467 results about "Semiconductor thin films" patented technology

The invention discloses a vacuum transmission valve and semiconductor thin film equipment, the semiconductor thin film equipment comprises a reaction chamber, a transmission chamber and a vacuum transmission valve, and the vacuum transmission valve is installed between the reaction chamber and the transmission chamber. The vacuum transmission valve comprises a valve box, a valve plate fixing shaft, a first sealing valve plate, a second sealing valve plate and a driving assembly, and the valve plate fixing shaft, the first sealing valve plate, the second sealing valve plate and the driving assembly are arranged in the valve box. The first sealing valve plate and the second sealing valve plate are detachably and fixedly arranged on the valve plate fixing shaft back to back in the radial direction of the valve plate fixing shaft. The driving assembly is used for driving the valve plate fixing shaft to drive the first sealing valve plate to move towards the first opening so as to seal the first opening, and driving the second sealing valve plate to move towards the second opening so as to seal the second opening. The two-way sealing valve plate integrally mounted on the valve plate fixing shaft is driven by the driving assembly to move to achieve two-way sealing, and the occupied space is reduced.

The invention discloses a semiconductor film performance cooperative control method and system based on multi-parameter coupling, and belongs to the technical field of semiconductor material manufacturing, and the method specifically comprises the steps: determining a control parameter set containing plasma power density and other parameters, and building a multi-parameter coupling response model; generating sample points by using Latin hypercube sampling, quantifying a parameter interaction effect, and forming a dynamic weight matrix in combination with a graph model; monitoring data such as plasma emission spectrum intensity ratio in real time, comparing the data with a model predicted value, and correcting the model; a multi-objective optimization problem is constructed based on the correction model and the dynamic weight matrix, and optimal parameter configuration is solved by using a conjugate gradient method; alternately applying a high-frequency pulse and a relaxation stage according to the optimal configuration, and modulating the pulse frequency according to a Fibonacci sequence; and finally, based on the substrate temperature, planning a temperature rise path by using an S-shaped curve, superimposing cosine modulation, and introducing oscillation compensation gas to compensate the reactant concentration deviation, thereby realizing accurate optimization of the material preparation process.

The invention discloses a substrate pre-cleaning method based on PECVD (Plasma Enhanced Chemical Vapor Deposition), and belongs to the technical field of semiconductor film deposition. The method mainly comprises the steps that a substrate to be deposited is placed on a heater in a deposition cavity, and the vacuum degree in the closed deposition cavity is adjusted to a first preset value; argon is introduced into the deposition cavity at a preset flow rate, and the vacuum degree in the deposition cavity is adjusted to a second preset value; forming a radio-frequency electric field in the deposition cavity by using a high-frequency radio-frequency power supply, and ionizing argon gas by using the radio-frequency electric field to form argon ions; and the surface of the to-be-deposited substrate is bombarded through argon ions until impurities on the surface of the to-be-deposited substrate are removed, and the vacuum degree in the deposition cavity is adjusted back to a first preset value after the impurities are removed. The physical bombardment characteristic of argon plasma is utilized to achieve efficient removal of surface pollutants of the to-be-deposited substrate, and meanwhile seamless connection of pretreatment and the deposition process is guaranteed through cooperative control of all systems of equipment.

The invention relates to the technical field of film detection devices, and discloses a semiconductor film uniformity detection device which comprises a bottom plate, the top of the bottom plate is fixedly connected with a fixing column, the top end of the fixing column is fixedly connected with a fixing plate, the inner wall of the fixing plate is fixedly connected with a connecting plate, and the inner wall of the connecting plate is provided with an electric clamping block. The inner wall of the positioning block is rotationally connected with a clamping jaw through a torsional spring, the two sides of the clamping jaw are rotationally connected with connecting rods, the two sides of the moving plate are rotationally connected with rotating rods, the inner walls of the rotating rods are provided with stirring mechanisms used for reducing concentrated stress, and the inner walls of the rotating rods are fixedly connected with connecting rods. According to the device, the elastic roller is driven by the connecting rod to rotate to pre-clamp a film, it is ensured that the detection result is based on the tensile property of a sample, and the overall detection efficiency is improved.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ~107.

