348 results about "Semiconductor thin films" patented technology

The invention discloses a semiconductor film performance cooperative control method and system based on multi-parameter coupling, and belongs to the technical field of semiconductor material manufacturing, and the method specifically comprises the steps: determining a control parameter set containing plasma power density and other parameters, and building a multi-parameter coupling response model; generating sample points by using Latin hypercube sampling, quantifying a parameter interaction effect, and forming a dynamic weight matrix in combination with a graph model; monitoring data such as plasma emission spectrum intensity ratio in real time, comparing the data with a model predicted value, and correcting the model; a multi-objective optimization problem is constructed based on the correction model and the dynamic weight matrix, and optimal parameter configuration is solved by using a conjugate gradient method; alternately applying a high-frequency pulse and a relaxation stage according to the optimal configuration, and modulating the pulse frequency according to a Fibonacci sequence; and finally, based on the substrate temperature, planning a temperature rise path by using an S-shaped curve, superimposing cosine modulation, and introducing oscillation compensation gas to compensate the reactant concentration deviation, thereby realizing accurate optimization of the material preparation process.

The invention discloses a substrate pre-cleaning method based on PECVD (Plasma Enhanced Chemical Vapor Deposition), and belongs to the technical field of semiconductor film deposition. The method mainly comprises the steps that a substrate to be deposited is placed on a heater in a deposition cavity, and the vacuum degree in the closed deposition cavity is adjusted to a first preset value; argon is introduced into the deposition cavity at a preset flow rate, and the vacuum degree in the deposition cavity is adjusted to a second preset value; forming a radio-frequency electric field in the deposition cavity by using a high-frequency radio-frequency power supply, and ionizing argon gas by using the radio-frequency electric field to form argon ions; and the surface of the to-be-deposited substrate is bombarded through argon ions until impurities on the surface of the to-be-deposited substrate are removed, and the vacuum degree in the deposition cavity is adjusted back to a first preset value after the impurities are removed. The physical bombardment characteristic of argon plasma is utilized to achieve efficient removal of surface pollutants of the to-be-deposited substrate, and meanwhile seamless connection of pretreatment and the deposition process is guaranteed through cooperative control of all systems of equipment.

The invention discloses a flexible gas flow velocity sensor based on ionic conductive gel, and a preparation method and application thereof. The flexible gas flow velocity sensor specifically comprises a semiconductor active layer and a pore-forming agent which are blended, performing spin coating and etching on the interdigital electrode substrate to prepare a semiconductor film with a porous structure; blending an ionic gel precursor solution; and spin-coating or drop-casting the precursor solution, and preparing the gel film with the ionic conduction characteristic through photo-crosslinking. The sensor provided by the invention can realize sensing response to different inert gases and different gas flow rates under low power consumption, and realizes detection application to human respiration through the Bluetooth test module. Air flow is introduced to regulate and control ion mobility, and the sensing performance of the device is improved by means of the porous organic semiconductor film. The flexible sensor can be attached to other objects or the surface of the inner wall of an airflow pipeline, the device is simple in structure and easy to miniaturize, and a millimeter-level micro sensor can be achieved. And the method is suitable for batch preparation of low-power-consumption miniaturized devices.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

The invention discloses a photosensitive pixel unit and an image sensor. The photosensitive pixel unit comprises a semiconductor substrate; a charge accumulation electrode, a transmission control electrode, and a signal readout electrode; the dielectric layer covers the charge accumulation electrode, the transmission control electrode and the signal reading electrode and is provided with an opening part; the N-type semiconductor layer is positioned above the dielectric layer, is in ohmic contact with the signal reading electrode through the opening part, and sequentially comprises a nanocrystalline particle layer, a metal oxide semiconductor thin film layer and an interface layer which is arranged between the nanocrystalline particle layer and the metal oxide semiconductor thin film layer and has two-dimensional electron gas characteristics from bottom to top; the photoelectric conversion layer is located above the N-type semiconductor layer; and the top electrode is positioned above the photoelectric conversion layer and is arranged opposite to the charge accumulation electrode, the transmission control electrode and the signal reading electrode.

The invention provides a polarization sensor temperature drift calibration and real-time compensation method based on a semiconductor film, and belongs to the field of bionic polarization navigation. The method comprises the following steps: firstly, establishing a mapping relation between voltage response of each channel of a sensor and temperature variation, a temperature compensation coefficient, and parameters such as polarization degree, polarization angle and light intensity of incident light to obtain an actual output equation of the sensor; then, temperature compensation coefficients of all channels of the sensor are obtained through data fitting; secondly, selecting a reference temperature, obtaining sensor output under an indoor standard light source, performing normalization processing, and performing calibration to obtain three parameters including a proportionality coefficient, a polarization degree coefficient and a polarizer polarization analysis angle of each channel; and finally, solving an actual output equation of the sensor to realize temperature drift real-time compensation. The sensor output model is further improved based on the temperature characteristic of the semiconductor film material, the angle measurement error of the polarization sensor made of a semiconductor is effectively reduced, and the navigation accuracy is improved.

A kind of pentacene field effect transistor of improving anti-fatigue characteristic, n-type semiconductor layer and charge trapping layer with shallow energy level trap are arranged in pentacene field effect transistor structure;Device has bottom gate type structure: gate electrode / gate insulating layer / n-type semiconductor film / charge trapping dielectric layer with shallow energy level trap / tunneling layer / pentacene / source (drain) electrode;Gate electrode is conductor, resistivity is between 0.1-0.001 Ω·cm;Gate insulating layer dielectric film is insulator, thickness range is 5-150nm;The thickness of n-type semiconductor film layer is 1-200nm;Charge trapping dielectric layer with shallow energy level hole trap, thickness is 1-100nm;Tunneling layer is insulator, thickness range is 1-20nm;Pentacene thickness range is 1-100nm;Source-drain electrode is conductor, thickness range is 50-200nm;Gate electrode is conductor.

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

The invention discloses a cleaning end point judgment method and a cleaning end point detection system for a thin film growth equipment chamber, and the cleaning end point judgment method comprises the following steps: obtaining the peak concentration C of characteristic gas and the time T when the characteristic gas reaches a peak value; calibrating formal cleaning parameters according to the characteristic gas peak concentration C and the time T; formal cleaning is carried out on the process chamber according to the calibrated parameters; characteristic gas generated by formal cleaning is monitored, and a signal quality factor Q is obtained; setting a standard value G; and comparing the signal quality factor Q with a standard value G, and judging a cleaning result. The cleaning end point detection system comprises a semiconductor film growth equipment process chamber, a tail gas emission pipeline and a detection device, the detection device is arranged on the tail gas emission pipeline to detect the concentration of the characteristic gas in real time. The problems that an existing cleaning method cannot quantify the pollution load before cleaning, and the self-adaptive anti-interference capability is lacked in the cleaning process can be solved.

The invention relates to a gas concentration detection device for detecting binary gas concentration. The gas concentration detection device comprises a detection module, a sealing sleeve module and a controller module, the detection module comprises a detection cavity, a forming cavity integrally formed with the detection cavity, and a transducer sealed in the forming cavity by using a sealant. The sealing sleeve module has a sleeve container shape matching the shape of the detection module to accommodate and seal the detection chamber of the detection module, and includes an air inlet and an air outlet in fluid communication with the detection chamber. The controller module comprises an electric appliance module with a communication board, a power board and a main control board, a display module with a display screen and a driving board. The detection module, the sealing sleeve module and the controller module are modular assemblies, and the detection module and the sealing sleeve module as well as the detection module and the controller module are matched with each other and are detachably connected with each other. The gas concentration detection device for detecting the binary gas concentration is suitable for gas concentration detection of a gas supply system of a semiconductor thin film process.

The invention discloses an online thickness measurement system for semiconductor film deposition, and relates to the technical field of thickness measurement devices. The device comprises a main body structure which comprises a bottom plate, an adjusting plate located above the bottom plate and a supporting plate located above the adjusting plate; an automatic detection structure, comprising a stroke frame on the outer side of a supporting plate, a first motor located on one side of the upper end of a bottom plate, a first screw located at the output end of the first motor, a first nut, a second motor located at one end of the stroke frame and a second screw located at the output end of the second motor and rotationally installed in the stroke frame, wherein the first nut is connected to the outer wall of the first screw in a threaded and sleeving mode; the outer wall of the second screw is sleeved with the second nut in a threaded mode, and the stroke frame is located at the lower end of the second nut. By arranging the negative pressure adsorption fixing structure, the multi-dimensional mobile automatic detection mechanism and the adjustable clamping plate, the problems of low precision and poor efficiency of manual detection of the deposition thickness of the semiconductor film are solved, and automatic and accurate measurement is realized.

