67234 results about "Si substrate" patented technology

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal including a first ceramic seal layer and a second ceramic seal layer, wherein the second ceramic seal layer is located between at least the first ceramic seal layer and the first glass substrate; and wherein one or more of: (i) a thermal (TC) conductivity of the first ceramic seal layer is be less than a thermal conductivity of the first glass substrate, and wherein the thermal conductivity of the first glass substrate is less than a thermal conductivity of the second ceramic seal layer, so that the thermal conductivity of the second ceramic seal layer is greater than the thermal conductivity of the first substrate and greater than the thermal conductivity of the first ceramic seal layer; (ii) a thermal conductivity of the second ceramic seal layer is greater than a thermal conductivity of the first ceramic seal layer; and / or (iii) a ratio TDp1 / TDg, where TDp1 represents a thermal diffusivity (TD) of the second ceramic seal layer and TDg represents a thermal diffusivity of the first glass substrate, is at least 1.020 and wherein the thermal diffusivity of the second ceramic seal layer is greater than a thermal diffusivity of the first ceramic seal layer.

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure; a pump-out / evacuation tube extending at least partly into an aperture in one of the substrates; and a pump-out / evacuation tube seal. The pump-out / evacuation tube seal may include at least one of: (a) from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, wherein the pump-out tube seal comprises more TeO3 than TeO4 by wt. %; and / or (b) tellurium oxide and from about 10-50 wt. % vanadium oxide, wherein the pump-out tube seal by wt. % comprises more tellurium oxide than vanadium oxide, and wherein the vanadium oxide comprises VO2 and V2O5, and wherein more V in the pump-out tube seal is in a form of VO2 than V2O5. A substantially donut-shaped laser beam may be used to heat pump-out tube material in order to form a pump-out tube seal.

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal including a first seal layer and a second seal layer, wherein, for at least one location of the seal, the first seal layer has a first width and the second seal layer has a second width, wherein the first width of the first seal layer may be from about 2-20 mm, more preferably from about 3-10 mm, and possibly from about 4-8 mm.

The invention relates to the technical field of printed circuit board manufacturing and quality detection, in particular to a PCB forming detection method based on a hole site scatter diagram and SPC analysis, and the method comprises the steps: collecting the actual hole site data of a PCB substrate through an optical scanner or a laser measurement device, generating a scatter diagram containing coordinates, aperture and tolerance, and carrying out the detection of the hole site scatter diagram; an abnormal region is identified by using an improved density clustering algorithm; performing multi-dimensional analysis on the scatter diagram based on an SPC model, extracting characteristic parameters such as hole site density deviation, constructing a dynamic control limit, and calculating a CPK to judge a processing state; and when the CPK is lower than a threshold value, optimization instructions such as drilling path correction and drill bit wear compensation are generated and fed back to the equipment through the anti-saturation fuzzy PID controller to realize closed-loop control. According to the method, the hole site machining quality can be accurately detected, the machining parameters are adaptively adjusted, and the PCB forming precision and the production stability are effectively improved.

A method of making a vacuum insulating panel, the vacuum insulating panel comprising a first glass substrate, a second glass substrate, a plurality of spacers provided in a gap between at least the first and second glass substrates, and a seal provided between at least the first and second glass substrates, the seal comprising a first seal layer and / or a second seal layer. The method may include laser heating, using a laser beam from a continuous wave near-IR laser, seal material in order to form the first seal layer; wherein the laser heating may include causing the laser beam to move at a lateral speed of from about 5-70 mm / second relative to the substrates and the first seal material so that the laser beam at least partially passes through at least one of the glass substrates and impinges upon at least the second seal layer in order to heat the second seal layer and fire and / or sinter the first seal material thereby forming the first seal layer.

A method of making a vacuum insulating panel including a first substrate, a second substrate, a plurality of spacers provided in a gap between at least the first and second substrates, and a seal provided between at least the first and second substrates, the seal comprising a first seal layer, and optionally second and / or third primer layer(s). The method may include at least one of: (i) laser heating, using a laser beam from a laser, the first seal material for firing and / or sintering the first seal material to form the first seal layer, in a manner that causes TeO4>TeO3 in the first seal material to transform into TeO3>TeO4 due to said laser heating, whereby an amount of TeO4 decreases and an amount of TeO3 increases due to said laser heating, and / or (ii) laser heating in a manner that causes V2O5>VO2 in the first seal material to transform into VO2>V2O5 due to said laser heating whereby an amount of VO2 increases and an amount of V2O5 decreases due to said laser heating, so that after said laser heating the first seal layer comprises more VO2 than V2O5 by wt. %.

