607 results about "Crystal system" patented technology

The invention relates to the technical field of fluorescence sensing development, in particular to a Cd (II)-based metal organic framework crystalline material as well as a preparation method and application thereof. The chemical formula of the Cd (II)-based metal organic framework crystalline material is {[Cd3 (H2O) 2 (DMA) 2 (5-CMOIA) 2]. 6 / 5H2O} n, the organic framework material is characterized by an X-ray single crystal diffractometer, and the result shows that the organic framework material is crystallized in a triclinic system P-1 space group, the asymmetric unit of the organic framework material is composed of three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions, three Cd (II) ions and three The complex is composed of two deprotonated (5-CMOIA) 3-ligands, two coordinated DMA solvent molecules, two coordinated water molecules and six fifths of crystal water molecules. The solid fluorescence spectrum of the Cd (II)-based metal organic framework crystalline material is measured, the fluorescence response of the Cd (II)-based metal organic framework crystalline material to metal ions in a solution is explored, and the result shows that the Cd (II)-based metal organic framework crystalline material can effectively recognize Hg < 2 + > from different ions and can be applied to the field of fluorescence sensing.

The invention provides a baricitinib phthalate crystal form, and relates to the technical field of crystal form drug molecules. The crystal form is radiated by Cu-K alpha, and an X-ray diffraction pattern represented by 2 theta has characteristic peaks at 6.20 + / -0.2 degrees, 6.53 + / -0.2 degrees, 14.53 + / -0.2 degrees, 18.29 + / -0.2 degrees, 18.53 + / -0.2 degrees, 18.70 + / -0.2 degrees, 19.44 + / -0.2 degrees and 26.95 + / -0.2 degrees; the crystallographic measurement parameters are as follows: an orthorhombic system is adopted, and the space group is Pbcn; the cell parameters are as follows: # imgabs 0 # alpha = 90 degrees, beta = 90 degrees, gamma = 90 degrees, and the cell volume # imgabs 1 #. The invention also provides a related preparation method and application. The baricitinib phthalate crystal form disclosed by the invention is good in stability and relatively high in solubility and permeability.

The invention discloses a quantum computing chip based on a vertical micromirror, a system on a crystal and a simulator correction method thereof, a vertical micromirror structure with the roughness of less than 5nm can be formed by performing side wall smoothing on a deep etching vertical structure, and the loss of light irradiated on a side wall interface of a silicon-based optical device can be greatly reduced; a quantum computing chip is developed on a silicon wafer, another optical computing chip structure except macroscopic space optics and silicon-based optoelectronics is realized, the technological process is completely compatible with an advanced packaging technology, and photoelectric wafer level system integration of sensing, storage and computing can be realized. For an on-crystal system integrated with a quantum computing chip and an integrated circuit chip (and an optical sensing chip), crosstalk, loss and delay of TSV transmission signals are reduced through a vertical micro-mirror technology, indirect measurement of side wall roughness is realized through Fabry-Perot interference, an ideal on-crystal system simulator is corrected, and the measurement precision of the on-crystal system simulator is improved. And the simulation result of the simulator is closer to the real measurement result of the on-chip system.

The invention discloses a series of alkali metal borate compounds and alkali metal borate crystals as well as a preparation method and application thereof, and belongs to the technical field of photoelectric functional crystal materials. The chemical general formula of the series of compounds and crystals thereof is A3RE (B3O6) 2, wherein A is K, Rb, Cs or NH4; rE = Sc and Y, the molecular weight is 355.93-744.48, the series of crystals belong to a trigonal system, the space group is P321, the cell parameters a = b = 10.5237 (13)-135237 (13), and # imgabs0 # Z = 3. The series of alkali metal borate compounds are synthesized by adopting a solid-phase reaction method or a hydrothermal method, and the series of crystals grow by adopting a high-temperature melt method or a hydrothermal method or a solution method. The series of materials can be used for manufacturing second harmonic generators, upper and lower frequency converters, optical parametric oscillators, polarizing prisms and the like.