A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.

The invention discloses a flexible gas flow velocity sensor based on ionic conductive gel, and a preparation method and application thereof. The flexible gas flow velocity sensor specifically comprises a semiconductor active layer and a pore-forming agent which are blended, performing spin coating and etching on the interdigital electrode substrate to prepare a semiconductor film with a porous structure; blending an ionic gel precursor solution; and spin-coating or drop-casting the precursor solution, and preparing the gel film with the ionic conduction characteristic through photo-crosslinking. The sensor provided by the invention can realize sensing response to different inert gases and different gas flow rates under low power consumption, and realizes detection application to human respiration through the Bluetooth test module. Air flow is introduced to regulate and control ion mobility, and the sensing performance of the device is improved by means of the porous organic semiconductor film. The flexible sensor can be attached to other objects or the surface of the inner wall of an airflow pipeline, the device is simple in structure and easy to miniaturize, and a millimeter-level micro sensor can be achieved. And the method is suitable for batch preparation of low-power-consumption miniaturized devices.

The invention discloses an MPCVD semiconductor film uniformity real-time in-situ monitoring method and system, and the method comprises the steps: obtaining the spectral information and characterization data of a semiconductor film under different MPCVD growth technologies, and constructing a database; analyzing and training according to the database and the dual-channel residual architecture neural network to obtain a semiconductor film growth uniformity identification model; and acquiring real-time spectral information of the semiconductor film, and combining the semiconductor film growth uniformity identification model to obtain the growth condition of the semiconductor film. According to the method, rapid high-flux non-contact real-time analysis of the thickness, the doping concentration and the morphology of the thin film in the MPCVD growth process is realized by combining real-time spectral information and characterization data of the MPCVD and a machine learning algorithm. The method is also suitable for various material systems and growth conditions, does not need excessive human intervention and adjustment, and has high universality and applicability.

Provided are a semiconductor thin film and a semiconductor device including the same. The semiconductor device includes an oxide semiconductor layer having an amorphous phase and including tin (Sn) and a metal element other than tin (Sn), wherein a content of tin (Sn) is greater than 50 at% of a total content of tin (Sn) and the metal element other than tin (Sn), a first electrode and a second electrode disposed on the oxide semiconductor layer and spaced apart from each other, a gate electrode spaced apart from the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

The invention discloses a photosensitive pixel unit and an image sensor. The photosensitive pixel unit comprises a semiconductor substrate; a charge accumulation electrode, a transmission control electrode, and a signal readout electrode; the dielectric layer covers the charge accumulation electrode, the transmission control electrode and the signal reading electrode and is provided with an opening part; the N-type semiconductor layer is positioned above the dielectric layer, is in ohmic contact with the signal reading electrode through the opening part, and sequentially comprises a nanocrystalline particle layer, a metal oxide semiconductor thin film layer and an interface layer which is arranged between the nanocrystalline particle layer and the metal oxide semiconductor thin film layer and has two-dimensional electron gas characteristics from bottom to top; the photoelectric conversion layer is located above the N-type semiconductor layer; and the top electrode is positioned above the photoelectric conversion layer and is arranged opposite to the charge accumulation electrode, the transmission control electrode and the signal reading electrode.

The invention discloses a growth method, device, equipment and medium of a titanium nitride film, and relates to the technical field of semiconductor film preparation, the growth method of the titanium nitride film comprises the following steps: under a vacuum condition, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating mode, the deposition cycle of a single titanium nitride film is completed on the surface of the glass substrate in the atomic layer deposition reaction chamber; after each deposition cycle, taking the average value of the thickness values of the plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown in the deposition cycle; and according to the difference value between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle, dynamically adjusting the deposition cycle times until the thickness of the titanium nitride film reaches the target total thickness. The method is beneficial to improving the deposition rate of the titanium nitride film and improving the uniformity of the film.

