4862results about "Microelectromechanical systems" patented technology

A Light Detection and Ranging (LiDAR) system, comprising: a light emitting unit comprising a light source comprising one or more laser emitters for generating one or more laser beams for producing reflected photons off of a target; a scanning unit comprising a Micro-Electro-Mechanical Systems (MEMS) mirror for changing an outgoing direction of the one or more laser beams; a light receiving unit comprising a MEMS mirror array and a plurality of photon detectors, the MEMS mirror array being configured to deflect the reflected photons to the plurality of photon detectors; and a control system for controlling the LiDAR system, the control system being configured to adjust the MEMS mirror and the MEMS mirror array.

Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a vertical spark gap device includes a substrate having a horizontal main surface, a first conductive layer and a second conductive layer each extending over the substrate and substantially parallel to the horizontal main surface while being separated in a vertical direction crossing the horizontal main surface. One of the first and second conductive layers is electrically connected to a first voltage node and the other of the first and second conductive layers is electrically connected to a second voltage node. The first and second conductive layers serve as one or more arcing electrode pairs and have overlapping portions configured to generate one or more arc discharges extending generally in the vertical direction in response to an EOS voltage signal received between the first and second voltage nodes.

A system for analyzing measurements performed on a biological subject, the system including one or more processing devices configured to acquire subject data at least in part captured by a measurement system including at least one substrate including a plurality of microstructures configured to breach a functional barrier of the subject and a sensor operatively connected to at least one microstructure, the at least one sensor being configured to measure response signals from the at least one microstructure, and analyze the subject data using at least one model to determine an indicator at least partially indicative of a physiological state of the subject.

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

The invention discloses an MEMS thermal flow sensor based on a glass film structure and a preparation method of the MEMS thermal flow sensor. The sensor comprises a glass inner silicon substrate, a back cavity, a silicon through column, a heating resistor, a temperature measurement resistor, an environment temperature measurement resistor, a chromium adhesion layer, a PAD port and a silicon nitride protection layer. Wherein the heating resistor is located in the center, and the temperature measuring resistors are symmetrically distributed on two sides of the heating resistor; the back cavity is located on the back of the glass inner silicon substrate, and the heating resistor, the temperature measuring resistor and the environment temperature measuring resistor lead a PAD port to the back of the glass inner silicon substrate through a silicon through column. A thermal temperature difference principle is adopted, and upstream and downstream temperature measuring resistors form a Wheatstone bridge. When the flow velocity is not zero, the Wheatstone bridge outputs, and the larger the flow velocity is, the larger the output is. Based on the glass and silicon composite substrate, the suspension film structure is formed through the silicon etching process, transmission of heat to the substrate is greatly reduced, and the heat utilization rate is increased.

The invention provides a preparation method of an island and beam film structure micro differential pressure sensor with an IC (Integrated Circuit), which comprises the following steps: arranging an N-type buried layer, a P-type buried layer and an island film structure on an SOI (Silicon On Insulator) silicon wafer, then connecting the SOI silicon wafer with a double-parabolic silicon wafer, and arranging a medium isolation groove, an N-type buried layer connecting region, a P well, a P-type buried layer connecting region, a sensitive resistor, a P-type base region, an N-type base region, an N-type emitter region and a P-type emitter region on the SOI silicon wafer. According to the invention, the preparation of the complementary bipolar transistor double-buried layer is completed by combining a semiconductor manufacturing technology and an MEMS manufacturing technology under the condition of not using an epitaxial process; the process flow is integrally simplified, and the preparation efficiency is improved.

The invention relates to a hidden ultrasonic sensing system suitable for advanced driver assistance. Exemplary sensor controllers, sensors, sensing systems, and sensing methods that can enable cost-effective implementation of ADAS (Advanced Driver Assistance System) features with hidden sensors. As one example, an exemplary sensing method includes emitting a train of acoustic pulses through a surface on an ultrasonic transducer; receiving the acoustic signal with a MEMS (Micro Electro Mechanical System) microphone, the MEMS microphone representing the acoustic signal as an electrically received signal; and processing the electrical receive signal to detect reflections of the acoustic pulse train.

