697results about "Microstructural device assembly" patented technology

The invention discloses a fishbone-Tesla valve micro-mixing chip and a preparation method and application thereof.The micro-mixing chip comprises a chip body, a Tesla valve and at least two mixing inlets are formed, the Tesla valve comprises at least one mixing unit, the mixing inlets are communicated with the unit inlets of the mixing units on the outermost side, and the mixing units are communicated with the mixing inlets of the mixing units on the outermost side; at least one mixing unit in the Tesla valve is provided with at least one fishbone structure, and the sharp corner of the fishbone structure faces the mixing inlet. At least one fishbone structure is arranged in the Tesla valve, the sharp corner of the fishbone structure faces the mixing inlet, when fluid in the Tesla valve flows through the fishbone structure, the fluid in the Tesla valve dispersedly flows towards the two sides through the fishbone structure, transverse flowing of the fluid is promoted, and therefore the mixing efficiency of the micro mixing chip is improved.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

The invention provides a method for aligning a bonding body wafer on a non-infrared exposure machine, which comprises the following steps of: providing the bonding body wafer which comprises a plurality of wafers in bonding connection, and forming alignment marks on the bonding surfaces of the wafers which are mutually bonded; manufacturing an alignment photomask, wherein the alignment photomask is provided with an alignment mark window pattern; forming an alignment mark window on the surface of the bonding body wafer by utilizing photoetching and etching processes through an alignment photomask, and exposing the alignment mark on the bonding surface through the alignment mark window; and carrying out photoetching alignment through the exposed alignment mark. According to the method, the alignment problem when the alignment mark on the non-infrared exposure machine is positioned in the bonding body wafer is solved. The invention further provides a preparation method of the semiconductor device, the alignment method is adopted for alignment after the front face and the back face of a bonding body wafer are thinned, then the pattern face of the device is processed, and possible pollution to the bonding face and possible damage to the pattern face are avoided.

The invention relates to a method for mounting a MEMS micromirror unit (100) in a higher-level assembly (200) with at least one receptacle (210) for a MEMS micromirror unit (110), as is used, for example, in projection exposure systems (1) for photolithography. The invention further relates to a MEMS micromirror unit (100) advantageously designed for this purpose. The process is characterized by the following steps: a) Inserting the MEMS micromirror unit (100) into the receptacle (210); b) Aligning the MEMS micromirror unit (100) with the recording (210); c) Applying an axial tensile force to an interface element (120) of the MEMS micromirror unit greater than the subsequent preload force, resulting in a longitudinal elongation of the interface element (120); d) Attaching the prestressing element (300) to a predetermined longitudinal position on the interface element (120); and e) Reducing and removing the axial tensile force. At the latest during the reduction of the axial tensile force, the preload element (300) comes into contact with the receptacle (210) and prevents a complete reversal of the longitudinal strain of the interface element (120), thus leaving a preload force on the interface element (120) with which the MEMS micromirror unit (100) can be fixed in the receptacle (210).

The invention discloses an MEMS device and a preparation method thereof, and the preparation method comprises the steps: providing a first wafer, forming a cavity in the upper part of the first wafer, and forming a porous silicon layer at the bottom of the cavity; providing a second wafer with an etching stop layer on the surface, and bonding the upper side of the first wafer and the etching stop layer; a boss and a first bonding metal layer located on the boss are formed on the side, away from the first wafer, of the second wafer; forming a groove penetrating through the second wafer in the second wafer, and removing the etching stop layer between the cavity and the second wafer to form a suspended comb tooth structure; and providing a third wafer with a patterned second bonding metal layer on the surface, and bonding the second bonding metal layer and the first bonding metal layer to form a vacuum chamber. According to the technical scheme, the quality factor of the MEMS device can be remarkably improved.

