363 results about "Electronic properties" patented technology

The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and / or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and / or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).

A spin valve device includes a non-magnetic enhancement layer adjacent an ultra thin free layer. The thickness of the free layer may be less than the mean free path of a conduction electron through the free layer. The GMR ratio is significantly improved for free layer thicknesses below 50 Å. The enhancement layer allows electrons to travel longer in their spin state before encountering scattering sites. The electronic properties of the enhancement layer material can be matched with the adjacent free layer without creating a low resistance shunt path. Because the free layer may be made ultra thin and the enhancement layer is formed of a nonmagnetic material, less magnetic field is required to align the free layer, allowing for improved data density. Also, the enhancement layer allows for effective bias point control by shifting sensor current density distribution.

The present invention provides methods for uniform growth of nanostructures such as nanotubes (e.g., carbon nanotubes) on the surface of a substrate, wherein the long axes of the nanostructures may be substantially aligned. The nanostructures may be further processed for use in various applications, such as composite materials. For example, a set of aligned nanostructures may be formed and transferred, either in bulk or to another surface, to another material to enhance the properties of the material. In some cases, the nanostructures may enhance the mechanical properties of a material, for example, providing mechanical reinforcement at an interface between two materials or plies. In some cases, the nanostructures may enhance thermal and / or electronic properties of a material. The present invention also provides systems and methods for growth of nanostructures, including batch processes and continuous processes.

Structures and methods for fabricating high speed digital, analog, and combined digital / analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and / or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and / or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).

The present invention is directed to new methods for combining, processing, and modifying existing materials, resulting in novel products with enhanced mechanical, electrical and electronic properties. The present invention provides for polymer / carbon nanotube composites with increased strength and toughness; beneficial for lighter and / or stronger structural components for terrestrial and aerospace applications, electrically and thermally conductive polymer composites, and electrostatic dissipative materials. Such composites rely on a molecular interpenetration between entangled single-wall carbon nanotubes (SWNTs) and cross-linked polymers to a degree not possible with previous processes.

The surface of a material is textured and by exposing the surface to pulses from an ultrafast laser. The laser treatment causes pillars to form on the treated surface. These pillars provide for greater light absorption. Texturing and crystallization can be carried out as a single step process. The crystallization of the material provides for higher electric conductivity and changes in optical and electronic properties of the material. The method may be performed in vacuum or a gaseous environment. The gaseous environment may aid in texturing and / or modifying physical and chemical properties of the surfaces. This method may be used on various material surfaces, such as semiconductors, metals and their alloys, ceramics, polymers, glasses, composites, as well as crystalline, nanocrystalline, polycrystalline, microcrystalline, and amorphous phases.

Fuse-type and antifuse-type semiconducting-organic-polymer-film-based memory elements for use in memory devices are disclosed. Various embodiments of the present invention employ a number of different techniques to alter the electrical conductance or, equivalently, the resistance, of organic-polymer-film memory elements in order to produce detectable memory-state changes in the memory elements. The techniques involve altering the electronic properties of the organic polymers by application of heat or electric fields, often in combination with additional chemical compounds, to either increase or decrease the resistance of the organic polymers.

A method and apparatus for automated procurement of information about electronic items such that the information is to be used in the population of consignment or personal inventory node database entries in a network of consignment nodes or personal inventory nodes for used and collectible electronic goods having inherent electronic networking capability using arbitrary set of protocol stacks / protocols. The invention describes a novel and unexpected use of a plurality of low cost posting / search / access terminals (laptops, PCs, PDAs, SUN computers etc) that had been so far used as manual entry stations serving the purpose of manual population of the said consignment node or personal social networking profiles by humans. The novelty of the invention describes the unexpected use of such terminals as themselves being the subject and source of automatically gleaned information suitable for the population of global consignment or personal inventory node databases. The present invention additionally claims the method and process of searching for and search methods used to find tangible electronic assets.

A system and method for monitoring a security state of a portable electronic device (PED), such as a personal digital assistant (PDA), are provided. A security state may be determined by physical or electronic characteristics of the PED. The relative position of PED pieces, the position of a latch, and / or the status of a software application may determine a security state. Furthermore, a PED may have open, closed, and partially open security states. Information about a current security state of a PED may be transmitted to a point-of-sale device (POS), system processor, and / or financial institution. The PED or any of these other devices may use this information to determine whether to allow or restrict a financial transaction involving the PED. Additionally, a software program on the PED may be allowed or restricted from running depending on the information about the current security state.

Methods and sensors for selective fluid sensing are provided. Each sensor includes a resonant inductor-capacitor-resistor (LCR) sensor that is coated with a sensing material. In order to collect data, an impedance spectrum is acquired over a relatively narrow frequency range, such as the resonant frequency range of the LCR circuit. A multivariate signature may be calculated from the acquired spectrum to discern the presence of certain fluids and / or fluid mixtures. The presence of fluids is detected by measuring the changes in dielectric, dimensional, resistance, charge transfer, and other changes in the properties of the materials employed by observing the changes in the resonant electronic properties of the circuit. By using a mathematical procedure, such as principal components analysis (PCA) and others, multiple fluids and mixtures can be detected in the presence of one another, even in a high humidity environment or an environment wherein one or more fluids has a substantially higher concentration (e.g. 10×, 1,000,000×) compared to other components in the mixture.