A method of making a vacuum insulating panel, the vacuum insulating panel including a first glass substrate, a second glass substrate, a plurality of spacers provided in a gap between at least the first and second glass substrates, and a seal provided between at least the first and second glass substrates, the seal comprising a first seal layer. The method may include: providing first seal material for the first seal layer in a location at least partially between at least the first and second glass substrates; laser heating, using a laser beam from a continuous wave near-IR laser, the first seal material in order to form the first seal layer; wherein said laser heating may comprise using the laser beam, having a size of from about 2-15 mm, so that the laser beam at least partially passes through at least one of the glass substrates to fire and / or sinter the first seal material thereby forming the first seal layer, in a manner so that the first seal layer a density of from about 2.8-4.0 g / cm3; and after forming the first seal layer, evacuating the gap to a pressure less than atmospheric pressure.

The invention belongs to the technical field of circuit boards, and discloses a composite pressing process of a high multilayer rigid-flex circuit board, which comprises the following steps: performing microstructure processing on the surface of a rigid base material to form a three-dimensional reinforced interface, and performing chemical grafting modification treatment on a flexible base material to generate a multilayer pretreated substrate; identifying the positioning mark of each layer of substrate through an optical positioning system, establishing a lamination stress prediction model in combination with the thermodynamic parameters of the material, and outputting a lamination configuration scheme containing an interlayer matching relationship; placing the configured laminated structure in a multi-temperature-zone press, and executing a three-stage gradient heating and pressurizing program to realize interface fusion between adjacent layers of substrates; monitoring an interlayer deformation difference value of the substrate in real time through a sensing network, and eliminating the deformation difference to obtain a press-fit molded circuit substrate; through heterogeneous interface strengthening design, multi-physical field cooperative pressing and real-time deformation compensation, accurate interface fusion and low-warpage forming of the high-multilayer rigid-flex circuit board are realized.

A vacuum insulating panel includes first and second substrates (e.g., glass substrates), a hermetic edge seal, a pump-out port, and spacers sandwiched between at least the two substrates. The gap between the substrates may be at a pressure less than atmospheric pressure to provide insulating properties. The vacuum insulating panel may include a multi-layer edge seal structure, including at least one layer including boron oxide (e.g., B2O3 or any other stoichiometry).

The invention discloses a 3D printing layered honeycomb sandwich panel and a processing method thereof. The processing method comprises the steps that a digital forming platform is constructed, process parameters are initialized, a functional interface layer is laid on a printing substrate in advance, a three-dimensional model is generated, and the printing substrate is divided into a plurality of gradient areas; collaborative printing of a lower panel structure is executed, and a composite panel base body is formed by adopting a multi-nozzle alternate deposition process; according to the characteristics of the divided gradient areas, honeycomb units are formed layer by layer by dynamically controlling printing rheological parameters, and a gradient honeycomb core layer is constructed; the cooperative growth of the upper panel and the gradient honeycomb core layer is realized by adopting a rotary incongruous printing strategy; the performance of the core layer material is regulated and controlled through a multi-stage heat treatment process, and the functional interface layer is activated to obtain the honeycomb sandwich panel; according to the honeycomb sandwich board, the mechanical property customized distribution of the honeycomb core layer is realized, the surface-core interface bonding strength is improved by combining the directional activation mechanism of the micro interlocking structure and the functional interface layer, and the honeycomb sandwich board with high mechanical property and thermal stability is provided.

The present disclosure provides a display substrate and a method of manufacturing the same, a display panel, and a display apparatus. The display substrate includes a base substrate, pixel units are arranged in an array on the base substrate, each pixel unit includes an anode, a light-emitting functional layer and a cathode, a pixel definition layer is provided, and has a plurality of openings, and each opening exposes a portion of an anode; the light-emitting functional layer is located in the opening; at least a portion of two opposite ends of the anode along a first direction is warped in a direction toward the cathode, an orthographic projection of the warped portion of the anode on the base substrate does not overlap with that of the cathode on the base substrate, and a hollow region is provided at a position of the cathode at least corresponding to the warped portion.

Semiconductor devices and systems with optical and electrical interposers, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes a glass substrate and a bridge die embedded in the glass substrate, where the glass substrate includes one or more optical waveguides and the bridge die includes an interconnect to electrically couple multiple integrated circuit dies.

A semiconductor package includes a first package substrate having a lower surface and an upper surface respectively including a plurality of first lower surface pads and a plurality of first upper surface pads, a second package substrate having a lower surface and an upper surface respectively including a plurality of second lower surface pads and a plurality of second upper surface pads, wherein the plurality of second upper surface pads comprise all of the upper surface pads at the upper surface of the second package substrate, a semiconductor chip provided between the first package substrate and the second package substrate and attached onto the first package substrate, and a plurality of metal core structures connecting some of the plurality of first upper surface pads to some of the plurality of second lower surface pads and not vertically overlapping any of the plurality of second upper surface pads, each metal core structure having a metal core.

The invention relates to the technical field of intelligent manufacturing, in particular to an HTCC ceramic defect automatic identification method based on industrial model assistance, which comprises the following steps: step 1, collecting sintering temperature gradient, lamination pressure and green body water content process parameters in the HTCC production process in real time; step 2, performing non-contact dielectric property scanning on the sintered HTCC substrate on a production line conveyor belt; 3, based on the coordinates of the dielectric abnormal region, controlling an annular polarization light source to inhibit the incident angle reflected by the metallization layer from irradiating the target region; 4, inputting the dielectric anomaly frequency band feature vector and the defect image texture feature in the step 3 into a cross-modal attention network to generate a fusion feature map; and 5, establishing an association mapping library of the defect type and the process deviation type. Through accurate real-time monitoring, intelligent defect identification and classification, automatic process adjustment and a continuously optimized feedback mechanism, the efficiency, quality and intelligent level of the ceramic production process are greatly improved.

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

The invention discloses an automatic chip thermocompression bonding device and an intelligent calibration method, and belongs to the field of semiconductor packaging and manufacturing. The device comprises a main body frame, an alignment vision system, a side vision system, a bonding arm and a workbench, and micron-order alignment and eutectic bonding of a chip and a substrate can be realized. A bonding arm adopts a vacuum suction nozzle to suck a chip, a substrate is fixed on a workbench through vacuum adsorption, an alignment visual system realizes automatic precision calibration and position feedback of the device by using a calibration sheet, and micron-sized alignment and intelligent matching of chip thermocompression bonding process parameters are realized by collecting image feature recognition. The workbench is finely adjusted to align the marking points of the chip and the substrate, then the bonding arm carries out the thermocompression bonding process, and meanwhile, the side vision system monitors the precision and reliability of chip bonding. The chip alignment precision is high, the method is suitable for the scene that multiple chips are bonded at the same time, the problem that the equipment calibration efficiency is low in the thermocompression bonding process can be solved, and the process reliability can be improved.

The invention relates to the technical field of ceramic substrates, and provides an aluminum oxide multilayer ceramic substrate and a preparation method thereof. The aluminum oxide multilayer ceramic substrate comprises the following raw materials in parts by weight: 80-90 parts of pretreated aluminum oxide, 1-4 parts of a sintering aid, 1-2 parts of a dispersing agent, 6-12 parts of a binder and 85-95 parts of a solvent, the preparation method of the pretreated aluminum oxide comprises the following steps: performing wet ball milling, drying, sintering and crushing on aluminum oxide, manganese sesquioxide, magnesium oxide and zirconium oxide to obtain the pretreated aluminum oxide. According to the technical scheme, the problem that the bending strength of the aluminum oxide multilayer ceramic substrate prepared from the aluminum oxide raw material with the purity of 95% in the related technology is low is solved.

The invention relates to the technical field of semiconductor mounting equipment, in particular to double-track die bonding equipment and a die bonding method. The double-track die bonding equipment comprises a bearing table, the bearing table is provided with a mounting area, a glue dipping area and a feeding area, and the glue dipping area and the feeding area are arranged adjacently and are adjacent to the same side of the mounting area; the mobile die bonding table assembly and the mobile transfer table assembly are arranged on the bearing table, the mobile die bonding table assembly comprises a first track, a second track, a first die bonding table and a second die bonding table, the first die bonding table is in sliding connection with the first track, and the second die bonding table is in sliding connection with the second track; the first track and the second track respectively extend from the glue dipping area to the mounting area. By introducing the design of the double die bonding tables which work alternately, glue dipping is only carried out on a partial area of the substrate each time, and chip mounting is immediately carried out on the partial area, so that the mounting quality and efficiency are ensured.