The invention relates to the technical field of mineral image recognition, in particular to a training method of a mineral selection recognition model based on multi-feature fusion. The method comprises the following steps: acquiring a mineral image; mineral crystal structure information of the mineral image is identified, geometric type division is carried out on the mineral crystal structure information, and mineral crystal system types are obtained; performing mineral crystal symbiosis identification on the mineral image according to the type of the mineral crystal system, evaluating a mineral crystal symbiosis relationship, and generating mineral crystal symbiosis data; mineral crystal grain connectivity analysis is conducted on the mineral crystal symbiosis data, and the mineral porosity is detected. Performing point-line-plane defect feature detection on the mineral image according to the mineral crystal system type to generate mineral point-line-plane defect features; according to the method, the ore selection recognition model is constructed through the multi-modal feature fusion technology, so that comprehensive recognition and analysis of the crystal structure, the symbiotic relationship, the morphological features and the surface abrasion of the minerals are achieved, and therefore the accuracy and efficiency of ore selection are improved.

The invention relates to a formamidine thiosulfate second-order nonlinear optical crystal and preparation and application thereof, the chemical formula of the crystal material is [CH (NH2) 2] 2SO3S, the molecular weight is 203.27, the crystal material belongs to an orthorhombic crystal system, the space group is P212121, the unit cell parameter is # imgabs 0 # alpha = beta = gamma = 90 degrees, Z = 4, and the unit cell volume is # imgabs 1 #. Under 1064nm laser irradiation, the frequency doubling intensity of the powder is about two times that of monopotassium phosphate crystals, and phase matching can be realized. In addition, the crystal material has a wide light transmission wave band, the ultraviolet absorption cut-off edge is 253 nm, the optical band gap is 4.90 eV, and the crystal material is easy to grow. The wavelength range of the coherent light source can be expanded by using optical frequency conversion technologies such as second harmonic generation and optical parametric amplification. Therefore, the crystal material has important application value in the fields of laser frequency conversion, photoelectric information storage and the like.

The invention relates to a compound selenium-indium-cesium and a selenium-indium-cesium infrared nonlinear optical crystal as well as a preparation method and application thereof. The molecular formula of the compound is CsIn5Se8, the molecular weight is 1338.69, the molecular formula of the crystal is CsIn5Se8, the molecular weight is 1338.69, the structure has an asymmetric center and belongs to a triclinic system, the space group is P1, and the cell parameters are as follows: a is 9.1506 (3), b is 9.1793 (3), c is 11.2778 (3), alpha is 89.9560 (10) degrees, beta is 72.0140 (10) degrees, gamma is 72.0340 (10) degrees, Z is 2, and the volume is 852.38 (5) 3. The crystal is prepared by adopting a high-temperature melt method, a chemical vapor transport method, a Bridgman-Stockbarger method or a fluxing agent method. The obtained selenium-indium-cesium infrared nonlinear optical crystal has the advantages of large nonlinear optical response, good crystal growth habit, good mechanical property, difficulty in fragmentation and deliquescence, easiness in processing and storage and the like, and can be used for manufacturing infrared nonlinear optical devices; the method has important application in the fields of photoelectric countermeasure, spectrum technology, laser communication, remote sensing distance measurement and the like.

The invention relates to the technical field of crystal material preparation, in particular to a layered selenide Ge3Sb2Se5 semiconductor material and a preparation method thereof. The preparation method of the layered selenide Ge3Sb2Se5 semiconductor material comprises the following steps: grinding a Ge3Sb4Se7 material, putting the ground Ge3Sb4Se7 material into a quartz tube, adding iodine particles, performing vacuum packaging in the quartz tube, putting one end, with raw materials, of the quartz tube into a high-temperature region, and putting one end, without raw materials, of the quartz tube into a low-temperature region; raising the temperature to 400 + / -25 DEG C at the low-temperature region end and 500 + / -25 DEG C at the high-temperature region end, preserving heat for 7 days, and naturally cooling to room temperature to obtain the Ge3Sb2Se5 semiconductor material. The crystal structure of the Ge3Sb2Se5 semiconductor material belongs to an orthorhombic system, and the Ge3Sb2Se5 semiconductor material has the characteristics of low thermal conductivity and low resistivity. According to the preparation method disclosed by the invention, the Ge3Sb2Se5 semiconductor material can be stably prepared, and a material is provided for physical property research of the Ge3Sb2Se5 semiconductor material and preparation of semiconductor photoelectric devices and the like.

