645 results about "Gold film" patented technology

A semiconductor wafer provided with columnar electrodes which have plated nickel, palladium, and gold films successively formed at the top thereof, or have a plated solder film at their top. The semiconductor wafer can be preferably used for producing a chip-sized semiconductor device provided with columnar electrodes to which an external connection terminal, such as a solder ball, is to be bonded. Methods of producing the semiconductor wafer and device by use of plating are also disclosed.

The invention provides a graphene/silicon carbide Schottky junction based photovoltaic cell and a preparation method thereof. The method comprises the following steps: placing a TiPdAg back electrode, an n-type monocrystalline silicon piece n-Si, an annular SiO2 layer and an annular gold film from bottom to top in a laminating mode, and forming stepped holes by an inner hole of the gold film, a through hole in the middle of the SiO2 layer and the upper surface of the n-type monocrystalline silicon piece n-Si; tiling the graphene or organic suspension of the graphene on the surface of the stepped holes by methods of directly transferring, spin coating, spraying, dipping and filtering, and leading the dried graphene film to be closely combined with the n-Si on a substrate electrode; and taking a lead wire extracted from one end of the graphene film as an anode of the photovoltaic cell, and taking a lead wire extracted from one end of the TiPdAg back electrode as a cathode of the photovoltaic cell. The photovoltaic cell reduces the utilization ratio of silicon, has simple assembly process and low cost, and is applicable to scale application.

Disclosed are nanostructured gold films which may be produced by solution-phase depositions of gold ions onto a variety of surfaces. The resulting plasmonic gold films are used for enhanced spectroscopic-based immunoassays in multiplexed microarray format with detection mechanisms based on either surface-enhanced Raman scattering or near-infrared fluorescence enhancement. The preparation of the films and subsequent modifications of the gold film surfaces afford increased sensitivity for various microarrays. The films are discontinuous, forming gold “islands.” Sensitivity, size, shape, and density of the nanoscopic gold islands comprising the discontinuous nanostructured gold film are controlled to enhance the intensity of Raman scattering and fluorescence in the near-infrared, allowing for improved measurements in clinical diagnostic or biomedical research applications.

A high power high temperature superconductive circuit for use in various microwave devices including filters, dielectric resonator filters, multiplexers, transmission lines, delay lines, hybrids and beam-forming networks has thin gold films deposited either on a substrate or on top of the high temperature superconductive film. Alternatively, other metal films can be used or a plurality of dielectric films can be used or a dielectric constant gradient substrate can be used. The use of these materials in a part or parts of a microwave circuit reduces the current density in those parts compared to the level of current density if only high temperature superconductive film is used. This increases the power handling capability of the circuit.

Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n⁺ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p⁺ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

The invention relates to a method for measuring a thickness of a metal film of a lithographic mask and belongs to the field of physical measurement. The method comprises the following steps of: placing a prism of which the bottom surface is evaporated with a gold film close to a metal chromium surface of the mask so as to form a double-sided metal waveguide structure to be measured; selecting a laser wavelength and a polarization mode of an incident angle; receiving and recording the light intensity of a laser beam reflected from the bottom of a coupled apparatus or the light intensity of a laser beam transmitted from a lower metal film; changing the laser incident angle to obtain a curve of the light intensity and the incident angle; finding a resonance angle of absorption peaks of a guided mode and a width and a depth of the corresponding absorption peak; and calculating to obtain a refractive index and a thickness value of a thin film material. According to the invention, the high accuracy measurement is realized. The method is easy for operation and miniaturization.

