51results about How to "Increase etch rate" patented technology

The invention discloses a method for improving the micro LED mesa morphology by using multilayer masks and segmented etching, and belongs to the technical field of semiconductor processing technologies. The method comprises the following steps: firstly, depositing a SiO2 mask layer on the surface of an epitaxial layer, and then obtaining a photoresist through hole structure through spin coating, exposure and development; then, a chromium metal film layer is deposited and then lifted away from the photoresist, and a patterned chromium metal film layer is prepared; taking the patterned chromium metal film layer as a mask, and etching to prepare a patterned SiO2 mask layer; etching the patterned chromium metal film layer and the upper region of the epitaxial layer by using an etching gas with a high Cl2 / BCl3 flow ratio, and etching the patterned SiO2 mask layer and the lower region of the epitaxial layer by using an etching gas with a low Cl2 / BCl3 flow ratio; by adjusting the time of the two etching processes and the flow parameters of the etching gas, the time point when the chromium metal film layer is consumed can be controlled, and the effects of controlling the up-down diameter of the table top and controlling the etching angle are achieved.

The embodiment of the invention provides a manufacturing method of a glass through hole, which is used for solving the technical problem that a glass through hole with an ultrahigh depth-diameter ratio cannot be manufactured according to a pre-designed scheme in an existing manufacturing method of the glass through hole. According to the manufacturing method of the glass through hole, before laser-induced modification, exposed prefabricated through hole graphical areas are formed on the front face and the back face of a glass substrate through the micron-order photoresist mask technology, and meanwhile a photoresist layer with the thickness not smaller than 5 micrometers is formed on the surface, outside the prefabricated through hole graphical areas, of the glass substrate. In the laser-induced modification stage, laser with higher irradiation power can be used for deeply modifying the glass material in the prefabricated through hole patterned area to form a prefabricated through hole modified area. In the chemical etching stage, the surface of the glass substrate outside the prefabricated through hole modified area is covered with the anti-corrosion photoresist layer, and etching liquid only acts on the prefabricated through hole modified area, so that the phenomenon that the thickness of the glass substrate is reduced in the etching process is effectively prevented.

The invention discloses a deoxidation composition and a preparation method thereof, and relates to the technical field of deoxidation process, the deoxidation composition comprises 1-15% of inorganic acid, 1-5% of organic acid, 5-25% of peroxide, 0.1-3% of complexing agent, 0.01-5% of surfactant and 40-80% of water. According to the deoxidation composition provided by the invention, the complexing agent and the surface complexing agent are added, so that a deoxidation solution has a good etching rate, relatively high copper solubility, excellent copper surface roughness, excellent plating discoloration resistance and high working efficiency, and can be produced and used on a large scale.

The invention relates to a preparation method of an LDMOS device and the LDMOS device, and relates to the technical field of semiconductors, in the preparation method, a first etching machine table is adopted for a self-aligned polycrystalline silicon material layer, a second etching machine table is adopted for a shielding material layer, and special etching machine tables are adopted for different materials, so that the etching precision can be improved, and the manufacturing cost is reduced. Therefore, the material loss caused by incomplete etching of the material needing to be etched or over-etching during etching is avoided, and the yield of the product is improved. In addition, according to the formed LDMOS device, the metal silicide covering the shielding layer serves as a supplementary grid electrode of the grid electrode of the LDMOS device, so that the length of a conducting channel is increased, and the LDMOS device has better high voltage resistance.

In a method for generating a textured surface of a semiconductor layer, a surface of the semiconductor layer is etched with a first alkaline etching solution to generate a surface of the semiconductor layer having a pyramid-like texture. The surface having the pyramid-like texture is then etched with a second alkaline etching solution different from the first alkaline etching solution to remove material from the pyramid-like texture, thereby reducing a height difference between a peak and an adjacent valley of the pyramid-like texture. A method for manufacturing a tandem solar cell further comprises generating a first solar cell structure produced in this way having tandem solar cells with textured surfaces, and generating a second solar cell structure in series with solar cells on the side of the first solar cell structure on which the textured surface is arranged.

