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41772results about How to "High density" patented technology

Targeted and high density drug loaded polymeric materials

Polymeric delivery devices have been developed which combine high loading/high density of molecules to be delivered with the option of targeting. As used herein, “high density” refers to microparticles having a high density of ligands or coupling agents, which is in the range of 1000-10,000,000, more preferably between 10,000 and 1,000,000 ligands per square micron of microparticle surface area. A general method for incorporating molecules into the surface of biocompatible polymers using materials with an HLB of less than 10, more preferably less than 5, such as fatty acids, has been developed. Because of its ease, generality and flexibility, this method has widespread utility in modifying the surface of polymeric materials for applications in drug delivery and tissue engineering, as well other other fields. Targeted polymeric microparticles have also been developed which encapsulate therapeutic compounds such as drugs, cellular materials or components, and antigens, and have targeting ligands directly bound to the microparticle surface. Preferred applications include use in tissue engineering matrices, wound dressings, bone repair or regeneration materials, and other applications where the microparticles are retained at the site of application or implantation. Another preferred application is in the use of microparticles to deliver anti-proliferative agents to the lining of blood vessels following angioplasty, transplantation or bypass surgery to prevent or decrease restenosis, and in cancer therapy. In still another application, the microparticles are used to treat or prevent macular degeneration when administered to the eye, where agents such as complement inhibitors are administered.
Owner:YALE UNIV

Method for fabricating programmable memory array structures incorporating series-connected transistor strings

A three-dimensional flash memory array incorporates thin film transistors having a charge storage dielectric arranged in series-connected NAND strings to achieve a 4F2 memory cell layout. The memory array may be programmed and erased using only tunneling currents, and no leakage paths are formed through non-selected memory cells. Each NAND string includes two block select devices for respectively coupling one end of the NAND string to a global bit line, and the other end to a shared bias node. Pairs of NAND strings within a block share the same global bit line. The memory cells are preferably depletion mode SONOS devices, as are the block select devices. The memory cells may be programmed to a near depletion threshold voltage, and the block select devices are maintained in a programmed state having a near depletion mode threshold voltage. NAND strings on more than one layer may be connected to global bit lines on a single layer. By interleaving the NAND strings on each memory level and using two shared bias nodes per block, very little additional overhead is required for the switch devices at each end of the NAND strings. The NAND strings on different memory levels are preferably connected together by way of vertical stacked vias, each preferably connecting to more than one memory level. Each memory level may be produced with less than three masks per level.
Owner:SANDISK TECH LLC

Method for depositing an amorphous carbon film with improved density and step coverage

A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
Owner:APPLIED MATERIALS INC

Fluorene-based compound and organic electroluminescent display device using the same

The present invention relates to an organic electroluminescent (OEL) compound that comprises at least one fluorene derivative and at least one carbazole derivative. The compound has good electrical properties, light emitting properties and charge transport ability, and thus is suitable as a host material suitable for fluorescent and phosphorescent dopants of all colors including red, green, blue, white, etc., and as a charge transport material. An OEL display device that uses an organic layer that includes the OEL compound has a high efficiency, a low voltage, a high luminance, and a long lifespan because it has superior current density.
Owner:SAMSUNG DISPLAY CO LTD

Method for forming insulation film having high density

A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond selected from the group consisting of a Si—Si bond, Si—N bond, and Si—H bond; introducing into the reaction chamber an additive gas constituted by C, H, and optionally O; controlling a susceptor at a temperature of −50° C. to 50° C.; forming by plasma reaction an insulation film constituted by Si, O, H, and optionally N on an irregular surface of a substrate at a deposition rate of 100 nm / min or less; and heat-treating the substrate with the insulation film, thereby increasing a density of the insulation film to more than 2.1 g / cm3 as a result of the heat treatment.
Owner:ASM JAPAN

Wiring board and method for manufacturing the same

A wiring board for mounting a semiconductor element or electronic component having a plurality of wiring layers, an insulating layer provided between these wiring layers, and a via which is provided to the insulating layer and which electrically connects the wiring layers. In this wiring board, the cross-sectional shape of the via in the plane parallel to the wiring layers is obtained by the partial overlapping of a plurality of similar shapes (circles). Stable operation can be obtained in a semiconductor element by minimizing obstacles to increased density, effectively increasing the cross-sectional area of the via, and preventing the wiring resistance from increasing by making the cross-sectional shape of the via into a shape obtained by the partial overlapping of a plurality of similar shapes.
Owner:RENESAS ELECTRONICS CORP

Pulsed bias having high pulse frequency for filling gaps with dielectric material

During bottom filling of high aspect ratio gaps and trenches in an integrated circuit substrate using HDP-CVD, a pulsed HF bias is applied to the substrate. In some embodiments, pulsed HF bias is applied to the substrate during etching operations. The pulsed bias typically has a pulse frequency in a range of about from 500 Hz to 20 kHz and a duty cycle in a range of about from 0.1 to 0.95.
Owner:NOVELLUS SYSTEMS
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