The invention discloses a method for preparing gold nanoparticles by annealing of a gold film. The method comprises the following steps: depositing a gold nano film (2) on a base material (1) by a magnetron sputtering method or vacuum evaporation method, wherein the vacuum degree of a magnetron sputtering chamber or a vacuum evaporation chamber is 10<-3>-10<-4>Pa, and the thickness of the deposited gold nano film (2) is 5-20nano; integrally arranging the deposited gold nano film (2) and the base material (1) in an annealing furnace to be heated for 30-120min, wherein the heating temperature is 350-600 DEG C; and cooling to the room temperature, and forming gold nanoparticles (3) on the base material (1). According to the invention, through controlling the thickness of the gold film, the annealing temperature, the annealing time and other parameters, the gold nanoparticles in different sizes and shapes can be obtained. The method disclosed by the invention has the advantages that the preparation is simple, the sizes and the shapes of the nanoparticles can be controlled, the preparation efficiency is high, and the like.

A method for flip chip package and structure thereof is disclosed. The present invention is using an eutectic bonding process to connect a chip and a heatsink for enhancing thermal dissipation capability from the chip to the heatsink and ensuring the chip working well. The method for flip chip package at least includes the steps of providing a heatsink having a surface plated with a gold film and a bare surface, providing a chip having a join surface and an active surface with a plurality of contacts, eutectic bonding the join surface of the chip to the gold film of the heatsink by gold-silicon diffusion for connecting the chip to the heatsink, connecting the active surface of the chip to a substrate by flip chip technology; and dispensing an underfill into the gap between the chip and the substrate.

The preparation method for transplantable ultrathin nano porous gold film comprises: preparing Au-Cu alloy with vacuum evaporation method, thermal annealing, and removing alloy with acidic solution. This product can be used in catalysis, bio-sense, porous electrode and other fields as well as nano grating and non-linear optics fields for special optical and high light transmission features

The invention relates to the field of electroplating technology, in particular to an electroplating process of a probe for an electric connector. The electroplating process comprises the following fabrication steps: A. conducting pre-processing on the probe so as to remove oil stain; B. conducting activating processing on the probe, and coating an oxidation film on the surface of the activated probe; C. plating a copper film plating layer on the surface of the probe; D. plating a gold film plating layer on the surface of the copper film plating layer; E. plating a ruthenium film plating layer on the surface of the gold film plating layer; and F. conducting post-processing on the surface of the ruthenium film plating layer, and carrying out surface hole sealing, rinsing and drying. The electroplating process is low in raw material cost, low in fabrication difficulty and low in production cost, and can meet the high requirement on appearance quality of the electric connector product.

The invention discloses low-temperature empaistic bright gold stained paper and a printing method of the low-temperature empaistic bright gold stained paper. The method comprises the following steps of making patterns, making films, making screen printing plates, drying backing paper, coating empaistic bright gold base coat, drying empaistic bright gold base coat, carrying out transfer printing of empaistic bright gold, drying empaistic bright gold films, coating a layer of cover glue film capable of being torn, and drying the cover glue film capable of being torn. According to the empaistic bright gold stained paper printed by using the method, the surfaces of the patterns protrudes over a plane like embossment, and a three-dimensional effect is obvious.

The invention discloses a silver-gold porous nanorod array, a preparation method and a purpose of the silver-gold porous nanorod array. The array comprises porous gold nanorods coated with 3-15nm silver films and arranged on a methyl methacrylate substrate coated with a gold film, wherein the nanorods are 150-250nm in length, and 50-70nm in diameter; and holes are 5-20nm in diameter. The method comprises the steps of placing an aluminum oxide template coated with a gold film in a mixed electrolytic solution for electro-deposition, obtaining an aluminum oxide template coated with the gold film and provided with a gold-silver alloy nanorod array deposited in holes, placing the aluminum oxide template in a nitric acid solution for reaction to obtain an aluminum oxide template coated with the gold film and provided with a porous gold nanorod array in holes, coating the other side of the gold film with liquid methyl methacrylate, solidifying, then sequentially placing the aluminum oxide template in a silver nitrate electrolytic solution for the electro-deposition and aqueous alkali for removing the aluminum oxide template, or sequentially placing the aluminum oxide template in aqueous alkali for removing the aluminum oxide template, coating a silver film by an ion sputtering method, and obtaining the objective product. The array can serve as an SERS (Surface Enhanced Raman Scattering) activity substrate for detecting trace organic matters.

