Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

172 results about "Secondary growth" patented technology

In botany, secondary growth is the growth that results from cell division in the cambia or lateral meristems and that causes the stems and roots to thicken, while primary growth is growth that occurs as a result of cell division at the tips of stems and roots, causing them to elongate, and gives rise to primary tissue. Secondary growth occurs in most seed plants, but monocots usually lack secondary growth. If they do have secondary growth, it differs from the typical pattern of other seed plants.

Longitudinally-conductive GaN (gallium nitride) normally-closed MISFET (metal integrated semiconductor field effect transistor) device and manufacturing method thereof

The invention discloses a longitudinally-conductive GaN (gallium nitride) normally-closed MISFET (metal integrated semiconductor field effect transistor) device and a manufacturing method thereof. The device successively comprises a substrate (1), an n-type GaN layer (2), an electronic barrier layer (3), a non-doped GaN layer (4) and a heterostructure potential barrier layer (5) from bottom to top, wherein a groove is etched in the n-type GaN layer from the surface of the heterostructure potential barrier layer; a p-type GaN layer is formed on the groove by secondary growth so as to realize a grid conducting channel (7); two ends of the heterostructure potential barrier layer form source electrodes (9); an insulating layer (8) is covered on the grid conducting channel and the exposed surface of the heterostructure potential barrier layer; a grid electrode (11) is covered at a channel position on the insulating layer; and drain electrodes (10) are covered on the underside of the substrate. In the invention, a two-dimensional electron gas heterostructure with high concentration is taken as an access area, thus effectively reducing the on resistance; and the thin p-type GaN layer is formed in the etching groove by secondary growth, thus being easy to improve the threshold voltage and channel mobility of the longitudinally-conductive normally-closed MISFET.
Owner:SHANGHAI XINYUANJI SEMICON TECH

Preparation method of orientation LTL type molecular sieving membrane for gas separation

The invention relates to a preparation method of an orientation LTL type molecular sieving membrane for gas separation. The preparation method comprises the following steps: (1) mixing an alkali source, an aluminum source, a silicon source and deionized water to obtain gel and performing hydrothermal crystallization for preparing a seed crystal; (2) performing acidic treatment on the seed crystal prepared in the step (1) so as to remove aluminum from the grain surface, and then preparing a suspension in sec-butyl alcohol, and stirring for modifying; (3) dropwise adding the LTL type molecular sieving suspension acquired by modifying in the step (2) into an LB liquid tank for forming a membrane, and then transferring the acquired membrane onto the surface of a carrier; (4) mixing an alkali source, an aluminum source, a silicon source and deionized water to obtain a secondary growth synthetic solution; (5) contacting the product from the step (3) with the secondary growth synthetic solution from the step (4), performing hydrothermal crystallization and acquiring the LTL type molecular sieving membrane on the carrier. According to by the invention, the simple, controllable, efficient and repeatable LB method is adopted for preparing the orientation LTL type molecular sieve seed crystal layer and the high c-axis orientation LTL type molecular sieving membrane is prepared through secondary growth; the operation is simple, the degree of orientation is easily controlled, and the repeatability is high.
Owner:NINGXIA UNIVERSITY

Method for preparing fluorine-containing mordenite zeolite membrane

The invention provides a method for preparing high-performance fluorine-containing mordenite zeolite membrane. The method is characterized in that crystallization is performed for 5 to 30 hours at a synthesis temperature between 130 and 190 DEG C by a secondary growth method so as to form a layer of dense defect-free fluorine-containing mordenite zeolite membrane on the outer surface of a porous tubular supporting body; the molar ratios of synthesis materials are as follow: the molar ratio of SiO2 to Al2O3 is 10 to 60; the molar ratio of H2O to SiO2 is 15 to 60; the molar ratio of Na2O to SiO2 is 0.15 to 0.5; and the molar ratio of F- to SiO2 is 0.01 to 2. NaF, KF, AlF3, (NH4) SiF6 and NH4F and the like can be used as a fluoride source. The preparation method avoids adding expensive organic template agents, and the fluoride source added greatly improves the permeability and acid resistance of the membrane. For example, when the method is applied to permeation experiment on water/ethanol (10/90 percent by weight) system at 75 DEG C, the average water permeation flux J is 1.2 to 2.5 kg/m2 h; the separation factor (alpha) is more than 1,000; and the synthesized membrane still maintains good stability in acid solution with a pH of less than 1. The method has the advantages of simple novel process, good repeatability and suitability for industrial production.
Owner:JIANGXI NORMAL UNIV

Zeolite coating material with high intercrystalline porosity on the surface of porous silicon carbide support and its preparation

