3415results about "Microelectromechanical systems" patented technology

A Light Detection and Ranging (LiDAR) system, comprising: a light emitting unit comprising a light source comprising one or more laser emitters for generating one or more laser beams for producing reflected photons off of a target; a scanning unit comprising a Micro-Electro-Mechanical Systems (MEMS) mirror for changing an outgoing direction of the one or more laser beams; a light receiving unit comprising a MEMS mirror array and a plurality of photon detectors, the MEMS mirror array being configured to deflect the reflected photons to the plurality of photon detectors; and a control system for controlling the LiDAR system, the control system being configured to adjust the MEMS mirror and the MEMS mirror array.

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

The invention discloses an MEMS thermal flow sensor based on a glass film structure and a preparation method of the MEMS thermal flow sensor. The sensor comprises a glass inner silicon substrate, a back cavity, a silicon through column, a heating resistor, a temperature measurement resistor, an environment temperature measurement resistor, a chromium adhesion layer, a PAD port and a silicon nitride protection layer. Wherein the heating resistor is located in the center, and the temperature measuring resistors are symmetrically distributed on two sides of the heating resistor; the back cavity is located on the back of the glass inner silicon substrate, and the heating resistor, the temperature measuring resistor and the environment temperature measuring resistor lead a PAD port to the back of the glass inner silicon substrate through a silicon through column. A thermal temperature difference principle is adopted, and upstream and downstream temperature measuring resistors form a Wheatstone bridge. When the flow velocity is not zero, the Wheatstone bridge outputs, and the larger the flow velocity is, the larger the output is. Based on the glass and silicon composite substrate, the suspension film structure is formed through the silicon etching process, transmission of heat to the substrate is greatly reduced, and the heat utilization rate is increased.

The invention provides a preparation method of an island and beam film structure micro differential pressure sensor with an IC (Integrated Circuit), which comprises the following steps: arranging an N-type buried layer, a P-type buried layer and an island film structure on an SOI (Silicon On Insulator) silicon wafer, then connecting the SOI silicon wafer with a double-parabolic silicon wafer, and arranging a medium isolation groove, an N-type buried layer connecting region, a P well, a P-type buried layer connecting region, a sensitive resistor, a P-type base region, an N-type base region, an N-type emitter region and a P-type emitter region on the SOI silicon wafer. According to the invention, the preparation of the complementary bipolar transistor double-buried layer is completed by combining a semiconductor manufacturing technology and an MEMS manufacturing technology under the condition of not using an epitaxial process; the process flow is integrally simplified, and the preparation efficiency is improved.

The invention relates to a hidden ultrasonic sensing system suitable for advanced driver assistance. Exemplary sensor controllers, sensors, sensing systems, and sensing methods that can enable cost-effective implementation of ADAS (Advanced Driver Assistance System) features with hidden sensors. As one example, an exemplary sensing method includes emitting a train of acoustic pulses through a surface on an ultrasonic transducer; receiving the acoustic signal with a MEMS (Micro Electro Mechanical System) microphone, the MEMS microphone representing the acoustic signal as an electrically received signal; and processing the electrical receive signal to detect reflections of the acoustic pulse train.

The present disclosure relates to a MEMS inertial sensor device in a semiconductor chip package that includes an integrated circuit configured to process inertial sensor data. Preferred implementations utilize inertial sensors having different sensitivity ranges to adjust operation of dynamic system control such as motion and or attitude control of autonomous vehicles.

The invention belongs to the field of MEMS sensors, and particularly relates to a low-temperature-drift MEMS resonant pressure sensor sensitive chip and a preparation method thereof. Comprising a cap layer, a resonance layer, a pressure sensing layer and an isolation base which are sequentially bonded and connected from top to bottom, the cap layer is provided with an electrode through hole and a vacuum cavity groove, and a getter is sputtered in the vacuum cavity groove; two Si-SiO2 composite resonators and a plurality of lead wire discs are arranged on the resonance layer, and a metal electrode is arranged on each lead wire disc; the number of the metal electrodes is equal to that of the cap layer electrode through holes, and the metal electrodes are located under the electrode through holes; two groups of silicon islands are arranged on the front surface of the pressure sensing layer, and three rectangular sensitive films with the same size are arranged on the back surface; the isolation base is a glass table; according to the invention, the output sensitivity of the sensor is greatly improved, the chip processing complexity is reduced, and the introduction of additional stress and materials is reduced.