The invention discloses a diamond-based microwave attenuation material and a preparation method and application thereof. The method comprises the following steps: plating an anti-oxidation film on a CVD diamond growth surface by adopting a radio frequency magnetron sputtering method; the method comprises the following steps: placing a CVD diamond in a vacuum atmosphere furnace, continuously introducing a mixed gas of oxygen and argon, and carrying out multiple heating and cooling circulation oxidation processes in a temperature change range of 780-880 DEG C to realize grain boundary oxidation of a CVD diamond nucleation surface so as to obtain disordered micro grooves gradually expanded and grown from the CVD diamond nucleation surface to a growth surface; the oxidized CVD diamond is soaked in a glucose solution and then transferred into a vacuum atmosphere furnace to be carbonized, an anti-oxidation film is removed through a mechanical grinding method, and the diamond-based microwave body attenuation material is obtained. The diamond-based microwave body attenuation material prepared by the method can effectively solve the problems of poor body distribution of a graphite attenuation phase in a diamond medium phase, poor dielectric property consistency of the diamond-based microwave body attenuation material and the like in a traditional process.

The invention relates to a one-dosage type copper-molybdenum display etching solution and a preparation method and application thereof. The etching liquid comprises the following components in parts by weight: 5-15 parts of hydrogen peroxide; 10 to 15 parts of organic acid; 8-12 parts of an organic base; 0.008 to 0.07 part of a chelating agent; 0.002 to 0.07 part of a corrosion inhibitor; 0.04 to 0.3 part of a surfactant; 0.1 to 0.6 part of a hydrogen peroxide stabilizer; and 65-73 parts of ultrapure water. The chelating agent and the corrosion inhibitor in the etching solution are jointly adsorbed on the metal surface, the corrosion inhibitor and the chelating agent can form intermolecular hydrogen bonds to obtain a product with larger molecular volume, the product is adsorbed on the metal surface to generate a protective isolation layer, and meanwhile, the contained delocalized large pi bonds and nitrogen atoms can provide electron pairs for empty orbits of metal, so that the metal surface is protected. And coordination bonds are formed to be adsorbed on the metal surface to form a compact adsorption film, so that the corrosion of the metal is effectively inhibited, and the taper angle and the etching morphology of the etched metal are stabilized.

The present invention discloses a deep groove etching method for silicon, and relates to the field of semiconductor technology. The present invention comprises the following steps: S1: preheating; S2: adjusting external factors; S3: deposition; S4: etching; S5: sidewall improvement, and then forming a second protective layer on the sidewall of the etching interface by a second deposition gas, which adheres to the surface of the first protective layer; S6: performing S3, S4, and S5 in an alternating cycle until the etching reaches a predetermined depth, and in the alternating cycle process, the mixing amount of each component of the first deposition gas and the second deposition gas is dynamically adjusted with the change of the etching depth; S7: ending the etching. The method of the present invention can be applied to the etching of ultra-high aspect ratio groove structures. By decomposing an etching cycle into three sub-processes of deposition, etching, and sidewall improvement, double sidewall deposition can greatly improve the morphology of the sidewall, solving the problems of low processing efficiency and unsatisfactory sidewall morphology of the existing deep groove etching method.

A resist underlayer composition and a method of forming a pattern using the resist underlayer composition are disclosed. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. The definition of the chemical formula 1 is described in the specification. Chemical formula 1 # imgabs0 #

The invention discloses a copper foil etching solution as well as a preparation method, a use method and application thereof. According to the copper foil etching solution, in every 1L of water, the addition amount of copper sulfate pentahydrate is 100g to 200g, the addition amount of a substance containing ammonium ions is 200ml to 500ml, and the addition amount of ammonium fluoride is 50g to 80g. The copper foil etching solution provided by the invention has high etching rate and high etching quality, has wide application prospects in the electronic material processing fields of printed circuit board manufacturing, electronic component production and the like, and can effectively meet the requirements of the industry on an efficient and environment-friendly etching process.

The utility model provides a semiconductor process machine table and semiconductor process equipment, a temperature control structure is arranged in a bearing table, and the upper surface of the bearing table is a flush surface; a first temperature control pipeline in the temperature control structure is located in a first area, and a second temperature control pipeline is located in a second area surrounding the first area. The first temperature control pipeline and the second temperature control pipeline are the same in pipe diameter and different in distance from the upper surface of the bearing table. According to the utility model, the temperature control structure is partitioned to respectively control the temperatures of the center and the edge of the bearing table, so that the reaction rate of the wafer on the bearing table is uniform; meanwhile, by setting the positions of the partitions, the temperature adjustment better conforms to the reaction rate distribution, and the reaction uniformity is improved; in addition, the temperature of the bearing table is adjusted by setting the heights of the first area and the second area to be different, and the improvement method is simple and convenient to apply; finally, the temperature of the machine table is adjusted by setting different fluid flow rates of the temperature control pipeline, the form of the temperature control structure does not need to be changed, and the method is simple and convenient and facilitates popularization.

