1629results about "Microelectromechanical systems" patented technology

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The present disclosure, in some embodiments, relates to a MEMS (Microelectromechanical systems) structure. The MEMS structure includes a first comb structure having a first plurality of comb fingers extending outward from a first branch. A second comb structure has a second plurality of comb fingers extending outward from a second branch. The first plurality of comb fingers are laterally interleaved between the second plurality of comb fingers. The first plurality of comb fingers respectively include a weighted core material and one or more peripheral materials. The weighted core material has a larger density than the one or more peripheral materials.

The invention provides an MEMS (Micro Electro Mechanical System) micromirror array chip, a module and optical scanning equipment. The MEMS micromirror array chip comprises a plurality of micromirror structures, a substrate, a vertical lead structure and a capacitance angle sensing structure, according to the micro-mirror array chip integrated with the capacitive sensor, array-level real-time angle detection, feedback control and high-precision scanning angle detection are realized, and the micro-mirror array chip is fast in driving and resistant to interference; meanwhile, the wiring density is reduced by frequency division multiplexing isolation signals; in addition, the application of a monolithic integrated capacitance angle sensor in a high-density micro-mirror array chip is realized by a thick substrate with a silicon through hole; and finally, the micromirror array chip of the monolithic integrated capacitance angle sensor is used for precision optical scanning equipment, a photoelectric angle detector is omitted, optical scanning high-precision real-time angle detection and feedback control, high-precision angle detection and high-speed scanning are realized, the use design is convenient, and the cost is low.

An accelerometer includes a housing, a proof mass assembly encased in the housing, and one or more heating elements configured to heat the proof mass assembly in response to an electrical current. The one or more heating elements include a positive temperature coefficient of resistance (PTC) material. The PTC material exhibits a relatively high increase in resistance above a threshold temperature. For example, a ratio of the resistance of the PTC material above the threshold temperature to the resistance of the PTC material at room temperature (PTC ratio) is greater than five.

The invention relates to the technical field of pressure sensors, and discloses a piezoresistive multi-range MEMS pressure sensor and a processing method thereof. The piezoresistive multi-range MEMS pressure sensor comprises: a pressed diaphragm; the mass blocks comprise a central mass block and a fixed mass block; the insulating layer is clamped between the pressed diaphragm and the mass block; the piezoresistor is arranged on one side, deviating from the mass block, of the pressed diaphragm; the at least two supporting frames are located in the pressure groove, each supporting frame surrounds the center mass block and is spaced from the center mass block, the supporting frame adjacent to the center mass block is connected with the center mass block through a first connecting beam, and the supporting frame adjacent to the fixed mass block is connected with the fixed mass block through a second connecting beam; every two adjacent supporting frames are connected through a third connecting beam. The piezoresistive multi-range MEMS pressure sensor disclosed by the invention is simple in structure and easy to process, and not only realizes multi-range acting force detection, but also realizes micro-range high overload measurement.

An airflow generating device includes a first cell and a second cell. The first cell is disposed within a first region and generates a first air pressure with a first polarity. The second cell is disposed within a second region and generates a second air pressure with a second polarity. The second polarity is opposite to the first polarity.

The invention belongs to the technical field of integrated circuit design, and particularly relates to a flexible thermoelectric flow velocity sensor for surface flow field monitoring, which comprises a flexible substrate, and a central heating circuit and a thermopile arranged on the flexible substrate, wherein the thermopile surrounds the periphery of the heating circuit, and a thermoelectric junction close to the heating circuit and a thermoelectric junction far away from the heating circuit are formed. The structure of the central heating circuit and the surrounding thermopile is adopted, the temperature difference output voltage generated by the heating circuit and the flow field is utilized to measure the flow velocity, and the use scene of the sensor is expanded through the arrangement of the flexible substrate.

A microelectromechanical electrostatic actuator is provided that includes a first layer and a second layer, a first set of comb fingers in the first layer aligned with a second set of comb finger in the second layer. In this aspect, the x-direction width of the comb fingers of the first set is tapered along the vertical direction, such that an electrostatic force between comb fingers is increased by tapering to thereby lower a required actuation voltage.

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

MEMS pressure transducer (1) including: a semiconductor body (2); a lower dielectric region (4,6), arranged above the semiconductor body (2); a fixed electrode region (12) and a lower anchoring region (14), which are formed by conductive material, are arranged on the lower dielectric region (4,6) and are laterally separated from each other; a membrane (55) of conductive material, which is suspended above the fixed electrode region (12), so as to delimit a cavity (39) upwardly, the fixed electrode region (12) facing the cavity, the membrane (55) being deformable as a function of pressure and forming a variable capacitor together with the fixed electrode region (12); and an upper anchoring region (37") of conductive material, which laterally delimits the cavity (39) and is interposed, in direct contact, between the membrane (55) and the lower anchoring region (14).

