The invention discloses a synthesis and purification method of electronic grade
phosphorane, which relates to the technical field of
phosphorane synthesis, and has the advantages that impurities such as
metal oxides and carbides in a
silicon carbide ceramic substrate are removed by selecting the
silicon carbide ceramic substrate and performing high-temperature annealing treatment, so that the atomic arrangement of the substrate is more regular and ordered; compared with the prior art, the method has the advantages that the
gallium phosphide crystal structure is more complete, so that the
gallium phosphide crystal structure has higher
structural stability, meanwhile, after impurities are removed, the interaction between the substrate and reactants in a high-temperature reaction environment is more controllable, the
chemical stability is enhanced, a firm and reliable base is provided for growth of
gallium phosphide crystals, and by adopting the
ionic liquid 1-butyl-3-methylimidazolium
tetrafluoroborate, the yield of the
gallium phosphide crystal is increased. The production of
waste gas is reduced by utilizing the extremely low volatility of the
gallium phosphide, and meanwhile, the
reaction rate between
hydrogen phosphide and
hydrogen is accelerated by introducing
glucose oxidase for catalytic reaction, so that the
gallium phosphide crystal is promoted to efficiently and directionally grow on the
silicon carbide ceramic substrate, and the product quality and the production efficiency are improved.