555 results about "Semiconductor thin films" patented technology

The invention discloses a vacuum transmission valve and semiconductor thin film equipment, the semiconductor thin film equipment comprises a reaction chamber, a transmission chamber and a vacuum transmission valve, and the vacuum transmission valve is installed between the reaction chamber and the transmission chamber. The vacuum transmission valve comprises a valve box, a valve plate fixing shaft, a first sealing valve plate, a second sealing valve plate and a driving assembly, and the valve plate fixing shaft, the first sealing valve plate, the second sealing valve plate and the driving assembly are arranged in the valve box. The first sealing valve plate and the second sealing valve plate are detachably and fixedly arranged on the valve plate fixing shaft back to back in the radial direction of the valve plate fixing shaft. The driving assembly is used for driving the valve plate fixing shaft to drive the first sealing valve plate to move towards the first opening so as to seal the first opening, and driving the second sealing valve plate to move towards the second opening so as to seal the second opening. The two-way sealing valve plate integrally mounted on the valve plate fixing shaft is driven by the driving assembly to move to achieve two-way sealing, and the occupied space is reduced.

The invention discloses a semiconductor film performance cooperative control method and system based on multi-parameter coupling, and belongs to the technical field of semiconductor material manufacturing, and the method specifically comprises the steps: determining a control parameter set containing plasma power density and other parameters, and building a multi-parameter coupling response model; generating sample points by using Latin hypercube sampling, quantifying a parameter interaction effect, and forming a dynamic weight matrix in combination with a graph model; monitoring data such as plasma emission spectrum intensity ratio in real time, comparing the data with a model predicted value, and correcting the model; a multi-objective optimization problem is constructed based on the correction model and the dynamic weight matrix, and optimal parameter configuration is solved by using a conjugate gradient method; alternately applying a high-frequency pulse and a relaxation stage according to the optimal configuration, and modulating the pulse frequency according to a Fibonacci sequence; and finally, based on the substrate temperature, planning a temperature rise path by using an S-shaped curve, superimposing cosine modulation, and introducing oscillation compensation gas to compensate the reactant concentration deviation, thereby realizing accurate optimization of the material preparation process.

The invention relates to a method for transferring a wafer-size two-dimensional semiconductor film through a selenium-assisted dry method, and belongs to the technical field of semiconductors. The method comprises the following steps: sequentially preparing a Se nano layer, a supporting layer and a water-soluble glue layer on a two-dimensional semiconductor film wafer containing a growth substrate; stripping the two-dimensional semiconductor film, the Se nano layer and the supporting layer from the growth substrate together by using a water-soluble glue layer, and then adhering the two-dimensional semiconductor film to a target substrate by taking the two-dimensional semiconductor film as an adhering surface; soaking in water to remove the water-soluble adhesive layer; and removing the support layer through reactive ion etching, and finally performing annealing treatment in an inert gas atmosphere to remove the Se nano layer, thereby obtaining the two-dimensional semiconductor film on the target substrate, and completing the transfer of the two-dimensional semiconductor film from the growth substrate to the target substrate. According to the invention, the wrinkle-free, residue-free and pollution-free high-quality complete cleaning transfer of the wafer-size two-dimensional semiconductor film can be effectively realized.

The invention discloses a vacuum transmission valve, a control method and semiconductor thin film equipment, the vacuum transmission valve is applied to the semiconductor thin film equipment, the vacuum transmission valve comprises a sealing valve box, a first sealing element is arranged between the sealing valve box and a process chamber, and the vacuum transmission valve further comprises a second sealing element arranged on the sealing valve box and used for sealing the process chamber. The first sealing element is positioned between the first sealing element and the process chamber; and the switching part is arranged on the sealing valve box and is used for fixedly mounting the second sealing element on the sealing valve box. According to the vacuum transmission valve, the switching part and the second sealing piece are arranged on the sealing valve box of the vacuum transmission valve, and the second sealing piece is located between the first sealing piece and the process cavity, so that even if the second sealing piece is corroded or gas leakage occurs, the second sealing piece can be sealed; in addition, the effect of replacing the second sealing element can be achieved by directly disassembling the switching part, so that the sealing valve box is prevented from being disconnected from the process chamber, the downtime of equipment is shortened, and the replacement efficiency of the sealing element is improved.

