2491results about "Microelectromechanical systems" patented technology

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

The invention discloses an MEMS thermal flow sensor based on a glass film structure and a preparation method of the MEMS thermal flow sensor. The sensor comprises a glass inner silicon substrate, a back cavity, a silicon through column, a heating resistor, a temperature measurement resistor, an environment temperature measurement resistor, a chromium adhesion layer, a PAD port and a silicon nitride protection layer. Wherein the heating resistor is located in the center, and the temperature measuring resistors are symmetrically distributed on two sides of the heating resistor; the back cavity is located on the back of the glass inner silicon substrate, and the heating resistor, the temperature measuring resistor and the environment temperature measuring resistor lead a PAD port to the back of the glass inner silicon substrate through a silicon through column. A thermal temperature difference principle is adopted, and upstream and downstream temperature measuring resistors form a Wheatstone bridge. When the flow velocity is not zero, the Wheatstone bridge outputs, and the larger the flow velocity is, the larger the output is. Based on the glass and silicon composite substrate, the suspension film structure is formed through the silicon etching process, transmission of heat to the substrate is greatly reduced, and the heat utilization rate is increased.

The present disclosure relates to a MEMS inertial sensor device in a semiconductor chip package that includes an integrated circuit configured to process inertial sensor data. Preferred implementations utilize inertial sensors having different sensitivity ranges to adjust operation of dynamic system control such as motion and or attitude control of autonomous vehicles.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

A cooling system is described. The cooling system includes a cooling element and a support structure. The cooling element is configured to undergo vibrational motion when actuated to drive a fluid toward a heat-generating structure. The cooling element includes a piezoelectric structure including a substrate having a first side and a second side opposite to the first side. A first piezoelectric layer is on the first side. A second piezoelectric layer is on the second side. The support structure is coupled to the cooling element and configured to support the cooling element.

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

The present disclosure, in some embodiments, relates to a MEMS (Microelectromechanical systems) structure. The MEMS structure includes a first comb structure having a first plurality of comb fingers extending outward from a first branch. A second comb structure has a second plurality of comb fingers extending outward from a second branch. The first plurality of comb fingers are laterally interleaved between the second plurality of comb fingers. The first plurality of comb fingers respectively include a weighted core material and one or more peripheral materials. The weighted core material has a larger density than the one or more peripheral materials.

The present invention features a micrometer-scale torsion balance device comprising a rigid mass and two or more nanoribbons attached to the rigid mass. The rigid mass may be suspended by the two or more nanoribbons. The two or more nanoribbons may be placed under tensile stress. A local acceleration value may be derived from a torsional stiffness of the two or more nanoribbons. In some embodiments, the rigid mass may comprise silicon. In some embodiments, the two or more nanoribbons may comprise silicon nitride. In some embodiments, the rigid mass may have a polygon shape, the polygon shape having four or more sides. A side of the four or more sides may be longer than all others.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

The MEMS triaxial accelerometer with the self-checking function comprises a cap layer, a structural layer and a substrate layer, the structural layer is clamped and packaged between the cap layer and the substrate layer, the structural layer comprises an X-axis acceleration detection array, a Z-axis acceleration detection array and a Y-axis acceleration detection array which have the self-checking function, and the X-axis acceleration detection array, the Z-axis acceleration detection array and the Y-axis acceleration detection array have the self-checking function. A Z-axis sensitive structure release groove is formed in the middle of the structural layer, the Z-axis acceleration detection array can move in the Z-axis direction along the Z-axis sensitive structure release groove, an X-axis sensitive structure release groove is formed in one side of the Z-axis acceleration detection array, and the X-axis acceleration detection array can move in the X-axis direction along the X-axis sensitive structure release groove. A Y-axis sensitive structure release groove is formed in the other side of the Z-axis acceleration detection array, and the Y-axis acceleration detection array can move in the Y-axis direction along the Y-axis sensitive structure release groove. The accelerometer provided by the invention has a self-checking function, can apply known signals, and is used for detecting the response of the sensor under different working conditions.

A micro-electrical-mechanical-system (MEMS) switching device including a first MEMS switch having a first and second terminal, and a second MEMS switch having a third and fourth terminal. The device also includes first and second input conductors, and first and second output conductors. The first input conductor electrically connects the second terminal to the third terminal. The second input conductor electrically connects an input port to the first input conductor. The first output conductor electrically connects a first output port to the first terminal. The second output conductor electrically connects a second output port to the fourth terminal. A first path from the input port to the first output port, and a second path from the input port to the second output port, have substantially identical electrical characteristics.

