373results about How to "Improve surface topography" patented technology

The invention discloses a welding wire sending and pulverized solder sending laser cladding forming method. The method is characterized in that a conscope is used to change a solid laser beam transmitted by a laser to an annular light beam through light path transformation, then an annular focus lens is used to focus the annular light beam to an annular conical light beam, a hollow conical aphotic zone is formed in the annular conical light beam, a welding wire sending and pulverized solder sending protective gas composite nozzle is arranged in the aphotic zone and has the same axis of the annular conical light beam, a welding wire sending hole is arranged in the center, parallel pulverized solder sending holes are around the welding wire sending hole, collimating protective gas holes are parallel to and around the pulverized solder sending holes, wire is sent to a molten pool through the welding wire sending hole along the axial direction of the light beam and vertically to a machining face, airborne pulverized solder is sent to the molten pool through the pulverized solder sending holes at the same time, and collimating protective gas surrounds the welding wire and pulverized solder and is blown to the molten pool. The invention adopts the welding wire sending and pulverized solder sending protective gas composite nozzle to realize welding wire, pulverized solder and protective gas composite cladding and solve the defects of the prior art.

The invention relates to a silver doped grapheme-zinc oxide nano composite photocatalytic material and a method for preparing the same and belongs to the technical field of nano composite materials and photocatalysis. Graphite oxide is subjected to ultrasonic dispersion to obtain a dispersion solution of graphene oxide; precursors of silver ions and zinc ions are added in the dispersion solution of the graphene oxide, and the mixture is placed into a reaction kettle to be subjected to hydro-thermal treatment to be prepared into the silver doped grapheme-zinc oxide nano composite photocatalytic material in situ after the pH is regulated to an alkaline condition. Photocatalytic degradation experiments show that the silver doped grapheme-zinc oxide nano composite photocatalytic material prepared through the method has good adsorption and visible light photocatalytic degradation effects on rhodamine B and is an ideal nano composite photocatalytic material.

The invention discloses a graphene/titanate nanometer composite visible-light activated photocatalyst and a preparation method thereof, and belongs to the fields of nanometer composite materials and photocatalysis technology. The composite photocatalyst is prepared by compounding titanate and graphene, and the preparation method comprises the following steps: reacting tetrabutyl titanate with ammonia water to obtain a titanium hydroxyl compound; performing ultrasonic dispersion of graphene oxide in water, adding nitrate, stirring, mixing with the titanium hydroxyl compound and a potassium hydroxide aqueous solution, stirring, finally transferring the mixed solution into a reaction vessel to perform a hydrothermal reaction, after the reaction, performing centrifugation, filtration, washing, and vacuum drying of the product to obtain the composite photocatalyst. Photocatalytic degradation experiments show that the graphene/titanate composite photocatalyst prepared by the method has good photocatalytic degradation effect on rhodamine B under visible light irradiation. The photocatalyst of the invention has the advantages of relatively simple operation process, controllable morphology, no requirements for other reducing agents, and good visible-light activated photocatalysis performance.

The invention discloses a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a decoration layer, a perovskite layer, an electron transport layer, a barrier layer and a metal electrode. The surfaces of PEDOT: PSS, NiOx and the hole transport layer are decorated by ionic liquid based on imidazole, atomic force microscope graphs before and after the decoration are compared, and the decorated surface appearance is more smooth, which is conducive to inhibiting the compounding of dark current. The perovskite layer is a new perovskite material 3MAI: PbAc2.xH2O (x is not smaller than 0 and is not greater than 3), and is prepared by quickly preheating a substrate and heating a perovskite precursor solution, namely instant heating assisted spray coating technology (HASP) at a low temperature (lower than 100 DEG C), which is conducive to increasing the grain size of perovskite and reducing the defects between perovskite grains so as to greatly improve the efficiency of the perovskite battery. The photoelectric conversion efficiency of the final battery device is greater than 19%, the flexible device efficiency is 10.8%, no hysteresis effect is formed, and thus the preparation method has a broad application prospect.

The invention discloses a thin film transistor and a manufacture method, an array substrate and a display device thereof. The thin film transistor, the manufacture method, the array substrate and the display device are used for improving drive voltage stability of the thin film transistor and prolonging service life of the thin film transistor. The manufacture method of the thin film transistor includes forming a picture containing a grid electrode, an active layer and a source drain electrode layer and forming a picture containing a grid electrode insulation layer and an etching barrier layer. The grid electrode insulation layer is located between the grid electrode and the active layer, the etching barrier layer is located between the active layer and the source drain electrode layer, the grid electrode insulation layer is located above the active layer, the gride electrode insulation layer is manufactured by at least two insulation layers, or the etching barrier layer is located above the active layer and is manufactured by at least two insulation layers.

The invention relates to a graphene/hydroxyapatite nano composite and the preparation method thereof, particularly relates to a hydrothermal method for preparing graphene/hydroxyapatite nano composite through the assistance of amino acid, and belongs to the field of nano composite and biological material. According to the invention, graphene oxide is placed in deionized water for ultrasonic dispersion, and calcium chloride anhydrous is added for stirring, so as to form mixed solution A; amino acid is added into dilute phosphoric acid for stirring so as to form solution b, the dilute hydrochloric acid solution is used for adjusting the solution to enable the PH value to be 7.5 to 8.5, finally the mixed solution A and the mixed solution B are mixed to transfer into a polytetrafluoroethylene reaction kettle for hydro-thermal reaction, and after the reaction is finished, the composite can be obtained through centrifugating, cleaning and vacuum drying the product. The invention has the advantages that the operating process is relatively simple, the structure is controllable, the surface appearance is better, the specific surface area is larger, the dimension is even, and the like.

