12results about How to "Increase etch rate" patented technology

The invention relates to the technical field of etching solutions, and particularly discloses a quartz etching solution and an etching method thereof.The quartz etching solution is prepared from, by mass, 18%-23% of hydrofluoric acid, 10%-12% of ammonium bifluoride, 1.5% of additives and the balance water; wherein the additive contains a surfactant and a cationic polymer. According to the etching solution provided by the invention, the additive contains the surfactant and the cationic polymer, and the surfactant has interface activation and foam inhibition effects in a strong acid environment and can reduce local interface tension and promote bubble stripping, so that local roughening caused by bubble shielding is reduced; the cationic polymer is weakly adsorbed on an etching interface to form a thin film, so that nucleation and growth of by-products (such as (NH4) 2SiF6) on the interface are inhibited, and particle deposition is reduced; the etching solution is used for etching quartz materials, the surface roughness of quartz is remarkably reduced while the high etching rate is guaranteed, and Ra is smaller than or equal to 120 nm during 200-micron deep etching.

The invention relates to a high-selectivity metal etching solution and an etching method. In the invention, the high-selectivity etching solution for metal titanium nitride and tungsten is composed of sulfuric acid and high-selectivity hydrogen peroxide, and the high-selectivity hydrogen peroxide comprises hydrogen peroxide and an etching protective agent. In the process of etching tungsten and titanium nitride by the etching solution, a stable etching rate and a large selection ratio can be maintained. According to the method, the etching liquid is self-heated in a mode of controlling mixed heat release of sulfuric acid and hydrogen peroxide, so that the temperature of the etching liquid is increased to 100 DEG C or above in a short time, the heating energy consumption is reduced, the etching rate of the titanium nitride and tungsten film layer is increased, the etching selection ratio and the etching morphology are adjusted through the protective agent, the high etching selection ratio is kept, and the etching efficiency is improved. A big problem in the semiconductor manufacturing process is solved.

The present invention discloses an anti-reflective coating composition, its preparation method and application, wherein the anti-reflective coating composition comprises a polymer having at least one structural unit represented by formula (1).

The present disclosure provides an etching solution, a GaN material etching method and a gallium nitride transistor manufacturing method, and belongs to the technical field of semiconductors. The etching solution comprises a tetramethylammonium hydroxide solution and an oxidizing agent, the concentration of the tetramethylammonium hydroxide solution is 0.1-2.0 mol / L, and the concentration of the oxidizing agent is 0.01-0.5 mol / L. The present disclosure can improve the etching effect of GaN materials.

The invention provides a semiconductor device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and forming a gate material layer and a patterned hard mask layer on the substrate; the patterned hard mask layer is used as a mask, dry etching is carried out on the gate material layer, and the cross section width of the gate material layer is larger than the target cross section width; performing chemical oxidation to form a chemical oxidation layer on the side wall of the gate material layer, removing the chemical oxidation layer by wet etching, and repeating the chemical oxidation step and the wet etching step until a gate is formed; and removing the patterned hard mask layer. According to the method, dry etching is carried out on the gate material layer, the cross section width of the etched gate material layer is larger than the target cross section width, and then the chemical oxidation step and the wet etching step are repeated to remove part of the gate material layer so as to form the gate. Through the chemical oxidation step and the wet etching step, the cross section size of the grid can be accurately controlled, and grid size deviation caused by instability of a dry etching machine table is avoided.

The invention discloses a cyclic regeneration process for extracting copper from sodium persulfate micro-etching waste liquid and a regeneration system thereof. The regeneration process comprises the following steps: collecting the micro-etching waste liquid: pumping the micro-etching waste liquid after micro-etching in a micro-etching production line into a micro-etching waste liquid collecting tank; the micro-etching waste liquid in the micro-etching waste liquid collecting tank is pumped into copper extraction electrolysis equipment for copper extraction electrolysis, copper metal is extracted, and low-copper waste liquid is obtained; the low-copper waste liquid is pumped into regenerative electrolysis equipment for regenerative electrolysis, so that the concentration of sodium persulfate is increased, and regenerative micro-etching liquid is obtained; and recycling the micro-etching liquid: adding the regenerated micro-etching liquid into a micro-etching production line for continuous use. The process provided by the invention can realize cyclic regeneration of the waste micro-etching liquid under a sulfuric acid-sodium persulfate system, achieves resource reutilization and clean production, has high etching rate, and can still maintain good operation and etching rate in a low-acid environment.