The invention discloses a gadolinium boron molybdate magnetic refrigeration material with triangular magnetic resistance and a preparation method and application of the gadolinium boron molybdate magnetic refrigeration material. The chemical formula of the material is Gd2B2MoO9, the material belongs to a triclinic system, and the space group is P-1; the crystal structure has the characteristic that nearest rare earth Gd ions have magnetic resistance file; the material is prepared by a solid phase method or a sol-gel method; the magnetic phase change temperature of the material is 0.7-0.9 K, the material shows a remarkable magnetothermal effect at low temperature, the maximum isothermal magnetic entropy change values of the material are 30.0-35.0 J / kg.K and 51.0-55.0 J / kg.K respectively under the magnetic field change of 0-2T and 0-5T, and the material can be applied to low-temperature magnetic refrigeration. The gadolinium boron molybdate Gd2B2MoO9 material with triangular magnetoresistance provided by the invention has the advantages of low raw material price, simple process and lower equipment requirement, and is suitable for industrial production.

The invention provides an extremely-low-temperature magnetic refrigeration material with a pyrochlore structure, the chemical formula of the extremely-low-temperature magnetic refrigeration material is Ce2Sn2O7, the extremely-low-temperature magnetic refrigeration material belongs to a cubic system, and the space group of the extremely-low-temperature magnetic refrigeration material is Fd-3m. Compared with a traditional magnetic refrigeration material (paramagnetic salt hydrate), the novel extremely-low-temperature magnetic refrigeration material Ce2Sn2O7 of the pyrochlore structure has good magnetocaloric performance, can achieve 100 mK-level extremely-low-temperature refrigeration in the heat insulation and demagnetization actual measurement process, and meanwhile has the advantages of being compact in structure, high in stability, large in magnetic entropy density, easy to prepare and the like.

The invention discloses a method for refining grains of a titanium alloy. According to the method, an original low-oxygen-content titanium alloy plate is subjected to cryogenic pretreatment, the temperature of the core of the original low-oxygen-content titanium alloy plate is reduced to a certain temperature, then the cryogenic low-oxygen-content titanium alloy plate is fed into a rolling mill, the single-pass reduction rate is controlled, cryogenic rolling is completed, high refinement and uniform distribution of crystal grains are achieved, and the low-oxygen-content titanium alloy plate is obtained. And the rolled titanium alloy plate is subjected to subzero treatment again, and the titanium alloy plate of the complex twin crystal structure formed by intersection of {11-22} and {10-11} twin crystals is obtained. The method has the beneficial effects that under the synergistic effect of low oxygen and deep cooling, even under the extremely small deformation amount, the cross effect of various twin crystal systems can be efficiently activated, a high-density and complex twin crystal structure is formed, high refinement and uniform distribution of crystal grains are achieved, then the mechanical strength and low-temperature toughness of the material are remarkably improved, and the service life of the material is prolonged. And the application requirements in a severe low-temperature service environment are met.

The invention discloses a cobalt metal organic framework material and a preparation method and application thereof, and belongs to the technical field of metal organic framework material photocatalysts, the chemical formula of the cobalt metal organic framework material is [Co (L) (bibp)] n, wherein L is 4 '-(4-carboxyl phenoxy)-4-bibenzoic acid, bibp is 4, 4'-bis (imidazolyl) biphenyl, n represents the degree of polymerization and is a positive integer, and the cobalt metal organic framework material belongs to an orthorhombic system and an Fddd space group. According to the cobalt metal organic framework material and the preparation method and application thereof, the cobalt metal organic framework material can serve as a photocatalyst, has good photocatalytic performance and can serve as a potential photocatalyst to catalyze and degrade antibiotic pollutants in water.

