Method (100) for fabricating a
power semiconductor device with a plurality of fins, comprising the steps of (110) producing a plurality of mesas from a front face of a
semiconductor substrate to a drift layer of the
semiconductor substrate by
etching, wherein each mesa has a top surface corresponding to a region of the front face of the
semiconductor substrate, and each mesa is arranged between a first trench and a second trench, wherein the first trench has a first trench bottom surface and the second trench has a second trench bottom surface, wherein each mesa has a first side surface and a second side surface, wherein the first side surface corresponds to a first trench side surface of the first trench and the second side surface corresponds to a second trench side surface of the second trench, wherein each mesa has a width greater than 500 nm, and (120) applying a
mask layer to the top surface.the first side face, the second side face, the first trench bottom surface and the second trench bottom surface, generating (130) a structured
mask by area-wise removal of the
mask layer so that an exposed surface is produced, wherein the exposed surface comprises the first side face, area-wise the top surface and the first trench bottom surface, generating (140) fins by
machining the exposed surface, removing (150) the structured mask, and completing (160) the
power semiconductor device.