The invention discloses a mercapto-beta-cyclodextrin modified silver nano-rod array, its preparation method and its use. The array is a silver nano-rod array with the surface modified by mercapto-beta-cyclodextrin, wherein the lengths of silver nano-rods are 150-600nm, the diameters of the silver nano-rods are 60-90nm, the space between each two silver nano-rods is 10-40nm, and the substrate of the array is formed by superposing one or more than two of a silver film, a gold film, a copper film and a nickel film which have the thicknesses of 20-50mum. The preparation method comprises the following steps: obtaining a through hole alumina template through using a secondary anode oxidation method, sputtering a metal conductive film on one surface of the through hole alumina template through using an ion sputtering method to obtain an alumina template with the metal conductive film, carrying out electric deposition through placing the alumina template with the metal conductive film in a silver electrolyte to obtain an alumina template with holes provided with the silver nano-rods and one surface coated with the metal conductive film, etching off the alumina template through putting the resultant alumina template in an acidic or strongly alkaline solution, and immersing the resultant material in an aqueous solution of the mercapto-beta-cyclodextrin for at least 1h to prepare the mercapto-beta-cyclodextrin modified silver nano-rod array. The mercapto-beta-cyclodextrin modified silver nano-rod array can be used for rapidly detecting trace PCB77 or PCB101.

The invention discloses a graphene field-effect transistor biosensor as well as a manufacturing method and a detecting method thereof. The graphene field-effect transistor biosensor comprises glass substrates, wherein the two sides of each glass substrate are respectively provided with an ITO (indium tin oxide); parts of glass substrates at the same side as well as the ITOs of the parts of glass substrates are covered with graphene; the ITOs at the two sides of each glass substrate without graphene are respectively a source electrode and a drain electrode; a PET (polyethylene glycol terephthalate) gasket is covered on each ITO covered with the graphene and is covered with a PET substrate on which a gold film is sputtered; a sample cell is arranged in the middle of each glass substrate by insulating silica gel; the gold film is taken as a grid electrode. The contact resistance is reduced by means of covering the ITOs with graphene, the plane gold film electrode is taken as the grid electrode to exert a uniform electric field and increase the action area of electrolyte and graphene, and by the two aspects, the detection sensitivity is improved and the detection range is enlarged; by detection, the lower limit of adenosine triphosphate reaches 10pM.

The invention relates to a cyanide-free chemical method for plating thick gold, particularly a double-tank method for continuously plating thick gold with cyanide-free chemical gold plating solutions. The method comprises the following steps: 1) immersing a substrate in a first cyanide-free chemical gold plating solution, and carrying out replacement gold plating to deposit a thin gold layer, wherein the thickness of the obtained gold film is 0.02-0.08 mu m; and 2) transferring the product obtained in the step 1) into a second cyanide-free chemical gold plating solution, and carrying out reduction-type chemical gold plating to deposit a thick gold layer, wherein the thickness of the obtained gold film is up to 0.3-2 mu m. The gold plating has the advantages of favorable binding force with the substrate, golden appearance and fine and compact crystals. The purity of the gold layer is 100%; and when the gold layer is subjected to welding, no black tray phenomenon is generated. The cyanide-free chemical gold plating solutions have the stability for practical application. The invention can solve the problem of thin gold layer in the replacement gold plating technique, and the problems of high pollution tendency, cyanide containing and the like in the plating solution in the reduction-type chemical gold plating technique.

The invention aims to provide a method for preparing surface plasma resonant imaging gold film micro-array. The method comprises the following steps: firstly self-assembling a gold size nanometer particle monolayer with the diameter of 2.5 nanometer on a glass plate modified by 3-Aminopropyltrimethoxysilane, taking the monolayer as a catalytic template; then taking a transparent film high-precision printed lattice array as a mask to carry out photo-etching to the glass plate modified by the gold nanometer particles, thereby preparing the micro-array of the gold nanometer particles; and controlling the gradual increase of the gold nanometer particle micro-array within the nanometer scale range by adopting the electroless plating technique, thereby constructing the required gold film micro-array. The size and the interval of each gold point in the micro-array can be conveniently controlled by the mask, and the thickness of the gold point is controlled by adjusting the electroless plating time.