The invention provides an MEMS (Micro Electro Mechanical System) micromirror array chip, a module and optical scanning equipment. The MEMS micromirror array chip comprises a plurality of micromirror structures, a substrate, a vertical lead structure and a capacitance angle sensing structure, according to the micro-mirror array chip integrated with the capacitive sensor, array-level real-time angle detection, feedback control and high-precision scanning angle detection are realized, and the micro-mirror array chip is fast in driving and resistant to interference; meanwhile, the wiring density is reduced by frequency division multiplexing isolation signals; in addition, the application of a monolithic integrated capacitance angle sensor in a high-density micro-mirror array chip is realized by a thick substrate with a silicon through hole; and finally, the micromirror array chip of the monolithic integrated capacitance angle sensor is used for precision optical scanning equipment, a photoelectric angle detector is omitted, optical scanning high-precision real-time angle detection and feedback control, high-precision angle detection and high-speed scanning are realized, the use design is convenient, and the cost is low.

A piezoelectric microelectromechanical system microphone comprises a support substrate, a piezoelectric element configured to deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric element, the piezoelectric element attached to the support substrate about a portion of a perimeter of the piezoelectric element, a sensing electrode disposed on the piezoelectric element and configured to sense the electrical potential, and slits defined in the piezoelectric element about the perimeter of the piezoelectric element, the slits defining a plurality of partial anchors securing the piezoelectric element to the support substrate to improve sensitivity of the piezoelectric microelectromechanical system microphone.

A method of fabricating nanostructured silicon on a substrate comprises a step of conducting a catalytic chemical vapor deposition using a Si-containing precursor and a carrier gas to generate on the substrate a silicon layer comprising columnar polycrystalline silicon structures and amorphous silicon containing material therebetween. The method further comprises conducting an anisotropic etching process of the silicon layer to remove the silicon between the polycrystalline silicon columns in order to fabricate the nanostructured silicon on the substrate.

The invention relates to an MEMS (Micro Electro Mechanical System) packaging method. The method comprises the following steps of S1, bonding a device layer wafer on a substrate; s2, etching the device layer wafer to obtain an acceleration sensor structure and a gyroscope structure; s3, in a nitrogen atmosphere, pre-bonding an upper cover plate on the acceleration sensor structure and the gyroscope structure, so that an acceleration sensor structure cavity and a gyroscope structure cavity between the upper cover plate and the substrate are filled with nitrogen; and S4, eliminating nitrogen in the cavity of the gyroscope structure, and bonding the acceleration sensor structure and the gyroscope structure on the upper cover plate to obtain the gyroscope structure vacuum chamber. The acceleration sensor chip and the gyroscope chip are prepared on one substrate through MEMS packaging, the preparation process is shortened, the manufacturing period and cost of the MEMS chips are reduced, combined packaging of the two chips is achieved through combined nesting of different types of MEMS packaging modes, and the packaging efficiency is improved. The packaging volume is reduced, and the space utilization rate and the integration capability are improved.

The invention discloses a biaxial silicon micro-accelerometer based on a three-degree-of-freedom weak coupling resonator, and belongs to the technical field of micro-electro-mechanical systems and microfluid measurement. Comprising a glass base and a silicon micromechanical sensor, the center of the glass base is provided with a protruding common anchor point, the silicon micromechanical sensor is connected to the glass base through the common anchor point, and signal electrodes for transmitting signals are distributed on the glass base; the silicon micromechanical sensor comprises a stress base and resonance modules; the stress base is mounted on the glass base, and the resonance modules arranged in a Y shape are arranged on the stress base; the Y-shaped head of the resonance module is provided with a pair of resonators which are perpendicular to each other and are used for detecting acceleration in the horizontal direction and acceleration in the vertical direction respectively. The stability and the measurement accuracy of the biaxial accelerometer are further improved by arranging a resonator arrangement mode of a stable structure and cooperating with the mechanical stable design of the amplification unit and the safety structure.

