336 results about "Power modulation" patented technology

An electrosurgical ablation device provides pulse width modulated DC power to a heating segment in a catheter for use in providing treatment. In some embodiments the DC power to be modulated is sourced from an AC / DC power converter coupled to a source of AC power. In some embodiments the DC power to be modulated is sourced from a battery. In some embodiments the device switchably selects for modulation DC power sourced from either the AC / DC power converter or the battery, for example based on availability of power from the AC / DC power converter.

An integrated, on-chip thermal management system providing closed-loop temperature control of an IC device and methods of performing thermal management of an IC device. The thermal management system comprises a temperature detection element, a power modulation element, a control element, and a visibility element. The temperature detection element includes a temperature sensor for detecting die temperature. The power modulation element may reduce the power consumption of an IC device by directly lowering the power consumption of the IC device, by limiting the speed at which the IC device executes instructions, by limiting the number of instructions executed by the IC device, or by a combination of these techniques. The control element allows for control over the behavior of the thermal management system, and the visibility element allows external devices to monitor the status of the thermal management system.

At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time of starting the process, the duty ratio of the high frequency power RF1 is gradually reduced from the initial value (about 90%) in a regular negative gradient or in a ramp waveform. At a time point t2 after a lapse of a preset time Td, the duty ratio has an originally set value Ds for an etching process. After the time point t2, the duty ratio is fixed or maintained at the set value Ds until the end (time point T4) of the process.

A method and system for determining a source flux modulation recipe for achieving a selected thickness profile of a film to be deposited (e.g., with highly uniform or highly accurate custom graded thickness) over a flat or curved substrate (such as concave or convex optics) by exposing the substrate to a vapor deposition source operated with time-varying flux distribution as a function of time. Preferably, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. Preferably, the method includes the steps of measuring the source flux distribution (using a test piece held stationary while exposed to the source with the source operated at each of a number of different applied power levels), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of source flux modulation recipes, and determining from the predicted film thickness profiles a source flux modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal source flux modulation recipe to achieve a desired thickness profile on a substrate. The method enables precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.