The invention discloses a substrate pre-cleaning method based on PECVD (Plasma Enhanced Chemical Vapor Deposition), and belongs to the technical field of semiconductor film deposition. The method mainly comprises the steps that a substrate to be deposited is placed on a heater in a deposition cavity, and the vacuum degree in the closed deposition cavity is adjusted to a first preset value; argon is introduced into the deposition cavity at a preset flow rate, and the vacuum degree in the deposition cavity is adjusted to a second preset value; forming a radio-frequency electric field in the deposition cavity by using a high-frequency radio-frequency power supply, and ionizing argon gas by using the radio-frequency electric field to form argon ions; and the surface of the to-be-deposited substrate is bombarded through argon ions until impurities on the surface of the to-be-deposited substrate are removed, and the vacuum degree in the deposition cavity is adjusted back to a first preset value after the impurities are removed. The physical bombardment characteristic of argon plasma is utilized to achieve efficient removal of surface pollutants of the to-be-deposited substrate, and meanwhile seamless connection of pretreatment and the deposition process is guaranteed through cooperative control of all systems of equipment.

The invention relates to the technical field of film detection devices, and discloses a semiconductor film uniformity detection device which comprises a bottom plate, the top of the bottom plate is fixedly connected with a fixing column, the top end of the fixing column is fixedly connected with a fixing plate, the inner wall of the fixing plate is fixedly connected with a connecting plate, and the inner wall of the connecting plate is provided with an electric clamping block. The inner wall of the positioning block is rotationally connected with a clamping jaw through a torsional spring, the two sides of the clamping jaw are rotationally connected with connecting rods, the two sides of the moving plate are rotationally connected with rotating rods, the inner walls of the rotating rods are provided with stirring mechanisms used for reducing concentrated stress, and the inner walls of the rotating rods are fixedly connected with connecting rods. According to the device, the elastic roller is driven by the connecting rod to rotate to pre-clamp a film, it is ensured that the detection result is based on the tensile property of a sample, and the overall detection efficiency is improved.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ~107.

A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.

The invention discloses a flexible gas flow velocity sensor based on ionic conductive gel, and a preparation method and application thereof. The flexible gas flow velocity sensor specifically comprises a semiconductor active layer and a pore-forming agent which are blended, performing spin coating and etching on the interdigital electrode substrate to prepare a semiconductor film with a porous structure; blending an ionic gel precursor solution; and spin-coating or drop-casting the precursor solution, and preparing the gel film with the ionic conduction characteristic through photo-crosslinking. The sensor provided by the invention can realize sensing response to different inert gases and different gas flow rates under low power consumption, and realizes detection application to human respiration through the Bluetooth test module. Air flow is introduced to regulate and control ion mobility, and the sensing performance of the device is improved by means of the porous organic semiconductor film. The flexible sensor can be attached to other objects or the surface of the inner wall of an airflow pipeline, the device is simple in structure and easy to miniaturize, and a millimeter-level micro sensor can be achieved. And the method is suitable for batch preparation of low-power-consumption miniaturized devices.

The invention discloses an MPCVD semiconductor film uniformity real-time in-situ monitoring method and system, and the method comprises the steps: obtaining the spectral information and characterization data of a semiconductor film under different MPCVD growth technologies, and constructing a database; analyzing and training according to the database and the dual-channel residual architecture neural network to obtain a semiconductor film growth uniformity identification model; and acquiring real-time spectral information of the semiconductor film, and combining the semiconductor film growth uniformity identification model to obtain the growth condition of the semiconductor film. According to the method, rapid high-flux non-contact real-time analysis of the thickness, the doping concentration and the morphology of the thin film in the MPCVD growth process is realized by combining real-time spectral information and characterization data of the MPCVD and a machine learning algorithm. The method is also suitable for various material systems and growth conditions, does not need excessive human intervention and adjustment, and has high universality and applicability.

Provided are a semiconductor thin film and a semiconductor device including the same. The semiconductor device includes an oxide semiconductor layer having an amorphous phase and including tin (Sn) and a metal element other than tin (Sn), wherein a content of tin (Sn) is greater than 50 at% of a total content of tin (Sn) and the metal element other than tin (Sn), a first electrode and a second electrode disposed on the oxide semiconductor layer and spaced apart from each other, a gate electrode spaced apart from the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode.

Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output / transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on / off current ratio of ˜107.