Disclosed are a vibration sensor, an electronic device and a vibration detection method. The vibration sensor comprises a circuit board assembly, a housing, a chip assembly, a vibration-pickup assembly and a through-hole. A back cavity is formed inside the circuit board assembly, the housing is mounted over the circuit board assembly, and the chip assembly is provided on a side of the circuit board assembly proximate to the housing and is electrically connected to the circuit board assembly. The vibration-pickup assembly is provided inside the cavity and dividing the cavity into a first cavity and a second cavity. The through-hole of the vibration sensor may be in communication with the back cavity and the second cavity.

An accelerometer includes a housing, a proof mass assembly encased in the housing, and one or more heating elements configured to heat the proof mass assembly in response to an electrical current. The one or more heating elements include a positive temperature coefficient of resistance (PTC) material. The PTC material exhibits a relatively high increase in resistance above a threshold temperature. For example, a ratio of the resistance of the PTC material above the threshold temperature to the resistance of the PTC material at room temperature (PTC ratio) is greater than five.

Embedded sensor structures and stretchable embedded sensor films including a plurality of embedded sensor packages are described. An embedded sensor structure may include a sensor package including an integrated circuit (IC) die and sensor die bonded to a front side of the IC die, with the sensor die including a diaphragm that is deflectable toward a cavity. A planarization layer laterally surrounds the sensor package, and metal routing is formed on a top side of the sensor die and spanning over the planarization layer. Other aspects are also described and claimed.

An airflow generating package includes a base, a covering structure and a film structure. The film structure is disposed between the base and the covering structure, and includes a flap pair including a first flap and a second flap. The flap pair operates at an ultrasonic rate so that the airflow generating package produces an airflow. A first air opening is formed on the covering structure.

The invention provides a liquid drop continuous generation device which comprises a first flow channel and a second flow channel, the first flow channel and the second flow channel comprise first positions which are tightly attached to each other, and each first position comprises a through hole communicating with the first flow channel and the second flow channel; the first flow channel and the second flow channel are used for introducing a first liquid and a second liquid respectively; the special ultrasonic device can act on the first liquid in the first flow channel, when the special ultrasonic device is driven in a first power period, an acoustic beam current facing the through hole is generated in the first liquid, the acoustic beam current enters the second liquid through the through hole, and liquid drops formed by the first liquid are formed in the second liquid. The invention also correspondingly provides a method for continuously generating liquid drops. The liquid drop generation mode is more flexible, the controllability is higher, and the cost is lower.

A MEMS AE transducer system is provided that takes advantage of the low power consumption and lightweight characteristics of MEMS AE transducers, while also achieving higher sensing sensitivity. To address the problem of low sensitivity typically associated with MEMS AE transducers, electrical responses of multiple MEMS AE transducers operating at different frequency ranges are combined to increase the bandwidth and sensitivity of the MEMS AE transducer system. As the frequencies are constructive, the combined response on a single channel is the actual summation of two signals with an improved signal to noise ratio. Additionally, each frequency can be decomposed because they are well separated from each other due to the super narrowband response and high Quality factor of MEMS AE transducers.

The invention belongs to the field of MEMS sensors, and discloses a high-temperature-resistant MEMS pressure sensor chip and a packaging structure thereof. The chip is provided with an SOI substrate, an AlN layer and a SiO2 layer from bottom to top, a plurality of P-type piezoresistors are arranged on the uppermost layer of the SOI substrate and are symmetrically distributed at the stress concentration position of the edge of the elastic diaphragm; a channel which continuously penetrates through the AlN layer and the SiO2 layer is arranged above the P-type piezoresistor; a metal Pad is arranged in the channel; the upper end of the metal Pad is located on the uppermost layer of the high-temperature-resistant MEMS pressure sensor chip, and the lower end of the metal Pad is in contact with the P-type piezoresistor. According to the invention, the relatively thick buried oxide layer can resist a high-temperature severe environment, and an AlN heat dissipation material with a high heat conductivity coefficient is deposited, so that rapid heat dissipation at a high temperature is ensured; and meanwhile, the stability and the reliability of the sensor are improved by adopting leadless packaging, and the packaging density is further optimized.