The invention relates to a trimethylamine methanesulfonate second-order nonlinear optical crystal material and preparation and application thereof, the chemical formula of the crystal material is [(CH3) 3NH] < + > [SO3CH3] <->, the molecular weight is 154.21, the crystal material belongs to an orthorhombic crystal system, and the space group is Pca21 (No.29). According to the present invention, the powder frequency doubling effect of the nonlinear optical crystal [(CH3) 3NH] + [SO3CH3]-under 1064nm laser irradiation is about 0.5 time of the powder frequency doubling effect of the nonlinear optical crystal [(CH3) 3NH] + [SO3CH3]-under 1064nm laser irradiation, phase matching can be achieved, and the ultraviolet absorption cutoff edge is less than 200nm. The crystal material is easy to grow and shows important application value in the aspects of electro-optical modulation, holographic storage elements, frequency doubling devices and the like.

The invention discloses a cubic system single crystal turbine blade wall thickness ultrasonic detection method, which comprises the following steps: establishing a sound velocity model, carrying out wave velocity measurement on a standard sheet, and measuring an included angle omega between the vector direction of each wall thickness measurement point and a theoretical Y coordinate axis in a three-dimensional model, measuring a rotation angle alpha of a secondary dendritic crystal [100] of the part to be measured and a deviation angle theta between [001] orientation and a Z axis by adopting a Laue method or an XRD diffraction method, and substituting the included angle omega, the rotation angle alpha and the deviation angle theta of the Z axis into the sound velocity calculation model to obtain a real sound velocity of each wall thickness measurement point; and importing wall thickness data measured by the wall thickness gauge into a sound velocity model formula to obtain a corrected real wall thickness value. The method can solve the measurement error caused by anisotropy of the cubic system alloy, and has the advantages of high detection efficiency, low detection cost and the like.

The invention relates to a high-tolerance PMP hollow fiber degassing membrane and a preparation method and application thereof.The high-tolerance PMP hollow fiber degassing membrane comprises a body, one side of the body is an inner surface facing an inner cavity, the other side of the body is an outer surface, a non-directional zigzag channel is formed in the body, and the thickness of the degassing membrane is 10-50 microns; the O2 permeation rate of the degassing membrane is 10 to 100 ml / (min.bar.m < 2 >); the XRD crystallinity of the degassing film is not lower than 60%; the degassing film contains a crystal form I belonging to a tetragonal crystal system, wherein the crystal form I accounts for 60-98.5% of the whole crystal form; under the action that the air inlet pressure is 0.5 MPa, an isobutanol solution containing methyl orange serves as a standard solution to fill the outer surface of the hollow fiber degassing membrane, breakthrough time testing is conducted on the hollow fiber degassing membrane, and the breakthrough time of the hollow fiber degassing membrane is larger than 60 min. The degassing membrane disclosed by the invention is mainly suitable for being applied to the field of liquid systems with certain corrosivity and relatively active chemical properties, such as ceramic ink, UV ink and the like, and has the advantages of extreme tolerance, good degassing rate and relatively high degassing efficiency.

To provide an alumina aqueous dispersion useful in forming a refractory by firing ceramic or the like, without leaving residual carbon even when firing is carried out at a temperature of 600°C or below.SOLUTION: The present invention provides an alumina aqueous dispersion containing alumina particles as dispersed particles, i.e., an alumina aqueous dispersion satisfying the following characteristics: (1) an average particle size of the dispersed alumina particles measured on the basis of number of particles is in a range of 10 to 1000 nm, (2) crystal systems of the alumina particles when the alumina aqueous dispersion is dried at 100°C, are amorphous and / or x-alumina, (3) the pH of the alumina aqueous dispersion is in a range of 2.0 to 5.3, (4) the alumina aqueous dispersion contains an organic acid and an alkali, with the organic acid being formic acid or a combination of formic acid and acetic acid, and the alkali being ammonia and, (5) the concentration of alumina (Al2O3) contained in the alumina aqueous dispersion is 0.5 to 11.5 mass%, and a method of producing the same.SELECTED DRAWING: Figure 1