The invention discloses a photosensitive pixel unit and an image sensor. The photosensitive pixel unit comprises a semiconductor substrate; a charge accumulation electrode, a transmission control electrode, and a signal readout electrode; the dielectric layer covers the charge accumulation electrode, the transmission control electrode and the signal reading electrode and is provided with an opening part; the N-type semiconductor layer is positioned above the dielectric layer, is in ohmic contact with the signal reading electrode through the opening part, and sequentially comprises a nanocrystalline particle layer, a metal oxide semiconductor thin film layer and an interface layer which is arranged between the nanocrystalline particle layer and the metal oxide semiconductor thin film layer and has two-dimensional electron gas characteristics from bottom to top; the photoelectric conversion layer is located above the N-type semiconductor layer; and the top electrode is positioned above the photoelectric conversion layer and is arranged opposite to the charge accumulation electrode, the transmission control electrode and the signal reading electrode.

The invention discloses a growth method, device, equipment and medium of a titanium nitride film, and relates to the technical field of semiconductor film preparation, the growth method of the titanium nitride film comprises the following steps: under a vacuum condition, introducing a titanium-containing precursor and ammonia plasma into an atomic layer deposition reaction chamber in a pulse alternating mode, the deposition cycle of a single titanium nitride film is completed on the surface of the glass substrate in the atomic layer deposition reaction chamber; after each deposition cycle, taking the average value of the thickness values of the plurality of thickness detection points of the titanium nitride film as the reference thickness of the titanium nitride film grown in the deposition cycle; and according to the difference value between the target total thickness of the titanium nitride film and the reference thickness of the deposition cycle, dynamically adjusting the deposition cycle times until the thickness of the titanium nitride film reaches the target total thickness. The method is beneficial to improving the deposition rate of the titanium nitride film and improving the uniformity of the film.

The present invention relates to a semiconductor thin film physical vapor deposition device applied to the field of semiconductor-related technologies. Through the arrangement of a bidirectional cooling unit, when cooling the runway area, the directions of water inlet and water outlet can be continuously and alternately changed, thereby reducing the temperature difference between the water inlet and the water outlet of the horizontal cooling channel, so that the uniformity of cooling the runway area is improved, thereby making the film formation on the semiconductor surface more uniform; in addition, with the function of the liquid pusher plate, it can isolate the newly incoming cooling water and the cooling liquid that has absorbed heat, so that the cooling liquid that has absorbed heat can be fully discharged, effectively avoiding the occurrence of dead water, and further improving the cooling uniformity; at the same time, the liquid pusher plate can also disturb the junction of the newly incoming and the cooling liquid that has absorbed heat, thereby making the temperature transition at the junction more natural, effectively avoiding the occurrence of local excessive temperature differences, and maintaining stable and uniform molding of the film.

The invention provides a memory device with electric memcapacitor and optical memcapacitor behaviors, which comprises an upper electrode and a lower electrode, and further comprises a heterostructure positioned between the upper electrode and the lower electrode, and the heterostructure sequentially comprises an n-type metal oxide semiconductor film layer and a heavily doped p-type silicon semiconductor layer from top to bottom. According to the memcapacitor physical model with the width modulated potential barrier region, the device is excited by using an electric signal or an optical signal, so that the ionization oxygen vacancy concentration in the potential barrier region is increased, the width of the potential barrier region is reduced, and the capacitance value of the device is increased. According to the invention, the photoelectric memcapacitor device is successfully constructed by using a heterostructure, and the regulation and control of the device capacitance by an electric signal and an optical signal are realized, so that the memory behaviors of an electric memcapacitor and an optical memcapacitor are realized in a single device.

The invention provides a polarization sensor temperature drift calibration and real-time compensation method based on a semiconductor film, and belongs to the field of bionic polarization navigation. The method comprises the following steps: firstly, establishing a mapping relation between voltage response of each channel of a sensor and temperature variation, a temperature compensation coefficient, and parameters such as polarization degree, polarization angle and light intensity of incident light to obtain an actual output equation of the sensor; then, temperature compensation coefficients of all channels of the sensor are obtained through data fitting; secondly, selecting a reference temperature, obtaining sensor output under an indoor standard light source, performing normalization processing, and performing calibration to obtain three parameters including a proportionality coefficient, a polarization degree coefficient and a polarizer polarization analysis angle of each channel; and finally, solving an actual output equation of the sensor to realize temperature drift real-time compensation. The sensor output model is further improved based on the temperature characteristic of the semiconductor film material, the angle measurement error of the polarization sensor made of a semiconductor is effectively reduced, and the navigation accuracy is improved.

