210 results about "Semiconductor thin films" patented technology

The invention discloses a substrate pre-cleaning method based on PECVD (Plasma Enhanced Chemical Vapor Deposition), and belongs to the technical field of semiconductor film deposition. The method mainly comprises the steps that a substrate to be deposited is placed on a heater in a deposition cavity, and the vacuum degree in the closed deposition cavity is adjusted to a first preset value; argon is introduced into the deposition cavity at a preset flow rate, and the vacuum degree in the deposition cavity is adjusted to a second preset value; forming a radio-frequency electric field in the deposition cavity by using a high-frequency radio-frequency power supply, and ionizing argon gas by using the radio-frequency electric field to form argon ions; and the surface of the to-be-deposited substrate is bombarded through argon ions until impurities on the surface of the to-be-deposited substrate are removed, and the vacuum degree in the deposition cavity is adjusted back to a first preset value after the impurities are removed. The physical bombardment characteristic of argon plasma is utilized to achieve efficient removal of surface pollutants of the to-be-deposited substrate, and meanwhile seamless connection of pretreatment and the deposition process is guaranteed through cooperative control of all systems of equipment.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

The invention discloses a photosensitive pixel unit and an image sensor. The photosensitive pixel unit comprises a semiconductor substrate; a charge accumulation electrode, a transmission control electrode, and a signal readout electrode; the dielectric layer covers the charge accumulation electrode, the transmission control electrode and the signal reading electrode and is provided with an opening part; the N-type semiconductor layer is positioned above the dielectric layer, is in ohmic contact with the signal reading electrode through the opening part, and sequentially comprises a nanocrystalline particle layer, a metal oxide semiconductor thin film layer and an interface layer which is arranged between the nanocrystalline particle layer and the metal oxide semiconductor thin film layer and has two-dimensional electron gas characteristics from bottom to top; the photoelectric conversion layer is located above the N-type semiconductor layer; and the top electrode is positioned above the photoelectric conversion layer and is arranged opposite to the charge accumulation electrode, the transmission control electrode and the signal reading electrode.

A kind of pentacene field effect transistor of improving anti-fatigue characteristic, n-type semiconductor layer and charge trapping layer with shallow energy level trap are arranged in pentacene field effect transistor structure;Device has bottom gate type structure: gate electrode / gate insulating layer / n-type semiconductor film / charge trapping dielectric layer with shallow energy level trap / tunneling layer / pentacene / source (drain) electrode;Gate electrode is conductor, resistivity is between 0.1-0.001 Ω·cm;Gate insulating layer dielectric film is insulator, thickness range is 5-150nm;The thickness of n-type semiconductor film layer is 1-200nm;Charge trapping dielectric layer with shallow energy level hole trap, thickness is 1-100nm;Tunneling layer is insulator, thickness range is 1-20nm;Pentacene thickness range is 1-100nm;Source-drain electrode is conductor, thickness range is 50-200nm;Gate electrode is conductor.

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

The invention discloses an online thickness measurement system for semiconductor film deposition, and relates to the technical field of thickness measurement devices. The device comprises a main body structure which comprises a bottom plate, an adjusting plate located above the bottom plate and a supporting plate located above the adjusting plate; an automatic detection structure, comprising a stroke frame on the outer side of a supporting plate, a first motor located on one side of the upper end of a bottom plate, a first screw located at the output end of the first motor, a first nut, a second motor located at one end of the stroke frame and a second screw located at the output end of the second motor and rotationally installed in the stroke frame, wherein the first nut is connected to the outer wall of the first screw in a threaded and sleeving mode; the outer wall of the second screw is sleeved with the second nut in a threaded mode, and the stroke frame is located at the lower end of the second nut. By arranging the negative pressure adsorption fixing structure, the multi-dimensional mobile automatic detection mechanism and the adjustable clamping plate, the problems of low precision and poor efficiency of manual detection of the deposition thickness of the semiconductor film are solved, and automatic and accurate measurement is realized.