The invention discloses a batch processing technology of micro-fluidic chips, and relates to the technical field of chip processing. The method comprises the following steps: firstly, providing at least two layers of polymer coiled materials, namely a first coiled material for forming a micro-channel structure and a second coiled material for closing a micro-channel, the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA), and the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA); the thickness of the coiled material is 50-500 microns; secondly, carrying out continuous compression molding processing on the surface of the first coiled material through a roll-to-roll processing platform; through a roll-to-roll continuous process, micro-channel mold pressing, functional deposition, precise alignment bonding and online cutting are integrated, high-efficiency, high-consistency and high-integration-level batch manufacturing of the micro-fluidic chip is realized, and manual intervention and production cost are remarkably reduced.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention relates to a method for manufacturing a MEMS micromirror unit (100) for use in projection exposure systems (1) for photolithography, and to a MEMS micromirror unit (100) manufactured according to this method. The invention also relates to a system for semiconductor technology with a corresponding MEMS micromirror unit (100), and to an electronic component manufactured with such a system. The MEMS micromirror unit (100) comprises a MEMS mirror array assembly (110) with a MEMS mirror array structure (111), a joining structure (115), and an interface element (120) for attaching the MEMS micromirror unit (100) to a higher-level assembly, with a joining structure (125) that interacts with it in a form-fitting manner, and at least one stop surface (121, 121'). The manufacturing process comprises the following steps: a) Measuring the relative position and location of the MEMS mirror array structure (111) to the joining structure (115); b) Adjusting the relative position and / or location of the joining structure (125) of the interface element (120) and the at least one stop surface (121, 121') such that the relative position and location of the MEMS mirror array structure (111) and the at least one stop surface (121, 121') after joining the MEMS mirror array assembly (110) and interface element (120) via the joining structures (115, 125) corresponds to a predetermined position and location.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention discloses a flexible strain sensor and a preparation method thereof, and relates to the technical field of sensors, the flexible strain sensor comprises a first flexible substrate layer and a plurality of sensor modules, the plurality of sensor modules are arranged on the first flexible substrate layer in an array structure, each sensor module comprises at least one strain gauge, and the strain gauges are arranged on the first flexible substrate layer. The strain gauges of all the sensor modules are electrically connected, each sensor module, the strain gauge of the sensor module and the first flexible substrate layer corresponding to the bottom protrude outwards to form a protruding structure, and when the protruding structure makes contact with a detected object, the strain gauge on the protruding structure is used for detecting the deformation quantity of the detected object. The flexible strain sensor provided by the embodiment of the invention not only is suitable for hard materials such as metal structures with relatively large rigidity, but also is suitable for elastic or composite materials with large deformation.

The invention discloses an advanced method for manufacturing optoelectronic system arrays, where microdevices are developed separately and then transferred into a system substrate. The invention discloses multiple embodiments, including distributed sacrificial reference points, real-time monitoring with various sensing technologies, laser-generated alignment marks, non-contact laser triangulation, and using polymers for marking to assess and correct alignment during each transfer stage dynamically. The invention further discloses methods, which may be AI based, for detecting and correcting errors caused by wear, environmental changes, load variability, and mechanical vibrations. In general, this system for pre-transfer calibration, monitoring, error detection, and compensatory adjustments enables precise and reliable integration of microdevices into optoelectronic systems, significantly enhancing alignment accuracy, stability, and reliability throughout the manufacturing process. The system can be further an AI-based calibration validation in a microdevice transfer system.

The invention relates to the technical field of semiconductors, in particular to a preparation method of an MEMS micromirror, and the preparation method comprises the steps: providing a wafer substrate which is provided with a front surface and a back surface which are opposite to each other, and the front surface is a functional surface used for forming the MEMS micromirror; a conductive column and a first mark are formed on the wafer substrate, the conductive column penetrates through the wafer substrate, and the first mark is located on the back face of the wafer substrate; forming a second mark and a first functional structure on the front surface of the wafer substrate; forming a bonding layer on the front side of the wafer substrate, wherein the bonding layer is located above the conductive columns, the second marks and the first functional structures; forming a mark window for exposing the second mark on the bonding layer by taking the first mark as an overlay alignment point; and forming a second functional structure on the bonding layer by taking the second mark as an overlay alignment point, and aligning the second functional structure with the first functional structure in an overlay manner. Based on the technical scheme, the alignment precision in the MEMS micromirror preparation process can be effectively improved.