The invention relates to a fiber sensor, particularly relates to a multifunctional sensor with microstructure fiber surface plasma resonance and a preparation method thereof. The two sides of the photonic crystal fiber substrate of the fiber are provided with fan-shaped openings that surface of which are plated with gold films. Tips of the bottom ends of the fan-shaped openings are provided with silver nanowires. The core of the photonic crystal fiber substrate is provided with a magnetic fluid, and the outer side of the core is provided with a cladding air hole. The preparation method comprises the steps of: polishing the fan-shaped openings on the photonic crystal fiber; filling the silver nanowires; uniformly plating the gold films on the surface of the fan-shaped openings; pressing themagnetic fluid into the photonic crystal fiber from a small tube; and coupling and splicing the two ends of the common single mode fiber and the photonic crystal fiber through the self-calibrating function of the a fiber fusion splicer. The sensor of the invention can achieve the analysis and detection of the external magnetic field intensity, the refractive index of the to-be-measured liquid andthe external temperature in one time, therefore, the technical defects that the conventional detection technology is complex in operation, low in detection sensitivity and non-real time online detection are overcome.

The invention discloses a preparation method of a silicon micro/nanometer line array with a controllable dimension. The preparation method is characterized in that a silicon chip is used as a substrate, a sample A is obtained through taking out the silicon chip to be dried after the surface of the silicon chip is cleaned, photoresist is coated on the surface of the sample A in a spiral way, and a photoresist layer is baked; a contact type mask is prepared according to the pattern types of the silicon micro/nanometer line array, the mask is utilized for realizing the exposure on the photoresist layer to obtain a sample B, the sample B is developed in developing liquid for 4 to 6 minutes, and exposed photoresist is washed away to obtain a sample C; a gold film with the thickness being 20 to 50 nanometers is coated on the surface of the sample C to obtain a sample D; the sample D is placed into acetone to remove the photoresist and the gold on the sample, and the silicon chip in contact with the gold, i.e. a sample E is obtained; and the sample E is soaked into etching liquid to carry out gold catalysis chemical etching, and the silicon micro/nanometer line array is obtained after the etching completion. The preparation method provided by the invention can be used for obtaining the silicon micro/nanometer line array with the controllable diameter and length and the uniform crystal orientation so that the silicon micro/nanometer line array can realize the practical application to devices.

An electrode for a semiconductor device includes a gold-containing thin film and a gold-containing plated film on the thin film. The plated film covers the entire thin film. No open surface is present between the thin gold film and the gold plating so no excessive current concentration occurs in any area.

The invention relates to a preparation method for an orderly silicon nanowire array. A porous alumina template and metal auxiliary chemical corrosion are combined to obtain the orderly silicon nanowire array. The preparation method for the orderly silicon nanowire array comprises the following steps: sequentially depositing a SiO2 film and an aluminum (Al) film on a clean silicon chip surface; then anodizing the aluminum (Al) film to form porous aluminum oxide (AAO); etching on the silicon surface by means of plasma with the AAO as the masking to copy a hole array graph of the AAO; removing AAO layer and SiO2 layer, depositing a gold film on a graphical silicon surface, and obtaining a gold layer of a mesh structure; enabling a sample of the gold film which is covered with the mesh structure to be immersed into hydrofluoric (HF) acid and H2O2 corrosive liquid to corrode, and finally obtaining a silicon nanowire array. The preparation method for the orderly silicon nanowire array is easy, and a large-area orderly and vertically arranged silicon nanowire array can be prepared; the facts that trends, doping types and levels, diameters, lengths, separation distances, surface densities and the like of the nanowire array are effectively controlled can be achieved, and cost is low, and therefore the preparation method for the orderly silicon nanowire array can be used for a device based on a silicon nanowire array.