A MEMS sensor and a preparation method therefor. The method comprises: forming a first oxide layer on a substrate wafer, performing patterned etching on the first oxide layer, and performing deposition and doping on the first oxide layer that has undergone the patterned etching, so as to form a first polycrystalline silicon layer; performing patterned etching on the first polycrystalline silicon layer to form a wiring, and depositing a second oxide layer on the first polycrystalline silicon layer; upon performing patterned etching on the second oxide layer, performing deposition and doping to form a second polycrystalline silicon layer; performing patterned etching on the second polycrystalline silicon layer to form bonding anchor points and a capacitive plate having a lower height than the bonding anchor points; bonding a device wafer with the bonding anchor points, and performing patterned etching on the device wafer to generate a movable structure, so as to obtain a device layer; and bonding the side of the device wafer distant from the substrate wafer with a cover layer.

The invention relates to a MEMS sensor (100) comprising: a substrate (40) having a main plane of extension; a vibration mass (60) which is movably suspended in the z-direction (1000) relative to the substrate (40); and a sensor device (90) for detecting a measurement signal dependent on the position of the vibration mass (60). The at least two resonators (10, 11, 12) are suspended in an elastically movable manner relative to the substrate in the z-direction (1000). The actuatable electrode arrangement (30) is designed to resonate each of the at least two resonators (10, 11, 12) in order to generate a mechanical resonant vibration and to capacitively detect an interference variable dependent on at least one resonant frequency of the resonant vibration. The invention also relates to a method for compensating for systematic measurement deviations of a MEMS sensor (100).

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

A cooling system is described. The cooling system includes a cooling element and a support structure. The cooling element is configured to undergo vibrational motion when actuated to drive a fluid toward a heat-generating structure. The cooling element includes a piezoelectric structure including a substrate having a first side and a second side opposite to the first side. A first piezoelectric layer is on the first side. A second piezoelectric layer is on the second side. The support structure is coupled to the cooling element and configured to support the cooling element.

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

Illustrative sensor controllers, sensors, sensing systems, and sensing methods, may enable cost-efficient implementation of ADAS (advanced driver-assistance system) features with hidden sensors. As one example, an illustrative sensing method includes: transmitting an acoustic burst through a surface over an ultrasonic transducer; receiving an acoustic signal with a MEMS (micro-electromechanical systems) microphone, the MEMS microphone representing the acoustic signal as an electrical receive signal; and processing the electrical receive signal to detect a reflection of the acoustic burst.

The present disclosure, in some embodiments, relates to a MEMS (Microelectromechanical systems) structure. The MEMS structure includes a first comb structure having a first plurality of comb fingers extending outward from a first branch. A second comb structure has a second plurality of comb fingers extending outward from a second branch. The first plurality of comb fingers are laterally interleaved between the second plurality of comb fingers. The first plurality of comb fingers respectively include a weighted core material and one or more peripheral materials. The weighted core material has a larger density than the one or more peripheral materials.

The present invention features a micrometer-scale torsion balance device comprising a rigid mass and two or more nanoribbons attached to the rigid mass. The rigid mass may be suspended by the two or more nanoribbons. The two or more nanoribbons may be placed under tensile stress. A local acceleration value may be derived from a torsional stiffness of the two or more nanoribbons. In some embodiments, the rigid mass may comprise silicon. In some embodiments, the two or more nanoribbons may comprise silicon nitride. In some embodiments, the rigid mass may have a polygon shape, the polygon shape having four or more sides. A side of the four or more sides may be longer than all others.

Disclosed are a micro-electromechanical system (MEMS) structure and an MEMS microphone comprising same. The MEMS structure comprises a back plate; and a diaphragm located on one side of the back plate, wherein the diaphragm and the back plate forms a variable capacitor, the diaphragm comprises multiple first through holes and air release structures respectively corresponding to the first through holes, and the diaphragm further comprises one or more second through holes penetrating through the diaphragm.