The invention belongs to the related technical field of two-dimensional materials, and discloses a two-dimensional degenerate semiconductor film material and a preparation method and application thereof, and the preparation method comprises the following steps: S1, uniformly spin-coating a niobium salt compound solution on a substrate; and S2, based on the obtained substrate, preparing the two-dimensional degenerate semiconductor film material by adopting a chemical vapor deposition method, specifically, in a tubular furnace with an argon atmosphere, placing a sulfur source or a selenium source at the reaction upstream, placing a molybdenum foil in a sleeve in the tubular furnace and in the reaction midstream, and placing the substrate at the reaction downstream, so as to obtain the two-dimensional degenerate semiconductor film material. And introducing oxygen midway, and heating to a reaction temperature to generate the two-dimensional degenerate semiconductor film material. According to the method, the uniformly-covered precursor substance is formed on the surface (substrate) of the two-dimensional material through the spin-coating process, a high-temperature vacuum environment and complex equipment are not needed, modification and polarity regulation and control of the material can be completed only by regulating and controlling the concentration of the precursor solution, the spin-coating rotating speed and the spin-coating time, and low-cost batch processing can be achieved.

The invention belongs to the technical field of diluted magnetic semiconductor films, and particularly discloses a method for enhancing the magnetism of a Y-doped HfO2 diluted magnetic semiconductor film through gamma ray induction, and the method comprises the following steps: S1, placing a Y-doped HfO2 target material in a radio frequency device, fixing a 111-oriented YSZ substrate at the central position of a dial plate of the radio frequency device, and enabling the target material to correspond to the substrate; s2, turning on a radio frequency power supply, and officially sputtering after glow is stable to obtain a thin film; s3, annealing the film in a muffle furnace; and S4, placing the annealed film sample in a gamma ray device with 60Co as an irradiation source for irradiation to realize total ion implantation dose treatment. According to the method for enhancing the magnetism of the Y-doped HfO2 diluted magnetic semiconductor thin film through gamma ray induction, the problem that the saturation magnetization intensity of an existing diluted magnetic semiconductor thin film is not high is solved, and the magnetism of the Y-doped HfO2 epitaxial thin film is enhanced, regulated and controlled through gamma ray micro dose.

This invention discloses a high-coercivity hard magnetic oxide semiconductor thin film with perpendicular magnetic anisotropy and its preparation method. The invention employs a multi-target alternating gradient film preparation process, using NiFeO4 and NiCo2O4 targets for alternating sputtering to prepare NiCo2-xFexO4-NiCo2O4 gradient thin films. Experimental results show that the obtained films exhibit a coercivity as high as 1T and good conductivity, with an anomalous Hall resistivity reaching 52.5 μΩ·cm. This preparation method has the advantages of simplicity and low cost, providing new possibilities for the development of magnetic storage devices. This method has significant application potential for realizing high-density, high-speed, and low-power magnetic storage devices, contributing to the development and application of magnetic storage technology.

This semiconductor thin film structure comprises an Si layer (102) formed on an insulating layer (101), and a semiconductor layer (103). The Si layer (102) is composed of monocrystalline Si, and the planar orientation of the main surface is (110). The semiconductor layer (103) is composed of a group III-V compound semiconductor. The semiconductor layer (103) is grown through crystallization in a direction parallel to the surface of the insulating layer (101) from a side surface (104) of the Si layer (102). The side surface (104) can be a (-111) plane extending in the [1-12] direction of the Si layer (102). The side surface (104) can also be a (1-11) plane extending in the [1-1-2] direction of the Si layer (102).

The application discloses a kind of passivated antimony selenide (Sb2Se3) thin film solar cell and preparation method, the cell from bottom to top includes in turn: indium tin oxide (ITO) transparent conductive glass front electrode substrate, cadmium sulfide (CdS) electron transport layer, Sb2Se3 absorption layer, polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-TrFE) passivation layer and gold (Au) back electrode layer.The passivated antimony selenide (Sb2Se3) thin film is P (VDF-TrFE) thin film in Sb2Se3 absorption layer surface spin coating, and the surface deep level defect of passivation film is passivated.The advantages of the application are that the scientific problem that Sb2Se3 semiconductor thin film surface deep level defect causes Sb2Se3 solar cell open-circuit voltage to be low is successfully solved by P (VDF-TrFE) thin film strategy, so as to improve the performance of Sb2Se3 thin film solar cell.This innovative technology provides an important technical solution for preparing high-efficiency and low-cost Sb2Se3 thin film solar cell.

A semiconductor film including an aggregate of semiconductor quantum dots containing an In element and a Group 15 element, and a ligand coordinated to the semiconductor quantum dots, in which the Group 15 element includes an Sb element, the ligand includes a ligand containing a halogen element, the semiconductor film contains a nitrogen element, and a molar ratio of the nitrogen element to the In element is 0.01 to 0.10. A photodetector and an image sensor using the above-described semiconductor film.

The application discloses a high-speed annealing equipment and method for an organic semiconductor thin film, and relates to the technical field of the organic semiconductor thin film. The high-speed annealing equipment for the organic semiconductor thin film comprises a sealed cavity for annealing the organic semiconductor thin film, a heating plate arranged in the sealed cavity, a temperature measuring element arranged on the surface of the heating plate and located below the thin film, a liquid nitrogen nozzle connected with the inner wall of the top of the sealed cavity and located directly above the thin film, a power supply electrically connected with the heating plate, and a PID controller electrically connected with the heating plate, the temperature measuring element and the power supply. The application solves the problem that the current thermal annealing method is difficult to realize high-speed and accurate temperature control, and the annealing equipment and method for the organic semiconductor thin film are not mature.

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

This invention discloses a high-pressure explosion-proof high-viscosity semiconductor precursor vaporizer and vaporization method. The vaporizer includes: a precursor input system; a vaporizer body with a nozzle and a flash chamber inside, a transition isolation zone between the nozzle and the flash chamber, and a cooling jacket surrounding the nozzle; an electrostatic atomization control unit, including a high-voltage power supply and a counter electrode surrounding the flash chamber; a droplet trapping and filtering unit located at the outlet of the flash chamber; a gas flow control unit connected to the outlet of the filtering unit; and an explosion-proof protection system, including an inert gas positive pressure purging isolation sleeve, an arc detection circuit breaker, and a safety pressure relief assembly. This invention achieves efficient and intrinsically safe vaporization and closed-loop control of gas phase flow for high-viscosity, flammable, and explosive semiconductor precursors, and is applicable to semiconductor thin film fabrication processes such as atomic layer deposition and chemical vapor deposition.

The invention discloses semiconductor sputtering equipment and a semiconductor film forming method, and belongs to the technical field of semiconductors. The semiconductor sputtering equipment at least comprises a cavity; the at least one first target material is arranged on the first side in the cavity; the at least one second target material is arranged on the second side in the cavity; the at least one reaction gas source is used for introducing at least one reaction gas into the cavity; and the carrying table is arranged on the third side of the cavity, and a substrate is placed on the carrying table. According to the semiconductor sputtering equipment and the semiconductor equipment provided by the invention, a multi-element semiconductor film can be formed through reaction.

To enable the separable support of semiconductor thin films on a substrate. [Solution] The semiconductor structure (1) comprises a first substrate (101) as a substrate, a semiconductor thin film (100) formed on the first substrate (101), and a support (108). The support (108) is made of a resist material and supports the semiconductor thin film (100) with respect to the substrate (101) such that a gap is formed between the semiconductor thin film (100) and the first substrate (101). The support (108) is bonded to the first substrate (101) and to the lower surface of the semiconductor thin film (100) as the first surface facing the first substrate (101).

1. Name of the design product: semiconductor thin film deposition equipment. 2. Use of the design product: used for depositing functional materials on a substrate to make the substrate obtain special photoelectric properties. 3. Design points of the design product: in shape. 4. Picture or photo best showing the design points: perspective view.

The invention provides a preparation method and application of a precursor for laser synthesis of a MoS2 (WS2) film, and belongs to the technical field of semiconductor film materials.The preparation method comprises the following steps that S1, a container is placed in a water bath heating environment, deionized water, a molybdenum source or a tungsten source and a sulfur source are added, and a supersaturated solution is obtained after continuous stirring; and S2, in a water bath heating environment, adding a nonionic surfactant into the supersaturated solution, continuously stirring, and filtering after the nonionic surfactant and the supersaturated solution are fully mixed to obtain a precursor solution. Coating a substrate with the precursor solution, and drying the coated substrate; and irradiating the precursor solution coated on the substrate by using a laser beam to obtain the MoS2 (WS2) film. The process is simple and easy to implement, and rapid and low-cost preparation of the MoS2 (WS2) film can be realized.