The present invention relates to a semiconductor thin film physical vapor deposition device applied to the field of semiconductor-related technologies. Through the arrangement of a bidirectional cooling unit, when cooling the runway area, the directions of water inlet and water outlet can be continuously and alternately changed, thereby reducing the temperature difference between the water inlet and the water outlet of the horizontal cooling channel, so that the uniformity of cooling the runway area is improved, thereby making the film formation on the semiconductor surface more uniform; in addition, with the function of the liquid pusher plate, it can isolate the newly incoming cooling water and the cooling liquid that has absorbed heat, so that the cooling liquid that has absorbed heat can be fully discharged, effectively avoiding the occurrence of dead water, and further improving the cooling uniformity; at the same time, the liquid pusher plate can also disturb the junction of the newly incoming and the cooling liquid that has absorbed heat, thereby making the temperature transition at the junction more natural, effectively avoiding the occurrence of local excessive temperature differences, and maintaining stable and uniform molding of the film.

The invention provides a polarization sensor temperature drift calibration and real-time compensation method based on a semiconductor film, and belongs to the field of bionic polarization navigation. The method comprises the following steps: firstly, establishing a mapping relation between voltage response of each channel of a sensor and temperature variation, a temperature compensation coefficient, and parameters such as polarization degree, polarization angle and light intensity of incident light to obtain an actual output equation of the sensor; then, temperature compensation coefficients of all channels of the sensor are obtained through data fitting; secondly, selecting a reference temperature, obtaining sensor output under an indoor standard light source, performing normalization processing, and performing calibration to obtain three parameters including a proportionality coefficient, a polarization degree coefficient and a polarizer polarization analysis angle of each channel; and finally, solving an actual output equation of the sensor to realize temperature drift real-time compensation. The sensor output model is further improved based on the temperature characteristic of the semiconductor film material, the angle measurement error of the polarization sensor made of a semiconductor is effectively reduced, and the navigation accuracy is improved.

A kind of pentacene field effect transistor of improving anti-fatigue characteristic, n-type semiconductor layer and charge trapping layer with shallow energy level trap are arranged in pentacene field effect transistor structure;Device has bottom gate type structure: gate electrode / gate insulating layer / n-type semiconductor film / charge trapping dielectric layer with shallow energy level trap / tunneling layer / pentacene / source (drain) electrode;Gate electrode is conductor, resistivity is between 0.1-0.001 Ω·cm;Gate insulating layer dielectric film is insulator, thickness range is 5-150nm;The thickness of n-type semiconductor film layer is 1-200nm;Charge trapping dielectric layer with shallow energy level hole trap, thickness is 1-100nm;Tunneling layer is insulator, thickness range is 1-20nm;Pentacene thickness range is 1-100nm;Source-drain electrode is conductor, thickness range is 50-200nm;Gate electrode is conductor.

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

A method of manufacturing a stack includes providing an initial stack having a substrate substrate based on a first material and a first insulating layer having an array of walls made of a first insulating material, the array of walls being separated by trenches; filling the trench with a second insulating material, thereby forming a second insulating layer; and forming a semiconductor thin film on the second insulating layer.

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

The invention discloses a cleaning end point judgment method and a cleaning end point detection system for a thin film growth equipment chamber, and the cleaning end point judgment method comprises the following steps: obtaining the peak concentration C of characteristic gas and the time T when the characteristic gas reaches a peak value; calibrating formal cleaning parameters according to the characteristic gas peak concentration C and the time T; formal cleaning is carried out on the process chamber according to the calibrated parameters; characteristic gas generated by formal cleaning is monitored, and a signal quality factor Q is obtained; setting a standard value G; and comparing the signal quality factor Q with a standard value G, and judging a cleaning result. The cleaning end point detection system comprises a semiconductor film growth equipment process chamber, a tail gas emission pipeline and a detection device, the detection device is arranged on the tail gas emission pipeline to detect the concentration of the characteristic gas in real time. The problems that an existing cleaning method cannot quantify the pollution load before cleaning, and the self-adaptive anti-interference capability is lacked in the cleaning process can be solved.