The invention belongs to the related technical field of two-dimensional materials, and discloses a two-dimensional degenerate semiconductor film material and a preparation method and application thereof, and the preparation method comprises the following steps: S1, uniformly spin-coating a niobium salt compound solution on a substrate; and S2, based on the obtained substrate, preparing the two-dimensional degenerate semiconductor film material by adopting a chemical vapor deposition method, specifically, in a tubular furnace with an argon atmosphere, placing a sulfur source or a selenium source at the reaction upstream, placing a molybdenum foil in a sleeve in the tubular furnace and in the reaction midstream, and placing the substrate at the reaction downstream, so as to obtain the two-dimensional degenerate semiconductor film material. And introducing oxygen midway, and heating to a reaction temperature to generate the two-dimensional degenerate semiconductor film material. According to the method, the uniformly-covered precursor substance is formed on the surface (substrate) of the two-dimensional material through the spin-coating process, a high-temperature vacuum environment and complex equipment are not needed, modification and polarity regulation and control of the material can be completed only by regulating and controlling the concentration of the precursor solution, the spin-coating rotating speed and the spin-coating time, and low-cost batch processing can be achieved.

The invention belongs to the technical field of diluted magnetic semiconductor films, and particularly discloses a method for enhancing the magnetism of a Y-doped HfO2 diluted magnetic semiconductor film through gamma ray induction, and the method comprises the following steps: S1, placing a Y-doped HfO2 target material in a radio frequency device, fixing a 111-oriented YSZ substrate at the central position of a dial plate of the radio frequency device, and enabling the target material to correspond to the substrate; s2, turning on a radio frequency power supply, and officially sputtering after glow is stable to obtain a thin film; s3, annealing the film in a muffle furnace; and S4, placing the annealed film sample in a gamma ray device with 60Co as an irradiation source for irradiation to realize total ion implantation dose treatment. According to the method for enhancing the magnetism of the Y-doped HfO2 diluted magnetic semiconductor thin film through gamma ray induction, the problem that the saturation magnetization intensity of an existing diluted magnetic semiconductor thin film is not high is solved, and the magnetism of the Y-doped HfO2 epitaxial thin film is enhanced, regulated and controlled through gamma ray micro dose.

This invention discloses a high-coercivity hard magnetic oxide semiconductor thin film with perpendicular magnetic anisotropy and its preparation method. The invention employs a multi-target alternating gradient film preparation process, using NiFeO4 and NiCo2O4 targets for alternating sputtering to prepare NiCo2-xFexO4-NiCo2O4 gradient thin films. Experimental results show that the obtained films exhibit a coercivity as high as 1T and good conductivity, with an anomalous Hall resistivity reaching 52.5 μΩ·cm. This preparation method has the advantages of simplicity and low cost, providing new possibilities for the development of magnetic storage devices. This method has significant application potential for realizing high-density, high-speed, and low-power magnetic storage devices, contributing to the development and application of magnetic storage technology.

This semiconductor thin film structure comprises an Si layer (102) formed on an insulating layer (101), and a semiconductor layer (103). The Si layer (102) is composed of monocrystalline Si, and the planar orientation of the main surface is (110). The semiconductor layer (103) is composed of a group III-V compound semiconductor. The semiconductor layer (103) is grown through crystallization in a direction parallel to the surface of the insulating layer (101) from a side surface (104) of the Si layer (102). The side surface (104) can be a (-111) plane extending in the [1-12] direction of the Si layer (102). The side surface (104) can also be a (1-11) plane extending in the [1-1-2] direction of the Si layer (102).

The application discloses a kind of passivated antimony selenide (Sb2Se3) thin film solar cell and preparation method, the cell from bottom to top includes in turn: indium tin oxide (ITO) transparent conductive glass front electrode substrate, cadmium sulfide (CdS) electron transport layer, Sb2Se3 absorption layer, polyvinylidene fluoride-trifluoroethylene copolymer P (VDF-TrFE) passivation layer and gold (Au) back electrode layer.The passivated antimony selenide (Sb2Se3) thin film is P (VDF-TrFE) thin film in Sb2Se3 absorption layer surface spin coating, and the surface deep level defect of passivation film is passivated.The advantages of the application are that the scientific problem that Sb2Se3 semiconductor thin film surface deep level defect causes Sb2Se3 solar cell open-circuit voltage to be low is successfully solved by P (VDF-TrFE) thin film strategy, so as to improve the performance of Sb2Se3 thin film solar cell.This innovative technology provides an important technical solution for preparing high-efficiency and low-cost Sb2Se3 thin film solar cell.