The invention belongs to the technical field of stress luminescent materials, and discloses a stress luminescent material film for recording stress information of a closed mechanical structure and a preparation method of the stress luminescent material film. The general formula of the stress luminescent material is SrAl2O4: Eu < 2 + >, Dy < 3 + >, the crystal structure belongs to a triclinic system, the activating agent is Eu < 2 + >, and the sensitizing agent is Dy < 3 + > ions. The method comprises the following steps: according to different mass ratios of M1 (SrAl2O4: Eu < 2 + >, Dy < 3 + >): M2 (polymer); the preparation method comprises the following steps: respectively weighing two compound raw materials, uniformly stirring and mixing, pouring into a fixed mold, and carrying out curing treatment in a vacuum environment of a drying oven at the temperature of 80 DEG C for 2 hours to obtain the stress luminescent film. The stress luminescence film can realize stress luminescence without a high threshold, and the stress luminescence intensity of the stress luminescence film can be self-recovered. The method is simple, and mass production is easy to realize.

To provide a ceramic having a high coefficient of thermal expansion and a low dielectric constant.SOLUTION: 50.0 to 90.0 mass% of 2MgO and SiO2, a total of 8.0 mass% or more of one of 7.0 to 14.0 mass% of ZrO2 and 10.0 to 50.0 mass% of Al2O3 or both of 14.0 mass% or less of ZrO2 and 50.0 mass% or less of Al2O3, and 3.0 to 15.0 mass% of one or more selected from Y2O3, CaO, CeO2, and HfO2, wherein a crystalline structure of the is a cubic structure. ZrO2.SELECTED DRAWING: None

Embodiments can relate to an improved hydroflux, additive or electroless plating assisted densification cold sintering process to densify powdered metals at lower compaction pressures and lower temperatures (e.g., 520 MPa and 140° C.). The process can involve inducing dissolution precipitation mechanisms at powder interfaces by introducing a transport phase (formed by the introduction of water during the process to suppress melting temperatures) that is not an aqueous solution. Particle interfaces in the cold sinter fuse together by the presence of the additional transport phase, thereby reducing the temperatures and pressures needed for compaction. Some embodiments involve the use of elements to form a eutectic at the desired low temperature, thereby stabilizing certain crystal structure shapes of isometric crystal systems, inducing rapid densification, and facilitating pore smoothing. Embodiments of the process can be used to generate a green compact via sintering that exhibits improved green strength.

The invention discloses a halogen bond action auxiliary molecule self-assembly method. The method comprises the following steps: selecting an organic multi-system small molecule material containing a pyridine group at the tail end as a halogen bond receptor; selecting a derivative of 1, 4-diiodobenzene as a halogen bond donor; the halogen bond acceptor and the halogen bond donor are dissolved in a solvent, heating, stirring and ultrasonic treatment are performed, after the solution is clarified and transparent, an assembly solution is obtained, and the solvent is slowly evaporated by controlling the environment temperature to obtain the eutecticum. The invention discloses a preparation method of a eutectic film, which is characterized in that a eutectic system is prepared into the eutectic film matched with a device structure by regulating and controlling a decompression sublimation film forming process. According to the halogen bond action auxiliary molecule self-assembly method, the synthesis process of molecules can be greatly reduced, the controllable accumulation among the molecules can be greatly improved, and the halogen bond action auxiliary molecule self-assembly method can be applied to ultrahigh-density information storage.

The invention provides a preparation method and application of a compound cesium ammonium fluoborate and a cesium ammonium fluoborate nonlinear optical crystal. The chemical formula of the compound is CsNH4B8O12F2; the chemical formula of the crystal is CsNH4B8O12F2, the crystal belongs to a trigonal system, the space group is P321, and the unit cell parameters are as follows: a = b = 6.5858 (4) + / -0.02, c = 7.8163 (6) + / -0.02, alpha = beta = 90 degrees, gamma = 120 degrees and Z = 1. The crystal is grown by adopting a vacuum high-temperature solution method, a room-temperature solution method or a hydrothermal method, and the ultraviolet transmission cut-off edge of the crystal is lower than 190 nm. The nonlinear optical effect of the crystal is about 2.5 times of that of KH2PO4 (KDP), and the shortest I-type phase matching wavelength is 175.5 nm. The crystal has the advantages of simple preparation method, low toxicity of used initial raw materials, small harm to human bodies, stable physical and chemical properties, uniaxial crystal, easiness in application and the like. The method can be widely applied to nonlinear optical devices such as ultraviolet and deep ultraviolet all-solid-state lasers, optical parametric oscillators and the like.