The invention relates to a heating and cooling system for wafer bonding equipment, which comprises a basic unit, a heating unit and a cooling unit, and is characterized in that the basic unit comprises an upper disc, a heating bin and a lower disc, and the heating bin is used for accommodating a wafer to be bonded and providing a vacuum environment for the wafer; the upper disc and the lower disc can be driven to be close to each other so as to apply set pressure to the wafer; an upper heater and a lower heater of the heating unit are used for heating the wafer in the axial direction, and an edge heater is used for carrying out heat compensation in the radial direction; an upper cooler and a lower cooler of the cooling unit are used for indirectly cooling the wafer; the wafer bonding device effectively improves heating uniformity and cooling efficiency in the wafer bonding process, can provide an accurate and effective vacuum environment for wafer bonding, and is simple in structure and easier to maintain and repair.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

The invention relates to the technical field of atomic gas chamber preparation, and discloses atomic gas chamber preparation equipment and method and an atomic gas chamber. The equipment comprises a vacuum box, a wafer bonding machine and an alkali metal injection device, the alkali metal injection device comprises a vacuum pump, an injection valve body, a heating piece, a vacuum firing pin and a vacuum probe row, the alkali metal injection and bonding process is carried out in a vacuum environment, and the situation that oxygen in the atmospheric environment oxidizes alkali metal and influences the quality of an atomic gas chamber can be effectively avoided; and meanwhile, external particulate matters are prevented from contaminating between the gas chamber component and the gas chamber sealing plate to influence the bonding effect and sealing performance, and the leakage rate of the atomic gas chamber can be effectively reduced, that is, the atomic gas chamber prepared by the atomic gas chamber preparation equipment is relatively high in yield and preparation efficiency.

The invention discloses an MEMS device functional layer preparation method and an MEMS device, and the method comprises the steps: providing a first substrate which is provided with a front surface and a back surface which are opposite to each other; etching the front surface of the first substrate, and forming a cavity in the front surface of the first substrate; providing a second substrate having opposite front and back surfaces; forming an etching stop layer on the front surface of the second substrate; bonding the front surface of the second substrate with the front surface of the first substrate to enable the etching stop layer to seal the cavity; thinning the back surface of the second substrate; carrying out deep groove etching on the back surface of the second substrate, and stopping on the etching stop layer so as to form a movable functional layer pattern above the cavity; and removing the etching stop layer between the movable functional layer pattern and the cavity. According to the invention, the integrity of the functional layer pattern on the cavity structure of the MEMS device can be improved.

The invention discloses an MEMS device and a manufacturing method thereof, and an electronic device, the MEMS device comprises a first semiconductor substrate and a second semiconductor substrate, the first semiconductor substrate and the second semiconductor substrate are bonded, and a device region is arranged between the first semiconductor substrate and the second semiconductor substrate; the semiconductor device further comprises a liquid blocking wall structure, the liquid blocking wall structure, the first semiconductor substrate and the second semiconductor substrate define cavity units, and the device area is correspondingly arranged in one cavity unit. In the manufacturing process of the MEMS device, even if cracks are generated in the semiconductor substrate, corrosive liquid entering the device regions along the cracks is difficult to diffuse in a large area among the plurality of device regions due to the blocking of the liquid blocking wall structure, so that the metal structure of the large-area device region is prevented from being corroded, and the reliability of the MEMS device is improved. Therefore, the chip yield of the whole semiconductor substrate is improved.

