Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

88400 results about "Si substrate" patented technology

Si Substrate. Si substrates are promising materials for the heteroepitaxial growth of diamond due to their scalability, coefficient of thermal expansion, and cost.

Vacuum insulated panel with seal material thermal diffusivity and / or conductivity

A vacuum insulating panel may include: a first glass substrate; a second glass substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal including a first ceramic seal layer and a second ceramic seal layer, wherein the second ceramic seal layer is located between at least the first ceramic seal layer and the first glass substrate; and wherein one or more of: (i) a thermal (TC) conductivity of the first ceramic seal layer is be less than a thermal conductivity of the first glass substrate, and wherein the thermal conductivity of the first glass substrate is less than a thermal conductivity of the second ceramic seal layer, so that the thermal conductivity of the second ceramic seal layer is greater than the thermal conductivity of the first substrate and greater than the thermal conductivity of the first ceramic seal layer; (ii) a thermal conductivity of the second ceramic seal layer is greater than a thermal conductivity of the first ceramic seal layer; and / or (iii) a ratio TDp1 / TDg, where TDp1 represents a thermal diffusivity (TD) of the second ceramic seal layer and TDg represents a thermal diffusivity of the first glass substrate, is at least 1.020 and wherein the thermal diffusivity of the second ceramic seal layer is greater than a thermal diffusivity of the first ceramic seal layer.
Owner:LUXWALL INC

Vacuum insulated panel with seal for pump-out tube and / or method of making same

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure; a pump-out / evacuation tube extending at least partly into an aperture in one of the substrates; and a pump-out / evacuation tube seal. The pump-out / evacuation tube seal may include at least one of: (a) from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, wherein the pump-out tube seal comprises more TeO3 than TeO4 by wt. %; and / or (b) tellurium oxide and from about 10-50 wt. % vanadium oxide, wherein the pump-out tube seal by wt. % comprises more tellurium oxide than vanadium oxide, and wherein the vanadium oxide comprises VO2 and V2O5, and wherein more V in the pump-out tube seal is in a form of VO2 than V2O5. A substantially donut-shaped laser beam may be used to heat pump-out tube material in order to form a pump-out tube seal.
Owner:LUXWALL INC

Vacuum insulated panel with optimized seal width(s)

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal including a first seal layer and a second seal layer, wherein, for at least one location of the seal, the first seal layer has a first width and the second seal layer has a second width, wherein the first width of the first seal layer may be from about 2-20 mm, more preferably from about 3-10 mm, and possibly from about 4-8 mm.
Owner:LUXWALL INC

Semiconductor circuit structure with direct die heat removal structure

Semiconductor circuit structures with direct die heat removal structure are provided. The semiconductor circuit structure comprises a semiconductor substrate with an original semiconductor surface; a set of active regions within the semiconductor substrate; and a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction. Wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2.
Owner:INVENTION & COLLABORATION LABORATORY INC

Liquid crystal display screen defect detection method

The invention discloses a liquid crystal display screen defect detection method, and relates to the technical field of liquid crystal display screen defect detection.A bidirectional polarization transmission structure light source is adopted to project 0-degree and 90-degree polarized light, interference of parasitic reflection on defect detection is reduced, and a self-adaptive exposure control unit is introduced; exposure parameters are adjusted in real time according to the light transmittance and reflection characteristics of the glass substrate, the imaging quality is optimized, and the detection effect is prevented from being affected by overexposure or underexposure; in the image processing stage, parasitic reflection information is extracted by combining a polarization difference algorithm of double-frame subtraction, high-frequency interference is removed by using fast Fourier transform (FFT), an optimized defect image after parasitic reflection suppression is obtained, real defect information is more prominent, and the defect contrast is improved; multi-scale Gaussian fitting filtering, a gradient lifting method and super-resolution reconstruction are adopted to enhance defect features in the image, so that a low-contrast defect area is easier to identify.
Owner:JIANGXI HUASHI OPTOELECTRONICS CO LTD

A system and method for quickly testing the hydrolysis resistance of LED chips

The present invention discloses a system and method for quickly testing the anti-hydrolysis performance of LED chips, wherein the system comprises: a temperature and humidity regulator, the temperature and humidity regulator is provided with a cavity; a rotating device connected to the inner wall of the cavity, the rotating device can rotate along the inner wall of the cavity; a bracket, the bracket is a cup-shaped structure, the LED chip is mounted on the bracket and forms a conductive connection with the bracket; a test substrate, the bracket is fixed on the test substrate, and the bracket is conductively connected to the test substrate, and the test substrate is connected to the rotating device; the direction of the LED chip is adjusted by the rotating device, a reverse voltage is passed to the test substrate, and the temperature and humidity in the cavity are adjusted to perform an impact test on the LED chip. The direction of the LED chip is adjusted by the rotating device, and the hydrolysis speed of the LED chip is effectively accelerated, thereby shortening the detection time.
Owner:FOSHAN NATIONSTAR SEMICONDUCTOR CO LTD