[Problem] To provide an oxide semiconductor thin film capable of realizing a thin film transistor having a high-mobility active layer, a thin film semiconductor device using the oxide semiconductor thin film, and a method for manufacturing the thin film semiconductor device, and to provide a sputtering target that can be used to form the oxide semiconductor thin film, and a method for manufacturing the sputtering target. [Solution] The present invention provides an oxide semiconductor thin film comprising an amorphous oxide semiconductor mainly composed of an In-Ga-Ge-Zn-O oxide containing indium, gallium, germanium, and zinc, in which 70 < = In < = 90 at%, 0 < Ga < = 10 at%, 0 < Ge < = 10 at%, and 5 < = Zn < = 30 at%.

The invention relates to a gas concentration detection device for detecting binary gas concentration. The gas concentration detection device comprises a detection module, a sealing sleeve module and a controller module, the detection module comprises a detection cavity, a forming cavity integrally formed with the detection cavity, and a transducer sealed in the forming cavity by using a sealant. The sealing sleeve module has a sleeve container shape matching the shape of the detection module to accommodate and seal the detection chamber of the detection module, and includes an air inlet and an air outlet in fluid communication with the detection chamber. The controller module comprises an electric appliance module with a communication board, a power board and a main control board, a display module with a display screen and a driving board. The detection module, the sealing sleeve module and the controller module are modular assemblies, and the detection module and the sealing sleeve module as well as the detection module and the controller module are matched with each other and are detachably connected with each other. The gas concentration detection device for detecting the binary gas concentration is suitable for gas concentration detection of a gas supply system of a semiconductor thin film process.

The invention discloses an online thickness measurement system for semiconductor film deposition, and relates to the technical field of thickness measurement devices. The device comprises a main body structure which comprises a bottom plate, an adjusting plate located above the bottom plate and a supporting plate located above the adjusting plate; an automatic detection structure, comprising a stroke frame on the outer side of a supporting plate, a first motor located on one side of the upper end of a bottom plate, a first screw located at the output end of the first motor, a first nut, a second motor located at one end of the stroke frame and a second screw located at the output end of the second motor and rotationally installed in the stroke frame, wherein the first nut is connected to the outer wall of the first screw in a threaded and sleeving mode; the outer wall of the second screw is sleeved with the second nut in a threaded mode, and the stroke frame is located at the lower end of the second nut. By arranging the negative pressure adsorption fixing structure, the multi-dimensional mobile automatic detection mechanism and the adjustable clamping plate, the problems of low precision and poor efficiency of manual detection of the deposition thickness of the semiconductor film are solved, and automatic and accurate measurement is realized.

Provided are a semiconductor thin film and a semiconductor device including the same. The semiconductor device includes an oxide semiconductor layer having an amorphous phase and including tin (Sn) and a metal element other than tin (Sn), wherein a content of tin (Sn) is greater than 50 at % of a total content of tin (Sn) and the metal element other than tin (Sn), a first electrode and a second electrode disposed on the oxide semiconductor layer and spaced apart from each other, a gate electrode spaced apart from the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode.

The invention belongs to the related technical field of two-dimensional materials, and discloses a two-dimensional degenerate semiconductor film material and a preparation method and application thereof, and the preparation method comprises the following steps: S1, uniformly spin-coating a niobium salt compound solution on a substrate; and S2, based on the obtained substrate, preparing the two-dimensional degenerate semiconductor film material by adopting a chemical vapor deposition method, specifically, in a tubular furnace with an argon atmosphere, placing a sulfur source or a selenium source at the reaction upstream, placing a molybdenum foil in a sleeve in the tubular furnace and in the reaction midstream, and placing the substrate at the reaction downstream, so as to obtain the two-dimensional degenerate semiconductor film material. And introducing oxygen midway, and heating to a reaction temperature to generate the two-dimensional degenerate semiconductor film material. According to the method, the uniformly-covered precursor substance is formed on the surface (substrate) of the two-dimensional material through the spin-coating process, a high-temperature vacuum environment and complex equipment are not needed, modification and polarity regulation and control of the material can be completed only by regulating and controlling the concentration of the precursor solution, the spin-coating rotating speed and the spin-coating time, and low-cost batch processing can be achieved.

