34964 results about "Si substrate" patented technology

The invention relates to a glass support plate, a preparation method thereof and a packaging structure. The glass carrier plate is used for connecting a chip and a circuit board, the glass carrier plate comprises a substrate, the substrate comprises a through hole penetrating through the substrate along a first direction, the through hole comprises a first sub-through-hole part and a second sub-through-hole part at least located at two ends of the through hole, and a third sub-through-hole part located between the first sub-through-hole part and the second sub-through-hole part, the first direction is perpendicular to the plane where the substrate is located; the middle conductive part is filled in the third sub through hole part; the first seed layer at least partially covers the side wall of the first sub through hole part; the second seed layer at least partially covers the side wall of the second sub through hole part; the first conductive part is filled in the first sub through hole part, and at least part of the first seed layer is located between the side wall of the first sub through hole part and the first conductive part; and the second conductive part is filled in the second sub through hole part, and the second seed layer is at least partially located between the side wall of the second sub through hole part and the second conductive part. The conductive performance and the reliability can be improved at the same time.

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

The invention discloses atomic layer etching adopting single process gas and rapidly adjusting chamber pressure. The process includes a step time designed for optimizing the surface modification and sputtering process, thereby minimizing undesirable effects. The customized waveform generator enables rapid and accurate control of the substrate bias, thereby shortening the ALE cycle time. Besides, by presetting set values for the MFC and the vacuum valve, rapid adjustment of the pressure of the cavity is achieved, traditional PID control is not needed, and therefore the efficiency and precision in semiconductor manufacturing are further improved.

The present disclosure provides an automated die bonding of LED substrates system in which an automated die bonding inspection module is used to determine the quality of incoming processing material and an automated die bonding process module is used to process the processing material, an automated die bonding post-process module is used to inspect the resultant process material for acceptability, and an automated die bonding historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated die bonding process module and an automated die bonding integration module to update the automated die bonding process module based upon the results of the automated die bonding historical module.

The invention relates to the field of packaging substrates, in particular to a heterogeneous stack-up packaging substrate and a manufacturing method thereof. A glass core plate is arranged in the packaging substrate, and one or more first core plates are arranged between the surface of the packaging substrate and the glass core plate; one or more circuit layers are arranged between the glass core plate and the first core plate; one or more circuit layers are arranged between the first core boards; one or more circuit layers are arranged between the first core board and the surface of the substrate; the packaging substrate is internally provided with a metal column, and the metal column is connected with the circuit layer. Different dielectric materials and different core plates are matched in the manufacturing process of the packaging substrate, so that the problem of warping of the dielectric materials caused by expansion and shrinkage and stress or temperature change in the stacking process can be effectively solved, and the flatness of the large-size substrate in the machining process is effectively ensured. The technology of an upper-layer thin circuit and a lower-layer thick circuit is realized. And the manufacturing feasibility of the large-size packaging substrate is greatly improved.

The utility model discloses a display device, a backlight module of the display device comprises a substrate and a plurality of light emitting units, the plurality of light emitting units are arranged on the substrate at intervals, at least one light emitting unit comprises a plurality of chips and colloid, the plurality of chips are arranged at intervals, at least two chips emit light rays with different wavelengths, and the colloid covers the plurality of chips. The colloid comprises an optical adhesive layer and light diffusion particles, the light diffusion particles are arranged in the optical adhesive layer, and the light diffusion particles are configured to refract or reflect light emitted by the plurality of chips. The optical adhesive layer is provided with a first surface and a second surface, the first surface is arranged on the substrate, the second surface is a light emitting surface of the optical adhesive layer and is a curved surface, and the diameter of one end, close to the substrate, of the adhesive is larger than that of the other end, away from the substrate, of the adhesive in the thickness direction of the display device. The maximum height h of the colloid and the maximum diameter d of the colloid in the direction parallel to the length direction of the substrate meet the following relation: d = 0.7 h-1. 3 h. According to the display device, the light emitting uniformity of the light emitting unit can be improved.

The invention relates to the technical field of decorative materials, in particular to a decorative material with a 3D texture structure and a preparation method and application of the decorative material. The method comprises the following steps: carrying out digital printing on a pretreated substrate to obtain a 2D pattern layer on the surface of the substrate; coating the surface of the 2D pattern layer with a photocuring coating, carrying out preliminary curing, and then carrying out ink-jet printing of a texture developing solution on the surface subjected to preliminary curing to carry out secondary curing, so as to obtain a cured coating; the cured coating comprises a hardened part and an unhardened part; and after an unhardened part in the cured coating is removed through polishing and wire drawing, a surface coating is coated, and the decorative material with the 3D texture structure is obtained. The textures with different widths and depths can be obtained in a manner of combining primary curing of the coating with ultraviolet absorption of the developing solution, and then a microcosmic coarse and visual smooth form is obtained through polishing and wire drawing treatment, so that the obtained 3D texture structure is closer to natural textures.

