The invention relates to a preparation method for an orderly
silicon nanowire array. A porous
alumina template and
metal auxiliary
chemical corrosion are combined to obtain the orderly
silicon nanowire array. The preparation method for the orderly
silicon nanowire array comprises the following steps: sequentially depositing a SiO2 film and an aluminum (Al) film on a clean
silicon chip surface; then
anodizing the aluminum (Al) film to form porous aluminum
oxide (AAO);
etching on the silicon surface by means of
plasma with the AAO as the masking to copy a hole array graph of the AAO; removing AAO layer and SiO2 layer, depositing a
gold film on a graphical silicon surface, and obtaining a
gold layer of a mesh structure; enabling a sample of the
gold film which is covered with the mesh structure to be immersed into hydrofluoric (HF) acid and H2O2 corrosive liquid to corrode, and finally obtaining a silicon
nanowire array. The preparation method for the orderly silicon
nanowire array is easy, and a large-area orderly and vertically arranged silicon
nanowire array can be prepared; the facts that trends,
doping types and levels, diameters, lengths, separation distances, surface densities and the like of the nanowire array are effectively controlled can be achieved, and cost is low, and therefore the preparation method for the orderly silicon nanowire array can be used for a device based on a silicon nanowire array.