A semiconductor film including an aggregate of semiconductor quantum dots containing an In element and a Group 15 element, and a ligand coordinated to the semiconductor quantum dots, in which the Group 15 element includes an Sb element, the ligand includes a ligand containing a halogen element, the semiconductor film contains a nitrogen element, and a molar ratio of the nitrogen element to the In element is 0.01 to 0.10. A photodetector and an image sensor using the above-described semiconductor film.

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

To enable the separable support of semiconductor thin films on a substrate. [Solution] The semiconductor structure (1) comprises a first substrate (101) as a substrate, a semiconductor thin film (100) formed on the first substrate (101), and a support (108). The support (108) is made of a resist material and supports the semiconductor thin film (100) with respect to the substrate (101) such that a gap is formed between the semiconductor thin film (100) and the first substrate (101). The support (108) is bonded to the first substrate (101) and to the lower surface of the semiconductor thin film (100) as the first surface facing the first substrate (101).

1. Name of the design product: semiconductor thin film deposition equipment. 2. Use of the design product: used for depositing functional materials on a substrate to make the substrate obtain special photoelectric properties. 3. Design points of the design product: in shape. 4. Picture or photo best showing the design points: perspective view.

The invention provides a preparation method and application of a precursor for laser synthesis of a MoS2 (WS2) film, and belongs to the technical field of semiconductor film materials.The preparation method comprises the following steps that S1, a container is placed in a water bath heating environment, deionized water, a molybdenum source or a tungsten source and a sulfur source are added, and a supersaturated solution is obtained after continuous stirring; and S2, in a water bath heating environment, adding a nonionic surfactant into the supersaturated solution, continuously stirring, and filtering after the nonionic surfactant and the supersaturated solution are fully mixed to obtain a precursor solution. Coating a substrate with the precursor solution, and drying the coated substrate; and irradiating the precursor solution coated on the substrate by using a laser beam to obtain the MoS2 (WS2) film. The process is simple and easy to implement, and rapid and low-cost preparation of the MoS2 (WS2) film can be realized.

This invention discloses a thermal field temperature equalization control method and system based on aerodynamic layout optimization, belonging to the field of thermal field temperature control technology. The method is applied to a gas delivery system in semiconductor thin film deposition processes, including: constructing an aerodynamic-thermal field coupling model to quantitatively analyze the influence of pipeline geometry on the temperature field; physically optimizing the pipeline structure based on the analysis results to reduce airflow disturbance; deploying a sensor network and implementing dual-domain collaborative dynamic control, combining a fuzzy PID algorithm to stabilize airflow, and using a model predictive control algorithm to pre-adjust heating power to compensate for thermal hysteresis; embedding microchannel heat exchangers filled with phase change materials and nanofluids in areas with the risk of instantaneous thermal disturbance to suppress temperature spikes; and performing self-optimization through a digital twin. This invention can systematically improve gas temperature uniformity, response speed, and long-term stability from source to end, meeting the stringent requirements of semiconductor processes.

Provided is a film adhesive for semiconductors. This film adhesive for semiconductors contains: a thermosetting resin; a thermoplastic resin; a thermally conductive filler; and a polymer that has a main chain and a side chain bonded to the main chain, and includes a polar group in at least one of the main chain and the side chain. The content of the thermally conductive filler is 50% by mass or more, based on the total amount of the film adhesive for semiconductors.

To provide a manufacturing method of a semiconductor device for manufacturing a highly reliable semiconductor device including a transistor having stable electric characteristics.SOLUTION: A method for manufacturing a semiconductor device, comprising: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with a microwave or a high-frequency electromagnetic wave; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.SELECTED DRAWING: Figure 1

The application provides a wafer-level room-temperature monolayer magnetic semiconductor thin film and a preparation method thereof, and relates to the technical field of two-dimensional magnetic semiconductor material preparation.The present application is based on a three-temperature-zone low-pressure chemical vapor deposition system, and the wafer-level controllable preparation of a single-cell thickness spinel structure Fe2GaO4 thin film is realized through the following steps: the partitioned treatment of Te powder, metal precursors and sapphire substrates in three temperature zones, and the preparation method of sequentially blowing and replacing by inert carrier gas and hydrogen-argon mixed gas, segmented preheating and temperature rising, oxygen regulation and control and in-situ heat preservation annealing.Meanwhile, the prepared Fe2GaO4 thin film has a thickness of only 0.53 nm, a Curie temperature of more than 300 K, intrinsic ferromagnetism at room temperature, clear optical band gap and semiconductor characteristics, and can be widely applied to various new-type spin electronic devices.