A torsional micro-electro-mechanical systems (MEMS) mirror module provides for thermally-stable ancillary modes of mirror oscillation (e.g., vertical, horizontal, and rocking) by utilizing MEMS die packaging techniques that implement a cantilevered (i.e., fixed-free) die package in which one end of the die is partially fixedly-attached to a die carrier substrate while the non-attached end of the die is free from the die carrier substrate and unsupported. The cantilevered die package with fixed-free architecture effectively decouples the effects of coefficient of thermal expansion (CTE) mismatch of the MEMS die, die-bond adhesive, and die carrier substrate on temperature-dependent MEMS flexure stress. Ancillary mode oscillation frequencies changes with temperatures are thus limited to a smaller range relative to those experienced with conventional package designs.

The invention belongs to the technical field of MEMS resonance sensors, and particularly relates to a real-time liquid flow rate monitoring sensor and method based on an MEMS plane resonance technology. Wherein the fan-shaped sensing plate is an arc plate, a central supporting beam is arranged at the rear end of the middle part of a small arc-shaped edge of the fan-shaped sensing plate, an electrothermal resonance excitation thin beam and a piezoresistive frequency reading thin beam are arranged on the left side and the right side of the fan-shaped sensing plate, and an electrothermal excitation resistor is embedded in the electrothermal resonance excitation thin beam; a piezoresistor is embedded in the piezoresistive frequency reading thin beam; according to the invention, the MEMS resonance technology is applied to the micro flow channel, and the high-precision measurement of the flow velocity of the fluid is realized through the frequency deviation characteristic of the torsional mode resonance generated by electromagnetic excitation under the action of the fluid.

The invention discloses a tactile sensor based on TSV switching, and belongs to the technical field of tactile sensors, the tactile sensor comprises three main body parts of an MEMS device, a TSV device and an ASIC device, and the tactile sensor is realized through an MEMS-ASIC wafer level integration method, the electrical intercommunication between the MEMS and the ASIC is realized through TSV switching, the signal integrity is enhanced, the electromagnetic interference is reduced, and the tactile sensor can be applied to the field of tactile sensors. And the reliability of the MEMS tactile sensor is improved. Transfer of part of the lead and the Pad is achieved through TSV switching, signal output and reading of the MEMS tactile sensor are facilitated, meanwhile, layout design is simplified, and process difficulty is lowered.

A semiconductor structure and a microfluidic system comprising the semiconductor structure are disclosed. The semiconductor structure comprises a thermoelement layer. The thermoelement layer comprises p- and n-type thermoelements. These thermoelements form regions wherein respective region is associated with a specific temperature range, where achieving the specific temperature range is based on an electron or hole current flowing through the thermoelements. The semiconductor structure forms part of the microfluidic system comprising a microfluidic channel having a meander extension across regions having different temperature ranges. This allows a fluid flowing in the microfluidic channel being exposable to cyclic temperature variations.

The invention relates to the technical field of pressure sensors, and discloses a piezoresistive multi-range MEMS pressure sensor and a processing method thereof. The piezoresistive multi-range MEMS pressure sensor comprises: a pressed diaphragm; the mass blocks comprise a central mass block and a fixed mass block; the insulating layer is clamped between the pressed diaphragm and the mass block; the piezoresistor is arranged on one side, deviating from the mass block, of the pressed diaphragm; the at least two supporting frames are located in the pressure groove, each supporting frame surrounds the center mass block and is spaced from the center mass block, the supporting frame adjacent to the center mass block is connected with the center mass block through a first connecting beam, and the supporting frame adjacent to the fixed mass block is connected with the fixed mass block through a second connecting beam; every two adjacent supporting frames are connected through a third connecting beam. The piezoresistive multi-range MEMS pressure sensor disclosed by the invention is simple in structure and easy to process, and not only realizes multi-range acting force detection, but also realizes micro-range high overload measurement.

An airflow generating device includes a first cell and a second cell. The first cell is disposed within a first region and generates a first air pressure with a first polarity. The second cell is disposed within a second region and generates a second air pressure with a second polarity. The second polarity is opposite to the first polarity.

A microelectronic socket structure and a method of forming the same. The socket structure comprises: a socket structure housing defining a cavity therein; and an interconnection structure including: a contact element disposed at least in part within the cavity, and configured to be electrically coupled to a corresponding microelectronic package, the contact element corresponding to one of a signal contact element or a ground contact element; and a conductive structure disposed at least in part within the cavity, electrically coupled to the contact element, and having an outer contour that is non-conformal with respect to an outer contour of the contact element.