33 results about "Optical coefficient" patented technology

The invention discloses acousto-optic chalcogenide glass with a high laser damage threshold, the chemical composition formula of the acousto-optic chalcogenide glass is GexSySez, x, y and z respectively represent the mole fractions of Ge, S and Se, x = 10-30, y = 5-40, z = 40-70, x + y + z = 100, and the microscopic network structure of the acousto-optic chalcogenide glass contains a [GeSe4] tetrahedron, a [GeSSe3] tetrahedron, a [GeS2Se2] tetrahedron, a [GeS3Se] tetrahedron, a [GeS4] tetrahedron and a Se ring. The acousto-optic chalcogenide glass provided by the invention has a relatively high laser damage threshold Fth (9.72-15.58 J / cm < 2 > at1550 / 20ns / 5kHz), a relatively low thermo-optic coefficient dn / dT and good acousto-optic characteristics and mechanical properties, is high in near-infrared band transmittance, and has a relatively high laser damage threshold while ensuring a high acousto-optic quality factor. The material can be used as a material basis for developing high-performance and high-stability infrared acousto-optic modulation devices.

The invention discloses a thin-film barium titanate electro-optical switch unit based on a composite electrode and an array thereof. The optical switch unit comprises a first waveguide optical fiber coupling module, a second waveguide optical fiber coupling module, an optical beam splitting module, an electro-optical phase shift region, an optical beam combining module, a third waveguide optical fiber coupling module and a fourth waveguide optical fiber coupling module. Wherein the composite electrode of the electro-optic phase shift region is composed of a metal electrode and a transparent conductive layer, the electrode is closer to the waveguide by utilizing the transparent characteristic of a transparent conductive material, the coupling of a light field and an electric field is effectively enhanced, and the extinction ratio is improved. Meanwhile, a barium titanate film with a high electro-optical coefficient is adopted as a waveguide material, and the performance is further optimized, so that the electro-optical switch unit has the excellent characteristics of low-voltage driving, high extinction ratio, low insertion loss and small size.

A temperature measurement device (1) comprises: a light emission unit (10) that generates coherent, continuous measurement-light; a light detection unit (30) that detects reflected light or transmitted light of the continuous measurement-light which is projected onto a sample (50) to be measured; and an analysis unit (42) that calculates a temperature distribution of the sample (50) to be measured on the basis of the intensity of the reflected light or the transmitted light detected by the light detection unit (30). The analysis unit (42) calculates the optical thickness of the sample (50) to be measured from a temporal change in the intensity of the reflected light or the transmitted light and, by using a refractive index distribution model representing the relationship between the optical thickness and a refractive index distribution in the thickness direction of the sample (50) to be measured at the time of a temperature change, calculates the refractive index distribution from the optical thickness, and calculates the temperature distribution of the sample (50) to be measured by converting the refractive index distribution into the temperature distribution on the basis of the thermo-optical coefficient of the sample (50) to be measured.

The application discloses a modulation-insensitive dual-mode waveguide optical switch and a preparation method thereof, and belongs to the technical field of planar optical waveguide devices. The switch is composed of a silicon wafer substrate, a polymer lower cladding layer, a polymer optical waveguide core layer and a polymer upper cladding layer from bottom to top, the polymer optical waveguide core layer is covered in the polymer upper cladding layer, and the refractive index of the polymer optical waveguide core layer is higher than that of the polymer upper cladding layer and the polymer lower cladding layer. The application utilizes the advantages of simple asymmetric directional coupling structure and asymmetric Y branch structure and the large thermal-optical coefficient of organic polymer materials, and realizes the modulation-insensitive switch of two signal optical modes through mode conversion by using the asymmetric Y branch when the heating electrode is modulated. The preparation process of the application is simple, only needs spin coating, photoetching and wet etching, effectively reduces the production cost, improves the production efficiency of the device, is favorable for large-scale batch production, and enables the mode signal optical switch to be applied to actual use.