A kind of pentacene field effect transistor of improving anti-fatigue characteristic, n-type semiconductor layer and charge trapping layer with shallow energy level trap are arranged in pentacene field effect transistor structure;Device has bottom gate type structure: gate electrode / gate insulating layer / n-type semiconductor film / charge trapping dielectric layer with shallow energy level trap / tunneling layer / pentacene / source (drain) electrode;Gate electrode is conductor, resistivity is between 0.1-0.001 Ω·cm;Gate insulating layer dielectric film is insulator, thickness range is 5-150nm;The thickness of n-type semiconductor film layer is 1-200nm;Charge trapping dielectric layer with shallow energy level hole trap, thickness is 1-100nm;Tunneling layer is insulator, thickness range is 1-20nm;Pentacene thickness range is 1-100nm;Source-drain electrode is conductor, thickness range is 50-200nm;Gate electrode is conductor.

The invention relates to the technical field of semiconductors, in particular to a transistor with mechanical sensing and memory functions and a preparation method and application of the transistor. The semiconductor thin film layer is arranged on one side, close to the groove, of the substrate and covers the groove; the ferroelectric thin film layer is arranged on one side, deviating from the groove, of the semiconductor thin film layer and covers right above the groove; and the first electrode and the second electrode are respectively arranged at two ends of the semiconductor film layer and are in contact with the substrate. External force is applied to the ferroelectric film layer arranged right above the groove, so that an equivalent flexoelectric field induced by a strain gradient generated by the ferroelectric film layer under the action of the external force forms a force grid, and ferroelectric polarization of the ferroelectric film can be regulated and controlled through a flexoelectric effect; and due to the non-volatility of ferroelectric polarization in the ferroelectric film layer and the arrangement of the bottom groove, the characteristic of sensing memory response is realized, so that the transistor with the structure has mechanical sensing and memory functions at the same time.

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

A method of manufacturing a stack includes providing an initial stack having a substrate substrate based on a first material and a first insulating layer having an array of walls made of a first insulating material, the array of walls being separated by trenches; filling the trench with a second insulating material, thereby forming a second insulating layer; and forming a semiconductor thin film on the second insulating layer.

Disclosed are a ferroelectric semiconductor thin film, a method of forming the ferroelectric semiconductor thin film, a transistor, a memory device and an integrated circuit. The method of forming the ferroelectric semiconductor thin film includes preparing a precursor solution including an indium precursor and a selenium precursor, and performing spray pyrolysis of the precursor solution on a substrate to obtain the ferroelectric semiconductor thin film including a polycrystalline γ-In2Se3 layer.

The invention discloses an air inlet structure, a reaction device and semiconductor thin film deposition equipment, the air inlet structure comprises a spraying plate, a temperature adjusting part and a control part, the temperature adjusting part is arranged opposite to a spraying area of the spraying plate, and the temperature adjusting part comprises a heating layer, an isolation layer and a feedback layer; the heating layer is arranged on the side, close to the spraying plate, of the isolation layer, the feedback layer is arranged on the side, away from the spraying plate, of the isolation layer, the heating layer comprises a plurality of heating units arranged in an array mode, the feedback layer comprises a plurality of temperature measuring units arranged in an array mode, and the temperature measuring units and the heating units are correspondingly arranged; and the heating layer and the feedback layer are electrically connected with the control part. Each temperature measuring unit can accurately detect the heating temperature of the corresponding heating unit, so that the control part can more accurately control the heating power of the heating units, the uniformity of temperature distribution of the spraying plate is improved, the deposition rates of a thin film in different areas of the surface of a substrate are consistent, and the uniformity of thin film deposition is improved.

The invention discloses a cleaning end point judgment method and a cleaning end point detection system for a thin film growth equipment chamber, and the cleaning end point judgment method comprises the following steps: obtaining the peak concentration C of characteristic gas and the time T when the characteristic gas reaches a peak value; calibrating formal cleaning parameters according to the characteristic gas peak concentration C and the time T; formal cleaning is carried out on the process chamber according to the calibrated parameters; characteristic gas generated by formal cleaning is monitored, and a signal quality factor Q is obtained; setting a standard value G; and comparing the signal quality factor Q with a standard value G, and judging a cleaning result. The cleaning end point detection system comprises a semiconductor film growth equipment process chamber, a tail gas emission pipeline and a detection device, the detection device is arranged on the tail gas emission pipeline to detect the concentration of the characteristic gas in real time. The problems that an existing cleaning method cannot quantify the pollution load before cleaning, and the self-adaptive anti-interference capability is lacked in the cleaning process can be solved.

