5results about How to "Increase etch rate" patented technology

The present invention discloses an anti-reflective coating composition, its preparation method and application, wherein the anti-reflective coating composition comprises a polymer having at least one structural unit represented by formula (1).

The present disclosure provides an etching solution, a GaN material etching method and a gallium nitride transistor manufacturing method, and belongs to the technical field of semiconductors. The etching solution comprises a tetramethylammonium hydroxide solution and an oxidizing agent, the concentration of the tetramethylammonium hydroxide solution is 0.1-2.0 mol / L, and the concentration of the oxidizing agent is 0.01-0.5 mol / L. The present disclosure can improve the etching effect of GaN materials.

The present invention provides a patterning method and a method for forming a fin structure. The patterning method includes: providing a substrate, wherein a barrier layer and a core pattern are sequentially formed on the substrate from bottom to top; forming a first sidewall material layer; performing an ion implantation process; performing an etching process to form the first sidewall, wherein the etching rate of the ion-implanted first sidewall material layer is greater than the etching rate of the un-ion-implanted first sidewall material layer; removing the core pattern; forming a second sidewall material layer; performing an ion implantation process; performing an etching process to form the second sidewall; and removing the first sidewall. The present invention, by ion implanting the first and second sidewall material layers on the top walls of the barrier layer and the core pattern to increase the etching rate of the ion-implanted portion relative to the un-ion-implanted portion, helps to eliminate the thickness difference between the barrier layers on both sides of the first sidewall and the barrier layers on both sides of the second sidewall, thereby forming a mask pattern with a better morphology.

The application discloses a semiconductor process equipment, including a semiconductor chamber, an electromagnetic coil, a support component and an insulating capacitance adjusting piece, wherein: the semiconductor chamber has an inner cavity, the support component is arranged in the inner cavity, and the support component is used for supporting a wafer; the semiconductor chamber comprises a dielectric window, and the dielectric window is arranged opposite to the support component; the electromagnetic coil is arranged outside the semiconductor chamber and opposite to the dielectric window, and a containing space is formed between the electromagnetic coil and the dielectric window; and the insulating capacitance adjusting piece is movably arranged in the containing space and used for covering part of the dielectric window. The above scheme can solve the problem that part of the wafer cannot meet the processing requirements when the semiconductor process equipment processes the wafer.