The present disclosure relates to a MEMS inertial sensor device in a semiconductor chip package that includes an integrated circuit configured to process inertial sensor data. Preferred implementations utilize inertial sensors having different sensitivity ranges to adjust operation of dynamic system control such as motion and or attitude control of autonomous vehicles.

A method of making an acoustic sensor (e.g., a piezoelectric sensor for a piezoelectric microelectromechanical systems microphone) includes forming or depositing one or more piezoelectric layers to define a beam extending between a proximal portion and a distal tip (e.g., unsupported free end), the beam having a width in plan view that is greater at a location distal of the proximal portion than at the proximal portion. The method also comprises attaching the beam to a substrate in cantilever form so that the proximal portion of the beam is anchored to the substrate and the distal tip is a free unsupported end of the beam. One or more electrodes are disposed on or in the proximal portion of the beam.

The present application relates to a micromechanical component (1) and a method for producing a micromechanical component (1). The proposed micromechanical component (1) comprises a layered structure and at least one piezoelectric element (10). The piezoelectric element (10) contains a first electrode (5) and second electrode (27) for generating and / or detecting deflections of a deflection element (16). The deflection element (16) is connected to a holder (17). The layered structure of the micromechanical component (1) comprises a silicon substrate (2), a conductive semiconductor layer (26), a piezoelectric layer (7) and a conductive layer film (12). The conductive semiconductor layer (26) forms the first electrode (5) and the conductive layer film (12) forms the second electrode (27) of the piezoelectric element, wherein the conductive semiconductor layer (26) at the same time forms a carrier layer (28) for the deflection element (16).

The invention belongs to the field of MEMS sensors, and particularly relates to a low-temperature-drift MEMS resonant pressure sensor sensitive chip and a preparation method thereof. Comprising a cap layer, a resonance layer, a pressure sensing layer and an isolation base which are sequentially bonded and connected from top to bottom, the cap layer is provided with an electrode through hole and a vacuum cavity groove, and a getter is sputtered in the vacuum cavity groove; two Si-SiO2 composite resonators and a plurality of lead wire discs are arranged on the resonance layer, and a metal electrode is arranged on each lead wire disc; the number of the metal electrodes is equal to that of the cap layer electrode through holes, and the metal electrodes are located under the electrode through holes; two groups of silicon islands are arranged on the front surface of the pressure sensing layer, and three rectangular sensitive films with the same size are arranged on the back surface; the isolation base is a glass table; according to the invention, the output sensitivity of the sensor is greatly improved, the chip processing complexity is reduced, and the introduction of additional stress and materials is reduced.

A MEMS sensor and a preparation method therefor. The method comprises: forming a first oxide layer on a substrate wafer, performing patterned etching on the first oxide layer, and performing deposition and doping on the first oxide layer that has undergone the patterned etching, so as to form a first polycrystalline silicon layer; performing patterned etching on the first polycrystalline silicon layer to form a wiring, and depositing a second oxide layer on the first polycrystalline silicon layer; upon performing patterned etching on the second oxide layer, performing deposition and doping to form a second polycrystalline silicon layer; performing patterned etching on the second polycrystalline silicon layer to form bonding anchor points and a capacitive plate having a lower height than the bonding anchor points; bonding a device wafer with the bonding anchor points, and performing patterned etching on the device wafer to generate a movable structure, so as to obtain a device layer; and bonding the side of the device wafer distant from the substrate wafer with a cover layer.

A drying implement may include a first portion having a diatomaceous earth slab and a resilient slab covering, and a second portion that is coupled to the first panel. The resilient slab covering may include a mesh of openings that allow water from an article placed on the resilient slab covering to drip through the mesh of openings, onto the diatomaceous earth slab. The second panel may include a plurality of cross pieces that are overmolded with a resilient second covering.

The invention relates to a MEMS sensor (100) comprising: a substrate (40) having a main plane of extension; a vibration mass (60) which is movably suspended in the z-direction (1000) relative to the substrate (40); and a sensor device (90) for detecting a measurement signal dependent on the position of the vibration mass (60). The at least two resonators (10, 11, 12) are suspended in an elastically movable manner relative to the substrate in the z-direction (1000). The actuatable electrode arrangement (30) is designed to resonate each of the at least two resonators (10, 11, 12) in order to generate a mechanical resonant vibration and to capacitively detect an interference variable dependent on at least one resonant frequency of the resonant vibration. The invention also relates to a method for compensating for systematic measurement deviations of a MEMS sensor (100).