The invention relates to a reconfigurable dual-mode leaky-wave antenna with global scanning capability and a reconfiguration method, the leaky-wave antenna comprises a double-layer slow-wave waveguide structure formed by an upper metal conductor and a lower metal conductor, and the upper metal conductor and the lower metal conductor are separated by a dielectric substrate; the double-layer slow-wave waveguide structure comprises a plurality of periodic units, and a plurality of T-shaped structures with opposite directions are processed on upper and lower layers of metal conductors of each periodic unit to form a plurality of grooves; a variable capacitance diode is embedded into the tail end of a slot arm of the upper-layer metal conductor and is electrically connected with the lower-layer metal conductor through a metal via hole, and a closed loop is formed between the upper-layer metal conductor and the lower-layer metal conductor; a plurality of elliptical radiation patches are arranged at the top of a slot arm of the lower metal conductor at intervals and used for radiation leakage of the slow wave waveguide, and continuous frequency scanning covering 180 degrees is achieved; according to the invention, two modes of frequency scanning and fixed-frequency scanning are fused, 180-degree global scanning can be realized in any frequency reconfigurable interval, and beams can be flexibly reconstructed through multiple control strategies under a fixed-frequency condition.

The embodiment of the invention provides a chip carrier plate and a manufacturing method thereof, a chip packaging structure, and a manufacturing method of the chip carrier plate, and the method comprises the steps: forming a first protection layer on a first surface of a glass substrate, forming a plurality of first through holes in the first protection layer, carrying out the laser induction of the glass substrate through the first through holes, and forming a plurality of induction regions, and in the induction area, etching the glass substrate to form a plurality of second through holes penetrating through the glass substrate, and forming conductive connection parts in the second through holes. The first protection layer with the first through hole is manufactured on one side of the glass substrate, the first protection layer exposes the area, needing laser induction, on the glass substrate, the area, not needing laser induction, on the glass substrate is protected, and it is avoided that when the glass substrate is etched subsequently, etching damage is caused to other positions of the surface of the glass substrate. Therefore, the thickness of the glass substrate can be ensured, and the surface quality such as roughness of the surface of the glass substrate can be ensured.

The invention relates to the technical field of lasers, in particular to a laser heat management device and a control method thereof, the laser heat management device comprises a cooling substrate, the cooling substrate is internally provided with a micro-channel, the micro-channel comprises a main channel and a branch channel, and the main channel is used for circulating cooling water; the cooling substrate is provided with a detection control area, the detection control area is located at the joint of the branch channel and the main channel, the detection control area is provided with a phase change micro-valve and a detection assembly, the detection assembly is used for collecting temperature data, the phase change micro-valve comprises a phase change material and a flexible separation blade, and after the valve is opened, the phase change material generating phase change pushes the flexible separation blade, and the phase change micro-valve is connected with the detection assembly. The communication state of the main channel and the branch channel is controlled; the main controller is used for receiving the temperature data of all the detection control areas and controlling the valves of the corresponding detection control areas to be opened or closed according to the deviation between the temperature data and the target temperature. The temperature gradient of the laser can be reduced at least so as to ensure that the laser realizes a long-term stable working state.

The invention provides a packaging structure and a packaging method. The package structure includes a substrate, a wafer disposed on the substrate and having a backside surface remote from the substrate, a heat sink disposed over the substrate and having a surface facing the backside surface, and a thermal interface material disposed between the wafer and the heat sink, wherein there is no organic adhesive between the wafer and the heat sink.

A substrate support assembly includes a cooling plate and a chuck disposed on the cooling plate. The chuck includes one or more heating electrodes, and one or more clamp electrodes to electrostatically secure the chuck to the cooling plate. Another substrate support assembly includes a cooling plate, a first puck plate bonded to the cooling plate, and a second puck plate disposed on the first puck plate. The second puck plate includes one or more clamp electrodes to electrostatically secure the second puck plate to the first puck plate.