The invention discloses a nano-bubble optical coefficient measurement method based on a multilayer spherical shell Mie theory, relates to the technical field of nano-bubble and nano-particle optical property measurement, and aims to solve the problem that an existing method cannot measure the optical property of a nano-bubble, the energy of laser absorbed by nano-particles is obtained according to the change of the transmission light intensity of the nano-particles, and the optical coefficient of the nano-bubble is measured according to the change of the transmission light intensity of the nano-particles. And substituting the refractive index field into an energy equation, obtaining the temperature and density in the nano-bubble forming process through a lattice Boltzmann method, and further obtaining the optical coefficient of the nano-particles wrapped by the nano-bubbles based on the multilayer spherical shell Mie theory according to the change condition of the refractive index field along with the degree.

The invention relates to chalcogenide glass with a low thermo-optical coefficient as well as a preparation method and application of the chalcogenide glass. The chalcogenide glass with the low thermo-optical coefficient is prepared from the following components in percentage by weight: 78 to 84 percent of Se; 12%-20% of Ge; and 4%-8% of As. Through specific component design, the thermo-optical coefficient is reduced, and the influence of temperature on the optical system is reduced, so that the wavefront distortion control precision of the optical system in an extreme temperature environment is ensured.

The present invention relates to the field of optical waveguide manufacturing technology, specifically disclosing an optical waveguide, a manufacturing method thereof, and an optical waveguide spot adapter. The optical waveguide is manufactured using silicon oxycarbide with a refractive index ranging from 1.457 to 2.7 (inclusive), exhibiting low transmission loss and a good thermo-optical coefficient. The optical waveguide is suitable for optical waveguide devices of various sizes and can be used for optoelectronic monolithic and hybrid integration. Furthermore, the optical waveguide can achieve single-mode transmission even with a large refractive index difference between the core and cladding, resulting in lower loss compared to standard single-mode fiber coupling. Furthermore, the provided optical waveguide manufacturing method utilizes a low process temperature during the manufacturing process, eliminating the need for high-temperature annealing and being compatible with IC manufacturing processes.

This invention discloses an ultra-low residual amplitude modulation waveguide-optical phase modulator, comprising a first electrode layer and a second electrode layer parallel to each other. An α-phase waveguide channel and a substrate layer are disposed between the first and second electrode layers. The optical axes of the α-phase waveguide channel and the substrate layer are both perpendicular to the plane of the first electrode layer. The difference between the thermo-optical coefficient of the α-phase waveguide channel and the thermo-optical coefficient of the substrate layer is less than a preset thermo-optical coefficient difference threshold. Part of the side of the α-phase waveguide channel is covered by the substrate layer. The electric field between the first and second electrode layers uniformly covers the entire α-phase waveguide channel and the substrate layer. The two ends of the α-phase waveguide channel serve as the input and output ends of the light beam, respectively. This invention, by changing the electric field application method and thermo-optical coefficient matching, fundamentally maintains the consistency of the interference phase, thereby significantly reducing the sensitivity of RAM signals to voltage and ambient temperature fluctuations.

The embodiment of the invention provides a chromophore compound, a preparation method of the chromophore compound, an organic electro-optical material and application of the organic electro-optical material, and relates to the technical field of materials. The chromophore compound comprises a conjugate bridge, and a receptor and a donor which are respectively connected to two ends of the conjugate bridge through chemical bonds, the donor comprises aniline and a derivative structure thereof, and the aniline and the derivative structure thereof comprise silyl ether groups. By introducing the silyl ether group into the donor, the chemical stability and thermal stability of the chromophore compound can be improved. Meanwhile, when the chromophore compound is applied to the organic electro-optical material, the organic electro-optical material can have low dipole moment, and the nonlinear optical performance of the organic electro-optical material is improved. Furthermore, the donor in the chromophore compound has strong electron donating ability and can be cooperated with the receptor, and the beta value of the chromophore compound can be effectively improved, so that the organic electro-optical material can generate a larger electro-optical coefficient subsequently.

The invention provides a gradient doped ferroelectric film device and a preparation method thereof, and relates to the technical field of optoelectronic devices. The gradient doped ferroelectric thin film device comprises a substrate, a buried oxide layer, a buffer layer and a ferroelectric thin film material layer which are sequentially stacked from bottom to top, impurity ions are doped in the ferroelectric film material layer, and the doping concentration of the impurity ions is sequentially increased from bottom to top. By adopting the gradient doping design increasing from bottom to top, the interface defect and the internal stress of the ferroelectric film are optimized, the problem of lattice mismatch between a common ferroelectric film and the substrate layer is solved, the crystal quality is improved, the electro-optical coefficient is enhanced, and the electro-optical effect is effectively improved.