Systems, devices, methods, and implementations related to contact detection are described herein. In one aspect, a system is provided. The system includes a first piezoelectric microelectromechanical systems (MEMS) transducer coupled to configured to generate a first analog signal when the first analog signal is transduced from vibrations propagating through the object. The system includes a second piezoelectric MEMS transducer having configured to generate a second analog signal transduced from acoustic vibrations at a location of the object, and classification circuitry coupled to the output of first piezoelectric MEMS transducer and the output of the second piezoelectric MEMS transducer, where the classification circuitry is configured to process data from the first analog signal and data from the second analog signal, and to categorize combinations of the first analog signal and the second analog signal received during one or more time frames.

The invention relates to the field of manufacturing of sensitive elements and sensors in the electronic core industry, in particular to a piezoelectric MEMS acoustic device and a manufacturing method thereof. The device structurally comprises a substrate, an insulating layer, a silicon substrate, a multi-layer composite film structure and a protective layer from bottom to top in sequence, wherein the multi-layer composite film structure is formed by alternately growing electrode layers and piezoelectric layers, and the first layer and the last layer of the multi-layer composite film are the electrode layers; a bonding pad is arranged on the multi-layer composite film structure; the protective layer covers the upper surface of the device; a suspended back cavity structure is arranged between the substrate and the insulating layer; the silicon substrate, the multi-layer composite film structure and the protective layer are connected through an opening communicated with the back cavity; according to the device provided by the invention, the volume of the piezoelectric material is increased mainly by adding the piezoelectric layer, and the energy conversion efficiency of the structure is effectively improved, so that the sensitivity of the transducer is improved.

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The invention discloses an MEMS-based two-dimensional heat conduction type gas sensor and a manufacturing method thereof, and belongs to the technical field, gas molecules in a surrounding environment are heated through a thermopile, and the flow velocity information of gas is converted into electric signal change for measurement through different heat capacity characteristics of the gas molecules, so that the measurement accuracy is improved. The defects of single detection direction, high power consumption, poor measurement precision, low sensitivity, large temperature drift and the like of a low-end thermal conductivity sensor are overcome, the thermal conductivity sensor is adopted, the content of various gases in mixed gas is measured by utilizing different thermal conductivities of various gases, the cost is low, and the sensitivity is high; the silicon-based substrate and the heating resistor assembly enable the sensor to accurately sense gases with different heat conductivities, so that accurate gas detection is provided; the manufacturing process ensures the accuracy of the sensor structure and the manufacturing consistency, and the design and material selection of the sensor enable the sensor to be suitable for various environments and suitable for industrial application.

A cooling system is described. The cooling system includes a cooling element and a support structure. The cooling element is configured to undergo vibrational motion when actuated to drive a fluid toward a heat-generating structure. The cooling element includes a piezoelectric structure including a substrate having a first side and a second side opposite to the first side. A first piezoelectric layer is on the first side. A second piezoelectric layer is on the second side. The support structure is coupled to the cooling element and configured to support the cooling element.

The invention relates to the technical field of uncooled infrared detectors, in particular to an area array type pixel packaging uncooled infrared detector and a preparation method thereof, and the preparation method comprises the steps: dividing a readout circuit substrate into a pixel region and a getter region, preparing a structural cavity, and manufacturing a first release hole and a second release hole in the structural cavity, releasing the sacrificial layer of the structural cavity; the first release hole is shielded, and only the second release hole is opened; a getter coating process is carried out on the structural cavity, and a getter material is deposited to a getter area through a second release hole in an area which is not shielded by the shielding baffle; after the getter of the structural cavity is deposited, the structural cavity shielding baffle is removed, and the first release hole is opened; and plating a hole sealing film on the structural cavity, completing the sealing of the vacuum cavity, and then activating the getter of the structural cavity. According to the invention, the vacuum degree of the detector cavity is ensured, and a powerful guarantee is provided for subsequent performance improvement of the detector.

