The invention relates to the technical field of
crystal material preparation, in particular to a layered
selenide Ge3Sb2Se5
semiconductor material and a preparation method thereof. The preparation method of the layered
selenide Ge3Sb2Se5
semiconductor material comprises the following steps:
grinding a Ge3Sb4Se7 material, putting the ground Ge3Sb4Se7 material into a
quartz tube, adding
iodine particles, performing vacuum packaging in the
quartz tube, putting one end, with raw materials, of the
quartz tube into a high-temperature region, and putting one end, without raw materials, of the quartz tube into a low-temperature region; raising the temperature to 400 + / -25 DEG C at the low-temperature region end and 500 + / -25 DEG C at the high-temperature region end, preserving heat for 7 days, and naturally cooling to
room temperature to obtain the Ge3Sb2Se5
semiconductor material. The
crystal structure of the Ge3Sb2Se5 semiconductor material belongs to an orthorhombic
system, and the Ge3Sb2Se5 semiconductor material has the characteristics of low
thermal conductivity and low resistivity. According to the preparation method disclosed by the invention, the Ge3Sb2Se5 semiconductor material can be stably prepared, and a material is provided for
physical property research of the Ge3Sb2Se5 semiconductor material and preparation of semiconductor photoelectric devices and the like.