PCB forming detection method based on hole site scatter diagram and SPC analysis

The invention relates to the technical field of printed circuit board manufacturing and quality detection, in particular to a PCB forming detection method based on a hole site scatter diagram and SPC analysis, and the method comprises the steps: collecting the actual hole site data of a PCB substrate through an optical scanner or a laser measurement device, generating a scatter diagram containing coordinates, aperture and tolerance, and carrying out the detection of the hole site scatter diagram; an abnormal region is identified by using an improved density clustering algorithm; performing multi-dimensional analysis on the scatter diagram based on an SPC model, extracting characteristic parameters such as hole site density deviation, constructing a dynamic control limit, and calculating a CPK to judge a processing state; and when the CPK is lower than a threshold value, optimization instructions such as drilling path correction and drill bit wear compensation are generated and fed back to the equipment through the anti-saturation fuzzy PID controller to realize closed-loop control. According to the method, the hole site machining quality can be accurately detected, the machining parameters are adaptively adjusted, and the PCB forming precision and the production stability are effectively improved.
Owner:FUJIAN FUQIANG PRECISION PRINTED CIRCUIT BOARD CO LTD

Method of making vacuum insulated panel with optimized laser speed

A method of making a vacuum insulating panel, the vacuum insulating panel comprising a first glass substrate, a second glass substrate, a plurality of spacers provided in a gap between at least the first and second glass substrates, and a seal provided between at least the first and second glass substrates, the seal comprising a first seal layer and / or a second seal layer. The method may include laser heating, using a laser beam from a continuous wave near-IR laser, seal material in order to form the first seal layer; wherein the laser heating may include causing the laser beam to move at a lateral speed of from about 5-70 mm / second relative to the substrates and the first seal material so that the laser beam at least partially passes through at least one of the glass substrates and impinges upon at least the second seal layer in order to heat the second seal layer and fire and / or sinter the first seal material thereby forming the first seal layer.
Owner:LUXWALL INC

Ion gel film with microstructure on the surface, preparation method and ionization sensor

The present invention belongs to the field of sensors, and relates to an ion gel film with a microstructure on the surface, a preparation method, and an ion-type sensor. The preparation method comprises: sandblasting on a precursor substrate to obtain a substrate, forming a mixed solution of a polymer and an ionic liquid on the substrate to obtain a wet film, and drying and curing the wet film to obtain an ion gel film, wherein the precursor substrate has an arc-shaped recess array, and the sandblasting conditions include: the sandblasting particle size is 5000 mesh to 10000 mesh, and the sandblasting pressure is 2 bar to 10 bar. The ion gel film is used for an ion-type sensor, which can improve the detection sensitivity of the sensor.
Owner:WUTONG SENSATION CONTROL (BEIJING) TECH CO LTD +1

Display panel and display device

The embodiment of the invention provides a display panel and a display device, the display panel comprises a substrate, an isolation structure, a light-emitting function layer, a touch control layer and a light-transmitting shielding layer, the isolation structure is arranged on one side of the substrate, and a plurality of limiting openings and a plurality of light-transmitting openings are defined by the isolation structure; the light-emitting functional layer comprises a plurality of light-emitting parts, and the light-emitting parts are at least partially arranged in the limiting openings; the touch layer is arranged on the side, away from the substrate, of the isolation structure; the light-transmitting shielding layer is arranged between the isolation structure and the touch control layer, and the light-transmitting shielding layer shields at least part of the light-transmitting opening in the direction from the touch control layer to the substrate. According to the display panel, the radio frequency interference between the touch control layer and the driving circuit layer can be avoided or reduced through the light-transmitting shielding layer, and the quality of images displayed by the display panel is improved.
Owner:HEFEI VISIONOX TECH CO LTD +1

Integrated dry processes for patterning radiation photoresist patterning

Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
Owner:LAM RES CORP

Method of making vacuum insulated panel using laser processing of seal material to change stoichiometry and / or oxidation state(s)