To provide a high-definition display device having a deformed display area and having a high occupancy rate of the display area.SOLUTION: The display device includes a substrate, a gate line drive circuit, a signal line drive circuit, a plurality of gate lines, and a plurality of video signal lines. The substrate has a polygonal shape having n vertices, and includes a display region in which a plurality of pixels are arranged and a frame region surrounding the display region. The gate line drive circuit and the signal line drive circuit are located on the frame region. The plurality of gate lines extend from the gate line drive circuit to the display region. The plurality of video signal lines extend from the signal line drive circuit to the display region and intersect the plurality of gate lines. Each of the plurality of pixels includes a transistor including a first gate electrode, a semiconductor film over the first gate electrode, and a second gate electrode over the semiconductor film. Other features are described in detail in the description.SELECTED DRAWING: Figure 1

This invention discloses a thermal field temperature equalization control method and system based on aerodynamic layout optimization, belonging to the field of thermal field temperature control technology. The method is applied to a gas delivery system in semiconductor thin film deposition processes, including: constructing an aerodynamic-thermal field coupling model to quantitatively analyze the influence of pipeline geometry on the temperature field; physically optimizing the pipeline structure based on the analysis results to reduce airflow disturbance; deploying a sensor network and implementing dual-domain collaborative dynamic control, combining a fuzzy PID algorithm to stabilize airflow, and using a model predictive control algorithm to pre-adjust heating power to compensate for thermal hysteresis; embedding microchannel heat exchangers filled with phase change materials and nanofluids in areas with the risk of instantaneous thermal disturbance to suppress temperature spikes; and performing self-optimization through a digital twin. This invention can systematically improve gas temperature uniformity, response speed, and long-term stability from source to end, meeting the stringent requirements of semiconductor processes.

Provided is a film adhesive for semiconductors. This film adhesive for semiconductors contains: a thermosetting resin; a thermoplastic resin; a thermally conductive filler; and a polymer that has a main chain and a side chain bonded to the main chain, and includes a polar group in at least one of the main chain and the side chain. The content of the thermally conductive filler is 50% by mass or more, based on the total amount of the film adhesive for semiconductors.

The invention discloses a reaction chamber and semiconductor thin film deposition equipment, a spraying plate is arranged in the reaction chamber, a heating unit is arranged above the spraying plate, the reaction chamber comprises a chamber body, an upper cover plate, a first heat insulation unit and a second heat insulation unit, the upper cover plate is located at an opening of the chamber body, and the first heat insulation unit is located in the upper cover plate. The first heat insulation unit covers the outer side of the cavity body, and the second heat insulation unit is located on the outer side of the upper cover plate. Wherein the first heat insulation unit and the second heat insulation unit are polyetherimide. The polyetherimide has low thermal conductivity, can effectively reduce heat transfer, ensures that the chamber body and the upper cover plate are maintained at 180 DEG C and are not influenced by the high temperature of the spraying plate, has good dimensional stability at the high temperature, and avoids deformation or sealing failure caused by thermal circulation; the material does not release particle impurities in a high-temperature environment, so that the pollution risk in the cavity is remarkably reduced, and the strict requirement of a semiconductor process on cleanliness is met.

To provide a manufacturing method of a semiconductor device for manufacturing a highly reliable semiconductor device including a transistor having stable electric characteristics.SOLUTION: A method for manufacturing a semiconductor device, comprising: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with a microwave or a high-frequency electromagnetic wave; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.SELECTED DRAWING: Figure 1

The invention discloses a gas distribution device and semiconductor film equipment, the gas distribution device is arranged above a spraying plate, the gas distribution device comprises a gas distribution piece and a gas distribution valve island, the gas distribution piece is internally provided with a plurality of annular flow channels which are distributed at intervals in the radial direction and are concentrically arranged, and the annular flow channels are communicated with the spraying plate. A plurality of air outlet holes axially penetrating through the air distribution piece are uniformly formed in each annular flow channel in the circumferential direction; the air distribution valve island comprises a plurality of air distribution valve sets connected with the annular flow channels in a one-to-one correspondence mode, and each air distribution valve set independently controls connection and disconnection of the corresponding annular flow channel. According to the invention, the gas distribution piece with a plurality of independent controllable annular flow channels is arranged above the spraying plate above the wafer, so that the on-off and gas flow of the corresponding annular flow channels can be accurately controlled through the gas distribution valve island according to the radial distribution requirement of the wafer film thickness in the technological process; independent adjustment of reaction or diluent gas flow in different radial intervals is realized, so that the film thickness uniformity of each area of the wafer is adjusted in a targeted manner, and the increase or decrease of the film thickness in the specified radial interval is realized.