[Problem] To provide an oxide semiconductor thin film capable of realizing a thin film transistor having a high-mobility active layer, a thin film semiconductor device using the oxide semiconductor thin film, and a method for manufacturing the thin film semiconductor device, and to provide a sputtering target that can be used to form the oxide semiconductor thin film, and a method for manufacturing the sputtering target. [Solution] The present invention provides an oxide semiconductor thin film comprising an amorphous oxide semiconductor mainly composed of an In-Ga-Ge-Zn-O oxide containing indium, gallium, germanium, and zinc, in which 70 < = In < = 90 at%, 0 < Ga < = 10 at%, 0 < Ge < = 10 at%, and 5 < = Zn < = 30 at%.

The invention relates to a gas concentration detection device for detecting binary gas concentration. The gas concentration detection device comprises a detection module, a sealing sleeve module and a controller module, the detection module comprises a detection cavity, a forming cavity integrally formed with the detection cavity, and a transducer sealed in the forming cavity by using a sealant. The sealing sleeve module has a sleeve container shape matching the shape of the detection module to accommodate and seal the detection chamber of the detection module, and includes an air inlet and an air outlet in fluid communication with the detection chamber. The controller module comprises an electric appliance module with a communication board, a power board and a main control board, a display module with a display screen and a driving board. The detection module, the sealing sleeve module and the controller module are modular assemblies, and the detection module and the sealing sleeve module as well as the detection module and the controller module are matched with each other and are detachably connected with each other. The gas concentration detection device for detecting the binary gas concentration is suitable for gas concentration detection of a gas supply system of a semiconductor thin film process.

The invention discloses an online thickness measurement system for semiconductor film deposition, and relates to the technical field of thickness measurement devices. The device comprises a main body structure which comprises a bottom plate, an adjusting plate located above the bottom plate and a supporting plate located above the adjusting plate; an automatic detection structure, comprising a stroke frame on the outer side of a supporting plate, a first motor located on one side of the upper end of a bottom plate, a first screw located at the output end of the first motor, a first nut, a second motor located at one end of the stroke frame and a second screw located at the output end of the second motor and rotationally installed in the stroke frame, wherein the first nut is connected to the outer wall of the first screw in a threaded and sleeving mode; the outer wall of the second screw is sleeved with the second nut in a threaded mode, and the stroke frame is located at the lower end of the second nut. By arranging the negative pressure adsorption fixing structure, the multi-dimensional mobile automatic detection mechanism and the adjustable clamping plate, the problems of low precision and poor efficiency of manual detection of the deposition thickness of the semiconductor film are solved, and automatic and accurate measurement is realized.

The invention discloses a semiconductor film material suitable for the field of intelligent energy conservation and a preparation method thereof. According to the TiO2 / WxV1-xO2 / ZrO2 multilayer film system provided by the invention, the phase transition temperature of the WxV1-xO2 functional layer film is adjusted by doping VO2 with W < 6 + > ions, the crystallization quality of the WxV1-xO2 functional layer film is improved by adopting TiO2 as a seed layer, and the optical performance of the multilayer film is regulated and controlled by adopting ZrO2 as an anti-reflection layer. The multi-layer thin film system provided by the invention has a metal-semiconductor conversion characteristic, the phase change temperature can be as low as 37 DEG C, the light modulation capability in a wavelength range of 300-2500nm can reach 11.9%, and meanwhile, the visible light transmittance at room temperature can be kept at 40% or above. In addition, the multilayer film system has the advantages of being easy to prepare, low in manufacturing cost, high in environmental stability and suitable for large-scale production.

The invention provides a sputtering target for forming an oxide semiconductor thin film and a method for manufacturing the same, an oxide semiconductor thin film, and a thin film semiconductor device and a method for manufacturing the same. The sputtering target for forming the oxide semiconductor thin film can form an oxide semiconductor thin film suitable for realizing an active layer with high mobility and high band gap at the same time. Provided is a sputtering target for forming an oxide semiconductor thin film, the sputtering target being used for forming an oxide semiconductor thin film, the sputtering target comprising an oxide sintered body containing a predetermined oxide, and when the element ratio of the predetermined oxide is InXSnYGewZnZ, X is 0.245-0.5, Y is 0.1-0.3, Z is 0.2-0.655, and X + Y + Z is in the range of X + Y + Z = 1, and W / (W + X + Y + Z) is 0.01-0.03 (inclusive).

Provided are a semiconductor thin film and a semiconductor device including the same. The semiconductor device includes an oxide semiconductor layer having an amorphous phase and including tin (Sn) and a metal element other than tin (Sn), wherein a content of tin (Sn) is greater than 50 at % of a total content of tin (Sn) and the metal element other than tin (Sn), a first electrode and a second electrode disposed on the oxide semiconductor layer and spaced apart from each other, a gate electrode spaced apart from the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode.