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2265 results about "Flash-lamp" patented technology

The electric flash-lamp uses electric current to start flash powder burning, to provide a brief sudden burst of bright light. It was principally used for flash photography in the early 20th century but had other uses as well. Previously, photographers' flash powder, introduced in 1887 by Adolf Miethe and Johannes Gaedicke, had to be ignited manually, exposing the user to greater risk.

Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.
Owner:SONY CORP

Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device

An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (7), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (1), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film (7) on the substrate (1), a method comprises forming a low-crystallization semiconductor thin-film (7A) on the substrate (1), and subsequently heating and cooling this low-crystallization semiconductor thin-film (7A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film (7) is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.
Owner:SONY CORP

Control of a flash unit in a digital camera

The invention is based on a method for controlling a flashlight in connection with a digital image sensor without a mechanical shutter, wherein the exposure of the image sensor is performed in sub-areas, such as pixel rows or columns, or in another order, by using a rolling electronic shutter or the like. Thus, the exposure of said sub-areas of the image sensor takes place at least partly at different times. According to the invention, during the time of exposure of one image, i.e. substantially all the sub-areas of the image sensor, several discrete, successive flashes of the flashlight are used to achieve even exposure of the image area, which the flashes are timed in such a way that each single flash is triggered at a point of time which is common to the integration or exposure time of as many successive sub-areas of the image sensor as possible. According to the invention, the successive light flashes are also timed in such a way that one and only one flash of the flashlight occurs during the integration or exposure time of each single sub-area. By the present invention, the significant advantage is attained that the invention minimizes the number of light flashes required for one image while it also secures that each sub-area of the sensor to be exposed at a different time is illuminated as evenly as possible.
Owner:NOKIA TECHNOLOGLES OY
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