The present invention provides a patterning method and a method for forming a fin structure. The patterning method includes: providing a substrate, wherein a barrier layer and a core pattern are sequentially formed on the substrate from bottom to top; forming a first sidewall material layer; performing an ion implantation process; performing an etching process to form the first sidewall, wherein the etching rate of the ion-implanted first sidewall material layer is greater than the etching rate of the un-ion-implanted first sidewall material layer; removing the core pattern; forming a second sidewall material layer; performing an ion implantation process; performing an etching process to form the second sidewall; and removing the first sidewall. The present invention, by ion implanting the first and second sidewall material layers on the top walls of the barrier layer and the core pattern to increase the etching rate of the ion-implanted portion relative to the un-ion-implanted portion, helps to eliminate the thickness difference between the barrier layers on both sides of the first sidewall and the barrier layers on both sides of the second sidewall, thereby forming a mask pattern with a better morphology.

The application discloses a semiconductor process equipment, including a semiconductor chamber, an electromagnetic coil, a support component and an insulating capacitance adjusting piece, wherein: the semiconductor chamber has an inner cavity, the support component is arranged in the inner cavity, and the support component is used for supporting a wafer; the semiconductor chamber comprises a dielectric window, and the dielectric window is arranged opposite to the support component; the electromagnetic coil is arranged outside the semiconductor chamber and opposite to the dielectric window, and a containing space is formed between the electromagnetic coil and the dielectric window; and the insulating capacitance adjusting piece is movably arranged in the containing space and used for covering part of the dielectric window. The above scheme can solve the problem that part of the wafer cannot meet the processing requirements when the semiconductor process equipment processes the wafer.

This invention relates to a method, electrode, and equipment for repairing a dry-etched upper electrode, specifically relating to the field of dry etching. The repair method includes sequentially performing plasma cleaning, anodizing, spraying, and plasma treatment on the dry-etched upper electrode to obtain a repaired upper electrode. The repair method provided by this invention cleans and activates the scrapped upper electrode using plasma, followed by direct anodizing and spraying. Plasma treatment after spraying enhances the corrosion resistance of the sprayed layer to prevent contamination and further improves etching efficiency, ensuring subsequent high-efficiency dry etching.

The application provides a selective etching solution for aluminum oxide and IGZO, which comprises 3-5% of lye, 1-2% of halogen salt, 1-3% of indium gallium zinc salt compound, 0.1-1.0% of anthraquinone compound, 10-20% of alcohol organic solvent, and the rest is deionized water in percentage by mass. The etching solution can ensure that the selectivity ratio of aluminum oxide and IGZO is greater than 1000, and the wafer after etching has good roughness.

The invention discloses a method for forming a SiN deep hole structure, which comprises the following steps: a substrate is placed in a vacuum reaction cavity, and the substrate comprises a substrate and a SiN dielectric layer arranged on the substrate; etching gas is introduced into the vacuum reaction cavity, wherein the etching gas at least comprises CxHyFz gas and oxygen-containing gas; wherein x is larger than or equal to 0 and smaller than 5, y is larger than or equal to 0, z is larger than or equal to 0, y and z are not 0 at the same time, and at least one etching gas with y larger than 0 is included; applying source radio frequency power, and dissociating the etching gas to form etching gas plasma; and applying bias radio frequency power: alternately applying first bias radio frequency power and second bias radio frequency power, and etching the SiN dielectric layer of the substrate to form a SiN deep hole structure, the first bias radio frequency power is greater than the second bias radio frequency power. According to the method, bias radio frequency power and specific etching gas are applied in a high-low power switching mode to etch the SiN dielectric layer, and the deep hole structure with the vertical side wall contour can be rapidly obtained.