The invention discloses a method for preparing a copper-chromium-niobium alloy high-thermal-conductivity part based on green laser SLM, and relates to the technical field of copper-chromium-niobium alloys. Comprising the following steps that copper-chromium-niobium alloy powder is pretreated; the pretreated copper-chromium-niobium alloy powder is laid on a base plate, green laser is adopted for selective laser melting printing, at least two layers of printing parameters with different energy densities are set in a layered energy gradient control mode, layered printing is carried out, a pore structure with the porosity in continuous gradient distribution is formed, and a pre-machined part is obtained; wherein the wavelength of the green laser is 500 nm to 550 nm, and the spot diameter of the green laser is 15 [mu] m to 30 [mu] m; and the pre-machined part is subjected to heat treatment, and the high-heat-conduction part is obtained. The copper-chromium-niobium alloy part is prepared through the green laser SLM technology, the layered energy density gradient control technology is adopted, and the problems that in copper-based alloy additive manufacturing, the reflectivity is high, the structure is limited, and the performance is insufficient are systematically solved.

The invention provides a flexible temperature-sensitive device based on electrostatic automatic pattern filling, a temperature-sensitive device body comprises a temperature-sensitive material, a flexible substrate material and a packaging layer, the temperature-sensitive material is a temperature-sensitive particulate matter cluster, and temperature-sensitive material powder does not need to be prepared into slurry or ink. An electric field loaded by corona discharge can be deposited on the flexible substrate, the conductive electrode is automatically identified and avoided, and only the non-conductive substrate area is filled. According to the method, the use of an adhesive is avoided, the sensitivity of the flexible temperature-sensitive device is improved, the cost is low, the process is simple, the preparation time of the device is saved, the production efficiency is improved, meanwhile, heat accumulation between the temperature-sensitive device and the skin can be avoided, the measurement error is reduced, and the real and reliable temperature measurement is ensured; the temperature-sensitive device is not sensitive to stress and strain, decoupling of various external signal stimulation is achieved, and the accuracy of measured data of the temperature-sensitive device is improved.

The invention relates to the technical field of laser processing, and discloses a laser processing device and method suitable for TGV forming, and the method comprises the steps: S1, a glass substrate is scanned in a confocal manner, a three-dimensional topological graph is obtained, and the three-dimensional topological graph comprises the three-dimensional coordinate, the thickness gradient and the positioning mark of the glass substrate; s2, based on the three-dimensional topological graph, a through hole body is formed through ultraviolet femtosecond laser etching, and intermediate infrared laser is synchronously and dynamically controlled to etch the side wall of the through hole body to generate a taper through hole with a preset taper angle; and S3, the incident angle of the ultraviolet femtosecond laser is adjusted on the side wall of the taper through hole according to the three-dimensional topological graph, and a plurality of heat dissipation grooves are etched through the ultraviolet femtosecond laser. According to the laser processing device and method suitable for TGV forming, signal integrity optimization and active heat dissipation functions are achieved in the same through hole, the application range of the TGV is widened, and the stability of the TGV during use is improved.

The invention belongs to the technical field of semiconductors, and discloses a SiC power semiconductor module with low parasitic parameters and a preparation method. Comprising a SiC power semiconductor chip, a SiC power semiconductor chip substrate cushion block, a positive electrode power terminal, a negative electrode power terminal, an output power terminal, a positive electrode side middle layer cushion block, a positive electrode side ceramic decoupling capacitor, a positive electrode side substrate middle layer cushion block, a negative electrode side middle layer cushion block, a negative electrode side ceramic decoupling capacitor and a negative electrode side substrate middle layer cushion block. A first copper-clad ceramic substrate, a third copper-clad ceramic substrate, a fourth copper-clad ceramic substrate, a second copper-clad ceramic substrate, a first commutation loop middle copper layer and a second commutation loop middle copper layer; according to the invention, a commutation path is provided for the SiC power semiconductor device by using the middle layer copper of the laminated copper-clad ceramic substrate, the concept of mutual inductance offset of double commutation loops is innovatively introduced, and the parasitic inductance of the module is further reduced.