MEMS device (10) with a movable displacement element (12) and a drive device (14) for driving the movable displacement element (12), wherein the drive device (14) has at least one drive electrode (16), characterized in that the drive electrode (16) is segmented and at least one functional electrode (18) is provided for measuring the deflection of the displacement element (12).

A method for producing a nanochannel (200) is described with the following steps a) depositing a nanochannel sacrificial layer (3) using an ALD process on a substrate (1), which defines the subsequent channel height at least at one point b) depositing a first covering layer (4) on the nanochannel sacrificial layer (3) c) At least partially structuring and / or etching the nanochannel sacrificial layer (3) and the first cover layer (4) so ​​that a first exposed region (10) is formed d) At least partial etching of the now exposed nanochannel sacrificial layer (3) with an etching rate < 100nm / min, preferably <10nm / min, and particularly preferably <5nm / min and even more preferably <2nm / min, so that an under-etched second exposed region (20) is formed which defines the channel width e) depositing a second cover layer (5) onto the first cover layer (4) and the first exposed region (10) so that the second exposed region (20) is sealed and forms a nanochannel (200).

The present application relates to an abnormal signal detection device using a dual acoustic wave sensor. The abnormal signal detection device using a dual acoustic wave sensor comprises: a housing including a first acoustic wave transmission portion and a second acoustic wave transmission portion; a base substrate located inside the housing and including a first surface and a second surface; a first acoustic wave sensor mounted on the first surface and converting an acoustic wave in a first band into a first electrical signal; a second acoustic wave sensor mounted on the second surface and converting an acoustic wave in a second band into a second electrical signal.

Aspects of transducers with feedback transduction are described. One aspect is a transducer system comprising an operational amplifier having an inverting input, a non-inverting input, and an output. The transducer system also includes a piezoelectric microelectromechanical system (MEMS) transducer having a first node and a second node, wherein the first node is coupled to the inverting input of the operational amplifier, and wherein the piezoelectric MEMS transducer is configured to generate an electrical signal across the first node and the second node in response to a signal incident upon the piezoelectric MEMS transducer. The transducer system also includes an attenuator having an input and an output, wherein the input of the attenuator is coupled to the output of the operational amplifier, and wherein the output of the attenuator is coupled to the second node of the piezoelectric MEMS transducer.

A MEMS audio device includes a first wafer having a top with a first cavity and a bottom with a vent hole coupled to the first cavity, wherein the bottom having first contacts, a second wafer disposed upon the first wafer having a flexible material layer disposed above the first cavity, a third wafer disposed upon the second wafer having physical contacts coupled to the second wafer, wherein the third wafer includes a second cavity disposed above the flexible material layer, a wiring wafer disposed below the first wafer having a second vent hole coupled to the first cavity, wherein the wiring wafer having second contacts coupled to the first contacts, and wherein the flexible material layer forms a diaphragm for the MEMS audio device.

The invention provides a capacitive MEMS device and a manufacturing method thereof. The capacitive MEMS device comprises at least one MEMS chip, each MEMS chip comprises a wafer substrate and a structural layer arranged on the top surface of the wafer substrate, and a first cavity structure is formed in the wafer substrate. The structural layer covers the first cavity structure and comprises a vibrating diaphragm fixed on the top surface of the wafer substrate and a back polar plate which is fixed on the wafer substrate and is spaced from the vibrating diaphragm to form a capacitor, the bottom surface of the wafer substrate is provided with a groove structure which is sunken towards the direction of the structural layer, and the groove structure partially penetrates through the wafer substrate; the first cavity structure penetrates through the groove bottom of the groove structure and the top surface of the wafer substrate along a first direction; the groove structure and the first cavity structure jointly form an air flowing channel, and the groove structure is communicated with the first cavity structure and the outside of the MEMS chip. According to the capacitive MEMS device, balance control over the air pressure in the device is achieved, and the influence of the air pressure on the capacitive MEMS device is avoided.

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

One aspect of the present disclosure pertains to a device. The device includes a substrate, a logic circuit disposed on the substrate, and a nanoelectromechanical systems (NEMS) device electrically connected to the logic circuit and formed on the substrate. The NEMS device includes a first electrode electrically connected to the logic circuit, a second electrode electrically connected to a first power supply, a movable feature electrically connected to the second electrode, and a control electrode operable to move the movable feature relative to the first electrode.

A method for manufacturing a microelectromechanical systems (MEMS) microphone comprises depositing a membrane on a first sacrificial layer, wherein the first sacrificial layer is deposited on a substrate, etching the substrate to define a cavity, releasing the membrane by removing at least the first sacrificial layer, and forming at least one anchor at the edge of the membrane.