A probe including a shell, an ultrasonic transducer unit, and at least one circuit board is provided. The ultrasonic transducer unit is disposed in the shell and includes a substrate, a vibrating membrane, and an anti-resonance structure. The vibrating membrane is disposed on the substrate and forms a cavity with the substrate. The anti-resonance structure is disposed on one side of the substrate facing away from the vibrating membrane and includes a hard layer and a glue layer connected to each other. The density of the glue layer is different from the density of the hard layer. The at least one circuit board is electrically coupled to the ultrasonic transducer unit. A method of fabricating the ultrasonic transducer unit is also provided.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

A piezoelectric mirror component including a mirror element, a piezoelectric drive ring which surrounds the mirror element and is connected to the mirror element by way of at least one first torsion spring element, and a frame element connected to the drive ring via at least one second torsion spring element is specified, wherein the drive ring has a first diameter in a first direction and a second diameter in a second direction perpendicular to the first direction, and the first diameter is greater than the second diameter. A method for operating the piezoelectric mirror component and a projection apparatus are also specified.

A bi-directional photoacoustic gas sensor includes a first photoacoustic cell, where an electromagnetic radiation source emits radiation to interact with an external gas and generate pressure waves that are detected by a MEMS diaphragm. A second photoacoustic cell has an interior volume and acoustic compliance that corresponds to the interior volume and acoustic compliance of the first photoacoustic cell. Processing circuitry within a substrate uses a first acoustic signal, received by the first photoacoustic cell, and a second acoustic signal, received by the second photoacoustic cell, to determine a bi-directional response of the gas sensor to remove noise and improve the sensor's signal-to-noise ratio.

The MEMS triaxial accelerometer with the self-checking function comprises a cap layer, a structural layer and a substrate layer, the structural layer is clamped and packaged between the cap layer and the substrate layer, the structural layer comprises an X-axis acceleration detection array, a Z-axis acceleration detection array and a Y-axis acceleration detection array which have the self-checking function, and the X-axis acceleration detection array, the Z-axis acceleration detection array and the Y-axis acceleration detection array have the self-checking function. A Z-axis sensitive structure release groove is formed in the middle of the structural layer, the Z-axis acceleration detection array can move in the Z-axis direction along the Z-axis sensitive structure release groove, an X-axis sensitive structure release groove is formed in one side of the Z-axis acceleration detection array, and the X-axis acceleration detection array can move in the X-axis direction along the X-axis sensitive structure release groove. A Y-axis sensitive structure release groove is formed in the other side of the Z-axis acceleration detection array, and the Y-axis acceleration detection array can move in the Y-axis direction along the Y-axis sensitive structure release groove. The accelerometer provided by the invention has a self-checking function, can apply known signals, and is used for detecting the response of the sensor under different working conditions.

The invention relates to a method for the temporary fixing of micro-electro-mechanically movable elements (100), in particular those that can be used in equipment for semiconductor technology. In the method for temporarily fixing an element (100) that is micro-electro-mechanically movable relative to a basic structure (101) in at least one degree of freedom by at least one actuator (102), the fixing is carried out by filling at least one cavity (103) provided for the movement of the element, wherein - the material (202) intended for filling the at least one cavity (103) is introduced into the at least one cavity (103) in gaseous form in such a way that the material (202) is adsorbed and fills the at least one cavity (103) in layers, and - wherein at least one surface (200) of the movable element (100) to be kept free of the material (202) intended for filling is heated to a temperature above the sublimation temperature of the material (202) in order to prevent adsorption of the material (202) on the at least one surface (200) to be kept free. The invention also relates to a micro-electro-mechanically movable element (100) which is or was fixed by a method according to the invention.

A micro-electrical-mechanical-system (MEMS) switching device including a first MEMS switch having a first and second terminal, and a second MEMS switch having a third and fourth terminal. The device also includes first and second input conductors, and first and second output conductors. The first input conductor electrically connects the second terminal to the third terminal. The second input conductor electrically connects an input port to the first input conductor. The first output conductor electrically connects a first output port to the first terminal. The second output conductor electrically connects a second output port to the fourth terminal. A first path from the input port to the first output port, and a second path from the input port to the second output port, have substantially identical electrical characteristics.