A method of making a vacuum insulating panel including a first substrate, a second substrate, a plurality of spacers provided in a gap between at least the first and second substrates, and a seal provided between at least the first and second substrates, the seal comprising a first seal layer, and optionally second and / or third primer layer(s). The method may include at least one of: (i) laser heating, using a laser beam from a laser, the first seal material for firing and / or sintering the first seal material to form the first seal layer, in a manner that causes TeO4>TeO3 in the first seal material to transform into TeO3>TeO4 due to said laser heating, whereby an amount of TeO4 decreases and an amount of TeO3 increases due to said laser heating, and / or (ii) laser heating in a manner that causes V2O5>VO2 in the first seal material to transform into VO2>V2O5 due to said laser heating whereby an amount of VO2 increases and an amount of V2O5 decreases due to said laser heating, so that after said laser heating the first seal layer comprises more VO2 than V2O5 by wt. %.
Owner:LUXWALL INC

Method of making vacuum insulated panel with optimized laser beam size

A method of making a vacuum insulating panel, the vacuum insulating panel including a first glass substrate, a second glass substrate, a plurality of spacers provided in a gap between at least the first and second glass substrates, and a seal provided between at least the first and second glass substrates, the seal comprising a first seal layer. The method may include: providing first seal material for the first seal layer in a location at least partially between at least the first and second glass substrates; laser heating, using a laser beam from a continuous wave near-IR laser, the first seal material in order to form the first seal layer; wherein said laser heating may comprise using the laser beam, having a size of from about 2-15 mm, so that the laser beam at least partially passes through at least one of the glass substrates to fire and / or sinter the first seal material thereby forming the first seal layer, in a manner so that the first seal layer a density of from about 2.8-4.0 g / cm3; and after forming the first seal layer, evacuating the gap to a pressure less than atmospheric pressure.
Owner:LUXWALL INC

Vibrator, vibration unit equipped therewith, and controller

To provide a vibrator, a vibration unit including the same, and a controller, the vibrator being configured to suppress cracks generated when a thin-film vibrating element is attached to an attachment surface including a curved surface, while maintaining desired vibration characteristics.SOLUTION: A vibrator 10 is attached to an enclosure including a curved surface and applies a voltage to apply predetermined vibration, the vibrator including a flexible substrate 12, a vibration application area A1, and thin-film vibrating elements 11a, 11b, 11c. The vibration application area A1 is provided on the flexible substrate 12, which is touched by a finger of a user. The thin-film vibrating elements 11a, 11b, 11c are arranged in the vibration application area A1 of the flexible substrate 12 and apply vibration when electric power is supplied.SELECTED DRAWING: Figure 2
Owner:OMRON CORP

Composite pressing process of high multilayer rigid-flex circuit board

The invention belongs to the technical field of circuit boards, and discloses a composite pressing process of a high multilayer rigid-flex circuit board, which comprises the following steps: performing microstructure processing on the surface of a rigid base material to form a three-dimensional reinforced interface, and performing chemical grafting modification treatment on a flexible base material to generate a multilayer pretreated substrate; identifying the positioning mark of each layer of substrate through an optical positioning system, establishing a lamination stress prediction model in combination with the thermodynamic parameters of the material, and outputting a lamination configuration scheme containing an interlayer matching relationship; placing the configured laminated structure in a multi-temperature-zone press, and executing a three-stage gradient heating and pressurizing program to realize interface fusion between adjacent layers of substrates; monitoring an interlayer deformation difference value of the substrate in real time through a sensing network, and eliminating the deformation difference to obtain a press-fit molded circuit substrate; through heterogeneous interface strengthening design, multi-physical field cooperative pressing and real-time deformation compensation, accurate interface fusion and low-warpage forming of the high-multilayer rigid-flex circuit board are realized.
Owner:SHEN ZHEN REN CHUANG YI ELECTRONIC CO LTD

Three-dimensional packaged double-sided heat dissipation power module

The invention relates to the technical field of packaging of power electronic devices, in particular to a three-dimensional packaged double-sided heat dissipation power module. The structure comprises an upper active metal brazing base material substrate and a lower active metal brazing base material substrate, a plurality of silicon carbide MOSFET chips, conductive strips and an inserter used for fixing the chips are arranged between the upper active metal brazing base material substrate and the lower active metal brazing base material substrate, the upper half-bridge chip is annularly arranged around a direct-current positive terminal, the lower half-bridge chip is annularly arranged around a direct-current negative terminal, and heat dissipation channels are formed in the upper surface and the lower surface of each chip. The impedance of branches is controlled to be equal, the current of each branch chip is balanced, the distance and layout of the chips are optimized, the overall loop area is reduced, the parasitic stray inductance of the module is reduced, in addition, the chips and the substrate are connected in a crimping mode, the chips and the copper columns are in contact through pressure to achieve electric heat conduction, the crimping materials are graphene sheets and molybdenum sheets, and the cost is low. Good contact between the chip and the copper columns is ensured, and contact resistance and thermal resistance are reduced. According to the invention, the effects of improving the heat dissipation efficiency, reducing parasitic stray inductance, balancing the current distribution of the parallel chips, and enhancing the module reliability and the conversion efficiency are achieved.
Owner:BEIJING TAILI CONTROL TECH CO LTD