The invention which belongs to the technical field of structured catalysts and application technologies thereof concretely relates to a high intercrystal poriness zeolite coating material on the surface of a porous silicon carbide carrier and a preparation method thereof. The porous silicon carbide carrier involved by the material has a macroscopic porous structure, for example a foamy structure,and a honeycomb structure. The zeolite coating has a high intercrystal poriness. According to the preparation method, the surface of the porous silicon carbide carrier is modified by a colloidal zeolite guiding agent to realize the preferred growth of zeolite crystal on the surface of the porous silicon carbide carrier; and the alkalinity of a secondary growth solution, the concentration of nutrients, and the addition of alkali metal ions are controlled to control the intercrystal poriness of zeolite. The coating material has the advantages of high intercrystal poriness, small zeolite crystaldimension, good molecular diffusion ability, large zeolite load capacity, adjustable silica-alumina ratio of the zeolite crystal and zeolite coating thickness, and good binding ability of the zeolitecrystal with the surface of the porous silicon carbide carrier. The structured catalyst which is in favor of mass and heat transfer reinforcement has wide application prospects in fields of catalysis, adsorption, separation and the like.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Method for preparing highly-oriented MFI-type molecular sieve membrane by secondary growth process

The invention discloses a method for preparing a highly-oriented MFI-type molecular sieve membrane by a secondary growth process, which comprises the following steps: 1) preparation of a secondary growth synthesis liquid: mixing certain amounts of ethyl orthosilicate, tetrapropyl ammonium hydroxide and water, stirring at room temperature for 3-5 hours, adding an ammonium salt water solution with a certain concentration into the clear synthesis liquid, and continuing stirring for 1-3 hours to obtain the final synthesis liquid, wherein the synthesis liquid is composed of the following components in parts by mole: 1 part of ethyl orthosilicate, 0.1-0.4 part of tetrapropyl ammonium hydroxide, 100-500 parts of water and 0.075-0.3 part of water; 2) putting a carrier coated with a b-axis-oriented crystal seed layer into a high-pressure synthesis kettle, pouring the synthesis liquid, and sealing; crystallizing at 120-180 DEG C for 3-12 hours; and 3) cooling the synthesis kettle, taking out the carrier, washing and drying to obtain the oriented MFI-type molecular sieve membrane on the carrier. The ammonium salt added into the traditional synthesis liquid can effectively inhibit the twin crystal from generation in the secondary growth process. The method is simple to operate, and has the advantages of wide application range, no special requirements for the carrier and low preparation cost.
Owner:ZHEJIANG UNIV

Preparation method of fluorine-containing MFI zeolite membrane

The invention provides a preparation method of a fluorine-containing MFI zeolite membrane, which is characterized by comprising an ultra-thin synthetic liquid containing fluoride (MF), wherein the molar ratio is 1SiO2: 0.05-1.5MF: 0.05-0.5TPABr: 0.05-0.5TPAOH: 200-2000H2O, and a layer of continuous dense fluorine-containing MFI zeolite membrane is formed on the surface of a porous tubular supporting body coated with fluorine-containing MFI zeolite crystal seeds by using a secondary growth hydrothermal method. The pervaporation test is carried out for the prepared MFI zeolite membrane in an ethanol / water (5/95wt%) system at the temperature of 60 DEG , and the permeation flux and the separation factor can be respectively up to 2.85kg/m2. h and 68. The method has mild conditions of preparation process, and simple and fast operation step, and greatly reduces the contents of a silicon source and a template agent in the synthetic liquid, thereby greatly reducing the preparation cost of the membrane, and obviously improving the permeability of the MFI zeolite membrane; and the fluorine-containing MFI zeolite membrane has wide application prospects in the fields of the separation of liquid such as organic matter / water mixture, gas separation, membrane reactors and the like.
Owner:JIANGXI NORMAL UNIV

Method of preparing high-oriented MFI type zeolite membrane by virtue of secondary growth under neutral condition

The invention discloses a method of preparing a high-oriented MFI type zeolite membrane by virtue of secondary growth under the neutral condition. The method comprises the following steps: 1) preparing a neutral synthetic fluid, wherein the synthetic fluid is prepared from the following components including a silica source, tetrapropylammonium bromide and water, and the molar ratio of the silica source to tetrapropylammonium bromide to water is 1 to (0.1-5) to (10-2000); and 2) stirring the synthetic fluid for 10-60 minutes at room temperature, charging into a reaction kettle, putting a supporting body coated with a b axis oriented crystal seed layer into the reaction kettle, immersing the supporting body with the synthetic fluid, sealing the reaction kettle, carrying out heating synthesis, washing, and drying to obtain the oriented MFI type zeolite membrane on the supporting body, wherein the synthesis temperature is 120-200 DEG C, and the synthesis time is 12-72h. According to the method disclosed by the invention, the synthesized MFI type zeolite membrane has high b axis orientation, the used synthetic fluid is neutral and is small in damage on the surface of the supporting body and low in raw material cost, and the cost is easily lowered.
Owner:ZHEJIANG UNIV