The invention discloses a high-temperature-resistant, bending-resistant and high-flexibility polyimide film for flexible display and a preparation method of the high-temperature-resistant, bending-resistant and high-flexibility polyimide film. According to the polyimide film, by introducing the nano silicon dioxide particles and constructing the porous structure design, the problems that a traditional polyimide film is insufficient in stability in a high-temperature environment, cracks are likely to be generated after bending, and the flexibility is poor are effectively solved. The polyimide film disclosed by the invention is prepared by adopting a diamine monomer and a dianhydride monomer as main raw materials, adding nano silicon dioxide particles, and carrying out solution polymerization, gelation, pore regulation and control and thermal imidization processes. The obtained polyimide film has a micron-sized porous structure, keeps stable at a high temperature of 400 DEG C, does not generate cracks after being bent for 100,000 times, has tensile strength of more than or equal to 150MPa, elongation at break of more than or equal to 25% and light transmittance of more than or equal to 85%, and is suitable for a substrate material of a flexible display device.

The invention belongs to the technical field of cable processing, and relates to a preparation method and application of a flexible superconducting coaxial cable outer conductor. The preparation method comprises the following steps: mixing Nb powder and Ti powder by adopting a vibrating ball mill to prepare NbTi composite powder; a substrate of laser powder bed melting equipment is preheated, the NbTi composite powder is spread on the substrate of the laser powder bed melting equipment, a melting powder layer is scanned through the laser powder bed melting technology, a three-dimensional communicated grid structure is formed through interlayer staggered scanning, finally, the NbTi net-shaped alloy pipe is placed in a strong acid solution to be soaked for a short time, redundant metal powder is removed, and the NbTi net-shaped alloy pipe is obtained. And finally, the preparation of the flexible superconducting coaxial cable outer conductor for the quantum computer is realized.

The invention belongs to the technical field of semiconductor material processing equipment, and particularly relates to a bonding system, which comprises a film forming chamber used for preparing a film with active point locations on the surface of an original substrate to form an active substrate; the bonding chamber comprises a first carrier and a second carrier, and the first carrier and the second carrier are respectively used for keeping the active substrates and enabling the two kept active substrates to be opposite to each other; at least one of the first carrier and the second carrier is provided with a force output part, and the force output part is used for outputting force for crimping the active substrate held by the first carrier and the second carrier; and the transmission chamber comprises a substrate taking and placing module which is used for taking and placing the substrates on different stations. According to the bonding system provided by the invention, a very thin active film layer can be prepared on the to-be-bonded surface of the substrate to form the active substrate, bonding can be directly carried out at room temperature, the stress problem caused by mismatching of thermal expansion coefficients of heterogeneous materials can be solved, and the product quality of a bonding sheet is improved.

The invention relates to the field of packaging substrates, in particular to a modular stacked substrate and a manufacturing method thereof. Comprising a first sub-packaging substrate and a second sub-packaging substrate; the first sub-packaging substrate and the second sub-packaging substrate are connected through a solder ball, and filling glue is arranged between the first sub-packaging substrate and the second sub-packaging substrate; the first sub-packaging substrate comprises a glass core plate, a circuit layer is arranged between the glass core plate and the surface of the first sub-packaging substrate, and the circuit layer is connected through a first metal column; the first sub-packaging substrate comprises a second metal column, the second metal column penetrates through the glass core plate to be connected with the circuit layer, and printing ink is injected into the second metal column. The yield of large-size substrates can be remarkably improved, and meanwhile the manufacturing cost is reduced. The shrinkage phenomenon caused by the state change after the material is pressed, heated and cooled in the pressing process is avoided, and the overall warping is avoided. The method can be applied to packaging of 2.5 D chips, and the technological level of large-size chips is greatly improved.

The invention discloses a treatment method for helium holes of an electrostatic chuck, and belongs to the technical field of electrostatic chucks, and the treatment method comprises the following steps: S1, pretreating a gas passage opening and the surface of a substrate: cleaning the helium holes and fine cracks of the substrate, and roughening the surface of the substrate; s2, a ceramic piece is glued to the helium hole opening, wherein the ceramic piece and the side wall of the helium hole opening are tightly attached and bonded together through an adhesive; s3, filling the helium hole ceramic piece with insulating glue: filling holes, cracks and other fine interfaces; s4, grinding the insulation paste filling part to be flush with the surface of the substrate so as to keep the overall flatness; s5, performing meltallizing on the surface of the substrate by using a meltallizing process to obtain the meltallizing coating, uniformly covering the insulating glue filling layer with the meltallizing coating, and forming good combination with the substrate; and S6, grinding and polishing: after the meltallizing coating is completed, grinding or polishing the meltallizing coating to ensure that the surface of the meltallizing coating is smooth.