3D printing layered honeycomb sandwich panel and processing method thereof

The invention discloses a 3D printing layered honeycomb sandwich panel and a processing method thereof. The processing method comprises the steps that a digital forming platform is constructed, process parameters are initialized, a functional interface layer is laid on a printing substrate in advance, a three-dimensional model is generated, and the printing substrate is divided into a plurality of gradient areas; collaborative printing of a lower panel structure is executed, and a composite panel base body is formed by adopting a multi-nozzle alternate deposition process; according to the characteristics of the divided gradient areas, honeycomb units are formed layer by layer by dynamically controlling printing rheological parameters, and a gradient honeycomb core layer is constructed; the cooperative growth of the upper panel and the gradient honeycomb core layer is realized by adopting a rotary incongruous printing strategy; the performance of the core layer material is regulated and controlled through a multi-stage heat treatment process, and the functional interface layer is activated to obtain the honeycomb sandwich panel; according to the honeycomb sandwich board, the mechanical property customized distribution of the honeycomb core layer is realized, the surface-core interface bonding strength is improved by combining the directional activation mechanism of the micro interlocking structure and the functional interface layer, and the honeycomb sandwich board with high mechanical property and thermal stability is provided.
Owner:FOSHAN SHANGCHENG SANDWICH PANEL CO LTD

Display substrate and method of manufacturing the same, display panel, and display apparatus

The present disclosure provides a display substrate and a method of manufacturing the same, a display panel, and a display apparatus. The display substrate includes a base substrate, pixel units are arranged in an array on the base substrate, each pixel unit includes an anode, a light-emitting functional layer and a cathode, a pixel definition layer is provided, and has a plurality of openings, and each opening exposes a portion of an anode; the light-emitting functional layer is located in the opening; at least a portion of two opposite ends of the anode along a first direction is warped in a direction toward the cathode, an orthographic projection of the warped portion of the anode on the base substrate does not overlap with that of the cathode on the base substrate, and a hollow region is provided at a position of the cathode at least corresponding to the warped portion.
Owner:BEIJING BOE TECH DEV CO LTD +1

Display panel, manufacturing method thereof and display device

PendingCN119654009ARealize dynamic anti-peepingreduce viewing angleDisplay deviceMechanical engineering
The invention relates to a display panel, a manufacturing method thereof and a display device. The display panel comprises a substrate, peep-proof pixel units, display pixel units and a first shading structure. Each peep-proof pixel unit comprises a peep-proof sub-pixel arranged on one side of the substrate; the peep-proof pixel units are configured to be displayed in a first state; the display pixel unit comprises display sub-pixels arranged on one side of the substrate; the orthographic projection of the display sub-pixel on the substrate is arranged around at least part of the outer contour of the orthographic projection of the corresponding peep-proof sub-pixel on the substrate; the display pixel unit is configured to display in a second state; the first shading structure is arranged on one side of the substrate, and the orthographic projection of the first shading structure on the substrate is located between the orthographic projection of the display sub-pixel on the substrate and the orthographic projection of the peep-proof sub-pixel on the substrate; the orthographic projection of the first shading structure on the substrate is arranged around at least part of the outer contour of the orthographic projection of the peep-proof sub-pixel on the substrate; therefore, the dynamic peep-proof effect of the display panel can be realized, and the display effect and the peep-proof effect of the display panel are improved.
Owner:YUNGU GUAN TECH CO LTD +1

Low-dielectric-loss multilayer ceramic substrate and preparation method thereof

The invention relates to the technical field of ceramic substrates, and provides a low-dielectric-loss multilayer ceramic substrate and a preparation method thereof. The low-dielectric-loss multilayer ceramic substrate is prepared from, by weight, 90-100 parts of aluminum oxide, 1-3 parts of plasticizer, 3-5 parts of sintering aid, 6-10 parts of binder, 1-3 parts of dispersing agent and 50-60 parts of water, the aluminum oxide is composed of first aluminum oxide and second aluminum oxide, and the first aluminum oxide and the second aluminum oxide are different in form. According to the technical scheme, the problem of high dielectric loss of the multilayer ceramic substrate in the prior art is solved.
Owner:HEBEI DINGCI ELECTRONIC TECH CO LTD