The invention provides a chiral coupling ytterbium-doped optical fiber and a high-power optical fiber laser, and relates to the technical field of optical fibers. The ytterbium-doped optical fiber sequentially comprises a central fiber core, a plurality of spiral side cores, an inner cladding and an outer cladding from inside to outside, wherein the spiral side cores are spirally wound on the central fiber core along the axial direction of the central fiber core; wherein the basic mode refractive index of at least one spiral side core in the multiple spiral side cores is different from the refractive index of the central fiber core in a preset high-order mode, and the thermo-optical coefficient of the spiral side core with the refractive index different from the refractive index of the central fiber core in the preset high-order mode is larger than that of the central fiber core. The chiral coupling ytterbium-doped optical fiber provided by the invention can effectively remove a high-order mode in the central fiber core.

The invention provides a superlattice electro-optical thin film material and a composite film layer and an electro-optical component comprising the same. The superlattice electro-optical thin film material is composed of dielectric material layers and barium titanate layers which grow periodically and alternately, in each period, each barium titanate layer is provided with m unit cell layers, each dielectric material layer is provided with n unit cell layers, m is in the range of 5-50, and n is in the range of 1-20; wherein the material for the dielectric material layer is selected from scandate or strontium tantalum lanthanum aluminate. The electro-optical composite film layer based on the barium titanate superlattice structure solves the problem that the electro-optical performance of traditional barium titanate is degraded, and the electro-optical coefficient of the barium titanate film approaches or even exceeds the level of block barium titanate.

The invention discloses CsSnCl3 nanocrystal doped chalcogenide glass and acousto-optic application of the CsSnCl3 nanocrystal doped chalcogenide glass, the molar composition formula of the chalcogenide glass is 97 (0.8 GeS2-0.2 Sb2S3)-3 CsSnCl3, and CsSnCl3 nanocrystals separated out in situ through heat treatment are dispersed in the chalcogenide glass. The chalcogenide glass has the advantages as follows: the chalcogenide glass has excellent thermal mechanical properties and high robustness, the comprehensive characteristics are outstanding, the Vickers hardness, the elastic modulus, the thermo-optical coefficient, the laser damage threshold and other parameters of the chalcogenide glass are remarkably improved compared with those of current mainstream acousto-optic chalcogenide glass, and a guarantee is provided for stable operation of a device in a high-temperature and high-power environment; the CsSnCl3 nanocrystals are packaged by using the stable glass matrix, so that the problems that the Sn-based perovskite material is easy to oxidize in the environment and poor in stability are fundamentally solved; the material has good infrared acousto-optic comprehensive characteristics and an ultra-wide infrared transmission range, can be used as an acousto-optic medium to be applied to acousto-optic devices, and has a wide application prospect in the acousto-optic field.

The invention discloses a quantum dot-plasmon strong coupling device capable of electro-optical modulation and a preparation method thereof. The quantum dot-plasmon strong coupling device comprises a bottom silicon substrate, a silicon dioxide oxide layer, a lead zirconate titanate thin film, a metal interdigital electrode and a quantum dot light-emitting layer, and the bottom silicon substrate, the silicon dioxide oxide layer and the lead zirconate titanate thin film are sequentially arranged from bottom to top. The metal interdigital electrode is arranged in an interdigital grating array groove structure of the lead zirconate titanate film, and the quantum dot light-emitting layer is arranged in an area above a first groove and a second groove of the interdigital grating array groove structure. According to the quantum dot-plasmon strong coupling device, in the modulation performance, lead zirconate titanate serves as a relaxation ferroelectric material, the electro-optical coefficient of the relaxation ferroelectric material is far higher than that of a lithium niobate material, nanosecond-level ultra-high-speed response can be achieved, and the refractive index of the material can be adjusted in real time so as to be matched with the quantum dot energy level.