MOCVD growth method of non-polar m-surface GaN based on gamma-surface LiAlO2 substrate

The invention discloses a growth method of a non-polar m-surface GaN film based on a gamma-surface LiAlO2 substrate, which mainly solves the problem of poor quality of the conventional non-polar m-surface GaN materials. The method comprises the following processing steps: (1) putting the gamma-surface LiAlO2 substrate into an MOCVD reaction chamber, and carrying out heat treatment on the substrate; (2) growing a low-temperature AlN nucleating layer with the thickness of 30-100nm and the temperature of 500-600 DEG C on the gamma-surface LiAlO2 substrate; (3) growing a high-temperature AlN layer with the thickness of 60-200nm and the temperature of 900-1050 DEG C on the low-temperature AlN nucleating layer; (4) growing an m-surface GaN buffer layer with the thickness of 1000-5000nm and the temperature of 900-1050 DEG C on the high-temperature AlN layer; (5) taking the substrate after the growth processes out of the reaction chamber, and corroding the substrate for 1-5 minutes in the molten KOH solution to form a transverse epitaxial region; and (6) putting the corroded substrate into the MOCVD reaction chamber, and carrying out secondary growth to form a non-polar m-surface GaN epitaxial layer with the thickness of 2000-5000nm and the temperature of 1000-1100 DEG C. The invention has the advantages of few defects and smooth surfaces and can be used for manufacturing m-surface GaN-based light-emitting diodes.
Owner:XIDIAN UNIV

Method for detecting Escherichia coli in milk based on ultraviolet-visible spectrum technology

InactiveCN108918444AFully consider interferenceFully consider the characteristicsColor/spectral properties measurementsEscherichia coliCorrection method
The invention provides a method for detecting Escherichia coli in milk based on an ultraviolet-visible spectrum technology. Under the complex background environment similar to that of the milk, the problems that detection spectra of microorganisms are affected by unfavorable factors, the phenomena of characteristic wavelength red shift, obvious noise and the like are generated, consequently spectral characteristics are difficult to pick up, and the accuracy of quantitative detection results is low can be effectively solved. The method comprises the steps that firstly, Escherichia coli powder is activated and subcultured, and a to-be-detected bacterium suspension is prepared; an ultraviolet spectrophotometer obtains ultraviolet-visible spectra of the to-be-detected bacterium suspension at different culture times; noise interference is eliminated through a standard normal correction method and an S-G convolution smoothing method; the spectral characteristic red shift phenomenon is explained from the angle of a formation mechanism of a benzene ring conjugated structure, and thus the characteristic waveband range is determined; the characteristic wavelengths are picked up in the characteristic waveband through a continuous projection algorithm, and the characteristic wavelengths are effectively screened according to the secondary growth law of the microorganisms; and the model relationship between the characteristic wavelengths and the total number of the microorganisms is established through a partial least squares method, and the total number of the Escherichia coli in the milk is quantitatively analyzed
Owner:HARBIN UNIV OF SCI & TECH

Secondary growth preparation method of X type molecular sieve film on stainless steel metal net

The invention pertains to the preparation field of an X-type molecule sieve membrane, which in particular relates to a secondary growth method for preparing the X-type molecule sieve on a stainless steel metal mesh using pre-coated seeds. The method comprises the steps of preparing a seed suspension liquid for X-type molecule sieve, dripping the suspension liquid on the pre-treated stainless steel metal mesh, baking the mesh on a resistance wire furnace for drying with forming a seed layer covering the stainless steel metal mesh so as to obtain the seed membrane and then placing the seed membrane in a secondary reaction solution synthesized by a molecule sieve membrane to carry out a reaction for 1 to 20 days at the temperature ranging from 70 to 85 DEG C so as to obtain the X-type molecule sieve membrane. In the method, the adoption of baking for pre-coating the seeds perfectly addresses the difficult issue of coating the seeds coating on metal carriers. The X-type molecule sieve membrane prepared in the method is thin and has good continuity and few defects. The X-type molecule sieve membrane with the stainless metal mesh as carrier is much thinner than those synthesized by using other carriers. Furthermore, the molecule sieve crystal membrane has a greater permeability due to a large effective area.
Owner:JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products