The present disclosure relates to a method of manufacturing a layered structure for a MEMS apparatus, a layered structure manufactured by the method, and a MEMS apparatus 200 (300, 400, 500) comprising the layered structure. For the layered structure, a high-temperature curing step is provided in the manufacturing process, for example, after structuring the functional layer 3. The structured regions and trenches of the functional layer 3 and in particular the spring structure formed in the functional layer 3 have smoothened side walls and / or rounded corners in regions 3a after the curing step, so that their fracture limits can thus be increased and early fractures of the functional layer 3 during operation of the MEMS apparatus 200 (300, 400, 500) can be avoided.

The invention relates to the field of semiconductor MEMS (Micro Electro Mechanical System) devices, and discloses a medium-high-entropy alloy air suction target material which is composed of a main element A, an element C and an element B. The content of the main element A is 25-40 at%, the content of the element B is 30-45 at%, and the content of the element C is 30-45 at%; the formula equation is as follows: A < 25-40 > B < 30-45 > C < 30-45 >; the main element A is selected from one or two of V and Co; the element C is selected from one or more of Fe, Pr, Y, Gd, Nd, Er, Sm and Ce. And the element B is selected from one or two of Ti and Zr. According to the invention, the problem of serious contradiction between the air suction performance and the mechanical property of the current semiconductor MEMS sensor packaging material is solved by utilizing the advantages of rich or multi-principal-element alloy, high mixing entropy and the like in the medium-high-entropy alloy.

The invention relates to an element (100) for use in a micro-electro-mechanical system (200), in particular for use in semiconductor technology equipment, and to a micro-electro-mechanical system (200) comprising such an element (100). The element (100) comprises a MEMS structure (101) and at least one coating (140) applied over a large area to designated partial surfaces (135, 155) of the MEMS structure (101) from one side of the element (100), wherein the MEMS structure (100) has at least one otherwise non-functional special shape (160) with which at least a continuous parasitic coating (145) is avoided for certain areas away from the designated partial surfaces (135, 155).

Encapsulated MEMS devices and methods of fabrication with wafer-level fabrication processes are described which address small molecule diffusion into hermetically sealed cavities. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed during a back-end-of-the-line (BEOL) processing over a cap wafer including a planarized surface formed during a via reveal griding operation. In some configurations a small molecule barrier layer is not formed over the planarized surface during BEOL processing in order to allow an escape path for small molecules. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed on a bottom side of a cap wafer prior to bonding the cap wafer to a device wafer during wafer-level fabrication.

The present disclosure is drawn to inertial pumps. An inertial pump can include a microfluidic channel, a fluid actuator located in the microfluidic channel, and a check valve located in the microfluidic channel. The check valve can include a moveable valve element, a narrowed channel segment located upstream of the moveable valve element, and a blocking element formed in the microfluidic channel downstream of the moveable valve element. The narrowed channel segment can have a width less than a width of the moveable valve element so that the moveable valve element can block fluid flow through the check valve when the moveable valve element is positioned in the narrowed channel segment. The blocking element can be configured such that the blocking element constrains the moveable valve element within the check valve while also allowing fluid flow when the moveable valve element is positioned against the blocking element.

The technology described herein is directed towards a reconfigurable intelligent surface (RIS) based on microelectromechanical systems (MEMS) technology, in which MEMS micro-actuators are integrated into unit cells of the RIS. A ring-shaped cantilever, resulting from unit cell fabrication, operates as an electrothermal actuator in the unit cell's resonating pattern. A controlled voltage is applied to the ring-shaped cantilever, deforming (bending up) the metal (e.g., aluminum) ring at its non-anchored (free) portion from its relatively straight non-actuated state via joule heating. The amount of vertical displacement of the free portion of the ring when voltage is applied changes the structure of the unit cell's geometry based on the amount of voltage, whereby analog-like tuning of the unit cell's characteristics (including phase shift) is obtained. When combined with the voltage-controlled phase shifts of other unit cells of the RIS, beamforming of a reflected incoming electromagnetic wave is achieved.

The invention relates to a micro-electro-mechanically movable element (103) for use in a micro-electro-mechanical system (100) and a corresponding micro-electro-mechanical system (100), in particular for use in semiconductor technology equipment. The micro-electro-mechanically movable element (103) comprises a base plate (104) on the side of which facing away from the base structure (101) a mirror plate (105) with a curvature geometry is arranged, wherein the mirror plate (105) is connected to the base plate (104) via a pedestal (106), wherein the geometry of the contact points (107, 108) between pedestal (106) and mirror plate (105) as well as between pedestal (106) and base plate (104) are different. The micro-electro-mechanical system (100) comprises an element (103) that is micro-electro-mechanically movable at least in at least one degree of freedom relative to a basic structure (101) by at least one actuator (102), wherein the micro-electro-mechanically movable element (103) is designed according to the invention.

An actuator of a micro-electromechanical system (MEMS) includes a semiconductor substrate. The actuator includes an array of micromechanical arms disposed over the semiconductor substrate. The actuator includes a first capping member disposed over the micromechanical arms. The actuator includes a second capping member disposed opposite the first capping member such that the micromechanical arms extend between the first capping member and the second capping member along a vertical direction.