When forming sophisticated gate electrode structures requiring a threshold adjusting semiconductor alloy for one type of transistor, a recess is formed in the corresponding active region, thereby providing superior process uniformity during the deposition of the semiconductor material. Due to the recess, any exposed sidewall surface areas of the active region may be avoided during the selective epitaxial growth process, thereby significantly contributing to enhanced threshold stability of the resulting transistor including the high-k metal gate stack.

The invention discloses a preparation method of polycrystalline silicon. The method comprises the following steps of: undergoing a chemical vapor deposition reaction on trichlorosilane and high-purity hydrogen serving as raw materials at the high temperature of 1,050-1,250 DEG C and under the pressure of 0-0.8 MPa in a reduction furnace reactor; and depositing polycrystalline silicon on the surface of a heat-emitting silicon core. The method is characterized in that: 0.1-20 percent of hydrogen halide gas is introduced into a reduction furnace in a chemical vapor deposition process. According to method, silicon powder produced in the bulk phase of the reduction furnace can be suppressed effectively, an atomization phenomenon is eliminated, heat produced by reacting can be applied to deposition of polycrystalline silicon, the energy utilization efficiency and silicon depositing rate are increased, and the reaction temperature and the halogenated silane concentration are not required to be lowered; and due to etching of hydrogen halide on the surface of a silicon stick, the surface appearance is improved, and a dense polycrystalline silicon stick is obtained.

The invention relates to a static magnetic field-laser coaxial composite fusion covering method and a device and belongs to the technical field of laser processing. A static magnetic field is provided by an electromagnet, and the coaxial compositing of the magnetic field and a laser beam is realized through a device. When in magnetic field-laser coaxial fusion covering, the magnetic field generation device moves coaxially and synchronously with the laser beam, the coupling of the magnetic field and a laser-induced molten pool flow field can be completed, the laser fusion covering process is completed through a preset or coaxial powder delivery way, the flowing of the laser-induced molten pool can be inhibited, so that a purpose for controlling the solidification structure, improving the surface shape of the fuse covering layer, optimizing the distribution of the stress and reducing the splashing phenomenon in the fuse covering process can be realized. The coaxial synchronous motion of the magnetic field and the laser can be realized. The static magnetic field-laser coaxial composite fusion covering method and device have the characteristics of good capacity for controlling the fuse covering layer, wide application range, simplicity in structure, convenience in popularization and the like.

The growth rate in a selective epitaxial growth process for depositing a threshold adjusting semiconductor alloy, such as a silicon/germanium alloy, may be enhanced by performing a plasma-assisted etch process prior to performing the selective epitaxial growth process. For example, a mask layer may be patterned on the basis of the plasma-assisted etch process, thereby simultaneously providing superior device topography during the subsequent growth process. Hence, the threshold adjusting material may be deposited with enhanced thickness uniformity, thereby reducing overall threshold variability.

The invention discloses a GaAs substrate-based gallium oxide thin film and a growing method thereof, and mainly solves the problems of poor surface appearance and small grain size of an existing gallium oxide thin film. The gallium oxide thin film comprises a GaAs substrate (1) and a gallium oxide epitaxial layer (3), and is characterized in that a gallium oxide buffer layer (2) of 6 to 12 nm is arranged between the GaAs substrate (1) and the gallium oxide epitaxial layer (3), and the crystal quality of the gallium oxide buffer layer is improved by utilizing thermal annealing. The surface roughness of a Ga2O3 thin film is reduced, the surface appearance of the Ga2O3 thin film is improved, and the Ga2O3 grain size is increased; the GaAs substrate-based gallium oxide thin film and the growing method can be used for making semiconductor power devices.

The invention discloses a production method of a polysilicon rod, comprising the following steps: when the surface temperature of a silicon core is 1100-1250 DEG C, leading in hydrogen to react with trichlorosilane for 30-45 hours; when the silicon core grows to have the diameter of 50mm, stopping current, and adding hydrogen flow rate to continuously react for 3-10 hours; when the surface temperature of the polysilicon rod is reduced to1000-1050 DEG C, applying the current, reducing the hydrogen flow rate, raising the surface temperature of the polysilicon rod to about 1080-1100 DEG C and keeping the surface temperature of the polysilicon rod for 30 hours; stopping the current, and increasing the hydrogen flow rate again to react for 2-6 hours; when the surface temperature of the polysilicon rod is reduced to 970-1020 DEG C, reducing the hydrogen flow rate again, applying the current, raising the surface temperature of the polysilicon rod to 1050-1080 DEG C, and then keeping the surface temperature of the polysilicon rod till a reduction reactor is stopped. The production method of the polysilicon rod can obviously improve the surface appearance of solar polysilicon in the production process, and the surface bump area of the polysilicon can be controlled within 8 percent.

When forming high-k metal gate electrode structures in an early manufacturing stage, integrity of an encapsulation and, thus, integrity of sensitive gate materials may be improved by reducing the surface topography of the isolation regions. To this end, a dielectric cap layer of superior etch resistivity is provided in combination with the conventional silicon dioxide material.

A packaging method comprises the following steps of: preparing a finely pulverized powder, preparing a finely pulverized powder paste by the use of the finely pulverized powder, coating a packaging wire of cover lens by with the finely pulverized powder paste and glass paste, presintering the coated cover lens in vacuum, folding the cover lens which is presented in vacuum with a glass substrate, and carrying out laser scanning and packaging on the folded combination of the cover lens and the glass substrate. By the adoption of the packaging method, height inhomogeneities of the presentered packaging wire can be controlled within an ideal range and requirements on laser power when packaging is obviously reduced.