The invention provides a micro-fluidic chip for coating biological substances through magnetic force and a preparation method thereof.The micro-fluidic chip comprises a substrate and a cover plate, the substrate and the cover plate enclose to form a micro-channel, one end of the micro-channel is connected with a sample adding hole formed in the cover plate, the other end of the micro-channel is connected with a waste liquid area, and the waste liquid area has water absorbability; a marking area and a detection area are arranged in the micro-channel, the marking area and the detection area are sequentially distributed in the flowing direction of a sample, a detection point and a reference point are arranged in the detection area, magnetic blocks are arranged below the substrate corresponding to the detection point and the reference point, a marking antibody is arranged in the marking area, and the magnetic blocks are arranged in the detection area. The detection point is provided with a magnetic particle coupled capture antigen / antibody, and the reference point is provided with a magnetic particle coupled anti-species antibody aiming at the labeled region antibody. According to the micro-fluidic chip, the coating mode of biomolecules on the micro-fluidic chip is improved from a traditional chemical coating mode to a coating mode of adsorbing magnetic particles through magnetism, so that the manufacturing process of the chip is simplified.

The present invention provides a room-temperature quartz bonding method, comprising: S100, cleaning the surfaces of quartz wafers; S200, depositing silicon dioxide on two quartz wafers to form a silicon dioxide bonding film on the surfaces of the quartz wafers; S300, chemically mechanically polishing the silicon dioxide bonding film; S400, cleaning the quartz wafers with a hydrofluoric acid solution; and S500, bringing the silicon dioxide bonding films of the two quartz wafers into contact with each other and bonding the quartz wafers using a bonding machine. This method can achieve high-reliability bonding between quartz wafers at room temperature.

According to the preparation method of the vacuum device, the vacuum device and the electronic equipment provided by the invention, the carrier plate groove is formed in the outer side of the bonding groove, and the carrier plate electrode is arranged outside the cavity structure, so that the influence of the carrier plate electrode on the vacuum effect of the cavity structure is avoided, and the vacuum effect of the cavity structure is improved. Moreover, the arrangement of the bonding groove not only can avoid the influence on the vacuum effect of the cavity structure due to the overflow of the solder bump to the periphery during the subsequent substrate bonding, but also can avoid the influence on the bonding effect of the substrate due to the projection of the solder bump, thereby further improving the vacuum effect of the cavity structure, and improving the bonding effect of the substrate. Besides, a carrier exposed groove is formed in the second substrate in advance, and a vacuum device formed after bonding can be directly ground to expose a carrier electrode and an alignment mark, so that the possibility of damage to the cavity structure is avoided, and the vacuum effect of the cavity structure is further improved.

The invention discloses an overlapping structure comb tooth capacitance type Z-axis acceleration sensitive chip and a manufacturing method thereof, and belongs to the technical field of MEMS sensors. The sensitive chip is formed by overlapping a comb tooth capacitor layer and an elastic beam structure layer, and the comb tooth capacitor layer and the elastic beam structure layer are bonded together through an oxide layer. In addition to the advantage of small damping coefficient, the comb capacitor has the following three advantages: 1, the structure of overlapping the comb capacitor and the elastic beam does not need to occupy extra chip area, which is beneficial to microminiaturization and can reduce chip cost at the same time; secondly, the comb capacitor and the elastic beam are overlapped, so that the elastic beam is prevented from occupying the space for distributing the comb teeth around the mass block when the comb capacitor and the elastic beam are placed in a plane, the number of the comb teeth is greatly increased, and the capacitance of the comb structure is effectively increased; and thirdly, the elastic beams can be symmetrically distributed around the mass block due to the overlapping structure, and the cross coupling influence in the X-axis direction and the Y-axis direction is remarkably reduced.

The invention provides a novel semiconductor test probe packaging process. The novel semiconductor test probe packaging process comprises the following steps: cleaning a first intermediate product; filling a glue layer on the top surface of the first intermediate product; bonding a glass plate on the top surface of the glue layer to obtain a second intermediate product; turning over the second intermediate product; coating a photoresist layer on the top surface of the silicon substrate, and photoetching and developing a preset position of the photoresist layer to form a metal column etching position; etching the silicon substrate and the metal layer right below the metal column etching position to form a metal column growth position; growing a metal column at the metal column growth position by using an electroplating method; cleaning after removing the photoresist layer to obtain a third intermediate product; turning over the third intermediate product; removing the glass plate and the glue layer; bonding the metal columns with the ceramic substrate; and etching the metal layer. According to the novel semiconductor test probe packaging process provided by the invention, the process flow is simplified, and the productivity is improved.