The present invention relates to an organic semiconductor thin film suitably employed in electronics, photonics, bioelectronics, or the like, and a method for forming the same. The present invention further relates to a solution for an organic semiconductor used to form the organic semiconductor thin film and an organic semiconductor device using the organic semiconductor thin film.The transistor of the present invention is manufactured by forming sequentially a gate electrode (2), an insulator layer (3), a source electrode and drain electrode (4, 4) on a glass substrate (5), applying thereto a 0.05% (by mass) solution of pentacene in o-dichlorobenzene and drying the solution to form an organic semiconductor thin film (1).The present invention provides a transistor with superior electronic characteristics because the organic semiconductor thin film (1), which can be formed easily at low cost, is almost free of defects.

Disclosed is an electronic real property viewing system for providing virtual tours of real property units via a public communications network such as the internet. The electronic property viewing system includes a system for affiliates to create their own virtual tours in real time by uploading photographs into a template, resulting in both movable and still photographs with accompanying data sets. Another embodiment of this invention involves the exchange of the creation and / or maintenance of such virtual tour available on a public communications network for occupation time units in the real property units.

The present invention relates generally to fabricating two-terminal electric microswitches comprising thin semiconductor films and using these microswitches to construct column-row (x-y) addressable microswitch matrices. These microswitches are two terminal devices through which electric current and electric potential (or their derivatives or integrals) can be switched on and off by the magnitude or the polarity of the external bias. The microswitches are made from semiconducting thin films in a electrode / semiconductor / electrode, thin film configuration. Column-row addressable electric microswitch matrices can be made in large areas, with high pixel density. Such matrices can be integrated with a sensor layer with electronic properties which vary in response to external physical conditions (such as photon radiation, temperature, pressure, magnetic field and so on), thereby forming a variety of detector matrices.

The method and circuit for testing a TSV of the present invention exploit the electronic property of the TSV under test. The TSV under test is first reset to a first state, and is then sensed at only one end to determine whether the TSV under test follows the behavior of a normal TSV, wherein the reset and sense steps are performed at only one end of the TSV under test. If the TSV under test does not follow the behavior of a normal TSV, the TSV under test is determined faulty.

Poly(aryleneethynylene) polymers for exfoliating and dispersing / solubilizing nanomaterial are provided herein. The poly(aryleneethynylene) polymers have unit monomer portions, each monomer portion having at least one electron donating substituent thereby forming an electron donor monomer portion, or at least one electron withdrawing substituent thereby forming an electron accepting monomer portion. Such polymers exfoliate and disperse nanomaterial without presonication of the nanomaterial.

Embodiments disclosed herein include electronic device designs based upon electronic properties of Group III-N materials and quantum-mechanical effects of specialized heterostructures. Such electronic device designs may include, for example, heterojunction field-effect transistors (HFETs) and high-electron-mobility transistors (HEMTs). The design concepts permit high power, high-frequency, and high-temperature operation of advanced electronic circuits, including devices for radar, collision-avoidance systems, and wireless communications. Designs disclosed may include one or more AlN layers and / or one or more SMASH superlattice barriers combined with one or more n-type delta-doped regions. Alternately, in certain embodiments, one or more AlN layers and one or more SMASH superlattice barriers may be combined without the n-type delta-doped regions.

Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.

The surface of a material is textured and by exposing the surface to pulses from an ultrafast laser. The laser treatment causes pillars to form on the treated surface. These pillars provide for greater light absorption. Texturing and crystallization can be carried out as a single step process. The crystallization of the material provides for higher electric conductivity and changes in optical and electronic properties of the material. The method may be performed in vacuum or a gaseous environment. The gaseous environment may aid in texturing and / or modifying physical and chemical properties of the surfaces. This method may be used on various material surfaces, such as semiconductors, metals and their alloys, ceramics, polymers, glasses, composites, as well as crystalline, nanocrystalline, polycrystalline, microcrystalline, and amorphous phases.

Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.

Structures and methods for fabricating high speed digital, analog, and combined digital / analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and / or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

This invention is directed to a method of increasing the optical and electrical properties of carbon nanotube based transparent electrically conductive coating / films by modification of the applied single wall carbon nanotube (SWCnT) network through use of solvents and / or an expendable matrix structure.

This invention relates to novel photochromic and electrochromic monomers and polymers based on 1,2-dithienylcyclopentene derivatives and method of using and synthesizing same. The compounds are reversibly interconvertible between different isomeric forms under suitable photochromic or electrochromic conditions. The electrochromic conversion may be catalytic. The application also relates to ultra-high density homopolymers prepared using ring-opening methathesis polymerization (ROMP) where the central ring of the 1,2-bis(3-thienyl)-cyclopentene is incorporated directly into the polymer backbone. The monomer units may be readily functionalized to enable the synthesis of polymers with diverse structural and electronic properties. The compounds have many potential applications including high-density optical information storage systems, photoregulated molecular switches, reversible holographic systems, ophthalmic lenses, actinometry and molecular sensors, photochromic inks, paints and fibers and optoelectronic systems such as optical waveguides, Bragg reflectors and dielectric mirrors.

A method of producing a metalloprotein inhibitor, the method comprising generating antibodies directed at a composition including a metal ion-bound chelator, wherein the composition is selected having structural and electronic properties similar to a functional domain of the metalloprotein, thereby producing the metalloprotein inhibitor.

A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1−x-Bx-chalcognide are described. A being a metal or transition metal or an alloy of metals and / or transition metals, B being a metal or transition metal B different from that of A and x being ≦0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcognide are described.