The present application discloses a method for realizing a recessed gate enhanced HEMT device by wet etching, which comprises: providing an epitaxial wafer for manufacturing a recessed gate enhanced HEMT device; setting a patterned etching mask on the epitaxial wafer, and exposing a selected area of ​​the surface of the epitaxial wafer from the etching mask; contacting the selected area of ​​the surface of the epitaxial wafer with a persulfate solution, and irradiating the selected area of ​​the surface of the epitaxial wafer with ultraviolet light, thereby etching a recessed structure in the barrier layer of the epitaxial wafer, and the recessed structure is used to cooperate with the gate. The present application avoids the problem of damage introduced by the dry etching process by performing low-damage wet etching on the area under the gate of the HEMT device. The process is simple and efficient, the etching is uniform, the repeatability is good, and there is no need to add a process for removing the etching product. The recessed gate threshold voltage of the obtained device is stable and the gate reliability is strong.

The invention relates to the technical field of semiconductors and electronic chemicals, and particularly discloses a THOX and TEOS selective etching solution and application, the etching solution comprises the following components by mass: 80-95% of monohydric alcohol, 0.1-1.5% of polyhydric alcohol, 0.02-0.5% of hydrofluoric acid, 0.01-0.2% of organic acid, and the balance of water. According to the invention, the polyol and the organic acid are introduced as additives, so that the etching rates of THOX and TEOS can be obviously reduced, the etching rate of THOX to TEOS can be overturned, and the etching selection ratio is greater than 5. The etching liquid is stable, the contained substances are cheap and easy to obtain, the production cost can be reduced, the substance result is simple, and raw materials which are high in purity and accord with semiconductor use can be obtained on the market.

The invention relates to the technical field of etching solutions, and particularly discloses a quartz etching solution and an etching method thereof.The quartz etching solution is prepared from, by mass, 18%-23% of hydrofluoric acid, 10%-12% of ammonium bifluoride, 1.5% of additives and the balance water; wherein the additive contains a surfactant and a cationic polymer. According to the etching solution provided by the invention, the additive contains the surfactant and the cationic polymer, and the surfactant has interface activation and foam inhibition effects in a strong acid environment and can reduce local interface tension and promote bubble stripping, so that local roughening caused by bubble shielding is reduced; the cationic polymer is weakly adsorbed on an etching interface to form a thin film, so that nucleation and growth of by-products (such as (NH4) 2SiF6) on the interface are inhibited, and particle deposition is reduced; the etching solution is used for etching quartz materials, the surface roughness of quartz is remarkably reduced while the high etching rate is guaranteed, and Ra is smaller than or equal to 120 nm during 200-micron deep etching.

The present invention belongs to the field of device processing and manufacturing. The present invention provides an ICP etching method for an ultra-thin metal layer and its application. The ICP etching method comprises first performing a first ICP etching to remove at least the ultra-thin metal layer outside the groove to form a removal area, then depositing a polymer layer in the removal area by ICP to protect the removal area, then performing a second ICP etching to remove the ultra-thin metal layer inside the groove, and finally removing the remaining polymer layer by ICP cleaning; the present invention adds a deposition step of a polymer layer, so that the polymer plays a protective effect outside the groove, so that the difference in etching rate between the metal outside and inside the groove is compensated, and the problem of poor etching rate uniformity caused by different depths is improved. The solution can be used on traditional ICP equipment, can bypass the use restrictions of ALE technology, has low requirements for equipment configuration, effectively saves costs and improves etching rate.

The present invention provides a method for improving a photoresist process window for etching back. The method comprises providing a substrate, forming an active area on the surface of the substrate, forming a plurality of first structures, a plurality of second structures and a thin film layer in the active area, wherein the first structure is higher than the second structure, and the first structure has an upper structure and a lower structure; forming a carbon filling material layer with a first thickness and covering the plurality of first structures, the plurality of second structures and the thin film layer on the substrate; performing a first etching to remove the carbon filling material layer, so that the remaining thickness on the top surface of the first structure is a second thickness; performing a second etching to etch the upper structure and expose the lower structure, wherein the carbon filling material layer with the second thickness prevents the thin film layer from being etched. The present invention can simultaneously realize nickel silicide protection and defect-free, and form a process window.

The present invention belongs to the field of integrated circuit electronic chemicals, and specifically relates to an etching solution for selectively etching an AlCu layer relative to a laminated metal and a preparation method thereof. The etching solution is mainly used for selectively etching an AlCu alloy layer relative to a laminated metal (composed of a photoresist, an AlCu alloy layer, a W layer, a TiN layer and a Ti layer from top to bottom), and its composition includes an oxidant, a corrosive agent, an additive, a complexing agent, a leveling agent and ultrapure water. The present invention provides an etching solution for selectively etching an AlCu layer relative to a laminated metal and a preparation method thereof. The use of the etching solution according to the method can not only effectively control the etching of the AlCu layer in the laminated metal while other metal layers are not etched, but also has high etching accuracy and good etching morphology, and has no damage to the electrochemical properties of the substrate.