The present disclosure relates to an intraoral scanning system configured to determine a 3D graphical representation of a dental object. The system may include a handheld intraoral scanner configured to provide an invisible 2D image and a visible sub-scan of a dental subject; and one or more processors configured to determine a point cloud of the invisible 2D image and the visible sub-scans, determine a 3D finite element mesh, and align the point cloud with the 3D finite element mesh, where the 3D finite element mesh includes a plurality of finite elements, and where each finite element of the plurality of finite elements includes a plurality of vertices, determining one or more optical coefficients for each vertex of the plurality of vertices, and wherein the one or more optical coefficients correspond to a dental feature represented by the aligned point clouds; determining a triangular mesh representation of the aligned point clouds corresponding to the visible sub-scans, and wherein the triangular mesh representation comprises triangularly arranged vertices of the plurality of vertices; determining a tetrahedral mesh representation of the aligned point clouds corresponding to the invisible 2D image, and wherein the tetrahedral mesh representation comprises tetrahedral arranged vertices of the plurality of vertices; and wherein the 3D graphical representation is determined based on the triangular mesh representation and the tetrahedral mesh representation.

This invention provides a method based on MXene Ti 3 C 2 T x All-optical phase modulation device and modulation method for PDMS. This all-optical phase modulation device consists of a fiber interferometer and MXene Ti... 3 C 2 T x Two-dimensional materials, PDMS material composition, MXene Ti 3 C 2 T x Two-dimensional material was deposited onto the surface of coreless fiber II of the fiber interferometer. The surfaces of coreless fibers I and II of the fiber interferometer were also coated with PDMS material to complete the fabrication of an all-optical phase modulator. Based on MXene Ti... 3 C 2 T x The high photothermal conversion efficiency of two-dimensional materials and the high thermo-optical coefficient of PDMS material convert changes in excitation light into changes in the refractive index of PDMS material. The fiber optic interferometer senses the refractive index change of PDMS material, causing wavelength shift and phase change in the output interference spectrum. This invention optimizes the sensitivity of phase modulation, reduces device size, and enhances device reliability and practicality.

The invention provides an optical switch and a silicon optical chip, the optical switch comprises a first waveguide and a second waveguide, and the first waveguide and the second waveguide are arranged in parallel; the second waveguide comprises a main body and a first slot arranged in the main body; the first waveguide is made of a first material, the main body is made of the first material, and the first gap is filled with a second material; the thermo-optical coefficient of the first material is greater than that of the second material; the optical switch is sequentially provided with an input port area, an input coupling area, a non-coupling phase modulation area, an output coupling area and an output port area in the light propagation direction, and the input port area, the input coupling area, the non-coupling phase modulation area, the output coupling area and the output port area are all arranged on the first waveguide and the second waveguide. The width of the first waveguide in the uncoupled phase modulation area is 450 nanometers, and the width of the second waveguide in the uncoupled phase modulation area is 600 nanometers. The cost is reduced while the optical switch is realized.

Fatigue-resistant photoelastic soft materials are provided for soft robots and other sensing applications. The fatigue-resistant photoelastic soft materials include hydroscopic salt that allow the stress-optical coefficient of the fatigue-resistant photoelastic soft material to be tuned. The fatigue-resistant photoelastic soft materials include molecular entanglements that help to tune mechanical properties of the fatigue-resistant photoelastic soft materials.

The invention belongs to the technical field of crystal materials and optics, and relates to a potassium borate niobate electro-optical crystal and a preparation method and application thereof.The chemical formula of the potassium borate niobate electro-optical crystal is K3Nb3B2O12, the crystal belongs to a trigonal system, the space group is P31m, and the cell parameters are as follows: alpha = beta = 90 degrees, gamma = 120 degrees, Z = 1, Z = 1, Z = 1, Z = 1, and Z = 1. The potassium boron niobate electro-optical crystal has the characteristics of wide transmission range, high transmittance, large electro-optical coefficient and the like, has stable physical and chemical properties and thermal properties, is not easy to deliquesce, has good mechanical properties and is easy to process.