A quantum entanglement system comprising a laser system, a spontaneous parametric down conversion crystal system, and a thermal management system. The laser system is configured to generate a laser beam. The spontaneous parametric down conversion crystal system comprises a spontaneous parametric down conversion crystal configured to receive the laser beam at a spontaneous parametric down conversion crystal and generate an entangled photon pair in response to the spontaneous parametric down conversion crystal receiving the laser beam. The thermal management system is configured to maintain the spontaneous parametric down conversion crystal at an annealing temperature during a generation of the entangled photon pair. A translation system is configured to move a position of the spontaneous parametric down conversion crystal. A

The present invention relates to composite tungsten oxide particles containing a composite tungsten oxide represented by the general formula MxWyOz (wherein M element is one or more elements selected from the group consisting of alkali metal elements, alkaline earth metal elements, rare earth elements, Mg, Zr, Cr, Mn, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, In, Tl, Si, Ge, Sn, Pb, Sb, B, F, P, S, Se, Br, Te, Ti, Nb, V, Mo, Ta, Re, Be, Hf, Os, Bi, and I, 0.20 < = x / y < = 0.37, 2.2 < = z / y < = 3.3), and having a hexagonal crystal system, in which when observed in STEM-HAADF 0.01% to 10% inclusive of the Z contrast of W atoms is reduced to 95% or less of the average value.

The invention relates to the technical field of eutectic crystals, in particular to a eutectic crystal of VC and nicotinamide as well as a preparation method and application thereof, the eutectic crystal of VC and nicotinamide is a triclinic system, the space group is P1, the cell parameters are as follows: # imgabs 0 # alpha = 93.197 (6) degrees, beta = 94.030 (6) degrees, gamma = 97.352 (5) degrees, and the cell volume is # imgabs 1 #. The eutectic crystal is obtained by dissolving VC and nicotinamide in pure water, standing and crystallizing; the obtained eutectic crystal can be applied to cosmetics, health care products, food and medicines. The eutectic crystal provided by the invention has the advantages of no irritation, easy absorption and good stability.

The invention discloses a design method for defect passivation of a perovskite absorption layer based on a density functional theory, and relates to a design method for modifying a perovskite absorption layer material by adopting PbSO4 and PbCO3 based on the density functional theory so as to reduce defects and improve photoelectric properties. The invention aims to solve the problems of structural defects and performance reduction of the perovskite material caused by the influence of water molecules and oxygen in a working environment. According to the invention, a first principle is adopted, interaction of a heterojunction interface is explored from a microscale, and an electron orbital and charge transfer are analyzed in detail to reveal a modification mechanism. The heterostructure construction method is suitable for crystal materials of different crystal systems, multi-layer heterojunction structure construction of different crystal systems can be achieved, and the heterojunction structure is represented based on the density functional theory so as to analyze the performance of the heterojunction structure. The calculation mode adopted by the invention is effectively combined with the modern science and technology, the experiment cost and the time cost are greatly reduced, and the process operation is simple, convenient and adjustable.

This invention relates to a compound, magnesium gallium selenide (MgHgGa4Se8), and a magnesium gallium selenide (MgHgGa4Se8) infrared nonlinear optical crystal, along with their preparation methods and applications. The compound has the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol. The crystal, also with the molecular formula MgHgGa4Se8 and a molecular weight of 1135.46 g / mol, lacks a center of symmetry, belongs to the tetragonal crystal system, and has a space group of MgHgGa4Se8. Its cell parameters are α = β = γ = 90°, Z = 1, and its volume is determined by the high-temperature melt method, chemical vapor transport method, or crucible lowering method. This crystal exhibits advantages such as significant nonlinear optical effects, good crystal growth habit, good mechanical properties, high hardness, resistance to breakage and deliquescence, and ease of processing and storage. It can be used to fabricate infrared nonlinear optical devices, which have important applications in optoelectronic warfare, laser communication, and medical fields.