Optical and electrical glass interposer with embedded bridge

Semiconductor devices and systems with optical and electrical interposers, and methods of forming the same, are disclosed herein. In one example, a semiconductor device includes a glass substrate and a bridge die embedded in the glass substrate, where the glass substrate includes one or more optical waveguides and the bridge die includes an interconnect to electrically couple multiple integrated circuit dies.
Owner:INTEL CORP

Semiconductor package

A semiconductor package includes a first package substrate having a lower surface and an upper surface respectively including a plurality of first lower surface pads and a plurality of first upper surface pads, a second package substrate having a lower surface and an upper surface respectively including a plurality of second lower surface pads and a plurality of second upper surface pads, wherein the plurality of second upper surface pads comprise all of the upper surface pads at the upper surface of the second package substrate, a semiconductor chip provided between the first package substrate and the second package substrate and attached onto the first package substrate, and a plurality of metal core structures connecting some of the plurality of first upper surface pads to some of the plurality of second lower surface pads and not vertically overlapping any of the plurality of second upper surface pads, each metal core structure having a metal core.
Owner:SAMSUNG ELECTRONICS CO LTD

MEMS device architecture and preparation method

The invention discloses an MEMS device architecture, which comprises a cap layer, a device layer and a substrate layer, the cap layer is bonded with the device layer, the bonded whole is bonded with the substrate layer, the cap layer is manufactured based on a first silicon substrate, the bottom of the cap layer is provided with a cavity structure, and the cap layer is internally provided with a high-deep groove structure. A silicon dioxide film is arranged on the groove wall of the high-deep groove structure, polycrystalline silicon is deposited and filled in the high-deep groove structure, and a silicon dioxide layer is arranged on the upper surface of the first silicon substrate; the device layer is manufactured based on an SOI wafer and comprises a first silicon structure layer composed of top layer silicon, a buried oxide layer and a second silicon structure layer composed of back substrate silicon. The substrate layer comprises a second silicon substrate, a bottom layer cavity is formed in the top face of the second silicon substrate, and exhaust holes are formed in the bottom face of the second silicon substrate. According to the method, deep groove etching, polycrystalline silicon groove filling and bonding technologies are combined, advanced materials such as the SOI wafer and the polyimide layer are utilized, and excellent signal isolation and flexibility of various MEMS IMU applications are achieved.
Owner:BEWIS TECH

HTCC ceramic defect automatic identification method based on industrial model assistance

The invention relates to the technical field of intelligent manufacturing, in particular to an HTCC ceramic defect automatic identification method based on industrial model assistance, which comprises the following steps: step 1, collecting sintering temperature gradient, lamination pressure and green body water content process parameters in the HTCC production process in real time; step 2, performing non-contact dielectric property scanning on the sintered HTCC substrate on a production line conveyor belt; 3, based on the coordinates of the dielectric abnormal region, controlling an annular polarization light source to inhibit the incident angle reflected by the metallization layer from irradiating the target region; 4, inputting the dielectric anomaly frequency band feature vector and the defect image texture feature in the step 3 into a cross-modal attention network to generate a fusion feature map; and 5, establishing an association mapping library of the defect type and the process deviation type. Through accurate real-time monitoring, intelligent defect identification and classification, automatic process adjustment and a continuously optimized feedback mechanism, the efficiency, quality and intelligent level of the ceramic production process are greatly improved.
Owner:SHENZHEN HEILS ZHONGCHENG TECH CO LTD

Process tool for dry removal of photoresist

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.
Owner:LAM RES CORP

Display panel, display equipment and manufacturing method of display panel

The invention provides a display panel, a display device and a manufacturing method of the display panel, the display panel comprises a substrate, a pixel defining layer, an isolation structure and a pixel unit, the pixel defining layer is arranged on the substrate, and the pixel defining layer is provided with a pixel opening; the isolation structure is arranged on the side, away from the substrate, of the pixel defining layer, an isolation opening is defined by the isolation structure, the orthographic projection of the pixel opening on the substrate falls into the orthographic projection range of the isolation opening on the substrate, and the isolation structure comprises a first structure layer, a second structure layer and a third structure layer which are sequentially stacked in the direction away from the substrate; the orthographic projection of the second structural layer on the substrate falls into the orthographic projection range of the first structural layer on the substrate, and the etching resistance of the first structural layer is higher than that of the second structural layer; each pixel unit comprises a first electrode, the first electrodes are at least arranged in the pixel openings and the isolation openings, and the first electrodes are at least in lap joint with the first structure layer.
Owner:HEFEI VISIONOX TECH CO LTD +1