The invention relates to the technical field of
semiconductor materials, in particular to a method for inducing
black phosphorus lines to preferentially grow by stacking substrates, which comprises the following steps: firstly, uniformly mixing red
phosphorus, metallic
tin and
iodine according to a certain proportion, and placing in a reactor; then, the
silicon /
silicon dioxide substrate coated with the
gold film is subjected to pre-annealing treatment, raw materials are isolated in a reactor through a
porous medium, and the annealed substrate is placed at the other end of the reactor; finally, placing the reactor in a heater for heating reaction, and naturally cooling to
room temperature after the reaction is finished; and taking out the substrate to obtain
black phosphorus in different forms. According to the method, chemical vapor transport is utilized, a
gold film is pretreated firstly, so that the
gold film is converted into dispersed
gold particles at high temperature, and
black phosphorus is induced to grow by taking nano-particles as a core. And through stacking of the
silicon wafers, space confinement growth is realized to control the number and length of the whole black
phosphorus wires, so that controllable preparation of black
phosphorus on the substrate is realized, the whole reaction is mild, the
reaction conditions are relatively low, and the cost is relatively low.