The invention relates to the technical field of printed circuit boards, and discloses a circuit board structure and a preparation method thereof, and the circuit board structure comprises a copper seat, the top of which is provided with a first groove; a chip, wherein the chip is arranged in the first groove; the ceramic substrate layer is arranged at the bottom of the copper seat, and the shape of the cross section of the ceramic substrate layer is the same as that of the bottom surface of the copper seat; the copper plate layer is arranged at the bottom of the ceramic substrate layer, and the shape of the cross section of the copper plate layer is the same as that of the cross section of the ceramic substrate layer. The ceramic substrate layer and the copper plate layer are sequentially arranged at the bottom of the copper base, the thermal resistance of the chip during working can be remarkably reduced, the overall heat dissipation performance can be improved, the cross sections of the ceramic substrate layer and the copper plate layer are consistent with the bottom surfaces of the copper base and the copper plate layer in shape, and the layers are high in structural fitting degree, uniform in stress distribution and good in plate thickness consistency after lamination; and the warping problem of the copper seat caused by thermal expansion is effectively reduced.

A light detection apparatus according to an embodiment of the present disclosure includes a semiconductor substrate, a light receiver, a trench, a multiplier that is a first electrically-conductive type, and a contactor. The semiconductor substrate has a first surface and a second surface facing each other, and has a pixel array in which a plurality of pixels is disposed into an array shape in an in-plane direction. The light receiver is provided inside the semiconductor substrate for each of the pixels, and generates, through photoelectric conversion, carriers in accordance with an amount of light received. The trench is provided, for each of the pixels, to the first surface of the semiconductor substrate. The multiplier that is the first electrically-conductive type is provided to a bottom surface of the trench, and allows the carriers generated in the light receiver to undergo avalanche multiplication. The contactor includes an electrically-conductive material buried in the trench, and is in contact with the multiplier.

The embodiment of the invention provides a preparation method of a carrier plate structure, the carrier plate structure and a mobile terminal, the carrier plate structure is used for connecting an integrated circuit and a printed circuit board, in the embodiment of the application, a first wiring layer is prepared on a first temporary substrate, and then a substrate is prepared on the first wiring layer, so that the preparation difficulty of the first wiring layer can be reduced, and the production efficiency is improved. And the possibility that the substrate is damaged in the preparation process of the first wiring layer is reduced. Meanwhile, the softer first wiring layer is prepared firstly, the second temporary substrate and the first wiring layer can carry out bottom wrapping on the substrate, stress borne by the substrate in the preparation process of the substrate and the second wiring layer can be reduced, the possibility that the substrate is damaged and cracked is further reduced, and therefore the preparation yield of the carrier plate structure is increased.

The glass substrate cassette with the supporting cantilever provided with the permanent magnet vibration reduction piece comprises an upper frame and a lower frame which have corresponding transverse width and depth, and a plurality of left and right outer frame columns and rear frame columns which are supported between the upper frame and the lower frame to form a containing space; the left outer frame column and the right outer frame column respectively extend towards the containing space to be provided with a plurality of short supporting rods, the rear frame column is respectively provided with a plurality of supporting cantilevers in an extending mode, the supporting cantilevers are respectively provided with a fixed end and a free end, the free end is provided with a permanent magnet vibration reduction piece, and the permanent magnet vibration reduction piece is respectively provided with an upper magnetic pole and a lower magnetic pole. And the other permanent magnet vibration reduction piece is opposite to the free end of the vertically adjacent supporting cantilevers, so that when the free end deviates from a balance position to start vibration, the permanent magnet vibration reduction pieces can be synchronously driven, combined magnetic restoring force facing the balance position is obtained from the adjacent permanent magnet vibration reduction pieces on the upper side and the lower side, and the permanent magnet vibration reduction pieces return to the balance position more quickly.

