Thin film transistor and manufacture method, array substrate and display device thereof

Abstract

The invention discloses a thin film transistor and a manufacture method, an array substrate and a display device thereof. The thin film transistor, the manufacture method, the array substrate and the display device are used for improving drive voltage stability of the thin film transistor and prolonging service life of the thin film transistor. The manufacture method of the thin film transistor includes forming a picture containing a grid electrode, an active layer and a source drain electrode layer and forming a picture containing a grid electrode insulation layer and an etching barrier layer. The grid electrode insulation layer is located between the grid electrode and the active layer, the etching barrier layer is located between the active layer and the source drain electrode layer, the grid electrode insulation layer is located above the active layer, the gride electrode insulation layer is manufactured by at least two insulation layers, or the etching barrier layer is located above the active layer and is manufactured by at least two insulation layers.

Description

technical field [0001] The present invention relates to the field of thin film transistor manufacturing, in particular to a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] In pixel units of various display devices, a thin film transistor (Thin Film Transistor, TFT) that drives the display device by applying a driving voltage is widely used. Amorphous silicon (a-Si) materials with better stability and processability have been used in the active layer of TFTs, but the carrier mobility of a-Si materials is low, which cannot meet the needs of large-scale, high-resolution display devices requirements, especially the requirements of the next generation of active matrix organic light emitting display devices (Active Matrix Organic Light Emitting Device, AMOLED). [0003] Indium Gallium Zinc Oxide (In-Ga-Zn-Oxide, IGZO) thin film transistor (i.e. IGZO-TFT), because its active layer (IGZO) has high carrier ...

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Problems solved by technology

Moreover, the film formation quality of the contact interface between ESL and PVX and the active layer will also affect the performance and stability of IGZO-TFT

When the density of the ESL and PVX layers as insulating layers is low, harmful substances such as hydrogen (H) and H 2 O may diffuse into the active layer IGZO, or diffuse into the S / D layer where the source and drain are located, resulting in serious degradation of IGZO-TFT characteristics, resulting in problems such as unstable driving voltage and greatly reduced lifespan.

[0005] Moreover, when the quality of film formation at the interface between ESL and PVX and the active layer IGZO is poor, that is, when the surface morphology of the interface is poor, the stability and characteristics of IGZO-TFT will also be seriously reduced.

[0006] In the prior art, when ESL and PVX layers are made, plasma chemical vapor deposition (PECVD) is used to make ESL and PVX layers under high temperature conditions, such as 300°C-400°C, because the active layer and the ESL and PVX layers are both There is a contact surface, and the density of the ESL and PVX layers produced under high temperature conditions is better, but the film formation process under high temperature conditions, the surface morphology of the formed ESL layer and IGZO layer or PVX layer and IGZO layer is not very good, TFT performance and stability characteristics poor

Under low temperature conditions, the density of the prepared ESL and PVX layers is poor, and a certain amount of H or H cannot be avoided. 2 O, diffused into the IGZO layer of the TFT, resulting in serious deterioration of the characteristics of the IGZO-TFT, resulting in problems such as unstable driving voltage and a significant decrease in life.

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