The present disclosure provides an optical component, which may be a metasurface grating, including (a) a substrate; and (b) an array of subwavelength-spaced phase-shifting elements, which are tessellated on the substrate to produce, when illuminated with a polarized incident light, a diffracted light beam with a distinct polarization state for each of a finite number of diffraction orders, wherein the finite number is 2 or more.

A microwave oven includes a housing defining an interior cavity, a magnetron positioned within the housing and outside of the interior cavity and a micro-wave antenna in electrical communication with the magnetron and positioned adjacent a lower surface of the interior cavity. The microwave oven further includes a heating plate that includes a glass-ceramic substrate defining at least a portion of the lower surface of the interior cavity. The heating plate further includes a resistive-heating coating applied on a portion of the glass-ceramic substrate and defining at least one open micro-wave transmissive path from the micro-wave antenna to the interior cavity.

The invention belongs to the technical field of non-oriented electrical steel manufacturing, and relates to a method for producing non-oriented silicon steel based on thin-strip cast rolling. The low-silicon and aluminum-free component design is adopted, the hot-rolled thin substrate is directly obtained through thin strip cast rolling, casting blank continuous casting and casting blank heating are omitted, the hot rolling reduction is greatly reduced, it is avoided that unfavorable textures of alpha and gamma components in the finished non-oriented silicon steel are remarkably improved, and the high magnetic induction of the finished product is guaranteed; after acid pickling and cold rolling, grain growth is promoted by means of high-temperature cover annealing, and low iron loss of a finished product is guaranteed; the high-magnetic-induction low-iron-loss non-oriented silicon steel with the thickness specification of 0.50 mm is obtained, the grain size of a finished product is 80-100 microns, the iron loss P1.5 / 50 is smaller than or equal to 4.0 W / kg, and the magnetic induction B5000 is larger than or equal to 1.76 T.

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).

The invention discloses a heat dissipation plate structure based on vein bionics, a manufacturing method thereof and a battery, the heat dissipation plate structure based on vein bionics comprises a substrate and an inner flow channel module arranged in the substrate, the inner flow channel module comprises an inner flow channel inlet and an inner flow channel outlet which are arranged at two ends of the substrate, the multiple stages of inner flow channels are arranged between the inner flow channel inlet and the inner flow channel outlet and are sequentially connected, and the upper stage of inner flow channel dispersedly extends to form a plurality of lower stage of inner flow channels which are dispersed in a vein shape. Distribution of fluid in the heat dissipation plate is effectively optimized, fluid resistance generated by fluid movement and runner friction is reduced, and therefore the heat dissipation efficiency and the uniformity of a temperature field are remarkably improved.

The invention relates to an optical engine and a forming method thereof, the optical engine comprises an adapter plate, an electric chip, an optical chip and a packaging substrate, the adapter plate comprises a first surface, a second surface opposite to the first surface, and a first through hole penetrating through the first surface and the second surface, the first surface of the adapter plate and the front surface of the electric chip are mounted on the optical chip and are electrically connected with the optical chip, and the second surface of the adapter plate is mounted on the packaging substrate and is electrically connected with the packaging substrate. According to the 3D fan-out type packaging optical engine integrated with the TSV adapter plate, the problems that an existing 3D fan-out type packaging optical engine is large in module size and cannot support the extremely high number of channels can be solved at the same time, and the problems that an existing 3D integrated optical engine with the TSV is high in cost and chip incoming materials are fixed can be solved at the same time.

The invention belongs to the field of metal powder hot isostatic pressing and additive manufacturing near-net forming, and discloses a hot isostatic pressing forming method for preparing a substrate for additive manufacturing by mixing SS-PREP and EIGA Ti6Al4V ELI spherical powder, which comprises the following steps of: 1, mixing Ti6Al4V ELI powder prepared by SS-PREP and Ti6Al4V ELI powder prepared by EIGA according to a proportion under atmosphere protection; 2, in vacuum vibration powder loading equipment, the mixed powder is loaded into a steel sheath, and degassing seal welding is carried out; step 3, placing the seal-welded sheath in hot isostatic pressing equipment, carrying out heat preservation and pressure maintaining sintering forming, and then carrying out gradient cooling; and 4, after cooling, the steel sheath is removed through machining, and the large-size substrate for additive manufacturing is obtained. The prepared substrate has excellent comprehensive mechanical properties which are higher than the level of traditional forgings, and the application requirements of additive manufacturing are met.