The invention provides a manufacturing method of an MEMS pressure sensor cavity, and the method comprises the steps: providing a wafer which comprises a chip region and a non-chip region which are formed on a substrate, and the chip region comprises a pressure device formed on the substrate; the manufacturing method of the cavity comprises the steps that S1, a plurality of monitoring areas are formed on a non-chip area on the front face of a wafer, each monitoring area comprises a preset position, a plurality of grooves with preset depths are formed in the vertex of the preset position, and specific materials are arranged at the bottoms in the grooves; s2, etching at the preset position and the corresponding position, mapped to the back surface of the wafer, of the pressure device through a wet etching process to form a cavity, when etching liquid of the wet etching process is in contact with the specific material, etching is stopped, at the moment, the thin film arranged above the cavity is a sensitive film, and the sensitive film is arranged on the back surface of the wafer; the thickness of the sensitive film is the same as the preset depth. According to the invention, the cost is low, and the etching depth of the cavity can be accurately controlled.

An acoustic sensor device includes a substrate, a cavity formed in the substrate, and a microelectromechanical system (MEMS) transducer having a diaphragm supported by the substrate. The diaphragm includes a first portion configured to be fixed to the substrate and a second portion extending from the first portion and suspended over the cavity. The second portion is configured to vibrate when the MEMS transducer is subject to an external stimulus. The diaphragm also includes an anchor portion that attaches the first portion of the diaphragm to the substrate on at least two sides of the substrate such that an interface between the first portion of the diaphragm and the second portion of the diaphragm is moved away from an edge of the substrate along the cavity.

To provide a method for manufacturing a watch gear capable of connecting a connection part to a gear even when an interval between the teeth of the gear is small, a plate-like member, a watch gear and a watch.SOLUTION: A method for manufacturing a gear 50 comprises: an outer shape forming process in which by etching a silicon wafer 70 made of a brittle material, a gear 50 having a plurality of teeth 51, a frame part 55 arranged on the outside of the gear 50, and a connection part 56 having higher flexibility than the teeth 51 and connecting the frame part 55 and the tip part of the teeth 51 are formed; and a cutting process of cutting off the connection part 56 from the gear 50.SELECTED DRAWING: Figure 4

An acoustic sensor device comprises a package, a substrate disposed in the package or forming a part of the package, and a plurality of microelectromechanical system (MEMS) transducers supported by the substrate and packaged in the package. The plurality of sound ports configured to couple the plurality of MEMS transducers to an ambient environment of the acoustic sensor device. The plurality of sound ports are arranged in the package such that respective MEMS transducers, among the plurality of MEMS transducers, exhibit different directional pick-up patterns with respect to sound waves traveling in the ambient environment of the acoustic sensor device.

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

Illustrative sensor controllers, sensors, sensing systems, and sensing methods, may enable cost-efficient implementation of ADAS (advanced driver-assistance system) features with hidden sensors. As one example, an illustrative sensing method includes: transmitting an acoustic burst through a surface over an ultrasonic transducer; receiving an acoustic signal with a MEMS (micro-electromechanical systems) microphone, the MEMS microphone representing the acoustic signal as an electrical receive signal; and processing the electrical receive signal to detect a reflection of the acoustic burst.

A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

A microelectromechanical system (MEMS) accelerometer incorporates deformation sensing with a plurality of sense electrodes positioned to facilitate determining a deformation pattern (e.g., asymmetric or symmetric) of an underlying substrate layer relative to a MEMS layer. The deformation pattern of the substrate layer contributes to offset and / or sensitivity of the accelerometer, so the determination of the deformation pattern enables processing circuitry to compensate and improve offset and / or sensitivity stability. Tilt sense electrodes and / or comparison electrodes may be incorporated alongside the plurality of sense electrodes to monitor deformation of the substrate layer relative to a fixed portion of the MEMS layer.

The present disclosure, in some embodiments, relates to a MEMS (Microelectromechanical systems) structure. The MEMS structure includes a first comb structure having a first plurality of comb fingers extending outward from a first branch. A second comb structure has a second plurality of comb fingers extending outward from a second branch. The first plurality of comb fingers are laterally interleaved between the second plurality of comb fingers. The first plurality of comb fingers respectively include a weighted core material and one or more peripheral materials. The weighted core material has a larger density than the one or more peripheral materials.