The invention discloses a groove-type micro-ring resonant cavity sensor, and relates to the field of optical waveguide sensors, the sensor comprises a coupling area integrated with an S-shaped bent waveguide and a groove-type micro-ring resonant cavity formed by a groove-type waveguide formed by waveguide ridges, and the groove and the cavity of the groove-type micro-ring resonant cavity are filled with an aqueous solution with a negative thermo-optical coefficient as an upper cladding. According to the invention, the optical coupling efficiency is optimized through the design of the S-shaped bent waveguide, and the energy of an optical field is highly converged in the groove, so that the interaction efficiency of light and a to-be-detected substance is improved, and the sensing sensitivity of the sensor is improved; meanwhile, the negative thermo-optic effect of the aqueous solution is utilized to accurately compensate the positive thermo-optic effect of silicon and silicon dioxide, so that the effect that the change rate of the effective refractive index to the temperature tends to zero is achieved, the sensing sensitivity of the sensor is further improved, and the problem that in a traditional scheme, sensing sensitivity improvement and temperature drift suppression contradict with each other is effectively solved.

The invention relates to the technical field of integrated optoelectronic devices, in particular to a silicon-organic polymer mixed slow light waveguide electro-optical modulator which comprises a silicon input and output waveguide, a grating type slow light silicon waveguide, a multi-mode interference waveguide, an organic electro-optical polymer cladding, a T-shaped metal modulation electrode and a silicon dioxide upper and lower cladding. The optical wave group speed is reduced through the grating type slow optical waveguide design, the photoelectric signal interaction is enhanced, and efficient modulation is achieved by combining the organic polymer with the high electro-optical coefficient. According to the invention, the modulation efficiency and bandwidth can be remarkably improved, the device size and power consumption are reduced, and the scene requirements of high-speed data center interconnection, high-performance calculation and the like are met.

According to the present invention, it is possible to provide a joined body in which a single crystal thin film having a high electro-optical coefficient is provided on a substrate. Furthermore, according to the present invention, it is possible to provide an optical modulator using the joined body and a method for manufacturing the joined body.　This joined body (1) comprises: a substrate (10) including a single crystal of a rock salt-type structure compound, a perovskite-type oxide, or a fluorite-type oxide on one main surface (10a); and a thin film (20) comprising a single crystal of barium titanate having a (100) orientation, the thin film (20) being provided on the main surface (10a) of the substrate (10). A ferroelectric domain (30) in a direction parallel to the main surface (10a) of the substrate (10) is present inside the thin film (20), and misfit dislocations (40) are present at an interface between the thin film (20) and the substrate (10).

The invention discloses a Na5Tb9F32 magneto-optical crystal and a preparation method and application thereof, the chemical formula of the Na5Tb9F32 magneto-optical crystal is Na5Tb9F32, the crystal is of a cubic structure, the space group structure is Fm-3m, and birefringence does not exist; the order of magnitude of the thermo-optical coefficient of the material reaches 10 <-6 > K <-1 >, and the Vierdet constant is 33-34 Rad.m <-1 >. T <-1 > at 1064nm; the uniform melt crystallization characteristic is realized. The Na5Tb9F32 magneto-optical crystal is of a cubic structure, and birefringence does not exist; the thermo-optical coefficient is small, and the system is suitable for a high-power and high-stability optical system; the crystals have consistent melt crystallization characteristics, and large-size crystals are easy to grow. The Na5Tb9F32 magneto-optical crystal can be prepared by adopting a well-known crystal growth method, is a novel magneto-optical material with great potential, and is very suitable for being used as a crystal element of a high-power and high-stability magneto-optical device.

The invention discloses an improved photoelastic coefficient testing method based on a Mach-Zehnder double-beam interference system, belongs to the field of optical measurement, and aims to solve the problems that errors are large and optical path difference components cannot be decoupled due to non-uniform stress in an existing photoelastic coefficient measuring technology. The method comprises the steps that S1, a Mach-Zehnder double-beam interference light path is built, and laser is divided into a test beam and a reference beam after passing through a polaroid; a to-be-tested transparent test piece is arranged in the test light beam; s2, applying uniformly distributed alternating stress to the transparent test piece to be tested through a stress application device; s3, the polarization direction is adjusted to be parallel to and perpendicular to the stress applying direction, the alternating current signal amplitude Vout of the photoelectric detector is collected through a lock-in amplifier, and light intensity change slopes k11 and k12 are calculated; s4, stress optical coefficients pi11 and pi12 are calculated; and S5, photoelastic coefficients p11 and p12 are calculated through matrix operation p = pic.