The invention relates to a high-selectivity metal etching solution and an etching method. In the invention, the high-selectivity etching solution for metal titanium nitride and tungsten is composed of sulfuric acid and high-selectivity hydrogen peroxide, and the high-selectivity hydrogen peroxide comprises hydrogen peroxide and an etching protective agent. In the process of etching tungsten and titanium nitride by the etching solution, a stable etching rate and a large selection ratio can be maintained. According to the method, the etching liquid is self-heated in a mode of controlling mixed heat release of sulfuric acid and hydrogen peroxide, so that the temperature of the etching liquid is increased to 100 DEG C or above in a short time, the heating energy consumption is reduced, the etching rate of the titanium nitride and tungsten film layer is increased, the etching selection ratio and the etching morphology are adjusted through the protective agent, the high etching selection ratio is kept, and the etching efficiency is improved. A big problem in the semiconductor manufacturing process is solved.

The invention discloses a method for continuously etching a PTFE (Polytetrafluoroethylene) tube, and relates to the technical field of PTFE tubes. The method comprises four main steps of pre-cleaning, etching, multi-stage rinsing and drying. Firstly, oil stains and impurities on the surface of the PTFE pipe are removed through a cleaning device; then, the pipe is continuously conveyed into an etching tank containing a sodium naphthalene etching agent (containing an etching synergist) for etching, and the etching depth is adjusted by controlling the passing speed and the concentration of the etching solution; after etching, the pipe enters a multi-stage rinsing tank, and residual etching liquid is efficiently removed by utilizing reverse water flow. And finally, moisture is thoroughly removed through a hot air drying device, so that the surface of the PTFE pipe achieves uniform roughness, and preparation is made for subsequent treatment procedures.

The invention provides a method for processing a circuit board with a large back cavity, and the method employs a novel etching solution, and the etching solution comprises the following components: 20-30 mL / L of sulfuric acid, 5-10 g / L of a regulating agent, 40-50 mL / L of hydrogen peroxide, 2-4 g / L of a surfactant, 15-20 g / L of ethylene glycol, 40-50 g / L of a copper ion complexing agent, 6-8 g / L of a copper surface corrosion inhibitor, 1-3 g / L of a stabilizer, and 1-3 g / L of n-butylamine. By using the etching solution provided by the invention, the etching uniformity and stability of the circuit board can be improved, and a stable etching effect can be realized at different temperatures.

The invention discloses a high-selectivity etching solution for a radio frequency chip material. The etching solution comprises 15 # imgabs0 # alkaline substance with the mass content of 20%; 0.1 # imgabs1 # an oxidant with a mass content of 0.25%; 0.1 # imgabs2 #, and a corrosion inhibitor with the mass content of 0.2%; the mass content of the stabilizer is 0.05%, and the mass content of the stabilizer is 0.01 # imgabs3 #; and the balance of deionized water. According to the etching solution for the high-selectivity radio frequency chip material, high-selectivity etching of scandium-doped aluminum nitride and metal tungsten in the chip material can be realized, and etching of the metal tungsten is avoided to the greatest extent while complete etching of the scandium-doped aluminum nitride is ensured; and the number of damages caused by the etching liquid to the tungsten layer can be greatly reduced by adding the stabilizer.

The invention discloses a cantilever beam structure containing a piezoelectric single crystal film, a laser modification auxiliary preparation method of the cantilever beam structure and an MEMS device, and belongs to the technical field of MEMS. Laser modification and a wet etching process are combined to accurately and quickly etch a single crystal lithium niobate or lithium tantalate substrate sheet to obtain a cantilever beam structure containing a piezoelectric single crystal film, a cavity is formed in an internal area of the substrate sheet, the piezoelectric single crystal film is arranged on the surface layer of one surface of the substrate sheet relatively close to the cavity and covers the cavity, and the piezoelectric single crystal film is arranged on the surface layer of the other surface of the substrate sheet. At least one micropore is formed in the position, opposite to the edge of the cavity, of the edge of the piezoelectric single crystal film, and the cavity is communicated with the outside of the base piece through the micropore. According to the invention, the single crystal lithium niobate or lithium tantalate film and the cantilever beam structure are prepared at the same time and are used in the MEMS device, and the same material structure design of the cavity layer and the piezoelectric single crystal film layer can effectively solve the problems of stress matching and compensation of the cavity layer and the piezoelectric single crystal film layer; and the problem that the performance of the device is reduced due to internal lattice mismatch caused by a traditional piezoelectric single crystal film deposition method is solved.