The invention provides an MEMS (Micro Electro Mechanical System) micromirror array chip, a module and optical scanning equipment. The MEMS micromirror array chip comprises a plurality of micromirror structures, a substrate, a vertical lead structure and a capacitance angle sensing structure, according to the micro-mirror array chip integrated with the capacitive sensor, array-level real-time angle detection, feedback control and high-precision scanning angle detection are realized, and the micro-mirror array chip is fast in driving and resistant to interference; meanwhile, the wiring density is reduced by frequency division multiplexing isolation signals; in addition, the application of a monolithic integrated capacitance angle sensor in a high-density micro-mirror array chip is realized by a thick substrate with a silicon through hole; and finally, the micromirror array chip of the monolithic integrated capacitance angle sensor is used for precision optical scanning equipment, a photoelectric angle detector is omitted, optical scanning high-precision real-time angle detection and feedback control, high-precision angle detection and high-speed scanning are realized, the use design is convenient, and the cost is low.

The invention provides an MEMS pressure sensor, a preparation method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, sequentially forming a first pressure sensing film layer, a first sacrificial layer and a first sub-electrode layer on the first substrate, and sequentially forming a second pressure sensing film layer, a second sacrificial layer and a second supporting layer on the second substrate; respectively etching the first sub-electrode layer and the second supporting layer to form a plurality of first release holes and a plurality of second release holes; removing part of the first sacrificial layer to form a first cavity, and removing part of the second sacrificial layer to form a second cavity; the first sub-electrode layer and the second supporting layer are bonded, and the first release holes and the second release holes are arranged in a staggered mode; and etching the first substrate to form a back cavity, and removing the second substrate to expose the second pressure sensing film layer. According to the scheme, the first sub-electrode layer and the second supporting layer are bonded to form the MEMS pressure sensor with the double pressure sensing film layers, and the sensitivity and the linearity are improved.

A sensing structure and a method of fabricating a sensing structure for a compressive-type pressure sensor. The method comprises the steps of providing an elastic micropatterned substrate defining a plurality of 3-dimensional microstructures, each microstructure comprising a tip portion pointing away from the substrate in a first direction; forming a conductive film on the elastic micropatterned substrate such that the 3-dimensional microstructures are substantially covered by the conductive film; and forming cracks in the conductive film in areas on 3-dimensional microstructures.

A piezoelectric microelectromechanical system microphone comprises a support substrate, a piezoelectric element configured to deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric element, the piezoelectric element attached to the support substrate about a portion of a perimeter of the piezoelectric element, a sensing electrode disposed on the piezoelectric element and configured to sense the electrical potential, and slits defined in the piezoelectric element about the perimeter of the piezoelectric element, the slits defining a plurality of partial anchors securing the piezoelectric element to the support substrate to improve sensitivity of the piezoelectric microelectromechanical system microphone.

A method of fabricating nanostructured silicon on a substrate comprises a step of conducting a catalytic chemical vapor deposition using a Si-containing precursor and a carrier gas to generate on the substrate a silicon layer comprising columnar polycrystalline silicon structures and amorphous silicon containing material therebetween. The method further comprises conducting an anisotropic etching process of the silicon layer to remove the silicon between the polycrystalline silicon columns in order to fabricate the nanostructured silicon on the substrate.

The invention is applicable to the technical field of semiconductor devices, and provides a surface-mounted IMU (inertial measurement unit) and a preparation method thereof, and the surface-mounted IMU comprises a PCBA (printed circuit board assembly), a ceramic adapter plate, an MEMS (micro-electromechanical system) inertial chip and a Teflon cover plate; a groove is formed in the ceramic adapter plate; the size of the groove is suitable for the MEMS inertial chip; the bottom bonding pad of the ceramic adapter plate is connected with the top bonding pad of the ceramic adapter plate through a half hole; the MEMS inertial chip is arranged in the groove and is bonded with the ceramic adapter plate through an insulating gold wire; the ceramic adapter plate is welded on the assembly surface of the PCBA; the Teflon cover plate and the PCBA form a cavity, and the ceramic adapter plate and the MEMS inertial chip are placed in the cavity. The requirements of small size, high precision and low power consumption can be met at the same time, the burden of a vehicle-mounted power supply is relieved, and the requirement for the integration level of the whole vehicle is improved.

A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.