problems that in the prior art, a metal micro heat pipe for heat dissipation of a silicon-based chip increases the thickness of the chip, and interface stripping and cracking are prone to occurring, and has the beneficial effects that heat dissipation of the micro heat pipe is achieved, and meanwhile the thickness of the silicon-based chip is effectively controlled. According to the specific scheme, the silicon-based structure of the micro heat pipe comprises a silicon-based chip substrate and a glass sheet, the silicon-based chip substrate and the glass sheet are attached together, a liquid absorption core is integrated on the side, facing the glass sheet, of the silicon-based chip substrate, and the liquid absorption core comprises an evaporation section, a heat insulation section and a condensation section which are sequentially connected; the length of the heat insulation section and the condensation section is larger than that of the evaporation section, the evaporation section comprises a plurality of working medium channels, all the working medium channels communicate with the heat insulation section, the working medium channels are arranged in an array mode, and every two adjacent working medium channels communicate with each other.

Herein is provided a method for bonding a first substrate with a second substrate, comprising the steps of: providing a first and a second substrate, and bonding the first substrate and the second substrate together using a rectangular bond force concentrator to form a bond, wherein the first substrate or the second substrate comprises a device. Herein is further provided an apparatus comprising a first substrate and a second substrate bonded together using a rectangular bond force concentrator to form a bond. Herein is further provided a use of a bond force concentrator in bonding a first substrate and a second substrate to form a bond.

The application provides a resonant differential pressure sensor capable of static pressure measurement and a preparation method. The differential pressure sensor comprises a cover plate structure from top to bottom, a silicon-on-insulator (SOI) structure and a pressure guide structure. The cover plate structure comprises two small cover plates, i.e., a first small cover plate and a second small cover plate, and a large cover plate. The SOI structure comprises a device layer, a buried oxygen layer and a substrate layer. The beam membrane integrated structure has a stress amplification effect, which improves the small static pressure and differential pressure measurement sensitivity in the prior art, and the problems of large hysteresis, poor repeatability and poor precision caused thereby.

The invention relates to a clamp for MEMS probe annealing and an MEMS probe annealing method, and the clamp comprises a first wafer which is provided with a first PI layer on the surface of one side, and the first PI layer is provided with a first groove; a second PI layer is arranged on the surface of one side of the second wafer, and a second groove opposite to the first groove is formed in the second PI layer; the PI layers of the first wafer and the second wafer are oppositely arranged, and the first groove and the second groove are closed to form a cavity matched with the shape of the MEMS probe to be annealed. The clamp is formed by polyimide, the problem of deformation of a metal structure in high-temperature annealing is solved, meanwhile, the clamp can adapt to various complex structures, the probe is perfectly attached, a high-precision clamp does not need to be independently manufactured, and the manufacturing cost is reduced.

The invention provides an MEMS actuation cooling chip compatible with a CMOS technology and a manufacturing method, and relates to the field of semiconductor cooling, the MEMS actuation cooling chip comprises an actuator, a reverse vibration structure and a supporting structure, the reverse vibration structure comprises a reverse vibration plate, a CMOS drive circuit is integrated on the reverse vibration plate, and the CMOS drive circuit is connected with the actuator. The CMOS driving circuit is electrically connected with the actuator and the reverse vibration plate and outputs driving voltages with opposite phase differences, and the reverse vibration structure forms a first cavity below the actuator; the supporting structure is arranged on the reverse vibration structure and forms a second cavity communicated with the outside, the actuator is provided with an air hole communicated with the first cavity and the second cavity, and the upper portion of the supporting structure is used for arranging a chip body. The interconnection loss between the chips is reduced, and the production cost and the integration difficulty caused by process incompatibility are reduced at the same time.

A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

The application discloses a method for constructing sub-nanometer plasmonic nanocavity, comprising the following steps: (1) preparing a flexible metal nanometer array film; (2) constructing a spacing layer on the exposed metal side of a flexible metal nanometer array film, and then placing another flexible metal nanometer array film on the exposed metal side of the spacing layer, so that the two flexible metal nanometer array films are adsorbed and attached by Van der Waals force, thereby obtaining a plasmonic nanocavity, which allows polarized excitation, realizes the enhancement of molecular signal and carries out the research on adsorption form. Compared with the chemical synthesis method, the application is more accurate and easy to realize in the control of structure gap, and the substrate is more uniform; compared with the nanometer gap prepared by photolithography and ion beam, the substrate process of the application is simple, easy to operate and short in time consumption, and the structure has a controllable sub-nanometer gap. The method has simple preparation process, high repeatability and stability.