359 results about "Electronic properties" patented technology

The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and/or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).

A spin valve device includes a non-magnetic enhancement layer adjacent an ultra thin free layer. The thickness of the free layer may be less than the mean free path of a conduction electron through the free layer. The GMR ratio is significantly improved for free layer thicknesses below 50 Å. The enhancement layer allows electrons to travel longer in their spin state before encountering scattering sites. The electronic properties of the enhancement layer material can be matched with the adjacent free layer without creating a low resistance shunt path. Because the free layer may be made ultra thin and the enhancement layer is formed of a nonmagnetic material, less magnetic field is required to align the free layer, allowing for improved data density. Also, the enhancement layer allows for effective bias point control by shifting sensor current density distribution.

The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and/or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.

The present invention is directed to new methods for combining, processing, and modifying existing materials, resulting in novel products with enhanced mechanical, electrical and electronic properties. The present invention provides for polymer/carbon nanotube composites with increased strength and toughness; beneficial for lighter and/or stronger structural components for terrestrial and aerospace applications, electrically and thermally conductive polymer composites, and electrostatic dissipative materials. Such composites rely on a molecular interpenetration between entangled single-wall carbon nanotubes (SWNTs) and cross-linked polymers to a degree not possible with previous processes.

Fuse-type and antifuse-type semiconducting-organic-polymer-film-based memory elements for use in memory devices are disclosed. Various embodiments of the present invention employ a number of different techniques to alter the electrical conductance or, equivalently, the resistance, of organic-polymer-film memory elements in order to produce detectable memory-state changes in the memory elements. The techniques involve altering the electronic properties of the organic polymers by application of heat or electric fields, often in combination with additional chemical compounds, to either increase or decrease the resistance of the organic polymers.

A system and method for monitoring a security state of a portable electronic device (PED), such as a personal digital assistant (PDA), are provided. A security state may be determined by physical or electronic characteristics of the PED. The relative position of PED pieces, the position of a latch, and/or the status of a software application may determine a security state. Furthermore, a PED may have open, closed, and partially open security states. Information about a current security state of a PED may be transmitted to a point-of-sale device (POS), system processor, and/or financial institution. The PED or any of these other devices may use this information to determine whether to allow or restrict a financial transaction involving the PED. Additionally, a software program on the PED may be allowed or restricted from running depending on the information about the current security state.

Disclosed is an electronic real property viewing system for providing virtual tours of real property units via a public communications network such as the internet. The electronic property viewing system includes a system for affiliates to create their own virtual tours in real time by uploading photographs into a template, resulting in both movable and still photographs with accompanying data sets. Another embodiment of this invention involves the exchange of the creation and/or maintenance of such virtual tour available on a public communications network for occupation time units in the real property units.

The method and circuit for testing a TSV of the present invention exploit the electronic property of the TSV under test. The TSV under test is first reset to a first state, and is then sensed at only one end to determine whether the TSV under test follows the behavior of a normal TSV, wherein the reset and sense steps are performed at only one end of the TSV under test. If the TSV under test does not follow the behavior of a normal TSV, the TSV under test is determined faulty.

Poly(aryleneethynylene) polymers for exfoliating and dispersing/solubilizing nanomaterial are provided herein. The poly(aryleneethynylene) polymers have unit monomer portions, each monomer portion having at least one electron donating substituent thereby forming an electron donor monomer portion, or at least one electron withdrawing substituent thereby forming an electron accepting monomer portion. Such polymers exfoliate and disperse nanomaterial without presonication of the nanomaterial.

Embodiments disclosed herein include electronic device designs based upon electronic properties of Group III-N materials and quantum-mechanical effects of specialized heterostructures. Such electronic device designs may include, for example, heterojunction field-effect transistors (HFETs) and high-electron-mobility transistors (HEMTs). The design concepts permit high power, high-frequency, and high-temperature operation of advanced electronic circuits, including devices for radar, collision-avoidance systems, and wireless communications. Designs disclosed may include one or more AlN layers and/or one or more SMASH superlattice barriers combined with one or more n-type delta-doped regions. Alternately, in certain embodiments, one or more AlN layers and one or more SMASH superlattice barriers may be combined without the n-type delta-doped regions.

Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

The surface of a material is textured and by exposing the surface to pulses from an ultrafast laser. The laser treatment causes pillars to form on the treated surface. These pillars provide for greater light absorption. Texturing and crystallization can be carried out as a single step process. The crystallization of the material provides for higher electric conductivity and changes in optical and electronic properties of the material. The method may be performed in vacuum or a gaseous environment. The gaseous environment may aid in texturing and/or modifying physical and chemical properties of the surfaces. This method may be used on various material surfaces, such as semiconductors, metals and their alloys, ceramics, polymers, glasses, composites, as well as crystalline, nanocrystalline, polycrystalline, microcrystalline, and amorphous phases.

This invention is directed to a method of increasing the optical and electrical properties of carbon nanotube based transparent electrically conductive coating/films by modification of the applied single wall carbon nanotube (SWCnT) network through use of solvents and/or an expendable matrix structure.

A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A_1−x-B_x-chalcognide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≦0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcognide are described.

Provided herein is a method for altering an electronic property of a structure comprising an oxide surface or an oxide surface in electronic communication with the structure, the method comprising providing a covalently-bound film comprising at least one organic acid residue on a portion of the oxide surface so that at least one of the following properties of the structure is modified: (a) the charge carrier injection barrier properties; (b) the charge conductivity properties; (c) the charge transport properties; (d) the work function properties; (e) the sub-threshold slope; and (f) the threshold voltage.