The invention provides an embedded substrate and a manufacturing method thereof. The manufacturing method specifically comprises the following steps: forming a conduction copper column and a shielding copper column on a first circuit layer of the substrate; pressing a second dielectric layer on the first circuit layer, the conduction copper column and the shielding copper column; mounting a component on the second dielectric layer; pressing the component into the second dielectric layer to enable the shielding copper column and the first circuit layer to surround the component; pressing a fourth dielectric layer on the second dielectric layer and the component, and curing the second dielectric layer and the fourth dielectric layer; forming an outer circuit layer on the fourth dielectric layer; and the outer circuit layer is in conducting connection with the conducting copper column, the shielding copper column and the terminal of the component. The shielding copper columns can reduce the deviation of the component in the extrusion process of the component and improve the yield, five surfaces of the embedded component are all provided with metal copper, and a good electromagnetic shielding effect can be achieved. Moreover, the second dielectric layer and the fourth dielectric layer are made of high-thermal-conductivity materials, so that heat can be quickly guided into the shielding copper columns, and the heat dissipation effect is obviously improved.

Methods for fabricating branched substrates having conductive contact pads and hybrid dielectric bonding surfaces for directly bonding dies and electrically connecting them to the contact pads. A branched substrate can include a main portion and one or more branch portions hybrid bonded to the main portion. Some sections of the branched substrate can be flexible to allow deformable electrical connection between components that are hybrid bonded to different regions of the branched substrate. A flexible branch portion may provide electrical connection between vertically separated layers of two components. The method includes directly bonding a branch portion of the branched substrate to the main portion of the branched substrate via a hybrid bonding interface comprising a conductive interface between contact pads of the main and branch portions and a hybrid bonded dielectric interface between dielectric surfaces of the of the main and branch portions.

The invention discloses a silicon carbide power module packaging structure with low thermal resistance and low stress, and belongs to the technical field of semiconductor devices. The packaging structure comprises a metal substrate; the insulating ceramic layer is arranged on the metal substrate; the circuit layer is arranged on the insulating ceramic layer; the lower surface of the silicon carbide chip is connected with the circuit layer through a first interface layer; the composite heat dissipation stress buffer layer is arranged on the upper surface of the silicon carbide chip through a second interface layer; the copper clamp is connected with the upper surface of the composite heat dissipation stress buffer layer through a third interface layer; and the composite heat dissipation stress buffer layer is made of a copper-graphite composite material. According to the invention, the junction temperature of the silicon carbide chip can be greatly reduced, the overall thermal resistance is reduced, the surface stress of the chip is reduced, the warping phenomenon of the chip in the working process is effectively improved, and the long-life reliability of the power module under the long-term thermal cycle working condition is ensured.

A substrate support assembly includes a cooling plate. The substrate support assembly further includes a chuck disposed on the cooling plate. The chuck includes one or more clamp electrodes to electrostatically secure the chuck to the cooling plate. The substrate support assembly further includes multiple mesas formed on a bottom surface of the chuck or formed on a top surface of the cooling plate to separate the chuck from the cooling plate.

In the case of forming a fine resist pattern, it is desired to further reduce the roughness of the resist pattern.SOLUTION: A substrate processing apparatus comprising: a heat treatment unit configured to bake a resist film; an exposure unit configured to irradiate the resist film having a portion irradiated with a first radioactive ray with a second radioactive ray; a development unit configured to form a resist pattern by development for removing a part of the resist film; and a control unit configured to control the exposure unit such that the second radioactive ray is collectively irradiated to an entire region of the resist film including the portion irradiated with the first radioactive ray and a portion other than the portion irradiated with the first radioactive ray. The first radiation is ionizing radiation or non-ionizing radiation, and the second radiation is non-ionizing radiation. When the first radiation is non-ionizing radiation, the second radiation is non-ionizing radiation having a wavelength longer than the wavelength of the first radiation. The resist film includes a metal oxide photoresist material.SELECTED DRAWING: Figure 1

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention discloses multi-solvent synergistically activated low-temperature semi-sintered copper paste and a preparation method and application thereof, and belongs to the technical field of conductive paste. The multi-solvent synergistically activated low-temperature semi-sintered copper slurry comprises the following raw material components in percentage by mass: 82-88% of conductive filler, 2-3% of a resin carrier, 4-7% of an activating solvent, 4-7% of a dispersing solvent and 2-3% of a curing agent. Through cooperation of multiple solvents, full-stage activation of the copper particles is achieved, pre-connection and sintering of the copper particles before resin is completely crosslinked and cured are promoted, densification of the overall structure is improved, the insulation barrier effect of the resin is effectively avoided, the resistivity is reduced, meanwhile, inhibition of the resin on sintering of the copper particles is solved, and the service life of the copper particles is prolonged. And good balance between conductivity and interface adhesion is realized. Through resin curing, chemical bonding between the slurry and the substrate can be enhanced, a metal bond network among copper particles is expanded, and mechanical connection stability and electrical performance are guaranteed.