The invention discloses a 2D / 3D / 2D halide semiconductor heterojunction and a preparation method and application thereof, and the preparation method comprises the steps: introducing a 2D halide semiconductor seed crystal into the bottom and the top of a 3D halide semiconductor through an all-solution method, and forming the 2D / 3D / 2D halide semiconductor heterojunction. The bottom 2D halide semiconductor forms cascade energy band arrangement between the 3D halide semiconductor layer and the hole transport layer, so that the thermal ion loss is reduced, the interface defect is passivated, and the epitaxial crystallization of the 3D halide semiconductor film is enhanced; the top 2D halide semiconductor optimizes interface level matching of the 3D halide semiconductor layer and the electron transport layer, facilitating electron extraction. According to the heterojunction, the open-circuit voltage, the short-circuit current density, the filling factor and the energy conversion efficiency of the device are remarkably improved, the efficiency reaches 25.25%, the stability of the device is effectively improved, and invasion of water and oxygen is isolated.

An image sensor for short wavelength light includes a semiconductor membrane, circuit elements formed on a first surface of the semiconductor membrane, and a boron-coated textured surface on a second surface of the semiconductor membrane. The textured surface includes a pseudo-random, periodic, and / or random distribution of right-angle pyramids, inverted-angle pyramids, and / or nanopyramids. The textured surface reduces reflection of incident light across a wide band in the DUV and VUV regions, thus increasing the amount of light absorbed and improving the efficiency of the image sensor. The reflectance can be further reduced by applying an anti-reflective coating to the textured surface. The image sensor can be a two-dimensional area sensor or a one-dimensional array sensor, and incorporated into an inspection system.

Provided is a film adhesive for semiconductors. This film adhesive for semiconductors contains: a thermosetting resin; a thermoplastic resin; a thermally conductive filler; and a polymer that has a main chain and a side chain bonded to the main chain, and includes a polar group in at least one of the main chain and the side chain. The content of the thermally conductive filler is 50% by mass or more, based on the total amount of the film adhesive for semiconductors.

The invention discloses a halide semiconductor n-p homojunction and a preparation method and application thereof, and the preparation method comprises the steps: introducing trichloro [3-(pentafluorophenyl) propyl] silane (TPFS for short) to the surface of a halide semiconductor through a solution method, and constructing the halide semiconductor n-p homojunction. The trichloro [3-(pentafluorophenyl) propyl] silane can greatly improve the work function of the surface of a halide semiconductor, so that the surface of the halide semiconductor is converted from an n type to a p type, hole extraction is facilitated, electrons are blocked, and interface recombination is inhibited. In addition, trichloro [3-(pentafluorophenyl) propyl] silane can passivate defects on the surface of a halide semiconductor and enhance the stability of a halide semiconductor film. The process is simple, the cost is low, and large-area preparation and commercial application of halide semiconductor photoelectric devices are facilitated.

The invention relates to a semiconductor nitride film material and a preparation method thereof, and belongs to the technical field of semiconductor film materials. The semiconductor nitride thin film material comprises the following components: a compound with a chemical formula of Al < 1-x > Si < x > N < 1-y > O < y >, the compound is a hexagonal system, and the crystal space group is P63mc. The preparation method of the semiconductor nitride thin film material comprises the following steps: cleaning a substrate; according to the method, Al or Al and Si are used as a target material, the target material is sputtered in a high-power pulse magnetron sputtering mode in an argon and nitrogen mixed gas environment, and the semiconductor nitride thin film material is deposited on a substrate. The semiconductor nitride film material has excellent insulativity, thermal stability, wear resistance and hydrophobicity at the same time, and can meet application requirements in various complex environments.