An α-Ga2O3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

The invention belongs to the technical field of diluted magnetic semiconductor films, and particularly discloses a method for enhancing the magnetism of a Y-doped HfO2 diluted magnetic semiconductor film through gamma ray induction, and the method comprises the following steps: S1, placing a Y-doped HfO2 target material in a radio frequency device, fixing a 111-oriented YSZ substrate at the central position of a dial plate of the radio frequency device, and enabling the target material to correspond to the substrate; s2, turning on a radio frequency power supply, and officially sputtering after glow is stable to obtain a thin film; s3, annealing the film in a muffle furnace; and S4, placing the annealed film sample in a gamma ray device with 60Co as an irradiation source for irradiation to realize total ion implantation dose treatment. According to the method for enhancing the magnetism of the Y-doped HfO2 diluted magnetic semiconductor thin film through gamma ray induction, the problem that the saturation magnetization intensity of an existing diluted magnetic semiconductor thin film is not high is solved, and the magnetism of the Y-doped HfO2 epitaxial thin film is enhanced, regulated and controlled through gamma ray micro dose.

This invention discloses a high-coercivity hard magnetic oxide semiconductor thin film with perpendicular magnetic anisotropy and its preparation method. The invention employs a multi-target alternating gradient film preparation process, using NiFeO4 and NiCo2O4 targets for alternating sputtering to prepare NiCo2-xFexO4-NiCo2O4 gradient thin films. Experimental results show that the obtained films exhibit a coercivity as high as 1T and good conductivity, with an anomalous Hall resistivity reaching 52.5 μΩ·cm. This preparation method has the advantages of simplicity and low cost, providing new possibilities for the development of magnetic storage devices. This method has significant application potential for realizing high-density, high-speed, and low-power magnetic storage devices, contributing to the development and application of magnetic storage technology.

This semiconductor thin film structure comprises an Si layer (102) formed on an insulating layer (101), and a semiconductor layer (103). The Si layer (102) is composed of monocrystalline Si, and the planar orientation of the main surface is (110). The semiconductor layer (103) is composed of a group III-V compound semiconductor. The semiconductor layer (103) is grown through crystallization in a direction parallel to the surface of the insulating layer (101) from a side surface (104) of the Si layer (102). The side surface (104) can be a (-111) plane extending in the [1-12] direction of the Si layer (102). The side surface (104) can also be a (1-11) plane extending in the [1-1-2] direction of the Si layer (102).

The application discloses a kind of passivated antimony selenide (Sb2Se3) thin film solar cell and preparation method, the cell from bottom to top includes in turn: indium tin oxide (ITO) transparent conductive glass front electrode substrate, cadmium sulfide (CdS) electron transport layer, Sb2Se3 absorption layer, polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-TrFE) passivation layer and gold (Au) back electrode layer.The passivated antimony selenide (Sb2Se3) thin film is P (VDF-TrFE) thin film in Sb2Se3 absorption layer surface spin coating, and the surface deep level defect of passivation film is passivated.The advantages of the application are that the scientific problem that Sb2Se3 semiconductor thin film surface deep level defect causes Sb2Se3 solar cell open-circuit voltage to be low is successfully solved by P (VDF-TrFE) thin film strategy, so as to improve the performance of Sb2Se3 thin film solar cell.This innovative technology provides an important technical solution for preparing high-efficiency and low-cost Sb2Se3 thin film solar cell.

A semiconductor film including an aggregate of semiconductor quantum dots containing an In element and a Group 15 element, and a ligand coordinated to the semiconductor quantum dots, in which the Group 15 element includes an Sb element, the ligand includes a ligand containing a halogen element, the semiconductor film contains a nitrogen element, and a molar ratio of the nitrogen element to the In element is 0.01 to 0.10. A photodetector and an image sensor using the above-described semiconductor film.