A sensor chip structure (600) design based on a solid-state quantum spin sensing system, a manufacturing method, and a supporting related device. The sensor chip structure (600) is a diamond-based magnetic field and temperature sensing chip manufactured on the basis of a micro-nano processing technique, and comprises: a microwave radiation structure, a diamond NV center material, a laser diode, a heat dissipation structure, an optical filter (7), and a photodetector (6) which are manufactured on an insulating substrate.

The invention discloses a laser-induced fusion atomic layer deposition method for a flexible graphene sensing electrode, which belongs to the field of micro-nano manufacturing and specifically comprises four procedures of laser induction, three-dimensional atomic layer deposition, flexible transfer printing and electrode assembly. Firstly, three-dimensional porous graphene grows on a polyimide film through laser induction, and then a gas-phase precursor is allowed to alternately enter a porous graphene framework and be continuously deposited on hole walls by utilizing the self-limiting layer-by-layer growth characteristic of atomic layer deposition, so that a conductive metal atomic layer covering in a full-step manner is formed; and finally, through liquid silica gel pouring-curing stripping, transferring the porous graphene / metal atomic layer to a flexible substrate, and carrying out electrode packaging. The nano-scale metal atomic layers are in interface contact / disconnection, the micron-scale graphene framework is in bridge connection with the atomic layers at the interface, the functions are different and have complementary advantages, the piezoresistive synergistic effect is contributed under the micro-nano scale, and the sensitivity and the response range of the flexible graphene-based sensing electrode are remarkably enhanced.

The invention discloses a manual bonding platform, and relates to the technical field of MEMS chip manufacturing. Comprising a Z-direction electric lifting table, a Y-direction electric linear displacement sliding table, an X-direction electric linear displacement sliding table, a voltage source, a displacement table driver, a chip holder, a grid baffle, a supporting rod, a heat insulation plate and a heat source. The Y-direction electric linear displacement sliding table is installed on the Z-direction electric lifting table, the X-direction electric linear displacement sliding table is installed on the Y-direction electric linear displacement sliding table, the heat insulation plate is placed on the X-direction electric linear displacement sliding table, the heat source is arranged on the heat insulation plate, and the lower chip is placed on the heat source. The supporting rod is fixedly installed on the table top, and the grid baffle and the chip clamping device are fixedly connected with the supporting rod. The moving sliding tables in the three directions are all electrically connected with the displacement table driver, and the heat source is electrically connected with the voltage source. According to the invention, the small-area bonding of the chip is realized, and a new solution thought is provided for the MEMS chip manufacturing field, especially the chip bonding direction.

The invention provides a lead bonding and packaging device and a lead bonding and packaging method for a key process for packaging a deep cavity lead of an immersion type miniature liquid pressure sensor. The lead bonding packaging equipment comprises a rack, a movement mechanism mounting plate, an X-axis movement mechanism, a Y-axis movement mechanism, a first Z-axis movement mechanism and a second Z-axis movement mechanism, the movement mechanism mounting plate, the X-axis movement mechanism, the Y-axis movement mechanism, the first Z-axis movement mechanism and the second Z-axis movement mechanism are all mounted on the rack, a clamping mechanism is mounted on the X-axis movement mechanism or the Y-axis movement mechanism, and a visual microscopic mechanism is mounted on the first Z-axis movement mechanism. And a chopper positioning mechanism is mounted on the second Z-axis movement mechanism. According to the technical scheme provided by the invention, the alignment accuracy and stability in the wire leading process can be ensured, the yield and consistency of deep cavity bonding are improved, manual intervention and operation errors are reduced, automation of the wire bonding process is realized, the bonding precision and stability are improved, and the method has relatively high practicability and popularization value.