This application provides a semiconductor thin film processing apparatus and a semiconductor thin film processing method. The semiconductor thin film processing apparatus includes a chamber base, a cover, and a gas distribution assembly. The chamber base has a top opening and multiple extraction ports. The cover is detachably disposed at the top opening and forms a reaction chamber with the chamber base. The cover has a mounting groove. The gas distribution assembly is mounted in the mounting groove and includes a separator. The separator includes a central portion and four branches. The four branches are distributed around the central portion, and the projections of the four branches onto the chamber base divide the reaction chamber into four reaction regions. Each reaction region corresponds to at least one extraction port. This application improves the thin film growth rate by dividing the reaction chamber into four reaction regions by the four branches distributed around the central portion and their projections onto the chamber base. The at least one extraction port for each reaction region ensures effective gas extraction.

In a transistor having an oxide semiconductor film, improving the field-effect mobility Together, we will improve reliability. [Solution] A semiconductor device having an oxide semiconductor film, wherein the semiconductor device has a gate electrode and , an insulating film on the gate electrode, an oxide semiconductor film on the insulating film, and a pair of electric electrodes on the oxide semiconductor film. The oxide semiconductor film has an electrode and a first oxide semiconductor film and on the first oxide semiconductor film The first oxide semiconductor film and the second oxide semiconductor film are, Each has the same elements, and the first oxide semiconductor film is more crystalline than the second oxide semiconductor film. It has areas with low sensitivity.

The application discloses a semiconductor thin film deposition process intelligent recommendation system and method based on a knowledge graph, belongs to the technical field of semiconductor manufacturing processes, and comprises the following: a semiconductor thin film deposition process knowledge graph construction module; a prompt word template generation module: used for receiving process requirements and constraint conditions input by a user, performing semantic analysis on the process requirements and constraint conditions, filling the analysis results into a preset prompt word template, and outputting standardized instructions meeting the calling requirements of a large language model; and a large language model reasoning module: used for receiving the standardized instructions, performing semantic retrieval and logical reasoning on the standardized instructions within the constraint range of the semiconductor thin film deposition process knowledge graph, generating a plurality of candidate thin film deposition process schemes meeting process constraint conditions based on entity relationships and causal associations in the semiconductor thin film deposition process knowledge graph; and the application constructs a complete process recommendation solution and exhibits significant advantages in multiple aspects.

The invention discloses a thermal field temperature equalization control method and system based on aerodynamic layout optimization, and belongs to the technical field of thermal field temperature control. The method is applied to a gas delivery system of a semiconductor thin film deposition process and comprises the following steps: constructing a pneumatic-thermal field coupling model, and quantitatively analyzing the influence of geometric characteristics of a pipeline on a temperature field; performing physical optimization on the pipeline structure based on the analysis result to reduce airflow disturbance; deploying a sensor network and executing double-domain cooperative dynamic control, stabilizing airflow in combination with a fuzzy PID algorithm, and presetting heating power by using a model predictive control algorithm to compensate thermal lag; a micro-channel heat exchanger filled with a phase change material and nanofluid is embedded in the area with the instantaneous thermal disturbance risk, so that the temperature peak is restrained; and self-optimization is carried out through the digital twinborn body. The gas temperature uniformity, the response speed and the long-term stability can be systematically improved from the source to the tail end, and the harsh requirements of the semiconductor process are met.

The invention provides a terahertz amplitude modulator, and the modulator comprises a first quartz substrate layer which is disposed on the incident surface layer of terahertz waves, and is used for carrying out the resonant coupling superposition of a plurality of reflected waves of the terahertz waves; the semiconductor film layer is laid on the lower surface of the quartz substrate in parallel; the gold electrode layer comprises a first gold electrode and a second gold electrode which are arranged in an isolated manner; wherein the first electrode layer is connected with the edge part of the semiconductor film layer; a sealed cavity is formed between the second gold electrode layer and the main body part of the semiconductor thin film layer through the insulating material around the second gold electrode layer; the ionic liquid is contained in the sealed cavity below the semiconductor thin film layer; the reflectivity between the ionic liquid and the semiconductor thin film layer is the same; a dynamic voltage is applied between the first gold electrode and the second gold electrode, the change of the conductivity of the semiconductor film layer causes the change of the reflectivity of the plurality of reflecting surfaces, the terahertz reflected waves reflected by the plurality of reflecting surfaces are subjected to resonant coupling superposition, the amplitude change of the reflected waves is obtained, and the amplitude modulation is realized.