767 results about "Antifuse" patented technology

A three dimensional monolithic memory comprising a memory cell allowing for increased density is disclosed. In the memory cell of the present invention, a bottom conductor preferably comprising tungsten is formed. Above the bottom conductor a semiconductor element preferably comprises two diode portions and an antifuse. Above the semiconductor element are additional conductors and semiconductor elements in multiple stones of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.

A low-cost memory cell array includes multiple, vertically-stacked layers of memory cells. In one form, each memory cell is characterized by a small cross-sectional area and a read current less than 6.3 microamperes. The resulting memory array has a slow access time and is well-suited for digital media storage, where access time requirements are low and the dramatic cost reductions associated with the disclosed memory arrays are particularly attractive. In another form, each memory cell includes an antifuse layer and diode components, wherein at least one diode component is heavily doped (to a dopant concentration greater than 1019 / cm3), and wherein the read current is large (up to 500 mA).

A reprogrammable metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. A lower barrier layer is formed from Ti. A lower adhesion-promoting layer is disposed over the lower Ti barrier layer. An antifuse material layer selected from a group comprising at least one of amorphous carbon and amorphous carbon doped with at least one of hydrogen and fluorine is disposed over the lower adhesion-promoting layer. An upper adhesion-promoting layer is disposed over the antifuse material layer. An upper Ti barrier layer is disposed over the upper adhesion-promoting layer.

An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably comprising two diode portions and an antifuse, then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.

A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the resistivity-switching material is a metal oxide or nitride compound, the compound including exactly one metal. The dielectric rupture antifuse is ruptured in a preconditioning step, forming a rupture region through the antifuse. The rupture region provides a narrow conductive path, serving to limit current to the resistivity-switching material, and improving control when the resistivity-switching layer is switched between higher- and lower-resistivity states.

Combinations, called matrices with memories, of matrix materials with remotely addressable or remotely programmable recording devices that contain at least one data storage unit are provided. The matrix materials are those that are used in as supports in solid phase chemical and biochemical syntheses, immunoassays and hybridization reactions. The matrix materials may additionally include fluophors or other luminescent moieties to produce luminescing matrices with memories. The data storage units are non-volatile antifuse memories or volatile memories, such as EEPROMS, DRAMS or flash memory. By virtue of this combination, molecules and biological particles, such as phage and viral particles and cells, that are in proximity or in physical contact with the matrix combination can be labeled by programming the memory with identifying information and can be identified by retrieving the stored information. Combinations of matrix materials, memories, and linked molecules and biological materials are also provided. The combinations have a multiplicity of applications, including combinatorial chemistry, isolation and purification of target macromolecules, capture and detection of macromolecules for analytical purposes, selective removal of contaminants, enzymatic catalysis, cell sorting, drug delivery, chemical modification and other uses. Methods for electronically tagging molecules, biological particles and matrix support materials, immunoassays, receptor binding assays, scintillation proximity assays, non-radioactive proximity assays, and other methods are also provided.

The present invention relates to an OTP ROM using a CMOS gate oxide antifuse. According to an embodiment of the present invention, in an OTP ROM cell having a first input terminal, a second input terminal and a third input terminal, wherein the OTP ROM stores data by means of a voltage applied to the first to third input terminals, the OTP ROM cell includes a cell access transistor having a gate and drain forming the second input terminal and a source forming the first input terminal, wherein the cell access transistor is activated by a voltage applied to between the gate and source, a high-voltage blocking transistor having a gate, a drain and a source connected to the drain of the cell access transistor, wherein the high-voltage blocking transistor allows the current to flow from the drain to the source by means of a bias voltage applied to the gate, thus blocking the high voltage applied to the third input terminal from being directly applied to the cell access transistor, and an antifuse transistor having a gate forming the third input terminal, and source and drain both of which are connected to each other and are then connected to the drain of the high-voltage blocking transistor, wherein a high voltage is applied to the third input terminal and if the cell access transistor is activated, gate oxide is broken and shorted.

A structure and method of fabricating reversible fuse and antifuse structures for semiconductor devices is provided. In one embodiment, the method includes forming at least one line having a via opening for exposing a portion of a plurality of interconnect features; conformally depositing a first material layer over the via opening; depositing a second material layer over the first material layer, wherein the depositing overhangs a portion of the second material layer on a top portion of the via opening; and depositing a blanket layer of insulating material, where the depositing forms a plurality of fuse elements each having an airgap between the insulating material and the second material layer. The method further includes forming a plurality of electroplates in the insulator material connecting the fuse elements. In another embodiment, the method includes depositing a first and a second material layer on a semiconductor substrate, wherein the second material layer having a higher electrical conductivity than the first material layer; selectively etching the first and second material layer to create at least one constricted region to facilitate electromigration of the second material; wherein the electromigration creates a plurality of micro voids; and forming a plurality of electrical contacts on the second material layer.