The present invention relates to a plasma chamber provided with a side gas feeder that forms a vortex motion, the plasma chamber comprising: a housing provided with a mounting part in which a wafer is mounted; and side gas feeders that are provided on a side surface of the housing and that inject gas into the housing, the housing being provided with a plurality of side gas feeders, the side gas feeders including nozzles having nozzle holes through which gas is injected, and the side gas feeders injecting gas toward a wall surface of the housing.

The present invention discloses an anti-reflective coating composition, its preparation method and application, wherein the anti-reflective coating composition comprises a polymer having at least one structural unit represented by formula (1).

The present disclosure provides an etching solution, a GaN material etching method and a gallium nitride transistor manufacturing method, and belongs to the technical field of semiconductors. The etching solution comprises a tetramethylammonium hydroxide solution and an oxidizing agent, the concentration of the tetramethylammonium hydroxide solution is 0.1-2.0 mol / L, and the concentration of the oxidizing agent is 0.01-0.5 mol / L. The present disclosure can improve the etching effect of GaN materials.

The invention relates to a polycrystalline silicon etching solution, which is prepared from the following components in percentage by mass: 0.1 to 2.38 percent of quaternary ammonium salt compounds, 1 to 40 percent of alcohol amine compounds, 1 to 40 percent of polyhydric alcohol compounds, 0.1 to 2 percent of etching accelerant and the balance of deionized water. The sum of the parts by weight of the components is 100%. The alcohol amine compound and the polyhydric alcohol compound have a synergistic effect, so that the etching rate of SiO2 can be effectively reduced; the etching accelerator can improve the etching rate of the polycrystalline silicon, improve the etching uniformity and improve the surface roughness of the polycrystalline silicon.

The invention provides a semiconductor device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and forming a gate material layer and a patterned hard mask layer on the substrate; the patterned hard mask layer is used as a mask, dry etching is carried out on the gate material layer, and the cross section width of the gate material layer is larger than the target cross section width; performing chemical oxidation to form a chemical oxidation layer on the side wall of the gate material layer, removing the chemical oxidation layer by wet etching, and repeating the chemical oxidation step and the wet etching step until a gate is formed; and removing the patterned hard mask layer. According to the method, dry etching is carried out on the gate material layer, the cross section width of the etched gate material layer is larger than the target cross section width, and then the chemical oxidation step and the wet etching step are repeated to remove part of the gate material layer so as to form the gate. Through the chemical oxidation step and the wet etching step, the cross section size of the grid can be accurately controlled, and grid size deviation caused by instability of a dry etching machine table is avoided.

In the disclosed plasma processing apparatus, a control unit causes repetition of a cycle. The cycle includes the steps of: supplying a pulse of high-frequency power from a high-frequency power source to generate plasma from the gas in the chamber; and supplying an electrically biased pulse from a bias power source to the substrate support portion. The electrically biased pulse includes a DC voltage pulse periodically generated at a bias frequency of 1 MHz or less. The repetition frequency of the cycle is 5 kHz or more. The start timing of the electrically biased pulse is at the same time as or earlier than the stop timing of the source high-frequency power pulse. The stopping timing of the electrically biased pulse is later than the stopping timing of the high-frequency power source pulse.

The invention discloses a cyclic regeneration process for extracting copper from sodium persulfate micro-etching waste liquid and a regeneration system thereof. The regeneration process comprises the following steps: collecting the micro-etching waste liquid: pumping the micro-etching waste liquid after micro-etching in a micro-etching production line into a micro-etching waste liquid collecting tank; the micro-etching waste liquid in the micro-etching waste liquid collecting tank is pumped into copper extraction electrolysis equipment for copper extraction electrolysis, copper metal is extracted, and low-copper waste liquid is obtained; the low-copper waste liquid is pumped into regenerative electrolysis equipment for regenerative electrolysis, so that the concentration of sodium persulfate is increased, and regenerative micro-etching liquid is obtained; and recycling the micro-etching liquid: adding the regenerated micro-etching liquid into a micro-etching production line for continuous use. The process provided by the invention can realize cyclic regeneration of the waste micro-etching liquid under a sulfuric acid-sodium persulfate system, achieves resource reutilization and clean production, has high etching rate, and can still maintain good operation and etching rate in a low-acid environment.