The application provides a kind of evaporation film thickness monitoring method and system, evaporation film thickness monitoring method includes: according to the oscillation frequency signal of quartz crystal probe in working time, obtain the first film thickness increment of substrate in working time;According to the first optical signal measured before and after coating of substrate in working time, and the first film thickness increment of substrate in working time, obtain optical coefficient;According to the second optical signal measured before and after coating of substrate in intermittent time, and optical coefficient, obtain the second film thickness increment of substrate in intermittent time;Quartz crystal probe is configured to have the working time and intermittent time of alternative connection, the rate of quartz crystal probe in intermittent time evaporation is less than its rate in working time evaporation.The evaporation film thickness monitoring method and system provided by the application solve the problem that the whole quartz crystal film thickness instrument system needs to replace quartz crystal probe more frequently in the prior art, which can affect continuous production and has high use cost.

The present invention provides a resin material and a preparation method therefor, an optical element, and an optical device. The resin material comprises a polyetherimide resin and inorganic particles, and the absolute value of the difference between the refractive index of the inorganic particles and the refractive index of the polyetherimide resin is less than or equal to 0.15. The resin material of the present invention has the advantages of a low thermal-optical coefficient and a high light transmittance.

The application discloses a hydrogen concentration detection sensor and a hydrogen concentration detection method, wherein the sensor comprises a substrate, a waveguide core layer arranged on the substrate, and a cladding layer covering the waveguide core layer; a subwavelength grating structure is formed in the waveguide core layer, the subwavelength grating structure supports modes and modes and can generate bimode interference, the material of the waveguide core layer has a positive thermal-optical coefficient, single-mode waveguides are coupled to two ends of the subwavelength grating structure, an asymmetric coupling structure is formed between the single-mode waveguides and the subwavelength grating structure, and the asymmetric coupling structure is used for exciting two modes of modes and modes; the material of the cladding layer has a negative thermal-optical coefficient, the surface of the cladding layer is decorated with a hydrogen-sensitive material layer, and the hydrogen-sensitive material layer can catalyze an exothermic oxidation reaction with hydrogen. The application converts the hydrogen concentration change into the shift of an interference peak wavelength, compared with a traditional sensor which only depends on a single physical effect, the sensitivity is greatly improved, the sensor is easy to be integrated on a chip, does not need external electric driving, and is intrinsically safe and reliable.

The application provides a kind of optical switch and silicon optical chip, optical switch includes first waveguide and second waveguide, first waveguide is arranged with second waveguide in parallel;Second waveguide includes main body and first gap arranged in main body;First waveguide is composed of first material, main body is composed of the first material, first gap is filled with second material;Thermal-optical coefficient of first material is greater than thermal-optical coefficient of second material;Along the direction of light propagation, optical switch is sequentially provided with input port area, input coupling area, non-coupling phase modulation area, output coupling area and output port area, input port area, input coupling area, non-coupling phase modulation area, output coupling area and output port area are all arranged on first waveguide and second waveguide;The width of first waveguide in non-coupling phase modulation area is 450 nanometers, and the width of second waveguide in non-coupling phase modulation area is 600 nanometers.The application realizes optical switch while reducing cost.

The invention provides an anti-interference high-voltage measuring system and method, and the method comprises the steps: calculating a to-be-measured voltage delta V through measuring the accumulated phase shift delta phi of linearly polarized light with the wavelength of lambda along the length of a transverse polarized optical fiber which is spirally arranged with the electro-optical coefficient of r and the pitch angle of xi in an electric field; the high voltage between two separated points is measured in a strong interference environment. Due to the adoption of a photoelectric conversion structure principle, the device is not easily interfered by a strong current environment, is high in measurement precision, and is suitable for measuring high-voltage alternating current (AC) voltage and direct current (dc) voltage. The device does not need a complex high-voltage insulation device, electrode arrangement or a capacitive voltage divider, and has the advantages of being simple in design, small in size, light in weight and easy to install.

This invention provides a resin material and its preparation method, an optical element, and an optical device. The resin material comprises polyetherimide resin and inorganic particles, wherein the absolute value of the difference between the refractive index of the inorganic particles and the refractive index of the polyetherimide resin is less than or equal to 0.15. The resin material of this invention possesses advantages such as low thermo-optical coefficient and high light transmittance.