The invention belongs to the field of nonlinear optical materials, and relates to an ultraviolet nonlinear optical crystal material and a preparation method and application thereof. The chemical formula of the ultraviolet nonlinear optical crystal material is Zn (C5H4NO) 2, C5H4NO represents 4-hydroxypyridine, and the 4-hydroxypyridine and Zn < 2 + > are combined through a coordinate bond to form a [ZnN2O2] tetrahedron; the crystal belongs to an orthorhombic system, and the space group is Fdd2. The band gap of the ultraviolet nonlinear optical crystal material is 4.40 eV, the second harmonic generation is as high as 13.6 * KDP, the birefringence delta n = 0.073 at the wavelength of 532 nm, the birefringence delta n = 0.074 at the wavelength of 1064 nm, and the ultraviolet nonlinear optical crystal material presents a photoluminescence characteristic, and has phosphorescence with the service life of 558 ms and blue afterglow visible to naked eyes and as long as 5 s under exciting light with the wavelength of 330-420 nm. In addition, the ultraviolet nonlinear optical crystal material has very strong water resistance, thermal stability and environmental stability, and has a good application prospect in the field of nonlinear optical materials.

Embodiments can relate to an improved hydroflux, additive or electroless plating assisted densification cold sintering process to densify powdered metals at lower compaction pressures and lower temperatures (e.g., 520 MPa and 140° C.). The process can involve inducing dissolution precipitation mechanisms at powder interfaces by introducing a transport phase (formed by the introduction of water during the process to suppress melting temperatures) that is not an aqueous solution. Particle interfaces in the cold sinter fuse together by the presence of the additional transport phase, thereby reducing the temperatures and pressures needed for compaction. Some embodiments involve the use of elements to form a eutectic at the desired low temperature, thereby stabilizing certain crystal structure shapes of isometric crystal systems, inducing rapid densification, and facilitating pore smoothing. Embodiments of the process can be used to generate a green compact via sintering that exhibits improved green strength.

The invention belongs to the technical field of functional materials for direct conversion of heat energy and electric energy, and particularly discloses a room-temperature thermoelectric material Bi < 0.45 > Sb < 0.55 > Te < 1 > Se < 0.05 > and a preparation method thereof, the molecular formula is Bi < 0.45 > Sb < 0.55 > Te < 1 > Se < 0.05 >, the room-temperature thermoelectric material belongs to a trigonal system, and the space group is P-3m1; on the basis of a BiTe-based material, replacement doping of Sb is carried out, and excessive doping is carried out by using Bi atoms and Se atoms, so that the room-temperature thermoelectric material Bi < 0.45 > Sb < 0.55 > Te < 1 > Se < 0.05 > and an intercalation layer with a [Bi2] layer are obtained, and due to the existence of the intercalation layer, the content of Te is reduced in the process that the material has the performance of the [Bi2Te3] layer, the content of Te is about 43% and is obviously smaller than the content (75%) of Te in Bi2Te3; the ZT value of the room-temperature thermoelectric material at room temperature can reach 0.54, and the material becomes a thermoelectric material with potential commercial value.

The invention belongs to the technical field of chiral material preparation, and particularly relates to a one-dimensional bismuth-based chiral perovskite crystal and a preparation method and application thereof. The general formula of the chiral perovskite crystal is (R-beta-MPA) 2BiI5 or (S-beta-MPA) 2BiI5, the chemical formula of the chiral perovskite crystal is C18H28BiI5N2, the R-beta-MPA represents (R)-(+)-beta-methyl phenylethylamine, the S-beta-MPA represents (S)-(-)-beta-methyl phenylethylamine, the R-beta-MPA represents (R)-(+)-beta-methyl phenylethylamine, and the S-beta-MPA represents (S)-(-)-beta-methyl phenylethylamine. The crystallographic data of the (R-beta-MPA) 2BiI5 include that the crystal belongs to an orthorhombic crystal system and a P212121 space group, and the cell parameters are as follows: alpha is equal to 90 degrees, beta is equal to 90 degrees, and gamma is equal to 90 degrees; the crystallographic data of the (S-beta-MPA) 2BiI5 comprises that the crystal belongs to an orthorhombic crystal system and a P212121 space group, and the cell parameters are as follows: alpha is equal to 90 degrees, beta is equal to 90 degrees, and gamma is equal to 90 degrees.